CN103904153A - Solar cell preparing method and prepared solar cell - Google Patents
Solar cell preparing method and prepared solar cell Download PDFInfo
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- CN103904153A CN103904153A CN201210572769.1A CN201210572769A CN103904153A CN 103904153 A CN103904153 A CN 103904153A CN 201210572769 A CN201210572769 A CN 201210572769A CN 103904153 A CN103904153 A CN 103904153A
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000009792 diffusion process Methods 0.000 claims abstract description 44
- 239000002002 slurry Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 125000004429 atom Chemical group 0.000 claims description 17
- 125000004437 phosphorous atom Chemical group 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a solar cell prepared method and a prepared solar cell. The solar cell preparing method comprises a diffusion method for selective emitter formation. The diffusion method comprises the following steps: a first drive step is executed to drive doping atoms in first doping slurry into a predetermined region of a wafer; preoxidation is executed to generate silicon oxide on the surface of the wafer; deposition is executed to form phosphorosilicate glass on the surface of the wafer through a second doping source; and a second drive step is executed to drive doping atoms in the phosphorosilicate glass into the wafer. According to the invention, the residue of the slurry for forming a selective diffusion region on the wafer can be prevented in the solar cell manufacturing process, and the diffusion region having the excepted performance can be formed in the existing production line without adding additional cost.
Description
Technical field
Relate generally to of the present invention is prepared method and the solar cell of solar cell, and relates more specifically to the method for diffusion forming for selective emitter in the preparation of solar cell.
Background technology
Known that selective emitter (Selective Emitter, SE) is the extremely important part in solar cell, it affects the photoelectric conversion efficiency of solar cell.Selective emitter is so a kind of structure, it has two kinds of diffusion regions, a kind of for be formed in wafer and the bus of solar cell under the dark diffusion region of heavy doping (being also referred to as hereinafter " SE district "), and another kind of for being formed on the shallow diffusion region of light dope (being also referred to as hereinafter " place ") in other regions that are different from the dark diffusion region of heavy doping in wafer.Therefore the key that, selective emitter forms is how to form said two kinds of diffusion regions above.
Traditional diffusion technology forming for selective emitter generally comprises following steps: the air temperature and current of stablizing diffusion furnace; Wafer is carried out to pre-oxidation, and this preoxidation time is very short, for example about a few minutes; Form different foreign atom sources at the diverse location of wafer surface; By wafer being remained on to uniform temperature, the foreign atom in foreign atom source is driven in wafer, to form described selective emitter SE district and place.
But, at traditional method of diffusion forming for selective emitter, be difficult to guarantee the performance in these two diffusion region, HeSE district, desirable place, for example simultaneously, the value of desirable square resistance, thus cause the photoelectric conversion efficiency of solar cell not high.
Therefore, there is the demand of the method for diffusion forming for selective emitter that can significantly not increase cost and process complexity for improving diffusion region performance.
Summary of the invention
An object of the present invention is to provide a kind of method of preparing solar cell, the method comprises the method for diffusion forming for selective emitter, and wherein this method of diffusion comprises: carry out first and drive so that the foreign atom in the first doping slurry is driven in the presumptive area of wafer; Carry out pre-oxidation to generate Si oxide in wafer surface; Carry out deposition to utilize the second doped source to form phosphorosilicate glass in wafer surface; And carry out the second driving so that the foreign atom in described phosphorosilicate glass is driven in wafer.
Another object of the present invention has been to provide a kind of solar cell of preparing according to method as above.
According to the present invention, can be simultaneously obtain desirable diffusion region performance in HeSE district, the place of wafer in these two, thus the solar cell of excellent, manufacturing cost and process complexity do not increase simultaneously.
Accompanying drawing explanation
From the below detailed description to embodiment and accompanying drawing, it is clearer that the present invention will become.In the accompanying drawings,
Fig. 1 is according to the flow chart of the method for diffusion forming for selective emitter of the present invention; And
Fig. 2 is the schematic section that reflects that method of diffusion as shown in Figure 1 changes at the chip architecture of each step acquisition.
