CN103943739B - Improve the preparation method of light extraction efficiency light emitting diode - Google Patents
Improve the preparation method of light extraction efficiency light emitting diode Download PDFInfo
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- CN103943739B CN103943739B CN201410185391.9A CN201410185391A CN103943739B CN 103943739 B CN103943739 B CN 103943739B CN 201410185391 A CN201410185391 A CN 201410185391A CN 103943739 B CN103943739 B CN 103943739B
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- silicon dioxide
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- gallium nitride
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- emitting diode
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000000605 extraction Methods 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 21
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000004793 Polystyrene Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229920002223 polystyrene Polymers 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 8
- 239000010980 sapphire Substances 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052802 copper Inorganic materials 0.000 claims abstract description 6
- 239000010949 copper Substances 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000002253 acid Substances 0.000 claims abstract description 4
- 229910000365 copper sulfate Inorganic materials 0.000 claims abstract description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims abstract description 4
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 4
- 239000002356 single layer Substances 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims abstract description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920006389 polyphenyl polymer Polymers 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of preparation method improving light extraction efficiency light emitting diode, including: on the p-type gallium nitride layer of a gallium nitride based LED epitaxial wafer upper surface with Sapphire Substrate, make a compact arranged polystyrene spheres of monolayer；Silica dioxide gel is filled at polystyrene sphere gap；High-temperature heating, forms the bowl-shape array of silicon dioxide；A part for bowl-shape for silicon dioxide array is covered photoresist protect；Unprotected silicon dioxide is removed clean, then removing photoresist with stripper；At the surface of the residue bowl-shape array of silicon dioxide and p-type gallium nitride layer evaporation reflective metal thin film, select acid copper sulfate baths at the upper surface plated metal copper of conductive film；Use laser lift-off technique to remove the Sapphire Substrate in epitaxial wafer, expose the surface of the n type gallium nitride layer of p-type gallium nitride layer another side；Depositing metallic film by photoetching technique, electron beam evaporation technique and metal lift-off techniques on the surface of n type gallium nitride layer, as N electrode, position corresponds exactly to the bowl-shape array of silicon dioxide of lower section, completes preparation.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly a kind of raising light extraction efficiency light emitting diode
Preparation method.
Background technology
In Light-Emitting Diode, metal electrode is low to the transmitance of light, and the light sent from SQW mainly collects
In under the electrodes side, therefore, substantial amounts of light is absorbed by the electrode the outside being unable to be extracted to chip.
How reducing the light that SQW sends to be absorbed by the electrode and causing light loss is a heat of research at present
Point, prior art uses current barrier layer technology, and electric current deflects from electrode, reduces what SQW sent
Light is absorbed by the electrode or uses metal material that reflectance is higher as electrode, increases reflectance, this
Bright in original technical foundation, propose a kind of new method further reduce the electrode absorption to light,
Improve the light extraction efficiency of device.
Summary of the invention
It is an object of the invention to, it is provided that a kind of preparation side improving light extraction efficiency light emitting diode
Method, it can further reduce the electrode absorption to light, can improve the light extraction efficiency of device.
The present invention provides a kind of preparation method improving light extraction efficiency light emitting diode, including walking as follows
Rapid:
Step 1: the p-type at a gallium nitride based LED epitaxial wafer upper surface with Sapphire Substrate nitrogenizes
A compact arranged polystyrene spheres of monolayer is made on gallium layer；
Step 2: fill silica dioxide gel at polystyrene sphere gap；
Step 3: high-temperature heating, makes polystyrene spheres gasify, and forms the bowl-shape array of silicon dioxide；
Step 4: by photoetching process, a part for bowl-shape for silicon dioxide array is covered photoresist and carry out
Protection；BOE solution processes, unprotected silicon dioxide is removed clean, then with striping
Photoresist is removed in agent；
Step 5: be deposited with reflective gold on the surface of the residue bowl-shape array of silicon dioxide and p-type gallium nitride layer
Belong to thin film, select acid copper sulfate baths at the upper surface plated metal copper of conductive film；
Step 6: use laser lift-off technique to remove the Sapphire Substrate in epitaxial wafer, expose p-type nitrogen
Change the surface of the n type gallium nitride layer of gallium layer another side；
Step 7: nitrogenized in N-type by photoetching technique, electron beam evaporation technique and metal lift-off techniques
The surface deposition metallic film of gallium layer, as N electrode, position corresponds exactly to the silicon dioxide of lower section
Bowl-shape array, completes preparation.
