CN103896912B - A kind of organic semiconductor material, preparation method and electroluminescent device - Google Patents

A kind of organic semiconductor material, preparation method and electroluminescent device Download PDF

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CN103896912B
CN103896912B CN201210578694.8A CN201210578694A CN103896912B CN 103896912 B CN103896912 B CN 103896912B CN 201210578694 A CN201210578694 A CN 201210578694A CN 103896912 B CN103896912 B CN 103896912B
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semiconductor material
organic semiconductor
compd
preparation
organic
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CN103896912A (en
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周明杰
王平
张振华
张娟娟
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
    • C07D333/48—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom by oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides a kind of organic semiconductor material, the chemical formula of described organic semiconductor material is as follows: organic semiconductor material of the present invention has bipolarity carrier transport ability, makes the hole in luminescent layer and electric transmission balance; Also there is higher triplet and excellent thermal stability simultaneously, effectively prevent energy in luminescence process from returning to material of main part, substantially increase luminous efficiency; Present invention also offers the preparation method of this organic semiconductor material, and comprise the electroluminescent device of this organic semiconductor material.

Description

A kind of organic semiconductor material, preparation method and electroluminescent device
Technical field
The invention belongs to field of photovoltaic materials, be specifically related to a kind of organic semiconductor material, preparation method and electroluminescent device.
Background technology
Organic electroluminescence device has that driving voltage is low, fast response time, angular field of view are wide and changes luminescent properties by chemical structure fine setting makes rich color, easily realize the advantages such as resolving power is high, lightweight, large-area flat-plate display, be described as " 21 century flat panel display ", become the focus of the subjects such as material, information, physics and flat pannel display area research.Following commercialization Organic Light Emitting Diode efficiently will contain organo-metallic phosphorescent substance possibly, because singlet and triplet excitons can all be caught by they, thus realize the internal quantum efficiency of 100%.But, because the excited state exciton lifetime of transition metal complex is relatively long, cause unwanted triplet state-triplet state (T 1-T 1) cancellation in device real work.In order to overcome this problem, triplet emission thing is often doped in organic host material by investigators.
In recent years, green and red phosphorescent OLED shows gratifying electroluminescent efficiency.And blue phosphorescent device is little efficiently, simultaneously major cause lacks to have good carrier transmission performance and higher triplet (E t) material of main part.
Summary of the invention
For solving the problem, the invention provides a kind of organic semiconductor material, this organic semiconductor material has bipolarity carrier transport ability, makes the hole in luminescent layer and electric transmission balance; Also there is higher triplet and excellent thermal stability simultaneously, effectively prevent energy in luminescence process from returning to material of main part, substantially increase luminous efficiency, organic semiconductor material of the present invention is that bipolarity ruddiness phosphorescent light body material provides new selectable kind.Present invention also offers the preparation method of this organic semiconductor material, and comprise the electroluminescent device of this organic semiconductor material.
On the one hand, the invention provides a kind of organic semiconductor material, the chemical formula of described organic semiconductor material is as follows:
Second aspect, the invention provides a kind of preparation method of organic semiconductor material, comprises the steps:
Compd A is provided: and compd B: under an inert atmosphere, be at 70 ~ 130 DEG C, carry out Suzuki coupling reaction 12 ~ 48 hours during 1:2 ~ 2.4 are added into containing catalyzer and alkaline solution organic solvent by compd A and compd B according to mol ratio, the chemical formula that stopped reaction obtains organic semiconductor material is as follows:
Preferably, the preparation method of described organic semiconductor material comprises post-processing step further, described post-processing step is specially: stopped reaction is obtained organic semiconductor material methylene dichloride and extract, anhydrous magnesium sulfate drying is adopted after merging organic phase, and adopting the mixed solvent of sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, namely vacuum-drying obtain target product.
Preferably, described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
Preferably, described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution, and the solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
Preferably, described organic palladium is bis-triphenylphosphipalladium palladium dichloride, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture.Wherein, the molar weight of Phosphine ligands is 4 ~ 8 times of organic palladium molar weight.
Preferably, the mol ratio of described organic palladium and described compd A is 1:20 ~ 1:100.
