CN103975444A - 太阳能电池和太阳能电池的制造方法 - Google Patents

太阳能电池和太阳能电池的制造方法 Download PDF

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CN103975444A
CN103975444A CN201280059996.2A CN201280059996A CN103975444A CN 103975444 A CN103975444 A CN 103975444A CN 201280059996 A CN201280059996 A CN 201280059996A CN 103975444 A CN103975444 A CN 103975444A
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solar cell
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椎野修
冲野贤司
吉川雅人
宫野真理
中村智
山本由纪子
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Abstract

该太阳能电池(1)由第一电极层(1C)、半导体层(1A)和第二电极层(1D)层叠而构成。第一电极层(1C)设置在半导体层(1A)的光入射面侧。第一电极层(1C)和半导体层(1A)经肖特基接合界面接合。第二电极层(1D)设置在半导体层(1A)的光入射面的对侧上。第二电极层(1D)和半导体层(1A)经欧姆接触接合。第一电极层(1C)包含可见光吸收材料。

Description

太阳能电池和太阳能电池的制造方法
技术领域
本发明涉及太阳能电池及其制造方法。
背景技术
肖特基太阳能电池结构迄今为止是已知的(专利文献1和非专利文献1)。
例如，已知图3所示的肖特基太阳能电池10的结构。具体地，如图3所示，太阳能电池10通过将半导体层10A、表面电极层10B、第一电极层10C、第二电极层10D和背面电极层10E层叠而形成。
在图3所示的实例中，半导体层10A由1-mmt-厚ZnO基板(沿(0001)方向)形成，表面电极10B由厚度100nm的Au形成。
另外，第一电极层10C由100-nm-厚的PEDOT-PSS(导电性高分子，H.C.Starck GmbH制)形成。
第二电极层10D为欧姆接触用金属电极层，其由厚度40nm的Ti形成。背面电极层10E由厚度100nm的Au形成。
应注意的是，第一电极层10C和半导体层10A通过肖特基接合界面接合在一起，第二电极层10D和半导体层10A通过欧姆接触接合在一起。
太阳能电池10以下述方法形成：一旦入射光经表面电极层10B和第一电极层10C击中半导体层10A，半导体层10A中的价带中的电子跃迁至的导带，从而形成光载流子(电子和空穴)；由于在接近肖特基接合界面的半导体层10A中存在的内置电位差(扩散电位差)而发生光载流子分离；从而发生光伏效应。
应注意的是，当入射光的光能小于半导体层10A中导带与价带之间的带隙时，不发生此类光伏效应，因为：在半导体层10A中，价带中的电子不能跃迁至导带；并且半导体层10A因此不能吸收入射光。
[引用列表]
[专利文献]
[专利文献1]日本专利申请公布2010-219399号
[非专利文献]
[非专利文献1]APPLIED PHYSICS LETTERS93,12309(2008)
发明内容
在此，在图3所示的肖特基太阳能电子10的结构中，可见光的光能小于由ZnO基板形成的半导体层10A中导带与价带之间的带隙。由于该原因，当可见光入射时不发生光伏效应。
结果，在包含大量可见光的日光下图3所示的肖特基太阳能电子10具有发电效率差的问题。
本发明是考虑到前述问题而进行的。本发明的目的为提供肖特基太阳能电池及其制造方法，其中在包含大量可见光的日光下肖特基太阳能电池具有良好的发电效率。
