CN103943451A - Plasma processing device and method of operating the same - Google Patents

Plasma processing device and method of operating the same Download PDF

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Publication number
CN103943451A
CN103943451A CN201410022526.XA CN201410022526A CN103943451A CN 103943451 A CN103943451 A CN 103943451A CN 201410022526 A CN201410022526 A CN 201410022526A CN 103943451 A CN103943451 A CN 103943451A
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CN
China
Prior art keywords
high frequency
frequency electric
electric source
reflected wave
blocking
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CN201410022526.XA
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Chinese (zh)
Inventor
古屋敦城
东条利洋
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN201810889087.0A priority Critical patent/CN109087844B/en
Publication of CN103943451A publication Critical patent/CN103943451A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

The present invention provides a plasma processing device, wherein the plasma-related high-frequency power is supplied to an upper electrode and/or a lower electrode respectively from at least two high-frequency power supplies and the fluctuation of reflected waves is reliably detected. Meanwhile, the occurrence of abnormal discharge is avoided. A threshold setting part (123) is configured to switch a level of an obstructing threshold into a relatively low level of the obstructing threshold in a first high-frequency power supply part (65) and a second high-frequency power supply part (75) at a time point (T3) when the high-frequency power supply of the second high-frequency power supply part (75) is stabilized. The relatively low level of the obstructing threshold is continued at the same time point in the first high-frequency power supply part (65) and in the second high-frequency power supply part (75). At a time point (T4), the threshold setting part sets the obstructing threshold for a second time when the first power supply of the first high-frequency power supply part (65) is increased. Meanwhile, the level of the obstructing threshold is respectively raised to a relatively high level. The relatively high level is continued at the same time point in the first high-frequency power supply part (65) and in the second high-frequency power supply part (75).

Description

The method of operation of plasma processing apparatus and plasma processing apparatus
Technical field
The present invention design utilizes High frequency power to make to process gaseous plasma, utilizes this plasma handled object to be implemented to plasma processing apparatus and the method for operation thereof of the processing of etching etc.
Background technology
At the FPD(flat-panel monitor taking semiconductor device, liquid crystal indicator as representative) etc. manufacturing process in, can utilize to the handled object of semiconductor wafer, glass substrate and so on implement etch processes plasma-etching apparatus, implement the plasma processing apparatus etc. of the plasma CVD equipment etc. of film forming processing.
For example known have the capacitance coupling plasma being formed between this electrode in the electrode supply high frequency electric power to parallel plate-type, utilization to carry out in the etched Etaching device of handled object, and side's side of the electrode relatively arranging up and down forms with plasma uses the high frequency electric source of (using hereinafter referred to as source electrode) to be connected.In the time of this Etaching device starting, to electrode supply high frequency electric power, between the electrode of parallel plate-type, be formed with plasma from high frequency electric source thus.Now, supply with while having large electric power in the short time, for example, can not obtain mating of the match circuit that is arranged between high frequency electric source and electrode, produce the reflected wave from electrode side tremendously high frequency power supply.This reflected wave becomes the obstacle while forming stable plasma, also becomes the omen of paradoxical discharge.So, propose electric power from high frequency electric source to supply with and be divided into multiple stages, supply with gradually electric power, thus, the soft start control (for example, with reference to patent documentation 1) that the reflected wave electric power occurring can be by starting time suppresses littlely.
In addition, in plasma processing apparatus, in addition, also because various reasons produce abnormal generating.In the time producing paradoxical discharge, the harmful effect of the damage of production part, the destruction of device etc.So, in the plasma processing apparatus of the single-frequency mode of the either party's supply high frequency electric power to upper electrode or lower electrode, by reflected wave electric power and threshold value are relatively detected to paradoxical discharge, in the time being detected paradoxical discharge, the technology (for example, with reference to patent documentation 2) of in official hour width, high frequency electric source blocking being controlled.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2010-135422 communique
Patent documentation 2: International Publication WO2009/118920 communique
Summary of the invention
The problem solving is wanted in invention
The generation of the paradoxical discharge in plasma processing apparatus can detect from the variation of the reflected wave of electrode side tremendously high frequency power supply by supervision.But, for example, in the method that the rate of change of reflected wave is monitored as index, in the case of the variation sharply of reflected wave, can detect, but can not detect in the case of the variation of reflected wave occurs lentamente, sometimes cause paradoxical discharge.
In addition, the prerequisite of the motion content of above-mentioned patent documentation 2 is plasma processing apparatus of single-frequency mode, does not therefore consider the application of the plasma processing apparatus of the double frequency mode to the High frequency power relevant to plasma supplied with to electrode respectively from two high frequency electric sources.
Therefore, the object of the invention is to will supply with to upper electrode and/or lower electrode respectively the plasma processing apparatus of mode of the High frequency power relevant to plasma from least two high frequency electric sources, the variation of detection of reflected ripple reliably, prevents the generation of paradoxical discharge in advance.
For the technical scheme of technical solution problem
Plasma processing apparatus of the present invention comprises: the container handling of storage handled object; Export multiple high frequency electric sources of the high frequency relevant to the plasma generating in described container handling; To the multiple reflected wave test sections that detect respectively to the reflected wave of described multiple high frequency electric sources; The electric power control part that the output of described multiple high frequency electric sources is controlled; Blocking control part, the detected value of its reflected wave in any of described multiple high frequency electric sources exceedes the predefined blocking to each high frequency electric source to be used threshold value, and blocking is the supply of the high frequency of described multiple high frequency electric sources all; With Threshold portion, in any of described multiple high frequency electric sources, starting the moment of supply high frequency or making the moment of exporting change that described blocking threshold value is all set as to relatively high level, whole for described multiple high frequency electric sources switch to relatively low level by described blocking with threshold value whole after the supply of high frequency is stable.
Plasma processing apparatus of the present invention, can: as described multiple high frequency electric sources, at least there is the second high frequency electric source of the first high frequency electric source high frequency different from described the first high frequency electric source frequency with output, as described multiple reflected wave test sections, there is the first reflected wave test section and the second reflected wave test section of detection to the reflected wave of described the second high frequency electric source that detect to the reflected wave of described the first high frequency electric source, described blocking control part, at the detected value of the reflected wave of described the first high frequency electric source or in any one party of the detected value of the reflected wave of described the second high frequency electric source, exceed the predefined blocking of detected value of the detected value of the reflected wave to described the first high frequency electric source and the reflected wave of described the second high frequency electric source respectively with in the situation of threshold value, interdict the supply of described the first high frequency electric source and described the second high frequency electric source both sides' high frequency, described Threshold portion, in any one party of described the first high frequency electric source or described the second high frequency electric source, start high frequency supply moment or make the moment of exporting change that described blocking threshold value is all set as to relatively high level, after the supply from described the first high frequency electric source and the high frequency of described the second high frequency electric source is stable, described blocking is all set as to relative low level with the level of threshold value.
Plasma processing apparatus of the present invention, can be starting in the process of described plasma, described electric power control part make respectively from the output of the high frequency of described the first high frequency electric source and from the output stage of the high frequency of described the second high frequency electric source the soft start control that increases.
In plasma processing apparatus of the present invention, can: described electric power control part is controlled, make the detected value of the detected value of the reflected wave based on described the first reflected wave test section and the reflected wave based on described the second reflected wave test section become respectively predefined startup by threshold value below after, making increases from the output of the high frequency of described the first high frequency electric source.
