CN114203841A - MgZnO film and band gap adjusting method and application thereof - Google Patents
MgZnO film and band gap adjusting method and application thereof Download PDFInfo
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- 238000012360 testing method Methods 0.000 claims abstract description 28
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- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000004044 response Effects 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 238000000411 transmission spectrum Methods 0.000 claims abstract description 10
- 238000004458 analytical method Methods 0.000 claims abstract description 7
- 238000001228 spectrum Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 58
- 239000010409 thin film Substances 0.000 claims description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 238000001878 scanning electron micrograph Methods 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000009827 uniform distribution Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 238000000825 ultraviolet detection Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000002235 transmission spectroscopy Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000025600 response to UV Effects 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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Abstract
The invention relates to the technical field of MgZnO film band gap adjustment, in particular to an MgZnO film and a band gap adjustment method and application thereof, which comprises the following steps of observing the MgZnO film according to an SEM picture, an AFM picture and an EDS picture of the MgZnO film; obtaining an MgZnO film based on an ALD (atomic layer deposition) technology low-temperature growth technology, and preparing a planar photoconductive detector; testing the characteristics of the planar photoconductive detector by using a semiconductor parameter analyzer; performing a switch test of the optical response on the device; and (4) carrying out transmission spectrum test analysis on the returned sample to determine whether the device has spectrum selectivity, so that the occurrence of phase splitting of the film can be avoided.
Description
Technical Field
The invention relates to the technical field of band gap adjustment of MgZnO films, in particular to an MgZnO film and a band gap adjusting method and application thereof.
Background
At present, ZnO doped with Mg can construct a heterojunction on one hand, and is convenient for studying the electron transport behavior of a semiconductor heterostructure through a polarization phenomenon, and on the other hand, the ZnO doped with Mg also has an important role in energy band engineering, such as the field of studying short-wavelength photoelectric detection devices facing 47 wide-bandgap oxide semiconductor carrier regulation and control technology, energy band engineering and application. Compared with other wide bandgap materials such as GaN, SiC and the like, ZnO raw materials are easy to obtain, and have strong film forming property and good stability. After Mg is doped to form the MgZnO alloy semiconductor, the band gap can be adjusted between 3.3eV (ZnO) and 7.8eV (MgO).
The cut-off absorption edge of the MgZnO alloy continuously generates blue shift from an ultraviolet region along with the increase of the Mg content, can cover the main range of 200-280nm of the atmospheric ozone layer absorption of the earth, and further realizes the detection of the ultraviolet light in the solar dead zone, so the MgZnO alloy has great application value in military and economy. Therefore, the MgZnO alloy with the high Mg component has unique application and research values, and meanwhile, the high Mg component easily causes split phase, so that the MgZnO alloy with a single phase is difficult to obtain.
The MgZnO is used for ultraviolet detection, and the research shows that the heterojunction MgZnO film grown under the condition shows higher sensitivity in the aspect of ultraviolet detection, but the phase separation of the film shows that the current process condition needs to be continuously improved.
Disclosure of Invention
The invention aims to provide an MgZnO film and a band gap adjusting method and application thereof, and aims to solve the technical problem that the MgZnO film grown under the condition shows higher sensitivity in the aspect of ultraviolet detection when being used for ultraviolet detection in the prior art and shows that the current process condition needs to be continuously improved due to phase separation of the film.
In order to achieve the purpose, the MgZnO film and the band gap adjusting method and application thereof adopted by the invention comprise the following steps,
observing the MgZnO film according to the SEM picture, the AFM picture and the EDS picture of the MgZnO film;
obtaining an MgZnO film based on an ALD (atomic layer deposition) technology low-temperature growth technology, and preparing a planar photoconductive detector;
testing the characteristics of the planar photoconductive detector by using a semiconductor parameter analyzer;
performing a switch test of the optical response on the device;
and (4) carrying out transmission spectrum test analysis on the returned sample to determine whether the device has spectrum selectivity.
