CN111048604B - Ultraviolet detector based on MgZnO/ZnS II type heterojunction and preparation method thereof - Google Patents
Ultraviolet detector based on MgZnO/ZnS II type heterojunction and preparation method thereof Download PDFInfo
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Abstract
A high-performance ultraviolet detector based on MgZnO/ZnS II type heterojunction and a preparation method thereof belong to the technical field of semiconductor ultraviolet photoelectric detection. The device sequentially comprises a quartz plate substrate, a main photosensitive layer MgZnO nano film, an interface modification layer ZnS film and an Au interdigital electrode from bottom to top; according to the invention, the interface modification layer ZnS film is introduced between the MgZnO nano film and the Au interdigital electrode and the II-type heterojunction is constructed, so that in a dark state, due to the existence of a built-in electric field and a depletion region, the density of majority carriers in the MgZnO/ZnS heterogeneous composite film is obviously reduced, and a composite film device is in a high-resistance state, thereby effectively reducing dark current. Under the ultraviolet illumination, the II type heterostructure can effectively reduce the recombination of electron-hole pairs and prolong the service life of a photon-generated carrier by promoting charge separation, and finally the device has higher gain and photocurrent.
Description
Technical Field
The invention belongs to the technical field of ultraviolet photoelectric detection, and particularly relates to a high-performance ultraviolet detector based on MgZnO/ZnS II type heterojunction and a preparation method thereof.
Background
The high-sensitivity ultraviolet photoelectric detector has important application in the fields of cell detection, remote control, environmental monitoring, photoelectric integrated circuits and the like. With the continuous progress of semiconductor material and device preparation process, the new generation of wide bandgap semiconductor ultraviolet detector overcomes the defects of complex structure, large volume, high energy consumption and the like of the traditional photomultiplier, and becomes an ultraviolet detector at presentThe focus of the technical field is detected. Meanwhile, the wide bandgap material has the visible blindness, so that the disadvantage that a silicon-based device cannot shield visible light by itself is effectively overcome, and the wide bandgap material has a plurality of varieties, particularly comprises a plurality of oxide materials such as ZnO and TiO2、Ga2O3MgZnO, etc. and the materials have stable properties, various preparation methods and low cost and have important application value.
With the continuous development of science and technology, the requirements of various application fields on performance parameters such as responsivity, detection sensitivity and the like of the ultraviolet detector are increasingly improved. Although the ultraviolet detector based on the wide bandgap oxide thin film developed at present has exhibited a certain photoelectric detection performance, due to some inherent defects of the wide bandgap material, such as low carrier mobility, short exciton life, and many traps and defects in the oxide material, the device based on a single material gradually fails to meet the requirements of various fields for higher ultraviolet detection performance, and the device needs to break through in dark current, light responsivity and other aspects. Therefore, on the basis of common oxide photosensitive materials and mainstream device structures, the preparation of composite materials and the physical mechanism of devices are improved and innovated by a reasonable and simple method so as to improve the comprehensive performance of the devices, and the method becomes a hotspot and a mainstream direction of research in the technical field of ultraviolet detection.
Disclosure of Invention
The invention aims to provide a MgZnO/ZnS II type heterojunction high-performance ultraviolet detector based on a continuous ion layer adsorption and reaction (SILAR) technology and a preparation method thereof.
According to the invention, the interface modification layer ZnS film is introduced between the MgZnO nano film of the main photosensitive layer and the Au interdigital electrode by using the SILAR technology to form the heterogeneous composite film, so that the performance of the ultraviolet detector can be effectively improved, and meanwhile, the dark current and noise of the device can be effectively limited while the photocurrent and responsivity of the device are improved by constructing the II-type heterogeneous structure, so that the performance of the device is comprehensively improved. ZnS, a type of ii-vi semiconductor, has good conductivity and stability, and a unique energy level position, making it a good choice as a functional layer material.