In plasma processing apparatus of the present invention, can: described Threshold portion, the detected value of the detected value of the reflected wave based on described the first reflected wave test section and the reflected wave based on described the second reflected wave test section become respectively predefined startup by threshold value below after, during till making to increase from the output of the high frequency of described the first high frequency electric source, be described relatively low level by described blocking with Threshold.
In plasma processing apparatus of the present invention, can: described electric power control part is controlled, make the detected value of the detected value of the reflected wave based on described the first reflected wave test section and the reflected wave based on described the second reflected wave test section become respectively predefined startup by threshold value below after, making increases from the output of the high frequency of described the second high frequency electric source.
In plasma processing apparatus of the present invention, can: described Threshold portion, the detected value of the detected value of the reflected wave based on described the first reflected wave test section and the reflected wave based on described the second reflected wave test section become predefined startup by threshold value below after, during till making to increase from the output of the high frequency of described the second high frequency electric source, be described relatively low level by described blocking with Threshold.
Plasma processing apparatus of the present invention can described relatively high level blocking be the more than 25% of power-handling capability of exporting respectively from described the first high frequency electric source or described the second high frequency electric source by threshold value.
Plasma processing apparatus of the present invention can described relatively low level blocking be below 5% of power-handling capability of exporting respectively from described the first high frequency electric source or described the second high frequency electric source by threshold value.
Plasma processing apparatus of the present invention can be to identical during the setting of the described relatively low level of the described blocking threshold value that described the first high frequency electric source or described the second high frequency electric source are set respectively.
Identical during the setting of the described relatively high level of the described blocking threshold value that plasma processing apparatus of the present invention can be set respectively described the first high frequency electric source or described the second high frequency electric source.
The method of operation of plasma processing apparatus of the present invention, it for generating the method for operation of the plasma processing apparatus that plasma processes handled object in described container handling, and described plasma processing apparatus comprises: the container handling of storage handled object; Export multiple high frequency electric sources of the high frequency relevant to the plasma generating in described container handling; Multiple reflected wave test sections that described in subtend, the reflected wave of multiple high frequency electric sources detects respectively; The electric power control part that the output of described multiple high frequency electric sources is controlled; With blocking control part, the detected value of its reflected wave in any of described multiple high frequency electric sources exceedes the predefined blocking to each high frequency electric source to be used threshold value, the supply of the whole blocking high frequencies to described multiple high frequency electric sources.
The method of operation of plasma processing apparatus of the present invention can comprise: in any one of described multiple high frequency electric sources, starting the moment of supply high frequency or making moment of exporting change, the whole steps that are set as relatively high level by described blocking by threshold value; Whole with for described multiple high frequency electric sources, after the supply of high frequency is stable by described blocking the whole steps that switch to relatively low level by threshold value.
The method of operation of plasma processing apparatus of the present invention can comprise: in the case of the exporting change that makes described high frequency, and the operation that the performance number of the reflected wave of multiple high frequency electric sources is measured described in subtend; Whether the detected value of the reflected wave of whole high frequency electric source of the high frequency electric source that judgement comprises the exporting change that makes high frequency the operation below predefined threshold value; After becoming below predefined threshold value with the detected value of the reflected wave at described whole high frequency electric source, make the operation of the exporting change of a described high frequency electric source.
Invention effect
According to the present invention, in multiple high frequency electric sources are individual arbitrarily, the beginning supply of high frequency or the moment of variation are all set as relatively high level by blocking by threshold value, after the supply of the whole high frequency to multiple high frequency electric sources is stable, blocking is switched to relatively low level with threshold value whole, the variation of detection of reflected ripple reliably thus, can prevent the generation of paradoxical discharge in advance.
Brief description of the drawings
Fig. 1 is the sectional view that schematically represents the formation of the plasma-etching apparatus of an embodiment of the invention.
Fig. 2 is the calcspar that represents the hardware formation of the control part of the plasma-etching apparatus of an embodiment of the invention.
Fig. 3 is the calcspar that the hardware of the module controls in presentation graphs 2 forms.
Fig. 4 is the calcspar that the relation of the function composing of formation to two high frequency electric source portions and module controller (module controller) describes.
Fig. 5 is the time chart (timing chart) that represents an example of the method for operation of the plasma processing apparatus of embodiments of the present invention.
Fig. 6 is the flow chart that represents an example of the step of the method for operation of the plasma processing apparatus of embodiments of the present invention.
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are elaborated.
［ the first execution mode ］
Fig. 1 represents the sectional view that forms as the summary of the plasma-etching apparatus of the first execution mode of processing unit of the present invention.As shown in Figure 1, glass substrate (following, to note by abridging as " the substrate ") S that plasma-etching apparatus 100 is configured to using as for example FPD of handled object carries out the parallel flat plasma-etching apparatus of etched capacitive coupling type.In addition,, as FPD, can illustrate liquid crystal display (LCD), electroluminescence (Electro Luminescence; EL) display, plasma display (PDP) etc.
This plasma-etching apparatus 100 has the container handling that is configured as angle barrel shape 1 being formed by the aluminium of anodized (pellumina processing) by inner side.The main body (container body) of container handling 1 only illustrates 2 by diapire 1a and 4 sidewall 1b() form.In addition, there is lid 1c in the upper bond of the main body of container handling 1.Although diagram is omitted, the gate valve that is provided with substrate transferring opening and this substrate transferring opening is sealed at sidewall 1b.
Lid 1c is configured to by not shown switching mechanism and can opens and closes with respect to sidewall 1b.Bonding part at the state lower cover 1c that lid 1c is closed and each sidewall 1b is sealed by O type circle 3, keeps the air-tightness in container handling 1.
Bottom in container handling 1 disposes the insulating element 10 of shaped as frame shape.On insulating element 10, be provided with as the pedestal 11 of mounting table that can load substrate S.Also possesses base material 12 as the pedestal 11 of lower electrode.Base material 12 is for example formed by conductive materials such as aluminium or stainless steels (SUS).Base material 12 is configured on insulating element 10, is equipped with the seal members 13 such as O type circle to maintain air-tightness in the bonding part of two parts.Between the diapire 1a of insulating element 10 and container handling 1, also utilize the seal members 14 such as O type circle to maintain air-tightness.The sidepiece periphery of base material 12 is surrounded by insulating element 15.Thus, guarantee the insulating properties of the side of pedestal 11, the paradoxical discharge while preventing plasma treatment.
Above pedestal 11, parallel with this pedestal 11 and be relatively provided with the shower nozzle 31 working as upper electrode.Shower nozzle 31 is supported by the lid 1c on the top of container handling 1.Shower nozzle 31 is hollow form, is provided with gas diffusion space 33 therein.In addition, be formed with multiple gas squit holes 35 of ejection processing gas at the lower surface (face relative with pedestal 11) of shower nozzle 31.These shower nozzle 31 ground connection form pair of parallel plate electrode together with pedestal 11.
Near the center upper portion of shower nozzle 31, be provided with gas introduction port 37.This gas introduction port 37 is connected with processing gas supply pipe 39.This processing gas supply pipe 39 is connected with the gas supply source 45 of supplying with for etched processing gas with mass flow controller (MFC) 43 via two valves 41,41.As processing gas, for example, except halogen gas, O2 gas, can use the rare gas such as Ar gas etc.
