CN103959924A - 纳米级冷却的纳米等离子体激元装置 - Google Patents
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Abstract
本发明提供一种纳米等离子体激元装置,其包括:具有加热侧和冷却侧的纳米等离子体激元加热层,该加热层包括多个局部能量接收位点;以及邻接于冷却侧的冷却结构,该冷却结构包括从加热层除热的纳米级结构。
Description
技术领域
本发明涉及一种纳米等离子体激元装置,尤其是涉及对纳米等离子体激元装置的冷却。
背景技术
纳米等离子体激元技术越来越多地被用于将光能量耦合入装置内。此类应用的例子包括磁存储器、光伏电池和亚波长光刻。除了能量的高效耦合,亚波长分辨率也是可能的。
上述应用中使用小于衍射极限的光斑。这可能会导致显著的局部发热。可以利用大体积的金属层来除热,但这会导致热扩散引起的一般加热,也可能改变装置的近场特性。通常,可能难以获得令人满意的、高效和紧凑的冷却效果。
发明内容
本发明的纳米等离子体激元装置包括:纳米等离子体激元的加热层,其具有加热侧和冷却侧,并包括多个局部能量接收位点;以及邻接于所述冷却侧的冷却结构,其包括从加热层除热的纳米级结构。
附图说明
图1是根据本发明一个方面的纳米等离子体激元系统的一例的示意图。
图2是根据本发明另一个方面的纳米等离子体激元装置的一例的示意图。
图3是根据本发明再另一个方面的纳米等离子体激元装置的一例的示意图。
图4是根据本发明再另一个方面的纳米等离子体激元装置的一例的示意图。
具体实施方式
如图1所示,纳米等离子体激元系统10例如包括光源12、纳米传感元件14和纳米装置20。
纳米装置20包括具有加热侧24和冷却侧26的加热层22、和邻接于冷却侧26的冷却结构28。冷却结构28包括以下详述的纳米结构。
加热层22可以是例如热响应的磁存储材料、光伏电池或光刻材料。
在操作时,各个光源12和纳米传感元件14的组合可以在加热层22上产生光能量的亚波长斑16。纳米传感元件14可以是例如纳米颗粒、纳米天线和纳米波导等用于定位入射辐射并转换成亚波长加热斑的公知装置。各个斑16均与一个局部能量接收位点相对应。这能够转换单个光源12和纳米传感元件14的组合来连续照射上述斑16。纳米级的辐射热传递是耦合由各个斑16和纳米传感元件16的组合所产生的亚波长光斑16的基础机制。
当两个物体未接触时,即,当这两个物体隔开一定距离时,仍然存在因辐射热传递而产生的物体间热传递。热通过电磁辐射在这两个物体间传导。传统上,该来自一个物体的电磁辐射与该物体的温度相关,即所谓的黑体辐射。从一个物体到另一个物体的电磁辐射热传递不仅取决于辐射体的温度,还同样取决于包括两物体间距离在内的其他因素。从一个物体发出的电磁辐射为l/R,其中R为到该物体的距离。电磁能量为l/R2。
然而,在纳米数量级,即亚波长级中,当物体以小于亚波长级被分开时,表面间的辐射热传递可以比普朗克黑体辐射的预测值高出若干个数量级。在亚波长距离上的辐射热传递可以比普朗克黑体辐射的预测值高三个数量级。这种增强是由于倏逝场的电磁能隧穿,以及结构上的表面等离子体或声子极化的激发。有几种方法来提高这种物体之间的辐射热传递。当物体被置于亚波长的近场区域中时,由于物体之间的电磁能量的倏逝波耦合而使物体之间的辐射能量转移增强。这种现象也被称为光子隧穿,当物体被分离成小于光波长时即能够观察到这种现象。另外,表面等离子体共振或声子共振也促进电磁能量传递。如果结构支持表面等离子体共振或表面声子共振,则电磁能量传递大大增加。如本发明所使用的,当一个或多个结构分别支持表面等离子体共振或表面声子共振时,等离子体激元冷却或声子冷却对应于通过增强的能量传递而进行的对物体的冷却。
物体之间的空间或间隙可以是例如空气或真空,也可以用电介质等材料形成。
如图2所示,纳米等离子体激元装置20包括加热层22和形成于基材30上的冷却结构28’。该基材可以是例如硅等半导体或介电材料、或陶瓷玻璃、非结晶玻璃等其他任何合适的材料,并通常比其他层厚。加热层可以是例如5nm至30nm厚。冷却结构28’可以是例如5nm至200nm厚。
冷却结构28’由嵌入有纳米颗粒34的电介质或半导体32形成,该纳米颗粒34支持表面等离子体或声子共振。
纳米颗粒34的尺寸可以在5nm至200nm之间。优选颗粒尺寸为5nm至20nm量级。颗粒交替图案占总宽度的百分比可被称作占空比。颗粒的典型占空比为50%左右。
电介质32可以是例如二氧化硅、二氧化钛或五氧化二钽等氧化物。纳米颗粒32可由金、银、铝、铂、铜等金属制成,以支持表面等离子体激元共振。或者,纳米颗粒32可由碳化硅、立方氮化硼(cBN)、六方氮化硼(hBN)或碳化硼(BC)制成,以支持表面声子共振。