The invention relates to a MgZnO/ZnS II type heterojunction high-performance ultraviolet detector based on SILAR technology, which is characterized in that: the gold-silver-doped ZnO nano-film solar cell comprises a quartz plate substrate, a main photosensitive layer MgZnO nano-film prepared on the quartz plate substrate by adopting a sol-gel method, an interface modification layer ZnS film prepared on the surface of the MgZnO film by adopting an SILAR technology, and an Au interdigital electrode prepared on the surface of the ZnS film by adopting a magnetron sputtering method from bottom to top in sequence; the thickness of the quartz plate substrate is 1-2 mm, the thickness of the MgZnO nano film of the main photosensitive layer is 100-160 nm, the thickness of the ZnS film of the interface modification layer is 3-20 nm, the thickness of the Au interdigital electrode is 100-150 nm, and the electrode length, the electrode spacing and the electrode width are respectively 0.8-1.2 mm, 10-30 mu m and 10-30 mu m; the structure of the device is shown in fig. 1.
The MgZnO/ZnS II type heterojunction high-performance ultraviolet detector based on the SILAR technology has the main working principle that: the energy levels of the conduction band and the valence band of MgZnO are lower than those of ZnS, and a staggered II-type heterostructure is formed at the heterojunction. In a dark state, when MgZnO and ZnS are in contact, electrons in a ZnS body flow to MgZnO and holes in the MgZnO body flow to ZnS due to the existence of a II-type heterostructure, a built-in electric field pointing from ZnS to MgZnO is generated in the heterostructure, and meanwhile, multi-electron depletion regions are respectively generated near the interface of the two heterogeneous materials. Due to the existence of the depletion region, the density of majority carriers in the MgZnO/ZnS heterogeneous composite film in a dark state can be obviously reduced, and the composite film device is in a high-resistance state, so that the dark current is effectively reduced. Under the ultraviolet illumination, the II type heterostructure can effectively reduce the recombination of electron-hole pairs and prolong the service life of a photon-generated carrier by promoting charge separation, and meanwhile, a new photon-generated carrier is continuously excited in a heterojunction region, so that the number of the carrier is increased, and finally, the device has higher gain and photocurrent.
The invention relates to a preparation method of a MgZnO/ZnS II type heterojunction high-performance ultraviolet detector based on an SILAR technology, which comprises the following steps:
(1) cleaning a substrate
Sequentially placing the quartz plate substrate in acetone, ethanol and deionized water for ultrasonic cleaning for 10-20 minutes, and then drying;
(2) preparation of MgZnO Nano film
Firstly, preparing MgZnO sol: sequentially adding 0.53-2.63 g of zinc acetate, 0.13-0.64 g of magnesium acetate and 0.19-0.93 mL of ethanolamine into 10-50 mL of isopropanol at the temperature of 60-80 ℃, continuously stirring until a colorless transparent colloid is obtained, and standing and aging for 12-15 hours;
preparing an MgZnO nano film on the surface of the quartz plate substrate cleaned in the step (1): spin-coating MgZnO sol on the surface of a quartz plate substrate by using a spin-coating method to form a film, wherein the spin-coating speed is 2000-3500 rpm, and the spin-coating time is 20-30 seconds; then drying for 10-15 minutes at 160-200 ℃, cooling the substrate to room temperature, repeating the spin coating and drying steps for 3-7 times, and finally sintering the MgZnO sol film and the quartz plate substrate at 450-700 ℃ for 2-4 hours, so that a MgZnO nano film with the thickness of 100-160 nm is obtained on the surface of the quartz plate substrate;
(3) preparation of ZnS film
