CN103968944B - A kind of method of silicon array detector subsection integral - Google Patents
A kind of method of silicon array detector subsection integral Download PDFInfo
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- CN103968944B CN103968944B CN201410187097.1A CN201410187097A CN103968944B CN 103968944 B CN103968944 B CN 103968944B CN 201410187097 A CN201410187097 A CN 201410187097A CN 103968944 B CN103968944 B CN 103968944B
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Abstract
The present invention proposes a kind of method of silicon array detector subsection integral, by the Software for Design of programmable logic array, changes driving pulse sequential, thus regulates the time of integration of each section pixel.The present invention solves owing to the incident light of varying strength is radiated on the diverse location of silicon array detector, the problem that some pixel output signal of causing is less, improves the signal to noise ratio of output signal.Sectional integration method is set about in terms of Software for Design, simple, low cost, reliability is high, it is to avoid complicated hardware design.
Description
Technical field
The present invention relates to technical field of photoelectric detection, it is provided that a kind of method of silicon array detector subsection integral.
Background technology
Silicon array detector is a kind of self-scanning photodiode aiming at multi-channel spectral imaging detection and designing
Array device.When from imageable target and when the incident illumination of optical system is on silicon array detector,
Under the control of clock pulses and initial pulse, the charge signal that detector produces reads from output line.
The output charge of silicon array detector is equal to illumination and the time of integration of incident light and taking advantage of of spectral sensitivity
Long-pending.It is referred to as the time of integration, this section corresponding to the time interval between adjacent twice read output signal of same pixel
Time is that pixel produces photoelectronic integration time under incident light irradiates.When the incident light of varying strength irradiates
Time on the diverse location of detector, the signal power of each pixel output is different.At illumination and spectrum sensitivity
Degree one timing, output charge was directly proportional to the time of integration, when whole pixels use the same time of integration, as
Really the incident optical signal of some pixel of detector is more weak, then the charge signal of this pixel output is less.Otherwise,
Output signal may be saturated.
Summary of the invention
Present invention solves the technical problem that the function being to overcome existing hardware is not enough, it is provided that a kind of by changing
The method of the time of integration changes the size of output charge signal, improves the measurement scope of system, silicon array
The method of detector subsection integral.
The technical solution of the present invention is described as follows:
A kind of method of silicon array detector subsection integral, comprises the following steps:
Step i: at the pin of silicon array detectorUpper applying driving pulse sequence N1；
Step ii: driving pulse sequence N1After end, again send pulse train N1, measure pixel output signal
Voltage and noise voltage, calculate signal to noise ratioAccording to the specific requirement of user, sentenced by signal to noise ratio
Whether disconnected pixel output signal is weak signal；
Step iii: when signal is weak signal, and assume control this pixel be X pulse, silicon array visit
Survey and on device pin, apply driving pulse sequence N2；Described driving pulse sequence N2It is at X-1 pulse and X arteries and veins
The Δ t time of integration is increased so that the signal of X to n-th pixel output strengthens between punching；
Step iv: driving pulse sequence N2After end, re-enter driving pulse sequence N1；
Step v: circulation performs the mistake that step iii, step iv, repeated acquisition data and silicon array detector reset
Journey.
In technique scheme, in step iii, the Δ t time of integration of increase meets:
Wherein, QsatSaturated charge for pixel；QnoiseNoise charge for pixel；T is the time of integration of pixel.
Beneficial effects of the present invention:
The method of the silicon array detector subsection integral of the present invention is according to the light intensity being incident on different section pixel
Difference that is weak and that respond, correspondingly regulates the time of integration of pixel so that the pixel receiving low light signals is defeated
The charge signal gone out strengthens, and improves signal to noise ratio.
The method of the silicon array detector subsection integral of the present invention designs from software aspects, simple, cost
Low, reliability is high, it is to avoid the somewhat complex design of hardware.
Accompanying drawing explanation
Accompanying drawing 1 is the schematic diagram of silicon array detector.It includes photodiode array, for read output signal
Switch sections and the shift register of addressing thereof.Silicon array detector uses charge integration method read output signal.By
The electric charge that photodiode produces is stored in the corresponding junction capacity of diode array, input clock pulse
And initial pulseSequentially turning on corresponding address selection switch, the signal in pixel is read.When all pixels
Signal all read after, outputPulse signal.