The third aspect, the invention provides a kind of electroluminescent device, comprise the substrate with anode, luminescent layer and the cathode layer that stack gradually, described luminescent layer is the mixture of material of main part and guest materials, the organic semiconductor material that wherein material of main part is as follows: guest materials is three [1-phenyl isoquinolin quinoline-C2, N] iridium, two (4,6-difluorophenyl pyridinato-N, C2) pyridinecarboxylic closes iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
Preferably, the mass percent of described material of main part and described guest materials is 5% ~ 15%.
Preferably, anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
The invention provides a kind of organic semiconductor material, preparation method and electroluminescent device, there is following beneficial effect: there is bipolarity carrier transport ability, make the hole in luminescent layer and electric transmission balance; Also have higher triplet and excellent thermal stability, effectively prevent energy in luminescence process from returning to material of main part, substantially increase luminous efficiency, synthetic method is simple, can be used for ruddiness phosphorescent light body material simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device obtained for material of main part with organic semiconductor material obtained in embodiment 1;
Fig. 2 is the thermogravimetic analysis (TGA) figure of organic semiconductor material obtained in embodiment 1.
Embodiment
In order to understand the content of patent of the present invention better, technology case of the present invention is further illustrated below by concrete example and legend, specifically comprise material preparation and device preparation, but these embodiments do not limit the present invention, wherein monomer A, monomers B all commercially obtain.
The invention provides a kind of organic semiconductor material, the chemical formula of described organic semiconductor material is as follows:
This organic semiconductor material has bipolarity carrier transport ability, makes the hole in luminescent layer and electric transmission balance; Also have higher triplet and excellent thermal stability, effectively prevent energy in luminescence process from returning to material of main part, substantially increase luminous efficiency, therefore organic semiconductor material of the present invention has bipolarity ruddiness phosphorescent light body material simultaneously.
The invention provides a kind of preparation method of organic semiconductor material, comprise the steps:
Compd A is provided: and compd B: under an inert atmosphere, be at 70 ~ 130 DEG C, carry out Suzuki coupling reaction 12 ~ 48 hours during 1:2 ~ 2.4 are added into containing catalyzer and alkaline solution organic solvent by compd A and compd B according to mol ratio, the chemical formula that stopped reaction obtains organic semiconductor material is as follows:
In a particular embodiment, the preparation method of described organic semiconductor material comprises post-processing step further, described post-processing step is specially: stopped reaction is obtained organic semiconductor material methylene dichloride and extract, anhydrous magnesium sulfate drying is adopted after merging organic phase, and adopting the mixed solvent of sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, namely vacuum-drying obtain target product.
In a particular embodiment, the volume ratio of sherwood oil and ethyl acetate is 10:1 ~ 8:1;
In a particular embodiment, vacuum drying condition is 50 ~ 70 DEG C of dryings 12 ~ 24 hours;
In a particular embodiment, described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
In a particular embodiment, described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution, and the solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
In a particular embodiment, described organic palladium is bis-triphenylphosphipalladium palladium dichloride, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture.Wherein, the molar weight of Phosphine ligands is 4 ~ 8 times of organic palladium molar weight.
In a particular embodiment, the mol ratio of described organic palladium and described compd A is 1:20 ~ 1:100.
Have employed better simply synthetic route, thus reduce technical process, starting material are cheap and easy to get, and manufacturing cost is reduced.
The invention provides a kind of electroluminescent device, comprise the substrate with anode, luminescent layer and the cathode layer that stack gradually, described luminescent layer is the mixture of material of main part and guest materials, the organic semiconductor material that wherein material of main part is as follows: guest materials is three [1-phenyl isoquinolin quinoline-C2, N] iridium, two (4,6-difluorophenyl pyridinato-N, C2) pyridinecarboxylic closes iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
In a particular embodiment, the mass percent of described guest materials and described material of main part is 5% ~ 15%.
In a particular embodiment, anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
Organic luminescent device based on this material launches blue light, and luminous efficiency is high.
