CN103972330B - A kind of preparation method of CdS quantum dot photoelectric detection unit - Google Patents
A kind of preparation method of CdS quantum dot photoelectric detection unit Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 65
- 238000001514 detection method Methods 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000010521 absorption reaction Methods 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 40
- 239000008367 deionised water Substances 0.000 claims description 30
- 229910021641 deionized water Inorganic materials 0.000 claims description 30
- 239000002243 precursor Substances 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 20
- 150000001450 anions Chemical class 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 10
- 238000001179 sorption measurement Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 6
- 230000001351 cycling effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 27
- 239000002086 nanomaterial Substances 0.000 abstract description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 64
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 64
- 239000000523 sample Substances 0.000 description 53
- 238000007747 plating Methods 0.000 description 16
- 150000001768 cations Chemical class 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000011160 research Methods 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
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- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 230000005693 optoelectronics Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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Abstract
The present invention relates to a kind of preparation method building photoelectric detection unit based on nano material, specifically refer to a kind of preparation method of CdS quantum dot photoelectric detection unit.The present invention is by micro-nano process technology, first prepare Au electrode at silicon (Si) substrate surface, then continuous ionic layer absorption method (SILAR) is adopted, between electrode, grow CdS quantum dot under room temperature, finally photoelectric properties test is carried out to the CdS quantum dot photoelectric detection unit built.Advantage of the present invention is: process controllability is strong, and simple to operate, universality is good.
Description
Technical field
The present invention relates to a kind of preparation method building photoelectric detection unit based on nano material, specifically refer to a kind of preparation method of CdS quantum dot photoelectric detection unit.
Technical background
CdS is a kind of direct gap semiconductor (bandwidth 2.4eV), has been widely used in the preparation of various photoelectric device.And CdS quantum dot due to size little, the physical characteristics such as specific surface is large, and quantum size effect is remarkable, and this makes the light of nanometer system, heat, electricity are different with the material of routine, occur many new kink characteristics.Research shows, CdS quantum dot is at solar cell, and nano laser and nanometer photocon field are with a wide range of applications.At present, domestic and international many seminars oneself through in the research work carrying out nano-tube/CdS photoelectric detection unit, the research of this respect is mainly divided into two kinds: a kind of is research based on CdS nanowire photodiode probe unit; A kind of is research based on nano CdS (Cadmium Sulfide) film photoelectric detection unit.Research based on CdS nano wire has had more report, and this method prepares photoelectric detection unit device more complicated, and the photoelectric current recorded is general not high.CdS film photoelectric detection unit preparation technology is simple, but in device performance stability, processing technology repeatability is poor, and most devices is after repetitive measurement, and photoelectric response characteristic is degenerated and even disappeared, and needs the stability of further reinforcing property.Compared with above-mentioned two kinds of nano-tube/CdS photoelectric detection unit, it is low that CdS quantum dot photoelectric detection unit not only has cost, preparation technology is simple, the series of advantages such as restorability, and can by the electricity of the testing research CdS quantum dot of photoelectric detection unit and optical delivery mechanism, this is to research and development Novel Optoelectronic Device is significant further.
Summary of the invention
The object of this invention is to provide a kind of controllability strong, the technique of the preparation CdS quantum dot photoelectric detection unit that efficiency is high, universality is good.
The method preparing CdS quantum dot photoelectric detection unit of the present invention, adopt micro-nano process technology, step is as follows:
1) silicon substrate preliminary treatment: to being coated with SiO
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 5 ~ 20 minutes, and dries naturally.
2) preparation of device electrode: adopt ultraviolet photolithographic technology and film deposition techniques at the source electrode of surface of silicon fabricate devices and drain electrode, source, drain electrode adopt Au as electrode material, electrode gap is 20 microns, and Au thickness of electrode is 70 ~ 100 nanometers.
3) between source, drain electrode, CdS quantum dot is grown: adopt continuous ionic layer absorption method (SILAR), between electrode, grow CdS quantum dot under room temperature, cycling deposition number of times is 5 ~ 10 times.
4) to build CdS quantum dot photoelectric detection unit carry out photoelectric properties test: draw copper cash to source, drain electrode, and by source ground, making alive 0.5 ~ 3 volt between source, drain electrode, V-I test is carried out under respectively device being placed in dark state, visible ray and 365 nm W, find that its illumination electric current and dark current difference are comparatively large, indicate this CdS quantum dot photoelectric detection unit and there is higher photoelectric sensitivity and responsiveness.
