CN103956400A - Core plate for back contact solar assembly and manufacturing method thereof - Google Patents
Core plate for back contact solar assembly and manufacturing method thereof Download PDFInfo
- Publication number
- CN103956400A CN103956400A CN201410207722.4A CN201410207722A CN103956400A CN 103956400 A CN103956400 A CN 103956400A CN 201410207722 A CN201410207722 A CN 201410207722A CN 103956400 A CN103956400 A CN 103956400A
- Authority
- CN
- China
- Prior art keywords
- silver
- metal foil
- rete
- layer
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 53
- 239000000956 alloy Substances 0.000 claims abstract description 53
- 239000011888 foil Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 230000007704 transition Effects 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 238000010586 diagram Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 9
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 239000002120 nanofilm Substances 0.000 abstract 7
- 239000000463 material Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910000632 Alusil Inorganic materials 0.000 description 4
- 239000005030 aluminium foil Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- -1 ormolu Substances 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 230000000802 nitrating effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010930 yellow gold Substances 0.000 description 2
- 229910001097 yellow gold Inorganic materials 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A core plate for a back contact solar assembly comprises a supporting layer and a metal foil layer from bottom to top, a non-silver-base-alloy nano film layer is arranged on the metal foil layer, and a nano transition film layer is arranged on the non-silver-base-alloy nano film layer. Due to the fact that the non-silver-base-alloy is adopted by the core plate, large adhesive force exists between the non-silver-base-alloy nano film layer and the metal foil layer and especially between the non-silver-base-alloy nano film layer and the aluminum metal foil layer, quite good adhesive force exists between the nano transition film layer and the non-silver-base-alloy nano film layer, and therefore the metal foil layer, the non-silver-base-alloy nano film layer and the nano transition film layer can be firmly attached together, and the problem that the non-silver-base-alloy nano film layer and the nano transition film layer easily fall off is solved. Therefore, after the core plate is connected with a solar cell piece through the nano transition film layer, the series resistance value between the solar cell piece and the core plate is quite small, and a contacted type solar cell has the good performance.
Description
Technical field
The present invention designs area of solar cell, relates in particular to central layer for back contact solar assembly and preparation method thereof.
Background technology
Along with the development of solar battery technology, back contact solar battery becomes development trend, and back contact solar battery does not need series welding operation in one-tenth product process, and its preparation process is simple, production efficiency is high, and back contact solar battery be in the light less, there are excellent properties of product.Wherein back contact solar battery backboard is positioned at the back side of solar panel, for sunlight being converted to electric energy and cell piece is played to protection and supporting role by photovoltaic effect.
Existing a kind of back contact solar battery backboard comprises substrate, central layer and insulating barrier.Wherein central layer comprises supporting layer and metal foil layer, and metal foil layer surface deposition has silverskin or silver-base alloy film.Back contact solar battery backboard is connected with cell piece by silverskin or silver-base alloy film, and silverskin or silver-base alloy film also can play the effect of protection against oxidation.Metal foil layer adopts aluminium foil mostly, and adhesive force between silverskin or silver-base alloy film and aluminium foil is less, therefore silverskin or silver-base alloy film are easy to come off from aluminium foil, after coming off, silverskin or silver-base alloy film not only do not have anti-oxidation effect, and can cause the contact resistance value between silverskin or silver-base alloy film and aluminium foil to increase, and then reduce the performance of back contact solar battery.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of nanometer transition rete difficult drop-off, the central layer for back contact solar assembly that contact resistance value is little.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: for the central layer of back contact solar assembly, it comprises supporting layer and metal foil layer from bottom to top, is provided with non-silver-base alloy nanometer rete on metal foil layer, on non-silver-base alloy nanometer rete, is provided with nanometer transition rete.
The material of described supporting layer can be selected ethylene-vinyl acetate copolymer (EVA), polyvinyl butyral resin (PVB), TPO film etc.
The material of described metal foil layer can be selected silver, copper, aluminium, nickel, ormolu, yellow gold, silver-nickel, corronil, aluminium and alusil alloy etc.
The material of described non-silver-base alloy nanometer rete can be selected copper, aluminium, nickel, brass, corronil, alusil alloy etc., and the material of nanometer transition rete can be selected silver, silver-base alloy, non-silver metal, non-silver-base alloy.
When nanometer transition rete adopts silver or silver-base alloy in the present invention, in non-silver-base alloy nanometer rete, do not contain aluminium.
For the purpose of concise description, below the central layer for back contact solar assembly of the present invention referred to as this central layer.
