CN103913883A - Liquid crystal display panel and thin film transistor substrate - Google Patents
Liquid crystal display panel and thin film transistor substrate Download PDFInfo
- Publication number
- CN103913883A CN103913883A CN201310158211.3A CN201310158211A CN103913883A CN 103913883 A CN103913883 A CN 103913883A CN 201310158211 A CN201310158211 A CN 201310158211A CN 103913883 A CN103913883 A CN 103913883A
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- substrate
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- display panels
- film transistor
- thin film
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- 239000000758 substrate Substances 0.000 title claims abstract description 86
- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 29
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims description 23
- 238000009413 insulation Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000000926 separation method Methods 0.000 description 14
- 239000012212 insulator Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
Abstract
The invention provides a liquid crystal display panel and a thin film transistor substrate. The liquid crystal display panel comprises a first substrate, a second substrate and a liquid crystal layer, wherein the first substrate comprises a first substrate, a thin film transistor arranged on the first substrate, a passivation layer covering the thin film transistor, a pixel electrode electrically connected with the thin film transistor and a common electrode layer arranged in an insulating mode with the pixel electrode, the common electrode layer and the pixel electrode are used for generating a parallel electric field to drive liquid crystal molecules of the liquid crystal layer to rotate in a plane, and the passivation layer comprises a color filter layer. The liquid crystal display panel has high aperture ratio.
Description
Technical field
The present invention relates to a kind of display panels and thin film transistor base plate.
Background technology
Display panels generally includes thin film transistor base plate, and the colored filter substrate that is oppositely arranged of thin film transistor base plate and be sandwiched in the liquid crystal layer between two substrates.Normally, on thin film transistor base plate, be provided with transparency conducting layer (as pixel electrode layer) and lighttight thin film transistor (TFT) and driver circuit, on colored filter substrate, be provided with chromatic filter layer and black matrix, wherein, this chromatic filter layer need to be to should transparency conducting layer setting, and black matrix needs corresponding to by this thin film transistor (TFT) and driver circuit setting.But, due to thin film transistor base plate and colored filter substrate respectively independent making be combined by frame is cementing again, in the time that thin film transistor base plate and colored filter substrate are incorporated into one, between chromatic filter layer and thin film transistor (TFT) and driver circuit, easily there is contraposition deviation, thereby may cause the aperture opening ratio of display panels or display effect to reduce.
Summary of the invention
In view of this, be necessary the display panels that provides a kind of aperture opening ratio higher.
A kind of display panels, it comprises first substrate, second substrate and folder liquid crystal layer, the pixel electrode that this first substrate comprises the first substrate, be arranged at this first suprabasil thin film transistor (TFT), cover the passivation layer of this thin film transistor (TFT), be electrically connected with this thin film transistor (TFT) and the common electrode layer arranging with this pixel electrode insulation, this common electrode layer and this pixel electrode drive the liquid crystal molecule of liquid crystal layer planar to rotate for generation of parallel electric field, and this passivation layer comprises chromatic filter layer.
A kind of display panels, it comprises first substrate, and the second substrate that this first substrate is oppositely arranged and be sandwiched in this first substrate and this second substrate between liquid crystal layer, this first substrate comprises the first substrate, be arranged at this first suprabasil thin film transistor (TFT), cover the passivation layer of this thin film transistor (TFT), the pixel electrode being electrically connected with this thin film transistor (TFT), this passivation layer comprises chromatic filter layer, this second substrate comprises the second substrate and is arranged at this second suprabasil black matrix, this black matrix and this chromatic filter layer form the colored filter of this display panels.
Compared with prior art, in display panels of the present invention, chromatic filter layer and pixel electrode be the easier contraposition on different substrate compared to chromatic filter layer and pixel electrode on same substrate, and then can improve the problem of the chromatic filter layer of prior art and the contraposition deviation of pixel electrode, improve aperture opening ratio.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of display panels the first embodiment of the present invention.
Fig. 2 is the diagrammatic cross-section of display panels the second embodiment of the present invention.