In "observing the MgZnO film according to SEM picture, AFM picture, EDS picture of the MgZnO film", the method further includes,
preparing SEM pictures, AFM pictures and EDS pictures of MgZnO films;
the surface of the film obtained by ALD low-temperature growth is flat and continuous through SEM image observation;
the uniform distribution and the roughness of the film are observed by an AFM picture;
and obtaining the distribution of the three elements of Mg, Zn and O by adopting an ALD low-temperature growth method on the surface of the EDS chart.
In the 'obtaining the MgZnO thin film based on the ALD technology low-temperature growth technology and preparing the planar photoconductive detector', the method also comprises,
the MgZnO film obtained based on the ALD technology low-temperature growth technology is subjected to metal electrode evaporation by adopting a standard photoetching process and an electron beam evaporation method, and the electrode structure is Ti/Au10/80 nm.
In the "testing characteristics of a flat photoconductive-type detector using a semiconductor parameter analyzer", the method further comprises,
a semiconductor parameter analyzer is adopted, Ti/Au is used as a contact electrode, and the I-V characteristic of the MgZnO/Al2O3 planar photoconductive detector is tested under the condition of a room temperature dark field.
In the "testing of the device for switching optically responsive", the method further comprises,
measuring the current of a dark field of the device under the condition of 0-5V;
measuring the photocurrent of the device parameter after irradiation by an Hg lamp;
and performing a switch test of the optical response on the device.
An MgZnO film and a band gap adjusting method thereof are applied to improving the growth quality of the MgZnO film.
The MgZnO film and the band gap adjusting method and application thereof comprise the following steps of observing the MgZnO film according to an SEM picture, an AFM picture and an EDS picture of the MgZnO film; obtaining an MgZnO film based on an ALD (atomic layer deposition) technology low-temperature growth technology, and preparing a planar photoconductive detector; testing the characteristics of the planar photoconductive detector by using a semiconductor parameter analyzer; performing a switch test of the optical response on the device; and (4) carrying out transmission spectrum test analysis on the returned sample to determine whether the device has spectrum selectivity, so that the occurrence of phase splitting of the film can be avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a surface characterization SEM image of a MgZnO film of the present invention.
FIG. 2 is a surface characterization AFM image of a MgZnO film of the present invention.
FIG. 3 is a surface characterization EDS map of a MgZnO film of the present invention.
FIG. 4 shows Al in the present invention2O3The MgZnO photoconductive detector structure is a substrate.
Fig. 5 is an I-V plot of a device of the present invention.
Fig. 6 is a graph of time-photocurrent of the device under 2V bias and Hg lamp illumination in accordance with the present invention.
Fig. 7 is a transmission spectrum of the MgZnO thin film of the present invention.
Fig. 8 is a flowchart of the MgZnO thin film and the band gap adjusting method thereof of the present invention.
FIG. 9 is a flow chart for observing an MgZnO thin film according to SEM, AFM and EDS of the MgZnO thin film of the present invention.
Fig. 10 is a flow chart of the present invention for performing a switch test of the optical response of the device.
FIG. 11 is a flow chart of transmission spectrum test analysis of a returned sample to determine whether the device is spectrally selective in accordance with the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout.
Referring to fig. 8 to 11, the present invention provides an MgZnO thin film, a bandgap adjustment method and applications thereof, including the following steps,
s101: observing the MgZnO film according to the SEM picture, the AFM picture and the EDS picture of the MgZnO film;
s1011: preparing SEM pictures, AFM pictures and EDS pictures of MgZnO films;
s1012: the surface of the film obtained by ALD low-temperature growth is flat and continuous through SEM image observation;
s1013: the uniform distribution and the roughness of the film are observed by an AFM picture;
s1014: obtaining the distribution of three elements of Mg, Zn and O by using an ALD low-temperature growth method on the surface of an EDS chart;
in this embodiment, it can be seen from the SEM image of FIG. 1 that the film obtained by ALD low-temperature growth has a flat and continuous surface, and the AFM image of FIG. 2 shows that the film has a uniform distribution and a roughness of about 5.4 nm. As shown in FIG. 3, the distribution of the three elements Mg, Zn and O is uniform. The ALD low-temperature growth method is adopted to obtain the continuous and uniform thin film with the uniformly distributed three elements of Mg, Zn and O.