As preferably, in above-mentioned preparation method's step (1), use acetone ultrasonic cleaning silicon substrate 15 minutes
As preferably, in above-mentioned preparation method's step (2), Au thickness of electrode is 80 nanometers.
As preferably, in above-mentioned preparation method's step (3), cycling deposition number of times is 6 times.
As preferably, in above-mentioned preparation method's step (4), between source, drain electrode, making alive 1.5 volts of effects are best.
As preferably, in the step (3) of above-mentioned preparation method continuous ionic layer absorption method in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.
Beneficial effect: in preparation process of the present invention, agents useful for same is commercial product, without the need to loaded down with trivial details preparation; In preparation process of the present invention, prepared CdS quantum dot has excellent fluorescent characteristic; The present invention adopts micro-nano process technology to prepare CdS quantum dot photoelectric detection unit, and process controllability is strong, simple to operate, and retest has restorability.
Accompanying drawing explanation
Fig. 1 is with obtained Au electrode ESEM (SEM) photo of the inventive method.
Fig. 2 is X-ray diffraction (XRD) spectrogram of the CdS quantum dot obtained by the inventive method.
Fig. 3 is the fluorescence spectrum figure of the CdS quantum dot obtained by the inventive method.
Fig. 4 is with the obtained CdS quantum dot ultraviolet detection unit component schematic diagram of the inventive method.
Fig. 5 be 1.5V with the source-drain voltage that the inventive method records and different light time CdS quantum dot photoelectric detection unit V-I curve chart.
Embodiment
The present invention is further illustrated below in conjunction with example.
Embodiment 1
First SiO will be coated with
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 15 minutes, and dries naturally.Then at surface of silicon spin coating negative photoresist, through uv-exposure, after dry, developing and fixing process forms electrode pattern in surface of silicon, wherein the time for exposure is 15 seconds, and developing time is 40 seconds.Utilize magnetic control sputtering device by the silicon base of existing electrode pattern plating Au afterwards, time is 8 minutes, thickness is 80 nanometers, by the sample acetone ultrasonic cleaning of plating Au, namely the Au electrode needed for following experiment is obtained, as source electrode and the drain electrode of photoelectric detection unit, can see that electrode spacing is 25 microns by Au electrode ESEM (SEM) photo in Fig. 1.Next before growth CdS quantum dot, Au electrode is carried out preliminary treatment, electrode is made only to expose mid portion, then adopt continuous ionic layer absorption method (SILAR) in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.These four step cycle are carried out 6 times, obtains CdS quantum dot, find out that CdS quantum dot is zincblende lattce structure by X-ray diffraction (XRD) spectrogram of Fig. 2 CdS quantum dot, find out that CdS quantum dot fluorescence is good from the fluorescence spectrum figure of Fig. 3 CdS quantum dot.Finally test after sample dries naturally, namely at source electrode and drain electrode two ends making alive 1.5V, during dark state, the V-I characteristic curve of CdS quantum dot photoelectric detection unit as shown in Figure 4.Carry out V-I test under device being placed in visible ray and 365 nm W, find out that the illumination electric current of CdS quantum dot and dark current difference are comparatively large by Fig. 5, there is higher photoelectric sensitivity and responsiveness.
Embodiment 2
First SiO will be coated with
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 10 minutes, and dries naturally.Then at surface of silicon spin coating negative photoresist, through uv-exposure, after dry, developing and fixing process forms electrode pattern in surface of silicon, wherein the time for exposure is 15 seconds, and developing time is 40 seconds.Utilize magnetic control sputtering device by the silicon base of existing electrode pattern plating Au afterwards, the time is 8 minutes, and thickness is 80 nanometers, by the sample acetone ultrasonic cleaning of plating Au, namely obtains the Au electrode needed for following experiment, as source electrode and the drain electrode of photoelectric detection unit.Next before growth CdS quantum dot, Au electrode is carried out preliminary treatment, electrode is made only to expose mid portion, then adopt continuous ionic layer absorption method (SILAR) in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.These four step cycle are carried out 6 times, obtains CdS quantum dot.Finally test after sample dries naturally, namely at source electrode and drain electrode two ends making alive 1.5V, device carries out V-I test under being placed in visible ray and 365 nm W.The structure of CdS quantum dot, composition is all identical with embodiment 1 with the test result of fluorescence and photoelectric detection unit.
