CN103949613A - Method for preparing alumino-silicon-carbide high-thermal-conductivity substrate material for high-power module - Google Patents
Method for preparing alumino-silicon-carbide high-thermal-conductivity substrate material for high-power module Download PDFInfo
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- CN103949613A CN103949613A CN201410088586.1A CN201410088586A CN103949613A CN 103949613 A CN103949613 A CN 103949613A CN 201410088586 A CN201410088586 A CN 201410088586A CN 103949613 A CN103949613 A CN 103949613A
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Abstract
The invention relates to a method for an alumino-silicon-carbide high-thermal-conductivity substrate material for a high-power module. The method comprises the following steps of: uniformly mixing silicon carbide powder of different particle sizes according to a ratio; putting the uniformly mixed silicon carbide powder in a mould, and compacting by vibration; after preheating the mould filled with compacted silicon carbide powder in the second step, pouring a smelted aluminum alloy melt into the mould, applying pressure so that the aluminum alloy melt is filled in gaps between the silicon carbide powder, and is solidified under pressure, and cooling to obtain the alumino-silicon-carbide high-thermal-conductivity substrate material for the high-power module. The alumino-silicon-carbide high-thermal-conductivity substrate material can be prepared by a powder filing compaction method. By optimizing a silicon carbide powder ratio and utilizing mechanical vibration and ultrasonic vibration to improve the degree of compacting of the silicon carbide powder, the higher-thermal-conductivity and low-expansion alumino-silicon-carbide high-thermal-conductivity substrate material for the high-power IGBT (Insulated Gate Bipolar Translator) module is prepared, with the thermal conductivity of 240 to 280W / m.K.
Description
Technical field
The present invention relates to metal material preparation field, especially a kind of for high power module the preparation method for the aluminium silicon carbide high thermal conductive substrate material that dispels the heat.
Background technology
Development along with semiconductor technology, high power module chip integration improves constantly (for example IGBT power model), chip power constantly increases, the operating temperature of igbt chip also constantly rises thereupon, corresponding also more and more higher to the requirement of its encapsulating material especially heat-radiating substrate, not only require heat-radiating substrate to there is the lower thermal coefficient of expansion matching with electronic chip, be required to meet light-weighted needs, require the density of material low as much as possible, elastic modelling quantity is high as much as possible, but also requires to have higher thermal conductivity.In prior art, IGBT power model heat-radiating substrate material adopts metallic aluminium, copper, kovar alloy, tungsten copper, molybdenum copper etc. conventionally, although there is suitable thermal coefficient of expansion (CTE), but its thermal conductivity is low, resistivity is high, density is also larger, and its application is limited by very large, and more difficultly meets IGBT development to encapsulation and the needs of baseplate material.And the low-expansion coefficient of aluminium silicon carbide (AlSiC) material and the characteristic of high heat conductance become the ideal basis plate material of high power module, its application can greatly improve the reliability of IGBT power device.
In prior art, as Japan Patent JP2008-42011 discloses a kind of < < aluminium, silicon carbide compound body and manufacture method > > thereof, with Ludox, do adhesive, the silicon carbide powder preparing is in proportion mixed with Ludox, thermal conductivity by the standby aluminium silicon carbide material of prefabricated section legal system is 180～210W/mK, and thermal coefficient of expansion is 7.2～9 * 10-6/ ℃.Although can prepare the aluminium silicon carbide substrate with superperformance by the method, also exist thermal conductivity low, can not meet the requirement that high-power chip is higher to aluminium silicon carbide baseplate material.
Summary of the invention
The applicant is low for thermal conductivity in above-mentioned existing production technology, cannot meet the shortcoming of high-power chip to the requirement of aluminium silicon carbide baseplate material, the preparation method of a kind of high power module with aluminium silicon carbide high thermal conductive substrate material is provided, it can improve thermal conductivity, especially can meet the instructions for use of aluminium silicon carbide high thermal conductive substrate material for high power module.