本发明的第一特征总结为太阳能电池由第一电极层、半导体层和第二电极层层叠而构成，其中，第一电极层设置于半导体层的光照射面侧，第一电极层和半导体层通过肖特基接合界面接合在一起，第二电极层设置于半导体层的光照射面的对侧上，第二电极层和半导体层通过欧姆接触接合在一起，第一电极层包含可见光吸收材料。
附图说明
图1为示出本发明第一实施方案的太阳能电池的结构的图。
图2为示出本发明第一实施方案的太阳能电池的制造方法实例的流程图。
图3为示出常规技术的太阳能电池的结构的图。
具体实施方式
(本发明的第1实施方案)
参考图1，将提供对本发明第一实施方案的太阳能电池1以及太阳能电池1的制造方法的描述。
具体地，如图1所示，该实施方案的太阳能电池10通过层叠半导体层1A、表面电极层1B、第一电极层1C/1F、第二电极层1D和背面电极层1E形成。
半导体层1A例如由1-mmt-厚ZnO基板(沿(0001)方向)形成。
表面电极1B例如由厚度100nm的Au形成。背面电极层1E例如由厚度100nm的Au形成。
第二电极层1D为欧姆接触用金属电极层，其例如由厚度40nm的Ti形成。具体来说，第二电极层1D设置于半导体层10A的光照射面的对侧上，并与半导体层1A通过欧姆接触形成。
第一电极层1C/1F设置于半导体层10A的光照射面侧，并在第一电极层1C/1F与半导体层10A之间形成有肖特基势垒。
例如，第一电极层1C/1F包括100-nm-厚PEDOT-PSS(导电性高分子，H.C.Starck GmbH制)层1C和40-nm-厚PEDOT-PSS(导电性高分子，H.C.StarckGmbH制)层1F。
此处，形成层1F以包含可见光吸收材料。例如，形成层1F以包含硅微粒(纳米硅)作为可见光吸收材料。
应注意的是，硅微粒具有下述特征："导带与价带之间的带隙根据硅微粒的粒径变化。"例如，当粒径为"5nm"时，带隙为"2.0eV"。当粒径为"3nm"时，带隙为"2.5eV"。
因此，可吸收至层1中的入射光的波长(光能)范围可通过改变作为要包含在层1中的可见光吸收材料的硅微粒的粒径来调节。
太阳能电池10以下述方法形成：一旦入射光经表面电极层10B和第一电极层10C击中半导体层10A，在半导体层10A中价带中的电子跃迁至导带，从而形成光载流子(电子和空穴(hole))；由于在接近肖特基接合界面的半导体层10A中存在的内置电位差(扩散电位差)而发生光载流子分离；从而发生光伏效应。
同样地，太阳能电池1以下述方法形成：一旦入射光经表面电极层10B和第一电极层10C击中层1C中的硅微粒，在硅微粒中价带中的电子跃迁至导带，从而形成光载流子(电子和空穴)；由于在接近肖特基接合界面的半导体层10A中存在的内置电位差(扩散电位差)而发生光载流子分离；从而发生光伏效应。
此处，期望硅微粒经受终止处理(termination treatment)。在该构成中，终止处理很大程度上改善硅微粒在PEDOT-PSS溶液中的溶解度，并因而使得可形成高均一性的含硅微粒的PEDOT-PSS层1F。此外，在该构成中，终止处理很大程度上增加大气中的稳定性，并因而使得可延长实施方案的太阳能电池1的寿命。
参考图2，下文将提供太阳能电池1的制造方法的实例的描述。
如图2所示，构成半导体层1A的半导体基板在步骤S101中清洗。
例如，用乙醇对由Tokyo Denpa Co.,Ltd.制造的沿(0001)方向的ZnO基板(氧化锌单晶基板)进行超声清洗10分钟，然后用丙酮进行超声清洗10分钟。随后，使用UV臭氧清洗器使ZnO基板进行清洗过程10分钟。
在步骤S102中，将包含可见光吸收材料的第一导电性高分子施涂至ZnO基板。
例如，通过以质量百分率30:70的比例混合PEDOT-PSS(由H.C.StarckGmbH制的导电性高分子)和癸烯-终止纳米硅的甲苯溶液来制备溶液。将该溶液通过旋涂法施涂至前述ZnO基板。
在步骤S103中，将第二导电性高分子施涂至步骤S102中施涂的第一导电性高分子的光照射面侧。