In a SILAR cycle, firstly, the quartz plate substrate coated with the MgZnO nano film prepared in the step (2) is put into 0.05-0.15M zinc nitrate aqueous solution containing 0.01-0.03M urea for dipping for 1-2 minutes to ensure that Zn is contained+Adsorbing ions on the MgZnO nano film, and then washing with deionized water; then, the substrate is dipped in 0.05-0.15M sodium sulfide aqueous solution containing 0.01-0.03M urea for 1-2 minutes to obtain S-Ions with Zn+ZnS is generated through reaction and is adsorbed on the MgZnO nano film, and then the film is washed by deionized water; performing SILAR circulation for 3-17 times, and finally drying at 70-90 ℃ to obtain a ZnS film with the thickness of 3-20 nm on the surface of the MgZnO nano film;
(4) preparation of Au interdigital electrode
The main process comprises the steps of spin coating photoresist, photoetching interdigital patterns, developing and sputtering;
firstly, spin-coating a layer of positive photoresist film with the thickness of 0.5-1 mu m on the surface of a ZnS film, wherein the spin-coating rotation speed is 800-1500 rpm, the spin-coating time is 20-30 seconds, and then pre-baking for 10-20 minutes at the temperature of 80-100 ℃; then, placing a photoetching mask plate which is complementary with the interdigital electrode structure on the photoresist, carrying out ultraviolet exposure for 60-90 seconds, and removing the exposed photoresist after developing for 30-40 seconds; finally, carrying out postbaking treatment at 100-120 ℃ for 10-20 minutes to obtain the photoresist film with the hollowed-out interdigital window;
preparing Au interdigital electrode by magnetron sputtering technology with vacuum degree of 4.0 × 10-3～8.0×10-3Pa, introducing argon at a flow rate of 20-30 sccm; then adjusting the pressure of the vacuum chamber to be 1-3 Pa, applying bias voltage, sputtering power of 60-120W and sputtering time of 10-15 minutes; and after sputtering is finished, obtaining an Au interdigital electrode in the hollow interdigital window, putting the substrate into acetone for ultrasonic treatment for 10-30 seconds, stripping the unexposed photoresist and the Au layer on the unexposed photoresist, washing off the acetone, and drying by blowing, thereby preparing the MgZnO/ZnS II type heterojunction high-performance ultraviolet detector based on the SILAR technology.
Drawings
FIG. 1: the structure of the device is shown schematically.
FIG. 2: the current-voltage characteristic curve of the device (ZnS film thickness of 7nm) related to the present invention.
FIG. 3: the current-voltage characteristic curve of the device (ZnS film thickness of 12nm) related to the present invention.
FIG. 4: the current-voltage characteristic curve of the device (ZnS film thickness of 18nm) related to the present invention.
As shown in fig. 1, the names of the components are quartz plate substrate 4, MgZnO nano-film 3, ZnS film 2, Au interdigital electrode 1, and incident ultraviolet light 5.
As shown in FIG. 2, when the ZnS layer thickness of the device was 7nm, the photocurrent of the device was 19.44 μ A, the dark current was 4.01nA, and the ratio of the light to the dark current was 4.85X 10 under a bias of 5V3。
As shown in FIG. 3, when the ZnS layer thickness of the device was 12nm, the photocurrent of the device was 300.83 μ A, the dark current was 1.32nA, and the ratio of the light to the dark current was 2.27X 10 under a bias of 5V5。
As shown in FIG. 4, when the ZnS layer thickness in the device was 18nm, the device was biased at 5VThe photocurrent of (A) was 8.39. mu.A, the dark current was 1.95nA, and the ratio of light to dark current was 4.31X 103。
Detailed Description
Example 1:
and (3) sequentially placing the quartz plate substrate with the size of 15mm multiplied by 1mm into acetone, ethanol and deionized water for ultrasonic cleaning for 10 minutes, and then drying.