Diapire 1a in container handling 1 is formed with at multiple positions the opening 51 for exhaust that (for example 8 positions) connect.Each exhaust is connected with blast pipe 53 with opening 51.Blast pipe 53 has flange part 53a in its end, is fixed with the state that is provided with O type circle (diagram is omitted) between this flange part 53a and diapire 1a.Be provided with APC valve 55 at blast pipe 53, in addition, blast pipe 53 is connected with exhaust apparatus 57.Exhaust apparatus 57 for example possesses turbomolecular pump equal vacuum pump, thus, is configured to and can will in container handling 1, be evacuated to the reduced atmosphere of regulation.
Shower nozzle 31 is connected with supply lines 61.This supply lines 61 forms and is connected with (source with) first high frequency electric source 65 via matching box (M.B.) 63 and plasma.Thus, supply with the High frequency power of for example 13.56MHz to the shower nozzle 31 as upper electrode from the first high frequency electric source 65.
The base material 12 of pedestal 11 is connected with supply lines 71.The second high frequency electric source 75 that this supply lines 71 is used with bias voltage via matching box (M.B.) 73 is connected.Thus, supply with the High frequency power of for example 3.2MHz to the pedestal 11 as lower electrode from the second high frequency electric source 75.In addition, supply lines 71 is directed in container handling 1 by the opening 77 of the power supply as pass through openings portion that is formed on diapire 1a.
In matching box (M.B.) 63, be provided with one distolaterally via match circuit that for example coaxial cable is connected with the first high frequency electric source portion 65 (diagram is omitted), another of this match circuit is distolateral to be connected with the shower nozzle 31 as upper electrode.Match circuit carries out the impedance adjustment (coupling) between load (plasma) and the first high frequency electric source portion 65 according to the impedance of plasma, plays the effect that makes the reflected wave decay producing in the circuit of plasma-etching apparatus 100.
In matching box (M.B.) 73, be provided with one distolaterally via match circuit that for example coaxial cable is connected with the second high frequency electric source portion 75 (diagram is omitted), another of this match circuit is distolateral to be connected with the pedestal 11 as lower electrode.Match circuit carries out the impedance adjustment (coupling) between load (plasma) and the second high frequency electric source portion 75 according to the impedance of plasma, plays the effect that makes the reflected wave decay producing in the circuit of plasma-etching apparatus 100.
The each formation portion of plasma-etching apparatus 100, becomes with control part 80 and is connected and controlled structure.With reference to Fig. 2, the control part 80 of the base plate processing system comprising in a part for the plasma-etching apparatus 100 to present embodiment describes.Fig. 2 is the block diagram that represents the hardware configuration of control part 80.As shown in Figure 2, control part 80 possesses: Setup Controller (Equipment Controller; Below, be sometimes designated as " EC ") 81; Multiple (only illustrate 2 in Fig. 2, but be not limited to this) module controller (Module Controller; Below, be sometimes designated as " MC ") 83; With the switching hub (HUB) 85 that EC81 is connected with MC83.
EC81 is all together multiple MC83, the master control part (master control part) that the overall action of base plate processing system is controlled.Multiple MC83 sub-control portion (slave controller: from control part) under the control of EC81, the action of the each module with headed by plasma-etching apparatus 100 being controlled of respectively doing for oneself.Switching hub 85, according to the control signal from EC81, switches the MC83 being connected with EC81.
EC81, according to for realizing the control program of the various processing to substrate S of being carried out by base plate processing system and recording the scheme for the treatment of conditions data etc., transmits control signal to each MC83, thus, controls the overall action of base plate processing system.
Control part 80 also possesses sub-network 87, DIST(Distribution: distribute) dish 88 and input and output (being designated as below I/O) module 89.Each MC83, by sub-network 87 and DIST dish 88, is connected with I/O module 89.
I/O module 89 has multiple I/O portion 90.I/O portion 90 is connected with each terminal equipment of plasma-etching apparatus 100 and each module.Although it is not shown,, I/O portion 90 is provided with the I/O dish for the input and output of control figure signal, analog signal and serial signal.The control signal of each terminal equipment is output from I/O portion 90 respectively.In addition, be imported into respectively I/O portion 90 from the output signal of each terminal equipment.In plasma-etching apparatus 100, as the terminal equipment being connected with I/O portion 90, for example, can enumerate mass flow controller (MFC) 43, APC valve 55, exhaust apparatus 57, two matching boxes 63,73, two high frequency electric source portions (the first high frequency electric source portion 65, the second high frequency electric source portion 75) etc.
EC81 is by LAN(Local Area Network: local area network (LAN)) 91 with MES(Manufacturing Execution System as the manufacturing process of the factory's entirety that is provided with base plate processing system is managed: manufacturing execution system) computer 93 be connected.Computer 93 and the control part 80 of base plate processing system cooperate the relevant real time information with operation of factory are fed back to maincenter operation system, and consider that the load etc. of factory's entirety carries out the judgement relevant to operation.Computer 93 can be connected with for example other computer 95 messaging devices such as grade.
Then, with reference to Fig. 3, the hardware configuration to MC83 example describes.MC83 possesses: master control part 101; The input unit such as keyboard, mouse 102; The output devices such as printer 103; Display unit 104; Storage device 105; External interface 106; With the bus 107 being connected to each other.Master control part 101 has CPU(central processing unit) 111, RAM(random access memory) 112 and ROM(read-only memory) 113.As long as storage device 105 can be stored information, its form does not limit, for example, be hard disk unit or optical disc apparatus.In addition, recording medium 115 recorded informations that storage device 105 can read at computer and from recording medium 115 reading informations.As long as recording medium 115 can be stored information, its form does not limit, for example, be hard disk, CD, flash memory etc.Recording medium 115 can be the recording medium that records the scheme of the plasma-etching method of present embodiment.
In MC83, CPU111 uses RAM112 as working region, carries out the program of storage in ROM113 or storage device 105, thus, can in the plasma-etching apparatus of present embodiment 100, carry out the plasma etch process to substrate S.In addition, the hardware configuration of the EC81 shown in Fig. 2, computer 93,95 also becomes the structure roughly the same with the structure shown in Fig. 3.
Then, with reference to Fig. 4, the relation of the first high frequency electric source portion 65 and second formation of high frequency electric source portion 75 and the function composing of MC83 is described.Fig. 4 is the formation of the first high frequency electric source portion 65 and the second high frequency electric source portion 75 and a part for the function composing of MC83 is extracted to the represented functional block diagram of key component.In addition, in the following description, become the part of the structure shown in Fig. 3 as the hardware configuration of MC83, also with reference to the Reference numeral in Fig. 3.
As shown in Figure 4, MC81 possesses electric power control part 121, blocking control part 122, Threshold portion 123.The software (program) that they use RAM112 to carry out storage in ROM113 or storage device 105 as working region by CPU111 is realized.
The first high frequency electric source portion 65 possesses oscillating portion 131, calculation enlarging section 132, electric power enlarging section 133 and transducer portion 134.At this, oscillating portion 131, calculation enlarging section 132 and electric power enlarging section 133 form high frequency electric source 135.
The second high frequency electric source portion 75 possesses oscillating portion 141, calculation enlarging section 142, electric power enlarging section 143 and transducer portion 144.At this, oscillating portion 141, calculation enlarging section 142 and electric power enlarging section 143 form high frequency electric source 145.
