CN101320604B - SrZrO3 doped YBCO thin film and preparation method thereof - Google Patents
SrZrO3 doped YBCO thin film and preparation method thereof Download PDFInfo
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- CN101320604B CN101320604B CN200810116140XA CN200810116140A CN101320604B CN 101320604 B CN101320604 B CN 101320604B CN 200810116140X A CN200810116140X A CN 200810116140XA CN 200810116140 A CN200810116140 A CN 200810116140A CN 101320604 B CN101320604 B CN 101320604B
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Abstract
A SrZrO3 doped YBCO film and a preparation method thereof belong to the technology field of the preparation of the superconducting material with high-temperature coat. The original PLD method has the defect that the equipment is complicated, the cost is high and the proportion of the dopant is not easy to control. The film provided by the invention consists of 1 to 15 molar percent of SrZrO and 85 to 99molar percent of YBCO. The invention prepares YBCO precursor solution by the deposition method of trifluoroacetic acid and metal-organic compound; the YBCO precursor solution and the propionatesolution comprising strontium acetate and zirconium acetylacetone are mixed to obtain the SrZrO3 doped YBCO precursor solution; then the SrZrO3 doped YBCO precursor solution is spin-coated or dip-coated on the base, and the base is sintered under the wet oxygen atmosphere and below 400 DEG C; finally the base is high-temperature sintered under the wet ArO2 mixing atmosphere and between 750 to 850DEG C to obtain the SrZrO3 doped YBCO film. The film of the invention has the advantages of higher critical current density, higher critical conversion temperature and biaxial texture in the magneticfiled, simple equipment and low cost.
Description
Technical field
The invention belongs to the high temperature superconducting materia preparing technical field, be specifically related to the technology of preparing of conductor of high-temperature superconductor coat superconducting thin film.
Background technology
Along with deepening continuously of laboratory research, the practicability of YBCO superconductor is closed on day by day.Yet to really reach practicability, not only require it under low temperature does not have magnetic field, to have high current capacity (I
c), and also keep high superconductivity as much as possible at the high temperature High-Field.At present, by preparation multilayer film method, people can prepare I
cUp to the YBCO thick film of 1200A/cm-Width, be enough to satisfy the requirement of under null field, using.But along with the increase in magnetic field, flux creep is aggravation gradually also, the J of ybco film
cBe index and reduce, therefore only depend on the raising film thickness can't satisfy the requirement of under magnetic field, using.How to improve film performance under magnetic field, become the key of current research.Wherein by the doping of nano particle, introducing pinning center in ybco film, is to reduce flux creep to improve the most frequently used method of YBCO superconducting thin film field performance.A lot of research groups have successfully adopted the PLD method to prepare the ybco film of perovskite structural material and rare-earth oxide nano particles doping, although the performance of film is much higher than plain ybco film under magnetic field, but mixing, the PLD method needs high vacuum, equipment complexity not only, the cost height, the most important thing is that it can't change the alloy proportioning flexibly, and be not suitable for developing the long band of high-temperature superconductor of practicability.Compare the PLD physical method, MOD method filming equipment is simple, needing no vacuum, deposition velocity is fast, be easy to make long band, be widely used for preparing at present pure high performance ybco film, but the research of the ybco film that the preparation of employing MOD method is mixed is actually rare.
Summary of the invention
The objective of the invention is to solve the problems of the prior art, and the SrZrO that a kind of equipment is simple, cost is low is provided
3Ybco film that mixes and preparation method thereof.
SrZrO provided by the present invention
3The ybco film that mixes is by SrZrO
3Form with YBCO, wherein, SrZrO
3Molar percentage be 1-15%, the molar percentage of YBCO is 85-99%.
