CN104211656A - Organic semiconductor material, preparation method, and electroluminescent device - Google Patents

Organic semiconductor material, preparation method, and electroluminescent device Download PDF

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Publication number
CN104211656A
CN104211656A CN201310206826.9A CN201310206826A CN104211656A CN 104211656 A CN104211656 A CN 104211656A CN 201310206826 A CN201310206826 A CN 201310206826A CN 104211656 A CN104211656 A CN 104211656A
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semiconductor material
organic semiconductor
preparation
organic
palladium
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周明杰
张振华
王平
黄辉
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Priority to CN201310206826.9A priority Critical patent/CN104211656A/en
Publication of CN104211656A publication Critical patent/CN104211656A/en
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D271/00—Heterocyclic compounds containing five-membered rings having two nitrogen atoms and one oxygen atom as the only ring hetero atoms
    • C07D271/02—Heterocyclic compounds containing five-membered rings having two nitrogen atoms and one oxygen atom as the only ring hetero atoms not condensed with other rings
    • C07D271/10—1,3,4-Oxadiazoles; Hydrogenated 1,3,4-oxadiazoles
    • C07D271/107—1,3,4-Oxadiazoles; Hydrogenated 1,3,4-oxadiazoles with two aryl or substituted aryl radicals attached in positions 2 and 5
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565—Oxadiazole compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1018—Heterocyclic compounds
    • C09K2211/1025—Heterocyclic compounds characterised by ligands
    • C09K2211/1044—Heterocyclic compounds characterised by ligands containing two nitrogen atoms as heteroatoms
    • C09K2211/1048—Heterocyclic compounds characterised by ligands containing two nitrogen atoms as heteroatoms with oxygen

Abstract

The invention provides an organic semiconductor material. The chemical formula of the organic semiconductor material is represented in the description. The organic semiconductor material has a bipolarity carrier transporting ability, and thus can balance the hole and electronic transportation in the luminescent layer. The organic semiconductor material also has a high triplet state energy level and excellent thermal stability, and can prevent the energy from being fed back to the host material during the illumination process, so the luminescent efficiency is greatly improved. The invention further provides a preparation method of the organic semiconductor material, and an electroluminescent device containing the organic semiconductor material.