Oscillating portion 131,141 generates high-frequency signal.The high frequency that the frequency of this high-frequency signal can be supplied with according to plasma load determines.
Calculation enlarging section 132,142 is according to the amplitude of the command signal control high-frequency signal of electric power control part 121.
The output signal that electric power enlarging section 133,143 receives from calculation enlarging section 132,142, amplifies electric power.
Transducer portion 134,144 respectively to from the first high frequency electric source portion 65 or the second high frequency electric source portion 75 is sent to the row ripple electric power PF of load (plasma) and from load (plasma) to the first high frequency electric source portion 65 or the reflected wave electric power REF of the second high frequency electric source portion 75 detect.Row ripple electric power PF and reflected wave electric power REF detect in transducer portion 134,144, and the detection signal of the detection signal of row ripple electric power PF and reflected wave electric power REF is sent to electric power control part 121, blocking control part 122 and Threshold portion 123.
Scheme, the parameter of electric power control part 121 based on being stored in advance storage device 105, oscillating portion 131,141 to the first high frequency electric source portion 65 or the second high frequency electric source portion 75 and calculation enlarging section 132,142 transmit control signal, control thus electric power and supply with, make to carry out desired plasma etch process in plasma-etching apparatus 100.For example, electric power control part 121 receives row ripple electric power PF as feedback signal from transducer portion 134,144, deviation based on this feedback signal and electric power command value is carried out FEEDBACK CONTROL, controls and makes the output power of the first high frequency electric source portion 65 or the second high frequency electric source portion 75 become respectively electric power command value.In the FEEDBACK CONTROL of electric power control part 121, the differential signal of electric power command value and row ripple electric power PF is generated as to the command signal of controlling output power, input to calculation enlarging section 132,142.On the other hand, also become the high-frequency signal of benchmark to 132,142 inputs of calculation enlarging section from oscillating portion 131,141.Thus, calculation enlarging section 132,142 is controlled as the electric power that load (plasma) is supplied with becomes electric power command value.The output signal of calculation enlarging section 132,142 after electric power, is being sent to shower nozzle 31, pedestal 11 by matching box 63,73 as specifying respectively by electric power enlarging section 133,143.
In addition, electric power control part 121 receives from the detection signal of the reflected wave electric power REF of transducer portion 134,144 and carries out as required droop control, suppresses to follow the increase of reflected wave electric power REF and the overcurrent, the overvoltage that produce, protection power source.In addition, the control of carrying out based on electric power control part 121, except can be by electric power command value control output power be carried out, can also be by voltage instruction value control output voltage be carried out.
Blocking control part 122 receives from the detection signal of the reflected wave electric power REF of transducer portion 134,144 High frequency power of the first high frequency electric source portion 65 or the second high frequency electric source portion 75 is supplied with and interdicted processing.Particularly, detection signal and the blocking threshold value of the reflected wave electric power REF that blocking control part 122 is relatively detected by transducer portion 134 or transducer portion 144, in the time that any size of a reflected wave electric power REF exceedes blocking and use threshold value, the blocking command signal that transmission stops both actions of oscillating portion 131 and oscillating portion 141.Stop by the action that makes oscillating portion 131 and 141, from the first high frequency electric source portion 65 and the second high frequency electric source portion 75, the electric power of load (plasma) is supplied with and temporarily stopped.In addition, control as the blocking of being undertaken by blocking control part 122, can make to supply with electric power amount and reduce, substitute electric power supply is stopped.For example, can suppress the action that output substitutes oscillating portion 131,141 by electric power control part 121 stops.
Threshold portion 123 is set in the threshold value that blocking control part 122 interdicts the reflected wave electric power REF of reference in situation about processing.Threshold value can be distinguished independent setting in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.The blocking threshold value that the blocking control of the first high frequency electric source portion 65 is used can be set the threshold value of relatively high level and the threshold value of relative low level at least two kinds.Equally, the blocking threshold value that the blocking control of the second high frequency electric source portion 75 is used also can be set the threshold value of relatively high level and the threshold value of relative low level at least two kinds.
In addition, Threshold portion 123 is in moment of the supply since the first high frequency electric source portion 65 or the second high frequency electric source portion 75 high frequencies or make moment of exporting change, and blocking is set as respectively to relatively high level by threshold value.And Threshold portion 123, from the first high frequency electric source portion 65 or the second high frequency electric source portion 75 supply high frequency electrical power stabilizations, switches to relatively low level by blocking with the level of threshold value.At this, the stable state of the supply of High frequency power refers to, the reflected wave electric power REF that the coupling of the impedance of being undertaken by matching box 63,73 finishes, for example detected by transducer portion 134,144 becomes the situation of the threshold value following (comprising zero) of regulation.In addition, do not interdict control in order to utilize the reflected wave inevitably producing in the time that plasma starts, the blocking of relatively high level for example can be at the more than 25% of specified electricity value of exporting respectively from the first high frequency electric source portion 65 or the second high frequency electric source portion 75, preferably more than 25% in the scope below 100% by threshold value.In addition, in order to carry out fast the reply to reflected wave that may be relevant to paradoxical discharge, the blocking of relatively low level can be worth at the specified electricity of export respectively from the first high frequency electric source portion 65 or the second high frequency electric source portion 75 by threshold value below 5%, preferably more than 2% in the scope below 5%.
Then, the processing action as the plasma-etching apparatus 100 forming with upper type is described.First, under the state of opening at not shown gate valve, via substrate transferring opening, using the substrate S as handled object, move in container handling 1 by the fork (fork) of not shown carrying device, be handover to pedestal 11.Then, gate valve is closed, utilize exhaust apparatus 57 in container handling 1, to be evacuated to the vacuum degree of regulation.
Then, valve 41 is opened, imported and process gas to the gas diffusion space 33 of shower nozzle 31 by processing gas supply pipe 39 and gas introduction port 37 from gas supply source 45.Now, utilize mass flow controller 43 to process the flow control of gas.Be directed to the processing gas of gas diffusion space 33, the substrate S being further positioned on pedestal 11 to quilt by multiple taps 35 discharges equably, and the pressure in container handling 1 is maintained the value of regulation.
Under this state, apply High frequency power via matching box 63 to shower nozzle 31 from the first high frequency electric source portion 65.Thus, between the shower nozzle 31 as upper electrode and the pedestal 11 as lower electrode, produce high-frequency electric field, process gas and dissociate and plasma.Utilize this plasma, substrate S is implemented to etch processes.In addition, during plasma treatment, supply with to pedestal 11 High frequency power that bias voltage is used via matching box 73 from the second high frequency electric source portion 75.Thus, the ion in plasma is introduced into substrate S.Stating in detail later of the control method of supplying with about the High frequency power from the first high frequency electric source portion 65 and the second high frequency electric source portion 75.
Implementing, after etch processes, to stop the supply from the High frequency power of the first high frequency electric source portion 65 and the second high frequency electric source portion 75, stopping, after gas importing, will in container handling 1, being decompressed to the pressure of regulation.Then, open gate valve, substrate S is handover to the fork of not shown carrying device from pedestal 11, take out of substrate S from the substrate transferring of container handling 1 with opening.By above operation, the plasma etch process of substrate S is finished.