Because the present invention has adopted non-silver-base alloy, non-silver-base alloy nanometer rete and metal foil layer, especially between aluminum metal paper tinsel layer, there is larger adhesive force, and also there is extraordinary adhesive force between nanometer transition rete and non-silver-base alloy nanometer rete, therefore metal foil layer, between non-silver-base alloy nanometer rete and nanometer transition rete, can fit together firmly, avoid producing the problem that non-silver-base alloy nanometer rete and nanometer transition rete easily come off, therefore after this central layer is connected with solar battery sheet by nanometer transition rete, series impedance between solar battery sheet and this central layer is very little, make to be touched formula solar cell and there is good performance.
The present invention also provides a kind of preparation method of the central layer for back contact solar assembly, comprises the following steps:
(1) method that adopts heating to pressurize is compound to supporting layer with metal foil layer together with;
(2) adopt the method for high-energy magnetic control reverse sputtering to process metal foil layer;
(3) at the non-silver-base alloy nanometer of metal foil layer surface deposition rete, at non-silver-base alloy nanometer rete surface deposition nanometer transition rete;
(4) nanometer transition rete, non-silver-base alloy nanometer rete and metal foil layer are carried out to the etching of circuit diagram.
The present invention adopts the method for high-energy magnetic control reverse sputtering to process metal foil layer, can remove like this organic pollution and the surface oxide layer on metal foil layer and increase its surface roughness, further increasing the adhesive force between non-silver-base alloy nanometer rete and metal foil layer.And the preparation method of the central layer for back contact solar assembly of the present invention has advantages of that technique is simple, constant product quality.
Improvement as the present invention for the preparation method of the central layer of back contact solar assembly, carries out the etching of circuit diagram by laser-induced thermal etching to nanometer transition rete, non-silver-base alloy nanometer rete and metal foil layer.Compare chemical etching method expensive, not environmental protection, laser-induced thermal etching more environmental protection and cost low.
Brief description of the drawings
Fig. 1 is the structural representation of one embodiment of the invention for the central layer of back contact solar assembly.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described:
As shown in Figure 1, the central layer for back contact solar assembly provided by the invention, it comprises supporting layer 1, metal foil layer 2, non-silver-base alloy nanometer rete 3 and nanometer transition rete 4 from bottom to top.
The material of supporting layer 1 can be selected the films such as ethylene-vinyl acetate copolymer (EVA), polyvinyl butyral resin (PVB), TPO, and its thickness is 50um-1000um.
The material of metal foil layer 2 can be selected silver, copper, aluminium, nickel, ormolu, yellow gold, silver-nickel, corronil, aluminium and alusil alloy etc., for the good material of the conductivity such as copper, silver, its thickness is 0.1 μ m-49.9 μ m, for other material, its thickness is 0.1 μ m-1000 μ m, and the concrete thickness of metal foil layer 2 is by conductance and the central layer power decision of material.
The thickness of non-silver-base alloy nanometer rete 3 and nanometer transition rete 4 is 1nm-1000nm, the material of non-silver-base alloy nanometer rete 3 can be selected copper, aluminium, nickel, brass, corronil, alusil alloy etc., and the material of nanometer transition rete 4 can be selected silver, silver-base alloy, non-silver metal, non-silver-base alloy.
The solar components power of preferably supporting for the central layer of back contact solar assembly provided by the invention is 100W/m
2---400W/m
2, be preferably 150W/m
2-250W/m
2.
The present invention also provides a kind of preparation method of the central layer for back contact solar assembly, comprises the following steps:
(1) method that adopts heating to pressurize is compound to supporting layer with metal foil layer together with;
The present invention can adopt the method for heating in vacuum lamination or heating roll extrusion in specific implementation process, and heating-up temperature scope is 0 DEG C-200 DEG C, and vacuum degree is 1Pa-100Pa, and the time is 1 minute to 20 minutes;
(2) adopt the method for high-energy magnetic control reverse sputtering to process metal foil layer;
Adopt high-energy magnetic control reverse sputtering method to process metal foil layer, to remove organic pollution and the surface oxide layer on metal foil layer and to increase its surface roughness;
(3) adopt the method for magnetron sputtering at the non-silver-base alloy nanometer of metal foil layer surface deposition rete, at non-silver-base alloy nanometer rete surface deposition nanometer transition rete;
The present invention can adopt vertical online magnetron sputtering embrane method in implementation process, adopt DC power supply sputter, intermediate frequency power supply or radio-frequency power supply, concrete steps are: on metal foil layer, utilize negative electrode magnetron sputtering to produce non-silver-base alloy nanometer rete, operating voltage is between 200V-600V, operating current is between 5A-400A, working gas is argon gas or argon gas nitrating gas, and operating air pressure is between 1Pa-0.1Pa; On non-silver-base alloy nanometer rete, utilize negative electrode magnetron sputtering preparing nano transition rete, operating voltage is between 200V-600V, and operating current is between 5A-400A, and working gas is argon gas or argon gas nitrating gas, and operating air pressure is between 1Pa-0.1Pa;
Preparing the negative electrode that non-silver-base alloy nanometer rete and nanometer transition rete adopt can be but be not limited to flat target, rotary target;
(4) nanometer transition rete, non-silver-base alloy nanometer rete and metal foil layer are carried out to the etching of circuit diagram.
