CN100565802C - With silicon dioxide is the method for mask alignment growth quantum point - Google Patents
With silicon dioxide is the method for mask alignment growth quantum point Download PDFInfo
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- CN100565802C CN100565802C CNB2007100998639A CN200710099863A CN100565802C CN 100565802 C CN100565802 C CN 100565802C CN B2007100998639 A CNB2007100998639 A CN B2007100998639A CN 200710099863 A CN200710099863 A CN 200710099863A CN 100565802 C CN100565802 C CN 100565802C
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Abstract
A kind of is the method for mask alignment growth quantum point with silicon dioxide, it is characterized in that this method comprises following preparation process: step 1: select a substrate, at this steam coating silicon dioxide layer above substrate; Step 2: be coated with one deck photoresist on silicon dioxide layer, electron beam exposure carves required graphic structure on photoresist; Step 3: sample is carried out dry etching, required graphic structure is transferred to the surface of silicon dioxide layer; Step 4: sample is removed photoresist handle and clean; Step 5: the sample of handling well is put into growth room's growth GaAs material; Step 6: the sample after will growing adopts the hydrofluoric acid solution corrosion, removes the remaining silica layer.
Description
Technical field
The present invention relates to technical field of semiconductors, be the growing technology of quanta point material, be meant that especially a kind of is the method for mask alignment growth quantum point with silicon dioxide.
Background technology
Quantum dot has the optical property and the electrical properties of many uniquenesses in field of semiconductor materials, more sharp-pointed as light absorption, the gain of light and light reflection spectrum, the binding energy of exciton and impurity increases, quantum Interference, quantum tunneling effect and coulomb blockade effect (Columbblaskade) etc.These character make quantum dot have great application potential at photoelectron, microelectronic, as develop that threshold value is lower, efficient is higher, the better quantum dot laser of thermal stability, the microelectronic component of more speed (HEMT, FET) and Monoelectron memory device etc.In the preparation of quanta point material, the method that adopts is the self-assembled growth quantum dot usually, and the strain self-assembly method can be prepared high density, flawless quantum dot, and dimensional homogeneity is not high enough, distribution waits shortcoming at random but also exist.Some devices have requirement on devices Quantum Dots Growth such as special requirement such as Quantum Cellular Automata, single-electronic transistor, single-electron memory in certain location to the distribution of quantum dot, and these devices important devices of nanoelectronics development just.Therefore, how to realize that location, the controllable growth of quantum dot are just becoming a focus of quanta point material research.The method of locating growth quantum point, existing a lot of in recent years research, as utilize the dislocation grid of buried regions influence the nucleation site of quantum dot, quantum dot is distributed along dislocation reach the purpose of controlling Quantum Dots Growth; The growth multi-layer quantum point makes quantum dot through being orderly distribution after the growth of multilayer stacking; Facing the growth that utilizes the atomic steps control quantum dot face on the crystal face of growing on the crystal face etc.But the poor effect of these method locating growth quantum points, but the located growth of quantum dot on substrate is still complicated process, the selectivity location growth that need provide effective method to realize quantum dot.
Summary of the invention
The objective of the invention is to, providing a kind of is the method for mask alignment growth quantum point with silicon dioxide, and it is the patterned silicon dioxide mask technology that adopts on the GaAs substrate, can accurately control the position of Quantum Dots Growth.
The invention provides a kind of is the method for mask alignment growth quantum point with silicon dioxide, it is characterized in that this method comprises following preparation process:
Step 1: select a substrate, at this steam coating silicon dioxide layer above substrate;
Step 2: be coated with one deck photoresist on silicon dioxide layer, electron beam exposure carves required graphic structure on photoresist;
Step 3: sample is carried out dry etching, required graphic structure is transferred to the surface of silicon dioxide layer;
Step 4: sample is removed photoresist handle and clean;
Step 5: the sample of handling well is put into growth room's growth GaAs material;
Step 6: the sample after will growing adopts the hydrofluoric acid solution corrosion, removes the remaining silica layer.
The material of wherein said substrate is GaAs.
Wherein step 1 described on substrate the thickness of the silicon dioxide layer of evaporation be 50nm.