Then,, on one side with reference to Fig. 5, the control method of the supply of the High frequency power from the first high frequency electric source portion 65 and the second high frequency electric source portion 75 to carry out plasma igniting (startups) in plasma-etching apparatus 100 time describes on one side.Fig. 5 represents from the first high frequency electric source portion 65 to upper electrode (shower nozzle 31) and (pedestal 11), an example of the sequential (sequence) of soft start control when supply high frequency power start plasma respectively from the second high frequency electric source portion 75 to lower electrode.Fig. 5 (a)～(d) supply with about the electric power from the first high frequency electric source portion 65, Fig. 5 (e)～(h) supply with about the electric power from the second high frequency electric source portion 75.
In present embodiment, for the impact of inhibitory reflex ripple, the increase that electric power from the first high frequency electric source portion 65 and the second high frequency electric source portion 75 is supplied with is divided into for example two stages and carries out.The moment that the initiating signal (start/stop signal) that Fig. 5 (a) expression is sent from the MC83 of the action of control plasma-etching apparatus 100 is accepted in the first high frequency electric source portion 65.In addition, Fig. 5 (e) represents the moment that same initiating signal is accepted in the second high frequency electric source portion 75.
In addition, the variation of the threshold value that the blocking control of Fig. 5 (b) expression the first high frequency electric source portion 65 is used, the variation of the threshold value that the blocking control of Fig. 5 (f) expression the second high frequency electric source portion 75 is used.
In addition, Fig. 5 (c) represents the exporting change of the High frequency power of upper electrode being supplied with from the first high frequency electric source portion 65, and Fig. 5 (g) represents the exporting change of the High frequency power of lower electrode being supplied with from the second high frequency electric source portion 75.
In addition, Fig. 5 (d) represents the rheological parameters' change with time of the power value of the reflected wave being detected by the transducer portion 134 of upper electrode side, and Fig. 5 (h) represents the rheological parameters' change with time of the power value of the reflected wave being detected by the transducer portion 144 of lower electrode side.
In addition, the transverse axis of Fig. 5 (a)～Fig. 5 (h) represents the time.
Supply with sequential according to the electric power of present embodiment, first, the first high frequency electric source portion 65 and the second high frequency electric source portion 75 receive initiating signal at moment T1 by MC83.About the first high frequency electric source portion 65, do not start upper electrode to supply with electric power and standby.On the other hand, the time of the second high frequency electric source portion 75 from moment T1 to moment T2, improve gradually and supply with the power value lower predetermined power value (hereinafter referred to as the power value of " first stage ") of electric power when becoming than operation.Now, the second high frequency electric source portion 75, as shown in Fig. 5 (h), the reflected wave producing in lower electrode side is propagated.In this case, periodically carry out the supply of High frequency power, the electric power that reflected wave has is repressed smaller, for example, decay about 1 second～2 seconds.
And, reach the power value of first stage at moment T2 from the supply electric power of the second high frequency electric source portion 75.And then after the moment T2 elapsed time, after the reflected wave of the second high frequency electric source portion 75 is fully decayed, the supply since moment T4 by the first high frequency electric source portion 65 primary electric power, in the time to moment T5, rises to the power value of first stage.Now, not only the first high frequency electric source portion 65 but also comprise starts the second high frequency electric source portion 75 that electric power is supplied with, and reflected wave is propagated to the first high frequency electric source portion 65 and second 75 these two sides of high frequency electric source portion.About these reflected waves, because the effect of match circuit finally decays.
Then, in the time interval that the coupling that consideration reflection arrival is fully decayed finishes, the rising of the secondary supply electric power being undertaken by the second high frequency electric source portion 75 since moment T7, in the time to moment T8, rises to the power value of second stage.In Fig. 5, the setting power value when power value of this second stage becomes the operation of the second high frequency electric source portion 75.In addition, the stage of the setting power value while making the supply electric power of the second high frequency electric source portion 75 rise to operation is not limited to two stages, can be more than three phases.
Then, after the reflected wave decay of rising of supply electric power of following the second high frequency electric source portion 75, the rising of the secondary supply electric power being undertaken by the first high frequency electric source portion 65 since moment T10, in the time to moment T11, rises to the power value of second stage.In Fig. 5, the setting power value when power value of this second stage becomes the operation of the first high frequency electric source portion 65.In addition, the stage of the setting power value while making the supply electric power of the first high frequency electric source portion 65 rise to operation is not limited to two stages, can be more than three phases.
As mentioned above, in the present embodiment, make the alternately interim electric power supply sequential (soft start control) increasing of High frequency power of the second high frequency electric source portion 75 and the first high frequency electric source portion 65.Thus, in plasma-etching apparatus 100, impact that can inhibitory reflex ripple, and can be starting plasma in the short time as far as possible.
Then,, on one side with reference to Fig. 5, the setting of interdicting the blocking threshold value of reference in situation about processing on one side to interdicting control part 122 describes.As mentioned above, blocking is set by Threshold portion 123 by threshold value.Blocking can be for the first high frequency electric source portion 65, the second high frequency electric source portion 75 independent setting respectively by the size of threshold value, but the switching of relatively high level and relative low level is being carried out in the first high frequency electric source portion 65, the second high frequency electric source portion 75 interrelatedly mutually in the same time.
First, Threshold portion 123, as shown in Fig. 5 (b), (f), at initial condition (till moment T3), in the first high frequency electric source portion 65 and the second high frequency electric source portion 75, is set as respectively relatively high level by blocking by threshold value.This is because initial in the raising of plasma easily produces larger reflected wave.
Then, Threshold portion 123 after the supply of the high frequency from the second high frequency electric source portion 75 is stable, moment T3 the first high frequency electric source portion 65 with in the second high frequency electric source portion 75, blocking is all switched to relative low level with the level of threshold value.The relatively low level of threshold value for this blocking all continues same time (from moment T3 to T4) in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.During the moment T3 to T4 that does not make High frequency power change, the level of blocking threshold value is reduced, can accelerate the responsiveness for the reflected wave relevant to paradoxical discharge, paradoxical discharge can be prevented trouble before it happens.
Then,, in the time that moment T4 starts the increase of the primary electric power supply of being undertaken by the first high frequency electric source portion 65, Threshold portion 123, as shown in Fig. 5 (b), (f), resets blocking threshold value, is increased to respectively relatively high level.The level that this is relatively high all continues same time (moment T4 to T6) in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.As mentioned above, the increase of supplying with at the primary electric power being undertaken by the first high frequency electric source portion 65, proceeds to moment T5 from moment T4, therefore during this period in the first high frequency electric source portion 65 and the second high frequency electric source portion 75, is detecting respectively reflected wave electric power.The reflected wave detecting in transducer portion 134,144 compared with the second high frequency electric source portion 75, detects longly in the first high frequency electric source portion 65 that just makes electric power variation, in the time having crossed a little moment T5, finishes.The coupling of, being undertaken by match circuit finishes.From started the moment T4 moment T6 that extremely coupling finishes of increase of electric power supply by the first high frequency electric source portion 65 during, in the time of electric power variation, produce inevitable reflected wave, therefore by being relatively high level by blocking with Threshold, can start glibly plasma.
The electric power finishing in the coupling of being undertaken by match circuit, undertaken by the first high frequency electric source portion 65 is supplied with the stable stage, Threshold portion 123 moment T6 the first high frequency electric source portion 65 with in the second high frequency electric source portion 75, blocking is switched to relative low level with the level of threshold value.This blocking all continues same time (from moment T6 to T7) with the relatively low level of threshold value in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.During the moment T6 to T7 that does not make High frequency power change, reduce by the level that makes blocking threshold value, can accelerate the responsiveness for the reflected wave relevant to paradoxical discharge, paradoxical discharge can be prevented trouble before it happens.
