CN1517767A - Wide visual angle liquid crystal display device and its manufacturing method - Google Patents
Wide visual angle liquid crystal display device and its manufacturing method Download PDFInfo
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- CN1517767A CN1517767A CNA031006299A CN03100629A CN1517767A CN 1517767 A CN1517767 A CN 1517767A CN A031006299 A CNA031006299 A CN A031006299A CN 03100629 A CN03100629 A CN 03100629A CN 1517767 A CN1517767 A CN 1517767A
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Abstract
A LCD device with wide-angle and its preparing process are disclosed. The color filter layer in said LCD device is arranged on substrate having film transistors, and the pixel electrodes and common electrodes are arranged on color filter layer. As there is no a thick color filter layer between LC layer and pixel and common electrodes, its drive voltage is lowered and charge residue is decreased.
Description
Technical field
(Liquid Crystal Display LCD) and manufacture method, relates in particular to a kind of wide viewing angle (Wide-Viewing Angle, WVA) LCD device and manufacture method thereof to the present invention relates to a kind of LCD device.
Background technology
Advantages such as LCD has that high image quality, volume are little, in light weight, low voltage drive, low consumpting power and applied range, therefore, be applied in medium and small portable television, mobile phone widely, shot with video-corder consumer electronics or computer products such as projector, notebook, console display and projection TV, and (Cathode Ray Tube CRT) becomes the main flow of display to replace cathode-ray tube (CRT) more gradually.Yet LCD still has problems such as angular field of view is narrow and on the high side, therefore how to increase its angular field of view, is to be badly in need of one of problem of improving at present.Existing now many wide-angle liquid crystal display schemes are suggested, and it comprises interplanar translative mode (In-Plane Switching, IPS) LCD and fringe field translative mode (Fringe Field Switching, FFS) LCD or the like.
In addition, chromatic filter layer is produced on (Color Filter onArray, technology COA) also are applied on many LCD widely, No. the 6031512nd, relevant references such as United States Patent (USP) on the thin film transistor (TFT) array.Yet, in existing method, the COA technology is used for above-mentioned wide-angle liquid crystal display, mostly be earlier pixel electrode (Pixel Electrode) and common electrode (Common Electrode) are completed after, just above pixel electrode and common electrode, form chromatic filter layer.It is described in detail as follows.
Figure 1 shows that the structural profile synoptic diagram of one of them pixel region of the wide-angle liquid crystal display of the existing a kind of COA of use technology.
With reference to Fig. 1, only draw the structure of one of them pixel region of this LCD device among the figure.The manufacture method of existing wide-angle liquid crystal display device is, one first substrate 10 at first is provided, wherein be formed with a thin film transistor (TFT) 11 on first substrate 10, it comprises a grid 12, gate insulator 14, a channel layer 16 and a source/drain 18a/18b.Then, on substrate 10, form a protective seam 20, cover thin film transistor (TFT).
Afterwards, in protective seam 20, form an opening (not shown), expose drain electrode 18b.Continue it; surface at protective seam 20 forms a pixel electrode 22 and a common electrode 24; and in opening, insert simultaneously the electrode material layers; to constitute a conductive structure 21; wherein pixel electrode 22 and common electrode 24 configurations interlaced with each other, and electrically connect by conductive structure 21 between pixel electrode 22 and the drain electrode 18b.In addition, common electrode 24 is serially connected with common electrode on other pixel region and has identical current potential.
Then, on protective seam 20, form a chromatic filter layer 26, cover pixel electrode 22 and common electrode 24.Then, on chromatic filter layer 26, form one first alignment film 28.
Then, provide one second substrate 34, and form one second alignment film 32 on a surface of second substrate 34.Afterwards, utilize a frame glue (not shown) second substrate 34 being fixed on the top of first substrate 10, and first alignment film 28 of second alignment film 32 on second substrate 34 on first substrate 10.Then, between second alignment film 32 of first alignment film 28 on first substrate 10 and second substrate 34, inject a liquid crystal layer 30, to constitute a LCD device.
Yet in the wide-angle liquid crystal display device of existing use COA, its chromatic filter layer is configured on pixel electrode and the common electrode.Owing between electrode (comprising pixel electrode and common electrode) and liquid crystal layer, dispose a thick layer of chromatic filter layer, therefore will make the driving voltage of LCD device improve many.In addition, prior art disposes the chromatic filter layer of a thick layer of organic material in the top of electrode (comprising pixel electrode and common electrode), can cause the residual situation of electric charge easily, and the picture quality of LCD is affected.