Embodiment
Describe below with reference to the accompanying drawings illustrative embodiment of the present invention in detail.
As known, selective emitter is the extremely important part in solar cell, and it affects the photoelectric conversion efficiency of solar cell.Therefore the method for diffusion, forming for selective emitter is extremely important in the preparation of solar cell.
Fig. 1 is according to the flow chart of the processing of the method for diffusion 100 forming for selective emitter of the present invention, and Fig. 2 is the schematic section that reflects that method of diffusion as shown in Figure 1 changes at the chip architecture of each step acquisition.This method of diffusion 100 is not only applicable to the formation of the selective emitter of solar cell, and can be applied to the formation of the different doped regions of other semiconductor device.As shown in Figure 1, this method of diffusion 100 starts with step S101,, stablizes the air temperature and current in diffusion furnace that is.By doing like this, can reduce environmental aspect and be opposite to the harmful effect of the wafer in diffusion furnace.In one embodiment, in the case of the air temperature and current in diffusion furnace is more stable, this step S101 can be omitted, and as shown in Figure 2, step S101 is with empty wire frame representation.
The method then proceeds to step S102, at step S102, carries out first and drives, so that the foreign atom in the first alloy slurry is only driven in the presumptive area in wafer.Particularly, in this step S102, the first alloy slurry is printed in wafer surface with predetermined pattern by screen printing technique, as shown in Fig. 2 (a), wherein, label 201 represents that wafer and label 202 represent to be printed onto the doping of first on wafer slurry, and wafer is maintained at certain period of preset temperature, thereby make the foreign atom in the first slurry be driven into the presumptive area in wafer, as shown in Fig. 2 (b), wherein label 203 represents described presumptive area.Described presumptive area is corresponding with described predetermined pattern and will be used to SE district.In one embodiment, described predetermined pattern is the pattern of similar main grid line or thin grid line.
In addition,, in step S102, can control foreign atom in the first doping slurry to enter separately SE district with place doping subsequently by controlling atmosphere in duration and the diffusion furnace of described the first period.In one embodiment, preset temperature can be in the temperature range of 810-870, and the first period can be in the scope of 20-70 minute.
In addition, in step S102, the first doping slurry can be based on phosphoric acid can printing slurry, correspondingly, foreign atom is phosphorus atoms, thus N-shaped adulterates and is performed, as shown in Fig. 2 (b).In one embodiment, the first doping slurry is printed in the presumptive area of wafer surface by screen printing technique.In this case, owing to there is no the outdiffusion of obvious alloy gas phase, foreign atom is only driven in the presumptive area of wafer.
In addition, in step S102, after the first actuation step, may have remaining slurry, this remaining slurry is relevant with organic solvent and other materials in the first doping slurry.But, this remaining slurry can by heat budget extra in the first driving be broken down into gas phase and by flow through diffusion furnace such as N
2and so on air-flow be carried out diffusion furnace.Therefore, the first driving only affects SE district, can not cause harmful effect, also without the additional technical steps for removing remaining slurry to the formation of follow-up place.In one embodiment, in diffusion furnace, be also introduced into O
2air-flow as environmental gas to reduce surface and gather and to regulate doping performance.
After step S102, this method of diffusion proceeds to step S103, and wherein, pre-oxidation is performed.Particularly, in this step S103, wafer is at O
2under atmosphere, be maintained at preset temperature a period of time, for example a few minutes, to form Si oxide on wafer, as shown at Fig. 2 (c), wherein, label 204 represents formed Si oxide.
After step S103, this method of diffusion proceeds to step S104, wherein, utilizes the second doped source slurry sedimentary phosphor silex glass (PSG) on the wafer with Si oxide, as shown at Fig. 2 (d), wherein label 205 represents formed PSG.In this step, the second doped source can be POCL3, and therefore PSG obtains with reacting of POCL3 by Si oxide.