The technical solution adopted in the present invention is as follows:
A preparation method for aluminium silicon carbide high thermal conductive substrate material for high power module, comprises the following steps:
The first step: the silicon carbide powder of variable grain degree is mixed in proportion;
Second step: the silicon carbide powder mixing is packed in mould, and pass through vibration ramming;
The 3rd step: will be equipped with described in second step after the mould and die preheating of consolidation silicon carbide powder, in described mould, be poured into melted aluminium alloy melt, exert pressure and make aluminium alloy melt be full of the hole between silicon carbide powder, and at Under Pressure Solidification, obtain aluminium silicon carbide high thermal conductive substrate material for high power module after cooling;
In the first step, adopt 80～300 order silicon carbide powders to mix with 500～1500 order silicon carbide powders, the part by weight of described 80～300 order silicon carbide powders and 500～1500 order silicon carbide powders is 2:1～5:1, and mixed method is mechanical mixture.
Further improvement as technique scheme:
In second step, vibration ramming is mechanical oscillation or ultrasonic vibration;
In the 3rd step, mold preheating temperature is 400～800 ℃;
In the 3rd step, the mode of exerting pressure is hydraulic pressure or air pressure, and applied pressure value is 5MPa～40MPa, and be 1～10min pressing time.
Beneficial effect of the present invention is as follows:
The present invention adopts powder packing consolidation legal system for aluminium silicon carbide high thermal conductive substrate material, by optimizing silicon carbide powder proportioning, utilize mechanical oscillation, ultrasonic vibration to improve the degree of packing of silicon carbide powder, prepare and have the more aluminium silicon carbide high thermal conductive substrate material for high-power IGBT module of high thermal conductivity, low bulk, its thermal conductivity is 240～280W/mK.
The specific embodiment
The specific embodiment of the present invention is described.
The preparation method of aluminium silicon carbide high thermal conductive substrate material for the high power module of the present embodiment, comprises the following steps:
The first step: the silicon carbide powder of variable grain degree is mixed in proportion; Adopt 80～300 order silicon carbide powders to mix with 500～1500 order silicon carbide powders, the part by weight of 80～300 order silicon carbide powders and 500～1500 order silicon carbide powders is 2:1～5:1, and mixed method is mechanical mixture.
Second step: the silicon carbide powder mixing is packed in mould, and pass through vibration ramming; Vibration ramming is mechanical oscillation or ultrasonic vibration.
The 3rd step: second step is equipped with after the mould and die preheating of consolidation silicon carbide powder, in mould, be poured into melted aluminium alloy melt, exert pressure and make aluminium alloy melt be full of the hole between silicon carbide powder, and at Under Pressure Solidification, obtain aluminium silicon carbide high thermal conductive substrate material for high power module after cooling; Mold preheating temperature is 400～800 ℃; The mode of exerting pressure is hydraulic pressure or air pressure, and applied pressure value is 5MPa～40MPa, and be 1～10min pressing time.
Embodiment mono-:
1000 gram of 80 object silicon carbide powder mixed mechanically with 500 gram of 1500 object silicon carbide powder, pack into subsequently and in mould, utilize the method for mechanical oscillation to make its consolidation, and be preheated to after 800 ℃, pour into aluminium alloy and make it at hydraulic action retrofilling and solidify, applied pressure value is 5MPa, be 10min pressing time, obtains aluminium silicon carbide high thermal conductive substrate material after the demoulding.Prepared aluminium silicon carbide highly heat-conductive material is carried out to thermal conductivity test, and thermal conductivity is 240W/mK.
Embodiment bis-:
1000 gram of 300 object silicon carbide powder mixed mechanically with 200 gram of 500 object silicon carbide powder, pack into subsequently and in mould, utilize the method for ultrasonic vibration to make its consolidation, and be preheated to after 400 ℃, pour into aluminium alloy and make it at gas pressure retrofilling and solidify, applied pressure value is 40MPa, be 1min pressing time, obtains aluminium silicon carbide high thermal conductive substrate material after the demoulding.Prepared aluminium silicon carbide highly heat-conductive material is carried out to thermal conductivity test, and thermal conductivity is 260W/mK.
