CN103943670A - Super-junction collector region strained silicon heterojunction bipolar transistor - Google Patents
Super-junction collector region strained silicon heterojunction bipolar transistor Download PDFInfo
- Publication number
- CN103943670A CN103943670A CN201410146902.6A CN201410146902A CN103943670A CN 103943670 A CN103943670 A CN 103943670A CN 201410146902 A CN201410146902 A CN 201410146902A CN 103943670 A CN103943670 A CN 103943670A
- Authority
- CN
- China
- Prior art keywords
- collector region
- chao
- region
- strain
- zhu district
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010703 silicon Substances 0.000 title claims abstract description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 33
- 239000000470 constituent Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 12
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Abstract
The invention discloses a strained silicon heterojunction bipolar transistor, and particularly relates to a super-junction collector region strained silicon heterojunction bipolar transistor which has large current gains and high breakdown voltages at the same time. The transistor is of a SiGe virtual substrate structure, a super-junction structure where n type column areas and p type column areas are alternatively arranged is introduced into a relaxation SiGe collector region, and a strain SiGe base region and a strain Si emitting region respectively and epitaxially grow in the relaxation SiGe collector region. According to the transistor, the strain SiGe base region epitaxially grows in the relaxation SiGe collector region, the content of Ge in the SiGe collector region can be effectively increased, a band gap difference between the emitting region and the base region is increased, and the purposes of improving emitting efficiency and the device current gains are achieved. Meanwhile, according to the transistor, the super-junction structure is adopted in the collector region, a transverse electric field can be introduced, electric field distribution of the collector region is improved, and the purpose of increasing the device breakdown voltage is achieved. Compared with a conventional power heterojunction bipolar transistor, the transistor keeps excellent high-frequency characteristics, the current gains are increased, the breakdown voltage is higher, and the application of the heterojunction bipolar transistor in the radio frequency and microwave power field can be effectively expanded.
Description
Technical field
The present invention relates to strain silicon heterojunction bipolar transistor, especially for the super knot collector region strain silicon heterojunction bipolar transistor with the large current gain of high-breakdown-voltage of the high-power RFs such as power amplifier, GPS navigation navigation system, mobile communication system, the automatic monitoring of traffic system and microwave regime.
Background technology
SiGe heterojunction bipolar transistor (heterojunction bipolar transistor, HBT) in thering is high current handling capability, large current gain and high early voltage, also there is excellent high frequency characteristics, be now widely used in the radio frequencies such as mobile telephone system, bluetooth, satellite navigation system, phased array antenna system, car radar and microwave circuit.Particularly, along with the General Promotion of the 4th generation SiGe technique, SiGe HBT will play the part of more and more important role in Asia-Pacific hertz (>500GHz) applications such as millimetre-wave radar, Gb/s level WLAN (wireless local area network) (WLAN) and 100Gb/s Ethernet.
SiGe HBT adopts " energy band engineering " to introduce Ge component in base, make base energy gap be less than emitter region energy gap, now injection efficiency is decided by emitter region and base doping concentration ratio no longer merely, and mainly decided by the forbidden band energy difference of emitter region and base, therefore device can obtain higher current gain, can adopt base heavy doping to obtain better frequency characteristic simultaneously.But conventional SiGe HBT is grown on Si substrate conventionally, for certain thickness base, along with the increase of Ge component, base energy gap (E
g) will further reduce, the stress that is simultaneously grown in the SiGe epitaxial loayer on Si substrate also will increase thereupon, and in the time exceeding its limit stress, Si atom and Ge atom are by the dislocation of generation mismatch and then cause lattice defect, degeneration device performance, therefore the raising of device current gain will be restricted.In addition, along with the raising of SiGe HBT characteristic frequency, the puncture voltage of device declines thereupon, thereby causes the power output of device and the signal to noise ratio of radio system to reduce, and this has seriously limited the microwave power application of SiGe HBT.Therefore, how to design a kind of power SiGe HBT that has large current gain, high-breakdown-voltage concurrently towards the application of microwave high power field and there is important theoretical and practical significance.
Summary of the invention
The invention discloses the bipolar brilliant pipe of a kind of super knot collector region strain silicon heterojunction.