Description

A kind of organic semiconductor material, preparation method and electroluminescent device
Technical field
The invention belongs to field of photovoltaic materials, be specifically related to a kind of organic semiconductor material, preparation method and electroluminescent device.
Background technology
Organic electroluminescence device has that driving voltage is low, fast response time, angular field of view are wide and changes luminescent properties by chemical structure fine setting makes rich color, easily realize the advantages such as resolving power is high, lightweight, large-area flat-plate display, be described as " 21 century flat panel display ", become the focus of the subjects such as material, information, physics and flat pannel display area research.Following commercialization Organic Light Emitting Diode efficiently will contain organo-metallic phosphorescent substance possibly, because singlet and triplet excitons can all be caught by they, thus realize the internal quantum efficiency of 100%.But, because the excited state exciton lifetime of transition metal complex is relatively long, cause unwanted triplet state-triplet state (T 1-T 1) cancellation in device real work.In order to overcome this problem, triplet emission thing is often doped in organic host material by investigators.
In recent years, green and red phosphorescent OLED shows gratifying electroluminescent efficiency.And blue phosphorescent device is little efficiently, simultaneously major cause lacks to have good carrier transmission performance and higher triplet (E t) material of main part.
Summary of the invention
For solving the problem, the invention provides a kind of organic semiconductor material, this organic semiconductor material has bipolarity carrier transport ability, makes the hole in luminescent layer and electric transmission balance; Also there is higher triplet and excellent thermal stability simultaneously, effectively prevent energy in luminescence process from returning to material of main part, substantially increase luminous efficiency, organic semiconductor material of the present invention is that bipolarity blue emitting phosphor material of main part provides new selectable kind.Present invention also offers the preparation method of this organic semiconductor material, and comprise the electroluminescent device of this organic semiconductor material.
On the one hand, the invention provides a kind of organic semiconductor material, the chemical formula of described organic semiconductor material is as follows:
Second aspect, the invention provides a kind of preparation method of organic semiconductor material, comprises the steps:
Compd A is provided: and compd B: under an inert atmosphere, be at 70 ~ 130 DEG C, carry out Suzuki coupling reaction 12 ~ 48 hours during 1:1 ~ 1.2 are added into containing catalyzer and alkaline solution organic solvent by compd A and compd B according to mol ratio, described catalyzer is the mixture of organic palladium or organic palladium and organophosphorus ligand, and the chemical formula that stopped reaction obtains organic semiconductor material is as follows:
Preferably, the preparation method of described organic semiconductor material comprises post-processing step further, described post-processing step is specially: stopped reaction is obtained organic semiconductor material methylene dichloride and extract, anhydrous magnesium sulfate drying is adopted after merging organic phase, and adopting the mixed solvent of sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, namely vacuum-drying obtain target product.
Preferably, described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
Preferably, described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution, and the solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
Preferably, described organic palladium is bis-triphenylphosphipalladium palladium dichloride, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture.Wherein, the molar weight of Phosphine ligands is 4 ~ 8 times of organic palladium molar weight.
Preferably, the mol ratio of described organic palladium and described compd A is 1:20 ~ 1:100.
The third aspect, the invention provides a kind of electroluminescent device, comprise the substrate with anode, luminescent layer and the cathode layer that stack gradually, described luminescent layer is the mixture of material of main part and guest materials, the organic semiconductor material that wherein material of main part is as follows: guest materials is two (4,6-difluorophenyl pyridinato-N, C2) pyridinecarboxylic closes iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
Preferably, the mass percent of described material of main part and described guest materials is 5% ~ 25%.
Preferably, anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
The invention provides a kind of organic semiconductor material, preparation method and electroluminescent device, there is following beneficial effect: there is bipolarity carrier transport ability, make the hole in luminescent layer and electric transmission balance; Also have higher triplet and excellent thermal stability, effectively prevent energy in luminescence process from returning to material of main part, substantially increase luminous efficiency, synthetic method is simple, can be used for blue emitting phosphor material of main part simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device obtained for material of main part with organic semiconductor material obtained in embodiment 1;
Fig. 2 is the thermogravimetic analysis (TGA) figure of organic semiconductor material obtained in embodiment 1.
Embodiment
In order to understand the content of patent of the present invention better, technology case of the present invention is further illustrated below by concrete example and legend, specifically comprise material preparation and device preparation, but these embodiments do not limit the present invention, wherein monomer A, monomers B all commercially obtain.