Embodiment 3
First SiO will be coated with
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 15 minutes, and dries naturally.Then at surface of silicon spin coating negative photoresist, through uv-exposure, after dry, developing and fixing process forms electrode pattern in surface of silicon, wherein the time for exposure is 20 seconds, and developing time is 40 seconds.Utilize magnetic control sputtering device by the silicon base of existing electrode pattern plating Au afterwards, the time is 8 minutes, and thickness is 80 nanometers, by the sample acetone ultrasonic cleaning of plating Au, namely obtains the Au electrode needed for following experiment, as source electrode and the drain electrode of photoelectric detection unit.Next before growth CdS quantum dot, Au electrode is carried out preliminary treatment, electrode is made only to expose mid portion, then adopt continuous ionic layer absorption method (SILAR) in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.These four step cycle are carried out 6 times, obtains CdS quantum dot.Finally test after sample dries naturally, namely at source electrode and drain electrode two ends making alive 1.5V, under device being placed in visible ray and 365 nm W, carry out V-I test.The structure of CdS quantum dot, composition is all identical with embodiment 1 with the test result of fluorescence and photoelectric detection unit.
Embodiment 4
First SiO will be coated with
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 15 minutes, and dries naturally.Then at surface of silicon spin coating negative photoresist, through uv-exposure, after dry, developing and fixing process forms electrode pattern in surface of silicon, wherein the time for exposure is 15 seconds, and developing time is 40 seconds.Utilize magnetic control sputtering device by the silicon base of existing electrode pattern plating Au afterwards, the time is 9 minutes, and thickness is 90 nanometers, by the sample acetone ultrasonic cleaning of plating Au, namely obtains the Au electrode needed for following experiment, as source electrode and the drain electrode of photoelectric detection unit.Next before growth CdS quantum dot, Au electrode is carried out preliminary treatment, electrode is made only to expose mid portion, then adopt continuous ionic layer absorption method (SILAR) in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.These four step cycle are carried out 6 times, obtains CdS quantum dot.Finally test after sample dries naturally, namely at source electrode and drain electrode two ends making alive 1.5V, under device being placed in visible ray and 365 nm W, carry out V-I test.The structure of CdS quantum dot, the test result of composition and fluorescence and photoelectric detection unit is all similar to Example 1.
Embodiment 5
First SiO will be coated with
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 15 minutes, and dries naturally.Then at surface of silicon spin coating negative photoresist, through uv-exposure, after dry, developing and fixing process forms electrode pattern in surface of silicon, wherein the time for exposure is 20 seconds, and developing time is 40 seconds.Utilize magnetic control sputtering device by the silicon base of existing electrode pattern plating Au afterwards, the time is 8 minutes, and thickness is 80 nanometers, by the sample acetone ultrasonic cleaning of plating Au, namely obtains the Au electrode needed for following experiment, as source electrode and the drain electrode of photoelectric detection unit.Next before growth CdS quantum dot, Au electrode is carried out preliminary treatment, electrode is made only to expose mid portion, then adopt continuous ionic layer absorption method (SILAR) in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.These four step cycle are carried out 7 times, obtains CdS quantum dot.Finally test after sample dries naturally, namely at source electrode and drain electrode two ends making alive 1.5V, under device being placed in visible ray and 365 nm W, carry out V-I test.The structure of CdS quantum dot, the test result of composition and fluorescence and photoelectric detection unit all has similarity with embodiment 1
Embodiment 6
First SiO will be coated with
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 15 minutes, and dries naturally.Then at surface of silicon spin coating negative photoresist, through uv-exposure, after dry, developing and fixing process forms electrode pattern in surface of silicon, wherein the time for exposure is 15 seconds, and developing time is 40 seconds.Utilize magnetic control sputtering device by the silicon base of existing electrode pattern plating Au afterwards, the time is 8 minutes, and thickness is 80 nanometers, by the sample acetone ultrasonic cleaning of plating Au, namely obtains the Au electrode needed for following experiment, as source electrode and the drain electrode of photoelectric detection unit.Next before growth CdS quantum dot, Au electrode is carried out preliminary treatment, electrode is made only to expose mid portion, then adopt continuous ionic layer absorption method (SILAR) in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.These four step cycle are carried out 8 times, obtains CdS quantum dot.Finally test after sample dries naturally, namely at source electrode and drain electrode two ends making alive 1.5V, under device being placed in visible ray and 365 nm W, carry out V-I test.The structure of CdS quantum dot, composition is all identical with embodiment 1 with the test result of fluorescence and photoelectric detection unit.