The present invention adopts MOD chemical method with low cost, by in the YBCO precursor liquid, add the alloy precursor liquid, again through filming, low temperature and high temperature sintering obtain SrZrO
3The ybco film that mixes, concrete steps are as follows:
1) SrZrO
3The preparation of the YBCO precursor aqueous solution that mixes:
A, acetic acid yttrium, barium acetate and Schweinfurt green were dissolved in the deionized water in 1: 2: 3 in molar ratio, after adding is higher than the trifluoroacetic acid complexing of stoichiometric proportion 10% again, obtain blue transparent colloidal liquid in 50 ℃ of following evaporation and concentration, with the methyl alcohol dilution, obtain the YBCO precursor aqueous solution of 1.0-2.0mol/L;
B, strontium acetate and acetylacetone,2,4-pentanedione zirconium were dissolved in the propionic acid in 1: 1 in molar ratio, obtain the SrZrO that the metal ion total concentration is 0.1-1.0mol/L
3Precursor aqueous solution;
C, with SrZrO
3Precursor aqueous solution mixes with the YBCO precursor aqueous solution, obtains SrZrO
3The YBCO precursor aqueous solution that mixes, wherein, SrZrO
3Molar percentage be 1-15%, the molar percentage of YBCO is 85-99%;
2) coating of film: with SrZrO
3The mode of the YBCO precursor aqueous solution that mixes by spin coating or dip-coating is coated to and obtains the gel wet film in the substrate;
3) low temperature presintering: the pre-burning in being lower than 400 ℃ wet oxygen of coated gel wet film is obtained forerunner's amorphous film, wherein, the programming rate of room temperature to 190 ℃ is 135 ℃/hour, programming rate between 190 ℃-250 ℃ is 5-10 ℃/hour, programming rate between 250 ℃-300 ℃ is 30 ℃/hour, and the programming rate between 300 ℃-400 ℃ is 300 ℃/hour;
4) high temperature sintering: in 750-850 ℃ of following sintering 1-4 hour, in the sintering process, in preceding 2/3 time period, feeding oxygen content was the wet Ar/O of 100-10000ppm with forerunner's amorphous film
2Gaseous mixture, in 1/3 time period of back, feeding oxygen content is the dried Ar/O of 100-10000ppm
2It is the dried Ar/O of 100-10000ppm continuing to feed oxygen content that gaseous mixture, sintering finish the back
2Lower the temperature under the gaseous mixture condition, when temperature drops to 500 ℃, change purity oxygen into, and be incubated 2-4 hour, obtain SrZrO with the stove cooling
3The ybco film that mixes.
Wherein, when step 2) in adopt the spin coating mode with SrZrO
3When the YBCO precursor aqueous solution that mixes was coated in the substrate, the revolution of filming was 3000-6000 rev/min, and the time of filming is 1-3 minute; When adopting the mode of dip-coating, the pull rate of filming is the 5-80 mm/min.
Wet oxygen described in the step 3) is to realize that by the container that distilled water is housed that oxygen is fed water-bath heating bath temperature is 20-50 ℃, oxygen flow be the 0.2-1.0 liter/minute;
Wet Ar/O described in the step 4)
2Gaseous mixture is by with Ar/O
2Gaseous mixture feeds that the container that distilled water is housed of water-bath heating realizes, bath temperature is 30-50 ℃, mixed gas flow be the 0.2-1.5 liter/minute.
Compared with prior art, the present invention has following beneficial effect:
1) compare present widely used PLD method doping techniques, the employed equipment of the inventive method is simple, and cost is low, needing no vacuum, deposition velocity is fast, the most important thing is that thin film composition controls easily, and can arbitrarily change alloy and proportioning thereof, be more suitable for developing the long band of high-temperature superconductor of practicability.
2) SrZrO of Can Zaing
3Nano particle can be used as pinning center, reduces the magnetic field wriggling under the magnetic field, improves the critical current density of ybco film under magnetic field.Under uniform temp, magnetic field is high more, the J of doped samples
cBe higher than unadulterated sample more; Under identical applying a magnetic field, when temperature is high more, the J of doped samples
cBe higher than unadulterated sample more.Doped samples has higher superconductivity under the high temperature High-Field, comparing plain sample more has application prospect.
Description of drawings
The XRD figure of gained film among Fig. 1: the embodiment 1.
The J of gained film among Fig. 2: the embodiment 2
cCurve (77K) with changes of magnetic field.
(102) face Φ scanning result of gained film among Fig. 3: the embodiment 2.
The critical transition temperature T of gained film among Fig. 4: the embodiment 3
cThe result.
The J of gained film among Fig. 5: the embodiment 4
cCurve (65K) with changes of magnetic field
The J of gained film among Fig. 6: the embodiment 5
cCurve (50K) with changes of magnetic field.
Below in conjunction with the drawings and the specific embodiments the present invention is described in further details.
