CN103943495A - Height adjusting method of metal and N-type silicon Schottky contact-potential barrier - Google Patents
Height adjusting method of metal and N-type silicon Schottky contact-potential barrier Download PDFInfo
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- CN103943495A CN103943495A CN201410114231.5A CN201410114231A CN103943495A CN 103943495 A CN103943495 A CN 103943495A CN 201410114231 A CN201410114231 A CN 201410114231A CN 103943495 A CN103943495 A CN 103943495A
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- type silicon
- potential barrier
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 54
- 239000002184 metal Substances 0.000 title claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 238000005036 potential barrier Methods 0.000 title abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 23
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 23
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 18
- 239000000956 alloy Substances 0.000 claims abstract description 18
- 238000005275 alloying Methods 0.000 claims abstract description 12
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 210000002615 epidermis Anatomy 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 31
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
Abstract
The invention belongs to the technical field of manufacturing of chips of discrete semiconductor devices and discloses a height adjusting method of metal and an N-type silicon Schottky contact-potential barrier. No method for continuously adjusting and controlling the height of the Schottky potential barrier exists in the prior art. The height adjusting method of the metal and N-type silicon Schottky contact-potential barrier is characterized in that the formation process of the metal and N-type silicon Schottky contact-potential barrier comprises the following steps that an Ni film and a Pt film deposit on an N-epitaxial layer through a metal deposition window, and then Ni and Pt are alloyed; the mass ratio of Ni and Pt in the NiPt alloy is controlled by controlling the thicknesses of the Ni film and the Pt film; an Ni, Pt and Si metal silicide potential barrier layer is formed on the upper surface layer of the N-epitaxial layer while alloying is carried out, and NiPt alloy not participating in the metal silicide reaction is removed. The height of the NiPt alloy and the N-type silicon Schottky contact-potential barrier can be accurately determined between 0.75 eV and 0.84 eV by adjusting the mass ratio of the Ni and the Pt in the NiPt alloy, and therefore the required electrical property of a Schottky diode is obtained.
Description
Technical field
The present invention relates to the control method of a kind of metal and N-type silicon Schotty contact berrier height, the potential barrier forming is nickel Platinum Silicide, accurately regulate metal and N-type silicon Schotty contact berrier height by adjusting nickel platinum mass ratio, thereby obtain the device electrical properties of wishing, belong to discrete-semiconductor device chip fabrication techniques field.
Background technology
Schottky diode (SBD), compared with common P-N junction diode, has that forward conduction voltage drop is low, reverse recovery time is short and the advantage such as Antisurge current ability is strong, is used in high-speed and high-efficiency rectification circuit, microwave circuit and high speed integrated circuit.Schottky diode is taking metal as anodal, described metal is selected from Au, Ag, Al, Pt, Mo, Ni, Ti, taking N type semiconductor as negative pole, described semiconductor is Si, the metal-semiconductor device that utilizes the potential barrier with rectification characteristic forming on the two contact-making surface to make.
Schottky diode tube core structure and manufacturing process thereof are as follows, as shown in Figure 1:
Select N type semiconductor as substrate, namely N+ substrate, its reason is that electronics is larger than hole mobility, can obtain so good frequency characteristic.
In order to reduce the junction capacitance of Schottky diode, improve reverse breakdown voltage, do not make again series resistance excessive simultaneously, extension one deck high resistance film on N+ substrate, obtains N-type epitaxial loayer, namely N-epitaxial loayer.
Clean and thermal oxidation N-epitaxial loayer, form oxide layer 1.
Adopt photoetching process successively to offer P+ Implantation window and metal deposit window, and complete the making of P+ diffused guard ring and the deposit of front metal layer 2.
