CN103903973B - The method that high K dielectric is grown on Graphene using spin coating liquid metal Seed Layer - Google Patents
The method that high K dielectric is grown on Graphene using spin coating liquid metal Seed Layer Download PDFInfo
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- CN103903973B CN103903973B CN201410078021.5A CN201410078021A CN103903973B CN 103903973 B CN103903973 B CN 103903973B CN 201410078021 A CN201410078021 A CN 201410078021A CN 103903973 B CN103903973 B CN 103903973B
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- graphene
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- seed layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
Abstract
The invention belongs to carbon-based ic manufacturing technology field, and in particular to a kind of method that utilization spin coating liquid metal Seed Layer grows high K dielectric on Graphene.The present invention is first deposited one layer thin of metallic aluminium Seed Layer and is allowed to be exposed in oxygen atmosphere in graphenic surface using the method for high-temperature spin-on liquid metal and is oxidized, and grows high K dielectric by the method for ald again afterwards.It is a kind of novel method that aluminum Seed Layer is formed on Graphene by the method for high-temperature vacuum spin coating liquid metal aluminium, and this method causes to damage minimum to Graphene, does not destroy the lattice structure of Graphene.The inventive method can be directly applied in the middle of the planar device preparation of nanoscale, it is also possible to used as the basic processing technique of graphene-based electronic device.
Description
Technical field
The invention belongs to carbon-based ic manufacturing technology field, and in particular to high K dielectric is grown on a kind of Graphene thin
The method of film.
Background technology
In field of semiconductor manufacture, continuous extension and the depth of Moore's Law cause si-substrate integrated circuit device size distance
Its physics limit is more and more nearer.2004, it has been found that a kind of novel semiconductor material --- Graphene（Graphene）.Stone
Black alkene（Graphene）The cellular two dimensional crystal being made up of monolayer hexagonal cellular carbon atom, is a layer in graphite, Fig. 1 institutes
It is shown as the basic structure schematic diagram of Graphene.Graphene with the carrier mobility high more than silicon, for zero energy gap
Graphene applies electric field, is doped or is prepared into the process such as graphene nanobelt, can open the forbidden band of Graphene so that
It becomes a kind of semi-conducting material of excellent performance.Based on its unique two-dimensional structure and physical characteristics, Graphene is considered as
It is expected to continue the important materials of Moore's Law in next generation's integrated circuit.
It is the key for manufacturing graphene-based field-effect transistor in the ultra-thin high K dielectric of graphenic surface deposit.But by
There is no dangling bonds, chemical property torpescence in graphenic surface so that high K dielectric is deposited by atomic deposition method and is stranded very much
It is difficult.Before using the method growth high K dielectric of ald, it is necessary to carry out activation processing to graphenic surface, such as use
The method such as nitrogen dioxide or ozone carries out pretreatment to graphenic surface, can Graphene can be caused to damage in this way
Wound, is greatly reduced the mobility of Graphene.Seed Layer can first be deposited in Graphene, then pass through atomic layer deposition in Seed Layer
Long-pending method deposit high K dielectric, the general method using electron beam evaporation form metal seed layer on Graphene, but electronics
The method of beam evaporation also can cause larger damage to the lattice of Graphene.Present invention shape on Graphene using the method for spin coating
Into metal seed layer, the impact very little caused to Graphene, the destruction of Graphene lattice is not caused, after oxidation, can be by original
The method deposit high K dielectric of sublayer deposition.This is a kind of effective and novel method, is further promoted carbon-based integrated circuit
Development.
The content of the invention
It is an object of the invention to propose it is a kind of to Graphene cause damage it is little, do not destroy the lattice structure of Graphene,
The method that uniform high K dielectric is grown on Graphene, the growing method of this high K dielectric can be after future surmounts silicon materials
Overall application is obtained in carbon-based large scale integrated circuit manufacture.
The method that high K dielectric is grown on Graphene proposed by the present invention, concrete steps include：
Offer needs the Graphene sample for growing high K dielectric；
Using high-temperature vacuum spin coating liquid metal technology, metal aluminium film is prepared on Graphene sample, as aluminum seed
Layer；
Graphene sample is placed in oxygen atmosphere, aluminum Seed Layer is fully oxidized；
High K dielectric thin film is grown on Graphene sample using Atomic layer deposition method.
Further, described offer needs the graphene film sample for growing high K dielectric grow or shift
With in certain thickness dielectric substrate.By high-temperature vacuum spin coating liquid metal technology sample surfaces grow one layer it is ultra-thin
High-purity aluminium film, controls the thickness of aluminum Seed Layer in 2-3 nm.Afterwards sample is exposed in oxygen atmosphere, in sample surfaces
After aluminum Seed Layer is fully oxidized, high K dielectric is grown on the sample for scribble cushion by the method for ald.
The present invention forms metal seed layer on Graphene using high-temperature vacuum spin coating liquid metal technology, and Graphene is made
Into damage it is minimum, then by ald, it is possible to achieve the growth of high K dielectric on Graphene.Due to being steamed using electron beam
The method sent out forms metal seed layer on Graphene and can cause larger damage to Graphene, heavy losses Graphene it is excellent
Electric property.And adopt the method for high-temperature vacuum spin coating liquid metal that the good continuous uniform of quality can be formed on Graphene
Thin film, and this method will not destroy the original lattice structure of Graphene.This method can be directly applied to nanoscale
Planar device prepare in the middle of, the method can also be used as the basic processing technique of graphene-based electronic device.
