CN103904198A - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
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- CN103904198A CN103904198A CN201210588843.9A CN201210588843A CN103904198A CN 103904198 A CN103904198 A CN 103904198A CN 201210588843 A CN201210588843 A CN 201210588843A CN 103904198 A CN103904198 A CN 103904198A
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- conversion layer
- led
- light conversion
- planar light
- encapsulating structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
Abstract
The invention provides an LED packaging structure which comprises a base body, at least one LED illuminant arranged on the base body, and a planar light conversion layer which is arranged on the base body and comprises at least one light inlet surface and a light outlet surface, wherein the light outlet surface is arranged opposite to the base body or on the same side as the base body, an included angle is formed between the light inlet surface and the light outlet surface, the LED illuminant is adjacent to the light inlet surface and provides light in a first wave length for the planar light conversion layer, fluorescent powder is distributed in the planar light conversion layer as particles to enable at least a part of the light in the first wave length to be converted into light in a length different from the first wave length, and the light in the first wave length and the light with the wave length changed shine out from the light outlet surface of the planar light conversion layer together. Compared with the prior art, the LED packaging structure has the advantages that the one-layer structure is adopted to achieve the function which is achieved by a two-layer structure which comprises a light guiding plate layer and a fluorescent powder layer in the prior art, the structure is simple, cost is reduced, and the technology is simplified.
Description
Technical field
The present invention relates to a kind of encapsulating structure of semiconductor lighting device, especially a kind of LED encapsulating structure.
Background technology
At present, exploitation LED planar light emitting mainly contains two kinds of methods, a kind of is straight-down negative, as Korean Patent KR20090073432, in this structure, packaged LED device is directly placed on the top of light guide plate or light diffuser plate, through the optimization of modes of emplacement, finally realizes the luminous effect of face.Although this mode has higher light conversion efficiency, as a rule, the volume ratio of planar light emitting is larger, particularly because the thickness of superposeed light source and light guide plate is difficult to realize slimming on thickness.
Another kind of encapsulating structure is that side is illuminated, by LED being sidelong to the edge in light guide plate, realize face luminous, as U.S. Pat 2005185113, in this patent, packaged LED element is positioned over to the side of light guide plate, then perpendicular to the side-irradiation of light guide plate, and then reach the luminous effect of face through mixed light in light guide plate.But, use packaged LED element, conventionally the phototranstormation efficiency between LED and light guide plate can have substantial degradation, on the one hand because the light emission direction of packaged LED is restive, in addition on the one hand, with regard to encapsulation process itself, the light sending from LED chip has sub-fraction to be lost.
Summary of the invention
The object of the invention is the problem existing in order to solve above-mentioned LED encapsulating structure, provide a kind of low cost, structure, technique simple, the LED area source of slimming.
The present invention is for solving the problems of the technologies described above, and the technical scheme adopting is to provide a kind of LED encapsulating structure, it is characterized in that comprising:
Matrix;
At least one LED luminous element, is located at described matrix;
Planar light conversion layer, be located at described matrix, comprise at least one incidence surface and an exiting surface, described exiting surface is at offside or the homonymy of described matrix, described incidence surface and described exiting surface phase shape are in an angle, described LED luminous element is adjacent with described incidence surface, and the light of the first wavelength is provided to described planar light conversion layer;
Fluorescent material is distributed in described planar light conversion layer with particulate form, the light of the first wavelength described at least a portion is converted into wavelength and the different light of described the first wavelength, and the light of described the first wavelength exiting surface from described planar light conversion layer together with the light after Wavelength-converting penetrates.
Optionally, described fluorescent material is remote fluorescence powder.
Optionally, described fluorescent material is evenly distributed in described planar light conversion layer.
Optionally, the skewness of described fluorescent material in described planar light conversion layer, its distribution density increases with the increase of the distance of leaving described planar light conversion layer incidence surface.
Optionally, the skewness of described fluorescent material in described planar light conversion layer, its distribution density reduces with the increase of the distance of leaving described planar light conversion layer exiting surface.
Optionally, described fluorescent material is the fluorescent material of single features wavelength, or the mixed fluorescent powder of many characteristic wavelengths.