A kind of super knot collector region strain silicon heterojunction bipolar transistor, is characterized in that:
Comprise SiGe virtual substrate (10), relaxation Si
1-yge
yinferior collector region (11), relaxation Si
1-yge
ycollector region (12), Chao JienXing Zhu district (13), Chao JiepXing Zhu district (14), eigenstrain Si
1-xge
xresilient coating (15), strain Si
1-xge
xbase (16), strain Si emitter region (18);
Described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) are positioned at described relaxation Si
1-yge
yregion, collector region in collector region (12) and under corresponding polysilicon layer (19) is described Chao JienXing Zhu district;
In described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) region, collector region under its correspondence of guarantee is answered polysilicon layer (19), in Chao JienXing Zhu district, described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) are along device horizontal direction alternative arrangement;
Described strain Si
1-xge
xge constituent content x in base (16) is greater than described relaxation Si
1-yge
yinferior collector region (11) and described relaxation Si
1-yge
yge constituent content y in collector region (12), and y>0.
Preferably, described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) width and concentration all equate, and the width in described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) is more than or equal to and is positioned at silicon dioxide (SiO
2) width of polysilicon (poly) layer (19) of layer between (20), concentration is less than or equal to relaxation Si
1-yge
ythe impurity concentration of collector region (12).
Preferably, described transistorized strain Si
1-xge
xge constituent content x in base (16) is more than or equal to 0.3, and relaxation Si
1-yge
yinferior collector region (11) and relaxation Si
1-yge
yge constituent content y in collector region (12) need meet 0<y<x.
This transistor adopts " strained silicon technology " to be grown directly upon in SiGe virtual substrate, emitter region adopts stretching strain Si material, base to adopt compressive strain SiGe material to regulate stress to realize the Lattice Matching of emitter region and interface, base simultaneously, and then solve well the contradiction between above-mentioned Ge component and SiGe layer critical thickness, compared with the conventional SiGe HBT being grown under equal conditions on Si substrate, adopt virtual substrate technology can make strain silicium HBT realize higher base Ge component, for the significantly lifting of device current gain brings possibility.
In addition, this transistor is introduced alternatively distributed Chao JienXing Zhu district and Chao JiepXing Zhu district in collector region, and the depletion layer that HepXing Zhu district of adjacent n form post district produces will be introduced transverse electric field, improve collector region Electric Field Distribution, thereby significantly improve the puncture voltage of device.
Compared with conventional SiGe HBT, super knot collector region strain silicium HBT of the present invention has large current gain and high-breakdown-voltage characteristic simultaneously, and has good frequency characteristic, is applicable to frequency microwave high-power applications field.
Brief description of the drawings
The following description carried out by reference to the accompanying drawings, can further understand objects and advantages of the present invention.In these accompanying drawings:
Fig. 1 example the geometry plane graph of the embodiment of the present invention;
Fig. 2 example the current gain of the embodiment of the present invention with the variation relation of collector current;
Fig. 3 example the improvement of the embodiment of the present invention to power device collector region Electric Field Distribution;
Fig. 4 example the embodiment of the present invention to power device puncture voltage BV
cEOimprovement;
Fig. 5 example the embodiment of the present invention to power device puncture voltage BV
cBOimprovement;
Fig. 6 example the characteristic frequency of the embodiment of the present invention with the variation relation of collector current.
Embodiment
The embodiment of the present invention, taking Dan Zhichao knot collector region strain silicium HBT as example, is specifically explained content of the present invention.The field of the present invention relates to is not restricted to this.
Exemplifying embodiment:
The currentgainβ of SiGe HBT mainly determines by the forbidden band energy difference of emitter region and base, and the expression formula of β can be expressed as:
Wherein, W
efor emitter region width, W
bfor base width, D
nBfor base electron diffusion coefficient, D
pEfor emitter region hole diffusion coefficient, N
dEfor emitter region impurity doping content, N
aBfor base impurity doping content, N
vB, N
cBbe respectively base valence band and conduction band available state density, N
vE, N
cEbe respectively emitter region valence band and conduction band available state density, E
gE, E
gBbe respectively the energy gap of emitter region and base, k is Boltzmann Changshu, and q is electron charge, and T is device working temperature.The expression formula of above currentgainβ is applicable equally for the super knot collector region strain silicium HBT of the embodiment of the present invention.