But photoetching meeting forms precipitous edge.In addition, the Si-SiO between N-epitaxial loayer and oxide layer 1
2there is the fixed charge of positively charged in interface, in addition in oxide layer 1 and oxide layer 1 surface exist as several and a lot of stain the movable cation producing by alkali metal ion as sodium ion, and, the fixed charge of described positively charged can go out negative electrical charge at the Si of N-epitaxial loayer surface induction, make N-epitaxial loayer occur being become by N-type the tendency of N+ type on Si surface, reduce barrier properties.These factors make to strengthen near the semiconductor depletion region narrowed width of periphery and electric field, cause there is around the corner excessive drain saturation current, namely turning effect, this turning effect, except producing soft opposite feature and low breakdown voltage, also causes inferior noise characteristic.This just need to make P+ diffused guard ring around the corner; Pass through evaporation or sputtering deposit front metal layer 2, metal layer on back 3 in vacuum system time, front metal layer 2 and the oxide layer 1 of periphery are suitably overlapped, form overlap, at this moment repaired in the following depletion region of Metal-oxide-semicondutor (MOS) electric capacity, precipitous edge be can improve, soft opposite feature and low breakdown voltage avoided producing.Certainly, overlap can not be large, otherwise additional electric capacity can reduce device high frequency characteristics.Finally obtain having the Schottky diode of ideal I-V characteristic.
In the time that metal contacts with semiconductor, namely on N-epitaxial loayer, after deposit front metal layer 2, just form barrier layer 4 at metal-semiconductor interface place, Schottky barrier herein can be controlled electric current conduction and determine capacitance characteristic.
Because schottky barrier height has material impact to the electrical properties of Schottky diode, requiring has specific barrier height between metal-semiconductor, but, there is no in the prior art the method for regulation and control schottky barrier height continuously.
Summary of the invention
Object of the present invention be just to provide a kind of can continuous setup and control the method for schottky barrier height, for this reason, we have invented the control method of a kind of metal and N-type silicon Schotty contact berrier height.
According to the present invention's method, at N+ substrate one side extension one deck N-epitaxial loayer, thermal oxidation N-epitaxial loayer, form oxide layer 1, employing photoetching process is offered P+ Implantation window and is completed the making of P+ diffused guard ring, adopt photoetching process to offer metal deposit window, forming after metal and N-type silicon Schotty contact berrier, deposit front metal layer 2 on barrier layer 4, and front metal layer 2 overlaps with the oxide layer 1 of periphery, in addition, at N+ substrate opposite side deposit metal layer on back 3, it is characterized in that, the forming process of described metal and N-type silicon Schotty contact berrier is as follows, by metal deposit window, deposit Ni film on N-epitaxial loayer, Pt film, make again Ni, Pt alloying wherein, and by Ni, Pt mass ratio in the THICKNESS CONTROL NiPt alloy of control Ni film, Pt film, in alloying, form Ni, Pt, Si metal silicide barrier layer 4 at N-epitaxial loayer upper epidermis, remove the NiPt alloy of not participating in metal silicide reaction.
Simple substance Ni and N-type silicon Schotty contact berrier height are 0.75eV, and simple substance Pt and N-type silicon Schotty contact berrier height are 0.84eV.Its technique effect of the present invention is, NiPt alloy and N-type silicon Schotty contact berrier height can be by adjusting Ni, Pt mass ratio in NiPt alloy, to accurately determining between 0.84eV, as shown in Figure 2, obtain thus required Schottky diode electrical properties at 0.75eV.
Brief description of the drawings
Fig. 1 is Schottky diode tube core structure schematic diagram.Fig. 2 is the graph of relation of Ni, Pt mass ratio in schottky barrier height and NiPt alloy, and this figure doubles as Figure of abstract.
Embodiment
Epitaxial wafer is made.Get N-type (111) silicon chip as N+ substrate, at silicon chip one side extension one deck N-epitaxial loayer, obtain epitaxial wafer.
Clean epitaxial wafer.First clean 10 minutes at 60 DEG C of temperature with SC1 solution, described its composition of SC1 solution and proportioning are NH
4oH:H
2o
2: H
2o=1:1:5(volume ratio), remove particle contaminant and part metals ionic impurity, clean with deionized water normal temperature afterwards.Again epitaxial wafer is immersed in to HF:H
2o=1:50(volume ratio) solution in 3 minutes, remove epitaxial wafer oxide on surface, be immersed in afterwards in deionized water 15 minutes.
Oxide layer growth.Epitaxial wafer after cleaning is put into diffusion furnace at once, at 1000 DEG C of temperature, in oxygen atmosphere, the oxide layer 1 of growing on N-epitaxial loayer.
Open P+ Implantation window.In oxide layer 1, coat
photoresist, sets litho pattern by reticle, and photolithographic exposure forms mask, and the not concealed oxide layer 1 of hydrofluoric acid solution erosion removal, obtains P+ Implantation window.
