CN102628137A - Method for preparing silicon carbide particle reinforced aluminum-based composites - Google Patents
Method for preparing silicon carbide particle reinforced aluminum-based composites Download PDFInfo
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- CN102628137A CN102628137A CN2012101202425A CN201210120242A CN102628137A CN 102628137 A CN102628137 A CN 102628137A CN 2012101202425 A CN2012101202425 A CN 2012101202425A CN 201210120242 A CN201210120242 A CN 201210120242A CN 102628137 A CN102628137 A CN 102628137A
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Abstract
The invention discloses a method for preparing silicon carbide particle reinforced aluminum-based composites. The method comprises the steps: (a) using silicon carbide particles (SiCp) of different particle diameters according to a volume ratio of 1:1-2:1 to obtain mixed silicon carbide particles, adding the mixed silicon carbide particles to a mixer and stirring for 1-3.5 hours; (b) adding binder and pore-forming agent to the silicon carbide particle mixtures of different particle diameters, uniformly stirring; (c) delivering the silicon carbide particles on a press to obtain preforms by pressing, drying and preserving the preforms at a temperature of 80-120 DEG C; (d) pre-sinttering the SiCp mixture performs to obtain SiCp blanks; (e) removing impurities of the SiCp blanks, carrying out preoxidation for 1-2.5 hours at constant temperature of 1000-1100 DEG C; and (f) changing aluminum alloy in such a way: placing aluminum matrix material and the SiCp blanks together, adopting a free-infiltration method and maintaining the temperature for 2-4 hours to obtain the silicon carbide particle reinforced aluminum matrix composites. The preparation technology in the invention is simple, with a low cost and is easy to be realized.
Description
Technical field
The present invention relates to a kind of method for preparing enhancing aluminum-base composite material by silicon carbide particles.
Background technology
Excellent comprehensive performances such as SiC particle-reinforced Al matrix (SiCp/Al) matrix material has that HS, high-modulus, high thermal conductivity connect, thermal expansivity is low, in light weight, cost performance height; In aerospace, optics, Electronic Packaging, fields such as sports equipment have broad application prospects.Its principal feature is to obtain the ideal over-all properties through adjustment SiC particulate content; As replace beryllium, titanium and glass to make lightweight mirror base material, gimbal, inertial platform etc. with it abroad; Measure encapsulation and heat sink member on the array at indicating meter, electronic counting, be applied in tank fire control system, infrared detection system, air-based laser system, mirror image infrared guidance, ultra-light space telescope, the satellite navigation system.The preparation method of SiCp/Al matrix material mainly contains pressureless penetration method and vacuum infiltration method etc., prepares the metal-base composites of different volumes mark SiCp through adopting the prefabricated blank of silicon-carbide particle.Because the wellability of SiCp particle and Al matrix is relatively poor; The matrix material of preparing is difficult to the infiltration fully of realizing ideal; The compactness of matrix material is relatively poor; Density is difficult to reach fully evenly, and composite inner is difficult to eliminate micropore, harmful defectives such as phase, internal stress are big, matrix material good comprehensive performances that weakens greatly of being mingled with.
Summary of the invention
The object of the present invention is to provide a kind of method for preparing enhancing aluminum-base composite material by silicon carbide particles, it can prepare dense structure, strengthens the SiCp/Al matrix material of body even particle distribution.
The present invention realizes like this, a kind of method for preparing enhancing aluminum-base composite material by silicon carbide particles, and said method comprises:
(a) adopt the silicon-carbide particle (SiCp) of different-grain diameter, according to the volume ratio of 1:1-2:1, obtains the different particle diameters and the hybrid silicon carbide particle of volume ratio, put in the stirrer stirring 1-3.5 hour, in the hope of obtaining uniform composite grain;
(b) sticker and pore-forming material are joined in the silicon-carbide particle mixture of different-grain diameter, stir;
The silicon-carbide particle that (c) will contain sticker and pore-forming material is put into the precast billet that suppresses desired shape on the press, and oven dry is preserved in 80-120 ℃ kiln;
(d) SiCp mixture precast billet is carried out presintering, obtain SiCp blank with specific pore rate;
(e) with the SiCp blank removal of impurities after the pre-burning, and 1000-1100 ℃ of insulation preoxidation in 1-2.5 hour down;
(f) aluminum substrate material and SiCp blank are put together, adopt free method of impregnation, be incubated 2-4 hour, prepare enhancing aluminum-base composite material by silicon carbide particles.