Wherein the figure diameter that carves of the described electron beam exposure of step 2 is less than 100nm.
Wherein step 4 is described removes photoresist and clean to sample, be meant and adopt the liquid that removes photoresist to remove after the photoresist of sample surfaces, in the organic solvent that boils, remove organic substance and impurity in the following order, and with this process circulation 2 times, comprising: benzinum 2-3 minute, absolute ethyl alcohol 2-3 minute, acetone 2-3 minute, trichloroethylene 8 minutes-2 times, acetone 2-3 minute, absolute ethyl alcohol 2-3 minute, carry out several again all over the high purity deionized water flushing.
Wherein step 5 is described puts into growth room's growth GaAs material with sample, and it is to adopt the solid-state molecular beam epitaxy at high temperature to grow, and growth temperature is 620 ℃, and the speed of growth is 0.09 μ m/h, and As presses and remains on 4 * 10
-6Pa, growth thickness are 30nm.
Description of drawings
In order to further specify feature of the present invention and effect, below in conjunction with drawings and Examples the present invention is described further as after, wherein:
Fig. 1 is the structural representation that carves figure on photoresist;
Fig. 2 is the structural representation of substrate and silicon dioxide mask before the growth GaAs material.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below with reference to accompanying drawing, the present invention is described in more detail.
See also Figure 1 and Figure 2, the present invention is the method for mask alignment growth quantum point with silicon dioxide, comprising:
(1) at first on semi-insulated planar GaAs substrate 10, adopts the silicon dioxide layer 20 about 50nm on plasma reinforced chemical vapour deposition technology (PECVD) evaporation.The purpose of steam coating silicon dioxide layer 20 is for locating growth quantum point provides mask, and adopting the purpose of PECVD technology steam coating silicon dioxide layer 20 is in order to obtain smooth mask.
(2) evaporation has on the GaAs substrate 10 of silicon dioxide layer 20 and coats photoresist layer 30, and adopting electron beam lithography to carve diameter is about 90nm, and centre-to-centre spacing is the circular hole about 200nm.Purpose is for locating growth quantum point provides window, as shown in Figure 1.
(3) adopt dry etching and remove photoresist and clean, wherein adopting dry etching is that the silicon dioxide layer in the graphical window 20 is etched away, and graphic structure is transferred to the surface of silicon dioxide layer 20.The gas that dry etching adopts is the mist of silicon tetrachloride and argon gas, then photoresist 30 is removed, and makes the GaAs in the graphical window be exposed to growing surface, as shown in Figure 2; Wherein sample is carried out clean, be meant and adopt the liquid that removes photoresist to remove after the photoresist 30 of sample surfaces, in the organic solvent that boils, remove organic substance and impurity in the following order, and with this process circulation 2 times, comprising: benzinum 2-3 minute, absolute ethyl alcohol 2-3 minute, acetone 2-3 minute, trichloroethylene 8 minutes-2 times, acetone 2-3 minute, absolute ethyl alcohol 2-3 minute, carry out several again all over the high purity deionized water flushing.
(4) grow in the growth room that sends into molecular beam epitaxial device after the substrate 10 that will have a silicon dioxide layer 20 cleans.Growth temperature is 620 ℃, and the speed of growth is 0.09 μ m/h, the GaAs of the 30nm that grown.Owing to the GaAs that grows down 620 ℃ of high temperature, the adsorptivity of GaAs on silicon dioxide layer 20 is very little, adsorptivity is very big on the GaAs that is exposed to growing surface by the window of leaving, by the migration from the teeth outwards of Ga atom, GaAs in graphical window, realizes the located growth of GaAs quantum dot with major sedimentary.
(5) sample after will growing takes out, adopt hydrofluoric acid solution to corrode, because hydrofluoric acid solution has good selectivity for silicon dioxide layer 20 with GaAs, can silicon dioxide layer 20 be eroded with very fast speed, but the quantum dot that does not corrode GaAs substrate 10 and grown.After so hydrofluoric acid solution erodes silicon dioxide layer 20 fully, only stay the GaAs quantum dot of located growth in graphical window, adopt the arrangement of quantum dot of method of the present invention growth orderly, all be arranged in the graphical window of the silicon dioxide layer 20 that electron beam exposure carves, realized the located growth of quantum dot.