P+ diffused guard ring is made.Use implanter that boron ion is injected in N-epitaxial loayer by P+ Implantation window; Then in diffusion furnace, in nitrogen and oxygen atmosphere, at 1050 DEG C of temperature, anneal, activate the boron ion being injected into, allow them enter alternative site in the boron atom of interstitial void position by annealing some, form Schottky P+ diffused guard ring.
Karat gold belongs to deposit window.Coat at epitaxial wafer upper surface
photoresist, sets litho pattern by reticle, and photolithographic exposure forms mask, and the not concealed oxide layer 1 of hydrofluoric acid solution erosion removal, obtains metal deposit window.
Form metal and N-type silicon Schotty contact berrier.Chemical cleaning has had the epitaxial wafer of metal deposit window, removes particle contaminant, organic impurities contamination and metal ion and stains; Be placed on afterwards on sputtering unit, in high vacuum sputtering chamber, by metal deposit window deposit Ni film, Pt film on N-epitaxial loayer, the deposition sequence of Ni film, Pt film has two kinds, and the one, first deposit Ni film deposit Pt film again, the 2nd, first deposit Pt film deposit Ni film again, Ni film and Pt film gross thickness exist
in scope, determine, as
in high temperature alloy stove, make again Ni, Pt alloying in Ni film, the Pt film of institute's deposit, the protection of alloying process inflated with nitrogen, avoid Ni film, Pt film Yin Gaowen and oxidized, alloying time is determined within the scope of 45min～55min, as 50min, Ni and Pt merge generation NiPt alloy, Ni, Pt mass ratio Ni:Pt=1:9～9:1 in NiPt alloy, in alloying, Si in Ni, Pt and N-epitaxial loayer upper epidermis generates metal silicide, thereby forms Ni, Pt, Si metal silicide barrier layer 4 at N-epitaxial loayer upper epidermis; Remove the NiPt alloy of not participating in metal silicide reaction with chloroazotic acid.
The deposit of front metal layer 2, metal layer on back 3.Deposit front metal layer 2 on barrier layer 4, and front metal layer 2 overlaps with the oxide layer 1 of periphery, in addition, at N+ substrate opposite side deposit metal layer on back 3, obtains Schottky diode tube core.Its barrier height φ
bn0.75eV between 0.84eV determine.
When requiring as required Schottky barrier diode height φ
bnduring for 0.807eV, according to the φ of schottky barrier height shown in Fig. 2
bnwith the graph of relation of Ni, Pt content ratio in NiPt alloy, Ni, Pt mass ratio are 5:5, determine thus the thickness of Ni film, Pt film; Because the density of Ni is 8.9g/cm
3, the density of Pt is 21.4g/cm
3, the density of Pt is 2.4 times of density of Ni, therefore, in the time that Ni film thickness is 2.4 times of Pt film thickness, Ni, Pt quality Bizet equal 5:5, when Ni film and Pt film gross thickness are defined as
time, the thickness that can calculate Ni film is
the thickness of Pt film is
Claims (4)
1. the control method of a metal and N-type silicon Schotty contact berrier height, at N+ substrate one side extension one deck N-epitaxial loayer, thermal oxidation N-epitaxial loayer, form oxide layer (1), employing photoetching process is offered P+ Implantation window and is completed the making of P+ diffused guard ring, adopt photoetching process to offer metal deposit window, forming after metal and N-type silicon Schotty contact berrier, at the upper deposit front metal layer (2) of barrier layer (4), and front metal layer (2) overlaps with the oxide layer (1) of periphery, in addition, at N+ substrate opposite side deposit metal layer on back (3), it is characterized in that, the forming process of described metal and N-type silicon Schotty contact berrier is as follows, by metal deposit window, deposit Ni film on N-epitaxial loayer, Pt film, make again Ni, Pt alloying wherein, and by Ni, Pt mass ratio in the THICKNESS CONTROL NiPt alloy of control Ni film, Pt film, in alloying, form Ni, Pt, Si metal silicide barrier layer (4) at N-epitaxial loayer upper epidermis, remove the NiPt alloy of not participating in metal silicide reaction.