Description of the drawings
Fig. 1 is Graphene basic structure schematic diagram.
The forming process schematic diagram of the Seed Layer that Fig. 2 to Fig. 3 is provided for the present invention.
The high K dielectric forming process schematic diagram that Fig. 4 is provided for the present invention.
Fig. 5 is operational flowchart of the present invention.
Specific embodiment
The method of use high-temperature vacuum spin coating liquid metal proposed by the invention forms metal seed layer on Graphene,
Then pass through ald and high K dielectric can be formed on Graphene.By the method for high-temperature vacuum spin coating is simple and convenient can
Lean on, the good continuous uniform metal aluminium film of quality can be formed on Graphene.Most importantly this method is to graphite
Alkene causes to damage very little, does not damage the excellent electric property of Graphene.By aluminum Seed Layer, ald can form matter
Measure good high K dielectric.Described below is to realize atom using utilization spin coating liquid metal Seed Layer proposed by the invention
The embodiment of layer deposition high K dielectric.
In figure, for convenience of explanation, structure size and ratio do not represent actual size.
First, one layer of SiO of growth on Si substrates 1012Thin film 102, then the graphene film of CVD growth is transferred to
SiO2Surface, forms graphene film 103, as shown in Figure 2.
Next, preparing high-purity aluminium film using high-temperature vacuum spin coating liquid metal technology.Under elevated temperature in vacuo,
Liquid metal aluminium in spin coating on Graphene, the lamellar metallic aluminium Seed Layer 104 of shape, THICKNESS CONTROL in 2-3 nm, such as Fig. 3 institutes
Show.
Next, sample is placed in the atmosphere of oxygen so that the aluminum film layer of sample surfaces is fully oxidized.
Next, high K dielectric is deposited in sample surfaces by the means of ald.Concretely comprise the following steps, reaction is set
Temperature is 100 DEG C and reacting by heating chamber, and sample is put into ALD reaction chambers, when temperature reaches design temperature, selects trimethyl aluminium
With water as reaction source, setting number reaction time, ald is proceeded by.After reaction terminates, source, cleaning pipe are closed
Road, takes out sample, forms high K dielectric 105, as shown in Figure 4.
As described above, without departing from the spirit and scope of the invention, can also constitute many has very big difference
Embodiment.It should be appreciated that except as defined by the appended claims, the invention is not restricted to described concrete in the description
Example.
Claims (2)
1. a kind of method that utilization spin coating liquid metal Seed Layer grows high K dielectric on Graphene, it is characterised in that concrete to walk
Suddenly it is：
Offer needs the Graphene sample for growing high K dielectric；
Using high-temperature vacuum spin coating liquid metal technology, metal aluminium film is prepared on Graphene sample, as aluminum Seed Layer；
Graphene sample is placed in oxygen atmosphere, aluminum Seed Layer is fully oxidized；
High K dielectric thin film is grown on Graphene sample using Atomic layer deposition method；
The thickness of the aluminum Seed Layer is in 2-3nm.
2. it is according to claim 1 growth high K dielectric method, it is characterised in that the Graphene sample of offer be growth or
Person is shifted on certain thickness dielectric substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410078021.5A CN103903973B (en) | 2014-03-05 | 2014-03-05 | The method that high K dielectric is grown on Graphene using spin coating liquid metal Seed Layer |
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| CN201410078021.5A CN103903973B (en) | 2014-03-05 | 2014-03-05 | The method that high K dielectric is grown on Graphene using spin coating liquid metal Seed Layer |
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| CN103903973A CN103903973A (en) | 2014-07-02 |
| CN103903973B true CN103903973B (en) | 2017-03-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EA201890168A1 (en) * | 2015-07-13 | 2018-08-31 | Крайонано Ас | NANO WIRES OR NANOPYRAMIDS GROWN ON GRAPHITE SUBSTRATE |
| JP7066610B2 (en) | 2015-07-13 | 2022-05-13 | クラヨナノ エーエス | A composition comprising a light emitting diode device, a photodetector device, and nanowires or nanopyramids on a graphite substrate. |
| AU2016302692B2 (en) | 2015-07-31 | 2019-04-18 | Crayonano As | Process for growing nanowires or nanopyramids on graphitic substrates |
| GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
| JP7322064B2 (en) * | 2018-04-25 | 2023-08-07 | コンコード （エイチケー） インターナショナル エデュケーション リミテッド | Apparatus and method for reflective image display with dielectric layer |
| CN111627990B (en) * | 2020-05-07 | 2023-08-08 | 中国人民解放军国防科技大学 | Method for preparing top gate type field effect transistor by utilizing thermal evaporation aluminum seed layer |
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| US8198707B2 (en) * | 2009-01-22 | 2012-06-12 | Board Of Regents, The University Of Texas System | Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene |
| CN101986145B (en) * | 2010-09-30 | 2012-11-21 | 浙江大学 | Nanopore electrical sensor |
| CN102097297B (en) * | 2010-11-16 | 2012-07-04 | 复旦大学 | Method for depositing high k gate dielectrics on atomic layer on graphene surface by adopting electric field induction |
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