Optionally, the offside of described exiting surface is also provided with a light reflection surface, and in order to light is reflected to exiting surface, described light reflection surface is the surface topology at the metal reflective coating of matrix surface or diffusion film or impression.
Optionally, described exiting surface offside is also provided with the second exiting surface.
Optionally, described planar light conversion layer is the thin slice section bar that is mixed with the colloid curing molding of described fluorescent material.
Optionally, the sheet material that described planar light conversion layer is even thickness.
Optionally, the wedge shape of the described planar light conversion layer person of being gradient thickness.
Optionally, described planar light conversion layer is square, circular, ellipse or polygon.
Optionally, described LED luminous body position in side of described planar light conversion layer or relative two sides or three with upper side.
Optionally, described planar light conversion layer list mask has micro-structural.
Optionally, on the exiting surface on described planar light conversion layer surface, be also provided with scattering layer, described scattering layer is scattering film micro-structural prepared by high polymer, or the diffusing structure that forms of solution spraying.
Optionally, on the exiting surface on described planar light conversion layer surface, be also provided with light-extraction layer, the multi-layer film structure that material is independent or mixing other materials forms that described light-extraction layer adopts refractive index to be greater than 1.5.
Optionally, described LED encapsulating structure also comprises heat abstractor, and described heat abstractor connects described LED luminous element.
Optionally, described LED luminous element is LED element or the LED module after LED chip or encapsulation.
The present invention, owing to having adopted technique scheme, makes it compared with prior art, uses one deck structure to realize the function of original light guide plate and phosphor powder layer double-layer structure, and the scenario-frame that therefore the present invention adopts is simple, has reduced cost simultaneously, has simplified technique.Adopt remote fluorescence powder technology, reduced the self-absorption of chip to the light sending, improved light extraction efficiency, and reduce the working temperature of fluorescent material, extended useful life.Adopt side light-emitting mode to reduce the probability that occurs dazzle, be easier to realize the conversion from point-source of light to area source.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention one
Fig. 2 is the structural representation of the embodiment of the present invention two
Fig. 3 is the structural representation of the embodiment of the present invention two midplane light conversion layers
Fig. 4 is the schematic diagram of fluorescent material distribution density in planar light conversion layer of the present invention
Embodiment
LED encapsulating structure the present invention being proposed below in conjunction with the drawings and specific embodiments is described in further detail.
Fig. 1, Fig. 2 are two preferred embodiments of the present invention, Fig. 1 is embodiment mono-, Fig. 2 represents embodiment bis-, encapsulating structure provided by the invention comprises matrix 1 as seen from the figure, the matrix 1 using in invention, can select various materials, comprise and be singly not limited to glass, plastics acrylic plate, tinsel etc.And, on the surface of matrix 1, can modify again, in embodiment mono-, embodiment bis-, on matrix 1, also have one deck reflector 3.(as the metal film) that reflector 3 forms for spraying reflectorized material in embodiment mono-, in embodiment bis-, reflector 3 is that diffusion film is (as polymer scattering layer.Certainly can also carry out on the surface of matrix 1 other and process, as surperficial roughening, or impression micro-structural etc.Further, the shape of matrix 1 also can be selected flexibly.
On matrix 1, place a planar light conversion layer 4, planar light conversion layer 4 is that translucent phosphor powder layer is to mix the also thin slice section bar of curing molding with the solvent-borne type material of silica gel, glass or other type by fluorescent material (comprising common phosphors or semiconductor-quantum-point luminescent material etc.) in the present embodiment.Planar light conversion layer 4 comprises incidence surface and exiting surface, please refer to Fig. 1, Fig. 2 because its for slab construction, described exiting surface is dull and stereotyped plane, with the face of matrix almost parallel, can be in matrix one side, also can be at matrix offside.Certainly, in other preferred embodiment, if matrix adopting transparent material, exiting surface also can be in matrix one side, or has light to penetrate in both sides.The face that connects bottom surface and exiting surface is incidence surface.Exiting surface is vertical with incidence surface in the present embodiment, in other preferred embodiments incidence surface also may with exiting surface out of plumb, if the cross section of planar light conversion layer 4 can be trapezoidal, also plane not necessarily of described incidence surface, can be one section of arc surface.