Main element symbol description
Display panels 10,220
First substrate 11
Second substrate 12,22
Liquid crystal layer 13
Liquid crystal molecule 131
Sept 132
The first substrate 110
Thin film transistor (TFT) 111
Passivation layer 112,212
Pixel electrode 113
Common electrode layer 114
Public electrode wire 115
Insulation course 116
Conductive part 119,219
The second substrate 120
Black matrix 121, BM
Conductive layer 122
Grid 1110
Source electrode 1111
Drain electrode 1112,2112
Channel layer 1113
Light shield layer 141
The first separation layer group 142
Gate insulator 143
The second separation layer group 144
Via 151,152,153,154
Red filter unit R
Green filter unit G
Blue filter unit B
The first opening 117
The second opening 118
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1, Fig. 1 is the diagrammatic cross-section (wherein said section can be to comprise stepped section) of display panels 10 first embodiments of the present invention.This display panels 10 comprises first substrate 11, and the second substrate 12 that is oppositely arranged of this first substrate 11 and be sandwiched in the liquid crystal layer 13 between this first substrate 11 and this second substrate 12, pixel electrode 113 that this first substrate 11 comprises the first substrate 110, be arranged at thin film transistor (TFT) 111 in this first substrate 110, cover the passivation layer 112 of this thin film transistor (TFT) 111, be electrically connected with this thin film transistor (TFT) 111, the common electrode layer 114 arranging with these pixel electrode 113 insulation.In present embodiment, this passivation layer 112 is also as chromatic filter layer, and this chromatic filter layer is as a part for the colored filter of this display panels 10.In present embodiment, this second substrate 12 also comprises black matrix 121, this black matrix 121 and the common colored filter that forms this display panels 10 of this passivation layer 112.
Wherein, this display panels 10 can be plane electric fields switch type (In-Plane Switching, IPS) display panels or fringe field switch type (Fringing Field Switching, FFS) display panels, this common electrode layer 114 is planar rotated for generation of the liquid crystal molecule 131 of the electric field driven liquid crystal layer 13 that is basically parallel to this first substrate 11 with this pixel electrode 113.
Further, this second substrate 12 also comprises the second substrate 120 and conductive layer 122, and this black matrix 121 is arranged at contiguous these liquid crystal layer 13 1 sides of this second substrate 120, and this conductive layer 122 is arranged at this second substrate 120 away from these liquid crystal layer 13 1 sides.This conductive layer 122 also forms capacitive touch-sensing structure with these common electrode layer 114 mutually insulateds, thereby the dielectric layer of this conductive layer 122 also and between this common electrode layer 114 at least comprises this liquid crystal layer 13, this second substrate 120 and this black matrix 121.
Particularly, this common electrode layer 114 is arranged on this passivation layer 112, this first substrate 11 also comprises public electrode wire 115 and insulation course 116, this public electrode wire 115 is arranged in this common electrode layer 114, this insulation course 116 is covered on this common electrode layer 114 and this public electrode wire 115, and this pixel electrode 113 is arranged on this insulation course 116.This passivation layer 112 comprises the via 151 that runs through this passivation layer 112, this first substrate 11 also comprises the conductive part 119 that is arranged on this passivation layer 112 and connects this thin film transistor (TFT) 111 via this via 151, this conductive part 119 arranges with these common electrode layer 114 intervals, this insulation course 116 comprises the via 152 that runs through this insulation course 116, and this pixel electrode 113 is electrically connected these conductive parts 119 to be electrically connected with this thin film transistor (TFT) 111 via this via 152.
Wherein, this common electrode layer 114 can be transparency conducting layer with the material of this pixel electrode 113, and these public electrode wire 115 materials can be lighttight metal, and the material of this conductive part 119 is also lighttight metal.Preferably, this conductive part 119 is identical with these public electrode wire 115 materials, and this conductive part 119 forms in mask processing procedure with this public electrode wire 115.Specifically, in the manufacture process of this first substrate 11, forming after this common electrode layer 114, deposition one metal level for the manufacture of this public electrode wire 115 and this conductive part 119 and photoresist layer, this photoresist layer exposure of mask alignment with specific pattern is provided again, again the photoresist layer after exposure is developed, thereby form a predetermined photoresist pattern.Further this metal level is carried out to etching, and then form this public electrode wire 115 and this conductive part 119 with predetermined pattern, then remove this remaining photoresist layer, can complete the making of this public electrode wire 115 and this conductive part 119.
In addition, this thin film transistor (TFT) 111 can be low-temperature polysilicon film transistor, and it comprises grid 1110, source electrode 1111, drain electrode 1112 and channel layer 1113.This first substrate 110 is transparent substrates, as substrate of glass.This second substrate 12 can be also transparency carrier.This first substrate 11 also comprises light shield layer 141, the first separation layer group 142, gate insulator 143 and the second separation layer group 144.