例如，通过旋涂法将PEDOT-PS(由H.C.Starck GmbH制的导电性高分子)施涂至在步骤S102中施涂的溶液的光照射面侧。这里，旋涂条件设定为5000rpm/30秒。
在步骤S104中，在步骤S103完成后紧接着在大气中进行烘焙处理。此处，将温度曲线设定为例如一系列的温度：50℃(10分钟)、80℃(10分钟)、150℃(10分钟)、190℃(10分钟)的顺序，然后缓慢冷却至常温。
在步骤S105中，第二电极层1D和背面电极层1E形成于半导体层(ZnO基板)的光照射面的对侧上。例如，通过溅射形成第二电极层1D和背面电极层1E。
在步骤S106中，表面电极层1B形成于步骤S103中施涂的第二导电性高分子的光照射面侧。
例如，在完成步骤S105后，将ZnO基板从大气中取出。随后，已冲压有圆形图案的直径为0.2mm的金属掩膜附着到在步骤S103中施涂的PEDOT-PSS上，表面电极层1B通过溅射形成与金属掩膜上。
其后，除去金属掩膜，使用镊子机械除去表面电极层1B周边约0.3mm边的PEDOT-PSS。
由于包含可见光吸收材料的第一导电性高分子(例如，含有纳米硅的PEDOT-PSS)对于可见光不是透明的，所以本发明第一实施方案的太阳能电池1能够使用可见光获得光伏电力，并在包含大量可见光的日光下能够增强发电效果。
(实验例)
接下来，为了使得本发明的效果更明确，在分别用具有红色波长(660nm)、绿色波长(525nm)、蓝色波长(470nm)和紫外线波长(365nm)的LED灯照射的情况下，测量比较例1的太阳能电池10的光伏电力和实施例1的太阳能电池1的光伏电力。
应注意的是，用于实施例1的太阳能电池1具有图1所示结构，并通过图2所示制造方法制造。同时，常规例1的太阳能电池10具有图3所示结构，并且除了步骤S102中的处理以外，通过图2所示制造方法制造。
这里，表1示出从实验获得的光伏电力。
[表1]
黑暗状态 红 绿 蓝 紫外线
比较例1 0.00V 0.00V 0.00V 0.02V 0.45V
实施例1 0.00V 0.01V 0.05V 0.20V 0.35V
如表1所示可知，使用包含可见光吸收材料的导电性高分子的实施例1的太阳能电池1能够从可见光获得光伏电力。
上文中，已通过使用前述实施方案详细描述了本发明。然而，对于本领域技术人员显而易见的是，本发明不应受限于说明书中记载的实施方案。本发明可在不偏离本发明的精神和范围下以更改或修改的实施方案的形式实施，本发明的精神和范围由权利要求的记载范围确定。因此，说明书中的记载仅意欲用于示例性解释，并不对本发明施以任何限制性解释。
注意，将日本专利申请2011-268787号(2011年12月8日提交)的全部内容引入本说明书中以作参考。
产业上的可利用性
如上所述，本发明的太阳能电池及其制造方法，由于其能够利用包括大量可见光的日光来增强发电效率，因而是有用的。

Claims (5)

1.一种太阳能电池，其由第一电极层、半导体层和第二电极层层叠而构成，其中，
所述第一电极层设置在所述半导体层的光照射面侧上，
所述第一电极层和所述半导体层通过肖特基接合界面接合在一起，
所述第二电极层设置在所述半导体层的光照射面的对侧上，
所述第二电极层和所述半导体层通过欧姆接触接合在一起，和
所述第一电极层包含可见光吸收材料。
2.根据权利要求1所述的太阳能电池，其中所述可见光吸收材料为硅微粒。
3.根据权利要求2所述的太阳能电池，其中所述硅微粒经受终止处理。
4.根据权利要求1所述的太阳能电池，其中所述第一电极层由导电性高分子形成。
5.一种太阳能电池的制造方法，其包括下述步骤：
将包括可见光吸收材料的第一导电性高分子施涂至半导体层的光照射面侧；
将第二导电性高分子施涂至所述第一导电性高分子的光照射面侧；和
在所述半导体层的光照射面的对侧上形成电极层。
CN201280059996.2A 2011-12-08 2012-12-05 太阳能电池和太阳能电池的制造方法 Pending CN103975444A (zh)

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