On matrix 1, be also provided with LED luminous element 2, the incidence surface of itself and plane light conversion layer 4 is adjacent, and the light of the fixed wave length of its ejaculation is irradiated into planar light conversion layer 4 perpendicular to incidence surface.Because planar light conversion layer 4 can be selected various shape, include but not limited to square, circular, ellipse and polygon, LED luminous element 2 also can arrange flexibly, as be arranged in a side of planar light conversion layer 4, or two sides that the planar light conversion layer 4 that is placed on symmetric shape is relative, can also be arranged in all sides of whole planar light conversion layer 4.Certainly can understand, if be arranged in multiple sides, incidence surface also will have multiple so.Provide light at one or more LED luminous elements 2 that can arrange of each incidence surface simultaneously.LED luminous element 2 can be the LED chip that there is no encapsulation, can also use packaged LED element or LED module, for example, added the LED element of short range fluorescent material, has added LED unit of process fluorescent material and encapsulation light shield etc.The demand of simultaneously considering LED heat radiation, LED luminous element 2 is also connected with heat abstractor 7 in the present embodiment.
In addition, in the present invention, involved LED chip can use energy that various characteristic wavelengths the are corresponding excitation energy higher than fluorescent material used, so that energy can effectively change, and realizes rational mixed light.For example LED chip can be selected UV LED, blue led, and green LED etc., the energy that then characteristic wavelength of corresponding fluorescent material is corresponding is lower than the corresponding wavelength energy of LED chip, for example, red fluorescence powder etc.Certainly, in the selection of fluorescent material, can be the fluorescent material of single features wavelength, can be also the mixed fluorescent powder of many characteristic wavelengths.Simultaneously, in planar light conversion layer 4, fluorescent material distribution can be in distribution uniformly and thin slice, as shown in Fig. 4 a, can adopt distribution heterogeneous for reaching better light mixing effect, as described in as shown in Fig. 4 b fluorescent material as described in distribution density in planar light conversion layer 4 increase with the increase of the distance of planar light conversion layer 4 incidence surfaces as described in leaving, or as described in as shown in Fig. 4 c fluorescent material as described in distribution density in planar light conversion layer 4 reduce with the increase of the distance of planar light conversion layer 4 exiting surfaces as described in leaving.
In the design of planar light conversion layer 4, can select according to actual face luminous characteristics, include but not limited to the cube sheet material of even thickness, as embodiment sees Fig. 1, or the wedge shape of gradient thickness, as embodiment bis-is shown in Fig. 2.Certainly can carry out multiple processing on planar light conversion layer 4 surfaces, to make the face illumination effect of final element controlled, reach needed illumination effect, as surface roughening or the surperficial section bar with special micro-structural of employing, its structure for amplifying can be with reference to figure 3.Said micro-structural in the present invention, can be a surface that is attached to planar light conversion layer 4, or upper and lower two surfaces.Micro-structural can adopt the various structures such as depression, salient point, ripple, sawtooth, and its point also can adopt different distribution densities according to the distance apart from light source.
In embodiment mono-, two, on planar light conversion layer 4, be also coated with scattering layer 6, scattering layer 6 can be the scattering film micro-structural of being prepared by high polymer, or the diffusing structure directly being formed by solution spraying, as directly applied silicon dioxide (SiO at phosphor powder layer
2) particulate or other particle etc., form after film, reach scattering of light effect.On scattering layer 6, can also add again one deck light-extraction layer 5, to improve light extraction efficiency, in general, the refractive index of the material of light-extraction layer 5 is greater than 1.5, light-extraction layer adopts refractive index to be greater than 1.5 material and makes, or is greater than 1.5 and be less than the multi-layer film structure that 1.5 material forms by refractive index.And as required, prepare in the above various micro-structurals, by improving the path of light in the total reflection of planar light conversion layer 4 and scattering layer 6, to reach the object that improves light output efficiency.Adding of the scattering layer 6 certainly can understand and light-extraction layer 5 is in order to improve light output efficiency, is not in order to limit protection scope of the present invention, also can not comprise in other embodiments of the invention these structures, or only include in both.