Summary of the invention
The object of the present invention is to provide a kind of wide-angle liquid crystal display device and manufacture method thereof, so that it has lower driving voltage.
Another object of the present invention provides a kind of wide-angle liquid crystal display device and manufacture method thereof, to improve the quality and the reliability of LCD.
The invention provides a kind of wide-angle liquid crystal display device, it comprises one first substrate, chromatic filter layer, a plurality of pixel electrode, a common electrode, first alignment film, second substrate, second alignment film and a liquid crystal layer.Wherein, dispose a plurality of thin film transistor (TFT)s, many on the surface of first substrate and scan distribution and many data wirings, and each thin film transistor (TFT) comprises a grid, a gate insulator, a channel layer and a source/drain.And chromatic filter layer is configured on first substrate, covers thin film transistor (TFT), scans distribution and data wiring.Pixel electrode is configured on the partial colour filter layer, and each pixel electrode electrically connects by the conductive structure that is configured in the chromatic filter layer with the drain electrode of corresponding thin film transistor (TFT).And common electrode also is configured on the partial colour filter layer, wherein common electrode and pixel electrode configuration interlaced with each other, and the common electrode on each pixel region all is serially connected and has identical current potential.In addition, common electrode of the present invention can also be configured on the chromatic filter layer of data wiring top, to increase the aperture opening ratio of LCD.And first alignment film is configured on the chromatic filter layer, covers pixel electrode and common electrode.In addition, second substrate is fixed on the top of first substrate.Second alignment film is configured on the surface of second substrate, and first alignment film of second alignment film on first substrate.Liquid crystal layer then is to be configured between first alignment film and second alignment film, to constitute a LCD device.In LCD device of the present invention, optionally on the surface of chromatic filter layer, dispose a flatness layer.
The invention provides a kind of wide-angle liquid crystal display device, it comprises one first substrate, chromatic filter layer, a plurality of pixel electrode, a dielectric layer, a common electrode, first alignment film, second substrate, second alignment film and a liquid crystal layer.Wherein, dispose a plurality of thin film transistor (TFT)s, many on the surface of first substrate and scan distribution and many data wirings, and each thin film transistor (TFT) comprises a grid, a gate insulator, a channel layer and a source/drain.And chromatic filter layer is configured on first substrate, covers thin film transistor (TFT), scans distribution and data wiring.Pixel electrode is configured on the partial colour filter layer, and each pixel electrode electrically connects by the conductive structure that is configured in the chromatic filter layer with the drain electrode of corresponding thin film transistor (TFT).Dielectric layer then is comprehensive being configured on the chromatic filter layer, covers pixel electrode.In addition, common electrode is configured on the part dielectric layer and is interconnected with pixel electrode, and the common electrode on each pixel region all is serially connected and has identical current potential.In addition, common electrode of the present invention can also be configured on the chromatic filter layer of data wiring top, to increase the aperture opening ratio of LCD.Wherein, pixel electrode, dielectric layer and common electrode constitute a plurality of pixel storage capacitor device structures.And first alignment film is configured on the dielectric layer, covers common electrode.In addition, second substrate is fixed on the top of first substrate.And second alignment film is configured on the surface of second substrate, and first alignment film of second alignment film on first substrate.Liquid crystal layer then is to be configured between first alignment film and second alignment film, to constitute a LCD device.In LCD device of the present invention, optionally on the surface of chromatic filter layer, dispose a flatness layer.
The invention provides a kind of manufacture method of wide-angle liquid crystal display device, the method at first provides one first substrate, wherein be formed with a plurality of thin film transistor (TFT)s, many on first substrate surface and scanned distribution and many data wirings, and each thin film transistor (TFT) comprises a grid, a gate insulator, a channel layer and a source/drain.Then, on first substrate, form a chromatic filter layer, cover thin film transistor (TFT), scan distribution and data wiring.In the present invention, optionally on the surface of chromatic filter layer, form a flatness layer.Then, form a plurality of openings in chromatic filter layer, each opening exposes the drain electrode of corresponding thin film transistor (TFT).Afterwards, on chromatic filter layer, form a plurality of pixel electrodes and a common electrode, and form conductive structure at opening part simultaneously, wherein common electrode and pixel electrode configuration interlaced with each other, and each pixel electrode electrically connects by this conductive structure with the drain electrode of corresponding thin film transistor (TFT), and the common electrode on each pixel region all is serially connected and has identical current potential.It should be noted that common electrode of the present invention can also be formed on the chromatic filter layer of data wiring top, to increase the aperture opening ratio of LCD.Afterwards, on chromatic filter layer, form one first alignment film, cover pixel electrode and common electrode.Then, provide one second substrate, and on a surface of second substrate, form one second alignment film.Then, second substrate is fixed on the top of first substrate, and makes first alignment film of second alignment film on first substrate on second substrate.Afterwards, between second alignment film of first alignment film on first substrate and second substrate, inject liquid crystal layer, to constitute a LCD device.