The invention provides a kind of organic semiconductor material, the chemical formula of described organic semiconductor material is as follows:
This organic semiconductor material has bipolarity carrier transport ability, makes the hole in luminescent layer and electric transmission balance; Also have higher triplet and excellent thermal stability, effectively prevent energy in luminescence process from returning to material of main part, substantially increase luminous efficiency, therefore organic semiconductor material of the present invention has bipolarity blue emitting phosphor material of main part simultaneously.
The invention provides a kind of preparation method of organic semiconductor material, comprise the steps:
Compd A is provided: and compd B: under an inert atmosphere, be at 70 ~ 130 DEG C, carry out Suzuki coupling reaction 12 ~ 48 hours during 1:1 ~ 1.2 are added into containing catalyzer and alkaline solution organic solvent by compd A and compd B according to mol ratio, the chemical formula that stopped reaction obtains organic semiconductor material is as follows:
The preparation method of described organic semiconductor material comprises post-processing step further, described post-processing step is specially: stopped reaction is obtained organic semiconductor material methylene dichloride and extract, anhydrous magnesium sulfate drying is adopted after merging organic phase, and adopting the mixed solvent of sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, namely vacuum-drying obtain target product.
The volume ratio of sherwood oil and ethyl acetate is 10:1 ~ 8:1;
Vacuum drying condition is 50 ~ 70 DEG C of dryings 12 ~ 24 hours;
Described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
Described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution,
Solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
Described organic palladium is bis-triphenylphosphipalladium palladium dichloride, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture.Wherein, the molar weight of Phosphine ligands is 4 ~ 8 times of organic palladium molar weight.
The mol ratio of described organic palladium and described compd A is 1:20 ~ 1:100.
Have employed better simply synthetic route, thus reduce technical process, starting material are cheap and easy to get, and manufacturing cost is reduced.
The invention provides a kind of electroluminescent device, comprise the substrate with anode, luminescent layer and the cathode layer that stack gradually, described luminescent layer is the mixture of material of main part and guest materials, the organic semiconductor material that wherein material of main part is as follows: guest materials is two (4,6-difluorophenyl pyridinato-N, C2) pyridinecarboxylic closes iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
The mass percent of described guest materials and described material of main part is 5% ~ 25%.
Anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
Organic luminescent device based on this material launches blue light, and luminous efficiency is high.
Embodiment 1:
The preparation process preparation process of 2,2'-bis-(5-(4-tert-butyl phenyl)-1,3,4-oxadiazole-2-base) phenylbenzene is as follows:
Under argon shield, by 2-(4-bromophenyl)-5-(4-tert-butyl phenyl)-1,3,4-oxadiazole (71mg, 0.2mmol), 2-(4-tert-butyl phenyl)-5-(4-tetramethyl ethylene ketone boric acid ester phenyl)-1,3,4-oxadiazole (81mg, 0.2mmol) add in the flask filling 10ml toluene solvant, after abundant dissolving, salt of wormwood (2mL, 2mol/L) solution is joined in flask, vacuumize deoxygenation and be filled with argon gas, then bis-triphenylphosphipalladium palladium dichloride (5.6mg, 0.008mmol) is added; Flask is heated to 100 DEG C and carries out Suzuki coupling reaction 24h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, be spin-dried for after anhydrous magnesium sulfate drying, obtain this 2,2'-bis-(5-(4-tert-butyl phenyl)-1,3,4-oxadiazole-2-base) phenylbenzene organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is 10:1 is that leacheate obtains white crystal through silica gel column chromatography separation.The lower 50 DEG C of dry 24h of last vacuum.Productive rate is 87%.
Test data of experiment: mass spectrum: m/z554.3(M ++ 1);
Ultimate analysis (%) C 36h 34n 4o 2theoretical value: C77.95, H6.18, N10.10, O5.77; Measured value: C77.99, H6.12, N10.17, O5.65..
See the thermogravimetic analysis (TGA) figure that accompanying drawing 2 is organic semiconductor material prepared by the present embodiment, thermogravimetric curve (TGA) test is carried out on TA SDT2960instruments, and under nitrogen gas stream protection, heat-up rate is 10K/min.The thermal weight loss temperature of 5% is 383 DEG C as seen from the figure.
By test for low temperature phosphorescence spectrum, instrument is FS modular fluorometer/pectrophosphorimeter, to investigate its triplet emission characteristic.Under the liquid nitrogen of 77K, bill of material reveals very strong blue emitting phosphor to be launched, and emission peak is at 450nm, and corresponding triplet energy state is 2.76eV, be much higher than the triplet energy state (2.62eV) of phosphor material FIrpic, test data result shows that our material can be used as blue phosphorescent material of main part.
Embodiment 2:
The preparation process preparation process of 2,2'-bis-(5-(4-tert-butyl phenyl)-1,3,4-oxadiazole-2-base) phenylbenzene is as follows:
Under nitrogen and the protection of argon gas gas mixture, by 2-(4-bromophenyl)-5-(4-tert-butyl phenyl)-1, 3, 4-oxadiazole (106mg, 0.3mmol), 2-(4-tert-butyl phenyl)-5-(4-tetramethyl ethylene ketone boric acid ester phenyl)-1, 3, 4-oxadiazole (267mg, 0.66mmol) add in the two-mouth bottle of 50mL specification with 15mL tetrahydrofuran (THF), after the gas mixture air-discharging passing into nitrogen and argon gas after abundant dissolving is about 20min, then by tetra-triphenylphosphine palladium (4mg, 0.003mmol) add wherein, sodium bicarbonate (3mL is added again after abundant dissolving, 2mol/L) solution.After the gas mixture air-discharging of fully logical nitrogen and argon gas is about 10min again, two-mouth bottle is joined 70 DEG C and carry out Suzuki coupling reaction 48h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, be spin-dried for after anhydrous magnesium sulfate drying, obtain this 2,2'-bis-(5-(4-tert-butyl phenyl)-1,3,4-oxadiazole-2-base) phenylbenzene organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is 10:1 is that leacheate obtains white crystal through silica gel column chromatography separation.The lower 50 DEG C of dry 24h of last vacuum.Productive rate is 85%.
Embodiment 3:
The preparation process preparation process of 2,2'-bis-(5-(4-tert-butyl phenyl)-1,3,4-oxadiazole-2-base) phenylbenzene is as follows:
Under nitrogen protection, by 2-(4-bromophenyl)-5-(4-tert-butyl phenyl)-1, 3, 4-oxadiazole (106mg, 0.3mmol), 2-(4-tert-butyl phenyl)-5-(4-tetramethyl ethylene ketone boric acid ester phenyl)-1, 3, 4-oxadiazole (291mg, 0.72mmol), palladium (3.5mg, 0.015mmol), palladium (3.5mg, 0.015mmol) He three (o-methoxyphenyl) phosphine (21mg, 0.06mmol) join the N filling 12mL, in the flask of dinethylformamide, salt of wormwood (3mL is added after abundant dissolving, 2mol/L) solution, after in flask, logical nitrogen purge gas is about 30min subsequently, flask is heated to 130 DEG C and carries out Suzuki coupling reaction 12h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, be spin-dried for after anhydrous magnesium sulfate drying, obtain this 2,2'-bis-(5-(4-tert-butyl phenyl)-1,3,4-oxadiazole-2-base) phenylbenzene organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is 10:1 is that leacheate obtains white crystal through silica gel column chromatography separation.The lower 50 DEG C of dry 24h of last vacuum.Productive rate is 79%.
Embodiment 4:
The preparation process preparation process of 2,2'-bis-(5-(4-tert-butyl phenyl)-1,3,4-oxadiazole-2-base) phenylbenzene is as follows:
Under nitrogen protection; by 2-(4-bromophenyl)-5-(4-tert-butyl phenyl)-1; 3; 4-oxadiazole (106mg; 0.3mmol), 2-(4-tert-butyl phenyl)-5-(4-tetramethyl ethylene ketone boric acid ester phenyl)-1; 3; 4-oxadiazole (291mg; 0.72mmol), three or two argon benzyl acetones two palladium (9mg, 0.009mmol) and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl (29mg; 0.072mmol) join the N filling 12mL; in the flask of dinethylformamide, after fully dissolving, add sodium carbonate (3mL, 2mol/L) solution.After in flask, logical nitrogen purge gas is about 30min subsequently; Flask is heated to 120 DEG C and carries out Suzuki coupling reaction 36h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, be spin-dried for after anhydrous magnesium sulfate drying, obtain this 2,2'-bis-(5-(4-tert-butyl phenyl)-1,3,4-oxadiazole-2-base) phenylbenzene organic semiconductor material, then adopt sherwood oil: ethyl acetate (10:1) for leacheate through silica gel column chromatography be separated obtain white crystal.The lower 50 DEG C of dry 24h of last vacuum.Productive rate is 75%.
Application Example
Organic electroluminescence device 300, as Fig. 1, it comprises substrate 301 to its structure, anode 302, hole injection layer 303, hole transmission layer 304, luminescent layer 305, electron transfer layer 306, electron injection buffer layer 307, negative electrode 308.
The material of substrate 301 in the present embodiment is glass, vacuum plating anode 302 successively in substrate 301, hole injection layer 303, hole transmission layer 304, luminescent layer 305, electron transfer layer 306, electron injection buffer layer 307, negative electrode 308, anode 302 adopts square resistance to be the tin indium oxide of 10 ~ 20 Ω/mouth, thickness is 150nm, hole injection layer 303 adopts poly-(3, 4-ethene dioxythiophene)-polystyrolsulfon acid, thickness is 30nm, hole transmission layer 304 adopts N, N '-phenylbenzene-N, N '-(1-naphthyl)-1, 1 '-biphenyl-4, 4 '-diamines, thickness is 50nm, the compound 2 that luminescent layer 305 main body luminescent material adopts the invention process 1 to prepare, 2'-bis-(5-(4-tert-butyl phenyl)-1, 3, 4-oxadiazole-2-base) phenylbenzene, and to take material of main part as benchmark doping mass percent be 8% guest emitting material two (4, 6-difluorophenyl pyridinato-N, C2) pyridinecarboxylic closes iridium (III), luminescent layer 305 thickness is 20nm, electron transfer layer 306 adopts Alq 3, three (oxine) aluminium, thickness is 30nm, and electron injection buffer layer 307 adopts lithium fluoride, and thickness is 1.5nm, and negative electrode 308 adopts metallic aluminium, and thickness is 150nm.
Organic layer and metal level all adopt thermal evaporation process to deposit, and vacuum tightness is 10 -3~ 10 -5pa, the thickness of film adopts film thickness monitoring instrument to monitor, except guest materials, the vaporator rate of all organic materialss is second, the vaporator rate of lithium fluoride is second, the vaporator rate of metallic aluminium is second.
In room temperature, air, adopt and carry out current versus brightness-voltage characteristic measurement with the organic electroluminescence device of Keithley source measuring system (Keithley2400Sourcemeter, Keithley2000Cuirrentmeter) to preparation correcting silicon photoelectric diode; Thermogravimetic analysis (TGA) is completed by the measurement of Perkin-Elmer Series7 Thermo System.Test result shows, and the maximum current efficiency of this organic electroluminescence device is 7.1cd/A, and high-high brightness is 22530cd/m 2.Result shows polymer host material better performances of the present invention, is a kind of very promising Blue-light emitting host material.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.