Embodiment
1) with 0.01mol acetic acid yttrium, 0.02mol barium acetate and 0.03mol Schweinfurt green are dissolved in the deionized water, add the complexing of 11ml trifluoroacetic acid again after, obtain blue transparent colloidal liquid in 50 ℃ of following evaporation and concentration, with the methyl alcohol dilution, obtain the YBCO precursor aqueous solution of 1.0mol/L;
Strontium acetate and acetylacetone,2,4-pentanedione zirconium were dissolved in the propionic acid in 1: 1 in molar ratio, obtain the SrZrO that the metal ion total concentration is 1.0mol/L
3Precursor aqueous solution;
Press SrZrO
3: the molar percentage of YBCO is 1% with SrZr0
3Precursor aqueous solution mixes with the YBCO precursor aqueous solution, obtains SrZrO
3The YBCO precursor aqueous solution that mixes;
2) adopt spin coating method with SrZrO
3The YBCO precursor aqueous solution that mixes is coated to and obtains wet film in the substrate, and the revolution of filming is 3000 rev/mins, and the time of filming is 3 minutes;
3) wet film (is fed oxygen that the container that distilled water is housed of 50 ℃ water-bath heating realizes at the wet oxygen below 400 ℃, oxygen flow is 0.2 liter/minute) in low temperature presintering obtain forerunner's amorphous film, wherein, the programming rate of room temperature to 190 ℃ is 135 ℃/hour, programming rate between 190 ℃-250 ℃ is 5 ℃/hour, programming rate between 250 ℃-300 ℃ is 30 ℃/hour, and the programming rate between 300 ℃-400 ℃ is 300 ℃/hour;
4) forerunner's amorphous film is incubated 4 hours down at 750 ℃, wherein, the wet Ar/O of feeding in preceding 2.6 hours
2(oxygen content is 100ppm to gaseous mixture, with Ar/O
2The container that distilled water is housed of the water-bath heating that the gaseous mixture feeding is 30 ℃ realizes that mixed gas flow is 1.5 liters/minute), Ar/O is done in feeding in back 1.4 hours
2Gaseous mixture after sintering finishes, is continuing to feed dried Ar/O
2Lower the temperature under the condition of gaseous mixture, when temperature drops to 500 ℃, change purity oxygen into, and be incubated 2 hours, with the stove cooling, obtain SrZrO then
3The ybco film that mixes.
The XRD result of this film in the drawings except that the diffraction maximum of substrate, only shows (00L) diffraction maximum of YBCO as shown in Figure 1, and doping SrZrO is described
3Do not influence the one-tenth phase of film, the while film also has good face and is orientated outward.
Embodiment 2
1) with 0.005mol acetic acid yttrium, 0.01mol barium acetate and 0.015mol Schweinfurt green are dissolved in the deionized water, after adding the complexing of 5.5ml trifluoroacetic acid again, obtain blue transparent colloidal liquid, obtain the YBCO precursor aqueous solution of 1.5mol/L with the methyl alcohol dilution in 50 ℃ of following evaporation and concentration;
Strontium acetate and acetylacetone,2,4-pentanedione zirconium were dissolved in the propionic acid in 1: 1 in molar ratio, obtain the SrZrO that the metal ion total concentration is 0.5mol/L
3Precursor aqueous solution;
Press SrZrO
3: the molar percentage of YBCO is 6% with SrZrO
3Precursor aqueous solution mixes with the YBCO precursor aqueous solution, obtains SrZrO
3The YBCO precursor aqueous solution that mixes;
2) adopt spin coating method with SrZrO
3The YBCO precursor aqueous solution that mixes is coated to and obtains wet film in the substrate, and the revolution of filming is 4000 rev/mins, films 2 minutes time;
3) wet film (is fed oxygen that the container that distilled water is housed of 30 ℃ water-bath heating realizes at the wet oxygen below 400 ℃, oxygen flow is 0.6 liter/minute) in low temperature presintering obtain forerunner's amorphous film, wherein, the programming rate of room temperature to 190 ℃ is 135 ℃/hour, programming rate between 190 ℃-250 ℃ is 6 ℃/hour, programming rate between 250 ℃-300 ℃ is 30 ℃/hour, and the programming rate between 300 ℃-400 ℃ is 300 ℃/hour;
4) forerunner's amorphous film is incubated 1.5 hours down at 800 ℃, wherein, the wet Ar/O of feeding in preceding 1 hour
2(oxygen content is 1000ppm to gaseous mixture, with Ar/O
2The container that distilled water is housed of the water-bath heating that the gaseous mixture feeding is 40 ℃ realizes that mixed gas flow is 1.0 liters/minute), Ar/O is done in feeding in back 0.5 hour
2Gaseous mixture after sintering finishes, is continuing to feed dried Ar/O
2Lower the temperature under the condition of gaseous mixture, when temperature drops to 500 ℃, change purity oxygen into, and be incubated 4 hours, with the stove cooling, obtain SrZrO then
3The ybco film that mixes.