Then,, in the time that moment T7 starts the increase of secondary electric power supply by the second high frequency electric source portion 75, Threshold portion 123, as shown in Fig. 5 (b), (f), resets blocking threshold value, is increased to respectively relatively high level.The level that this is relatively high all continues same time (from moment T7 to T9) in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.As mentioned above, the increase of supplying with at the secondary electric power being undertaken by the second high frequency electric source portion 75, proceeds to moment T8 from moment T7, therefore at this period of difference detection of reflected ripple electric power in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.The reflected wave detecting in transducer portion 134,144 compared with the first high frequency electric source portion 65, detects longly in the second high frequency electric source portion 75 that just makes electric power variation, in the time having crossed a little moment T8, finishes.The coupling of, being undertaken by match circuit finishes.From started the moment T7 moment T9 that extremely coupling finishes of increase of electric power supply by the second high frequency electric source portion 75 during, in the time of electric power variation, produce inevitable reflected wave, therefore by being relatively high level by blocking with Threshold, can start glibly plasma.
The electric power finishing in the coupling of being undertaken by match circuit, undertaken by the second high frequency electric source portion 75 is supplied with the stable stage, Threshold portion 123 moment T9 the first high frequency electric source portion 65 with in the second high frequency electric source portion 75, blocking is switched to relative low level with the level of threshold value.This blocking all continues same time (from moment T9 to T10) with the relatively low level of threshold value in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.During moment T9 to T10, owing to not making High frequency power change, reduce by the level that makes blocking threshold value, can accelerate the responsiveness for the reflected wave relevant to paradoxical discharge, can prevent in advance paradoxical discharge.
Then,, in the time that moment T10 starts the increase of secondary electric power supply of being undertaken by the first high frequency electric source portion 65, Threshold portion 123, as shown in Fig. 5 (b), (f), resets blocking threshold value, is increased to respectively relatively high level.The level that this is relatively high all continues same time (moment T10 to T12) in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.As mentioned above, the increase of supplying with at the secondary electric power being undertaken by the first high frequency electric source portion 65, proceeds to moment T11 from moment T10, is detecting respectively reflected wave electric power during this period in the first high frequency electric source portion 65 and the second high frequency electric source portion 75.The reflected wave detecting in transducer portion 134,144 compared with the second high frequency electric source portion 75, detects longly in the first high frequency electric source portion 65 that just makes electric power variation, in the time having crossed a little moment T11, finishes.The coupling of, being undertaken by match circuit finishes.From started the moment T10 moment T12 that extremely coupling finishes of increase of electric power supply by the first high frequency electric source portion 65 during, in the time of electric power variation, produce inevitable reflected wave, therefore by being relatively high level by blocking with Threshold, can improve glibly plasma.
The electric power of the second stage finishing in the coupling of being undertaken by match circuit, undertaken by the first high frequency electric source portion 65 is supplied with the stable stage, Threshold portion 123 moment T12 the first high frequency electric source portion 65 with in the second high frequency electric source portion 75, blocking is switched to relative low level with the level of threshold value.In Fig. 5, the power value of second stage becomes the setting power value while carrying out operation by the second high frequency electric source portion 75.Although diagram is omitted, this blocking with the relatively low level of threshold value the first high frequency electric source portion 65 or the second high frequency electric source portion 75 arbitrarily in, for example, till all proceeding to generation and supplying with electric power variation (, the decline of plasma) next time.
In Fig. 5, being set forth in the situation that starts plasma in plasma-etching apparatus 100 is example, but after exceeding blocking threshold value at the reflected wave being detected by the first high frequency electric source portion 65 or the second high frequency electric source portion 75, the supply of High frequency power being stopped, again improve in the situation of plasma, also can carry out the soft start control identical with Fig. 5 and the switching of threshold value.
Then,, with reference to Fig. 5 and Fig. 6, the step of the Threshold being undertaken by MC83 about a mode of the method for operation as implementing is described in plasma-etching apparatus 100.Flow table shown in Fig. 6, represents to make the setting step of the threshold value situation that the High frequency power value supplied with to pedestal 11 from the second high frequency electric source portion 75 increases.The setting step of this threshold value can comprise step S1～step S6 of Fig. 6.
First, as prerequisite, the electric power control part 121 of MC83 is sent command signal to oscillating portion 141 and calculation enlarging section 142, and the High frequency power of supplying with to pedestal 11 from the second high frequency electric source portion 75 is increased.Thus, for example starting bias voltage High frequency power from the moment T7 of Fig. 5 starts to increase.
Command signal for increasing the electric power control part 121 of above-mentioned High frequency power is sent to Threshold portion 123 simultaneously.In Fig. 6, in step S1, Threshold portion 123 receives above-mentioned command signal.Receive this command signal, then, in step S2, Threshold portion 123 is relatively high level by the blocking about reflected wave with Threshold.This blocking with threshold value comprise with transducer portion 134 threshold value relevant with reflected wave that detect by the first high frequency electric source portion 65 and with the both sides of the reflected wave being detected by the transducer portion 144 of the second high frequency electric source portion 75 about threshold value.From being started moment of increase that electric power supplies with by the second high frequency electric source portion 75 to mating between tailend, in the time of electric power variation, produce inevitable reflected wave, therefore, by being relatively high level by blocking with Threshold, can start glibly plasma.
The High frequency power value of using at bias voltage for example reaches, the value of regulation (the moment T8 of Fig. 5), oscillating portion 141 and calculation enlarging section 142 are sent to command signal, make the increase of the High frequency power that the electric power control part 121 of MC83 supplies with to pedestal 11 from the second high frequency electric source portion 75 stop (, supplying with constant electric power amount).Sent to Threshold portion 123 for the command signal that makes the electric power control part 121 that the increase of above-mentioned High frequency power stops simultaneously.In the step S3 of Fig. 6, Threshold portion 123 receives above-mentioned command signal.
Then,, in step S4, Threshold portion 123 judges that whether the High frequency power of using in source is stable.Particularly, Threshold portion 123, via the information of the detected value of the reflected wave in electric power control part 121 reference sensor portions 134, judges whether the detected value of reflected wave decays to below the threshold value of for example regulation.For example, in the case of below the detected value of reflected wave decays to the threshold value of regulation, the High frequency power that judgement source is used is stablized (YES), the threshold value that exceedes regulation at the detected value of reflected wave, and the High frequency power unstable (no) that judgement source is used.
In step S4, the High frequency power that judgement source is used stablize (YES) and situation under, then, in step S5, Threshold portion 123 judges that whether the High frequency power that bias voltage uses stable.Particularly, Threshold portion 123, via the information of the feelings Reported of the detected value of the reflected wave in electric power control part 121 reference sensor portions 144, judges whether the detected value of reflected wave decays to below the threshold value of for example regulation.For example, in the case of below the detected value of reflected wave decays to the threshold value of regulation, judge that the High frequency power that bias voltage is used stablizes (YES), the threshold value that exceedes regulation at the detected value of reflected wave, judge the High frequency power unstable (no) that bias voltage is used.
In addition, the order of step S4 and step S5 can be contrary, also can carry out in fact simultaneously.