And preparing the MgZnO nano film on the quartz plate substrate by adopting a sol-gel method. Firstly, preparing MgZnO sol: sequentially adding 1.58g of zinc acetate, 0.39g of magnesium acetate and 0.56mL of ethanolamine into 30mL of isopropanol at 75 ℃, continuously stirring until a colorless transparent colloid is obtained, and standing and aging for 15 hours; spin-coating MgZnO sol on the surface of the quartz plate substrate by a spin-coating method to form a film, wherein the spin-coating speed is 3000 r/min, and the spin-coating time is 30 seconds; and then drying the substrate for 10 minutes at 180 ℃, cooling the substrate to room temperature, repeating the spin coating and drying steps for 5 times, and finally sintering the MgZnO sol film and the quartz plate substrate at 500 ℃ for 2 hours, thereby obtaining the MgZnO nano film with the thickness of 140nm on the surface of the quartz plate substrate.
In a SILAR cycle, putting the prepared quartz plate substrate covered with the MgZnO nano film into 0.1M zinc nitrate aqueous solution containing 0.02M urea for soaking for 1 minute to enable Zn + ions to be adsorbed on the MgZnO nano film, and then washing with deionized water; the substrate was immersed in an aqueous solution of 0.1M sodium sulfide containing 0.02M urea for 1 minute to obtain a solution S-Ions with Zn+ZnS is generated through reaction and is adsorbed on the MgZnO nano film, and then the film is washed by deionized water; and 5 SILAR cycles are carried out, and finally drying is carried out at 80 ℃, so that a ZnS film with the thickness of 7nm is obtained on the surface of the MgZnO nano film.
The Au interdigital electrode is prepared by the steps of spin coating of photoresist, photoetching of interdigital patterns, development, sputtering and the like. Firstly, spin-coating a layer of positive photoresist with the thickness of 0.8 mu m on the surface of a ZnS film, wherein the spin-coating rotation speed is 1200 rpm, the spin-coating time is 20 seconds, and then pre-baking is carried out for 15 minutes at the temperature of 80 ℃; then, a photoetching mask plate which is complementary with the interdigital electrode structure is placed on the photoresist, ultraviolet exposure is carried out for 80 seconds, and development is carried out for 30 secondsThe exposed photoresist is removed; and finally, carrying out postbaking treatment at 120 ℃ for 15 minutes to obtain the photoresist film with the hollow interdigital window. Preparing Au interdigital electrode by magnetron sputtering technology with vacuum degree of 6 multiplied by 10-3Pa, introducing argon at a flow rate of 25 sccm; then adjusting the pressure of the vacuum chamber to 1.5Pa, applying bias voltage, sputtering power of 90W and sputtering time of 12 minutes; and after sputtering is finished, obtaining the Au interdigital electrode in the hollow interdigital window, putting the substrate into acetone for ultrasonic treatment for 15 seconds, stripping the unexposed photoresist and the Au layer on the unexposed photoresist, washing off the acetone, drying by blowing, and finishing the preparation of the device.
After the device with the ZnS thickness of 7nm is prepared, the device is subjected to light and dark current-voltage characteristic test. In a dark state, the dark current of the device under the bias voltage of 5V is 4.01 nA; at a wavelength of 325nm, the light intensity is 30 muW/cm2Under the irradiation of ultraviolet light, the photocurrent of the device under the bias of 5V is 19.44 muA, and the dark current ratio of the device is 4.85 multiplied by 103。
Example 2:
and (3) sequentially placing the quartz plate substrate with the size of 15mm multiplied by 1mm into acetone, ethanol and deionized water for ultrasonic cleaning for 10 minutes, and then drying.
And preparing the MgZnO nano film on the quartz plate substrate by adopting a sol-gel method. Firstly, preparing MgZnO sol: sequentially adding 1.58g of zinc acetate, 0.39g of magnesium acetate and 0.56mL of ethanolamine into 30mL of isopropanol at 75 ℃, continuously stirring until a colorless transparent colloid is obtained, and standing and aging for 15 hours; spin-coating MgZnO sol on the surface of the quartz plate substrate by a spin-coating method to form a film, wherein the spin-coating speed is 3000 r/min, and the spin-coating time is 30 seconds; and then drying the substrate for 10 minutes at 180 ℃, cooling the substrate to room temperature, repeating the spin coating and drying steps for 5 times, and finally sintering the MgZnO sol film and the quartz plate substrate at 500 ℃ for 2 hours, thereby obtaining the MgZnO nano film with the thickness of 140nm on the surface of the quartz plate substrate.
