CN103975092A - 在工件处理期间的电荷中和化的装置及其方法 - Google Patents

在工件处理期间的电荷中和化的装置及其方法 Download PDF

Info

Publication number
CN103975092A
CN103975092A CN201280060457.0A CN201280060457A CN103975092A CN 103975092 A CN103975092 A CN 103975092A CN 201280060457 A CN201280060457 A CN 201280060457A CN 103975092 A CN103975092 A CN 103975092A
Authority
CN
China
Prior art keywords
voltage
plasma source
low
voltage state
workpiece holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201280060457.0A
Other languages
English (en)
Chinese (zh)
Inventor
彼得·F·库鲁尼西
克里斯多夫·J·里维特
丹尼尔·迪斯塔苏
提摩太·J·米勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN103975092A publication Critical patent/CN103975092A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/14—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using charge exchange devices, e.g. for neutralising or changing the sign of the electrical charges of beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
CN201280060457.0A 2011-12-07 2012-11-19 在工件处理期间的电荷中和化的装置及其方法 Pending CN103975092A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/313,078 US8461554B1 (en) 2011-12-07 2011-12-07 Apparatus and method for charge neutralization during processing of a workpiece
US13/313,078 2011-12-07
PCT/US2012/065813 WO2013085705A1 (en) 2011-12-07 2012-11-19 Apparatus and method for charge neutralization during processing of a workpiece

Publications (1)

Publication Number Publication Date
CN103975092A true CN103975092A (zh) 2014-08-06

Family

ID=47326373

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280060457.0A Pending CN103975092A (zh) 2011-12-07 2012-11-19 在工件处理期间的电荷中和化的装置及其方法

Country Status (6)

Country Link
US (1) US8461554B1 (https=)
JP (1) JP2015507688A (https=)
KR (1) KR20140108258A (https=)
CN (1) CN103975092A (https=)
TW (1) TW201324573A (https=)
WO (1) WO2013085705A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475611A (zh) * 2015-12-21 2018-08-31 瓦里安半导体设备公司 控制等离子体源的离子/中性物比的技术
CN112470248A (zh) * 2018-07-25 2021-03-09 朗姆研究公司 维护模式电源系统

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8541757B1 (en) * 2012-08-14 2013-09-24 Transmute, Inc. Accelerator on a chip having a cold ion source
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9017526B2 (en) * 2013-07-08 2015-04-28 Lam Research Corporation Ion beam etching system
JP6305703B2 (ja) * 2013-08-07 2018-04-04 東芝メモリ株式会社 画像取得装置、画像取得方法及び欠陥検査装置
US9460961B2 (en) * 2014-08-05 2016-10-04 Varian Semiconductor Equipment Associates, Inc. Techniques and apparatus for anisotropic metal etching
KR20160022458A (ko) 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
FR3045206B1 (fr) 2015-12-10 2020-01-03 Ion Beam Services Procede de commande pour un implanteur fonctionnant en immersion plasma
WO2024129472A1 (en) * 2022-12-16 2024-06-20 Lam Research Corporation Method and apparatus to bias an electrostatic chuck

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002025694A2 (en) * 2000-09-18 2002-03-28 Axcelis Technologies, Inc. System and method for controlling sputtering and deposition effects in a plasma immersion implantation device
US20100213162A1 (en) * 2009-02-20 2010-08-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
WO2010115110A2 (en) * 2009-04-03 2010-10-07 Varian Semiconductor Equipment Associates Plasma processing apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1080482B1 (en) * 1998-05-22 2002-10-16 Varian Semiconductor Equipment Associates Inc. Method and apparatus for low energy ion implantation
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US7767986B2 (en) * 2008-06-20 2010-08-03 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling beam current uniformity in an ion implanter
US8603591B2 (en) * 2009-04-03 2013-12-10 Varian Semiconductor Ewuipment Associates, Inc. Enhanced etch and deposition profile control using plasma sheath engineering
US20110143527A1 (en) * 2009-12-14 2011-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for generating uniform ion beam
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002025694A2 (en) * 2000-09-18 2002-03-28 Axcelis Technologies, Inc. System and method for controlling sputtering and deposition effects in a plasma immersion implantation device
US20100213162A1 (en) * 2009-02-20 2010-08-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium
WO2010115110A2 (en) * 2009-04-03 2010-10-07 Varian Semiconductor Equipment Associates Plasma processing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108475611A (zh) * 2015-12-21 2018-08-31 瓦里安半导体设备公司 控制等离子体源的离子/中性物比的技术
CN108475611B (zh) * 2015-12-21 2020-10-27 瓦里安半导体设备公司 用于增大反应离子与中性物质的比的方法
CN112470248A (zh) * 2018-07-25 2021-03-09 朗姆研究公司 维护模式电源系统
CN112470248B (zh) * 2018-07-25 2024-08-27 朗姆研究公司 维护模式电源系统

Also Published As

Publication number Publication date
WO2013085705A1 (en) 2013-06-13
KR20140108258A (ko) 2014-09-05
TW201324573A (zh) 2013-06-16
US8461554B1 (en) 2013-06-11
US20130146790A1 (en) 2013-06-13
JP2015507688A (ja) 2015-03-12

Similar Documents

Publication Publication Date Title
CN103975092A (zh) 在工件处理期间的电荷中和化的装置及其方法
Qian et al. Analysis of polarity effects in the electrical breakdown of liquids
JP6391261B2 (ja) Ｄｃパルスエッチング装置
CN103493172B (zh) 无罩幕图案化植入的方法
US20170178866A1 (en) Apparatus and techniques for time modulated extraction of an ion beam
US9691584B1 (en) Ion source for enhanced ionization
CN113508449B (zh) 间接加热式阴极离子源及操作其的方法
CN109417012A (zh) 用于电荷中和离子束的射频提取系统
TW201442077A (zh) 用於處理基底的系統與方法
KR20110097193A (ko) 원자층 식각 장치
KR101298166B1 (ko) 전원 장치
KR930017662A (ko) 넒은 비임 선속밀도 제어장치 및 방법
Sun et al. Effects of surface “micro-holes” on the flashover properties of a disk-type ceramic-vacuum insulator
US20140199492A1 (en) Ion implanter and method of operating ion implanter
JPWO2005117059A1 (ja) 電荷中和装置
WO2011130014A2 (en) Pulsed plasma to affect conformal processing
CN101542677B (zh) 用于基底预处理的装置
KR100948951B1 (ko) 확장형 파워전극을 구비한 대기압 플라즈마 발생장치
US10278276B2 (en) Short pulse neutron generator
KR101081350B1 (ko) 플라즈마 도핑장치
KR20100121991A (ko) 플라즈마 도핑장치 및 도핑방법
KR101081352B1 (ko) 플라즈마 도핑장치 및 방법
Kai et al. Analysis on the Influence Factors and Research Status of Non-contact Electrostatic Discharge
Jiang et al. Study on the Interaction and Evolution of Surface Dielectric Barrier Discharge Channels
CN118471776A (zh) 一种离子注入机中的晶圆表面电荷效应抑制装置和方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140806