CN103965103A - Organic semiconductor material, preparation method and electroluminescent device - Google Patents

Organic semiconductor material, preparation method and electroluminescent device Download PDF

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Publication number
CN103965103A
CN103965103A CN201310038639.4A CN201310038639A CN103965103A CN 103965103 A CN103965103 A CN 103965103A CN 201310038639 A CN201310038639 A CN 201310038639A CN 103965103 A CN103965103 A CN 103965103A
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China
Prior art keywords
semiconductor material
organic semiconductor
preparation
organic
palladium
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CN201310038639.4A
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Inventor
周明杰
王平
张振华
黄辉
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Priority to CN201310038639.4A priority Critical patent/CN103965103A/en
Publication of CN103965103A publication Critical patent/CN103965103A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D215/00—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems
    • C07D215/02—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen atoms or carbon atoms directly attached to the ring nitrogen atom
    • C07D215/16—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen atoms or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D215/20—Oxygen atoms
    • C07D215/22—Oxygen atoms attached in position 2 or 4
    • C07D215/227—Oxygen atoms attached in position 2 or 4 only one oxygen atom which is attached in position 2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Abstract

The present invention provides an organic semiconductor material having the following chemical formula. According to the present invention, the organic semiconductor material has bipolar carrier transporting capacity so as to achieve hole and electron transporting balance in the luminescence layer, and further has a high triplet energy level and excellent thermal stability, such that the condition that energy is returned to the main body material during the luminescence process can be effectively prevented so as to substantially increase the luminescence efficiency. The present invention further provides a preparation method for the organic semiconductor material, and an electroluminescent device containing the organic semiconductor material.

Description

A kind of organic semiconductor material, preparation method and electroluminescent device
Technical field
The invention belongs to field of photovoltaic materials, be specifically related to a kind of organic semiconductor material, preparation method and electroluminescent device.
Background technology
Organic electroluminescence device has that driving voltage is low, fast response time, angular field of view are wide and can be finely tuned and be changed luminescent properties and make rich color by chemical structure, easily realize the advantages such as resolving power is high, lightweight, large-area flat-plate demonstration, be described as " 21 century flat panel display ", become the focus of the subjects such as material, information, physics and flat pannel display area research.Following commercialization Organic Light Emitting Diode efficiently will contain organo-metallic phosphorescent substance possibly, because they can all catch singlet and triplet excitons, thereby realize 100% internal quantum efficiency.But, because the excited state exciton life-span of transition metal complex is relatively long, cause unwanted triplet state-triplet state (T 1-T 1) cancellation in device real work.In order to overcome this problem, investigators are often doped to triplet state shiner in organic main body material.
In recent years, green and red phosphorescent OLED device exhibits goes out gratifying electroluminescent efficiency.And blue phosphorescent device is little efficiently, major cause is to lack to have good carrier transmission performance and higher triplet (E simultaneously t) material of main part.
Summary of the invention
For addressing the above problem, the invention provides a kind of organic semiconductor material, this organic semiconductor material has bipolarity carrier transport ability, makes hole and electric transmission balance in luminescent layer; Also there is higher triplet and good thermal stability simultaneously, effectively prevent that in luminescence process, energy returns to material of main part, greatly improved luminous efficiency, organic semiconductor material of the present invention provides new selectable kind for bipolarity green glow phosphorescent light body material.The present invention also provides the preparation method of this organic semiconductor material, and the electroluminescent device that comprises this organic semiconductor material.
On the one hand, the invention provides a kind of organic semiconductor material, the chemical formula of described organic semiconductor material is as follows:
Second aspect, the invention provides a kind of preparation method of organic semiconductor material, comprises the steps:
Compd A is provided: and compd B: under inert atmosphere, be that 1:1～1.2 are added in the organic solvent that contains catalyzer and alkaline solution and at 70～130 DEG C, carry out Suzuki coupling reaction 12～48 hours by compd A and compd B according to mol ratio, it is as follows that stopped reaction obtains the chemical formula of organic semiconductor material:
Preferably, the preparation method of described organic semiconductor material further comprises post-processing step, described post-processing step is specially: stopped reaction is obtained to organic semiconductor material methylene dichloride and extract, after merging organic phase, adopt anhydrous magnesium sulfate drying, and the mixed solvent that adopts sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, vacuum-drying obtain target product.