In a SILAR cycle, the prepared quartz plate substrate covered with the MgZnO nano film is put into 0.1M zinc nitrate aqueous solution containing 0.02M urea for soaking for 1 minute, so that Zn + ions are adsorbed on MWashing the gZnO nano film with deionized water; the substrate was immersed in an aqueous solution of 0.1M sodium sulfide containing 0.02M urea for 1 minute to obtain a solution S-Ions with Zn+ZnS is generated through reaction and is adsorbed on the MgZnO nano film, and then the film is washed by deionized water; performing SILAR circulation for 10 times, and drying at 80 deg.C to obtain ZnS film with thickness of 12nm on the surface of the MgZnO nano film.
The Au interdigital electrode is prepared by the steps of spin coating of photoresist, photoetching of interdigital patterns, development, sputtering and the like. Firstly, spin-coating a layer of positive photoresist with the thickness of 0.8 mu m on the surface of a ZnS film, wherein the spin-coating rotation speed is 1200 rpm, the spin-coating time is 20 seconds, and then pre-baking is carried out for 15 minutes at the temperature of 80 ℃; then, a photoetching mask plate which is complementary with the interdigital electrode structure is placed on the photoresist, ultraviolet exposure is carried out for 80 seconds, and the exposed photoresist is removed after development for 30 seconds; and finally, carrying out postbaking treatment at 120 ℃ for 15 minutes to obtain the photoresist film with the hollow interdigital window. Preparing Au interdigital electrode by magnetron sputtering technology with vacuum degree of 6 multiplied by 10-3Pa, introducing argon at a flow rate of 25 sccm; then adjusting the pressure of the vacuum chamber to 1.5Pa, applying bias voltage, sputtering power of 90W and sputtering time of 12 minutes; and after sputtering is finished, obtaining the Au interdigital electrode in the hollow interdigital window, putting the substrate into acetone for ultrasonic treatment for 15 seconds, stripping the unexposed photoresist and the Au layer on the unexposed photoresist, washing off the acetone, drying by blowing, and finishing the preparation of the device.
After the device with the ZnS thickness of 12nm is prepared, the device is subjected to light and dark current-voltage characteristic test. In a dark state, the dark current of the device under the bias voltage of 5V is 1.32 nA; at a wavelength of 325nm, the light intensity is 30 muW/cm2The photocurrent of the device under 5V bias is 300.83 muA, and the dark current ratio of the device is 2.27 x 105。
Example 3:
the quartz plate substrate with the size of 15mm multiplied by 1mm is sequentially placed in acetone, ethanol and deionized water for ultrasonic cleaning for 10 minutes by an ultrasonic cleaning method, and then dried.
And preparing the MgZnO nano film on the quartz plate substrate by adopting a sol-gel method. Firstly, preparing MgZnO sol: sequentially adding 1.58g of zinc acetate, 0.39g of magnesium acetate and 0.56mL of ethanolamine into 30mL of isopropanol at 75 ℃, continuously stirring until a colorless transparent colloid is obtained, and standing and aging for 15 hours; spin-coating MgZnO sol on the surface of the quartz plate substrate by a spin-coating method to form a film, wherein the spin-coating speed is 3000 r/min, and the spin-coating time is 30 seconds; and then drying the substrate for 10 minutes at 180 ℃, cooling the substrate to room temperature, repeating the spin coating and drying steps for 5 times, and finally sintering the MgZnO sol film and the quartz plate substrate at 500 ℃ for 2 hours, thereby obtaining the MgZnO nano film with the thickness of 140nm on the surface of the quartz plate substrate.
