CN103938212A - Etchant for wet etching of aluminum or aluminum alloy film - Google Patents
Etchant for wet etching of aluminum or aluminum alloy film Download PDFInfo
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- CN103938212A CN103938212A CN201410074361.0A CN201410074361A CN103938212A CN 103938212 A CN103938212 A CN 103938212A CN 201410074361 A CN201410074361 A CN 201410074361A CN 103938212 A CN103938212 A CN 103938212A
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- aluminum
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- aluminum alloy
- alloy film
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Abstract
The invention relates to an etchant for the wet etching of an aluminum or aluminum alloy film. The etchant comprises 51-51.5wt% of phosphoric acid, 9.8-10.2wt% of nitric acid, 7.5-7.8wt% of acetic acid and 3.2-3.5wt% of aliphatic sulfonate and aromatic sulfonate. The above technical scheme can guarantee the simultaneous etching of two layers and improves the etching rate of a second layer.
Description
Technical field
The invention belongs to semiconducter device production field, refer to a kind of etching reagent that forms pattern for wet etching aluminum or aluminum alloy film.
Background technology
In semiconductor element or LCD element or LED, for the higher electrode of precision and grid wiring material, had and proposed to use the aluminum and its alloy material that resistance is lower, cost is low, and this technology obtains application.
The metallic film technology that is processed to form wiring micro structured pattern, mainly contains wet etch techniques, dry etching technology, ion etching technology and plasma etch techniques etc.In actual production, wet etch techniques because of its do not need special device and chemical reagent cost low, production efficiency height is the main using method in etching technique.
And adopt aluminum or aluminum alloy as wiring material, and because aluminum or aluminum alloy inevitably has the formation of bubble shape projection and penetrates insulation layer in the time forming film, cause failure of insulation, even this bubble shape projection can be touched another layer of conducting membranes, causes short circuit.On the other hand, in the time that aluminum or aluminum alloy contacts with transparency electrode Indium sesquioxide-stannic oxide (ITO), can between aluminum and its alloy and ITO, form one deck middle layer because of the existence of potential difference, increase contact resistance.
In order to overcome above-mentioned defect, prior art proposes multilayer wiring, and one deck high melting point metal layer superposes on aluminum and its alloy layer.But the production efficiency of this technology is low, be mainly to carry out layering etching.Now there is again technology to propose a kind of by the film formed multilayer wiring of multilayer, form and form the first layer by aluminum or aluminum alloy at insulation layer upper surface, on aluminum or aluminum alloy layer, form again a kind of second layer that contains at least one formation in nitrogen, oxygen, silicon or carbon, and this layer is comprised to annealing Zhu treatment process, form one and prevent aluminum or aluminum alloy bubble shape projection corrosion resistant rete, and the body material of the second layer mainly uses aluminum or aluminum alloy for master, for example aluminium nitride or aln alloy.
Although this technology has solved the bubble shape projection problem forming in aluminum or aluminum alloy, the etching solution in the time of the etching second layer contains sodium hydroxide and hot phosphoric acid; And the etching reagent of the first layer of aluminum or aluminum alloy is the phosphate aqueous solution that contains nitric acid and acetic acid, the remarkable different problems of etch-rate between each composition layer are therefore produced.Therefore there is technology to propose the improvement to etching reagent, in etching reagent, use phosphoric acid, nitric acid, acetic acid, aliphatic series or aromatic sulfonic acid or sulfonate technology, can once carry out etching to multilayer film.But this etching reagent still has weak point, i.e. the etch-rate deficiency to the second layer, in the time that hour not obvious but etching area of the etched area of needs is large, has obvious difference.
Summary of the invention
The object of the invention is to existing can disposable etching aluminum or aluminum alloy film and upper strata contain at least one improvement for the etching reagent of the thin film layer of nitrogen, oxygen, silicon or carbon, this etching reagent can contain aluminum or aluminum alloy film and upper strata thereof that at least one is minimum for the etching rate difference of the thin film layer of nitrogen, oxygen, silicon or carbon drops to, to ensure etching simultaneously.
The present invention is achieved by the following technical solutions:
For an etching reagent for wet etching aluminum or aluminum alloy film, include by weight the phosphoric acid for 51-51.5%, nitric acid, the acetic acid of 7.5-7.8% and the aliphatic sulfonate of 3.2-3.5% and the aromatic sulphonate of 9.8-10.2%.
It is sulfonate sodium that described aliphatic sulfonate and aromatic sulphonate must include in a chain.
The weight ratio of described aliphatic sulfonate and aromatic sulphonate is 1: 2.
The invention has the beneficial effects as follows:
By the technical program, can not only ensure the etched while of two-layer while, improve the etch-rate to the second layer.
Embodiment
Describe by the following examples technical scheme of the present invention in detail, should be understood that, following embodiment is only exemplary, only can be used for explaining and technical scheme of the present invention being described, and can not to be interpreted as is the restriction to technical solution of the present invention.
Be the aqueous solution at etching reagent of the present invention,, except the each component using in etching reagent, rest part is water, and water herein refers to the pure water that does not contain mineral substance and other impurity.
For an etching reagent for wet etching aluminum or aluminum alloy film, include by weight the phosphoric acid for 51-51.5%, nitric acid, the acetic acid of 7.5-7.8% and the aliphatic sulfonate of 3.2-3.5% and the aromatic sulphonate of 9.8-10.2%.
It is sulfonate sodium that described aliphatic sulfonate and aromatic sulphonate must include in a chain.
The weight ratio of described aliphatic sulfonate and aromatic sulphonate is 1: 2.
In following embodiment, its difference is only the weight ratio of each component, there is no remaining difference.
Embodiment 1
For an etching reagent for wet etching aluminum or aluminum alloy film, including is 51% phosphoric acid, 9.8% nitric acid, 7.5% acetic acid and 3.2% aliphatic sulfonate and aromatic sulphonate by weight.Wherein aliphatic sulfonate and aromatic sulphonate must include in a chain as the weight ratio of sulfonate sodium and aliphatic sulfonate and aromatic sulphonate is 1: 2.
Embodiment 2
For an etching reagent for wet etching aluminum or aluminum alloy film, including is 51.5% phosphoric acid, 9.8% nitric acid, 7.5% acetic acid and 3.2% aliphatic sulfonate and aromatic sulphonate by weight.Wherein aliphatic sulfonate and aromatic sulphonate must include in a chain as the weight ratio of sulfonate sodium and aliphatic sulfonate and aromatic sulphonate is 1: 2.
Embodiment 3
For an etching reagent for wet etching aluminum or aluminum alloy film, including is 51% phosphoric acid, 10.2% nitric acid, 7.5% acetic acid and 3.2% aliphatic sulfonate and aromatic sulphonate by weight.Wherein aliphatic sulfonate and aromatic sulphonate must include in a chain as the weight ratio of sulfonate sodium and aliphatic sulfonate and aromatic sulphonate is 1: 2.
Embodiment 4
For an etching reagent for wet etching aluminum or aluminum alloy film, including is 51.5% phosphoric acid, 10.2% nitric acid, 7.8% acetic acid and 3.5% aliphatic sulfonate and aromatic sulphonate by weight.Wherein aliphatic sulfonate and aromatic sulphonate must include in a chain as the weight ratio of sulfonate sodium and aliphatic sulfonate and aromatic sulphonate is 1: 2.
Embodiment 5
For an etching reagent for wet etching aluminum or aluminum alloy film, including is 51% phosphoric acid, 10% nitric acid, 7.6% acetic acid and 3.3% aliphatic sulfonate and aromatic sulphonate by weight.Wherein aliphatic sulfonate and aromatic sulphonate must include in a chain as the weight ratio of sulfonate sodium and aliphatic sulfonate and aromatic sulphonate is 1: 2.
6 one kinds of etching reagents for wet etching aluminum or aluminum alloy film of embodiment, including is 51.2% phosphoric acid, 10% nitric acid, 7.6% acetic acid and 3.3% aliphatic sulfonate and aromatic sulphonate by weight.Wherein aliphatic sulfonate and aromatic sulphonate must include in a chain as the weight ratio of sulfonate sodium and aliphatic sulfonate and aromatic sulphonate is 1: 2.
Claims (3)
1. for an etching reagent for wet etching aluminum or aluminum alloy film, it is characterized in that: include by weight the phosphoric acid for 51-51.5%, nitric acid, the acetic acid of 7.5-7.8% and the aliphatic sulfonate of 3.2-3.5% and the aromatic sulphonate of 9.8-10.2%.
2. the etching reagent for wet etching aluminum or aluminum alloy film according to claim 1, is characterized in that: it is sulfonate sodium that described aliphatic sulfonate and aromatic sulphonate must include in a chain.
3. the etching reagent for wet etching aluminum or aluminum alloy film according to claim 1 and 2, is characterized in that: the weight ratio of described aliphatic sulfonate and aromatic sulphonate is 1: 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410074361.0A CN103938212A (en) | 2014-03-03 | 2014-03-03 | Etchant for wet etching of aluminum or aluminum alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410074361.0A CN103938212A (en) | 2014-03-03 | 2014-03-03 | Etchant for wet etching of aluminum or aluminum alloy film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103938212A true CN103938212A (en) | 2014-07-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410074361.0A Pending CN103938212A (en) | 2014-03-03 | 2014-03-03 | Etchant for wet etching of aluminum or aluminum alloy film |
Country Status (1)
| Country | Link |
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| CN (1) | CN103938212A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1453829A (en) * | 2002-04-24 | 2003-11-05 | 三菱化学株式会社 | Etching agent and etching method |
| CN1769528A (en) * | 2004-11-03 | 2006-05-10 | 三星电子株式会社 | Etchant for conductive materials and method of manufacturing a thin film transistor array panel using the same |
| JP2007157755A (en) * | 2005-11-30 | 2007-06-21 | Kobe Steel Ltd | Method of forming wiring film |
| JP2008244205A (en) * | 2007-03-28 | 2008-10-09 | Epson Imaging Devices Corp | Etchant composition, method for forming predetermined pattern on substrate, and array substrate fabricated using the same method |
| KR20100037078A (en) * | 2003-11-14 | 2010-04-08 | 동우 화인켐 주식회사 | Etchant composition for single layer and multi layers consisting of aluminum or aluminum alloy or/and molybdenum or molybdenum alloy |
-
2014
- 2014-03-03 CN CN201410074361.0A patent/CN103938212A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1453829A (en) * | 2002-04-24 | 2003-11-05 | 三菱化学株式会社 | Etching agent and etching method |
| KR20100037078A (en) * | 2003-11-14 | 2010-04-08 | 동우 화인켐 주식회사 | Etchant composition for single layer and multi layers consisting of aluminum or aluminum alloy or/and molybdenum or molybdenum alloy |
| CN1769528A (en) * | 2004-11-03 | 2006-05-10 | 三星电子株式会社 | Etchant for conductive materials and method of manufacturing a thin film transistor array panel using the same |
| JP2007157755A (en) * | 2005-11-30 | 2007-06-21 | Kobe Steel Ltd | Method of forming wiring film |
| JP2008244205A (en) * | 2007-03-28 | 2008-10-09 | Epson Imaging Devices Corp | Etchant composition, method for forming predetermined pattern on substrate, and array substrate fabricated using the same method |
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Application publication date: 20140723 |