CN103923765A - Detergent Composition For Process Of Manufacturing Semiconductors And Displays - Google Patents
Detergent Composition For Process Of Manufacturing Semiconductors And Displays Download PDFInfo
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- CN103923765A CN103923765A CN201410016293.2A CN201410016293A CN103923765A CN 103923765 A CN103923765 A CN 103923765A CN 201410016293 A CN201410016293 A CN 201410016293A CN 103923765 A CN103923765 A CN 103923765A
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- China
- Prior art keywords
- acid
- ester
- acetic acid
- formic acid
- formic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
The invention relates to a detergent composition for process of manufacturing semiconductors and displays. The detergent composition comprises the components of: 0.01wt%-3wt% of amino acid chelant, 0.01wt%-0.5wt% of organic acid, 0.01wt%-1.0wt% of inorganic acid, 0.01wt%-5wt% of an alkali compound and 0.01wt%-98wt% of deionized DI water. Therefore the composition is an alkali with pH value in 8-13 and can simultaneously eliminate particles and organic pollutants when reverse absorption and copper corrosion are prevented. Besides, the detergent composition can further include benzoic acid or benzotriazole corrosion inhibitor. Additionally, the amino acid chelant can be replaced by the benzoic acid or the benzotriazole corrosion inhibitor. Therefore, the invention can provide the detergent composition which has excellent metal impurity eliminating capability and can simultaneously eliminate organic pollutant in restraining copper corrosion and reverse adsorption. Through controlling the corrosion speed, the invention can provide the detergent composition which can be used for copper etching, residue eliminating and various other applications.
Description
Technical field
The present invention relates to the cleanser compositions for the manufacture of the technique of semi-conductor and indicating meter.More particularly, the present invention relates to have clean, etching in the technique of manufacturing semi-conductor and TFT-LCD and remove the composition of function.
Background technology
Along with information technology is fast-developing, started to carry out miniaturization, the high-density and highly integrated of large-scale integrated circuit (LSI, ULSI, VLSI), and researched and developed in the industry polylaminate wiring technique.For completing multi-layer conductor leads, need to reduce spacing and capacity between wire.For this reason, used recently there is low-resistivity copper (Cu) as conductor material.
In manufacturing the process of semiconductor device, semiconductor device can stand clean to remove pollutents such as particle, atoms metal, organic materials, improves thus the reliability of semiconductor device.Yet because this cleaning course can cause corrosion or the reverse adhesion of copper, typical cleanser compositions is difficult to have the function that removes particle or organic pollutant of enhancing when preventing described problem.
The water-based etch residue that contains fluorochemical that the open case of Korea's patent discloses through buffering for No. 10-2004-0032111A removes agent and sanitising agent, and its pH is for being greater than 7.0 to approximately 11.0.Described invention relates to uses weak acid or protonated base as the composition that can remove resist etch residue of buffered soln, and it is being greater than within the scope of 7.0 to approximately 11.0 pH effectively.Yet the problem of this composition is, this composition can not lean on sequestrant and buffer reagent function to realize Cu corrosion and enough protection of reverse adsorption and removing of particle or organic pollutant simultaneously.
Summary of the invention
Target of the present invention is to provide cleanser compositions, and it is for the alkali based on water of pH in 8 to 13 scopes and can when preventing reverse adsorption and copper corrosion, remove particle and organic pollutant.
According to an aspect of the present invention, cleanser compositions comprise 0.01 % by weight (wt%) to the agent of 3wt% chelating amino acids, 0.01wt% to 0.5wt% organic acid, 0.01wt% to 1.0wt% mineral acid, 0.01wt% to 5wt% alkali cpd and 0.01wt% to 98wt% deionization (DI) water, thereby to make described composition be the alkali based on water of pH in 8 to 13 scopes and can when preventing reverse adsorption and copper corrosion, remove particle and organic pollutant.
Chelating amino acids agent can comprise at least one of the free following group forming of choosing: Ac-glycine, glycine, glycine-13C, glycine-2,2-d, glycine-N, N, O-d, glycine-d, L-glycine, N-glycine, Z-glycine, Z-G-NH2, glycine anhydride, glycine benzyl ester, glycine benzyl ester, glycine-1-13C, glycine-2-13C, glycine Citrate trianion, glycine cobalt salt, glycine o-cresolsulfonphthalein, glycine o-cresolsulfonphthalein, glycine ethyl ester, glycine-d2-N-Fmoc, glycine fumarate, soybean (glycine max), glycine-1-13C-15N, glycine-13C2-15N, glycine-15N, pharmaceutical grade glycine, glycine-phosphate, SILVER REAGENT glycine, glycine sodium salt, Triglycine sulfate, glycine thymolsulfonphthalein, glycinexylidide-d, glycine xylidene(s), glycine zinc salt, Boc-glycine, DNP-glycine, glycerine, G-NH2, glycinate, glycitin, glycosyl, glucosamine, glyeosine, MTH-glycine, polyglycine, PTH-glycine, TNP-glycine, triglycine, quadrol-N, N, N ', N '-tetraacethyl-13C4, ethylenediamine tetraacetic acid (EDTA)-d1, ethylenediamine tetraacetic acid (EDTA)-d4, quadrol tetrem-d12 acid, ethylenediamine tetraacetic acid (EDTA) ammonium salt, quadrol-N, N, N ', N '-tetraacethyl calcium, Ethylenediaminetetraacetic Acid Calcium Salt, cupric ethylene diamine tetraacetate salt, ethylenediamine tetraacetic acid (EDTA) two ammonium copper salt solutions, cupric ethylene diamine tetraacetate di-ammonium salts, ethylenediamine tetraacetic acid (EDTA) di-ammonium salts hydrate, ethylenediamine tetraacetic acid (EDTA) two calcium salts, ethylenediamine tetraacetic acid (EDTA) two calcium salts, ethylenediamine tetraacetic acid (EDTA) dilithium salt, ethylenediamine tetraacetic acid (EDTA) dilithium salt hydrate, ethylenediamine tetraacetic acid dipotassium magnesium salt salt, EDTA Dipotassium salt, EDTA Dipotassium salt 2-hydrate, EDTA Dipotassium salt, disodium ethylene diamine tetraacetate barium salt, Sormetal salt, disodium ethylene diamine tetraacetate cobalt salt, disodium ethylene diamine tetraacetate mantoquita, disodium ethylene diamine tetraacetate lead salt, ethylenediamine tetraacetic acid disodium magnesium salt salt, ethylenediamine tetraacetic acid disodium magnesium salt salt, disodium ethylene diamine tetraacetate manganese salt, disodium ethylene diamine tetraacetate nickel salt, disodium EDTA, disodium EDTA 2-hydrate, disodium EDTA solution, ethylenediamine tetraacetic acid disodium zinc salt salt, ethylenediamine tetraacetic acid (EDTA), EDTA-Fe (III) ammonium salt, EDTA-Fe (III) sodium salt, EDTA-Fe (III) sylvite, EDTA-Fe (III) sodium salt, EDTA-Fe (III) sodium salt 3-hydrate, EDTA-Fe (III) sodium-salt hydrate, ethylenediamine tetraacetic acid (EDTA) magnesium disodium salt, ethylenediamine tetraacetic acid (EDTA) manganese salt, quadrol-N, N, N ', N '-tetraacethyl, monoester anhydride, ethylenediamine tetraacetic acid (EDTA) one sodium bismuth salt, quadrol-N, N, N ', N '-tetraacethyl four aspartic acids eight [amide group [N-(2-amino-ethyl) maleimide]], quadrol-N, N, N ', N '-tetraacethyl four [N-(2-amino-ethyl) maleimide], ethylenediamine tetraacetic acid (EDTA) tetramethyl ester, ethylenediamine tetraacetic acid (EDTA) tetramethyl ester vitriol, ethylenediamine tetraacetic acid (EDTA) four sylvite, tetrasodium salt of EDTA, tetrasodium salt of EDTA hydrate, tetrasodium salt of EDTA 2-hydrate, tetrasodium salt of EDTA 4-hydrate, tetrasodium salt of EDTA hydrate, tetrasodium salt of EDTA hydrate, ethylenediamine tetraacetic acid (EDTA) triethyl ester hydrochloride, ethylenediamine tetraacetic acid (EDTA) tripotassium salt, ethylenediamine tetraacetic acid (EDTA) tripotassium salt 2-hydrate, trisodium EDTA salt, trisodium EDTA salt, trisodium EDTA salt 1-hydrate, trisodium EDTA salt 1-hydrate, trisodium EDTA salt 3-hydrate, ethylenediamine tetraacetic acid (EDTA) zinc disodium salt hydrate, ethylenediamine tetraacetic acid (EDTA) zinc salt, ethylenediamine tetraacetic acid (EDTA) dicarboxylic anhydride, cyclohexanediaminetetraacetic acid, anti-form-1,2-cyclohexanediaminetetraacetic acid, anti-form-1,2-cyclohexanediaminetetraacetic acid 1-hydrate, 1,2-diaminopropane tetraacethyl, diethylamino-acetic acid, diethylene triaminepentaacetic acid(DTPA) dicarboxylic anhydride, disodium ethylene diamine tetraacetate, (ethane dithio subunit four) tetraacethyl, EDTMP, oxalic acid quadrol, diethylamide acetic ethylenediamine, ethylene-diamine-tetraacetonitrile, EDTMP, ethylenediamine tetrapropionic acid(EDTP), hexamethylene-diamine tetramethylene phosphonic acid, hexamethylene-diamine four (methylene phosphonic acid), EDTA-Fe (III), methoxyimino-acetic acid, 2-methyl-acetoacetic acid, (2-methyl benzoyl) Padil, methylenedisalicylic acid, methyliminodiacetic acid, phenylglycine, adjacent phenylene oxalic acid, to phenylene oxalic acid, N, N, N ', N '-Isosorbide-5-Nitrae-phenylenediamine tetraacethyl, 1,3-propylene diamine pentaacetic acid, 1,3-propylene diamine-N, N, N ', N '-tetraacethyl, trimethylenedinitrilo-tertraacetic acid, thymus pyrimidine-1-acetic acid, 1-(benzylidene is amino) parabanic acid, 2-diethylamino methyl vinylformic acid, 4-diethylamino Whitfield's ointment, dimethyl pentanoic terephthalic acid, the tertiary Boc of second-d4-diamines-1-N-, three (quadrol) cobalt chloride, quadrol dihydrochloride, quadrol hydrobromate, ethylenediamine-hydrochloride, (quadrol) Palladous chloride (II), quadrol two-L-(+)-tartrate, 4-(methylamino) butyric acid, 2-(methylamino) ethyl sulfonic acid, methyl β-neuraminic acid, 12-methyl tetradecanoic acid, 13-methyl tetradecanoic acid, m-phenylenediamine-4-sulfonic acid, P-pHENYLENE dI AMINE-2-sulfonic acid, Ursol D-o-sulfonic acid and pyrazine tetracarboxylic acid.
In addition, organic acid can comprise at least one of the free following group forming of choosing: lactic acid, (+/-)-lactic acid, D-(-)-lactic acid, DL-LACTIC ACID, L (+)-lactic acid, (S) benzyl lactate-(-), D-ALPHA-Hydroxypropionic acid-benzyl ester, lactic acid n-butyl, Pfansteihl calcium salt, dodecyl lactate base ester, L-(-)-lactic acid ethyl ester, lactic acid ethyl ester, L-(+)-lactic acid half zinc salt, lactic acid isopentyl ester, (R)-(+)-lactic acid isobutyl, D-(-)-lactic acid lithium salts, DL-LACTIC ACID lithium salts, DL-LACTIC ACID lithium salts, L-(+)-lactic acid lithium salts, Pfansteihl lithium salts, lactic acid lithium salts, Pfansteihl magnesium salts 3-hydrate, lactic acid menthyl ester, D-(+)-lactic acid methyl ester, lactic acid methyl ester, DL-LACTIC ACID, Pfansteihl sylvite, lactic acid powder, DL-LACTIC ACID, L-(+)-lactic acid silver salt, DL-LACTIC ACID-14C sodium, D-ALPHA-Hydroxypropionic acid sodium salt, L-(+)-lactylate salt, DL-LACTIC ACID sodium salt, L (+)-lactic acid solution, lactic acid solution, L-(+)-lactic acid solution, lactic acid solution, acetic acid, acetic acid d4, acetic acid-1-13C, d4, acetic acid-13C2, acetic acid-18O2, acetic acid-2,2,2-d3, acetic acid-2-13C, 2,2,2-d3, acetic acid-d1, acetic acid-d4, second-2,2,2-d3 acid, aluminum acetate sodium salt, ammonium oxalate methyl esters, ammonium acetate mantoquita, ammonium acetate zinc salt, acetic acid n-pentyl ester, second-1,2-13C2 acid 1,1 '-acid anhydride, second-1-14C acid 1,1 '-acid anhydride, 3-acetic acid phenylo boric acid, 4-acetic acid-phenylo boric acid, acetic acid bromine diphenyl methyl ester, acetic acid 2-bromo-ethyl ester, acetic acid 3-butene-1-Ji ester, acetic acid 3-butene-2-Ji ester, acetic acid trans-2-butene base ester, acetic acid 2-tert-butylcyclohexyl ester, ro-butyl acetate, ra-butyl acetate, acetic acid 4-tert-butyl-phenyl ester, acetic acid 2-butyne base ester, acetic acid-1-13C, acetic acid-2-13C, acetic acid 2-chloro-ethyl ester, the chloro-1H-indol-3-yl of acetic acid 6-ester, acetic acid cinnamyl ester, acetic acid cobalt salt, acetic acid mantoquita, acetic acid 1-cyano group-2-propenyl ester, acetic acid 1-cyano group vinyl ester, ethyl cyclohexyl base ester, ethyl cyclohexyl base ethyl ester, second-d3 acid-D1, acetic acid 9-decylene-1-Ji ester, acetic acid is trans-2-decylene-1-Ji ester, the positive decyl ester of acetic acid, acetic acid diethoxymethyl ester, acetic acid 2-dimethyl aminoethyl ester, acetic acid 2,5-3,5-dimethylphenyl ester, acetic acid dodecyl ester, acetic acid 2-ethyl-butyl ester, acetic acid ethyl ester, acetic acid 2-(ethyl hexyl) ester, acetic acid 2-ethyl phenyl ester, acetic acid 4-ethyl phenyl ester, acetic acid formyl radical ester, acetic acid 5-formyl radical-2-furyl methyl ester, acetic acid geranyl ester, glacial acetic acid, acetic acid is trans-2-heptene-1-base ester, acetic acid n-heptyl ester, acetic acid 5-hexene-1-base ester, acetic acid cis-3-hexene-1-base ester, acetic acid is trans-2-hexene-1-base ester, acetic acid n-hexyl ester, acetic acid 2-hydroxyethyl ester, acetic acid N-hydroxy-succinamide ester, N-acetic acid-indole-3-formaldehyde, the iodo-butyl ester of acetic acid 4-, acetic acid isopentyl ester, acetic acid iso-bornyl ester, acetic acid isobutyl, acetic acid pseudoallyl ester, acetic acid 4-sec.-propyl benzyl ester, acetic acid isopropyl esters, acetic acid isopropylidene-hydrazides, acetic acid lavandula angustifolia ester, acetic acid 4-methoxy benzyl ester, acetic acid 3-methoxyl group butyl ester, acetic acid 3-methoxyl group-3-methyl butyl ester, acetic acid 2-p-methoxy-phenyl ester, acetic acid methoxy-propyl ester, acetic acid 4-methyl benzyl ester, acetic acid 2-methyl butyl ester, acetic acid 2-methylcyclohexyl ester, acetic acid cis-4-methylcyclohexyl ester, acetic acid is trans-3-methylcyclohexyl ester, acetic acid 4-methylcyclohexyl methyl ester, acetic acid methyl ester, acetic acid 3-methyl polyhexamethylene, acetic acid 1-methyl-2-oxopropyl ester, acetic acid 2-methyl-4-2-pentenyl ester, acetic acid 2-methyl amyl ester, acetic acid 3-methyl amyl ester, acetic acid 4-methyl-2-amyl group ester, acetic acid methylthiomethyl ester, acetic acid 4-methyl umbrella shape base ester, acetic acid esters of mono, acetic acid 4-p-Nitrobenzyl, acetic acid 2-nitrophenyl ester, acetic acid 4-nitrophenyl ester, acetic acid p-nitrophenyl hydrazides, acetic acid 8-nonylene-1-Ji ester, acetic acid cis-6-nonylene-1-Ji ester, acetic acid 2-nonyl ester, acetic acid n-nonyl ester, acetic acid Octadecane base ester, acetic acid 7-octene-1-Ji ester, acetic acid n-octyl ester, acetic acid oil base ester, acetic acid 2-oxo-hexamethylene-3-alkenyl esters, acetic acid 6-oxo-hexamethylene-1-alkenyl esters, acetic acid 4-oxo-cyclohexyl ester, acetic acid 2-oxo-propyl diester, acetic acid 4-amylene-1-base ester, acetic acid 2-phenoxy group ethyl ester, acetic acid phenylester, acetic acid 1-phenylethylester, acetic acid 2-phenylethylester, acetic acid propargyl ester, acetic acid 2-propionyl phenylester, acetic acid n-propyl ester, 3-(acetic acid) pyridine hydrochloride, acetic acid pyridyl salt, second-d3 acid sodium-salt, [1-14C] acetic acid sodium salt, acetic acid solution, tolyl ester between acetic acid, acetic acid o-tolyl ester, acetic acid p-methylphenyl ester, acetic acid 1-p-methylphenyl-ethyl ester, acetic acid n-tridecane base ester, acetic acid triethylamine solution, acetic acid 3,5,5-trimethylammonium polyhexamethylene, vinyl-acetic ester, acetic acid 2-ethenylphenyl ester and acetic acid 4-ethenylphenyl ester.
Mineral acid can comprise at least one of the free following group forming of choosing: hydrochloric acid and phosphoric acid.
Alkali cpd can comprise at least one of the free following group forming of choosing: Tetramethylammonium hydroxide, tetramethyl ammonium acetate, tetramethyl-benzene ammonium formiate, tetramethyl ammonium hydrogen carbonate, tetramethyl-monoammonium sulfate 1-hydrate, tetramethyl-ammonium borohydride, 4 bromide, tetramethyl ammonium chloride, Methanaminium, N,N,N-trimethyl-, fluoride, Methanaminium, N,N,N-trimethyl-, fluoride 3-hydrate, Methanaminium, N,N,N-trimethyl-, fluoride 4-hydrate, tetramethyl-ammonium formiate, tetramethyl-ammonium formate solution, tetramethyl-[α-(β-D-glucopyranosyl) phenylethylene base is amino] ammonium sulfate, tetramethyl-ammonium hexafluorophosphate, tetramethyl-hydrogen phthalate ammonium, tetramethyl-monoammonium sulfate, tetramethyl-monoammonium sulfate hydrate, Tetramethylammonium hydroxide, Tetramethylammonium hydroxide 5-hydrate, tetramethyl ammonium hydroxide solution, tetramethyl-ammonium (1-hydroxy ethylene) pentacarbonyl chromium, tetramethyl-[4-hydroxyl-alpha-(1-sulfo--β-D-glucopyranosyl) phenylethylene base is amino] ammonium sulfate, Tetramethylammonium iodide, tetramethyl-ammonium Methylsulfate, tetramethyl-ammonium nitrate, tetramethyl-octahydro three ammonium borates, tetramethyl-ammoniumper chlorate, tetramethyl-ammonium phosphate, tetramethyl-silicic acid ammonium, tetramethylsilane acid ammonium solution, tetramethyl-ammonium sulfate, tetramethyl-ammonium tetrafluoroborate, tetramethyl tetraphenyl ammonium borate, tetramethyl-thioacetic acid ammonium, tetramethyl-paratoluenesulfonic acid ammonium salt, tetramethyl-triacetoxy boron hydride ammonium, tetramethyl-tribromide ammonium, tetramethyl-trifluoro methanol ammonium hydroxide, benzyl triethyl ammonium ammonium hydroxide, benzyl trimethyl first ammonium oxide, cetyl trimethylammonium bromide, hexyl trimethylammonium bromide, methyl brometo de amonio, octadecyl trimethyl ammonium chloride, 4-n-butyl ammonium hydroxide, TBAH, TBAH 30-hydrate, the tetrabutyl (4-hydroxyl) ammonium hydroxide, Tetradecyl Trimethyl Ammonium Bromide, tetradecyl trimethyl ammonium chloride, tetraethoxide ammonium hydroxide, tetraethyl ammonium hydroxide, tetraethyl ammonium hydroxide solution, tetraethyl ammonium hydroxide solution, four n-hexyl ammonium hydroxide, tetramethyl--d12-brometo de amonio, tetramethyl--d12-ammonium chloride, tetramethyl-monoammonium sulfate, four n-octyl ammonium hydroxide, four pentyl ammonium hydroxide, four pentyl solution of ammonium hydroxide, TPAOH, triethyl phenyl ammonium hydroxide, trimethylammonium bromide, trimethyl ammonium chloride, trimethylammonium ammonium iodide, trimethylammonium hydroxide sulfonium, tetrabutyl ammonium borohydride, Tetrabutyl amonium bromide, tetrabutylammonium chloride, tetrabutyl hydrogen sulfide ammonium, tetrabutyl first ammonium oxide, four decyl ammonium chlorides, tetraethyl-ammonium borohydride, tetraethylammonium bromide, etamon chloride, tetraethyl-ammonium cyanide, tetraethyl ammonium fluoride, tetraethyl-monoammonium sulfate, tetraethyl ammonium iodide, tetraethyl-rhodan ammonium, four hexyl ammonium chlorides, four octyl group ammonium chlorides, four pentyl brometo de amonio, four pentyl ammonium iodide, four pentyl rhodan ammonium and triethyl ammonium chloride.
Cleanser compositions can be maintained to pH8 to 13.
Cleanser compositions can further comprise phenylformic acid or benzotriazole corrosion inhibitor, and wherein said phenylformic acid corrosion inhibitor can comprise at least one of the free following group forming of choosing: 5-amino-1,3-phthalic acid, 2-amino-Isosorbide-5-Nitrae-phthalic acid, 3-amino-1,2-phthalic acid, 5-amino-benzene-1,3-dioctyl phthalate, 3-amino-benzene thiophene-2-carboxylic acid, 1-amino-benzene-2,4,5-tricarboxylic acid, 1-amino-benzene-2,4,6-tricarboxylic acid, 1-amino-benzene-3,4,5-tricarboxylic acid, 5-amino-1,2,3-benzene tricarboxylic acid, 2-aminobenzophenone-2 '-formic acid, 5-amino-1-thionaphthene-2-formic acid, 4-amino-2-fluorobenzoic acid, 4-amino-3-fluorobenzoic acid, 4-amino-O-Anisic Acid, 5-amino-2-morpholinyl phenylformic acid, 2-(4-amino-benzene oxygen) phenylformic acid, nitrogen benzide-3,3 '-dioctyl phthalate, nitrogen benzide-4,4 '-dioctyl phthalate, N-benzanilide-4,4 '-dioctyl phthalate, 1,2-phthalic acid, 1,3-phthalic acid, Isosorbide-5-Nitrae-phthalic acid, benzene-1,3-dioctyl phthalate diallyl ester, 1,2-phthalic acid didecyl ester, 1,2-phthalic acid dinonyl ester, 1,2-phthalic acid diamyl ester, mellitic acid, mellitic acid hexamethyl ester, benzene pentacarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid-d, benzene-1,2,3,4-tetracarboxylic acid, 1,2,3-benzene tricarboxylic acid, 1,2,4-benzene tricarboxylic acid, 1,3,5-benzene-d3-tricarboxylic acid, 1,3,5-benzene tricarboxylic acid, benzene-1,2,4-tricarboxylic acid, benzene-1,3,5-tricarboxylic acid, 1,2,3-benzene tricarboxylic acid 2-hydrate, 1-dibenzo-p-methyl-aza-cyclobutane-3-formic acid, 1-dibenzo-p-methyl-aza-cyclobutane-2-formic acid, 1-dibenzo-p-methyl-aza-cyclobutane-3-formic acid, (1H)-benzoglyoxaline-7-formic acid, 1H-benzimidazolyl-2 radicals-formic acid, 1H-benzoglyoxaline-4-formic acid, 1H-benzoglyoxaline-5-formic acid, 1H-benzoglyoxaline-7-formic acid, 2-benzoglyoxaline formic acid, 5-benzoglyoxaline formic acid, benzoglyoxaline-5-formic acid, benzimidazole-5,6-dimethyl acid, 2,1-benzisothiazole-3-formic acid, 2,1-benzoisoxazole-3-formic acid, 1-benzocyclobutane zinecarboxylic acid, (R)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-5-formic acid, (R)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, (S)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-6-formic acid, 1,3-benzo dioxole-2-formic acid, 1,3-benzo dioxole-4-formic acid, benzo [1,3] dioxole-2-formic acid, 1-cumarone-3-formic acid, 1-cumarone-5-formic acid, 2,3-coumarilic acid, 2-benzofurancarboxylic acid, benzo (b) furans-2-formic acid, coumarilic acid, cumarone-3-formic acid, cumarone-4-formic acid, cumarone-6-formic acid, cumarone-7-formic acid, 2,3-cumarone dioctyl phthalate, benzofuraxan-5-formic acid, benzo furoxan-5-formic acid, 3H-benzo [e] indole-2-carboxylic acid, benzo [d] isoxazole-3-formic acid, benzo [d] oxazole-6-formic acid, benzoxazole-2-formic acid, BP-2-formic acid, UVINUL MS 40,4 '-dioctyl phthalate, 3,3 ', 4,4 '-benzophenone tetracarboxylic acid, benzophenone tetracarboxylic acid, BP-3,3 ', 4,4 '-tetracarboxylic acid, benzo [b] tellurium fen-2-formic acid, 1,2,3-benzothiazole-5-formic acid, 1,3-benzothiazole-6-formic acid, benzo [d] thiazole-7-formic acid, benzothiazole-2-formic acid, benzothiazole-5-formic acid, benzothiazole-6-formic acid, 1-thionaphthene-3-formic acid, 1-thionaphthene-5-formic acid, benzo [b] thiophene-2-carboxylic acid, benzo [b] thiophene-3-formic acid, benzo [b] thiophene-7-formic acid, benzo [b] thiophene-7-formic acid, thionaphthene-2-formic acid, 1H-benzotriazole-5-formic acid, benzotriazole-4-formic acid, 5-benzoxazole formic acid, 3-(benzoyl-amido)-2-thiophenic acid, 1-benzoyl-3-azetidine formic acid, 2-2-benzoyl-cyclohexane formic acid, cis-2-2-benzoyl-cyclohexane-1-formic acid, 2-benzoyl-1H-indole-3-carboxylic acid, 1-benzoyl piperidines-2-formic acid, 1-benzoyl piperidines-4-formic acid, 2-benzoyl-acidum nicotinicum, 3-benzoyl pyridine-2-formic acid, 1-benzoyl tetramethyleneimine-2-formic acid, 3-benzoyl-4-quinolinecarboxylic acid, 3-benzoyl quinoline-4-formic acid, 3-benzoyl-2-thiophenic acid, 1-(benzyl) azetidine-2-formic acid, 1-benzyl-2-azetidine formic acid, 1-benzyl-azetidine-3-formic acid, 1-benzyl-azetidine-3-formic acid, 1-benzyl azetidine-2-benzoic acid amides, 1-benzyl-4-boc-piperazine-2-formic acid, 1-benzyl rings butane-1-formic acid, 1-benzyl cyclobutane formate, 1-benzyl cyclobutane formate, 1-benzyl naphthenic acid, 1-benzyl cyclopentane-carboxylic acid, 1-benzyl cyclopropane-carboxylic acid, 1-benzyl-1H-indazole-3-formic acid, 1-benzyl indazolyl-3-formic acid, 1-benzylindole-3-formic acid, 2-benzyl isoindoline-4-formic acid, 4-benzyl-morpholine-2-formic acid, 4-benzyl-morpholine-3-formic acid, 4-benzyl morpholine-3-formic acid, 3-benzyl-2-oxazolidine formic acid, 3-benzyloxy-cyclobutane formate, 4-benzyloxy indole-2-formic acid, 5-benzyloxy-2-indolecarboxylic acid, 5-benzyloxy indole-2-formic acid, 6-benzyloxy-1H-indole-2-carboxylic acid, 6-benzyloxy-1H-indole-3-carboxylic acid, 7-benzyloxy-1H-indole-3-carboxylic acid, 6-(benzyloxy) pyridine-2-formic acid, 8-(benzyloxy) quinoline-7-formic acid, (R)-4-benzyl diethylenediamine-2-formic acid, 1-benzyl-1,3-piperazine dioctyl phthalate, 1-benzyl-Pipecolic Acid, 1-benzyl piepridine-3-formic acid, 1-benzyl piepridine-4-formic acid, 1-benzyl-tetramethyleneimine-3-formic acid, N-benzyl-3-pyrrolidinecarboxylic acid, 2-(benzyl sulfenyl) phenylformic acid, 2-benzyl-thiazolidine-4-formic acid, 2-dibenzyl formic acid, 5-bromo-benzoic acid, 4-is bromo-1,3-phthalic acid, 4-bromobenzene-1,2-dioctyl phthalate, 5-is bromo-1,3-phthalic acid, 7-bromine cumarone-2-formic acid, the bromo-1-coumarilic acid of 5-, 3-bromobenzene thiophthene-2-formic acid, the bromo-1-thionaphthene-2-of 4-formic acid, the bromo-1-thionaphthene-2-of 5-formic acid, 5-bromobenzene is [b] thiophene-3-formic acid also, the bromo-1-thionaphthene-2-of 6-formic acid, the bromo-1-thionaphthene-2-of 7-formic acid, the bromo-2-benzoxazole of 5-formic acid, 3-(tert.-butoxy) phenylformic acid, the 5-tertiary butyl-1,3-phthalic acid, 2-chlorine cumarone-5-formic acid, 3-chlorine cumarone-5-formic acid, 5-chlorine cumarone-2-formic acid, 4 '-chlorobenzophenone-2-formic acid, 3-chlorobenzene is [b]-2-thiophenic acid also, 3-chlorobenzene is [b] thiophene-2-carboxylic acid also, the chloro-1-thionaphthene-2-of 4-formic acid, the chloro-1-thionaphthene-2-of 5-formic acid, 5-chlorobenzene is [b] thiophene-3-formic acid also, the chloro-1-thionaphthene-2-of 6-formic acid, the chloro-1-thionaphthene-2-of 7-formic acid, 7-chlorobenzene is [b] thiophene-2-carboxylic acid also, the chloro-2-benzoxazole of 5-formic acid, the chloro-5-hydroxy-benzoic acid of 2-, the chloro-4-morpholinyl of 2-phenylformic acid, diphenylene-oxide-3-formic acid, diphenylene-oxide-4-formic acid, Isosorbide-5-Nitrae-dibenzyl piperazine-2-formic acid, the bromo-O-Anisic Acid of 3,5-bis-, the fluoro-4-nitrobenzoic acid of 2,5-bis-, the fluoro-2-nitrobenzoic acid of 4,5-bis-, 2,3-Dihydrobenzofuranes-7-formic acid, 3,4-dinitrobenzene-1,2-phthalic acid, 4,6-dinitrobenzene-1,3-phthalic acid, 2,5-diphenyl benzene-Isosorbide-5-Nitrae-dioctyl phthalate, 7-oxyethyl group benzo furans-2-formic acid, 4-fluorobenzene-1,3-dioctyl phthalate, 6-is fluoro-1,3-benzo dioxine-8-formic acid, the fluoro-1-thionaphthene-2-of 4-formic acid, the fluoro-1-thionaphthene-2-of 5-formic acid, the fluoro-1-thionaphthene-2-of 7-formic acid, the fluoro-4-nitrobenzoic acid of 2-, the fluoro-4-nitrobenzoic acid of 3-, 2-hydroxybenzene bamic acid, 4-hydroxyl-1,2-phthalic acid, 5-hydroxybenzene-1,2,4-tricarboxylic acid, 4-hydroxyl benzofuran-3-formic acid, 4 '-dihydroxy benaophenonel-2-formic acid, 4-(2-hydroxyl-oxethyl) phenylformic acid, 3-iodobenzene-1,2-dioctyl phthalate, 4-is iodo-1,2-phthalic acid, the iodo-benzo of 4-[b] thiophene-2-carboxylic acid, 4-(isopentyloxy) phenylformic acid, 5-methoxyl group benzo furans-2-formic acid, 7-methoxyl group benzo furans-2-formic acid, 2-(4-anisoyl) phenylformic acid, 2-methyl isophthalic acid, 4-phthalic acid, 5-methylbenzene-1,3-dioctyl phthalate, 2-methyl cumarone-7-formic acid, 3-methyl cumarone-2-formic acid, 3-methyl cumarone-5-formic acid, 6-methyl-coumarilic acid, 2-methyl benzo [b] thiophene-7-formic acid, 3-methylbenzene thiophthene-2-formic acid, 5-methyl isophthalic acid-thionaphthene-2-formic acid, 6-methyl benzo [b] thiophene-2-carboxylic acid, 2-methyl-5-benzoxazole formic acid, 5-morpholinyl-2-nitrobenzoic acid, (R)-N-benzyl-piperidines-2-formic acid, (S)-N-benzyl-piperidines-2-formic acid, 3-nitro-1,2-phthalic acid, 4-nitro-1,3-phthalic acid, 1-oil of mirbane-3,4,5-tricarboxylic acid, 5-nitro-1,2,3-benzene tricarboxylic acid, 5-nitrobenzofuran-2-formic acid, 5-nitro-1-thionaphthene-2-formic acid, 2-(4-nitrophenoxy) phenylformic acid, 3-oxo-3H-benzo [f] chromene-2-formic acid, 2-(2-propargyl alcoholate) phenylformic acid, 4-(2-2-pyrimidinyl oxy) phenylformic acid, 5-sulfo group-1,2,4-benzene tricarboxylic acid and tetra fluoro benzene-Isosorbide-5-Nitrae-dioctyl phthalate.In addition, benzotriazole corrosion inhibitor can comprise at least one of the free following group forming of choosing: 1-allyl group benzo triazole, the amino benzotriazole of 1-, the amino benzotriazole of 2-, the amino benzotriazole of 5-, 2-aminotriazole, aminotriazole, the bent piperazine of shellfish (Bemotrizinol), benthiozole (benthiazole), benzoglyoxaline, 2,1-benzisothiazole, Rochagan (benznidazol), benzobarbital (benzobarbital), Benzoestrol (benzoestrol), benzofuran phenol, benzonitrile, benzpinacone, benzpinacone, 2-[4-morpholinodithio amine, benzothiazole, benzothiazole-d, benzothiazoline, 4-benzothiazole alcohol, 5-benzothiazole alcohol, 2-[4-morpholinodithio ketone, 1H-1,2,3-benzotriazole, 1H-benzotriazole, benzotriazole, benzotriazole-d4, trichlorotoluene zotrichloride, phenylfluoroform, benzoxazole, benzoxazolone, benzoic methyl nitroazole, 2-benzoyl thiazole, benzthiazuron (benzthiazuron), 4-benzyl isothiazole, Betazole (Betazole), bismerthiazol (bismerthiazol), and Viosorb 583 (bisoctrizole), 5-bromine benzotriazole, bumetrizole (bumetrizole), butyl benzotriazole, 5-carboxyl benzotriazole, 1-chlorobenzotriazole, 5-chlorobenzotriazole, clotrimazole (clotrimazole), the dolantin song azoles (demetridazole) of rattling away, Dimetridazole (dimetridazole), Netrosylla (etisazole), etridiazole (etridiazole), fluotrimazole (fluotrimazole), fuberidazole (fuberidazole), I-hydroxybenzotriazole, 4-hydroxybenzotriazole, hydroxybenzotriazole, 2-iodine benzothiazole, Trate (labetalol), metronidazole (metronidazole), neticonazole (neticonazole), 5-nitrobenzene and triazolam, Viosorb 583 (Octrizole), 1-oxygen base benzotriazole, 5-methyl isophthalic acid H-thiazole is [4,5-d]-1,2,3-triazoles also, tetrazolium, Methylbenzotriazole, triazolam (triazolam), the chloro-1-methoxyl group-benzotriazole of 6-, 2,2 '-[(1H-benzotriazole-1-ylmethyl) imino-] di-methylcarbinol and 5-methyl isophthalic acid H-thiazole be [4,5-d]-1,2,3-triazoles (9CI) also.
According to a further aspect in the invention, cleanser compositions comprise 0.01wt% to 3wt% phenylformic acid or benzotriazole corrosion inhibitor, 0.01wt% to 0.5wt% organic acid, 0.01wt% to 1.0wt% mineral acid, 0.01wt% to 5wt% alkali cpd and 0.01wt% to 98wt%DI water.
The present invention can provide cleanser compositions, and its metallic impurity with improvement remove ability and can when preventing reverse adsorption and copper corrosion, remove organic pollutant.
By controlling etch-rate, the present invention can provide the cleanser compositions that is applicable to copper etching, residue removing and various sanitising agents.
Accompanying drawing explanation
Embodiment
Hereinafter, will set forth in more detail embodiments of the invention.
Although set forth in more detail the present invention with reference to described embodiment, should be understood that these embodiment are only for explanation, and never should regard restriction the present invention as.
Cleanser compositions of the present invention is the alkali based on water of pH in 8 to 13 scopes and can when preventing reverse adsorption and copper corrosion, removes particle and organic pollutant.Cleanser compositions can comprise 0.01wt% to the agent of 3wt% chelating amino acids, 0.01wt% to 0.5wt% organic acid, 0.01wt% to 1.0wt% mineral acid, 0.01wt% to 5wt% alkali cpd and 0.01wt% to 98wt% deionization (DI) water.
Cleanser compositions of the present invention can further comprise phenylformic acid or benzotriazole corrosion inhibitor except these components, or replaces described chelating amino acids agent with it, makes thus when preventing copper corrosion, to control etch-rate.
Cleanser compositions of the present invention is used sequestrant and mineral acid to remove metal pollutant, and institute's melts combine that removes contains oxygen or nitrogenous compound to buffer reagent to form.
Cleanser compositions of the present invention comprises that the basic solvent of pH in 8 to 13 scopes is to remove organic/inorganic particle.First, organic/inorganic particle can apply Van der Waals force (Van der Waals force) on copper surface, etching occurs afterwards and follow the part capillary phenomenon of sequestrant, removes effect subsequently with Coulomb repulsion performance organic/inorganic particle.
In cleanser compositions of the present invention, can the prevention to copper corrosion and reverse adsorption be described by basic solvent.At the pH of basic solvent, be 8 or when lower, copper is precipitable, causes thus reverse adsorption.On the other hand, at the pH of basic solvent, be 13 or when higher, copper can be changed into HCuO
2-, cause thus copper corrosion.Therefore, in the present invention, use the basic solvent of pH in 8 to 13 scopes.
In cleanser compositions of the present invention, can be by using the soaking solution effect of buffer reagent to describe that the lip-deep performance of copper maintains and prevention to change in polarity.That is to say, the part of sequestrant is the copper of M+ form from copper attracted by surfaces, uses afterwards buffer reagent to prevent adsorbing again of M+, forms thus M-N or M-O compound.This process is called soaking solution function.
In addition, cleanser compositions of the present invention can be used the ratio control copper etch-rate of deionized water, solves thus residual volume, copper loss badly and residue problems after washing.
< example 1>
Preparation comprises 2wt% ethylenediamine tetraacetic acid (EDTA) as chelating amino acids agent, as organic acid 0.5wt% acetic acid, as the 0.2wt% hydrochloric acid of mineral acid, as the 3wt% Tetramethylammonium hydroxide of alkali cpd and the composition of 94wt%DI water (DIW), with DIW, diluted 20 times afterwards, and assessed in Cu glass.In addition, use current material to carry out compare test, described current material is DIW and 0.5wt% Tetramethylammonium hydroxide (TMAH) namely, wherein only uses sequestrant (referring to table 1).
Table 1 (◎: splendid, zero: good, △: good, X: poor)
< example 2>
Preparation has as the stoste of the composition in example 1, is diluted 2,4,9 and 14 times afterwards with DIW.Then, measure etch-rate, pH and the grain count (P/C) of each thinning ratio.In addition, use DIW and 0.5wt% Tetramethylammonium hydroxide (TMAH) to carry out compare test, wherein only use sequestrant (referring to table 2).
Table 2
< example 3>
Preparation has as the stoste of the composition in example 1, is diluted 14 times afterwards with DIW.Then, by the process of argumentation, measure glass particle.In addition, use DIW to carry out compare test.
The process of argumentation is to implement in the following manner: sequentially carry out chemical treatment, water washing, water washing, water washing, and measure subsequently glass particle (referring to table 3).
Table 3
In the present invention, thinning ratio can be determined according to the etch-rate of described technique.As found out according to existing technique, the shortcoming of the lip-deep feature of copper is, the lip-deep particle increase of copper, and this plays spot defect in the region generating that has a lot of fine rules.The present invention can overcome this shortcoming.
< example 4>
Preparation has as the stoste of the composition in example 1, is diluted 20 times afterwards with DIW.Prepare the composition that there is identical component with example 1 but be adjusted to 10wt% as the Tetramethylammonium hydroxide of alkali cpd, and there is identical component with example 1 but as the hydrochloric acid of mineral acid, be adjusted to the composition of 3wt%, with DIW, diluted 14 times afterwards.These compositions stand the test of Cu wash-out, and compare the result (referring to table 4) of its result and ICP.
Table 4
Cu elution time | 5min(ppb) | 15min(ppb) | 30min(ppb) |
DIW | 0.114 | 0.204 | 0.512 |
<example 1>20 times of dilutions | 0.080 | 0.102 | 0.412 |
Anion surfactant is adjusted to 10wt% | 0.442 | 0.890 | 2.002 |
Composition | ? | ? | ? |
Mineral acid is adjusted to the composition of 3wt% | 0.160 | 0.436 | 0.788 |
As found out according to above-mentioned example, at the pH of composition, be 8 or when lower, Cu is adsorbed after wash-out again, elution amount is less increase thus.At the pH of composition, be 13 or when higher, Cu is corroded as HCuO after wash-out
2-, elution amount significantly increases thus.
< example 5>
Preparation comprises 2wt% ethylenediamine tetraacetic acid (EDTA) as chelating amino acids agent, as organic acid 0.5wt% acetic acid, as the 0.2wt% hydrochloric acid of mineral acid, as the 3wt% Tetramethylammonium hydroxide of alkali cpd and the composition of 94wt%DI water (DIW), with DIW, diluted 20 times afterwards, and in Cu glass, tested subsequently.
In addition, preparation has identical component with example 1 but with the composition of 0.1wt% and 0.2wt% phenylformic acid or the alternative chelating amino acids agent of benzotriazole corrosion inhibitor derivative, is diluted 20 times afterwards, and in Cu glass, assessed subsequently with DIW.In addition, preparation there is identical component with example 1 but further interpolation as the 0.1wt% of phenylformic acid corrosion inhibitor derivative and 0.2wt% benzotriazole-5-formic acid or as the composition of the chloro-1-methoxyl group-benzotriazole of 6-of benzotriazole corrosion inhibitor derivative, with DIW, diluted 20 times afterwards, and in Cu glass, assessed subsequently.Use 4 point type probes to carry out test (referring to table 5).
Table 5 (◎: splendid, zero: good, △: good, X: poor)
Two kinds of derivatives: 2,2 '-[(1H-benzotriazole-1-ylmethyl) imino-] di-methylcarbinol, 5-methyl isophthalic acid H-thiazole be [4,5-d]-1,2,3-triazoles (9CI) also
According to upper table, can find out, the corrosion inhibition function of etch-rate and Cu can be by adding phenylformic acid or benzotriazole corrosion inhibitor or strengthening by substituting chelating amino acids agent with phenylformic acid or benzotriazole corrosion inhibitor.
Although provide some embodiment to explain the present invention, should be understood that these embodiment just provide in explanation mode, and in the situation that not deviating from the spirit and scope of the present invention, can make various modifications, variation and change.Should only the be enclosed restriction of claims and its equivalent of scope of the present invention.
Claims (10)
1. a cleanser compositions, it comprises:
0.01wt% is to the agent of 3wt% chelating amino acids,
0.01wt% is to 0.5wt% organic acid,
0.01wt% is to 1.0wt% mineral acid,
0.01wt% is to 5wt% alkali cpd, and
0.01wt% is to 98wt% deionization DI water.
2. cleanser compositions according to claim 1, wherein said chelating amino acids agent comprises freely at least one of the following group forming of choosing: Ac-glycine, glycine, glycine-13C, glycine-2,2-d, glycine-N, N, O-d, glycine-d, L-glycine, N-glycine, Z-glycine, Z-G-NH2, glycine anhydride, glycine benzyl ester, glycine-1-13C, glycine-2-13C, glycine Citrate trianion, glycine cobalt salt, glycine o-cresolsulfonphthalein, glycine ethyl ester, glycine-d2-N-Fmoc, glycine fumarate, soybean, glycine-1-13C-15N, glycine-13C2-15N, glycine-15N, pharmaceutical grade glycine, glycine-phosphate, SILVER REAGENT glycine, glycine sodium salt, Triglycine sulfate, glycine thymolsulfonphthalein, glycinexylidide-d, glycine xylidene(s), glycine zinc salt, Boc-glycine, DNP-glycine, glycerine, G-NH2, glycinate, glycitin, glycosyl, glucosamine, glyeosine, MTH-glycine, polyglycine, PTH-glycine, TNP-glycine, triglycine, quadrol-N, N, N ', N '-tetraacethyl-13C4, ethylenediamine tetraacetic acid (EDTA)-d1, ethylenediamine tetraacetic acid (EDTA)-d4, quadrol tetrem-d12 acid, ethylenediamine tetraacetic acid (EDTA) ammonium salt, quadrol-N, N, N ', N '-tetraacethyl calcium, Ethylenediaminetetraacetic Acid Calcium Salt, cupric ethylene diamine tetraacetate salt, ethylenediamine tetraacetic acid (EDTA) two ammonium copper salt solutions, cupric ethylene diamine tetraacetate di-ammonium salts, ethylenediamine tetraacetic acid (EDTA) di-ammonium salts hydrate, ethylenediamine tetraacetic acid (EDTA) two calcium salts, ethylenediamine tetraacetic acid (EDTA) dilithium salt, ethylenediamine tetraacetic acid (EDTA) dilithium salt hydrate, ethylenediamine tetraacetic acid dipotassium magnesium salt salt, EDTA Dipotassium salt, EDTA Dipotassium salt 2-hydrate, disodium ethylene diamine tetraacetate barium salt, Sormetal salt, disodium ethylene diamine tetraacetate cobalt salt, disodium ethylene diamine tetraacetate mantoquita, disodium ethylene diamine tetraacetate lead salt, ethylenediamine tetraacetic acid disodium magnesium salt salt, disodium ethylene diamine tetraacetate manganese salt, disodium ethylene diamine tetraacetate nickel salt, disodium EDTA, disodium EDTA 2-hydrate, disodium EDTA solution, ethylenediamine tetraacetic acid disodium zinc salt salt, ethylenediamine tetraacetic acid (EDTA), EDTA-Fe (III) ammonium salt, EDTA-Fe (III) sodium salt, EDTA-Fe (III) sylvite, EDTA-Fe (III) sodium salt, EDTA-Fe (III) sodium salt 3-hydrate, EDTA-Fe (III) sodium-salt hydrate, ethylenediamine tetraacetic acid (EDTA) magnesium disodium salt, ethylenediamine tetraacetic acid (EDTA) manganese salt, quadrol-N, N, N ', N '-tetraacethyl monoester anhydride, ethylenediamine tetraacetic acid (EDTA) one sodium bismuth salt, quadrol-N, N, N ', N '-tetraacethyl four aspartic acids eight [amide group [N-(2-amino-ethyl) maleimide]], quadrol-N, N, N ', N '-tetraacethyl four [N-(2-amino-ethyl) maleimide], ethylenediamine tetraacetic acid (EDTA) tetramethyl ester, ethylenediamine tetraacetic acid (EDTA) tetramethyl ester vitriol, ethylenediamine tetraacetic acid (EDTA) four sylvite, tetrasodium salt of EDTA, tetrasodium salt of EDTA hydrate, tetrasodium salt of EDTA 2-hydrate, tetrasodium salt of EDTA 4-hydrate, tetrasodium salt of EDTA hydrate, ethylenediamine tetraacetic acid (EDTA) triethyl ester hydrochloride, ethylenediamine tetraacetic acid (EDTA) tripotassium salt, ethylenediamine tetraacetic acid (EDTA) tripotassium salt 2-hydrate, trisodium EDTA salt, trisodium EDTA salt 1-hydrate, trisodium EDTA salt 3-hydrate, ethylenediamine tetraacetic acid (EDTA) zinc disodium salt hydrate, ethylenediamine tetraacetic acid (EDTA) zinc salt, ethylenediamine tetraacetic acid (EDTA) dicarboxylic anhydride, cyclohexanediaminetetraacetic acid, anti-form-1,2-cyclohexanediaminetetraacetic acid, anti-form-1,2-cyclohexanediaminetetraacetic acid 1-hydrate, 1,2-diaminopropane tetraacethyl, diethylamino-acetic acid, diethylene triaminepentaacetic acid(DTPA) dicarboxylic anhydride, disodium ethylene diamine tetraacetate, (ethane dithio subunit four) tetraacethyl, EDTMP, ethylene diammine diacetate, diethylamide acetic ethylenediamine, ethylene-diamine-tetraacetonitrile, EDTMP, ethylenediamine tetrapropionic acid(EDTP), hexamethylene-diamine tetramethylene phosphonic acid, hexamethylene-diamine four (methylene phosphonic acid), EDTA-Fe (III), methoxyimino-acetic acid, 2-methyl-acetoacetic acid, (2-methyl benzoyl) Padil, methylenedisalicylic acid, methyliminodiacetic acid, phenylglycine, adjacent phenylene oxalic acid, to phenylene oxalic acid, N, N, N ', N '-Isosorbide-5-Nitrae-phenylenediamine tetraacethyl, 1,3-propylene diamine pentaacetic acid, 1,3-propylene diamine-N, N, N ', N '-tetraacethyl, trimethylenedinitrilo-tertraacetic acid, thymus pyrimidine-1-acetic acid, 1-(benzylidene is amino) parabanic acid, 2-diethylamino methyl vinylformic acid, 4-diethylamino Whitfield's ointment, dimethyl pentanoic terephthalic acid, the tertiary Boc of second-d4-diamines-1-N-, three (quadrol) cobalt chloride, quadrol dihydrochloride, quadrol hydrobromate, ethylenediamine-hydrochloride, (quadrol) Palladous chloride (II), quadrol two-L-(+)-tartrate, 4-(methylamino) butyric acid, 2-(methylamino) ethyl sulfonic acid, methyl β-neuraminic acid, 12-methyl tetradecanoic acid, 13-methyl tetradecanoic acid, m-phenylenediamine-4-sulfonic acid, P-pHENYLENE dI AMINE-2-sulfonic acid, Ursol D-o-sulfonic acid and pyrazine tetracarboxylic acid.
3. cleanser compositions according to claim 1, wherein said organic acid comprises freely at least one of the following group forming of choosing: lactic acid, (+/-)-lactic acid, D-(-)-lactic acid, DL-LACTIC ACID, L (+)-lactic acid, (S) benzyl lactate-(-), D-ALPHA-Hydroxypropionic acid-benzyl ester, lactic acid n-butyl, Pfansteihl calcium salt, dodecyl lactate base ester, L-(-)-lactic acid ethyl ester, lactic acid ethyl ester, L-(+)-lactic acid half zinc salt, lactic acid isopentyl ester, (R)-(+)-lactic acid isobutyl, D-(-)-lactic acid lithium salts, DL-LACTIC ACID lithium salts, DL-LACTIC ACID lithium salts, L-(+)-lactic acid lithium salts, Pfansteihl lithium salts, lactic acid lithium salts, Pfansteihl magnesium salts 3-hydrate, lactic acid menthyl ester, D-(+)-lactic acid methyl ester, lactic acid methyl ester, DL-LACTIC ACID, Pfansteihl sylvite, lactic acid powder, DL-LACTIC ACID, L-(+)-lactic acid silver salt, DL-LACTIC ACID-14C sodium, D-ALPHA-Hydroxypropionic acid sodium salt, L-(+)-lactylate salt, DL-LACTIC ACID sodium salt, L (+)-lactic acid solution, lactic acid solution, L-(+)-lactic acid solution, lactic acid solution, acetic acid, acetic acid d4, acetic acid-1-13C, d4, acetic acid-13C2, acetic acid-18O2, acetic acid-2,2,2-d3, acetic acid-2-13C, 2,2,2-d3, acetic acid-d1, acetic acid-d4, second-2,2,2-d3 acid, aluminum acetate sodium salt, ammonium oxalate methyl esters, ammonium acetate mantoquita, ammonium acetate zinc salt, acetic acid n-pentyl ester, second-1,2-13C2 acid 1,1 '-acid anhydride, second-1-14C acid 1,1 '-acid anhydride, 3-acetic acid phenylo boric acid, 4-acetic acid-phenylo boric acid, acetic acid bromine diphenyl methyl ester, acetic acid 2-bromo-ethyl ester, acetic acid 3-butene-1-Ji ester, acetic acid 3-butene-2-Ji ester, acetic acid trans-2-butene base ester, acetic acid 2-tert-butylcyclohexyl ester, ro-butyl acetate, ra-butyl acetate, acetic acid 4-tert-butyl-phenyl ester, acetic acid 2-butyne base ester, acetic acid-1-13C, acetic acid-2-13C, acetic acid 2-chloro-ethyl ester, the chloro-1H-indol-3-yl of acetic acid 6-ester, acetic acid cinnamyl ester, acetic acid cobalt salt, acetic acid mantoquita, acetic acid 1-cyano group-2-propenyl ester, acetic acid 1-cyano group vinyl ester, ethyl cyclohexyl base ester, ethyl cyclohexyl base ethyl ester, second-d3 acid-D1, acetic acid 9-decylene-1-Ji ester, acetic acid is trans-2-decylene-1-Ji ester, the positive decyl ester of acetic acid, acetic acid diethoxymethyl ester, acetic acid 2-dimethyl aminoethyl ester, acetic acid 2,5-3,5-dimethylphenyl ester, acetic acid dodecyl ester, acetic acid 2-ethyl-butyl ester, acetic acid ethyl ester, acetic acid 2-(ethyl hexyl) ester, acetic acid 2-ethyl phenyl ester, acetic acid 4-ethyl phenyl ester, acetic acid formyl radical ester, acetic acid 5-formyl radical-2-furyl methyl ester, acetic acid geranyl ester, glacial acetic acid, acetic acid is trans-2-heptene-1-base ester, acetic acid n-heptyl ester, acetic acid 5-hexene-1-base ester, acetic acid cis-3-hexene-1-base ester, acetic acid is trans-2-hexene-1-base ester, acetic acid n-hexyl ester, acetic acid 2-hydroxyethyl ester, acetic acid N-hydroxy-succinamide ester, N-acetic acid-indole-3-formaldehyde, the iodo-butyl ester of acetic acid 4-, acetic acid isopentyl ester, acetic acid iso-bornyl ester, acetic acid isobutyl, acetic acid pseudoallyl ester, acetic acid 4-sec.-propyl benzyl ester, acetic acid isopropyl esters, acetic acid isopropylidene-hydrazides, acetic acid lavandula angustifolia ester, acetic acid 4-methoxy benzyl ester, acetic acid 3-methoxyl group butyl ester, acetic acid 3-methoxyl group-3-methyl butyl ester, acetic acid 2-p-methoxy-phenyl ester, acetic acid methoxy-propyl ester, acetic acid 4-methyl benzyl ester, acetic acid 2-methyl butyl ester, acetic acid 2-methylcyclohexyl ester, acetic acid cis-4-methylcyclohexyl ester, acetic acid is trans-3-methylcyclohexyl ester, acetic acid 4-methylcyclohexyl methyl ester, acetic acid methyl ester, acetic acid 3-methyl polyhexamethylene, acetic acid 1-methyl-2-oxopropyl ester, acetic acid 2-methyl-4-2-pentenyl ester, acetic acid 2-methyl amyl ester, acetic acid 3-methyl amyl ester, acetic acid 4-methyl-2-amyl group ester, acetic acid methylthiomethyl ester, acetic acid 4-methyl umbrella shape base ester, acetic acid esters of mono, acetic acid 4-p-Nitrobenzyl, acetic acid 2-nitrophenyl ester, acetic acid 4-nitrophenyl ester, acetic acid p-nitrophenyl hydrazides, acetic acid 8-nonylene-1-Ji ester, acetic acid cis-6-nonylene-1-Ji ester, acetic acid 2-nonyl ester, acetic acid n-nonyl ester, acetic acid Octadecane base ester, acetic acid 7-octene-1-Ji ester, acetic acid n-octyl ester, acetic acid oil base ester, acetic acid 2-oxo-hexamethylene-3-alkenyl esters, acetic acid 6-oxo-hexamethylene-1-alkenyl esters, acetic acid 4-oxo-cyclohexyl ester, acetic acid 2-oxo-propyl diester, acetic acid 4-amylene-1-base ester, acetic acid 2-phenoxy group ethyl ester, acetic acid phenylester, acetic acid 1-phenylethylester, acetic acid 2-phenylethylester, acetic acid propargyl ester, acetic acid 2-propionyl phenylester, acetic acid n-propyl ester, 3-(acetic acid) pyridine hydrochloride, acetic acid pyridyl salt, second-d3 acid sodium-salt, [1-14C] acetic acid sodium salt, acetic acid solution, tolyl ester between acetic acid, acetic acid o-tolyl ester, acetic acid p-methylphenyl ester, acetic acid 1-p-methylphenyl-ethyl ester, acetic acid n-tridecane base ester, acetic acid triethylamine solution, acetic acid 3,5,5-trimethylammonium polyhexamethylene, vinyl-acetic ester, acetic acid 2-ethenylphenyl ester and acetic acid 4-ethenylphenyl ester.
4. cleanser compositions according to claim 1, wherein said mineral acid comprises freely at least one of the following group forming of choosing: hydrochloric acid and phosphoric acid.
5. cleanser compositions according to claim 1, wherein said alkali cpd comprises freely at least one of the following group forming of choosing: Tetramethylammonium hydroxide, tetramethyl ammonium acetate, tetramethyl-benzene ammonium formiate, tetramethyl ammonium hydrogen carbonate, tetramethyl-monoammonium sulfate 1-hydrate, tetramethyl-ammonium borohydride, 4 bromide, tetramethyl ammonium chloride, Methanaminium, N,N,N-trimethyl-, fluoride, Methanaminium, N,N,N-trimethyl-, fluoride 3-hydrate, Methanaminium, N,N,N-trimethyl-, fluoride 4-hydrate, tetramethyl-ammonium formiate, tetramethyl-ammonium formate solution, tetramethyl-[α-(β-D-glucopyranosyl) styrene is amino] ammonium sulfate, tetramethyl-ammonium hexafluorophosphate, tetramethyl-hydrogen phthalate ammonium, tetramethyl-monoammonium sulfate, tetramethyl-monoammonium sulfate hydrate, Tetramethylammonium hydroxide, Tetramethylammonium hydroxide 5-hydrate, tetramethyl ammonium hydroxide solution, tetramethyl-ammonium (1-hydroxy ethylene) pentacarbonyl chromium, tetramethyl-[4-hydroxyl-alpha-(1-sulfo--β-D-glucopyranosyl) styrene is amino] ammonium sulfate, Tetramethylammonium iodide, tetramethyl-ammonium Methylsulfate, tetramethyl-ammonium nitrate, tetramethyl-octahydro three ammonium borates, tetramethyl-ammoniumper chlorate, tetramethyl-ammonium phosphate, tetramethyl-silicic acid ammonium, tetramethylsilane acid ammonium solution, tetramethyl-ammonium sulfate, tetramethyl-ammonium tetrafluoroborate, tetramethyl tetraphenyl ammonium borate, tetramethyl-thioacetic acid ammonium, tetramethyl-paratoluenesulfonic acid ammonium salt, tetramethyl-triacetoxy boron hydride ammonium, tetramethyl-tribromide ammonium, tetramethyl-trifluoro methanol ammonium hydroxide, benzyl triethyl ammonium ammonium hydroxide, benzyl trimethyl first ammonium oxide, cetyl trimethylammonium bromide, hexyl trimethylammonium bromide, methyl brometo de amonio, octadecyl trimethyl ammonium chloride, 4-n-butyl ammonium hydroxide, TBAH, TBAH 30-hydrate, the tetrabutyl (4-hydroxyl) ammonium hydroxide, Tetradecyl Trimethyl Ammonium Bromide, tetradecyl trimethyl ammonium chloride, tetraethoxide ammonium hydroxide, tetraethyl ammonium hydroxide, tetraethyl ammonium hydroxide solution, tetraethyl ammonium hydroxide solution, four n-hexyl ammonium hydroxide, tetramethyl--d12-brometo de amonio, tetramethyl--d12-ammonium chloride, tetramethyl-monoammonium sulfate, four n-octyl ammonium hydroxide, four pentyl ammonium hydroxide, four pentyl solution of ammonium hydroxide, TPAOH, triethyl phenyl ammonium hydroxide, trimethylammonium bromide, trimethyl ammonium chloride, trimethylammonium ammonium iodide, trimethylammonium hydroxide sulfonium, tetrabutyl ammonium borohydride, Tetrabutyl amonium bromide, tetrabutylammonium chloride, tetrabutyl hydrogen sulfide ammonium, tetrabutyl first ammonium oxide, four decyl ammonium chlorides, tetraethyl-ammonium borohydride, tetraethylammonium bromide, etamon chloride, tetraethyl-ammonium cyanide, tetraethyl ammonium fluoride, tetraethyl-monoammonium sulfate, tetraethyl ammonium iodide, tetraethyl-rhodan ammonium, four hexyl ammonium chlorides, four octyl group ammonium chlorides, four pentyl brometo de amonio, four pentyl ammonium iodide, four pentyl rhodan ammonium and triethyl ammonium chloride.
6. cleanser compositions according to claim 1, the pH of wherein said cleanser compositions is in 8 to 13 scopes.
7. cleanser compositions according to claim 1, it further comprises: phenylformic acid or benzotriazole corrosion inhibitor.
8. cleanser compositions according to claim 7, it is amino-1 that wherein said phenylformic acid corrosion inhibitor comprises freely at least one of the following group forming of choosing: 5-, 3-phthalic acid, 2-amino-Isosorbide-5-Nitrae-phthalic acid, 3-amino-1,2-phthalic acid, 5-amino-benzene-1,3-dioctyl phthalate, 3-amino-benzene thiophene-2-carboxylic acid, 1-amino-benzene-2,4,5-tricarboxylic acid, 1-amino-benzene-2,4,6-tricarboxylic acid, 1-amino-benzene-3,4,5-tricarboxylic acid, 5-amino-1,2,3-benzene tricarboxylic acid, 2-aminobenzophenone-2 '-formic acid, 5-amino-1-thionaphthene-2-formic acid, 4-amino-2-fluorobenzoic acid, 4-amino-3-fluorobenzoic acid, 4-amino-O-Anisic Acid, 5-amino-2-morpholinyl phenylformic acid, 2-(4-amino-benzene oxygen) phenylformic acid, nitrogen benzide-3,3 '-dioctyl phthalate, nitrogen benzide-4,4 '-dioctyl phthalate, N-benzanilide-4,4 '-dioctyl phthalate, 1,2-phthalic acid, 1,3-phthalic acid, Isosorbide-5-Nitrae-phthalic acid, benzene-1,3-dioctyl phthalate diallyl ester, 1,2-phthalic acid didecyl ester, 1,2-phthalic acid dinonyl ester, 1,2-phthalic acid diamyl ester, mellitic acid, mellitic acid hexamethyl ester, benzene pentacarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid, 1,2,4,5-benzene tetracarboxylic acid-d, benzene-1,2,3,4-tetracarboxylic acid, 1,2,3-benzene tricarboxylic acid, 1,2,4-benzene tricarboxylic acid, 1,3,5-benzene-d3-tricarboxylic acid, 1,3,5-benzene tricarboxylic acid, benzene-1,2,4-tricarboxylic acid, benzene-1,3,5-tricarboxylic acid, 1,2,3-benzene tricarboxylic acid 2-hydrate, 1-dibenzo-p-methyl-aza-cyclobutane-3-formic acid, 1-dibenzo-p-methyl-aza-cyclobutane-2-formic acid, 1-dibenzo-p-methyl-aza-cyclobutane-3-formic acid, (1H)-benzoglyoxaline-7-formic acid, 1H-benzimidazolyl-2 radicals-formic acid, 1H-benzoglyoxaline-4-formic acid, 1H-benzoglyoxaline-5-formic acid, 1H-benzoglyoxaline-7-formic acid, 2-benzoglyoxaline formic acid, 5-benzoglyoxaline formic acid, benzoglyoxaline-5-formic acid, benzimidazole-5,6-dimethyl acid, 2,1-benzisothiazole-3-formic acid, 2,1-benzoisoxazole-3-formic acid, 1-benzocyclobutane zinecarboxylic acid, (R)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-5-formic acid, (R)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, (S)-Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-2-formic acid, Isosorbide-5-Nitrae-benzodioxan-6-formic acid, 1,3-benzodioxole-2-formic acid, 1,3-benzodioxole-4-formic acid, benzo [1,3] dioxole-2-formic acid, 1-cumarone-3-formic acid, 1-cumarone-5-formic acid, 2,3-coumarilic acid, 2-benzofurancarboxylic acid, benzo (b) furans-2-formic acid, coumarilic acid, cumarone-3-formic acid, cumarone-4-formic acid, cumarone-6-formic acid, cumarone-7-formic acid, 2,3-cumarone dioctyl phthalate, benzofuraxan-5-formic acid, benzo furoxan-5-formic acid, 3H-benzo [e] indole-2-carboxylic acid, benzo [d] isoxazole-3-formic acid, benzo [d] oxazole-6-formic acid, benzoxazole-2-formic acid, BP-2-formic acid, UVINUL MS 40,4 '-dioctyl phthalate, 3,3 ', 4,4 '-benzophenone tetracarboxylic acid, benzophenone tetracarboxylic acid, BP-3,3 ', 4,4 '-tetracarboxylic acid, benzo [b] tellurium fen-2-formic acid, 1,2,3-benzothiazole-5-formic acid, 1,3-benzothiazole-6-formic acid, benzo [d] thiazole-7-formic acid, benzothiazole-2-formic acid, benzothiazole-5-formic acid, benzothiazole-6-formic acid, 1-thionaphthene-3-formic acid, 1-thionaphthene-5-formic acid, benzo [b] thiophene-2-carboxylic acid, benzo [b] thiophene-3-formic acid, benzo [b] thiophene-7-formic acid, benzo [b] thiophene-7-formic acid, thionaphthene-2-formic acid, 1H-benzotriazole-5-formic acid, benzotriazole-4-formic acid, 5-benzoxazole formic acid, 3-(benzoyl-amido)-2-thiophenic acid, 1-benzoyl-3-azetidine formic acid, 2-2-benzoyl-cyclohexane formic acid, cis-2-2-benzoyl-cyclohexane-1-formic acid, 2-benzoyl-1H-indole-3-carboxylic acid, 1-benzoyl piperidines-2-formic acid, 1-benzoyl piperidines-4-formic acid, 2-benzoyl-acidum nicotinicum, 3-benzoyl pyridine-2-formic acid, 1-benzoyl tetramethyleneimine-2-formic acid, 3-benzoyl-4-quinolinecarboxylic acid, 3-benzoyl quinoline-4-formic acid, 3-benzoyl-2-thiophenic acid, 1-(benzyl) azetidine-2-formic acid, 1-benzyl-2-azetidine formic acid, 1-benzyl-azetidine-3-formic acid, 1-benzyl-azetidine-3-formic acid, 1-benzyl azetidine-2-benzoic acid amides, 1-benzyl-4-boc-piperazine-2-formic acid, 1-benzyl rings butane-1-formic acid, 1-benzyl cyclobutane formate, 1-benzyl cyclobutane formate, 1-benzyl naphthenic acid, 1-benzyl cyclopentane-carboxylic acid, 1-benzyl cyclopropane-carboxylic acid, 1-benzyl-1H-indazole-3-formic acid, 1-benzyl indazolyl-3-formic acid, 1-benzylindole-3-formic acid, 2-benzyl isoindoline-4-formic acid, 4-benzyl-morpholine-2-formic acid, 4-benzyl-morpholine-3-formic acid, 4-benzyl morpholine-3-formic acid, 3-benzyl-2-oxazolidine formic acid, 3-benzyloxy-cyclobutane formate, 4-benzyloxy indole-2-formic acid, 5-benzyloxy-2-indolecarboxylic acid, 5-benzyloxy indole-2-formic acid, 6-benzyloxy-1H-indole-2-carboxylic acid, 6-benzyloxy-1H-indole-3-carboxylic acid, 7-benzyloxy-1H-indole-3-carboxylic acid, 6-(benzyloxy) pyridine-2-formic acid, 8-(benzyloxy) quinoline-7-formic acid, (R)-4-benzyl diethylenediamine-2-formic acid, 1-benzyl-1,3-piperazine dioctyl phthalate, 1-benzyl-Pipecolic Acid, 1-benzyl piepridine-3-formic acid, 1-benzyl piepridine-4-formic acid, 1-benzyl-tetramethyleneimine-3-formic acid, N-benzyl-3-pyrrolidinecarboxylic acid, 2-(benzyl sulfenyl) phenylformic acid, 2-benzyl-thiazolidine-4-formic acid, 2-dibenzyl formic acid, 5-bromo-benzoic acid, 4-is bromo-1,3-phthalic acid, 4-bromobenzene-1,2-dioctyl phthalate, 5-is bromo-1,3-phthalic acid, 7-bromine cumarone-2-formic acid, the bromo-1-coumarilic acid of 5-, 3-bromobenzene thiophthene-2-formic acid, the bromo-1-thionaphthene-2-of 4-formic acid, the bromo-1-thionaphthene-2-of 5-formic acid, 5-bromobenzene is [b] thiophene-3-formic acid also, the bromo-1-thionaphthene-2-of 6-formic acid, the bromo-1-thionaphthene-2-of 7-formic acid, the bromo-2-benzoxazole of 5-formic acid, 3-(tert.-butoxy) phenylformic acid, the 5-tertiary butyl-1,3-phthalic acid, 2-chlorine cumarone-5-formic acid, 3-chlorine cumarone-5-formic acid, 5-chlorine cumarone-2-formic acid, 4 '-chlorobenzophenone-2-formic acid, 3-chlorobenzene is [b]-2-thiophenic acid also, 3-chlorobenzene is [b] thiophene-2-carboxylic acid also, the chloro-1-thionaphthene-2-of 4-formic acid, the chloro-1-thionaphthene-2-of 5-formic acid, 5-chlorobenzene is [b] thiophene-3-formic acid also, the chloro-1-thionaphthene-2-of 6-formic acid, the chloro-1-thionaphthene-2-of 7-formic acid, 7-chlorobenzene is [b] thiophene-2-carboxylic acid also, the chloro-2-benzoxazole of 5-formic acid, the chloro-5-hydroxy-benzoic acid of 2-, the chloro-4-morpholinyl of 2-phenylformic acid, diphenylene-oxide-3-formic acid, diphenylene-oxide-4-formic acid, Isosorbide-5-Nitrae-dibenzyl piperazine-2-formic acid, the bromo-O-Anisic Acid of 3,5-bis-, the fluoro-4-nitrobenzoic acid of 2,5-bis-, the fluoro-2-nitrobenzoic acid of 4,5-bis-, 2,3-Dihydrobenzofuranes-7-formic acid, 3,4-dinitrobenzene-1,2-phthalic acid, 4,6-dinitrobenzene-1,3-phthalic acid, 2,5-diphenyl benzene-Isosorbide-5-Nitrae-dioctyl phthalate, 7-oxyethyl group benzo furans-2-formic acid, 4-fluorobenzene-1,3-dioctyl phthalate, 6-is fluoro-1,3-benzo dioxine-8-formic acid, the fluoro-1-thionaphthene-2-of 4-formic acid, the fluoro-1-thionaphthene-2-of 5-formic acid, the fluoro-1-thionaphthene-2-of 7-formic acid, the fluoro-4-nitrobenzoic acid of 2-, the fluoro-4-nitrobenzoic acid of 3-, 2-hydroxybenzene bamic acid, 4-hydroxyl-1,2-phthalic acid, 5-hydroxybenzene-1,2,4-tricarboxylic acid, 4-hydroxyl benzofuran-3-formic acid, 4 '-dihydroxy benaophenonel-2-formic acid, 4-(2-hydroxyl-oxethyl) phenylformic acid, 3-iodobenzene-1,2-dioctyl phthalate, 4-is iodo-1,2-phthalic acid, the iodo-benzo of 4-[b] thiophene-2-carboxylic acid, 4-(isopentyloxy) phenylformic acid, 5-methoxyl group benzo furans-2-formic acid, 7-methoxyl group benzo furans-2-formic acid, 2-(4-anisoyl) phenylformic acid, 2-methyl isophthalic acid, 4-phthalic acid, 5-methylbenzene-1,3-dioctyl phthalate, 2-methyl cumarone-7-formic acid, 3-methyl cumarone-2-formic acid, 3-methyl cumarone-5-formic acid, 6-methyl-coumarilic acid, 2-methyl benzo [b] thiophene-7-formic acid, 3-methylbenzene thiophthene-2-formic acid, 5-methyl isophthalic acid-thionaphthene-2-formic acid, 6-methyl benzo [b] thiophene-2-carboxylic acid, 2-methyl-5-benzoxazole formic acid, 5-morpholinyl-2-nitrobenzoic acid, (R)-N-benzyl-piperidines-2-formic acid, (S)-N-benzyl-piperidines-2-formic acid, 3-nitro-1,2-phthalic acid, 4-nitro-1,3-phthalic acid, 1-oil of mirbane-3,4,5-tricarboxylic acid, 5-nitro-1,2,3-benzene tricarboxylic acid, 5-nitrobenzofuran-2-formic acid, 5-nitro-1-thionaphthene-2-formic acid, 2-(4-nitrophenoxy) phenylformic acid, 3-oxo-3H-benzo [f] chromene-2-formic acid, 2-(2-propargyl alcoholate) phenylformic acid, 4-(2-2-pyrimidinyl oxy) phenylformic acid, 5-sulfo group-1,2,4-benzene tricarboxylic acid and tetra fluoro benzene-Isosorbide-5-Nitrae-dioctyl phthalate.
9. cleanser compositions according to claim 7, wherein said benzotriazole corrosion inhibitor comprises freely at least one of the following group forming of choosing: 1-allyl group benzo triazole, the amino benzotriazole of 1-, the amino benzotriazole of 2-, the amino benzotriazole of 5-, 2-aminotriazole, aminotriazole, the bent piperazine of shellfish (Bemotrizinol), benthiozole (benthiazole), benzoglyoxaline, 2,1-benzisothiazole, Rochagan (benznidazol), benzobarbital (benzobarbital), Benzoestrol (benzoestrol), benzofuran phenol, benzonitrile, benzpinacone, benzpinacone, 2-[4-morpholinodithio amine, benzothiazole, benzothiazole-d, benzothiazoline, 4-benzothiazole alcohol, 5-benzothiazole alcohol, 2-[4-morpholinodithio ketone, 1H-1,2,3-benzotriazole, 1H-benzotriazole, benzotriazole, benzotriazole-d4, trichlorotoluene zotrichloride, phenylfluoroform, benzoxazole, benzoxazolone, benzoic methyl nitroazole, 2-benzoyl thiazole, benzthiazuron (benzthiazuron), 4-benzyl isothiazole, Betazole (Betazole), bismerthiazol (bismerthiazol), and Viosorb 583 (bisoctrizole), 5-bromine benzotriazole, bumetrizole (bumetrizole), butyl benzotriazole, 5-carboxyl benzotriazole, 1-chlorobenzotriazole, 5-chlorobenzotriazole, clotrimazole (clotrimazole), the dolantin song azoles (demetridazole) of rattling away, Dimetridazole (dimetridazole), Netrosylla (etisazole), etridiazole (etridiazole), fluotrimazole (fluotrimazole), fuberidazole (fuberidazole), I-hydroxybenzotriazole, 4-hydroxybenzotriazole, hydroxybenzotriazole, 2-iodine benzothiazole, Trate (labetalol), metronidazole (metronidazole), neticonazole (neticonazole), 5-nitrobenzene and triazolam, Viosorb 583 (Octrizole), 1-oxygen base benzotriazole, 5-methyl isophthalic acid H-thiazole is [4,5-d]-1,2,3-triazoles also, tetrazolium, Methylbenzotriazole, triazolam (triazolam), the chloro-1-methoxyl group-benzotriazole of 6-, 2,2 '-[(1H-benzotriazole-1-ylmethyl) imino-] di-methylcarbinol and 5-methyl isophthalic acid H-thiazole be [4,5-d]-1,2,3-triazoles (9CI) also.
10. a cleanser compositions, it comprises: 0.01wt% to 3wt% phenylformic acid or benzotriazole corrosion inhibitor, 0.01wt% to 0.5wt% organic acid, 0.01wt% to 1.0wt% mineral acid, 0.01wt% to 5wt% alkali cpd and 0.01wt% to 98wt% deionized water DI water.
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CN106547178A (en) * | 2015-09-23 | 2017-03-29 | 气体产品与化学公司 | Cleaning formulation |
CN114712941A (en) * | 2022-04-12 | 2022-07-08 | 聚创(广东)智能装备有限公司 | Method for cleaning monoammonium phosphate filter cloth |
WO2023040308A1 (en) | 2021-09-14 | 2023-03-23 | 浙江奥首材料科技有限公司 | Copper surface passivation composition, use thereof, and photoresist stripping solution containing same |
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KR102261638B1 (en) * | 2013-11-15 | 2021-06-08 | 삼성디스플레이 주식회사 | Cleaner Composition and method of manufacturing metal line using the same |
KR102326028B1 (en) * | 2015-01-26 | 2021-11-16 | 삼성디스플레이 주식회사 | Cleaner Composition for Process of Manufacturing Semiconductor and Display |
KR102360224B1 (en) * | 2015-02-16 | 2022-03-14 | 삼성디스플레이 주식회사 | Cleaning composition |
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CN106547178A (en) * | 2015-09-23 | 2017-03-29 | 气体产品与化学公司 | Cleaning formulation |
WO2023040308A1 (en) | 2021-09-14 | 2023-03-23 | 浙江奥首材料科技有限公司 | Copper surface passivation composition, use thereof, and photoresist stripping solution containing same |
CN114712941A (en) * | 2022-04-12 | 2022-07-08 | 聚创(广东)智能装备有限公司 | Method for cleaning monoammonium phosphate filter cloth |
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