Embodiment 1:
N, N ' the preparation process preparation process of-(4,4 '-(thiophene sulfone-2,5-bis-base) two (4,1-phenyl)) two (N-benzene naphthyl-1-amine) is as follows:
Under argon shield, by 2,5-dibromo thiophene sulfone (55mg, 0.2mmol), N-(4-tetramethyl ethylene ketone boric acid ester phenyl)-N-phenylnaphthalene-1-amine (168mg, 0.4mmol) adds in the flask filling 10ml toluene solvant, by salt of wormwood (2mL after fully dissolving, 2mol/L) solution joins in flask, vacuumize deoxygenation and be filled with argon gas, then adding bis-triphenylphosphipalladium palladium dichloride (5.6mg, 0.008mmol); Flask is heated to 100 DEG C and carries out Suzuki coupling reaction 24h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, be spin-dried for after anhydrous magnesium sulfate drying, obtain this N, N '-(4,4 '-(thiophene sulfone-2,5-bis-base) two (4,1-phenyl)) two (N-benzene naphthyl-1-amine) organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is 10:1 is that leacheate obtains white crystal through silica gel column chromatography separation.The lower 50 DEG C of dry 24h of last vacuum.Productive rate is 80%.
Test data of experiment: mass spectrum: m/z702.2(M ++ 1);
Ultimate analysis (%) C 48h 34n 2o 2s: theoretical value C82.02, H4.88, N3.99, O4.55S4.56; Measured value: C82.01, H4.90, N3.96, O4.52, S4.57.
See the thermogravimetic analysis (TGA) figure that accompanying drawing 2 is organic semiconductor material prepared by the present embodiment, thermogravimetric curve (TGA) test is carried out on TASDT2960instruments, and under nitrogen gas stream protection, heat-up rate is 10K/min.The thermal weight loss temperature of 5% is 380 DEG C as seen from the figure.
By test for low temperature phosphorescence spectrum, instrument is FS modular fluorometer/pectrophosphorimeter, to investigate its triplet emission characteristic.Under the liquid nitrogen of 77K, bill of material reveals very strong phosphorescent emissions, and emission peak is at 506nm, and corresponding triplet energy state is 2.45eV, is much higher than phosphor material three [1-phenyl isoquinolin quinoline-C2, N] iridium (III) [Ir (piq) 3] triplet energy state (1.90eV), test data result shows that our material can be used as ruddiness phosphorescent light body material.
Embodiment 2:
N, N ' the preparation process preparation process of-(4,4 '-(thiophene sulfone-2,5-bis-base) two (4,1-phenyl)) two (N-benzene naphthyl-1-amine) is as follows:
Under nitrogen and the protection of argon gas gas mixture; by 2; 5-dibromo thiophene sulfone (82mg; 0.3mmol), N-(4-tetramethyl ethylene ketone boric acid ester phenyl)-N-phenylnaphthalene-1-amine (278mg; 0.66mmol) add in the two-mouth bottle of 50mL specification with 15mL tetrahydrofuran (THF); after the gas mixture air-discharging passing into nitrogen and argon gas after abundant dissolving is about 20min; then by tetra-triphenylphosphine palladium (4mg; 0.003mmol) add wherein; sodium bicarbonate (3mL, 2mol/L) solution is added again after abundant dissolving.After the gas mixture air-discharging of fully logical nitrogen and argon gas is about 10min again, two-mouth bottle is heated to 70 DEG C and carries out Suzuki coupling reaction 48h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, be spin-dried for after anhydrous magnesium sulfate drying, obtain this N, N '-(4,4 '-(thiophene sulfone-2,5-bis-base) two (4,1-phenyl)) two (N-benzene naphthyl-1-amine) organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is 10:1 is that leacheate obtains white crystal through silica gel column chromatography separation.The lower 50 DEG C of dry 24h of last vacuum.Productive rate is 75%.
Embodiment 3:
N, N ' the preparation process preparation process of-(4,4 '-(thiophene sulfone-2,5-bis-base) two (4,1-phenyl)) two (N-benzene naphthyl-1-amine) is as follows:
Under nitrogen protection, by 2,5-dibromo thiophene sulfone (82mg, 0.3mmol), N-(4-tetramethyl ethylene ketone boric acid ester phenyl)-N-phenylnaphthalene-1-amine (303mg, 0.72mmol), palladium (3.5mg, 0.015mmol) He three (o-methoxyphenyl) phosphine (21mg, 0.06mmol) join the N filling 12mL, in the flask of dinethylformamide, salt of wormwood (3mL is added after abundant dissolving, 2mol/L) solution, after in flask, logical nitrogen purge gas is about 30min subsequently; Flask is heated to 130 DEG C and carries out Suzuki coupling reaction 12h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, be spin-dried for after anhydrous magnesium sulfate drying, obtain this N, N '-(4,4 '-(thiophene sulfone-2,5-bis-base) two (4,1-phenyl)) two (N-benzene naphthyl-1-amine) organic semiconductor material, then adopt sherwood oil: ethyl acetate volume ratio is 10:1 is that leacheate obtains white crystal through silica gel column chromatography separation.The lower 50 DEG C of dry 24h of last vacuum.Productive rate is 72%.