Particularly, this light shield layer 141 is arranged in this first substrate 110.This first separation layer group 142 is covered on this light shield layer 141, and it can comprise three layers of separation layer, and the material of these three layers of separation layers can be sequentially monox, silicon nitride and monox from bottom to top.This channel layer 1113 is arranged in this first separation layer group 142, and it comprises light doping section and heavily doped region.This gate insulator 143 covers on this channel layer 1113, and its material can be monox.This grid 1110 is arranged on this gate insulator 143, and in present embodiment, this thin film transistor (TFT) 111 can be double gated thin film transistor (TFT).This second separation layer group 144 is arranged on this grid 1110, and it can comprise silicon nitride and monox from bottom to top.This second separation layer group 144 and this gate insulator 143 are also provided with the via 153 and the via 154 that run through this second separation layer group 144 and this gate insulator 143.This source electrode 1111 and this drain electrode 1112 are arranged in this second separation layer group 144, and this source electrode 1111 is connected to one end of this channel layer 1113 by this via 153, and this drain electrode 1112 is connected to the other end of this channel layer 1113 by this via 154.Be appreciated that, the source drive line (not shown) that this source electrode 1111 is also connected in this second separation layer group 144 and arranges with layer with this source electrode 1111, the grid drive wire (not shown) that this grid 1110 is also connected on this gate insulator 143 and arranges with layer with this grid 1110.
This passivation layer 112, i.e. this chromatic filter layer, is covered in this second separation layer group 144, this source electrode 1111 and this drain electrode 1112, and this position of running through the via 153 of this chromatic filter layer can be corresponding with this via 152.Wherein, this chromatic filter layer can comprise the red filter unit R at interval, green filter unit G and blue filter unit B.
In addition, as shown in Figure 1, in this pixel electrode 113, be also formed with multiple the first openings 117, multiple the second openings 118 of this common electrode layer 114 corresponding formation, the plurality of the first opening 117 and multiple the second opening 118 can be crisscross arranged.Certainly,, in the time that this display panels 10 is fringe field switch type liquid crystal display panel, this common electrode layer 114 also can not arrange in the plurality of the second opening 118 or this pixel electrode 113 the first opening 117 is not set.Again, this display panels 10 can also comprise the sept 132 that is arranged in this liquid crystal layer 13, and wherein the position of this sept 132 can be corresponding with public electrode wire 115.
Compared with prior art, in display panels 10 of the present invention, chromatic filter layer and pixel electrode 113 be the easier contraposition on different substrate compared to chromatic filter layer and pixel electrode on same substrate, and then can improve the problem of the chromatic filter layer of prior art and the contraposition deviation of pixel electrode 113, improve aperture opening ratio.
Refer to Fig. 2, Fig. 2 is the diagrammatic cross-section of display panels 20 second embodiments of the present invention.The key distinction of the display panels 20 of this second embodiment and the display panels 10 of the first embodiment is: second substrate 22 can not comprise black matrix, the passivation layer 212 of first substrate 21 is as the colored filter of this display panels 20, this passivation layer 212 comprises black matrix B M and chromatic filter layer, wherein, this chromatic filter layer comprises sequentially spaced red filter unit R, green filter unit G and blue filter unit B, this black matrix B M is arranged at this redness filter unit R, between adjacent two photoresists of green filter unit G and blue filter unit B.In addition, preferably, conductive part 219 is lighttight metal, is also covered in the position at drain electrode 2112 places, and near the light this drain electrode 2112 is covered.
In the display panels 20 of this second embodiment, this black matrix B M and thin film transistor (TFT) are all arranged at second substrate 12 and easily contraposition, and then can improve the problem of the contraposition deviation of black matrix B M and thin film transistor (TFT), improve aperture opening ratio.
Claims (15)
1. a display panels, it comprises first substrate, and the second substrate that this first substrate is oppositely arranged and be sandwiched in this first substrate and this second substrate between liquid crystal layer, this first substrate comprises the first substrate, be arranged at this first suprabasil thin film transistor (TFT), cover the passivation layer of this thin film transistor (TFT), the pixel electrode being electrically connected with this thin film transistor (TFT), and the common electrode layer arranging with the insulation of this pixel electrode, it is characterized in that: this common electrode layer and this pixel electrode planar rotate for generation of the liquid crystal molecule of the electric field driven liquid crystal layer that is parallel to this first substrate, this passivation layer comprises chromatic filter layer.
2. display panels as claimed in claim 1, it is characterized in that: this second substrate comprises the second substrate and is arranged at this second suprabasil conductive layer, this conductive layer also forms capacitive touch-sensing structure with this common electrode layer mutually insulated, and the dielectric layer of this conductive layer also and between this common electrode layer comprises this liquid crystal layer.
3. display panels as claimed in claim 2, is characterized in that: this conductive layer is arranged at this second substrate away from this liquid crystal layer one side.
4. the display panels as described in claims 1 to 3 any one, it is characterized in that: this second substrate also comprises black matrix, this black matrix and this chromatic filter layer form the colored filter of this display panels, and this chromatic filter layer is as the passivation layer that covers this thin film transistor (TFT).