Embodiment 7
First SiO will be coated with
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 15 minutes, and dries naturally.Then at surface of silicon spin coating negative photoresist, through uv-exposure, after dry, developing and fixing process forms electrode pattern in surface of silicon, wherein the time for exposure is 15 seconds, and developing time is 40 seconds.Utilize magnetic control sputtering device by the silicon base of existing electrode pattern plating Au afterwards, the time is 8 minutes, and thickness is 80 nanometers, by the sample acetone ultrasonic cleaning of plating Au, namely obtains the Au electrode needed for following experiment, as source electrode and the drain electrode of photoelectric detection unit.Next before growth CdS quantum dot, Au electrode is carried out preliminary treatment, electrode is made only to expose mid portion, then adopt continuous ionic layer absorption method (SILAR) in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.These four step cycle are carried out 6 times, obtains CdS quantum dot.Finally test after sample dries naturally, namely at source electrode and drain electrode two ends making alive 2.5V, under device being placed in visible ray and 365 nm W, carry out V-I test.The structure of CdS quantum dot, the test result of composition and fluorescence and photoelectric detection unit all has similarity with embodiment 1
Embodiment 8
First SiO will be coated with
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 15 minutes, and dries naturally.Then at surface of silicon spin coating negative photoresist, through uv-exposure, after dry, developing and fixing process forms electrode pattern in surface of silicon, wherein the time for exposure is 15 seconds, and developing time is 40 seconds.Utilize magnetic control sputtering device by the silicon base of existing electrode pattern plating Au afterwards, the time is 8 minutes, and thickness is 80 nanometers, by the sample acetone ultrasonic cleaning of plating Au, namely obtains the Au electrode needed for following experiment, as source electrode and the drain electrode of photoelectric detection unit.Next before growth CdS quantum dot, Au electrode is carried out preliminary treatment, electrode is made only to expose mid portion, then adopt continuous ionic layer absorption method (SILAR) in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2(cation presoma) and Na
2s (anion presoma) precursor solution, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.These four step cycle are carried out 6 times, obtains CdS quantum dot.Finally test after sample dries naturally, namely at source electrode and drain electrode two ends making alive 1V, under device being placed in visible ray and 365 nm W, carry out V-I test.The structure of CdS quantum dot, composition is all identical with embodiment 1 with the test result of fluorescence and photoelectric detection unit.
Claims (5)
1. a preparation method for CdS quantum dot photoelectric detection unit, is characterized in that comprising the steps:
1) silicon substrate preliminary treatment: to being coated with SiO
2p type (100) silicon chip of insulation film, with acetone, ethanol and deionized water difference ultrasonic cleaning 5 ~ 20 minutes, and dries naturally;
2) preparation of device electrode: adopt ultraviolet photolithographic technology and film deposition techniques at the source electrode of surface of silicon fabricate devices and drain electrode, source electrode, drain electrode adopt Au as electrode material, electrode gap is 20 microns, and Au thickness of electrode is 70 ~ 100 nanometers;
3) between source, drain electrode, CdS quantum dot is grown: adopt continuous ionic layer absorption method, between electrode, grow CdS quantum dot under room temperature, cycling deposition number of times is 5 ~ 10 times, prepares gained CdS quantum dot photoelectric detection unit.
2. preparation method according to claim 1, is characterized in that using acetone ultrasonic cleaning silicon substrate 15 minutes in described step (1).
3. preparation method according to claim 1, is characterized in that in described step (2), Au thickness of electrode is 80 nanometers.
4. preparation method according to claim 1, is characterized in that in described step (3), cycling deposition number of times is 6 times.
5. preparation method according to claim 1, to it is characterized in that in described step (3) continuous ionic layer absorption method in room temperature in the electrodes between grow CdS quantum dot, first compound concentration is the Cd (NO of 0.5mol/L
3)
2cation presoma and Na
2the precursor solution of S anion presoma, four steps of then carrying out successively are: 1) sample is immersed Cd (NO
3)
2adsorption is carried out in precursor solution; 2) sample is immersed in deionized water clean; 3) sample is immersed Na
2react in S precursor solution; 4) sample is immersed in deionized water clean.
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| CN100565802C (en) * | 2007-05-31 | 2009-12-02 | 中国科学院半导体研究所 | With silicon dioxide is the method for mask alignment growth quantum point |
| CN103633183A (en) * | 2013-11-18 | 2014-03-12 | 西安电子科技大学 | Graphene medium-far infrared detector and preparing method thereof |
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2014
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