Embodiment 4:
N, N ' the preparation process preparation process of-(4,4 '-(thiophene sulfone-2,5-bis-base) two (4,1-phenyl)) two (N-benzene naphthyl-1-amine) is as follows:
Under nitrogen protection; by 2; 5-dibromo thiophene sulfone (82mg; 0.3mmol), N-(4-tetramethyl ethylene ketone boric acid ester phenyl)-N-phenylnaphthalene-1-amine (303mg; 0.72mmol), three or two argon benzyl acetone two palladium (9mg; 0.009mmol) with 2-dicyclohexyl phosphine-2 '; 6 '-dimethoxy-biphenyl (29mg; 0.072mmol) join the N filling 12mL; in the flask of dinethylformamide; sodium carbonate (3mL, 2mol/L) solution is added after abundant dissolving.After in flask, logical nitrogen purge gas is about 30min subsequently; Flask is heated to 120 DEG C and carries out Suzuki coupling reaction 36h.Stopped reaction cool to room temperature, with dichloromethane extraction three times, merge organic phase, be spin-dried for after anhydrous magnesium sulfate drying, obtain this N, N '-(4,4 '-(thiophene sulfone-2,5-bis-base) two (4,1-phenyl)) two (N-benzene naphthyl-1-amine) organic semiconductor material, then adopt sherwood oil: ethyl acetate (10:1) for leacheate through silica gel column chromatography be separated obtain white crystal.The lower 50 DEG C of dry 24h of last vacuum.Productive rate is 83%.
Application Example
Organic electroluminescence device 300, as Fig. 1, it comprises substrate 301 to its structure, anode 302, hole injection layer 303, hole transmission layer 304, luminescent layer 305, electron transfer layer 306, electron injection buffer layer 307, negative electrode 308.
The material of substrate 301 in the present embodiment is glass, vacuum plating anode 302 successively in substrate 301, hole injection layer 303, hole transmission layer 304, luminescent layer 305, electron transfer layer 306, electron injection buffer layer 307, negative electrode 308, anode 302 adopts square resistance to be the tin indium oxide of 10 ~ 20 Ω/, thickness is 150nm, hole injection layer 303 adopts poly-(3, 4-ethene dioxythiophene)-polystyrolsulfon acid, thickness is 30nm, hole transmission layer 304 adopts N, N '-phenylbenzene-N, N '-(1-naphthyl)-1, 1 '-biphenyl-4, 4 '-diamines, thickness is 20nm, the compound N that luminescent layer 305 main body luminescent material adopts the invention process 1 to prepare, N '-(4, 4 '-(thiophene sulfone-2, 5-bis-base) two (4, 1-phenyl)) two (N-benzene naphthyl-1-amine), and to take material of main part as benchmark doping mass percent be 12% guest emitting material three [1-phenyl isoquinolin quinoline-C2, N] iridium (III), luminescent layer 305 thickness is 20nm, electron transfer layer 306 adopts 5 (4, 7-phenylbenzene-1, 10-phenanthroline, thickness is 30nm, electron injection buffer layer 307 adopts lithium fluoride, thickness is 1nm, negative electrode 308 adopts metallic aluminium, thickness is 100nm.
Organic layer and metal level all adopt thermal evaporation process to deposit, and vacuum tightness is 10 -3~ 10 -5pa, the thickness of film adopts film thickness monitoring instrument to monitor, except guest materials, the vaporator rate of all organic materialss is / second, the vaporator rate of lithium fluoride is / second, the vaporator rate of metallic aluminium is / second.