The super knot collector region strain silicium HBT of the embodiment of the present invention, adopt on the one hand virtual substrate technology, epitaxial growth compressive strain SiGe base on relaxation SiGe collector region, efficiently solve the contradiction between Ge component and SiGe layer critical thickness, in the situation that ensureing that C-B knot place stress (x-y) is certain, the more Ge component of high-load can be introduced in base.Compared with conventional SiGe HBT, super knot collector region strain silicium HBT has increased the hole potential barrier (being valence band place band offsets) at E-B knot place, has effectively suppressed the base current (I of inverse injection
pb), improve emitter region injection efficiency.Also can find out from the expression formula of above-mentioned currentgainβ, along with the increase of Ge component in SiGe base, base energy gap E
gBreduce the several E of expression formula middle finger
gE-E
gBincrease, finally make β increase.
On the other hand, consider when SiGe HBT applies in microwave high power field, conventionally require device to possess higher puncture voltage, to ensure higher power output and system signal noise ratio.The embodiment of the present invention, in ensureing that device possesses large current gain, is introduced alternatively distributed Chao JienXing Zhu district and Chao JiepXing Zhu district further to improve the puncture voltage of device in collector region.
Result shows by experiment, the puncture voltage of device reduces and increases with super knot width and concentration, the characteristic frequency of device is reducing and reduce with super knot width and concentration, visible puncture voltage and characteristic frequency are the existence of conflict, designer is in the time designing, can be according to actual needs, suitably regulate super junction parameter to be compromised preferably.
The Chao JienXing Zhu district of the embodiment of the present invention and Chao JiepXing Zhu district are as shown in (13) and (14) in figure (1).In the time that device is in running order, Chao JienXing Zhu district and Chao JiepXing Zhu district ionize respectively the ionized donor and the electronegative ionization acceptor that produce positively charged, thereby produce transverse electric field in collector region, the electric field line of ionized donor is stopped by the ionization acceptor of the contiguous p post in both sides.Impurity in Chao JienXing Zhu district and Chao JiepXing Zhu district exhausts completely, the ionization negative electrical charge in the complete BeipXing Zhu of the ionization positive charge district in nXing Zhu district compensates, due to the mutual compensating action of lateral charge, in the time that the electric field of collector junction reaches breakdown critical value, electric field line and area that reference axis is enclosed increase, therefore, the puncture voltage of device is improved.
In order better to represent the transistorized performance of the present invention, taking the embodiment of the present invention as example, carry out device modeling and process simulation to the embodiment of the present invention with without the strain Si HBT of super-junction structure respectively by commercial semiconductor emulation tool Silvaco TCAD, and extracted relevant electrology characteristic and frequency characteristic.
Fig. 1 example the longitudinal profile structural representation of the embodiment of the present invention, comprising n
+the SiGe virtual substrate (10) of doping, its Ge content fades to 0.15 from 0 gradually; n
+the relaxation Si of doping
1-yge
yinferior collector region (11), its Ge component y=0.15; The relaxation Si of n-doping
1-yge
ycollector region (12), its Ge component y=0.15; Chao JienXing Zhu district (13) and Chao JiepXing Zhu district (14), alternative arrangement is distributed in relaxation Si successively
1-yge
ycollector region (12), super junction depth is 1 μ m, concentration is 5 × 17cm
-3; Eigenstrain Si
1-xge
xresilient coating (15), this layer extends out in order to prevent base impurity; p
+the strain Si of doping
1-xge
xbase (16), its Ge constituent content x=0.3; p
+the SiGe outer base area (17) of doping; The strain Si emitter region (18) of n doping; Polysilicon (poly) layer (19); Silicon dioxide (SiO
2) layer (20); Emitter metal lead-in wire (21); Base metal lead-in wire (22).
Fig. 2 example embodiment of the present invention currentgainβ with collector current I
cthe relation changing, can find out, transistorized current gain of the present invention is up to 1290, and compared with the conventional SiGe HBT reporting, β value significantly improves.
Fig. 3 example embodiment of the present invention collector region Electric Field Distribution, and compare with conventional strain Si HBT.Can find out, compared with conventional strain Si HBT, the collector junction place peak value electric field of the embodiment of the present invention reduces, and electric field line and area that axis of abscissas encloses increase, and now puncture voltage significantly improves.
Fig. 4 example the base current I of the embodiment of the present invention
bwith operating voltage V
cErelation curve, and compare with conventional strain Si HBT.Can find out puncture voltage BV between the open base collector electrode-emitter of the embodiment of the present invention
cEOfor 7.5V, compared with conventional strain Si HBT, BV
cEOimprove 5.3V.