In step S5, in the case of judging that the High frequency power that bias voltage is used stablizes (YES), then, in step S6, Threshold portion 123 is relatively low level (for example, from the moment T9 of Fig. 5 to moment T10) by blocking with Threshold.This blocking comprises both of the threshold value relevant with the reflected wave being detected by the transducer portion 134 of the second high frequency electric source portion 65 and the threshold value relevant with the reflected wave being detected by the transducer portion 144 of the second high frequency electric source portion 75 by threshold value.During not making High frequency power change, supplying with constant electric power amount, the level of blocking threshold value is reduced, can accelerate thus the reply for the reflected wave relevant to paradoxical discharge, paradoxical discharge can be prevented trouble before it happens.
By carrying out the step of above step S1～step S6, Threshold portion 123 can switch blocking to be set as relatively high level and low level by threshold value.As mentioned above, by switching being set as to relatively high level and low level, can obtain following advantage.That is, in the time making the exporting change of High frequency power, can utilize the threshold value of high level to avoid the electric power blocking of the reflected wave of not relevant to paradoxical discharge degree, can realize the smooth raising of plasma.In addition, during not making the output of High frequency power, supplying with certain electric power amount, utilize low level threshold value, can detect as early as possible the reflected wave relevant to the generation of paradoxical discharge, paradoxical discharge can be prevented trouble before it happens.
In addition, in Fig. 6, be illustrated in the setting step that makes the threshold value situation that the High frequency power value supplied with to pedestal 11 from the second high frequency electric source portion 75 increases, but the setting of threshold value in the case of the High frequency power value that makes to supply with to shower nozzle 31 from the first high frequency electric source portion 65 increases also can be carried out equally.
Above, to be illustrated as object, embodiments of the present invention are at length illustrated, but the present invention is not restricted to above-mentioned execution mode, can carries out various distortion.For example, in the above-described embodiment, enumerating the situation that makes the interim increase of quantity delivered of High frequency power improve plasma is that example is illustrated, but for making the quantity delivered Jie Duan Minus of High frequency power reduce less the situation of plasma, also can apply the present invention.
In addition, in the above-described embodiment, be two stages of relatively high level and relative low level with Threshold by blocking, also can by interdict with Threshold be more than three phases.
In addition, in the above-described embodiment, taking to upper electrode and lower electrode respectively the plasma processing apparatus of supply high frequency electric power as object, but the present invention can be applicable to lower electrode to supply with the situation of two High frequency power more than system, upper electrode is supplied with to the situation of two High frequency power more than system equally.
In addition, in the above-described embodiment, the plasma-etching apparatus of enumerating parallel plate-type is example, but the present invention is as long as supplying with in the plasma processing apparatus of two High frequency power more than system upper electrode and/or lower electrode, and there is no particular restriction can be suitable for.For example, also can be applicable to other the plasma-etching apparatus of mode such as inductance coupled plasma device.In addition, be not restricted to device for dry etching, also can be equally applicable to film formation device, cineration device etc.
In addition, the invention is not restricted to taking FPD substrate as handled object, for example also can be applicable to the situation taking semiconductor wafer, substrate used for solar batteries as handled object.
Description of reference numerals
1 ... container handling; 1a ... diapire; 1b ... sidewall; 1c ... lid; 11 ... pedestal; 12 ... base material; 13,14 ... seal member; 15 ... insulating element; 31 ... shower nozzle; 33 ... gas diffusion space; 35 ... gas discharge hole; 37 ... gas introduction port; 39 ... process gas supply pipe; 41 ... valve; 43 ... mass flow controller; 45 ... gas supply source; 51 ... exhaust opening; 53 ... blast pipe; 53a ... flange part; 55 ... APC valve; 57 ... exhaust apparatus; 61 ... supply lines; 63 ... matching box (M.B.); 65 ... the first high frequency electric source portion; 71 ... supply lines; 73 ... matching box (M.B.); 75 ... the second high frequency electric source portion; 100 ... plasma-etching apparatus.

Claims (13)

1. a plasma processing apparatus, is characterized in that, comprising:
The container handling of storage handled object;
Export multiple high frequency electric sources of the high frequency relevant to the plasma generating in described container handling;
To the multiple reflected wave test sections that detect respectively to the reflected wave of described multiple high frequency electric sources;
The electric power control part that the output of described multiple high frequency electric sources is controlled;
Blocking control part, the detected value of its reflected wave in any of described multiple high frequency electric sources exceedes the predefined blocking to each high frequency electric source to be used threshold value, and blocking is the supply of the high frequency of described multiple high frequency electric sources all; With
Threshold portion, in any of described multiple high frequency electric sources, starting the moment of supply high frequency or making the moment of exporting change that described blocking threshold value is all set as to relatively high level, whole for described multiple high frequency electric sources switch to relatively low level by described blocking with threshold value whole after the supply of high frequency is stable.
2. plasma processing apparatus as claimed in claim 1, is characterized in that:
As described multiple high frequency electric sources, at least there is the second high frequency electric source of the first high frequency electric source high frequency different from described the first high frequency electric source frequency with output,
As described multiple reflected wave test sections, there is the first reflected wave test section and extremely the second reflected wave test section of the reflected wave of described the second high frequency electric source of detection that detect to the reflected wave of described the first high frequency electric source,
Described blocking control part, the predefined blocking of detected value that exceedes the detected value of the reflected wave to described the first high frequency electric source and the reflected wave of described the second high frequency electric source respectively at the detected value of the reflected wave of described the first high frequency electric source or in any one party of the detected value of the reflected wave of described the second high frequency electric source is with threshold value, interdict the supply of described the first high frequency electric source and described the second high frequency electric source both sides' high frequency
Described Threshold portion, in any one party of described the first high frequency electric source or described the second high frequency electric source, start high frequency supply moment or make the moment of exporting change that described blocking threshold value is all set as to relatively high level, after the supply from described the first high frequency electric source and the high frequency of described the second high frequency electric source is stable, described blocking is all set as to relative low level with the level of threshold value.
3. plasma processing apparatus as claimed in claim 2, is characterized in that:
Starting in the process of described plasma, described electric power control part make respectively from the output of the high frequency of described the first high frequency electric source and from the output stage of the high frequency of described the second high frequency electric source the soft start control that increases.
4. plasma processing apparatus as claimed in claim 3, is characterized in that:
Described electric power control part is controlled, make the detected value of the detected value of the reflected wave based on described the first reflected wave test section and the reflected wave based on described the second reflected wave test section become respectively predefined startup by threshold value below after, making increases from the output of the high frequency of described the first high frequency electric source.
5. plasma processing apparatus as claimed in claim 3, is characterized in that:
Described Threshold portion, the detected value of the detected value of the reflected wave based on described the first reflected wave test section and the reflected wave based on described the second reflected wave test section become respectively predefined startup by threshold value below after, during till making to increase from the output of the high frequency of described the first high frequency electric source, be described relatively low level by described blocking with Threshold.
6. plasma processing apparatus as claimed in claim 5, is characterized in that:
Described electric power control part is controlled, make the detected value of the detected value of the reflected wave based on described the first reflected wave test section and the reflected wave based on described the second reflected wave test section become respectively predefined startup by threshold value below after, making increases from the output of the high frequency of described the second high frequency electric source.
7. plasma processing apparatus as claimed in claim 6, is characterized in that:
Described Threshold portion, the detected value of the detected value of the reflected wave based on described the first reflected wave test section and the reflected wave based on described the second reflected wave test section become predefined startup by threshold value below after, during till making to increase from the output of the high frequency of described the second high frequency electric source, be described relatively low level by described blocking with Threshold.