After step S104, this method of diffusion finally proceeds to step S105, and wherein, the second driving is performed, and is driven in wafer with the foreign atom that makes described PSG.Particularly, in this step, the wafer that deposits PSG was maintained at for the 3rd temperature a period of time, entered into wafer so that the phosphorus atoms in PSG drives.So, heavily doped region (, SE district) and light doping section (, place) are formed, and as shown in Fig. 2 (e), thereby this method of diffusion 100 finishes.
Visible, first method of diffusion of the present invention utilizes the first slurry only to be adulterated in the specific region that will be used as SE region in wafer, then utilize the second slurry to adulterate to whole wafer almost, like this, described specific region will form heavily doped region using as SE district, and all the other regions will form lightly doped region using as place.In method of diffusion of the present invention, the first driving only has influence on SE region, can not cause any adverse effect to place doping subsequently, thereby the doping that can better control zones of different is to realize desirable performance.
In the above embodiments, in the first slurry and the second slurry, contain phosphorus atoms, therefore phosphorus atoms is driven in wafer to form N-shaped doping SE district and place as foreign atom.But the present invention can adopt other atoms to adulterate to realize N-shaped as foreign atom.In addition, the present invention also can adopt other slurries to form P type doping SE district and place.
Above-described embodiment only describes the method for diffusion forming for selective emitter in detail.But, method of diffusion of the present invention can be preliminary steps such as wafer selecting and wafer placement and subsequent steps such as electrode formation in conjunction with to prepare solar cell.
Although below describe embodiments of the invention in detail with reference to accompanying drawing, should notice that above explanation is only indicative and nonrestrictive.Those skilled in the art can be by claims but not carry out various modifications and replacement in the scope of the present invention that above-mentioned specific embodiment limits.
Claims (10)
1. prepare a method for solar cell, comprise the method for diffusion forming for selective emitter, described method of diffusion comprises the following steps:
Carrying out first drives so that the foreign atom in the first doping slurry is only driven in the presumptive area of wafer;
Carry out pre-oxidation to generate Si oxide in wafer surface;
Carry out deposition to utilize the second doped source to form phosphorosilicate glass in wafer surface; And
Carrying out second drives so that the foreign atom in described phosphorosilicate glass is driven in wafer.
2. method according to claim 1, wherein, carries out first and drives and comprise with predetermined pattern the first doping slurry is printed on to wafer surface and wafer is remained on to certain period of preset temperature.
3. method according to claim 2, wherein, described preset temperature is in the scope of 810-870 degree Celsius.
4. method according to claim 2, wherein, described certain period is in the scope of 20-70 minute.
5. method according to claim 2, wherein, described the first doping slurry is printed in wafer surface by screen printing technique.
6. method according to claim 2, wherein said predetermined pattern is the pattern of similar main grid line or thin grid line.
7. method according to claim 1, wherein, described the first doping slurry comprise based on phosphoric acid can printing slurry, and described foreign atom is phosphorus atoms.
8. method according to claim 1, wherein, described the second doped source comprises POCL3.
9. method according to claim 1, be also included in described first drive before, stablize the air temperature and current in the diffusion furnace that described wafer is placed therein.
10. a solar cell prepared by method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210572769.1A CN103904153A (en) | 2012-12-25 | 2012-12-25 | Solar cell preparing method and prepared solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210572769.1A CN103904153A (en) | 2012-12-25 | 2012-12-25 | Solar cell preparing method and prepared solar cell |
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| CN103904153A true CN103904153A (en) | 2014-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210572769.1A Pending CN103904153A (en) | 2012-12-25 | 2012-12-25 | Solar cell preparing method and prepared solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114188436A (en) * | 2020-09-15 | 2022-03-15 | 一道新能源科技(衢州)有限公司 | Silicon substrate preparation method and solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114188436A (en) * | 2020-09-15 | 2022-03-15 | 一道新能源科技(衢州)有限公司 | Silicon substrate preparation method and solar cell |
| CN114188436B (en) * | 2020-09-15 | 2024-03-15 | 一道新能源科技股份有限公司 | Silicon substrate preparation method and solar cell |
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Application publication date: 20140702 |