Embodiment tri-:
1000 gram of 200 object silicon carbide powder mixed mechanically with 300 gram of 1000 object silicon carbide powder, pack into subsequently and in mould, utilize the method for mechanical oscillation to make its consolidation, and be preheated to after 800 ℃, pour into aluminium alloy and make it at hydraulic action retrofilling and solidify, applied pressure value is 20MPa, be 6min pressing time, obtains aluminium silicon carbide high thermal conductive substrate material after the demoulding.Prepared aluminium silicon carbide highly heat-conductive material is carried out to thermal conductivity test, and thermal conductivity is 280W/mK.
Thermal conductivity of the present invention is high, has avoided the low defect of thermal conductivity in prior art, can be widely used in the manufacture of aluminium silicon carbide high thermal conductive substrate material for high-power IGBT module.
More than describing is explanation of the invention, is not the restriction to invention, and limited range of the present invention, referring to claim, within protection scope of the present invention, can be done any type of modification.
Claims (4)
1. a preparation method for aluminium silicon carbide high thermal conductive substrate material for high power module, is characterized in that: comprise the following steps:
The first step: the silicon carbide powder of variable grain degree is mixed in proportion;
Second step: the silicon carbide powder mixing is packed in mould, and pass through vibration ramming;
The 3rd step: will be equipped with described in second step after the mould and die preheating of consolidation silicon carbide powder, in described mould, be poured into melted aluminium alloy melt, exert pressure and make aluminium alloy melt be full of the hole between silicon carbide powder, and at Under Pressure Solidification, obtain aluminium silicon carbide high thermal conductive substrate material for high power module after cooling;
In the first step, adopt 80～300 order silicon carbide powders to mix with 500～1500 order silicon carbide powders, the part by weight of described 80～300 order silicon carbide powders and 500～1500 order silicon carbide powders is 2:1～5:1, and mixed method is mechanical mixture.
2. the preparation method of aluminium silicon carbide high thermal conductive substrate material for high power module as claimed in claim 1, is characterized in that: in second step, vibration ramming is mechanical oscillation or ultrasonic vibration.
3. the preparation method of aluminium silicon carbide high thermal conductive substrate material for high power module as claimed in claim 1, is characterized in that: in the 3rd step, mold preheating temperature is 400～800 ℃.
4. the preparation method of aluminium silicon carbide high thermal conductive substrate material for high power module as claimed in claim 1, it is characterized in that: in the 3rd step, the mode of exerting pressure is hydraulic pressure or air pressure, and applied pressure value is 5MPa～40MPa, and be 1～10min pressing time.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104658920A (en) * | 2015-02-04 | 2015-05-27 | 湖南浩威特科技发展有限公司 | Preparation method for aluminum silicon carbide, aluminum silicon carbide obtained with method and electronic component packaging substrate |
| CN105006471A (en) * | 2015-07-01 | 2015-10-28 | 西安永电电气有限责任公司 | Igbt module and welding method |
| CN105014044A (en) * | 2015-07-03 | 2015-11-04 | 洛阳西格马炉业股份有限公司 | High-melting-point metal-coated ceramic fragment material and preparation method thereof |