8. the plasma processing apparatus as described in any one in claim 2～7, is characterized in that:
The blocking of described relatively high level is the more than 25% of power-handling capability of exporting respectively from described the first high frequency electric source or described the second high frequency electric source by threshold value.
9. the plasma processing apparatus as described in any one in claim 2～8, is characterized in that:
The blocking of described relatively low level is below 5% of power-handling capability of exporting respectively from described the first high frequency electric source or described the second high frequency electric source by threshold value.
10. the plasma processing apparatus as described in any one in claim 2～9, is characterized in that:
Identical during the setting of the described relatively low level of the described blocking threshold value that described the first high frequency electric source or described the second high frequency electric source are set respectively.
11. plasma processing apparatus as described in any one in claim 2～10, is characterized in that:
Identical during the setting of the described relatively high level of the described blocking threshold value that described the first high frequency electric source or described the second high frequency electric source are set respectively.
The method of operation of 12. 1 kinds of plasma processing apparatus, it,, for generate the method for operation of the plasma processing apparatus that plasma processes handled object in described container handling, is characterized in that:
Described plasma processing apparatus comprises:
The container handling of storage handled object;
Export multiple high frequency electric sources of the high frequency relevant to the plasma generating in described container handling;
To the multiple reflected wave test sections that detect respectively to the reflected wave of described multiple high frequency electric sources;
The electric power control part that the output of described multiple high frequency electric sources is controlled; With
Blocking control part, the detected value of its reflected wave in any of described multiple high frequency electric sources exceedes the predefined blocking to each high frequency electric source to be used threshold value, and blocking is the supply of the high frequency of described multiple high frequency electric sources all,
The method of operation of described plasma processing apparatus comprises:
In any one of described multiple high frequency electric sources, starting the moment of supply high frequency or making the moment of exporting change by whole steps that are set as relatively high level of described blocking threshold value; With
Whole for described multiple high frequency electric sources, after the supply of high frequency is stable by described blocking the whole steps that switch to relatively low level by threshold value.
The method of operation of 13. plasma processing apparatus as claimed in claim 12, is characterized in that, comprising:
In the case of the exporting change that makes described high frequency,
The operation that the performance number of the reflected wave to described multiple high frequency electric sources is measured;
Whether the detected value of the reflected wave of whole high frequency electric source of the high frequency electric source that judgement comprises the exporting change that makes high frequency the operation below predefined threshold value; With
After the detected value of the reflected wave of described whole high frequency electric source becomes below predefined threshold value, make the operation of the exporting change of a described high frequency electric source.
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KR102242235B1 (en) * 2019-10-30 2021-04-20 주식회사 뉴파워 프라즈마 Monitoring method for progressive arc growth of high frequency power device for generating plasma
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KR102249085B1 (en) * 2020-10-15 2021-05-07 김형석 Rf plasma exhaust gas treatment device
KR102244519B1 (en) * 2020-10-26 2021-04-26 김형석 RF plasma incineration device capable of forming large area discharge space

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002530856A (en) * 1998-11-12 2002-09-17 ラム リサーチ コーポレーション Integrated power supply module for plasma processing system
JP2003264180A (en) * 2002-03-12 2003-09-19 Tokyo Electron Ltd Plasma treatment device and method for stopping plasma treatment
CN1444257A (en) * 2002-02-08 2003-09-24 安内华株式会社 Method and system for processing radio-frequency plasma
JP2007115860A (en) * 2005-10-20 2007-05-10 Renesas Technology Corp Manufacturing method of semiconductor device
CN101389179A (en) * 2007-09-10 2009-03-18 东京毅力科创株式会社 Plasmer processing device, plasmer processing method and storage medium
CN101754569A (en) * 2008-12-02 2010-06-23 东京毅力科创株式会社 Plasma processing apparatus and operation method of the same
CN101800149A (en) * 2009-01-26 2010-08-11 东京毅力科创株式会社 plasma processing apparatus
WO2011125733A1 (en) * 2010-04-02 2011-10-13 株式会社アルバック Film-forming apparatus
CN102687597A (en) * 2009-12-10 2012-09-19 株式会社新川 Plasma ignition device, plasma ignition method, and plasma generation device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4256064B2 (en) * 1997-08-22 2009-04-22 東京エレクトロン株式会社 Control method of plasma processing apparatus
DE60135563D1 (en) * 2001-12-07 2008-10-09 Infineon Technologies Sc300 Arrangement for monitoring the thickness of a layer which is deposited on the inside of a process chamber
JP4359521B2 (en) * 2004-02-20 2009-11-04 東京エレクトロン株式会社 Plasma processing apparatus and control method thereof
TWI574318B (en) * 2004-06-21 2017-03-11 Tokyo Electron Ltd A plasma processing apparatus, a plasma processing method, and a computer-readable recording medium
PL2259662T3 (en) * 2008-03-26 2019-10-31 Kyosan Electric Mfg Abnormal discharge suppressing device for vacuum apparatus
CN102420579A (en) * 2011-11-16 2012-04-18 中微半导体设备(上海)有限公司 Method and system for automatically realizing radio frequency power matching

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002530856A (en) * 1998-11-12 2002-09-17 ラム リサーチ コーポレーション Integrated power supply module for plasma processing system
CN1444257A (en) * 2002-02-08 2003-09-24 安内华株式会社 Method and system for processing radio-frequency plasma
JP2003264180A (en) * 2002-03-12 2003-09-19 Tokyo Electron Ltd Plasma treatment device and method for stopping plasma treatment
JP2007115860A (en) * 2005-10-20 2007-05-10 Renesas Technology Corp Manufacturing method of semiconductor device
CN101389179A (en) * 2007-09-10 2009-03-18 东京毅力科创株式会社 Plasmer processing device, plasmer processing method and storage medium
CN101754569A (en) * 2008-12-02 2010-06-23 东京毅力科创株式会社 Plasma processing apparatus and operation method of the same
CN101800149A (en) * 2009-01-26 2010-08-11 东京毅力科创株式会社 plasma processing apparatus
CN102687597A (en) * 2009-12-10 2012-09-19 株式会社新川 Plasma ignition device, plasma ignition method, and plasma generation device
WO2011125733A1 (en) * 2010-04-02 2011-10-13 株式会社アルバック Film-forming apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107535043A (en) * 2015-05-12 2018-01-02 东京毅力科创株式会社 Plasma processing apparatus and method of plasma processing
CN106941067A (en) * 2015-10-06 2017-07-11 东京毅力科创株式会社 Method for the impedance matching of plasma processing apparatus
CN106941067B (en) * 2015-10-06 2019-01-15 东京毅力科创株式会社 The method of impedance matching for plasma processing apparatus
CN107275179A (en) * 2016-03-30 2017-10-20 东京毅力科创株式会社 Plasma processing apparatus and method of plasma processing
CN107275179B (en) * 2016-03-30 2019-06-14 东京毅力科创株式会社 Plasma processing apparatus and method of plasma processing
CN111755310A (en) * 2019-03-26 2020-10-09 日本电产株式会社 Plasma processing apparatus
CN112014762A (en) * 2020-10-21 2020-12-01 佛仪科技(佛山)有限公司 Impedance matching test method, device, medium and test platform of radio frequency power supply

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