Preferably, described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
Preferably, described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution, and the solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
Preferably, described organic palladium is bi triphenyl phosphine dichloride palladium, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture.Wherein, the molar weight of phosphine part is 4～8 times of organic palladium molar weight.
Preferably, the mol ratio of described organic palladium and described compd A is 1:20 ~ 1:100.
The third aspect, the invention provides a kind of electroluminescent device, comprise the substrate with anode, luminescent layer and the cathode layer that stack gradually, described luminescent layer is the mixture of material of main part and guest materials, wherein material of main part organic semiconductor material as follows: guest materials is that three (2-phenylpyridines) close iridium, two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl close iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
Preferably, the mass percent of described material of main part and described guest materials is 5%～25%.
Preferably, anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
The invention provides a kind of organic semiconductor material, preparation method and electroluminescent device, there is following beneficial effect: there is bipolarity carrier transport ability, make hole and electric transmission balance in luminescent layer; Also have higher triplet and good thermal stability simultaneously, effectively prevent that in luminescence process, energy returns to material of main part, greatly improved luminous efficiency, synthetic method is simple, can be used for green glow phosphorescent light body material.
Brief description of the drawings
The structural representation of Fig. 1 organic electroluminescence device that to be organic semiconductor material to make in embodiment 1 make as material of main part;
Fig. 2 is the thermogravimetic analysis (TGA) figure of the organic semiconductor material that makes in embodiment 1.
Embodiment
In order to understand better the content of patent of the present invention, further illustrate technology case of the present invention below by concrete example and legend, specifically comprise material preparation and device preparation, but these embodiments do not limit the present invention, wherein monomer A, monomers B are all bought and are obtained from the market.
The invention provides a kind of organic semiconductor material, the chemical formula of described organic semiconductor material is as follows:
This organic semiconductor material has bipolarity carrier transport ability, makes hole and electric transmission balance in luminescent layer; Also have higher triplet and good thermal stability simultaneously, effectively prevent that in luminescence process, energy returns to material of main part, greatly improved luminous efficiency, therefore organic semiconductor material of the present invention has bipolarity green glow phosphorescent light body material.
The preparation method who the invention provides a kind of organic semiconductor material, comprises the steps:
Compd A is provided: and compd B: under inert atmosphere, be that 1:1～1.2 are added in the organic solvent that contains catalyzer and alkaline solution and at 70～130 DEG C, carry out Suzuki coupling reaction 12～48 hours by compd A and compd B according to mol ratio, it is as follows that stopped reaction obtains the chemical formula of organic semiconductor material:
In specific embodiment, the preparation method of described organic semiconductor material further comprises post-processing step, described post-processing step is specially: stopped reaction is obtained to organic semiconductor material methylene dichloride and extract, after merging organic phase, adopt anhydrous magnesium sulfate drying, and the mixed solvent that adopts sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, vacuum-drying obtain target product.
In specific embodiment, the volume ratio of sherwood oil and ethyl acetate is 10:1～8:1;
In specific embodiment, vacuum drying condition is to be dried 12～24 hours at 50～70 DEG C;
In specific embodiment, described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
In specific embodiment, described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution, and the solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
In specific embodiment, described organic palladium is bi triphenyl phosphine dichloride palladium, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture.Wherein, the molar weight of phosphine part is 4～8 times of organic palladium molar weight.
In specific embodiment, described organic palladium and the mol ratio of described compd A are 1:20 ~ 1:100.
Adopted better simply synthetic route, thereby reduced technical process, starting material are cheap and easy to get, and manufacturing cost is reduced.
The invention provides a kind of electroluminescent device, comprise the substrate with anode, luminescent layer and the cathode layer that stack gradually, described luminescent layer is the mixture of material of main part and guest materials, wherein material of main part organic semiconductor material as follows: guest materials is that three (2-phenylpyridines) close iridium, two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl close iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
In specific embodiment, the mass percent of described guest materials and described material of main part is 5%～25%.
In specific embodiment, anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
Organic luminescent device transmitting green light based on this material, and luminous efficiency is high.