Accompanying drawing 2 is in the normal mode of operation, diphasic clock pulseInitial pulseWith end pulseAnd the sequential chart of output signal.
Accompanying drawing 3 is under the mode of operation of subsection integral, diphasic clock pulseInitial pulseAnd knot
Beam pulseAnd the sequential chart of output signal.It is by driving pulse sequence N1With driving pulse sequence N2Hand over
Constitute for circulation.Pulse train N1Being the working pulse under normal mode, the time of integration of each pixel is t.
In pulse train N2In, X-1 and the X clock pulsesBetween extend time Δ t.At same frame
In, before extending time interval, the time of integration of pixel is t.Through the time interval extended, the integration of pixel
Time is t+ Δ t.
Accompanying drawing 4 is the theory diagram of detector drive circuit.Programmable logic array producesPulse
Signal, controls detector and is exported in analog circuit by charge signal.When last pixel signal is read
After, outputEnd of scan signal is to programmable logic array.
Detailed description of the invention
The invention thought of the present invention is:
So-called sectional integration method, is power and the sound thereof of optical signal according to being incident on different section pixel
The difference answered, by setting the time interval between driving pulse, suitably regulates different section pixel
The method of the time of integration.
The method of the silicon array detector subsection integral of the present invention, changes clock pulses by Software for Design Time interval so that each section pixel produces different time of integration, it is not necessary to change silicon array detector
External circuit design.
The method of the silicon array detector subsection integral of the present invention, according to the size of subsection integral time in a frame
Sequentially, driving pulse sequence N is utilized1With driving pulse sequence N2The method of alternating action, it is possible in making a frame
The time of integration of silicon array detector becomes larger, and has considerable flexibility.
The equivalent circuit diagram of silicon array detector is as shown in Figure 1.Input pulse sequence figure as shown in Figure 2,
At initial pulseWith the clock pulses inputted by certain frequencyUnder control, the charge signal of pixel is successively
Read.After the signal of last pixel is read, detector output end of scan signal
The present invention realizes the subsection integral of silicon array detector, pulse sequence by the design of driving pulse sequence
Row 1 coordinate with pulse train 2, so that the time of integration of pixel 1～N increases, i.e. successively
t1≦t2≦t3≦t4…≦tN。
User's requirement to different measuring Signal-to-Noise is met by subsection integral, because
Light exposure=illumination (W/cm2) the * time of integration (s)
Output charge=light exposure (W*s/cm2) * sensitivity (cm2*C/J)
If increasing Δ t the time of integration of pixel, then
Output charge=illumination (W/cm2) * (t+ Δ t) (s) * sensitivity (cm2*C/J)。
In same frame time, there is N number of clock pulsesUnder normal mode, the time of integration of pixel is t,
As shown in Figure 3.Assume that the signal to noise ratio of the output signal of X pixel (measures signal different to noise less than 1
Also more different than requiring), increase the time interval between the X clock pulses with previous adjacent clock pulses
Δ t, then from the 1st to the X-1 clock pulsesWith the clock pulses corresponding to previous frameTime
Between be spaced constant, the time of integration is still t, but all increases to the time of integration that n-th pixel is corresponding from X
Δt.In like manner, the individual pixel between n-th of X can also increase the time of integration so that amassing of pixel 1～N
It is gradually increased between timesharing.
Due to output signal charge QoutCan not be more than the saturated charge Q of pixelsat, cause pixel electric charge to overflow,
I.e. Qout＜ Qsat, output signal charge Q simultaneouslyoutCan not be less than noise charge Q of pixelnoise, i.e. Qnoise＜
Qout, otherwise signal can be flooded by noise, so
Qnoise＜ Qout＜ Qsat, i.e.
Qnoise＜ illumination * (t+ Δ t) * sensitivity ＜ Qsat
Below by embodiment, the invention will be further described, but should not limit the protection model of the present invention with this
Enclose.