Claims (10)

1. an organic semiconductor material, is characterized in that, the chemical formula of described organic semiconductor material is as follows:
2. a preparation method for organic semiconductor material, is characterized in that, comprises the steps:
Compd A is provided: and compd B: under an inert atmosphere, be at 70 ~ 130 DEG C, carry out Suzuki coupling reaction 12 ~ 48 hours during 1:1 ~ 1.2 are added into containing catalyzer and alkaline solution organic solvent by compd A and compd B according to mol ratio, described catalyzer is the mixture of organic palladium or organic palladium and organophosphorus ligand, and the chemical formula that stopped reaction obtains organic semiconductor material is as follows:
3. preparation method as claimed in claim 2, it is characterized in that, the preparation method of described organic semiconductor material comprises post-processing step further, described post-processing step is specially: stopped reaction is obtained organic semiconductor material methylene dichloride and extract, anhydrous magnesium sulfate drying is adopted after merging organic phase, and adopting the mixed solvent of sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, namely vacuum-drying obtain target product.
4. preparation method as claimed in claim 2, it is characterized in that, described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
5. preparation method as claimed in claim 2, it is characterized in that, described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution, and the solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
6. preparation method as claimed in claim 2, it is characterized in that, described organic palladium is bis-triphenylphosphipalladium palladium dichloride, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture.Wherein, the molar weight of Phosphine ligands is 4 ~ 8 times of organic palladium molar weight.
7. preparation method as claimed in claim 2, it is characterized in that, the mol ratio of described organic palladium and described compd A is 1:20 ~ 1:100.
8. an electroluminescent device, is characterized in that, comprises the substrate with anode, luminescent layer and the cathode layer that stack gradually, and described luminescent layer is the mixture of material of main part and guest materials, the organic semiconductor material that wherein material of main part is as follows:
guest materials is two (4,6-difluorophenyl pyridinato-N, C2) pyridinecarboxylic closes iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
9. electroluminescent device as claimed in claim 8, it is characterized in that, the mass percent of described material of main part and described guest materials is 5% ~ 25%.
10. electroluminescent device as claimed in claim 8, it is characterized in that, described anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
CN201310206826.9A 2013-05-29 2013-05-29 Organic semiconductor material, preparation method, and electroluminescent device Pending CN104211656A (en)

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Application publication date: 20141217