Embodiment 1:
1-methyl-3-[4-(diphenylamine) phenyl] the preparation process preparation process of-4-phenylquinoline-2 (1H)-one is as follows:
Under argon shield, by 4-tetramethyl ethylene ketone boric acid ester triphenylamine (74mg, 0.2mmol), the bromo-4-of 1-methyl-3-phenylquinoline-2 (1H)-one (63mg, 0.2mmol) add in the flask that fills 10ml toluene solvant, after fully dissolving, salt of wormwood (2mL, 2mol/L) solution is joined in flask, vacuumize deoxygenation and be filled with argon gas, then add bi triphenyl phosphine dichloride palladium (5.6mg, 0.008mmol); Flask is heated to 100 DEG C and carries out Suzuki coupling reaction 24h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, after anhydrous magnesium sulfate drying, be spin-dried for, obtain this 1-methyl-3-[4-(diphenylamine) phenyl]-4-phenylquinoline-2 (1H)-one organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is that 10:1 is that leacheate separates and obtains white crystal through silica gel column chromatography.The last lower 50 DEG C of dry 24h of vacuum.Productive rate is 84%.
Test data of experiment: mass spectrum: m/z478.6(M ++ 1);
Ultimate analysis (%) C 34h 26n 2o: theoretical value C85.33, H5.48, N5.85, O3.34; Measured value C85.34, H5.50, N5.82, O3.32.
Be the thermogravimetic analysis (TGA) figure of the organic semiconductor material prepared of the present embodiment referring to accompanying drawing 1, thermogravimetric curve (TGA) test is carried out on TA SDT2960instruments, and under nitrogen gas stream protection, heat-up rate is 10K/min.5% thermal weight loss temperature is 350 DEG C as seen from the figure.
By test for low temperature phosphorescence spectrum, instrument is FS modular fluorometer/pectrophosphorimeter, to investigate its triplet state emission characteristic.Under the liquid nitrogen of 77K, bill of material reveals very strong green glow phosphorescent emissions, and emission peak is at 444nm, and corresponding triplet energy state is 2.79eV, the triplet energy state (2.62eV) that is much higher than phosphor material FIrpic, test data result shows that our material can be used as blue phosphorescent material of main part.
Embodiment 2:
1-methyl-3-[4-(diphenylamine) phenyl] the preparation process preparation process of-4-phenylquinoline-2 (1H)-one is as follows:
Under nitrogen and the protection of argon gas gas mixture; by 4-tetramethyl ethylene ketone boric acid ester triphenylamine (112mg; 0.3mmol), the bromo-4-of 1-methyl-3-phenylquinoline-2 (1H)-one (103mg; 0.33mmol) add in the two-mouth bottle of 50mL specification with 15mL tetrahydrofuran (THF); after fully dissolving, pass into after the about 20min of gas mixture air-discharging of nitrogen and argon gas; then by tetra-triphenylphosphine palladium (4mg; 0.003mmol) add wherein; after fully dissolving, add again sodium bicarbonate (3mL, 2mol/L) solution.After the about 10min of gas mixture air-discharging of fully logical nitrogen and argon gas, two-mouth bottle is joined to 70 DEG C and carry out Suzuki coupling reaction 48h again.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, after anhydrous magnesium sulfate drying, be spin-dried for, obtain this 1-methyl-3-[4-(diphenylamine) phenyl]-4-phenylquinoline-2 (1H)-one organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is that 10:1 is that leacheate separates and obtains white crystal through silica gel column chromatography.The last lower 50 DEG C of dry 24h of vacuum.Productive rate is 80%.
Embodiment 3:
1-methyl-3-[4-(diphenylamine) phenyl] the preparation process preparation process of-4-phenylquinoline-2 (1H)-one is as follows:
Under nitrogen protection, by 4-tetramethyl ethylene ketone boric acid ester triphenylamine (112mg, 0.3mmol), the bromo-4-of 1-methyl-3-phenylquinoline-2 (1H)-one (113mg, 0.36mmol), palladium (3.5mg, 0.015mmol) He three (o-methoxyphenyl) phosphine (21mg, 0.06mmol) join the N that fills 12mL, in the flask of dinethylformamide, after fully dissolving, add salt of wormwood (3mL, 2mol/L) solution leads to after the about 30min of nitrogen purge gas subsequently in flask; Flask is heated to 130 DEG C and carries out Suzuki coupling reaction 12h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, after anhydrous magnesium sulfate drying, be spin-dried for, obtain this 1-methyl-3-[4-(diphenylamine) phenyl]-4-phenylquinoline-2 (1H)-one organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is that 10:1 is that leacheate separates and obtains white crystal through silica gel column chromatography.The last lower 50 DEG C of dry 24h of vacuum.Productive rate is 86%.