The invention provides a kind of manufacture method of wide-angle liquid crystal display device, the method at first provides one first substrate, wherein be formed with a plurality of thin film transistor (TFT)s, many on first substrate surface and scanned distribution and many data wirings, and each thin film transistor (TFT) comprises a grid, a gate insulator, a channel layer and a source/drain.Then, on first substrate, form a chromatic filter layer, cover thin film transistor (TFT), scan distribution and data wiring.In the present invention, optionally on the surface of chromatic filter layer, form a flatness layer.Afterwards, form a plurality of openings in chromatic filter layer, each opening exposes the drain electrode of corresponding thin film transistor (TFT).Then, form a plurality of pixel electrodes on chromatic filter layer, and form conductive structure at opening part simultaneously, wherein each pixel electrode electrically connects by this conductive structure with the drain electrode of corresponding thin film transistor (TFT).Afterwards, on chromatic filter layer, form a dielectric layer, cover pixel electrode.Then, form a common electrode on dielectric layer, wherein formed common electrode and pixel electrode are interconnected, and the common electrode on each pixel region all is serially connected and has identical current potential.It should be noted that common electrode of the present invention can also be formed on the chromatic filter layer of data wiring top, to increase the aperture opening ratio of LCD.At this, pixel electrode, common electrode and be formed on pixel electrode and common electrode between dielectric layer just constitute a plurality of pixel storage capacitor device structures voluntarily.Afterwards, on dielectric layer, form one first alignment film, cover common electrode.Then, provide one second substrate, and on a surface of second substrate, form one second alignment film.Then, second substrate is fixed on the top of first substrate, and makes first alignment film of second alignment film on first substrate on second substrate.Afterwards, between second alignment film of first alignment film on first substrate and second substrate, inject liquid crystal layer, to constitute a LCD device.
Wide-angle liquid crystal display device of the present invention and manufacture method thereof, since its chromatic filter layer be configured in pixel electrode and common electrode under, in other words, be not formed with a thick layer of chromatic filter layer between liquid crystal layer and pixel electrode and the common electrode, therefore can effectively reduce the driving voltage of LCD.
Wide-angle liquid crystal display device of the present invention and manufacture method thereof owing to do not dispose the chromatic filter layer of organic material above pixel electrode and common electrode, therefore are not easy the situation that causes electric charge residual, and then promote the quality of LCD device.
Wide-angle liquid crystal display device of the present invention and manufacture method thereof because its pixel electrode can be formed on the top that scans distribution, therefore can improve the aperture opening ratio of LCD device.
Description of drawings
Fig. 1 is the structural profile synoptic diagram of one of them pixel region of existing a kind of wide-angle liquid crystal display that uses the COA technology;
Fig. 2 is the schematic top plan view that has the substrate of thin film transistor (TFT) in the wide-angle liquid crystal display according to a preferred embodiment of the present invention;
Fig. 3 is the structural profile synoptic diagram according to one of them pixel region of the IPS wide-angle liquid crystal display of the use COA technology of a preferred embodiment of the present invention;
Fig. 4 is the structural profile synoptic diagram according to one of them pixel region of the IPS wide-angle liquid crystal display of the use COA technology of a preferred embodiment of the present invention;
Fig. 5 is the structural profile synoptic diagram according to one of them pixel region of the FFS wide-angle liquid crystal display of the use COA technology of another preferred embodiment of the present invention;
Fig. 6 is the structural profile synoptic diagram according to one of them pixel region of the FFS wide-angle liquid crystal display of the use COA technology of another preferred embodiment of the present invention; And
Fig. 7 is the schematic top plan view that has the substrate of thin film transistor (TFT) in the wide-angle liquid crystal display according to another preferred embodiment of the present invention.