The present invention can adopt the method for laser-induced thermal etching in implementation process, the power of laser used is 6W-1000W, wavelength is 1nm-10600nm, be preferably 266nm-397nm, 532nm, 1064nm, 10600nm, modulating frequency is greater than 10KHz, pulsewidth can be selected femtosecond, picosecond, nanosecond, Microsecond grade, depict after circuit diagram and remove isolation strip with mechanical means, nanometer transition rete, non-silver-base alloy nanometer rete is identical with the circuit diagram pattern etching on metal foil layer and position is corresponding.
Be to be understood that example as herein described and execution mode are only in order to illustrate, those skilled in the art can make various amendments or variation according to it, all belong to protection scope of the present invention.
Claims (2)
1. for the central layer of back contact solar assembly, it comprises supporting layer and metal foil layer from bottom to top, it is characterized in that: on metal foil layer, be provided with non-silver-base alloy nanometer rete, on non-silver-base alloy nanometer rete, be provided with nanometer transition rete.
2. the preparation method of the central layer for back contact solar assembly as claimed in claim 1, comprises the following steps:
(1) method that adopts heating to pressurize is compound to supporting layer with metal foil layer together with;
(2) adopt the method for high-energy magnetic control reverse sputtering to process metal foil layer;
(3) at the non-silver-base alloy nanometer of metal foil layer surface deposition rete, at non-silver-base alloy nanometer rete surface deposition nanometer transition rete;
(4) nanometer transition rete, non-silver-base alloy nanometer rete and metal foil layer are carried out to the etching of circuit diagram.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410207722.4A CN103956400A (en) | 2014-05-16 | 2014-05-16 | Core plate for back contact solar assembly and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410207722.4A CN103956400A (en) | 2014-05-16 | 2014-05-16 | Core plate for back contact solar assembly and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103956400A true CN103956400A (en) | 2014-07-30 |
Family
ID=51333650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410207722.4A Pending CN103956400A (en) | 2014-05-16 | 2014-05-16 | Core plate for back contact solar assembly and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103956400A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107492581A (en) * | 2017-08-04 | 2017-12-19 | 中来光伏科技（扬州）有限公司 | Back contact solar battery component and its manufacture method |
| CN110085692A (en) * | 2019-05-28 | 2019-08-02 | 晶澳（扬州）太阳能科技有限公司 | Photovoltaic conductive backboard, solar cell module and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169912A (en) * | 2011-01-17 | 2011-08-31 | 天津大学 | Mo/Ag laminated metal matrix composite for solar cell interconnected sheet and preparation process thereof |
| WO2012125587A1 (en) * | 2011-03-11 | 2012-09-20 | Avery Dennison Corporation | Sheet assembly with aluminum based electrodes |
| CN103474494A (en) * | 2012-06-05 | 2013-12-25 | 爱博福欧有限公司 | Back-sheet for photovoltaic modules comprising back-contact solar cells |
| CN203932086U (en) * | 2014-05-16 | 2014-11-05 | 普乐新能源（蚌埠）有限公司 | Central layer for back contact solar assembly |
-
2014
- 2014-05-16 CN CN201410207722.4A patent/CN103956400A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102169912A (en) * | 2011-01-17 | 2011-08-31 | 天津大学 | Mo/Ag laminated metal matrix composite for solar cell interconnected sheet and preparation process thereof |
| WO2012125587A1 (en) * | 2011-03-11 | 2012-09-20 | Avery Dennison Corporation | Sheet assembly with aluminum based electrodes |
| CN103474494A (en) * | 2012-06-05 | 2013-12-25 | 爱博福欧有限公司 | Back-sheet for photovoltaic modules comprising back-contact solar cells |
| CN203932086U (en) * | 2014-05-16 | 2014-11-05 | 普乐新能源（蚌埠）有限公司 | Central layer for back contact solar assembly |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107492581A (en) * | 2017-08-04 | 2017-12-19 | 中来光伏科技（扬州）有限公司 | Back contact solar battery component and its manufacture method |
| WO2019023820A1 (en) * | 2017-08-04 | 2019-02-07 | 中来光伏科技（扬州）有限公司 | Back-contact solar cell assembly and manufacturing method therefor |
| CN110085692A (en) * | 2019-05-28 | 2019-08-02 | 晶澳（扬州）太阳能科技有限公司 | Photovoltaic conductive backboard, solar cell module and preparation method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140730 |