S102: obtaining an MgZnO film based on an ALD (atomic layer deposition) technology and a planar photoconductive detector, and evaporating to form a metal electrode by adopting a standard photoetching process and an electron beam evaporation method, wherein the electrode structure is Ti/Au10/80 nm;
in this embodiment, a MgZnO thin film obtained by the ALD technique low-temperature growth technique is experimentally deposited with metal electrodes by using a standard photolithography process and an electron beam evaporation method, and the electrode structure is Ti/Au10/80nm, so as to prepare the photoconductive detector with a planar structure as shown in fig. 4.
S103: the method comprises the steps of testing the characteristics of a planar photoconductive detector by using a semiconductor parameter analyzer, testing the I-V characteristics of the MgZnO/Al2O3 planar photoconductive detector under the room-temperature dark field condition by using the semiconductor parameter analyzer and Ti/Au as a contact electrode;
in this embodiment, the I-V characteristics of the MgZnO/Al2O3 planar photoconductive detector were tested using a Keithley Technologies model 2600 semiconductor parametric analyzer with Ti/Au as contact electrodes under room temperature dark field conditions.
S104: performing a switch test of the optical response on the device; (ii) a
S1041: measuring the current of a dark field of the device under the condition of 0-5V;
s1042: measuring the photocurrent of the device parameter after irradiation by an Hg lamp;
s1043: performing a switch test of the optical response on the device;
in this embodiment, as shown in fig. 5, the device has a lower current in the dark field under the condition of 0-5V, which indicates that the device has a higher resistance, which may be caused by the thin film having more grain boundaries. After irradiation by Hg lamp, the device generates large photocurrent, which reaches 10-7A, and the ratio of light/dark current is about 104. The device is predicted to have sensitive detection performance.
Next, the device is subjected to a switch test for optical response. As shown in fig. 6, when the Hg lamp was turned on/off, the photocurrent of the device rapidly returned to the original value. The rising time is defined as the research interval of the forbidden oxide semiconductor carrier regulation technology and the energy band engineering and application of 10% -90% of the maximum value of the obtained photocurrent, the falling time is the interval of 90% -10% of the maximum value of the obtained photocurrent, the rising time of the photocurrent of the device is about 0.6s under 2V bias voltage, and the falling time is about 0.48 s. The rise time is greater than the fall time, which may be due to the planar structure, which requires more carriers to accumulate during illumination to generate sufficient charge to break through the barriers to defects such as grain boundaries, etc., while at the end of illumination, the carriers can recombine rapidly due to the electric field previously generated by the accumulation of carriers due to grain boundaries, etc. Meanwhile, multi-cycle time resolution photocurrent tests show that the device has good repeatability for deep ultraviolet response.
S105: performing transmission spectrum test analysis on the returned sample to determine whether the device has spectrum selectivity;
s1051: characterizing whether the grown film is a single phase by transmission spectroscopy;
s1052: annealing the film, wherein the annealing adjustment is respectively 600-700 ℃, and air annealing is carried out for 30 min;
s1053: carrying out transmission spectrum test analysis on the annealed sample to determine whether the device has spectrum selectivity;
in this embodiment, although we obtained a photodetector with ultra-low dark current, with a faster response to uv light, to determine if the device was spectrally selective, we first characterized by transmission spectroscopy whether the grown film was a single phase. As shown in FIG. 7, we tested the transmission spectrum of the MgZnO/Al2O3 film, and from the transmission spectrum, we found that the film was phase-separated, and that the cut-offs occurred at 377nm and 280nm, indicating that the film was phase-separated during the growth process. We then annealed the films at 600 deg.C, 700 deg.C for 30min in air. We analyzed the annealed samples for transmission spectroscopy, and annealing after growth did not allow the film to recrystallize to promote the formation of a single phase. This is probably due to the large lattice difference between cubic MgO and hexagonal ZnO, and the very high Mg incorporation by ALD low temperature growth method. It is also shown that the characteristics of the thin film obtained by the ALD low temperature growth method are mainly determined by the growth process, and therefore, we will improve the growth quality of the thin film by modifying the growth process, such as changing the growth temperature, adding an annealing process during the growth process, etc.