Symbol description among the figure
10,34,100,200: substrate
11,101: thin film transistor (TFT)
12,102: grid
14,104: gate insulator
16,106: channel layer
18a/18b, 108a/108b: source/drain
20: protective seam
21,118: conductive structure
22,110: pixel electrode
24,112: common electrode
26,109: chromatic filter layer
28,32,114,202: alignment film
30,116: liquid crystal layer
111: flatness layer
130: data wiring
140: scan distribution
150: dielectric layer
Embodiment
Following conjunction with figs. describes preferred embodiment of the present invention in detail.
First embodiment
Fig. 2 is for having the schematic top plan view of the substrate of thin film transistor (TFT) in the wide-angle liquid crystal display according to a preferred embodiment of the present invention; Fig. 3 is the structural profile synoptic diagram according to one of them pixel region of the IPS wide-angle liquid crystal display of the use COA technology of a preferred embodiment of the present invention.
As Fig. 2 and shown in Figure 3, the manufacturing process of wide-angle liquid crystal display device of the present invention is, one first substrate 100 at first is provided, and be formed with a plurality of thin film transistor (TFT)s 101 on first substrate 100, many scan distribution 140 and many data wirings 130.
Wherein, the method that forms thin film transistor (TFT) 101 and scan distribution 140 and data wiring 130 on first substrate 100 is, at first on the surface of first substrate 100, form grid 102 and be connected with grid 102 scan distribution 140.Afterwards, comprehensive gate insulator 104 of deposition on first substrate 100, cover grid 102 and scan distribution 140.Then, on the gate insulator above the grid 102 104, form channel layer 106.Then, on channel layer 106, form source/drain 108a/108b again, and on gate insulator 104, form the data wiring 130 that is connected with source electrode 108a simultaneously.
Continuation forms a chromatic filter layer 109 with reference to Fig. 2 and Fig. 3 on first substrate 100, cover thin film transistor (TFT) 101, scan distribution 140 and data wiring 130.Wherein, chromatic filter layer 109 is by a plurality of red colorized optical filtering blocks, the colored filter area piece of a plurality of green and the colored filter area piece of a plurality of blueness (R, G, B) is regularly arranged constitutes.In the present embodiment, the arrangement mode of R, G, B for example is mosaic type, triangle, stripe or four pixel RGGB layout types etc.And between R, G, the B as netted space (Space) on dispose a black matrix layer (BlackMatrix, BM).
Then, in chromatic filter layer 109, form a plurality of openings (not shown), expose the drain electrode 108b of thin film transistor (TFT) 101.Then, a plurality of pixel electrodes 110 and a common electrode 112 of on chromatic filter layer 109, forming, and in opening, insert the electrode material layers simultaneously, to constitute a plurality of conductive structures 118.Wherein, each pixel electrode 110 by conductive structure 118 and and the drain electrode 108b of corresponding thin film transistor (TFT) 101 electrically connect, and the common electrode 112 on each pixel region all is serially connected and has identical current potential, and the common electrode of all pixel regions is all linked together.And, pixel electrode 110 and common electrode 112 configurations interlaced with each other (as shown in Figure 2) in each pixel region.In addition, the method that forms pixel electrode 110, common electrode 112 and conductive structure 118 for example is a first electrode material layers of formation (not shown) comprehensive on chromatic filter layer 109 and fills up opening, afterwards, patterned electrodes material layers and form pixel electrode 110 and common electrode 112, and form conductive structure 118 simultaneously.And the material of pixel electrode 110 and common electrode 112 for example is metal or indium tin oxide (ITO).
Then, on chromatic filter layer 109, form one first alignment film 114, cover pixel electrode 110 and common electrode 112.Wherein, first alignment film 114 is used for making subsequent configuration liquid crystal molecule above it can arrange (orientation) with certain orientation.
Afterwards, as shown in Figure 3, provide one second substrate 200, and form one second alignment film 202 on a surface of second substrate 200.Then, utilize a frame glue (not shown) that second substrate 200 is fixed on the top of first substrate 100, and first alignment film 114 of second alignment film 202 on second substrate 200 on first substrate 100.Then, between second alignment film 202 of first alignment film 114 on first substrate 100 and second substrate 200, inject liquid crystal layer 116, to constitute a LCD device.
What is particularly worth mentioning is that, in the manufacturing process of the LCD device of present embodiment, after forming chromatic filter layer 109, optionally on the surface of chromatic filter layer 109, form a flatness layer 111 (as shown in Figure 4).Owing to form uneven surface between R, G, B color block and the black matrix layer of chromatic filter layer 109 easily, therefore formation flatness layer 111 has function with chromatic filter layer 109 planarizations on the surface of chromatic filter layer 109.