The silicon detector RL1210LGQ-711 of RETICON company, effective pixel 1024, outside input
Clock pulse signal is produced by programmable logic array, and dc source is detector offer ± 15V, 5V electricity
Pressure, as shown in Figure 4.
RL1210LGQ-711 detector realizes the reading of sectional integration method and controls sequential, as shown in Figure 3:
1, at detector pinUpper applying driving pulse sequence N1, this step is used for realizing silicon battle array
The initialization of row detector, the data of reading are invalid data.
2, driving pulse sequence N1After end, it will again send pulse train N1, measure pixel output signal
Voltage and noise voltage, calculate signal to noise ratioIf signal to noise ratio is less than the specific requirement value of user,
Then the signal of this pixel output is weak signal.
3, assume this pixel of control is X pulse, applies driving pulse sequence N on detector pin2,
Between X-1 pulse and X pulse, i.e. increase the Δ t time of integration so that X to n-th pixel output
Signal strengthens, if the signal of some pixel output after X pixel is the most weak, in like manner can increase picture
The time of integration of unit so that the signal of pixel output strengthens.And the time of integration increased has to comply withThe data that this step reads are having under subsection integral method
Effect data.
4, driving pulse sequence N2After end, re-enter driving pulse sequence N1.This step is used for realizing silicon
The reset of detector array, the data of reading are invalid data.
5, circulation perform step 3,4, the process that repeated acquisition data and detector reset.
Obviously, above-described embodiment is only for clearly demonstrating example, and not to embodiment
Limit.For those of ordinary skill in the field, can also be made it on the basis of the above description
The change of its multi-form or variation.Here without also cannot all of embodiment be given exhaustive.And by
What this was extended out obviously changes or changes among still in the protection domain of the invention.
Claims (1)
1. the method for a silicon array detector subsection integral, it is characterised in that comprise the following steps:
Step i: at the pin of silicon array detectorUpper applying driving pulse sequence N1；
Step ii: driving pulse sequence N1After end, again send pulse train N1, measure pixel output signal
Voltage and the voltage of noise, calculate signal to noise ratioIf signal to noise ratio is less than the specific requirement of user
Value, then the signal of this pixel output is weak signal；
Step iii: when signal is weak signal, and assume control this pixel be X pulse, silicon array visit
Survey and on device pin, apply driving pulse sequence N2；Described driving pulse sequence N2It is at X-1 pulse and X arteries and veins
The Δ t time of integration is increased so that the signal of X to n-th pixel output strengthens between punching；
Step iv: driving pulse sequence N2After end, re-enter driving pulse sequence N1；
Step v: circulation performs the mistake that step iii, step iv, repeated acquisition data and silicon array detector reset
Journey；
In step iii, the Δ t time of integration of increase meets:
Wherein, QsatSaturated charge for pixel；QnoiseNoise charge for pixel；T is the time of integration of pixel.
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| US7697134B1 (en) * | 2005-11-04 | 2010-04-13 | Sandia Corporation | Correlation spectrometer |
| CN101825763A (en) * | 2009-12-31 | 2010-09-08 | 福建福光数码科技有限公司 | High resolution day and night multipoint zoom lens |
| CN101975611A (en) * | 2010-09-17 | 2011-02-16 | 中国科学院上海技术物理研究所 | Double-slit convex grating imaging spectrometer |
| CN201965295U (en) * | 2010-12-07 | 2011-09-07 | 桂林电子科技大学 | Non-CaF2 medium flat filed apochromatism metallographical microscope objective |
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| JP5438926B2 (en) * | 2008-07-16 | 2014-03-12 | オリンパス株式会社 | Spectrometer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7697134B1 (en) * | 2005-11-04 | 2010-04-13 | Sandia Corporation | Correlation spectrometer |
| CN101825763A (en) * | 2009-12-31 | 2010-09-08 | 福建福光数码科技有限公司 | High resolution day and night multipoint zoom lens |
| CN101975611A (en) * | 2010-09-17 | 2011-02-16 | 中国科学院上海技术物理研究所 | Double-slit convex grating imaging spectrometer |
| CN201965295U (en) * | 2010-12-07 | 2011-09-07 | 桂林电子科技大学 | Non-CaF2 medium flat filed apochromatism metallographical microscope objective |
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