Claims (4)
1. one kind is the method for mask alignment growth quantum point with silicon dioxide, it is characterized in that this method comprises following preparation process:
Step 1: select a substrate, at this steam coating silicon dioxide layer above substrate;
Step 2: be coated with one deck photoresist on silicon dioxide layer, electron beam exposure carves required graphic structure on photoresist;
Step 3: sample is carried out dry etching, required graphic structure is transferred to the surface of silicon dioxide layer;
Step 4: sample is removed photoresist handle and clean, described sample is removed photoresist and clean, be meant and adopt the liquid that removes photoresist to remove after the photoresist of sample surfaces, in the organic solvent that boils, remove organic substance and impurity in the following order, and with this process circulation 2 times, comprising: benzinum 2-3 minute, absolute ethyl alcohol 2-3 minute, acetone 2-3 minute, trichloroethylene 8 minutes-2 times, acetone 2-3 minute, absolute ethyl alcohol 2-3 minute, carry out several again all over the high purity deionized water flushing;
Step 5: the sample of handling well is put into growth room's growth GaAs material, described sample is put into growth room growth GaAs material, it is to adopt the solid-state molecular beam epitaxy at high temperature to grow, and growth temperature is 620 ℃, the speed of growth is 0.09 μ m/h, and As presses and remains on 4 * 10
-6Pa, growth thickness are 30nm;
Step 6: the sample after will growing adopts the hydrofluoric acid solution corrosion, removes the remaining silica layer.
2. described by claim 1 is the method for mask alignment growth quantum point with silicon dioxide, it is characterized in that, the material of wherein said substrate is GaAs.
3. described by claim 1 is the method for mask alignment growth quantum point with silicon dioxide, it is characterized in that, wherein step 1 described on substrate the thickness of the silicon dioxide layer of evaporation be 50nm.
4. described by claim 1 is the method for mask alignment growth quantum point with silicon dioxide, it is characterized in that, wherein the figure diameter that carves of the described electron beam exposure of step 2 is less than 100nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100998639A CN100565802C (en) | 2007-05-31 | 2007-05-31 | With silicon dioxide is the method for mask alignment growth quantum point |
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| CNB2007100998639A CN100565802C (en) | 2007-05-31 | 2007-05-31 | With silicon dioxide is the method for mask alignment growth quantum point |
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| CN101315882A CN101315882A (en) | 2008-12-03 |
| CN100565802C true CN100565802C (en) | 2009-12-02 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101626143B (en) * | 2009-04-10 | 2010-08-25 | 长春理工大学 | Epitaxial growth design and method for realizing high-efficiency 1.5mu m communication band laser structure by adopting cylindrical InGaSb quantum dots |
| CN101830430B (en) * | 2010-05-24 | 2013-03-27 | 山东大学 | Manufacture method of large-area highly uniform sequential quantum dot array |
| CN103972330B (en) * | 2014-05-23 | 2016-01-20 | 浙江理工大学 | A kind of preparation method of CdS quantum dot photoelectric detection unit |
| CN104599948B (en) * | 2014-12-24 | 2017-08-22 | 上海集成电路研发中心有限公司 | The manufacture method of quantum dot |
| CN104485275A (en) * | 2014-12-30 | 2015-04-01 | 长春理工大学 | Inverted triangular pyramid substrate manufacturing method used for positioning epitaxial growth of quantum dots |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1449510A (en) * | 2000-08-31 | 2003-10-15 | 尤尼瑟驰有限公司 | Fabrication of nanoelectronic circuits |
| US6914256B2 (en) * | 2001-06-25 | 2005-07-05 | North Carolina State University | Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1449510A (en) * | 2000-08-31 | 2003-10-15 | 尤尼瑟驰有限公司 | Fabrication of nanoelectronic circuits |
| US6914256B2 (en) * | 2001-06-25 | 2005-07-05 | North Carolina State University | Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein |
| US20050156180A1 (en) * | 2001-06-25 | 2005-07-21 | Zhibo Zhang | Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein |
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