Under 77K, the J of this film
cWith the curve of changes of magnetic field as shown in Figure 2, along with applying a magnetic field increases, the J of doped samples
cBe higher than unadulterated sample gradually, under 10kOs, the J of doped samples
cValue is 2.5 times of unadulterated ybco film.(102) face Φ scintigram of this film has shown four very strong diffraction maximums as shown in Figure 3 on the figure, and the average value of a half width (FWHM) at peak only is 1.1 °, and this explanation film has texture in the very strong face.
Embodiment 3
1) with 0.01mol acetic acid yttrium, 0.02mol barium acetate and 0.03mol Schweinfurt green are dissolved in the deionized water, after adding the trifluoroacetic acid complexing of 11ml again, obtain blue transparent colloidal liquid, obtain the YBCO precursor aqueous solution of 2mol/L with the methyl alcohol dilution in 50 ℃ of following evaporation and concentration;
Strontium acetate and acetylacetone,2,4-pentanedione zirconium were dissolved in the propionic acid in 1: 1 in molar ratio, obtain the SrZrO that the metal ion total concentration is 0.1mol/L
3Precursor aqueous solution;
Press SrZrO
3: the molar percentage of YBCO is 10% with SrZrO
3Precursor aqueous solution mixes with the YBCO precursor aqueous solution, obtains SrZrO
3The YBCO precursor aqueous solution that mixes;
2) adopt spin coating method with SrZrO
3The YBCO precursor aqueous solution that mixes is coated to and obtains wet film in the substrate, and the revolution of filming is 6000 rev/mins, and the time of filming is 1 minute;
3) wet film (is fed oxygen that the container that distilled water is housed of 20 ℃ water-bath heating realizes at the wet oxygen below 400 ℃, oxygen flow is 1.0 liters/minute) in low temperature presintering obtain forerunner's amorphous film, wherein, the programming rate of room temperature to 190 ℃ is 135 ℃/hour, programming rate between 190 ℃-250 ℃ is 10 ℃/hour, programming rate between 250 ℃-300 ℃ is 30 ℃/hour, and the programming rate between 300 ℃-400 ℃ is 300 ℃/hour;
4) forerunner's amorphous film is incubated 1 hour down at 850 ℃, wherein, the wet Ar/O of feeding in preceding 0.67 hour
2(oxygen content is 10000ppm to gaseous mixture, with Ar/O
2The container that distilled water is housed of the water-bath heating that the gaseous mixture feeding is 50 ℃ realizes that mixed gas flow is 0.2 liter/minute), Ar/O is done in feeding in back 0.33 hour
2Gaseous mixture after sintering finishes, is continuing to feed dried Ar/O
2Lower the temperature under the condition of gaseous mixture, when temperature drops to 500 ℃, change purity oxygen into, and be incubated 3 hours, with the stove cooling, obtain SrZrO then
3The ybco film that mixes.
The critical transition temperature T of this film
cAs shown in Figure 4, its initial critical transition temperature is 90K.