In a SILAR cycle, putting the prepared quartz plate substrate covered with the MgZnO nano film into 0.1M zinc nitrate aqueous solution containing 0.02M urea for soaking for 1 minute to enable Zn + ions to be adsorbed on the MgZnO nano film, and then washing with deionized water; the substrate was immersed in an aqueous solution of 0.1M sodium sulfide containing 0.02M urea for 1 minute to obtain a solution S-Ions with Zn+ZnS is generated through reaction and is adsorbed on the MgZnO nano film, and then the film is washed by deionized water; and carrying out 15 SILAR cycles, and finally drying at 80 ℃ to obtain a ZnS film with the thickness of 18nm on the surface of the MgZnO nano film.
The Au interdigital electrode is prepared by the steps of spin coating of photoresist, photoetching of interdigital patterns, development, sputtering and the like. Firstly, spin-coating a layer of positive photoresist with the thickness of 0.8 mu m on the surface of a ZnS film, wherein the spin-coating rotation speed is 1200 rpm, the spin-coating time is 20 seconds, and then pre-baking is carried out for 15 minutes at the temperature of 80 ℃; then, a photoetching mask plate which is complementary with the interdigital electrode structure is placed on the photoresist, ultraviolet exposure is carried out for 80 seconds, and the exposed photoresist is removed after development for 30 seconds; and finally, carrying out postbaking treatment at 120 ℃ for 15 minutes to obtain the photoresist film with the hollow interdigital window. Preparing Au interdigital electrode by magnetron sputtering technology with vacuum degree of 6 multiplied by 10-3Pa, introducing argon at a flow rate of 25 sccm; then adjusting the pressure of the vacuum chamber to 1.5Pa, applying bias voltage, sputtering power of 90W and sputtering time of 12 minutes; after sputtering is finished, obtaining Au interdigital electrodes in the hollow interdigital windows, putting the substrate into acetone for ultrasonic treatment for 15 seconds, and connecting unexposed photoresistAnd stripping the Au layer on the Au layer, washing off acetone and drying by blowing, thereby completing the preparation of the device.
After the device with the ZnS thickness of 18nm is prepared, the device is subjected to light and dark current-voltage characteristic test. In a dark state, the dark current of the device under the bias voltage of 5V is 1.95 nA; at a wavelength of 325nm, the light intensity is 30 muW/cm2Under the irradiation of ultraviolet light, the photocurrent of the device under the bias of 5V is 8.39 muA, and the dark current ratio of the device is 4.31 multiplied by 103。
Claims (6)
1. An ultraviolet detector based on MgZnO/ZnS II type heterojunction is characterized in that: the gold-silver-doped ZnO nano-film material sequentially comprises a quartz plate substrate, a main photosensitive layer MgZnO nano-film prepared on the quartz plate substrate by adopting a sol-gel method, an interface modification layer ZnS film prepared on the surface of the MgZnO film by adopting a continuous ion layer adsorption and reaction technology, and an Au interdigital electrode prepared on the surface of the ZnS film by adopting a magnetron sputtering method from bottom to top.
2. The ultraviolet detector based on the MgZnO/ZnS type II heterojunction as claimed in claim 1 wherein: the thickness of the quartz plate substrate is 1-2 mm, the thickness of the MgZnO nano film of the main photosensitive layer is 100-160 nm, the thickness of the ZnS film of the interface modification layer is 3-20 nm, the thickness of the Au interdigital electrode is 100-150 nm, and the electrode length, the electrode spacing and the electrode width are respectively 0.8-1.2 mm, 10-30 mu m and 10-30 mu m.