This electroluminescent device has higher luminous efficiency, can be widely used in the illumination field such as blueness or white.Current versus brightness-the voltage characteristic of device is all completed in atmosphere at room temperature by all measurements completed with Keithley source measuring system (Keithley2400Sourcemeter, Keithley2000Cuirrentmeter) correcting silicon photoelectric diode.Result shows: the trigger voltage of device is 3.6V, at 1000cd/m 2brightness under, luminous efficiency is 11.2lm/W.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.

Claims (10)

1. an organic semiconductor material, is characterized in that, the chemical formula of described organic semiconductor material is as follows:
described organic semiconductor material adopts following methods to prepare: provide compd A: and compd B: under an inert atmosphere, be at 70 ~ 130 DEG C, carry out Suzuki coupling reaction 12 ~ 48 hours during 1:2 ~ 2.4 are added into containing catalyzer and alkaline solution organic solvent by compd A and compd B according to mol ratio, stopped reaction obtains organic semiconductor material.
2. a preparation method for organic semiconductor material, is characterized in that, comprises the steps:
Compd A is provided: and compd B: under an inert atmosphere, be at 70 ~ 130 DEG C, carry out Suzuki coupling reaction 12 ~ 48 hours during 1:2 ~ 2.4 are added into containing catalyzer and alkaline solution organic solvent by compd A and compd B according to mol ratio, the chemical formula that stopped reaction obtains organic semiconductor material is as follows:
3. preparation method as claimed in claim 2, it is characterized in that, the preparation method of described organic semiconductor material comprises post-processing step further, described post-processing step is specially: stopped reaction is obtained organic semiconductor material methylene dichloride and extract, anhydrous magnesium sulfate drying is adopted after merging organic phase, and adopting the mixed solvent of sherwood oil and ethyl acetate as leacheate through layer of silica gel separating-purifying, namely vacuum-drying obtain target product.
4. preparation method as claimed in claim 2, it is characterized in that, described organic solvent is selected from least one in toluene, DMF, tetrahydrofuran (THF).
5. preparation method as claimed in claim 2, it is characterized in that, described alkaline solution is selected from least one in sodium carbonate solution, solution of potassium carbonate and sodium hydrogen carbonate solution, and the solute in described alkaline solution and the mol ratio of compd A are 20:1 ~ 50:1.
6. preparation method as claimed in claim 2, it is characterized in that, described catalyzer is bis-triphenylphosphipalladium palladium dichloride, tetra-triphenylphosphine palladium, palladium and tri-o-tolyl phosphine mixture or three or two argon benzyl acetone two palladiums and 2-dicyclohexyl phosphine-2 ', 6 '-dimethoxy-biphenyl mixture, wherein, the molar weight of Phosphine ligands is 4 ~ 8 times of organic palladium molar weight.
7. preparation method as claimed in claim 2, it is characterized in that, the mol ratio of described catalyzer and described compd A is 1:20 ~ 1:100.
8. an electroluminescent device, is characterized in that, comprises the substrate with anode, luminescent layer and the cathode layer that stack gradually, and described luminescent layer is the mixture of material of main part and guest materials, the organic semiconductor material that wherein material of main part is as follows:
guest materials is three [1-phenyl isoquinolin quinoline-C2, N] iridium, two (4,6-difluorophenyl pyridinato-N, C2) pyridinecarboxylic closes iridium, [two (2 ', 4 '-difluorophenyl) pyridine] [four (1-pyrazolyl) boron] closes iridium or [two (2 ', 4 '-difluorophenyl) pyridine] (tetrazolium pyridine) closes iridium.
9. electroluminescent device as claimed in claim 8, it is characterized in that, the mass percent of described material of main part and described guest materials is 5% ~ 15%.
10. electroluminescent device as claimed in claim 8, it is characterized in that, described anode material is indium zinc oxide or zinc oxide aluminum, and negative electrode is metallic aluminium, silver, gold or nickel.
CN201210578694.8A 2012-12-27 2012-12-27 A kind of organic semiconductor material, preparation method and electroluminescent device Active CN103896912B (en)

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Torsional Effects on Excitation Energies of Thiophene Derivatives Induced by β-Substituents: Comparison Between Time-Dependent Density Functional Theory and Approximated Coupled Cluster Approaches;M. PIACENZA et.al.;《Journal of Computational Chemistry》;20070718;第29卷(第3期);451-457 *

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