CN103943643B - Metal shading film that a kind of multilamellar is piled up and preparation method thereof - Google Patents
Metal shading film that a kind of multilamellar is piled up and preparation method thereof Download PDFInfo
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- CN103943643B CN103943643B CN201410170928.4A CN201410170928A CN103943643B CN 103943643 B CN103943643 B CN 103943643B CN 201410170928 A CN201410170928 A CN 201410170928A CN 103943643 B CN103943643 B CN 103943643B
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Abstract
The present invention relates to a kind of metal shading film of multilamellar accumulation and preparation method thereof.The metal shading film of the present invention includes that at least one metal aluminium film being alternately coated in device wafers and at least one tungsten thin film are superimposed to be formed；The gross thickness of the metal shading film is 2000～4000 Ethylmercurichlorendimides.The method of the present invention changes the structure of existing metal shading film, by thicker shading film is divided into relatively thin multi-layer film structure, on the premise of excellent shaded effect is ensured, inhibited because of the excessive and caused lamination problem of membrane stress again, improve the performance of optics.
Description
Technical field
The present invention relates to field of semiconductor manufacture, metal shading film and its preparation side that more particularly to a kind of multilamellar is piled up
Method.
Background technology
In an optical device, absorption of the Chang Yinwei incident illuminations on different receiving devices and produce signal interference, so as to shadow
The performance of Chinese percussion instrument part, is such as applied to the backside-illuminated sensor of photographic head, can often produce the problem of crosstalk.Prior art is generally adopted
Method incident illumination reflected with deposited metal shielding film solving this problem, but the thickness of shielding film select compared with
Difficult, if film thickness is relatively thin, shaded effect is bad；If film thickness is too thick, can be led with bottom thin film stress greatly again
Layering is caused, component failure is made.
Content of the invention
The technical problem to be solved is to provide metal shading film that a kind of multilamellar is piled up and preparation method thereof,
Solve the technical problem for being difficult to that delaminating film is avoided while shaded effect is ensured in prior art.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：The metal shading film that a kind of multilamellar is piled up, including
Alternating is coated at least one metal aluminium film and at least one metal W film in device wafers；The metal shading film
Gross thickness be 2000～4000 Ethylmercurichlorendimides.
On the basis of above-mentioned technical proposal, the present invention can also do following improvement.
Further, the lambda1-wavelength scope for being irradiated to the superiors' metal shading film is 350～770 nanometers.
Further, the thickness range of every layer of metal aluminium film is 500～2000 Ethylmercurichlorendimides；Every layer of metal W film
Thickness range be 500～2000 Ethylmercurichlorendimides.
Further, the refractive index of the metal aluminium film is 0.8～0.9；The refractive index of the metal W film is
0.7～0.8.
A kind of preparation technology of the metal shading film that multilamellar is piled up, comprises the following steps：
(1) on the surface of device wafers, layer of metal aluminium film, the metallic aluminium are deposited using physical gas-phase deposite method
The thickness of thin film is 500～2000 Ethylmercurichlorendimides；
(2) in the upper surface of the metal aluminium film, layer of metal is deposited using mocvd method
W film, the thickness of the metal W film is 500～2000 Ethylmercurichlorendimides；
(3) above-mentioned two step, alternating deposit metal aluminium film and metal W film are repeated, until the metal of the formation
The gross thickness of shading film reaches 2000～4000 Ethylmercurichlorendimides.
Further, the metal shading film is used for reflected illumination wave-length coverage thereon and is 350～770 nanometers entering
Penetrate light.
Further, the depositing temperature of the metal aluminium film is 200～400 DEG C, and radio-frequency power is 200～1000W.
Further, the metal W film is deposited using tungsten hexafluoride, the flow velocity of the tungsten hexafluoride is 30
～100sccm, depositing temperature are 300～400 DEG C.
The invention has the beneficial effects as follows：The method of the present invention changes the structure of existing metal shading film, by will be compared with
Thick shading film is divided into relatively thin multi-layer film structure, on the premise of excellent shaded effect is ensured, inhibits stress again
Excessive and caused lamination problem, improves the performance of optics.
Description of the drawings
Fig. 1 is the structural representation of the metal shading film that multilamellar of the present invention is piled up；
Fig. 2 is the preparation method flow chart of metal shading film of the present invention.
Specific embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
Non- for limiting the scope of the present invention.
Fig. 1 is the structural representation of the metal shading film that the present embodiment multilamellar is piled up, and this metal shading film is to wavelength
Scope is that 350～770 nanometers of incident illumination has preferable screening effect.This metal shading film includes that alternating is coated in device
Two metal aluminium films 5 and two metal W films 4 on wafer 3, the superiors of the metal shading film deposited one layer
Oxide layer 1.In the present embodiment, the thickness of every layer of metal aluminium film 5 is 500 Ethylmercurichlorendimides, and refractive index is 0.8, per layer of gold
The thickness of category W film 4 is 1000 Ethylmercurichlorendimides, and refractive index is 0.7, and the gross thickness of the metal shading film of formation is 3000 Ethylmercurichlorendimides.?
In other embodiment, the metal shading film can be handed over by least one of which metal aluminium film 5 and at least one of which metal W film 4
Form for deposition, the thickness of every layer of metal aluminium film 5 is any number of 500～2000 Ethylmercurichlorendimides, refractive index 0.8～
Between 0.9, the thickness of every layer of metal W film 4 is any number of 500～2000 Ethylmercurichlorendimides, refractive index be 0.7～0.8 it
Between, the gross thickness of the metal shading film of formation is 2000～4000 Ethylmercurichlorendimides.