The invention has the beneficial effects as follows, it is that the specific region immediately below metal electrode makes reflective song
The face suppression electrode absorption to light, the electric current simultaneously strengthening N electrode peripheral region injects, and is conducive to electricity
Stream extension, increases luminous intensity, improves the light extraction efficiency of device.
Accompanying drawing explanation
For making auditor can further appreciate that the structure of the present invention, feature and purpose thereof, below in conjunction with attached
After the detailed description of figure and preferred embodiment such as, wherein:
Fig. 1 is the preparation method flow chart of the present invention.
Fig. 2 is that the present invention arranges polystyrene (PS) ball at p-type gallium nitride layer, fills out silicon dioxide
Sectional view after gel；
Fig. 3 is that the present invention removes part of silica bowl structure, and evaporation conduction illuminator also shifts copper
Substrate the schematic diagram after making N electrode.
Detailed description of the invention
Referring to Fig. 1, coordinate refering to shown in Fig. 2 Fig. 3, the present invention provides a kind of light that improves to carry
Take the preparation method of efficiency light emission diode, specifically include following steps:
Step 1: at the p-type nitrogen of a gallium nitride based LED epitaxial wafer upper surface with Sapphire Substrate 2
Changing on gallium layer 1, mix with the ratio of 2: 3 with PS (granules of polystyrene solution) and ethanol, employing carries
Machine drawing makes a compact arranged polystyrene spheres of monolayer 3, polystyrene spheres 3 a diameter of 1-10 μm；
Step 2: filling silica dioxide gel 4 at polystyrene sphere gap, concrete grammar is to use whirl coating
Machine spin coating, 1000-8000 turns/min, and the time is 10-30s, makes silica dioxide gel 4 in polyphenyl second
Alkene ball 3 gap is filled；
Step 3: high-temperature heating, about temperature 400-600 DEG C, the time is 10-30min, makes polyphenyl
Ethylene ball gasifies, and forms the bowl-shape array of silicon dioxide；
Step 4: by photoetching process, a part for bowl-shape for silicon dioxide array is covered photoresist and carry out
Protection；BOE solution processes, unprotected silicon dioxide is removed clean, then with striping
Photoresist is removed in agent；
Step 5: evaporation is reflective on the surface of the residue bowl-shape array of silicon dioxide and p-type gallium nitride layer 1
Metallic film, selects acid copper sulfate baths in upper surface plated metal copper 5 conduct of conductive film
Transfer substrate, wherein the material of reflective metal thin film is nickel, silver, platinum, palladium or gold, or and combinations thereof,
Transfer substrate is copper, copper-tungsten alloy, nickel or silicon, and the thickness of transfer substrate is in 50 μm to 1000
Between μm；
Step 6: use laser lift-off technique to remove the Sapphire Substrate 2 in epitaxial wafer, expose p-type
The surface 6 of the n type gallium nitride layer of gallium nitride layer 1 another side；
Step 7: nitrogenized in N-type by photoetching technique, electron beam evaporation technique and metal lift-off techniques
The surface 6 of gallium layer deposits metallic film, and as N electrode 7, position corresponds exactly to the dioxy of lower section
The bowl-shape array of SiClx, completes preparation.This design not only increases the electrode reflection to light, strengthens simultaneously
The electric current of N electrode peripheral region injects, beneficially current expansion, increases luminous intensity, wherein N electricity
Pole 8 is metal electrode, and its width is 5-10 micron.
Additionally, said method be not limited only to embodiment is mentioned in vertical structure light-emitting diode
Application, it is an object of the invention to reduce electricity Auroral absorption and adversely affect going out light, all at this
Within bright spirit and principle, any modification, equivalent substitution and improvement etc. done, should be included in
Within protection scope of the present invention.