Embodiment 4
1) with 0.005mol acetic acid yttrium, 0.01mol barium acetate and 0.015mol Schweinfurt green are dissolved in the deionized water, after adding the trifluoroacetic acid complexing of 5.5ml again, obtain blue transparent colloidal liquid, obtain the YBCO precursor aqueous solution of 1.3mol/L with the methyl alcohol dilution in 50 ℃ of following evaporation and concentration;
Strontium acetate and acetylacetone,2,4-pentanedione zirconium were dissolved in the propionic acid in 1: 1 in molar ratio, obtain the SrZrO that the metal ion total concentration is 1.0mol/L
3Precursor aqueous solution;
Press SrZrO
3: the molar percentage of YBCO is 4% with SrZrO
3Precursor aqueous solution mixes with the YBCO precursor aqueous solution, obtains SrZrO
3The YBCO precursor aqueous solution that mixes;
2) adopt dip-coating method with SrZrO
3The YBCO precursor aqueous solution that mixes is coated to and obtains wet film in the substrate, and pull rate is 5 mm/min;
3) wet film (is fed oxygen that the container that distilled water is housed of 30 ℃ water-bath heating realizes at oxygen wet below 400 ℃, oxygen flow is 0.5 liter/minute) in low temperature presintering obtain forerunner's amorphous film, wherein, the programming rate of room temperature to 190 ℃ is 135 ℃/hour, programming rate between 190 ℃-250 ℃ is 5 ℃/hour, programming rate between 250 ℃-300 ℃ is 30 ℃/hour, and the programming rate between 300 ℃-400 ℃ is 300 ℃/hour;
4) forerunner's amorphous film is incubated 3 hours down at 780 ℃, wherein, the wet Ar/O of feeding in preceding 2 hours
2(oxygen content is 1000ppm to gaseous mixture, with Ar/O
2The container that distilled water is housed of the water-bath heating that the gaseous mixture feeding is 40 ℃ realizes that mixed gas flow is 1.0 liters/minute), Ar/O is done in feeding in back 1 hour
2Gaseous mixture after sintering finishes, is continuing to feed dried Ar/O
2Lower the temperature under the condition of gaseous mixture, when temperature drops to 500 ℃, change purity oxygen into, and be incubated 2 hours, with the stove cooling, obtain SrZrO then
3The ybco film that mixes.
Under 65K, the J of this film
cWith the curve of changes of magnetic field as shown in Figure 5, along with applying a magnetic field increases, the J of doped samples
cBe higher than unadulterated sample gradually, under the magnetic field of 10kOs, the J of doped samples
cValue is 1.7 times of unadulterated ybco film,
Embodiment 5
1) with 0.005mol acetic acid yttrium, 0.01mol barium acetate and 0.015mol Schweinfurt green are dissolved in the deionized water, after adding the trifluoroacetic acid complexing of 5.5ml again, obtain blue transparent colloidal liquid, obtain the YBCO precursor aqueous solution of 1.8mol/L with the methyl alcohol dilution in 50 ℃ of following evaporation and concentration;
Strontium acetate and acetylacetone,2,4-pentanedione zirconium were dissolved in the propionic acid in 1: 1 in molar ratio, obtain the SrZrO that the metal ion total concentration is 0.4mol/L
3Precursor aqueous solution;
Press SrZrO
3: the molar percentage of YBCO is 8% with SrZrO
3Precursor aqueous solution mixes with the YBCO precursor aqueous solution, obtains SrZrO
3The YBCO precursor aqueous solution that mixes;
2) adopt dip-coating method with SrZrO
3The YBCO precursor aqueous solution that mixes is coated to and obtains wet film in the substrate, and pull rate is 50 mm/min;
3) wet film (is fed oxygen that the container that distilled water is housed of 30 ℃ water-bath heating realizes at wet oxygen below 400 ℃, oxygen flow is 0.5 liter/minute) low temperature presintering obtains forerunner's amorphous film in the gas, wherein, the programming rate of room temperature to 190 ℃ is 135 ℃/hour, programming rate between 190 ℃-250 ℃ is 5 ℃/hour, programming rate between 250 ℃-300 ℃ is 30 ℃/hour, and the programming rate between 300 ℃-400 ℃ is 300 ℃/hour;
4) forerunner's amorphous film is incubated 2.4 hours down at 820 ℃, wherein, the wet Ar/O of feeding in preceding 1.6 hours
2(oxygen content is 100ppm to gaseous mixture, with Ar/O
2The container that distilled water is housed of the water-bath heating that the gaseous mixture feeding is 30 ℃ realizes that mixed gas flow is 1.3 liters/minute), Ar/O is done in feeding in back 0.8 hour
2Gaseous mixture after sintering finishes, is continuing to feed dried Ar/O
2Lower the temperature under the condition of gaseous mixture, when temperature drops to 500 ℃, change purity oxygen into, and be incubated 2 hours, with the stove cooling, obtain SrZrO then
3The ybco film that mixes.
Under 50K, the J of this film
cWith the curve of changes of magnetic field as shown in Figure 6, along with applying a magnetic field increases, the J of doped samples
cBe higher than unadulterated sample gradually, when adding,, magnetic field was 10kOs, the J of doped samples
cValue is 1.6 times of unadulterated ybco film; And under the magnetic field of 40kOs, the J of doped samples
cValue is 3.3 times of unadulterated ybco film.