3. The method for preparing an ultraviolet detector based on MgZnO/ZnS II type heterojunction as in claim 1, which comprises the following steps:
(1) sequentially placing the quartz plate substrate in acetone, ethanol and deionized water for ultrasonic cleaning for 10-20 minutes, and then drying;
(2) preparation of MgZnO Nano film
Firstly, preparing MgZnO sol: sequentially adding 0.53-2.63 g of zinc acetate, 0.13-0.64 g of magnesium acetate and 0.19-0.93 mL of ethanolamine into 10-50 mL of isopropanol at the temperature of 60-80 ℃, continuously stirring until a colorless transparent colloid is obtained, and standing and aging for 12-15 hours;
preparing an MgZnO nano film on the surface of the quartz plate substrate cleaned in the step (1): spin-coating MgZnO sol on the surface of the quartz plate substrate by a spin-coating method to form a film; then drying for 10-15 minutes at 160-200 ℃, cooling the substrate to room temperature, repeating the spin coating and drying steps for 3-7 times, and finally sintering the MgZnO sol film and the quartz plate substrate at 450-700 ℃ for 2-4 hours, so that a MgZnO nano film with the thickness of 100-160 nm is obtained on the surface of the quartz plate substrate;
(3) preparation of ZnS film
In a SILAR cycle, firstly, the quartz plate substrate coated with the MgZnO nano film prepared in the step (2) is put into 0.05-0.15M zinc nitrate aqueous solution containing 0.01-0.03M urea for dipping for 1-2 minutes to ensure that Zn is contained+Adsorbing ions on the MgZnO nano film, and then washing with deionized water; then, the substrate is dipped in 0.05-0.15M sodium sulfide aqueous solution containing 0.01-0.03M urea for 1-2 minutes to obtain S-Ions with Zn+ZnS is generated through reaction and is adsorbed on the MgZnO nano film, and then the film is washed by deionized water; performing SILAR circulation for 3-17 times, and finally drying at 70-90 ℃ to obtain a ZnS film with the thickness of 3-20 nm on the surface of the MgZnO nano film;
(4) preparation of Au interdigital electrode
The main process comprises the steps of spin coating photoresist, photoetching interdigital patterns, developing and sputtering;
firstly, spin-coating a layer of positive photoresist film with the thickness of 0.5-1 mu m on the surface of a ZnS film, and then prebaking at the temperature of 80-100 ℃ for 10-20 minutes; then, placing a photoetching mask plate which is complementary with the interdigital electrode structure on the photoresist, carrying out ultraviolet exposure for 60-90 seconds, and removing the exposed photoresist after developing for 30-40 seconds; finally, carrying out postbaking treatment at 100-120 ℃ for 10-20 minutes to obtain the photoresist film with the hollowed-out interdigital window;
preparing an Au interdigital electrode by adopting a magnetron sputtering technology, obtaining the Au interdigital electrode in a hollow interdigital window after sputtering is finished, putting a substrate into acetone for ultrasonic treatment for 10-30 seconds, stripping unexposed photoresist and an Au layer on the unexposed photoresist, washing off the acetone and drying, and preparing the MgZnO/ZnS II type heterojunction high-performance ultraviolet detector based on the SILAR technology.
4. The method for preparing an ultraviolet detector based on MgZnO/ZnS II type heterojunction as claimed in claim 3, wherein: the spin coating speed for forming the MgZnO sol film on the surface of the quartz plate by using a spin coating method is 2000-3500 rpm, and the spin coating time is 20-30 seconds.
5. The method for preparing an ultraviolet detector based on MgZnO/ZnS II type heterojunction as claimed in claim 3, wherein: the spin coating speed of a positive photoresist film with the thickness of 0.5-1 mu m on the surface of the ZnS film is 800-1500 rpm, and the spin coating time is 20-30 seconds.
6. The method for preparing an ultraviolet detector based on MgZnO/ZnS II type heterojunction as in claim 4, wherein: the vacuum degree of the Au interdigital electrode prepared by adopting the magnetron sputtering technology is 4.0 multiplied by 10-3～8.0×10-3Pa, introducing argon at a flow rate of 20-30 sccm; adjusting the pressure of the vacuum chamber to 1-3 Pa, applying bias voltage, sputtering power to 60-120W, and sputtering time to 10-15 minutes.
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