The LCD device of present embodiment comprises one first substrate 100, chromatic filter layer 109, a plurality of pixel electrode 110, common electrode 112, one first alignment film 114, one second substrate 200, second alignment film 202 and a liquid crystal layer 106.Wherein, dispose a plurality of thin film transistor (TFT)s 101, many on the surface of first substrate 100 and scan distribution 140 and many data wirings 130, and each thin film transistor (TFT) 101 comprises a grid 102, gate insulator 104, a channel layer 106 and a source/drain 108a/108b.And chromatic filter layer 109 is configured on first substrate 100, covers thin film transistor (TFT) 101, scans distribution 140 and data wiring 130.Pixel electrode 110 is configured on the partial colour filter layer 109, and common electrode 112 also is configured on the partial colour filter layer 109, and 110 configurations interlaced with each other of common electrode 112 pixel electrodes.Wherein, each pixel electrode 110 electrically connects with the drain electrode 108b of corresponding thin film transistor (TFT) 101 by being configured in the conductive structure 118 in the chromatic filter layer 109, and the common electrode 112 on each pixel region all is serially connected and has identical current potential.First alignment film 114 is configured on the chromatic filter layer 109, covers pixel electrode 110 and common electrode 112.In addition, second substrate 200 is fixed on the top of first substrate 100.And second alignment film 202 is configured on the surface of second substrate 200, and first alignment film 114 of second alignment film 202 on first substrate 100.Liquid crystal layer 106 then is between first alignment film 114 and second alignment film 202 on second substrate 200 that is configured on first substrate 100, to constitute a LCD device.In LCD device of the present invention, optionally on the surface of chromatic filter layer 109, form a flatness layer 111.
Since chromatic filter layer of the present invention 109 configurations be formed on pixel electrode 110 and common electrode 112 under, in other words, be not formed with a thick layer of chromatic filter layer 109 between liquid crystal layer 116 and pixel electrode 110 and the common electrode 112, therefore method of the present invention can effectively reduce the driving voltage of LCD device.And because pixel electrode 110 and common electrode 112 tops do not dispose the chromatic filter layer 109 of organic material, therefore method of the present invention can be avoided the residual situation of electric charge, and then promotes the quality of LCD.
It should be noted that in LCD device of the present invention common electrode 114 can also be configured on the chromatic filter layer 109 of data wiring 130 tops (as shown in Figure 7), to increase the aperture opening ratio of LCD.Because the thickness of chromatic filter layer 109 is enough thick, the top that therefore common electrode 114 is configured in data wiring 130 can't electrically impacting data distribution 130.Therefore, the present invention can be with part common electrode 114 design configurations on the chromatic filter layer above the data wiring 130 109, to increase the aperture opening ratio of LCD.
Second embodiment
Fig. 2 is for having the schematic top plan view of the substrate of thin film transistor (TFT) in the wide-angle liquid crystal display according to a preferred embodiment of the present invention; Fig. 5 is the diagrammatic cross-section according to a pixel region structure in the FFS LCD of the use COA technology of another preferred embodiment of the present invention.
As Fig. 2 and shown in Figure 5, the manufacturing process of wide-angle liquid crystal display device of the present invention is, one first substrate 100 at first is provided, and be formed with a plurality of thin film transistor (TFT)s 101 on first substrate 100, many scan distribution 140 and many data wirings 130.
Wherein, the method that forms thin film transistor (TFT) 101 and scan distribution 140 and data wiring 130 on first substrate 100 is, at first on the surface of first substrate 100, form grid 102 and be connected with grid 102 scan distribution 140.Afterwards, comprehensive gate insulator 104 of deposition on first substrate 100, cover grid 102 and scan distribution 140.Then, on the gate insulator above the grid 102 104, form channel layer 106.Then, on channel layer 106, form source/drain 108a/108b again, and on gate insulator 104, form the data wiring 130 that is connected with source electrode 108a simultaneously.
Afterwards,, on first substrate 100, form a chromatic filter layer 109, cover thin film transistor (TFT) 101 and scan distribution 140 and data wiring 130 as Fig. 2 and shown in Figure 5.Wherein, chromatic filter layer 109 is by a plurality of red colorized optical filtering blocks, the colored filter area piece of a plurality of green and the colored filter area piece of a plurality of blueness (R, G, B) is regularly arranged constitutes.In the present embodiment, the arrangement mode of R, G, B for example is mosaic type, triangle, stripe or four pixel RGGB layout types etc.And between R, G, the B as netted space, dispose a black matrix layer.