5. display panels as claimed in claim 4, is characterized in that: this black arranged in matrix is in contiguous this liquid crystal layer one side of this second substrate.
6. the display panels as described in claims 1 to 3 any one, it is characterized in that: this first substrate also comprises black matrix, this black matrix and this chromatic filter layer form the colored filter of this display panels, and this black matrix and this chromatic filter layer form this passivation layer.
7. display panels as claimed in claim 6, wherein, this chromatic filter layer comprises sequentially spaced red filter unit, green filter unit and blue filter unit, and this black arranged in matrix is between adjacent two photoresists of this redness filter unit, green filter unit and blue filter unit.
8. display panels as claimed in claim 1, is characterized in that: this common electrode layer is arranged on this passivation layer, and this first substrate also comprises public electrode wire, and this public electrode wire is arranged in this common electrode layer.
9. display panels as claimed in claim 8, is characterized in that: this first substrate also comprises insulation course, and this insulation course is covered in this common electrode layer and this public electrode is online, and this pixel electrode is arranged on this insulation course.
10. display panels as claimed in claim 9, it is characterized in that: this passivation layer comprises the first via that runs through this passivation layer, this first substrate also comprises the conductive part that is arranged on this passivation layer and connects the drain electrode of this thin film transistor (TFT) via this first via, this conductive part and this common electrode layer interval arrange, this insulation course comprises the second via that runs through this insulation course, and this pixel electrode is electrically connected this conductive part to be connected with the drain electrode of this thin film transistor (TFT) via this second via.
11. display panels as claimed in claim 10, is characterized in that: the material of this conductive part is metal.
12. display panels as claimed in claim 11, is characterized in that: this conductive part is identical with this public electrode wire material.
13. display panels as claimed in claim 11, is characterized in that: this conductive part forms in mask processing procedure with this public electrode wire.
14. display panels as claimed in claim 1, is characterized in that: this thin film transistor (TFT) is low-temperature polysilicon film transistor.
15. 1 kinds of display panels, it comprises first substrate, and the second substrate that this first substrate is oppositely arranged and be sandwiched in this first substrate and this second substrate between liquid crystal layer, this first substrate comprises the first substrate, be arranged at this first suprabasil thin film transistor (TFT), cover the passivation layer of this thin film transistor (TFT), the pixel electrode being electrically connected with this thin film transistor (TFT), it is characterized in that: this passivation layer comprises chromatic filter layer, this second substrate comprises the second substrate and is arranged at this second suprabasil black matrix, this black matrix and this chromatic filter layer form the colored filter of this display panels.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101150835A TWI584028B (en) | 2012-12-28 | 2012-12-28 | Liquid crystal display panel and thin film transistor substrate |
| TW101150835 | 2012-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103913883A true CN103913883A (en) | 2014-07-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310158211.3A Pending CN103913883A (en) | 2012-12-28 | 2013-05-02 | Liquid crystal display panel and thin film transistor substrate |
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| TW (1) | TWI584028B (en) |
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| CN104656325A (en) * | 2015-03-18 | 2015-05-27 | 深圳市华星光电技术有限公司 | COA (Color filter On Array) type liquid crystal panel and manufacturing method thereof |
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| CN104965331A (en) * | 2015-07-10 | 2015-10-07 | 深圳市华星光电技术有限公司 | Liquid crystal display device |
| CN107357078A (en) * | 2017-08-22 | 2017-11-17 | 深圳市华星光电技术有限公司 | Liquid crystal display |
| WO2020062452A1 (en) * | 2018-09-30 | 2020-04-02 | 惠科股份有限公司 | Display panel and display |
| CN111367116A (en) * | 2020-04-29 | 2020-07-03 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
| CN111627935A (en) * | 2020-06-09 | 2020-09-04 | 厦门天马微电子有限公司 | Display panel and display device |
| CN114217471A (en) * | 2018-12-05 | 2022-03-22 | 友达光电股份有限公司 | Display device |
| CN114296282A (en) * | 2022-01-06 | 2022-04-08 | 昆山龙腾光电股份有限公司 | Array substrate, manufacturing method and display panel |
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| KR101727108B1 (en) * | 2014-12-31 | 2017-04-17 | 엘지디스플레이 주식회사 | In cell touch liquid crystal display device and method for manufacturing the same |
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| CN114296282A (en) * | 2022-01-06 | 2022-04-08 | 昆山龙腾光电股份有限公司 | Array substrate, manufacturing method and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI584028B (en) | 2017-05-21 |
| TW201426105A (en) | 2014-07-01 |
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