Fig. 2 is the flow chart of the preparation method of metal shading film in embodiment 1, as shown in Fig. 2 comprising the following steps：
S101 adopts physical gas-phase deposite method, in the surface deposition layer of metal aluminium film of device wafers, the deposition
Metal aluminium film thickness be 500 Ethylmercurichlorendimides, refractive index is 0.8；The depositing temperature of the metal aluminium film is 300 DEG C, radio frequency
Power is 800W.
S102 is in the metal aluminium film, using chemical vapor deposition layer of metal W film, described heavy
The thickness of long-pending metal W film is 1000 Ethylmercurichlorendimides, and refractive index is 0.7；The tungsten is deposited using tungsten hexafluoride thin
Film, the flow velocity of the tungsten hexafluoride is 50sccm, and depositing temperature is 300 DEG C.
S103 repeats above-mentioned two step, again the metal aluminium film of one layer of 500 Ethylmercurichlorendimide of alternating deposit and 1000 Ethylmercurichlorendimides
Metal W film, until the gross thickness of the metal shading film of the formation reaches 3000 Ethylmercurichlorendimides.
In other embodiments, between 200～400 DEG C, radio-frequency power is 200 to the depositing temperature of the metal aluminium film
Any number between～1000W, the thickness of the metal aluminium film of formation is 500～2000 Ethylmercurichlorendimides；The metal W film
Between 300～400 DEG C, the flow velocity of the deposition gases tungsten hexafluoride is 30～100sccm to depositing temperature, the tungsten of formation
The thickness of thin film is 500～2000 Ethylmercurichlorendimides.
The method of the present invention changes the structure of existing metal shielding film, relatively thin by thicker shielding film to be divided into
Multi-layer film structure, on the premise of excellent shaded effect is ensured, inhibit the excessive and caused lamination problem of stress again,
Improve the performance of optics.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvements that is made etc. should be included within the scope of the present invention.
Claims (7)
1. the metal shading film that a kind of multilamellar is piled up, it is characterised in that：At least one be coated in including alternating in device wafers
Individual metal aluminium film and at least one metal W film；The gross thickness of the metal shading film is 2000～4000 Ethylmercurichlorendimides；Institute
The thickness range for stating at least one metal aluminium film is 500～2000 Ethylmercurichlorendimides；The thickness model of at least one metal W film
Enclose for 500～2000 Ethylmercurichlorendimides.
2. metal shading film according to claim 1, it is characterised in that：It is irradiated to entering for the superiors' metal shading film
Optical wavelength range is penetrated for 350～770 nanometers.
3. metal shading film according to claim 1 and 2, it is characterised in that：The refractive index of the metal aluminium film is equal
For 0.8～0.9；The refractive index of the metal W film is 0.7～0.8.
4. a kind of preparation technology of the metal shading film that multilamellar is piled up, comprises the following steps：
(1) on the surface of device wafers, layer of metal aluminium film, the metal aluminium film are deposited using physical gas-phase deposite method
Thickness be 500～2000 Ethylmercurichlorendimides；
(2) in the upper surface of the metal aluminium film, using chemical vapor deposition layer of metal W film, the gold
The thickness of category W film is 500～2000 Ethylmercurichlorendimides；
(3) above-mentioned two step, alternating deposit metal aluminium film and metal W film are repeated, until the metal shading film for being formed
Gross thickness reach 2000～4000 Ethylmercurichlorendimides.
5. the preparation technology of metal shading film according to claim 4, it is characterised in that：The metal shading film is used
In the incident illumination that reflected illumination wave-length coverage thereon is 350～770 nanometers.
6. the preparation technology of the metal shading film according to claim 4 or 5, it is characterised in that：The metal aluminium film
Depositing temperature be 200～400 DEG C, radio-frequency power be 200～1000W.
7. the preparation technology of the metal shading film according to claim 4 or 5, it is characterised in that：Using tungsten hexafluoride gas
Body deposits the metal W film, and the flow velocity of the tungsten hexafluoride is 30～100sccm, and depositing temperature is 300～400
℃.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410170928.4A CN103943643B (en) | 2014-04-25 | 2014-04-25 | Metal shading film that a kind of multilamellar is piled up and preparation method thereof |
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| CN201410170928.4A CN103943643B (en) | 2014-04-25 | 2014-04-25 | Metal shading film that a kind of multilamellar is piled up and preparation method thereof |
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| CN103943643A CN103943643A (en) | 2014-07-23 |
| CN103943643B true CN103943643B (en) | 2017-03-15 |
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| CN106430078A (en) * | 2016-08-18 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | Semiconductor structure and forming method for semiconductor structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441285A (en) * | 2007-11-22 | 2009-05-27 | 王嘉庆 | Reflection sheet |
| CN103715171A (en) * | 2013-12-24 | 2014-04-09 | 京东方科技集团股份有限公司 | Conductive metal interconnection wire and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US4966437A (en) * | 1988-04-19 | 1990-10-30 | Litton Systems, Inc. | Fault-tolerant anti-reflective coatings |
| KR100467944B1 (en) * | 2002-07-15 | 2005-01-24 | 엘지.필립스 엘시디 주식회사 | Transflective Liquid Crystal Display Device and Method for fabricating the same |
| US20070052035A1 (en) * | 2005-08-23 | 2007-03-08 | Omnivision Technologies, Inc. | Method and apparatus for reducing optical crosstalk in CMOS image sensors |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101441285A (en) * | 2007-11-22 | 2009-05-27 | 王嘉庆 | Reflection sheet |
| CN103715171A (en) * | 2013-12-24 | 2014-04-09 | 京东方科技集团股份有限公司 | Conductive metal interconnection wire and manufacturing method thereof |
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