Then, in chromatic filter layer 109, form a plurality of openings (not shown), expose the drain electrode 108b of thin film transistor (TFT) 101.Then, the pixel electrode 110 that on chromatic filter layer 109, forms, and in opening, insert the electrode material layers simultaneously, to constitute a plurality of conductive structures 118.Wherein, each pixel electrode 110 by conductive structure 118 and and the drain electrode 108b of corresponding thin film transistor (TFT) 101 electrically connect.In addition, the method that forms pixel electrode 110 for example is a first electrode material layers of formation (not shown) comprehensive on chromatic filter layer 109 and fills up opening 118, afterwards, patterned electrodes material layers and form pixel electrode 110 and form conductive structure 118 simultaneously.At this, the material of pixel electrode 110 for example is metal or indium tin oxide (ITO).
Afterwards, on chromatic filter layer 109, form dielectric layer 150, cover pixel electrode 110.Then, on dielectric layer 150, form a common electrode 112.Wherein, the common electrode 112 on each pixel region all is serially connected and has identical current potential.And, pixel electrode 110 and common electrode 112 configurations interlaced with each other (as shown in Figure 2) in each pixel region.At this, the material of common electrode 112 for example is metal or indium tin oxide (ITO).And pixel electrode 110, common electrode 112 and be formed on pixel electrode 110 and common electrode 112 between dielectric layer 150 just constitute (self-formed) a plurality of pixel storage capacitor device structure voluntarily.
Then, on dielectric layer 150, form one first alignment film 114, cover common electrode 112, the first alignment films 114 and be used for making subsequent configuration liquid crystal molecule above it can arrange (orientation) with certain orientation.
Afterwards, as shown in Figure 5, provide one second substrate 200, and form one second alignment film 202 on a surface of second substrate 200.Then, utilize a frame glue (not shown) so that second substrate 200 is fixed on the top of first substrate 100, and make first alignment film 114 of second alignment film 202 on first substrate 100 on second substrate 200.Then, between second alignment film 202 of first alignment film 114 on first substrate 100 and second substrate 200, inject liquid crystal layer 116, to constitute a LCD device.
What is particularly worth mentioning is that, in the manufacturing process of the LCD device of present embodiment, after forming chromatic filter layer 109, optionally on the surface of chromatic filter layer 109, form a flatness layer 111 (as shown in Figure 6).Owing to form uneven surface between R, G, B color block and the black matrix layer of chromatic filter layer 109 easily, therefore formation flatness layer 111 has function with chromatic filter layer 109 planarizations on the surface of chromatic filter layer 109.
The LCD device of present embodiment comprises one first substrate 100, chromatic filter layer 109, a plurality of pixel electrode 110, dielectric layer 150, common electrode 112, one first alignment film 114, one second substrate 200, second alignment film 202 and a liquid crystal layer 116.Wherein, dispose a plurality of thin film transistor (TFT)s 101, many on the surface of first substrate 100 and scan distribution 140 and many data wirings 130, and each thin film transistor (TFT) 101 comprises a grid 102, gate insulator 104, a channel layer 106 and a source/drain 108a/108b.And chromatic filter layer 109 is configured on first substrate 100, covers thin film transistor (TFT) 101, scans distribution 140 and data wiring 130.Pixel electrode 110 is configured on the partial colour filter layer 109.Wherein, each pixel electrode 110 electrically connects with the drain electrode 108b of corresponding thin film transistor (TFT) 101 by being configured in the conductive structure 118 in the chromatic filter layer 109.150 of dielectric layers are comprehensive being configured on the chromatic filter layer 109, cover pixel electrode 110.And common electrode 112 is configured on the part dielectric layer 150, and common electrode 112 and pixel electrode 110 configurations interlaced with each other, and the common electrode on each pixel region 112 all is serially connected and has identical current potential.Wherein, pixel electrode 110, dielectric layer 150 and common electrode 112 constitute a plurality of pixel storage capacitor device structures.First alignment film 114 is configured on the dielectric layer 150, covers common electrode 112.In addition, second substrate 200 is fixed on the top of first substrate 100.And second alignment film 202 is configured on the surface of second substrate 200, and first alignment film 114 of second alignment film 202 on first substrate 100.116 of liquid crystal layers are between first alignment film 114 and second alignment film 202 on second substrate 200 that is configured on first substrate 100, to constitute a LCD device.In LCD device of the present invention, optionally on the surface of chromatic filter layer 109, form a flatness layer 111.