Embodiment 4:
1-methyl-3-[4-(diphenylamine) phenyl] the preparation process preparation process of-4-phenylquinoline-2 (1H)-one is as follows:
Under nitrogen protection; by 4-tetramethyl ethylene ketone boric acid ester triphenylamine (112mg; 0.3mmol) with the bromo-4-of 1-methyl-3-phenylquinoline-2 (1H)-one (113mg; 0.36mmol), three or two argon benzyl acetone two palladium (9mg; 0.009mmol) with 2-dicyclohexyl phosphine-2 '; 6 '-dimethoxy-biphenyl (29mg; 0.072mmol) join the N that fills 12mL; in the flask of dinethylformamide; after fully dissolving, add sodium carbonate (3mL, 2mol/L) solution.In flask, lead to after the about 30min of nitrogen purge gas subsequently; Flask is heated to 120 DEG C and carries out Suzuki coupling reaction 36h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, after anhydrous magnesium sulfate drying, be spin-dried for, obtain this 1-methyl-3-[4-(diphenylamine) phenyl]-4-phenylquinoline-2 (1H)-one organic semiconductor material, then adopt sherwood oil: ethyl acetate (10:1) is that leacheate separates and obtains white crystal through silica gel column chromatography.The last lower 50 DEG C of dry 24h of vacuum.Productive rate is 79%.
Application Example
Organic electroluminescence device 300, as Fig. 1, it comprises substrate 301 to its structure, anode 302, hole injection layer 303, hole transmission layer 304, luminescent layer 305, electron transfer layer 306, electronic injection buffer layer 307, negative electrode 308.
In the present embodiment, the material of substrate 301 is glass, vacuum plating anode 302 successively in substrate 301, hole injection layer 303, hole transmission layer 304, luminescent layer 305, electron transfer layer 306, electronic injection buffer layer 307, negative electrode 308, it is the tin indium oxide of 10 ~ 20 Ω/ that anode 302 adopts square resistance, thickness is 150nm, hole injection layer 303 adopts poly-(3, 4-ethene dioxythiophene)-polystyrolsulfon acid, thickness is 30nm, hole transmission layer 304 adopts N, N '-phenylbenzene-N, N '-(1-naphthyl)-1, 1 '-biphenyl-4, 4 '-diamines, thickness is 50nm, compound 1-methyl-3-[4-(diphenylamine) phenyl that luminescent layer 305 main body luminescent materials adopt the invention process 1 to prepare]-4-phenylquinoline-2 (1H)-one, and doping mass percent closes iridium (III) as 20% object luminescent material three (2-phenylpyridine) taking material of main part as benchmark, luminescent layer 305 thickness are 20nm, electron transfer layer 306 adopts Alq 3, three (oxine) aluminium, thickness is 30nm, and electronic injection buffer layer 307 adopts lithium fluoride, and thickness is 1.5nm, and negative electrode 308 adopts metallic aluminium, and thickness is 150nm.
Organic layer and metal level all adopt thermal evaporation process deposits to complete, and vacuum tightness is 10 -3～10 -5pa, the thickness of film adopts film thickness monitoring instrument to monitor, and except guest materials, the vaporator rate of all organic materialss is / second, the vaporator rate of lithium fluoride is / second, the vaporator rate of metallic aluminium is / second.
This electroluminescent device has higher luminous efficiency, can be widely used in the luminous field such as blueness or white.Electric current-the brightness-voltage characteristic of device is that all measurements that completed by the Keithley source measuring system (Keithley2400Sourcemeter, Keithley2000Cuirrentmeter) with correction silicon photoelectric diode all complete in atmosphere at room temperature.Result shows: the trigger voltage of device is 4.3V, at 1000cd/m 2brightness under, luminous efficiency is 13.0lm/W.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.