The SiCp particle of the different-grain diameter of described configuration can be two kinds of different-grain diameters, according to the 1:1-2:1 proportion relation mix.Also can be the mixing of three kinds of different-grain diameters, mix according to the 1:1:1 proportion relation.
Described SiCp particle diameter is between 70#-180#.
Described aluminum substrate material is 1063,2024,, wherein a kind of of ZL301, ZL101.
Described sticker is wherein a kind of of StNa, paraffin, silicon sol.
Described pore-forming material is starch, Triple Pressed Stearic Acid, graphite.
Said preoxidation temperature is 1000-1100 ℃.
Technique effect of the present invention is: preparation technology is simple, cost is low, is easy to realize; The present invention has overcome the bad problem that the prior art for preparing enhancing aluminum-base composite material by silicon carbide particles exists; Through sectional presintering and preoxidation; Silicon-carbide particle obtains sufficient preoxidation; Eliminate sticker and the weighting agent in the precast billet fully, increased the open degree of hole; Mix through varigrained silicon-carbide particle proportioning; And through fully oxidation; Improved the wellability of silicon-carbide particle and aluminum substrate effectively, prepared the microstructure of composite compact structure, silicon-carbide particle is evenly distributed in matrix; Do not have and to gather phenomenon partially, have good comprehensive performances such as high thermal conductivity, high Young's modulus and dimensional stability are good.
Embodiment
Embodiment 1: preparation SiC grain volume fraction is 50% enhancing aluminum-base composite material by silicon carbide particles
Adopting particle diameter respectively is the carborundum powder of 70#, 180#, and 1:1 mixes by volume, according to the volume of silit, presses silit: sticker: pore-forming material volume ratio 8:3:2; The sticker that adds is a StNa, and pore-forming material is a starch, puts in the stirrer, under 80-100 ℃ of temperature; Stirred 1.5 hours, and obtained even silit composite grain, put in the mould of pressing machine; Under the pressure of 50-200MP, the precast billet volume is also calculated in control, behind the satisfied aluminium liquid that freely infiltrates; The volume(tric)fraction of aluminum substrate is 50%, suppresses the precast billet of desired shape, and oven dry is preserved in 80-120 ℃ kiln.Silicon-carbide particle precast billet after the compacting is placed in the air atmosphere stove,, is heated to 320 ℃, be incubated 1.8 hours with stove with the heating rate of 3.2 ℃/min; Be heated to 830 ℃ with the heating rate of 3.5 ℃/min more at once, be incubated 2 hours, in order to obtain the abundant oxidation of SiC particle surface; Then continue to be warmed up to 1050 ℃, be incubated 1.8 hours, carry out preoxidation with the speed of 4.0 ℃/min; At last the silit precast billet of treated mistake is put in the molten aluminum liquid, aluminum substrate is got ZL101, in 1080 ℃ air atmosphere stove; Carry out freely infiltrating, and be incubated 3.0 hours, obtain the enhancing aluminum-base composite material by silicon carbide particles of compact structure, homogeneous microstructure.
Embodiment 2: preparation SiC grain volume fraction is 60% enhancing aluminum-base composite material by silicon carbide particles
Adopt respectively particle diameter be 70#, 150#, carborundum powder, 1:2 mixes by volume, according to the volume of silit, presses silit: sticker: pore-forming material volume ratio 7:2:3; The sticker that adds is a paraffin, and pore-forming material is a Triple Pressed Stearic Acid, puts in the stirrer, under 80-100 ℃ of temperature; Stirred 2.0 hours, and obtained even silit composite grain, put in the mould of pressing machine; Under the pressure of 50-200MP, the precast billet volume is also calculated in control, behind the satisfied aluminium liquid that freely infiltrates; The volume(tric)fraction of aluminum substrate is 40%, suppresses the precast billet of desired shape, and oven dry is preserved in 80-120 ℃ kiln.Silicon-carbide particle precast billet after the compacting is placed in the air atmosphere stove,, is heated to 350 ℃, be incubated 1.5 hours with stove with the heating rate of 3.1 ℃/min; Be heated to 835 ℃ with the heating rate of 3.8 ℃/min more at once, be incubated 2.2 hours, in order to obtain the abundant oxidation of SiC particle surface; Then continue to be warmed up to 1060 ℃, be incubated 2.0 hours, carry out preoxidation with the speed of 4.5 ℃/min; At last the silit precast billet of treated mistake is put in the molten aluminum liquid, aluminum substrate is 2024, in 1060 ℃ air atmosphere stove; Carry out freely infiltrating, and be incubated 3.5 hours, obtain the enhancing aluminum-base composite material by silicon carbide particles of compact structure, homogeneous microstructure.