Since chromatic filter layer of the present invention 109 configurations be formed on pixel electrode 110 and common electrode 112 under, in other words, be not formed with a thick layer of chromatic filter layer 109 between liquid crystal layer 116 and pixel electrode 110 and the common electrode 112, therefore method of the present invention can effectively reduce the driving voltage of LCD device.And because pixel electrode 110 and common electrode 112 tops do not dispose the chromatic filter layer 109 of organic material, therefore method of the present invention can be avoided the residual situation of electric charge, and then promotes the quality of LCD.
It should be noted that in LCD device of the present invention common electrode 114 can also be configured on the chromatic filter layer 109 of data wiring 130 tops (as shown in Figure 7), to increase the aperture opening ratio of LCD.Because the thickness of chromatic filter layer 109 is enough thick, the top that therefore common electrode 114 is configured in data wiring 130 can't electrically impacting data distribution 130.Therefore, the present invention can be with part common electrode 114 design configurations on the chromatic filter layer above the data wiring 130 109, to increase the aperture opening ratio of LCD.
The above is preferred embodiment of the present invention, does not constitute the restriction to the scope of essence technology contents of the present invention.Essence technology contents of the present invention broadly is defined in the right of the present invention, any technology entity or method that other people finish, as defined identical with claims of the present invention, or its equivalence change, all will be regarded as being covered by in the scope of the present invention.
Claims (12)
1. wide-angle liquid crystal display device is characterized in that it comprises:
First substrate, a surface configuration of this first substrate have a plurality of thin film transistor (TFT)s, many to scan distribution and many data wirings;
Chromatic filter layer is configured on this first substrate, covers this thin film transistor (TFT), these scan distribution and these data wirings;
A plurality of pixel electrodes are configured on this chromatic filter layer of part;
Common electrode is configured on this chromatic filter layer of part, and wherein this common electrode and these pixel electrodes are interconnected;
First alignment film is configured on this chromatic filter layer, covers these pixel electrodes and this common electrode;
Second substrate is fixed on the top of this first substrate;
Second alignment film is configured on the surface of this second substrate, and this second alignment film this first alignment film on this first substrate; And
Liquid crystal layer is configured between this first alignment film and this second alignment film.
2. wide-angle liquid crystal display device as claimed in claim 1 is characterized in that, also disposes flatness layer on the surface of this chromatic filter layer.
3. wide-angle liquid crystal display device as claimed in claim 1, it is characterized in that, this chromatic filter layer is then arranged institute by a plurality of red colorized optical filtering blocks, the colored filter area piece of a plurality of green and the colored filter area slip gauge of a plurality of blueness and is constituted, and disposes black matrix layer between these red colorized optical filtering blocks, these green colored filter area pieces and these the blue colored filter area pieces.
4. wide-angle liquid crystal display device as claimed in claim 1 is characterized in that, this common electrode more comprises on this chromatic filter layer that is configured in these data wiring tops.
5. wide-angle liquid crystal display device as claimed in claim 1 is characterized in that, each these thin film transistor (TFT) comprises:
Grid is configured on this surface of this first substrate of part, and these scan the distribution connection this grid and corresponding one of them;
Gate insulator is configured on this first substrate, and covers this grid;
Channel layer is configured on this gate insulator of this grid top; And
Source/drain is configured on this channel layer, wherein this source electrode and one of them corresponding these data wirings connection.
6. wide-angle liquid crystal display device as claimed in claim 5 is characterized in that, more comprises a conductive structure, is configured in this chromatic filter layer, uses so that should drain electrode and one of them corresponding these pixel electrodes electric connection.
7. the manufacture method of a wide-angle liquid crystal display device is characterized in that, this method comprises:
One first substrate is provided, wherein has been formed with a plurality of thin film transistor (TFT)s, many on this first substrate surface and has scanned distribution and many data wirings;
On this first substrate, form chromatic filter layer, cover this thin film transistor (TFT), these scan distribution and these data wirings;
On this chromatic filter layer, form a plurality of pixel electrodes and a common electrode, wherein formed these pixel electrodes and the configuration interlaced with each other of this common electrode;
On this chromatic filter layer, form one first alignment film, cover these pixel electrodes and this common electrode;
One second substrate is provided;
On a surface of this second substrate, form one second alignment film;
This second substrate is fixed on the top of this first substrate, and makes this second alignment film this first alignment film on this first substrate; And
Between this first alignment film and this second alignment film, inject liquid crystal layer.