Claims (10)

1. an organic semiconductor material, is characterized in that, the chemical formula of described organic semiconductor material is as follows:
2. a preparation method for organic semiconductor material, is characterized in that, comprises the steps:
Compd A is provided: and compd B: under inert atmosphere, be that 1:1～1.2 are added in the organic solvent that contains catalyzer and alkaline solution and at 70～130 DEG C, carry out Suzuki coupling reaction 12～48 hours by compd A and compd B according to mol ratio, described catalyzer is the mixture of organic palladium or organic palladium and organophosphorus ligand, and it is as follows that stopped reaction obtains the chemical formula of organic semiconductor material:
3. preparation method as claimed in claim 2, it is characterized in that, the preparation method of described organic semiconductor material further comprises post-processing step, described post-processing step is specially: stopped reaction is obtained to organic semiconductor material methylene dichloride and extract, after merging organic phase, adopt anhydrous magnesium sulfate drying, and the mixed solvent that adopts sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, vacuum-drying obtain target product.
4. preparation method as claimed in claim 2, is characterized in that, described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
5. preparation method as claimed in claim 2, is characterized in that, described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution, and the solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
6. preparation method as claimed in claim 2, it is characterized in that, described organic palladium is bi triphenyl phosphine dichloride palladium, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture.Wherein, the molar weight of phosphine part is 4～8 times of organic palladium molar weight.
7. preparation method as claimed in claim 2, is characterized in that, the mol ratio of described organic palladium and described compd A is 1:20 ~ 1:100.
8. an electroluminescent device, is characterized in that, comprises the substrate with anode, luminescent layer and the cathode layer that stack gradually, and described luminescent layer is the mixture of material of main part and guest materials, wherein material of main part organic semiconductor material as follows:
guest materials is that three (2-phenylpyridines) close iridium, two (4,6-difluorophenyl pyridine-N, C2) pyridine formyl close iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
9. electroluminescent device as claimed in claim 8, is characterized in that, the mass percent of described material of main part and described guest materials is 5%～25%.
10. electroluminescent device as claimed in claim 8, is characterized in that, described anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
CN201310038639.4A 2013-01-31 2013-01-31 Organic semiconductor material, preparation method and electroluminescent device Pending CN103965103A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03162483A (en) * 1989-11-20 1991-07-12 Pioneer Electron Corp Electroluminescent element
EP0797376A2 (en) * 1996-03-19 1997-09-24 Bayer Ag Electroluminescent structure using blend systems
JP2001131152A (en) * 1999-11-02 2001-05-15 Toppan Printing Co Ltd Quinolone derivative and organic el element using the same
CN102070522A (en) * 2009-11-19 2011-05-25 中国科学院理化技术研究所 Quinolone derivatives and application thereof in organic light-emitting devices (OLEDs)
CN102260492A (en) * 2010-08-11 2011-11-30 中国科学院理化技术研究所 Use of quinolone derivatives as organic light emitting diode (OLED) emitting materials in organic electroluminescent device
CN102683616A (en) * 2012-05-22 2012-09-19 太原理工大学 Application of ciprofloxacin as luminescent material in organic electroluminescent device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03162483A (en) * 1989-11-20 1991-07-12 Pioneer Electron Corp Electroluminescent element
EP0797376A2 (en) * 1996-03-19 1997-09-24 Bayer Ag Electroluminescent structure using blend systems
JP2001131152A (en) * 1999-11-02 2001-05-15 Toppan Printing Co Ltd Quinolone derivative and organic el element using the same
CN102070522A (en) * 2009-11-19 2011-05-25 中国科学院理化技术研究所 Quinolone derivatives and application thereof in organic light-emitting devices (OLEDs)
CN102260492A (en) * 2010-08-11 2011-11-30 中国科学院理化技术研究所 Use of quinolone derivatives as organic light emitting diode (OLED) emitting materials in organic electroluminescent device
CN102683616A (en) * 2012-05-22 2012-09-19 太原理工大学 Application of ciprofloxacin as luminescent material in organic electroluminescent device

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Application publication date: 20140806