Embodiment 3: preparation SiC grain volume fraction is 45% enhancing aluminum-base composite material by silicon carbide particles
Adopting particle diameter respectively is the carborundum powder of 100#, 150#, and 2:1 mixes by volume, according to the volume of silit, presses silit: sticker: pore-forming material volume ratio 9:4:2; The sticker that adds is a silicon sol, and pore-forming material is a graphite, puts in the stirrer, under 80-100 ℃ of temperature; Stirred 1.2 hours, and obtained even silit composite grain, put in the mould of pressing machine; Under the pressure of 50-200MP, the precast billet volume is also calculated in control, behind the satisfied aluminium liquid that freely infiltrates; The volume(tric)fraction of aluminum substrate is 55%, suppresses the precast billet of desired shape, and oven dry is preserved in 80-120 ℃ kiln.Silicon-carbide particle precast billet after the compacting is placed in the air atmosphere stove,, is heated to 400 ℃, be incubated 2.0 hours with stove with the heating rate of 3.5 ℃/min; Be heated to 830 ℃ with the heating rate of 4.5 ℃/min more at once, be incubated 1.8 hours, in order to obtain the abundant oxidation of SiC particle surface; Then continue to be warmed up to 1050 ℃, be incubated 2.0 hours, carry out preoxidation with the speed of 5 ℃/min; At last the silit precast billet of treated mistake is put in the molten aluminum liquid, aluminum substrate is 1060, in 1080 ℃ air atmosphere stove; Carry out freely infiltrating, and be incubated 2.6 hours, obtain the enhancing aluminum-base composite material by silicon carbide particles of compact structure, homogeneous microstructure.
Preparation SiC grain volume fraction is 66% enhancing aluminum-base composite material by silicon carbide particles
Adopting particle diameter respectively is the carborundum powder of 70#, 100#, 150#, and 1:1:1 mixes by volume, according to the volume of silit, presses silit: sticker: pore-forming material volume ratio 9:4:5; The sticker that adds is a paraffin, and pore-forming material is a starch, puts in the stirrer, under 80-100 ℃ of temperature; Stirred 3 hours, and obtained even silit composite grain, put in the mould of pressing machine; Under the pressure of 50-200MP, the precast billet volume is also calculated in control, behind the satisfied aluminium liquid that freely infiltrates; The volume(tric)fraction of aluminum substrate is 34%, suppresses the precast billet of desired shape, and oven dry is preserved in 80-120 ℃ kiln.Silicon-carbide particle precast billet after the compacting is placed in the air atmosphere stove,, is heated to 300 ℃, be incubated 2.4 hours with stove with the heating rate of 3.0 ℃/min; Be heated to 860 ℃ with the heating rate of 3.5 ℃/min more at once, be incubated 2.5 hours, in order to obtain the abundant oxidation of SiC particle surface; Then continue to be warmed up to 1050 ℃, be incubated 2.4 hours, carry out preoxidation with the speed of 4.5 ℃/min; At last the silit precast billet of treated mistake is put in the molten aluminum liquid, aluminum substrate is ZL101, in 1090 ℃ air atmosphere stove; Carry out freely infiltrating, and be incubated 3.6 hours, obtain the enhancing aluminum-base composite material by silicon carbide particles of compact structure, homogeneous microstructure.