Above description of the preferred embodiment of the present invention is in order to illustrate and to describe, not want limit of the present invention or be confined to disclosed concrete form, obviously, may make many modifications and variations, these modifications and variations may be obvious to those skilled in the art, within should being included in the scope of the present invention being defined by appended claims.
Claims (18)
1. a LED encapsulating structure, is characterized in that comprising:
Matrix;
At least one LED luminous element, is located at described matrix;
Planar light conversion layer, be located at described matrix, comprise at least one incidence surface and an exiting surface, described exiting surface is at offside or the homonymy of described matrix, described incidence surface and described exiting surface phase shape are in an angle, described LED luminous element is adjacent with described incidence surface, and the light of the first wavelength is provided to described planar light conversion layer;
Fluorescent material is distributed in described planar light conversion layer with particulate form, the light of the first wavelength described at least a portion is converted into wavelength and the different light of described the first wavelength, and the light of described the first wavelength exiting surface from described planar light conversion layer together with the light after Wavelength-converting penetrates.
2. LED encapsulating structure according to claim 1, is characterized in that described fluorescent material is remote fluorescence powder.
3. LED encapsulating structure according to claim 1, is characterized in that described fluorescent material is evenly distributed in described planar light conversion layer.
4. LED encapsulating structure according to claim 1, is characterized in that the skewness of described fluorescent material in described planar light conversion layer, and its distribution density increases with the increase of the distance of leaving described planar light conversion layer incidence surface.
5. LED encapsulating structure according to claim 1, is characterized in that the skewness of described fluorescent material in described planar light conversion layer, and its distribution density reduces with the increase of the distance of leaving described planar light conversion layer exiting surface.
6. LED encapsulating structure according to claim 1, is characterized in that described fluorescent material is the fluorescent material of single features wavelength, or the mixed fluorescent powder of many characteristic wavelengths.
7. according to the LED encapsulating structure described in claim 1,2,3,4,5 or 6, the offside that it is characterized in that described exiting surface is also provided with a light reflection surface, in order to light is reflected to exiting surface, described light reflection surface is the surface topology at the metal reflective coating of matrix surface or diffusion film or impression.
According to described in claim 1,2,3,4,5 or 6 LED encapsulating structure, it is characterized in that described exiting surface offside is also provided with the second exiting surface.
9. according to the LED encapsulating structure described in claim 1,2,3,4,5 or 6, it is characterized in that described planar light conversion layer is the thin slice section bar that is mixed with the colloid curing molding of described fluorescent material.
10. LED encapsulating structure according to claim 9, is characterized in that the sheet material that described planar light conversion layer is even thickness.
11. LED encapsulating structures according to claim 9, is characterized in that the wedge shape of the described planar light conversion layer person of being gradient thickness.
12. according to the LED encapsulating structure described in claim 10 or 11, it is characterized in that described planar light conversion layer is square, circular, ellipse or polygon.
13. LED encapsulating structures according to claim 12, it is characterized in that described LED luminous body position in side of described planar light conversion layer or relative two sides or three with upper side.
14. according to the LED encapsulating structure described in claim 1,2,3,4,5 or 6, it is characterized in that described planar light conversion layer list mask has micro-structural.
15. according to the LED encapsulating structure described in claim 1,2,3,4,5 or 6, it is characterized in that being also provided with scattering layer on the exiting surface on described planar light conversion layer surface, described scattering layer is scattering film micro-structural prepared by high polymer, or the diffusing structure that forms of solution spraying.
16. according to the LED encapsulating structure described in claim 1,2,3,4,5 or 6, it is characterized in that being also provided with light-extraction layer on the exiting surface on described planar light conversion layer surface, described light-extraction layer adopts refractive index to be greater than 1.5 material separately or mixes the multi-layer film structure of other materials composition.
17. according to the LED encapsulating structure described in claim 1,2,3,4,5 or 6, it is characterized in that described LED encapsulating structure also comprises heat abstractor, and described heat abstractor connects described LED luminous element.