Claims (5)
1. improve a preparation method for light extraction efficiency light emitting diode, comprise the steps:
Step 1: the p-type at a gallium nitride based LED epitaxial wafer upper surface with Sapphire Substrate nitrogenizes
A compact arranged polystyrene spheres of monolayer is made on gallium layer；
Step 2: fill silica dioxide gel at polystyrene sphere gap；
Step 3: heating, makes polystyrene spheres gasify, and forms the bowl-shape array of silicon dioxide；
Step 4: by photoetching process, a part for bowl-shape for silicon dioxide array is covered photoresist and carry out
Protection；BOE solution processes, unprotected silicon dioxide is removed clean, then with striping
Photoresist is removed in agent；
Step 5: be deposited with reflective gold on the surface of the residue bowl-shape array of silicon dioxide and p-type gallium nitride layer
Belong to thin film, select acid copper sulfate baths at the upper surface plated metal copper of conductive film；
Step 6: use laser lift-off technique to remove the Sapphire Substrate in epitaxial wafer, expose p-type nitrogen
Change the surface of the n type gallium nitride layer of gallium layer another side；
Step 7: nitrogenized in N-type by photoetching technique, electron beam evaporation technique and metal lift-off techniques
The surface deposition metallic film of gallium layer, as N electrode, position corresponds exactly to the silicon dioxide of lower section
Bowl-shape array, completes preparation.
2. the preparation method improving light extraction efficiency light emitting diode as claimed in claim 1, its
The a diameter of 1-10um of middle polystyrene spheres.
3. the preparation method improving light extraction efficiency light emitting diode as claimed in claim 1, its
Middle heating, temperature is 400-600 DEG C, and the time is 10-30min, makes polystyrene spheres gasify, obtains
Bowl-shape array silicon dioxide.
4. the preparation method improving light extraction efficiency light emitting diode as claimed in claim 1, its
The width of middle metal electrode is 5-10 micron.
5. the preparation method improving light extraction efficiency light emitting diode as claimed in claim 1, its
The material of middle reflective metal thin film is nickel, silver, platinum, palladium or gold, or and combinations thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410185391.9A CN103943739B (en) | 2014-05-04 | 2014-05-04 | Improve the preparation method of light extraction efficiency light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410185391.9A CN103943739B (en) | 2014-05-04 | 2014-05-04 | Improve the preparation method of light extraction efficiency light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103943739A CN103943739A (en) | 2014-07-23 |
| CN103943739B true CN103943739B (en) | 2016-09-14 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8076667B2 (en) * | 2006-12-24 | 2011-12-13 | Lehigh University | Efficient light extraction method and device |
| CN101826587B (en) * | 2010-04-23 | 2012-10-17 | 山东大学 | Preparation method of polystyrene semispheres used as microlenses for improving LED light outlet efficiency |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7052355B2 (en) * | 2003-10-30 | 2006-05-30 | General Electric Company | Organic electro-optic device and method for making the same |
| CN101521251A (en) * | 2008-02-28 | 2009-09-02 | 杭州士兰明芯科技有限公司 | Manufacturing method of light-emitting diode (LED) with vertical structure |
| CN102593280B (en) * | 2012-01-11 | 2014-12-24 | 中山大学 | LED (Light Emitting Diode) surface patterning method |
| CN102646764B (en) * | 2012-04-25 | 2014-07-16 | 清华大学 | Overall wet chemical preparation method for nanoscale patterning sapphire substrate |
| CN102691102A (en) * | 2012-06-04 | 2012-09-26 | 中国科学院半导体研究所 | Method for manufacturing substrate of sapphire nanometer bowl array pattern |
| CN102683522B (en) * | 2012-06-04 | 2014-11-19 | 中国科学院半导体研究所 | Manufacture method of light-emitting diode with air bridge structure |
| CN102709410B (en) * | 2012-06-04 | 2014-08-27 | 中国科学院半导体研究所 | Method for manufacturing nanometer column LED (Light Emitting Diode) |
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2014
- 2014-05-04 CN CN201410185391.9A patent/CN103943739B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8076667B2 (en) * | 2006-12-24 | 2011-12-13 | Lehigh University | Efficient light extraction method and device |
| CN101826587B (en) * | 2010-04-23 | 2012-10-17 | 山东大学 | Preparation method of polystyrene semispheres used as microlenses for improving LED light outlet efficiency |
Non-Patent Citations (1)
| Title |
|---|
| Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography;吴奎； 魏同波； 蓝鼎； 郑海洋； 王军喜； 罗毅； 李晋闽；;《Chinese Physics B》;20140228;第23卷(第2期);570-573 * |
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| CN103943739A (en) | 2014-07-23 |
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