8. the manufacture method of wide-angle liquid crystal display as claimed in claim 7 is characterized in that, after forming this chromatic filter layer, the surface that more is included in this chromatic filter layer forms flatness layer.
9. the manufacture method of wide-angle liquid crystal display as claimed in claim 7, it is characterized in that, this chromatic filter layer is then arranged institute by a plurality of red colorized optical filtering blocks, the colored filter area piece of a plurality of green and the colored filter area slip gauge of a plurality of blueness and is constituted, and is formed with black matrix layer between these red colorized optical filtering blocks, these green colored filter area pieces and these the blue colored filter area pieces.
10. the manufacture method of wide-angle liquid crystal display as claimed in claim 7 is characterized in that, this common electrode more comprises on this chromatic filter layer that is formed on these data wiring tops.
11. the manufacture method of wide-angle liquid crystal display as claimed in claim 7 is characterized in that, the method that forms each these thin film transistor (TFT) comprises:
On this surface of this first substrate, form a grid and be connected with this grid one of them scan distribution;
Gate insulator of formation on this first substrate covers this grid and one of them scans distribution;
On this gate insulator above this grid, form a channel layer; And
One of them these data wiring that on this channel layer, forms a source/drain and be connected with this source electrode.
12. the manufacture method of wide-angle liquid crystal display as claimed in claim 11 is characterized in that, more comprises being formed with a conductive structure in this chromatic filter layer, so that this drain electrode is electrically connected to each other with corresponding one of them these pixel electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03100629 CN1272661C (en) | 2003-01-15 | 2003-01-15 | Wide visual angle liquid crystal display device and its manufacturing method |
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| CN 03100629 CN1272661C (en) | 2003-01-15 | 2003-01-15 | Wide visual angle liquid crystal display device and its manufacturing method |
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| CN1517767A true CN1517767A (en) | 2004-08-04 |
| CN1272661C CN1272661C (en) | 2006-08-30 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100378534C (en) * | 2004-11-04 | 2008-04-02 | Lg.菲利浦Lcd株式会社 | Method for fabricating a light-shielding layer for a liquid crystal display device |
| US7623209B2 (en) | 2005-11-03 | 2009-11-24 | Au Optronics Corp. | Liquid crystal display panel and method for manufacturing thereof and liquid crystal display incorporating the same |
| CN101278224B (en) * | 2005-09-28 | 2011-01-12 | 夏普株式会社 | Liquid crystal display device |
| CN103913883A (en) * | 2012-12-28 | 2014-07-09 | 业鑫科技顾问股份有限公司 | Liquid crystal display panel and thin film transistor substrate |
| CN103913882A (en) * | 2012-12-28 | 2014-07-09 | 业鑫科技顾问股份有限公司 | Liquid crystal display panel, thin film transistor substrate and manufacturing method thereof |
| CN107505780A (en) * | 2017-09-26 | 2017-12-22 | 深圳市华星光电半导体显示技术有限公司 | BPS type array base paltes and preparation method thereof |
-
2003
- 2003-01-15 CN CN 03100629 patent/CN1272661C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100378534C (en) * | 2004-11-04 | 2008-04-02 | Lg.菲利浦Lcd株式会社 | Method for fabricating a light-shielding layer for a liquid crystal display device |
| CN101278224B (en) * | 2005-09-28 | 2011-01-12 | 夏普株式会社 | Liquid crystal display device |
| US7623209B2 (en) | 2005-11-03 | 2009-11-24 | Au Optronics Corp. | Liquid crystal display panel and method for manufacturing thereof and liquid crystal display incorporating the same |
| US8289485B2 (en) | 2005-11-03 | 2012-10-16 | Au Optronics Corp. | Liquid crystal display panel and method for manufacturing thereof and liquid crystal display incorporating the same |
| CN103913883A (en) * | 2012-12-28 | 2014-07-09 | 业鑫科技顾问股份有限公司 | Liquid crystal display panel and thin film transistor substrate |
| CN103913882A (en) * | 2012-12-28 | 2014-07-09 | 业鑫科技顾问股份有限公司 | Liquid crystal display panel, thin film transistor substrate and manufacturing method thereof |
| CN103913882B (en) * | 2012-12-28 | 2017-10-27 | 鸿富锦精密工业（深圳）有限公司 | Liquid crystal display panel, thin film transistor substrate and manufacturing method thereof |
| CN107505780A (en) * | 2017-09-26 | 2017-12-22 | 深圳市华星光电半导体显示技术有限公司 | BPS type array base paltes and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1272661C (en) | 2006-08-30 |
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