2. the control method of metal according to claim 1 and N-type silicon Schotty contact berrier height, is characterized in that, the deposition sequence of Ni film, Pt film has two kinds, the one, and first deposit Ni film deposit Pt film again, the 2nd, first deposit Pt film deposit Ni film again.
3. the control method of metal according to claim 1 and N-type silicon Schotty contact berrier height, is characterized in that, Ni film and Pt film gross thickness exist
in scope, determine.
4. the control method of metal according to claim 1 and N-type silicon Schotty contact berrier height, it is characterized in that, in high temperature alloy stove, make Ni, Pt alloying in Ni film, the Pt film of institute's deposit, the protection of alloying process inflated with nitrogen, alloying time is determined within the scope of 45min～55min; Ni, Pt mass ratio Ni:Pt=1:9～9:1 in NiPt alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410114231.5A CN103943495A (en) | 2014-03-24 | 2014-03-24 | Height adjusting method of metal and N-type silicon Schottky contact-potential barrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410114231.5A CN103943495A (en) | 2014-03-24 | 2014-03-24 | Height adjusting method of metal and N-type silicon Schottky contact-potential barrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103943495A true CN103943495A (en) | 2014-07-23 |
Family
ID=51191106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410114231.5A Pending CN103943495A (en) | 2014-03-24 | 2014-03-24 | Height adjusting method of metal and N-type silicon Schottky contact-potential barrier |
Country Status (1)
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| CN (1) | CN103943495A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107785249A (en) * | 2016-08-31 | 2018-03-09 | 台湾积体电路制造股份有限公司 | The method for manufacturing semiconductor device |
| CN109585570A (en) * | 2018-12-19 | 2019-04-05 | 吉林麦吉柯半导体有限公司 | The manufacturing method of Schottky diode, NIPT95 alloy and Schottky diode |
| WO2019119959A1 (en) * | 2017-12-21 | 2019-06-27 | 秦皇岛京河科学技术研究院有限公司 | Preparation method for sic schottky diode and structure thereof |
| CN113054007A (en) * | 2021-03-17 | 2021-06-29 | 西安微电子技术研究所 | Schottky diode made of NiPt15 alloy and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816879A (en) * | 1982-12-08 | 1989-03-28 | North American Philips Corporation, Signetics Division | Schottky-type rectifier having controllable barrier height |
| US6531396B1 (en) * | 1999-11-17 | 2003-03-11 | Institute Of Materials Research And Engineering | Method of fabricating a nickel/platinum monsilicide film |
| CN102456748A (en) * | 2010-10-22 | 2012-05-16 | 上海芯石微电子有限公司 | Schottky diode and manufacturing method thereof |
| CN102496571A (en) * | 2011-12-19 | 2012-06-13 | 杭州士兰集成电路有限公司 | Method and structure for manufacturing low barrier Schottky diode |
-
2014
- 2014-03-24 CN CN201410114231.5A patent/CN103943495A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4816879A (en) * | 1982-12-08 | 1989-03-28 | North American Philips Corporation, Signetics Division | Schottky-type rectifier having controllable barrier height |
| US6531396B1 (en) * | 1999-11-17 | 2003-03-11 | Institute Of Materials Research And Engineering | Method of fabricating a nickel/platinum monsilicide film |
| CN102456748A (en) * | 2010-10-22 | 2012-05-16 | 上海芯石微电子有限公司 | Schottky diode and manufacturing method thereof |
| CN102496571A (en) * | 2011-12-19 | 2012-06-13 | 杭州士兰集成电路有限公司 | Method and structure for manufacturing low barrier Schottky diode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107785249A (en) * | 2016-08-31 | 2018-03-09 | 台湾积体电路制造股份有限公司 | The method for manufacturing semiconductor device |
| WO2019119959A1 (en) * | 2017-12-21 | 2019-06-27 | 秦皇岛京河科学技术研究院有限公司 | Preparation method for sic schottky diode and structure thereof |
| CN109585570A (en) * | 2018-12-19 | 2019-04-05 | 吉林麦吉柯半导体有限公司 | The manufacturing method of Schottky diode, NIPT95 alloy and Schottky diode |
| CN113054007A (en) * | 2021-03-17 | 2021-06-29 | 西安微电子技术研究所 | Schottky diode made of NiPt15 alloy and preparation method thereof |
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