| CN105924178A (en) * | 2016-04-18 | 2016-09-07 | 湖南浩威特科技发展有限公司 | Preparation method of aluminum-silicon carbide composite material |
| US10022786B2 (en) | 2015-09-10 | 2018-07-17 | Southwire Company | Ultrasonic grain refining |
| US10233515B1 (en) | 2015-08-14 | 2019-03-19 | Southwire Company, Llc | Metal treatment station for use with ultrasonic degassing system |
| US10316387B2 (en) | 2013-11-18 | 2019-06-11 | Southwire Company, Llc | Ultrasonic probes with gas outlets for degassing of molten metals |
| CN110066937A (en) * | 2019-05-30 | 2019-07-30 | 西安创正新材料有限公司 | A kind of high intensity, the preparation method of high-modulus, high-ductility ceramic particle aluminum matrix composite |
| US10441999B2 (en) | 2015-02-09 | 2019-10-15 | Hans Tech, Llc | Ultrasonic grain refining |
| US10640846B2 (en) | 2010-04-09 | 2020-05-05 | Southwire Company, Llc | Ultrasonic degassing of molten metals |
| CN111138198A (en) * | 2019-12-30 | 2020-05-12 | 珠海凯利得新材料有限公司 | Preparation method and application of aluminum silicon carbide composite material |
| CN113549792A (en) * | 2021-07-13 | 2021-10-26 | 珠海亿特立新材料有限公司 | Aluminum silicon carbide composite material and method and heat dissipation lining plate |
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Cited By (16)
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|---|---|---|---|---|
| US10640846B2 (en) | 2010-04-09 | 2020-05-05 | Southwire Company, Llc | Ultrasonic degassing of molten metals |
| US10316387B2 (en) | 2013-11-18 | 2019-06-11 | Southwire Company, Llc | Ultrasonic probes with gas outlets for degassing of molten metals |
| CN104658920A (en) * | 2015-02-04 | 2015-05-27 | 湖南浩威特科技发展有限公司 | Preparation method for aluminum silicon carbide, aluminum silicon carbide obtained with method and electronic component packaging substrate |
| CN104658920B (en) * | 2015-02-04 | 2017-04-26 | 湖南浩威特科技发展有限公司 | Preparation method for aluminum silicon carbide, aluminum silicon carbide obtained with method and electronic component packaging substrate |
| US10441999B2 (en) | 2015-02-09 | 2019-10-15 | Hans Tech, Llc | Ultrasonic grain refining |
| CN105006471B (en) * | 2015-07-01 | 2019-05-10 | 西安中车永电电气有限公司 | A kind of IGBT module and welding method |
| CN105006471A (en) * | 2015-07-01 | 2015-10-28 | 西安永电电气有限责任公司 | Igbt module and welding method |
| CN105014044A (en) * | 2015-07-03 | 2015-11-04 | 洛阳西格马炉业股份有限公司 | High-melting-point metal-coated ceramic fragment material and preparation method thereof |
| US10233515B1 (en) | 2015-08-14 | 2019-03-19 | Southwire Company, Llc | Metal treatment station for use with ultrasonic degassing system |
| US10022786B2 (en) | 2015-09-10 | 2018-07-17 | Southwire Company | Ultrasonic grain refining |
| US10639707B2 (en) | 2015-09-10 | 2020-05-05 | Southwire Company, Llc | Ultrasonic grain refining and degassing procedures and systems for metal casting |
| CN105924178B (en) * | 2016-04-18 | 2018-06-19 | 湖南浩威特科技发展有限公司 | The preparation method of aluminum silicon carbide composite material |
| CN105924178A (en) * | 2016-04-18 | 2016-09-07 | 湖南浩威特科技发展有限公司 | Preparation method of aluminum-silicon carbide composite material |
| CN110066937A (en) * | 2019-05-30 | 2019-07-30 | 西安创正新材料有限公司 | A kind of high intensity, the preparation method of high-modulus, high-ductility ceramic particle aluminum matrix composite |
| CN111138198A (en) * | 2019-12-30 | 2020-05-12 | 珠海凯利得新材料有限公司 | Preparation method and application of aluminum silicon carbide composite material |
| CN113549792A (en) * | 2021-07-13 | 2021-10-26 | 珠海亿特立新材料有限公司 | Aluminum silicon carbide composite material and method and heat dissipation lining plate |
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