Fig. 5 example the collector current I of the present embodiment
cwith collector junction voltage V
cBrelation curve, and compare with conventional strain Si HBT.Can find out puncture voltage BV between the emitter open collector-base stage of the embodiment of the present invention
cBOfor 30.5V, compared with conventional strain Si HBT, BV
cBOimprove 14.1V.
Fig. 6 example the characteristic frequency of the embodiment of the present invention with collector current I
cchange curve.Can find out the characteristic frequency (f of the embodiment of the present invention
t) peak value reaches 50.6GHz.Result shows, the embodiment of the present invention not only has large current gain and high-breakdown-voltage characteristic, has also kept good frequency characteristic, is conducive to the application of device in frequency microwave power field.
Claims (3)
1. a super knot collector region strain silicon heterojunction bipolar transistor, is characterized in that:
Comprise SiGe virtual substrate (10), relaxation Si
1-yge
yinferior collector region (11), relaxation Si
1-yge
ycollector region (12), Chao JienXing Zhu district (13), Chao JiepXing Zhu district (14), eigenstrain Si
1-xge
xresilient coating (15), strain Si
1-xge
xbase (16), strain Si emitter region (18);
Described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) are positioned at described relaxation Si
1-yge
yregion, collector region in collector region (12) and under corresponding polysilicon layer (19) is described Chao JienXing Zhu district;
In described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) region, collector region under its correspondence of guarantee is answered polysilicon layer (19), in Chao JienXing Zhu district, described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) are along device horizontal direction alternative arrangement;
Described strain Si
1-xge
xge constituent content x in base (16) is greater than described relaxation Si
1-yge
yinferior collector region (11) and described relaxation Si
1-yge
yge constituent content y in collector region (12), and y>0.
2. super knot according to claim 1 collector region strain silicon heterojunction bipolar transistor, it is characterized in that: described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) width and concentration all equate, and the width in described Chao JienXing Zhu district (13) and described Chao JiepXing Zhu district (14) is more than or equal to the width of the polysilicon layer (19) being positioned between silicon dioxide layer (20), and concentration is less than or equal to relaxation Si
1-yge
ythe impurity concentration of collector region (12).
3. super knot according to claim 1 collector region strain silicon heterojunction bipolar transistor, is characterized in that: described strain Si
1-xge
xge constituent content x in base (16) is more than or equal to 0.3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410146902.6A CN103943670B (en) | 2014-04-12 | 2014-04-12 | Superjunction collecting zone strain silicon heterojunction bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410146902.6A CN103943670B (en) | 2014-04-12 | 2014-04-12 | Superjunction collecting zone strain silicon heterojunction bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103943670A true CN103943670A (en) | 2014-07-23 |
| CN103943670B CN103943670B (en) | 2016-10-05 |
Family
ID=51191263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410146902.6A Active CN103943670B (en) | 2014-04-12 | 2014-04-12 | Superjunction collecting zone strain silicon heterojunction bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103943670B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106169498A (en) * | 2016-07-30 | 2016-11-30 | 北京工业大学 | High thermal stability superjunction strain Si/SiGe heterojunction bipolar transistor |
| CN108258032A (en) * | 2018-01-19 | 2018-07-06 | 重庆邮电大学 | A kind of heterojunction bipolar transistor and its manufacturing method using combination emitter region |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080124881A1 (en) * | 2001-01-30 | 2008-05-29 | International Business Machines Corporation | INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY |
| CN101866947A (en) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | Silicon germanium heterojunction bipolar transistor |
| CN101937846A (en) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | SiGe HBT (Heterostructure Bipolar Transistor) and manufacture method thereof |
| US20130207206A1 (en) * | 2011-08-12 | 2013-08-15 | Nxp B.V. | Semiconductor device having au-cu electrodes, and method of manufacturing semiconductor device |
-
2014
- 2014-04-12 CN CN201410146902.6A patent/CN103943670B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080124881A1 (en) * | 2001-01-30 | 2008-05-29 | International Business Machines Corporation | INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY |
| CN101866947A (en) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | Silicon germanium heterojunction bipolar transistor |
| CN101937846A (en) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | SiGe HBT (Heterostructure Bipolar Transistor) and manufacture method thereof |
| US20130207206A1 (en) * | 2011-08-12 | 2013-08-15 | Nxp B.V. | Semiconductor device having au-cu electrodes, and method of manufacturing semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| 刘静、郭飞、高勇: "超结硅锗碳异质结双极晶体管机理研究与特性分析优化", 《物理学报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106169498A (en) * | 2016-07-30 | 2016-11-30 | 北京工业大学 | High thermal stability superjunction strain Si/SiGe heterojunction bipolar transistor |
| CN106169498B (en) * | 2016-07-30 | 2019-03-05 | 北京工业大学 | High thermal stability superjunction strain Si/SiGe heterojunction bipolar transistor |
| CN108258032A (en) * | 2018-01-19 | 2018-07-06 | 重庆邮电大学 | A kind of heterojunction bipolar transistor and its manufacturing method using combination emitter region |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103943670B (en) | 2016-10-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7345310B2 (en) | Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof | |
| CN107342319B (en) | Composite strain Si/SiGe heterojunction bipolar transistor and preparation method thereof | |
| CN100530684C (en) | Abnormal juntion dual-pole transistor and its making method | |
| CN113224156B (en) | Gallium nitride device, switching power tube, driving circuit and manufacturing method thereof | |
| CN106098757B (en) | Field effect transistor | |
| CN102931230B (en) | Aluminum gallium nitride does the gallium nitrate based HEMT of double heterojunction and the manufacture method of resistive formation | |
| CN108630748B (en) | All-plane terahertz composite strain Si/SiGe heterojunction bipolar transistor and preparation method thereof | |
| CN108649067B (en) | Terahertz SOI composite strain Si/SiGe heterojunction bipolar transistor and preparation method thereof | |
| CN105206673A (en) | Agencement Cellulaire Pour Dispositifs A Semiconducteurs | |
| CN105206655A (en) | Agencement cellulaire pour dispositifs a semiconducteurs | |
| CN104091825A (en) | Super junction collector region SiGe heterojunction bipolar transistor | |
| CN102324436A (en) | Large-mismatch silicon-based substrate antimonide transistor with high electron mobility and manufacturing method thereof | |
| CN100397655C (en) | Structure of improving gallium nitride base high electronic mobility transistor property and producing method | |
| CN103943670A (en) | Super-junction collector region strained silicon heterojunction bipolar transistor | |
| CN103035674B (en) | Radio frequency horizontal dual pervasion field effect transistor and manufacture method thereof | |
| EP2879182B1 (en) | Transistor, amplifier circuit and integrated circuit | |
| CN102544086A (en) | GaN-based high-electron-mobility transistor and manufacturing method thereof | |
| CN109920840B (en) | L-shaped SiO2Composite RC-LIGBT device with isolation layer | |
| US8546850B2 (en) | Superjunction collectors for transistors and semiconductor devices | |
| CN106298898A (en) | Vertical conduction power device and preparation method thereof | |
| CN101707182B (en) | Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor | |
| CN102983161B (en) | Non-buried layer double deep N well high-voltage isolation N-type LDMOS and method for manufacturing N-type LDMOS devices | |
| CN100379019C (en) | Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and mfg. method thereof | |
| RU2563544C1 (en) | Semiconductor heterostructure | |
| CN102339868B (en) | Metal semiconductor field effect transistor with inverse isolating layer structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191211 Address after: Ganquan road Shushan District of Hefei City, Anhui Province, 230000 West hillock road to the South Wild Garden commercial office building room B-1512 Patentee after: ANHUI YINGLONG INDUSTRIAL DESIGN Co.,Ltd. Address before: 100124 Chaoyang District, Beijing Ping Park, No. 100 Patentee before: Beijing University of Technology |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: Yang Miao Zhen Xin Yang Cun, Hanjiang District, Yangzhou City, Jiangsu Province Patentee after: Yangzhou Xinshan Electronic Technology Co.,Ltd. Address before: Ganquan road Shushan District of Hefei City, Anhui Province, 230000 West hillock road to the South Wild Garden commercial office building room B-1512 Patentee before: ANHUI YINGLONG INDUSTRIAL DESIGN Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Super junction collector strain silicon heterojunction bipolar transistor Effective date of registration: 20231116 Granted publication date: 20161005 Pledgee: Yangzhou Branch of Bank of Jiangsu Co.,Ltd. Pledgor: Yangzhou Xinshan Electronic Technology Co.,Ltd. Registration number: Y2023980065573 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |