CN103922738B - La2Zr2O7 transition-layer gradient film structure, preparation and application thereof - Google Patents
La2Zr2O7 transition-layer gradient film structure, preparation and application thereof Download PDFInfo
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- CN103922738B CN103922738B CN201410088329.8A CN201410088329A CN103922738B CN 103922738 B CN103922738 B CN 103922738B CN 201410088329 A CN201410088329 A CN 201410088329A CN 103922738 B CN103922738 B CN 103922738B
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CN103922738B true CN103922738B (en) | 2015-07-01 |
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CN109830740B (en) * | 2019-02-14 | 2020-11-06 | 北京工业大学 | Solid electrolyte and all-solid-state battery |
CN110904440B (en) * | 2019-12-05 | 2021-09-10 | 西安理工大学 | Titanium-doped yttrium zirconate buffer layer material capable of effectively blocking oxygen diffusion and preparation method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101219896A (en) * | 2008-01-25 | 2008-07-16 | 北京工业大学 | Zr doping CeO2 buffer layer thin film and method for producing the same |
CN101320604A (en) * | 2008-07-04 | 2008-12-10 | 北京工业大学 | SrZrO3 doped YBCO thin film and preparation method thereof |
CN101546630A (en) * | 2008-03-29 | 2009-09-30 | Z能源电力有限公司 | High-temperature superconductor allocation |
CN101624286A (en) * | 2009-07-03 | 2010-01-13 | 北京工业大学 | La -CeO2 doped transition layer film and preparation method thereof |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101219896A (en) * | 2008-01-25 | 2008-07-16 | 北京工业大学 | Zr doping CeO2 buffer layer thin film and method for producing the same |
CN101546630A (en) * | 2008-03-29 | 2009-09-30 | Z能源电力有限公司 | High-temperature superconductor allocation |
CN101320604A (en) * | 2008-07-04 | 2008-12-10 | 北京工业大学 | SrZrO3 doped YBCO thin film and preparation method thereof |
CN101624286A (en) * | 2009-07-03 | 2010-01-13 | 北京工业大学 | La -CeO2 doped transition layer film and preparation method thereof |
Non-Patent Citations (1)
Title |
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化学溶液法制备涂层导体过渡层La2Zr2O7厚膜的研究;王榕等;《人工晶体学报》;20100430;第39卷(第2期);396-400 * |
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Effective date of registration: 20170717 Address after: Support 530000 Nanning Road, the Guangxi Zhuang Autonomous Region No. 32 South Lake Garden 4-2004 Patentee after: Guo Fuliang Address before: 100124 Chaoyang District, Beijing Ping Park, No. 100 Patentee before: Beijing University of Technology |
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Effective date of registration: 20170720 Address after: Support 530000 Nanning Road, the Guangxi Zhuang Autonomous Region No. 32 South Lake Garden 4-2004 Patentee after: Guo Fuliang Address before: 100124 Chaoyang District, Beijing Ping Park, No. 100 Patentee before: Beijing University of Technology |
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Effective date of registration: 20221020 Address after: A1501, Innovation Plaza, No. 2007, Pingshan Avenue, Liulian Community, Pingshan Street, Pingshan District, Shenzhen, Guangdong 518118 Patentee after: Shenchuang Superconductor (Shenzhen) Technology Co.,Ltd. Address before: 4-2004, Nanhu Scenic Garden, No. 32, Shuangyong Road, Nanning City, 530000 Guangxi Zhuang Autonomous Region Patentee before: Guo Fuliang |
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