上述结构可以用不同的技术来制造。制造上述结构的一个可能方法是薄膜沉积和图案技术,该技术广为人知并被半导体厂商和硬盘驱动器厂商大量利用。可以使用溅射,热蒸发,离子束沉积等不同的技术来沉积薄膜层。可以使用光刻技术来实现上述结构的图案。也可以使用自有序阵列或纳米压印光刻技术等最近开发的技术来实现上述结构的图案化。
不同的图案可以由嵌入到电介质或半导体层的纳米颗粒制成。通过不同粒子间使用不同的占空比能够获得不同的图案。此外,不同的图案包括可以形成该层横截面的可能的形状。不同的图案可以指纳米颗粒的不同横截面,包括例如球形、圆柱形、矩形和正方形。不同的图案还可以指上述颗粒彼此间的不同排列,包括具有固定占空比的常规分布和随机分布。
上述发明利用基本电磁现象和热现象的耦合。设置能够支持表面等离子体激元共振和声子共振的图案化的结构,改善围绕这些区域的局域电磁场和光场分布。此类局域的和被提高的光场促进上述颗粒和加热层之间的辐射能量转移,从而改善局部加热和冷却。
如图3所示,纳米等离子体激元装置20包括形成于基材30上的加热层22和冷却结构28”。该基材可以是例如硅等半导体或介电材料、或陶瓷玻璃、非晶玻璃等其他任何合适的材料,通常比其他层厚。加热层可以是例如5nm至30nm厚。冷却结构28”可以是例如5nm至200nm厚。
冷却结构28”包括加热层22和极化层38、40、42、44之间的间隙36。间隙36有助于层之间的辐射能量转移。该间隙可以非常小,即,在纳米量级或亚波长级,以便于上述结构间的声子隧道效应(或倏逝能量耦合)。选择下方的层,以便其支持表面声子共振,或者,可选择其来支持表面等离子体激元共振。由此在物体间的辐射能量转移被进一步增强。
极化层38、40、42、44为多层结构,其中各个层可具有不同的厚度和材质。各个层可具有与其他层不同的性质。该堆积结构支持表面等离子体激元共振或表面声子共振。这些是能在特定条件下被激发的表面波。这些层可以是金或银等表面等离子体激元共振支持材料;或碳化硅、立方氮化硼(cBN)、六方氮化硼(hBN)或碳化硼(BC)等表面声子共振支持材料。在这些层之间为介电层。
如图4所示,纳米等离子体激元装置20包括形成于基材30上的加热层22和冷却结构28”’。
冷却结构28”’包括在基材30中和供循环冷却流体例如水使用的亚微米级通道46。在各个通道46中有纳米棒48,以提高热吸收。也可以采用非棒状的其他形状。
可以在例如硅基材中制造冷却结构28”’。基材30可以由两个半部阳极接合形成,并同样地被接合于加热层22。可以用电子束光刻技术来形成各个半部中的通道。在接合前,可以用掠射角沉积(GLAD)来沉积纳米结构。纳米结构可以是例如铜棒。
应注意,冷却结构28”’位于斑16之下。该位置也可用于本发明的其他实施例。这不仅使得用纳米级结构能更快散热,也使得冷却效果的汇集在更接近需要冷却的位置。
显而易见,以上说明仅仅是示例,在不脱离本发明的技术思想范围的前提下,可以通过增加、修改或删除技术特征来作出各种变形。因此本发明不限于所公开的具体细节,而只限定于权利要求的范围。
Claims (12)
1.一种纳米等离子体激元装置,包括:
纳米等离子体激元的加热层,其具有加热侧和冷却侧,所述加热层包括多个局部能量接收位点;以及
邻接于所述冷却侧的冷却结构,所述冷却结构包括从所述加热层除热的纳米级结构。
2.根据权利要求1所述的纳米等离子体激元装置,其中所述冷却结构包括等离子体激元冷却层。
3.根据权利要求2所述的纳米等离子体激元装置,其中所述等离子体激元冷却层包括纵向交替的纳米颗粒和非纳米颗粒的区域。
4.根据权利要求2所述的纳米等离子体激元装置,其中所述等离子体激元冷却层包括小于亚波长厚度的间隙层和等离子体亚层。
5.根据权利要求4所述的纳米等离子体激元装置,其中所述等离子体激元冷却层包括交替的间隙层和等离子体亚层。
6.根据权利要求1所述的纳米等离子体激元装置,其中所述冷却结构包括声子冷却层。
7.根据权利要求6所述的纳米等离子体激元装置,其中所述声子冷却层包括纵向交替的纳米颗粒和非纳米颗粒的区域。
8.根据权利要求6所述的纳米等离子体激元装置,其中所述声子冷却层包括小于亚波长厚度的间隙层和声子亚层。
9.根据权利要求8所述的纳米等离子体激元装置,其中所述声子冷却层包括交替的间隙层和声子亚层。
10.根据权利要求1所述的纳米等离子体激元装置,其中所述冷却结构包括:亚微米流体通道,其具有纳米级结构的吸热结构。
11.根据权利要求1所述的纳米等离子体激元装置,其中所述冷却结构位于所述能量接收位斑。
12.根据权利要求1所述的纳米等离子体激元装置,其中所述装置为数据存储装置、光伏电池和光刻介质之一。
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