18. according to the LED encapsulating structure described in claim 1,2,3,4,5 or 6, it is characterized in that described LED luminous element is LED element or the LED module after LED chip or encapsulation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210588843.9A CN103904198A (en) | 2012-12-29 | 2012-12-29 | LED packaging structure |
| PCT/CN2013/000735 WO2014101255A1 (en) | 2012-12-29 | 2013-06-24 | Led package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210588843.9A CN103904198A (en) | 2012-12-29 | 2012-12-29 | LED packaging structure |
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| CN103904198A true CN103904198A (en) | 2014-07-02 |
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| CN201210588843.9A Pending CN103904198A (en) | 2012-12-29 | 2012-12-29 | LED packaging structure |
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| CN (1) | CN103904198A (en) |
| WO (1) | WO2014101255A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409592A (en) * | 2014-11-26 | 2015-03-11 | 京东方科技集团股份有限公司 | LED (light emitting diode), light guide plate, backlight module and display device |
| CN108803147A (en) * | 2018-07-02 | 2018-11-13 | 京东方科技集团股份有限公司 | Backlight module and display device with it |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1566999A (en) * | 2003-06-27 | 2005-01-19 | 鸿富锦精密工业（深圳）有限公司 | Backlight module and light guiding board |
| CN1619840A (en) * | 2003-11-22 | 2005-05-25 | 鸿富锦精密工业（深圳）有限公司 | Luminous diode and surface light source device |
| CN101459163A (en) * | 2007-12-12 | 2009-06-17 | 富士迈半导体精密工业（上海）有限公司 | Light emitting diode |
| CN102374492A (en) * | 2010-08-12 | 2012-03-14 | 海洋王照明科技股份有限公司 | Light guide plate and preparation method thereof, light-emitting diode (LED) plane light source and display |
| CN102410498A (en) * | 2010-09-23 | 2012-04-11 | 展晶科技(深圳)有限公司 | Light-emitting diode (LED) backlight module and light guide plate thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI291770B (en) * | 2003-11-14 | 2007-12-21 | Hon Hai Prec Ind Co Ltd | Surface light source device and light emitting diode |
| US7481562B2 (en) * | 2004-11-18 | 2009-01-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for providing illuminating light using quantum dots |
| CN101482247A (en) * | 2008-01-11 | 2009-07-15 | 富士迈半导体精密工业（上海）有限公司 | Illuminating apparatus |
| CN101625076A (en) * | 2008-07-11 | 2010-01-13 | 智仁科技开发股份有限公司 | Light-emitting diode (LED) backlight module with fluorescent powder |
| CN203071128U (en) * | 2012-12-29 | 2013-07-17 | 欧普照明股份有限公司 | LED packaging structure |
-
2012
- 2012-12-29 CN CN201210588843.9A patent/CN103904198A/en active Pending
-
2013
- 2013-06-24 WO PCT/CN2013/000735 patent/WO2014101255A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1566999A (en) * | 2003-06-27 | 2005-01-19 | 鸿富锦精密工业（深圳）有限公司 | Backlight module and light guiding board |
| CN1619840A (en) * | 2003-11-22 | 2005-05-25 | 鸿富锦精密工业（深圳）有限公司 | Luminous diode and surface light source device |
| CN101459163A (en) * | 2007-12-12 | 2009-06-17 | 富士迈半导体精密工业（上海）有限公司 | Light emitting diode |
| CN102374492A (en) * | 2010-08-12 | 2012-03-14 | 海洋王照明科技股份有限公司 | Light guide plate and preparation method thereof, light-emitting diode (LED) plane light source and display |
| CN102410498A (en) * | 2010-09-23 | 2012-04-11 | 展晶科技(深圳)有限公司 | Light-emitting diode (LED) backlight module and light guide plate thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409592A (en) * | 2014-11-26 | 2015-03-11 | 京东方科技集团股份有限公司 | LED (light emitting diode), light guide plate, backlight module and display device |
| US9529133B2 (en) | 2014-11-26 | 2016-12-27 | Boe Technology Group Co., Ltd. | LED device, light guide plate and backlight module |
| CN108803147A (en) * | 2018-07-02 | 2018-11-13 | 京东方科技集团股份有限公司 | Backlight module and display device with it |
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| WO2014101255A1 (en) | 2014-07-03 |
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