Claims (6)
1. SrZrO
3The ybco film that mixes is characterized in that described film is by SrZrO
3Form with YBCO, wherein, SrZrO
3Molar percentage be 1-15%, the molar percentage of YBCO is 85-99%.
2. a kind of SrZrO according to claim 1
3The preparation method of the ybco film that mixes is characterized in that, may further comprise the steps:
1) SrZrO
3The preparation of the YBCO precursor aqueous solution that mixes:
A, with the acetic acid yttrium, barium acetate and Schweinfurt green were dissolved in the deionized water in 1: 2: 3 in molar ratio, after adding is higher than the trifluoroacetic acid complexing of stoichiometric proportion 10% again, after 50 ℃ of following evaporation and concentration obtain blue transparent colloidal liquid, with the methyl alcohol dilution, obtain the YBCO precursor aqueous solution of 1.0-2.0mol/L;
B, strontium acetate and acetylacetone,2,4-pentanedione zirconium were dissolved in the propionic acid in 1: 1 in molar ratio, obtain the SrZrO that the metal ion total concentration is 0.1-1.0mol/L
3Precursor aqueous solution;
C, with SrZrO
3Precursor aqueous solution mixes with the YBCO precursor aqueous solution, obtains SrZrO
3The YBCO precursor aqueous solution that mixes, wherein, SrZrO
3Molar percentage be 1-15%, the molar percentage of YBCO is 85-99%;
2) coating of film: with SrZrO
3The mode of the YBCO precursor aqueous solution that mixes by spin coating or dip-coating is coated to and obtains the gel wet film in the substrate;
3) low temperature presintering: the pre-burning in being lower than 400 ℃ wet oxygen of coated gel wet film is obtained forerunner's amorphous film, wherein, the programming rate of room temperature to 190 ℃ is 135 ℃/hour, programming rate between 190 ℃-250 ℃ is 5-10 ℃/hour, programming rate between 250 ℃-300 ℃ is 30 ℃/hour, and the programming rate between 300 ℃-400 ℃ is 300 ℃/hour;
4) high temperature sintering: in 750-850 ℃ of following sintering 1-4 hour, in the sintering process, feeding oxygen content in preceding 2/3 time period was the wet Ar/O of 100-10000ppm with forerunner's amorphous film
2Gaseous mixture, feeding oxygen content in 1/3 time period of back is the dried Ar/O of 100-10000ppm
2It is the dried Ar/O of 100-10000ppm continuing to feed oxygen content that gaseous mixture, sintering finish the back
2Lower the temperature under the gaseous mixture condition, when temperature drops to 500 ℃, change purity oxygen into, and be incubated 2-4 hour, obtain SrZrO with the stove cooling
3The ybco film that mixes.
3. method according to claim 2 is characterized in that, when step 2) in adopt the spin coating mode with SrZrO
3When the YBCO precursor aqueous solution that mixes was coated in the substrate, the revolution of filming was 3000-6000 rev/min, and the time of filming is 1-3 minute.
4. method according to claim 2 is characterized in that, when step 2) in adopt the mode of dip-coating with SrZrO
3When the YBCO precursor aqueous solution that mixes was coated in the substrate, the pull rate of filming was the 5-80 mm/min.
5. method according to claim 2 is characterized in that, the wet oxygen described in the step 3) is by realizing that bath temperature is 20-50 ℃ in the container that distilled water is housed that oxygen is fed water-bath heating, oxygen flow be the 0.2-1.0 liter/minute.
6. method according to claim 2 is characterized in that, the wet Ar/O described in the step 4)
2Gaseous mixture is by with Ar/O
2Gaseous mixture feeds realizes in the container that distilled water is housed of water-bath heating that bath temperature is 30-50 ℃, mixed gas flow be the 0.2-1.5 liter/minute.
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CN1905955A (en) * | 2004-01-16 | 2007-01-31 | 美国超导公司 | Oxide films with nanodot flux pinning centers |
CN1719553A (en) * | 2005-05-20 | 2006-01-11 | 清华大学 | High-temp. superconducting film conductor and preparing method thereof |
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CN105272203A (en) * | 2015-10-14 | 2016-01-27 | 北京工业大学 | Preparation method of LAO (LaAlO3) doped composite YBCO film |
CN105272203B (en) * | 2015-10-14 | 2017-07-14 | 北京工业大学 | A kind of LaAlO3The preparation method of the composite Y BCO films of doping |
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