An MgZnO film and a band gap adjusting method thereof are applied to improving the growth quality of the MgZnO film.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (6)
1. An MgZnO film and a band gap adjusting method thereof are characterized by comprising the following steps,
observing the MgZnO film according to the SEM picture, the AFM picture and the EDS picture of the MgZnO film;
obtaining an MgZnO film based on an ALD (atomic layer deposition) technology low-temperature growth technology, and preparing a planar photoconductive detector;
testing the characteristics of the planar photoconductive detector by using a semiconductor parameter analyzer;
performing a switch test of the optical response on the device;
and (4) carrying out transmission spectrum test analysis on the returned sample to determine whether the device has spectrum selectivity.
2. The MgZnO thin film and the band gap adjusting method thereof according to claim 1, wherein in "observing the MgZnO thin film according to SEM picture, AFM picture, EDS picture of the MgZnO thin film", the method further comprises,
preparing SEM pictures, AFM pictures and EDS pictures of MgZnO films;
the surface of the film obtained by ALD low-temperature growth is flat and continuous through SEM image observation;
the uniform distribution and the roughness of the film are observed by an AFM picture;
and obtaining the distribution of the three elements of Mg, Zn and O by adopting an ALD low-temperature growth method on the surface of the EDS chart.
3. The MgZnO thin film and the band gap adjusting method thereof according to claim 1, wherein in the 'obtaining MgZnO thin film based on ALD technique low temperature growth technique and preparing planar photoconductive type detector', the method further comprises,
the MgZnO film obtained based on the ALD technology low-temperature growth technology is subjected to metal electrode evaporation by adopting a standard photoetching process and an electron beam evaporation method, and the electrode structure is Ti/Au10/80 nm.
4. The MgZnO thin film and the band gap adjusting method thereof according to claim 1, wherein in the 'testing characteristics of the planar photoconductive type detector using a semiconductor parameter analyzer', the method further comprises,
a semiconductor parameter analyzer is adopted, Ti/Au is used as a contact electrode, and the I-V characteristic of the MgZnO/Al2O3 planar photoconductive detector is tested under the condition of a room temperature dark field.
5. The MgZnO thin film and the band gap adjusting method thereof according to claim 1, wherein in the 'on-off test for photoresponse to the device', the method further comprises,
measuring the current of a dark field of the device under the condition of 0-5V;
measuring the photocurrent of the device parameter after irradiation by an Hg lamp;
and performing a switch test of the optical response on the device.
6. An MgZnO film and a band gap adjusting method thereof are characterized in that the MgZnO film is applied to improving the growth quality of the MgZnO film.
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|---|---|---|---|---|
| CN104112671A (en) * | 2014-07-18 | 2014-10-22 | 北京大学 | Preparation method for zinc oxide thin-film transistor |
| CN109301036A (en) * | 2018-11-14 | 2019-02-01 | 长春理工大学 | A kind of uniform MgZnO film technology of preparing based on laser sintered method |
| CN111048604A (en) * | 2019-12-17 | 2020-04-21 | 吉林大学 | Ultraviolet detector based on MgZnO/ZnS II type heterojunction and preparation method thereof |
| CN111261735A (en) * | 2020-03-19 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | ZnMgO film, ultraviolet detector and preparation method thereof |
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- 2021-12-15 CN CN202111535593.8A patent/CN114203841A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112671A (en) * | 2014-07-18 | 2014-10-22 | 北京大学 | Preparation method for zinc oxide thin-film transistor |
| CN109301036A (en) * | 2018-11-14 | 2019-02-01 | 长春理工大学 | A kind of uniform MgZnO film technology of preparing based on laser sintered method |
| CN111048604A (en) * | 2019-12-17 | 2020-04-21 | 吉林大学 | Ultraviolet detector based on MgZnO/ZnS II type heterojunction and preparation method thereof |
| CN111261735A (en) * | 2020-03-19 | 2020-06-09 | 中国科学院长春光学精密机械与物理研究所 | ZnMgO film, ultraviolet detector and preparation method thereof |
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