Claims (7)
1. a method for preparing enhancing aluminum-base composite material by silicon carbide particles is characterized in that, said method comprises:
(a) silicon-carbide particle of employing different-grain diameter according to the volume ratio of 1:1-2:1, obtains the different particle diameters and the hybrid silicon carbide particle of volume ratio, puts in the stirrer and stirs 1-3.5 hour, in the hope of obtaining uniform composite grain;
(b) sticker and pore-forming material are joined in the silicon-carbide particle mixture of different-grain diameter, stir;
The silicon-carbide particle that (c) will contain sticker and pore-forming material is put into the precast billet that suppresses desired shape on the press, and oven dry is preserved in 80-120 ℃ kiln;
(d) SiCp mixture precast billet is carried out presintering, obtain to have the SiCp blank that porosity is 45-60%;
(e) with the SiCp blank removal of impurities after the pre-burning, and 1000-1100 ℃ of insulation preoxidation in 1-2.5 hour down;
(f) aluminum substrate material and SiCp blank are put together, adopt free method of impregnation, be incubated 2-4 hour, prepare enhancing aluminum-base composite material by silicon carbide particles.
2. a kind of according to claim 1 method for preparing enhancing aluminum-base composite material by silicon carbide particles; It is characterized in that: the SiCp particle of the different-grain diameter that is disposed can be two kinds of different-grain diameters; According to the 1:1-2:1 proportion relation mix; Also can be the mixing of three kinds of different-grain diameters, mix according to the 1:1:1 proportion relation.
3. a kind of according to claim 1 method for preparing enhancing aluminum-base composite material by silicon carbide particles is characterized in that: described SiCp particle diameter is between 70#-180#.
4. a kind of according to claim 1 method for preparing enhancing aluminum-base composite material by silicon carbide particles is characterized in that: described aluminum substrate material is 1063,2024,, wherein a kind of of ZL301, ZL101.
5. a kind of according to claim 1 method for preparing enhancing aluminum-base composite material by silicon carbide particles is characterized in that: described sticker is wherein a kind of of StNa, paraffin, silicon sol.
6. a kind of according to claim 1 method for preparing enhancing aluminum-base composite material by silicon carbide particles is characterized in that: described pore-forming material is starch, Triple Pressed Stearic Acid, graphite.
7. a kind of according to claim 1 method for preparing enhancing aluminum-base composite material by silicon carbide particles is characterized in that: said preoxidation temperature is 1000-1100 ℃.
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| CN103194630A (en) * | 2013-04-01 | 2013-07-10 | 兰州理工大学 | Preparation method of SiCp/Al composite material with high volume fraction |
| CN103949613A (en) * | 2014-03-12 | 2014-07-30 | 江苏时代华宜电子科技有限公司 | Method for preparing alumino-silicon-carbide high-thermal-conductivity substrate material for high-power module |
| CN104073674A (en) * | 2014-06-20 | 2014-10-01 | 哈尔滨翔科新材料有限公司 | Preparation method of graphene aluminum-based composite material |
| CN104498778A (en) * | 2014-12-15 | 2015-04-08 | 中国兵器科学研究院宁波分院 | Aluminium-based composite material with high silicon carbide content and preparation method of composite material |
| CN105788891A (en) * | 2016-04-29 | 2016-07-20 | 河南省豫星华晶微钻有限公司 | High-wearing-resistance high-heat-conductivity electrical contact based on 3D printing technology and preparation process thereof |
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| CN107150122A (en) * | 2017-05-05 | 2017-09-12 | 孝感双华应用科技开发有限公司 | A kind of preparation method of lightweight aluminum matrix composite |
| CN109563002A (en) * | 2017-10-27 | 2019-04-02 | 深圳市大富科技股份有限公司 | The preparation method of silicon carbide aluminum-base composite structural member and SiC reinforcement prefabricated component |
| WO2019080103A1 (en) * | 2017-10-27 | 2019-05-02 | 深圳市大富科技股份有限公司 | Aluminum silicon carbide-based composite structural member and method for preparing silicon carbide reinforced preform |
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| CN112111667A (en) * | 2020-09-23 | 2020-12-22 | 北京钢研新冶精特科技有限公司 | Aluminum-based silicon carbide composite material and preparation method thereof |
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Application publication date: 20120808 |