CN103898477A - Substrate supporting seat - Google Patents
Substrate supporting seat Download PDFInfo
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- CN103898477A CN103898477A CN201210574071.3A CN201210574071A CN103898477A CN 103898477 A CN103898477 A CN 103898477A CN 201210574071 A CN201210574071 A CN 201210574071A CN 103898477 A CN103898477 A CN 103898477A
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- hot face
- area
- nichrome wire
- heating
- group
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Abstract
The invention relates to the technical field of chemical vapor deposition and in particular relates to a substrate supporting seat. The substrate supporting seat comprises a substrate supporting tray and a heating device which are opposite to each other, wherein the substrate supporting tray is used for supporting the substrate to be treated; the heating device comprises a bottom tray provided with a heating surface and multiple electric heating wires of which two ends are connected with binding posts; the heating surface faces the substrate supporting tray; and the substrate supporting seat is characterized in that the electric heating wires are arranged on the heating surface of the bottom tray; and the binding posts are arranged at the periphery of the heating surface. The arrangement mode of the electric heating wires is changed, so that the electric heating wires can be uniformly arranged on the heating surface of the bottom tray, and the defect that the bottom tray is non-uniformly heated because the local temperature is extremely low is overcome.
Description
Technical field
The present invention relates to the technical field of chemical vapour deposition, especially the technological improvement to heating unit in chemical gas-phase deposition system.
Background technology
In existing chemical vapour deposition (hereinafter to be referred as CVD) equipment, in conjunction with as shown in Figure 1 and Figure 2, substrate support seat 10 comprises the substrate supports dish 20 and the heating unit 30 that are oppositely arranged, and described substrate supports dish 20 is for supporting pending substrate (not shown); Described heating unit 30 comprises the nichrome wire 33 that is provided with the chassis 31 of hot face 32 and many two ends and is connected with terminal stud, described hot face 32 is towards described substrate supports dish 20, many nichrome wire 33 on heating unit 30 are coiled on 1 chassis 31, chassis, therefore need to be at the center O place of heating unit 30, or on hot face 32, somewhere A1, A2, A3, A4 arrange nichrome wire 33 terminal stud O, A1, A2, A3, A4.Because terminal stud O, A1, A2, A3, A4 do not generate heat, but can occupy the certain hot face of heating unit 30 32 areas, cause being positioned at described heating unit 30 tops substrate supports dish 20 be heated inhomogeneous.Particularly be positioned at the terminal stud O at center, because the substrate supports dish 20 that is positioned at heating unit 30 tops is in the time that described heating unit 30 devices rotate, the central point of the fixing corresponding described substrate supports dish 20 of described central point, must cause the central point temperature of substrate supports dish 20 lower than the temperature in substrate supports dish 20 other regions, directly affect the homogeneity that substrate is heated.
Summary of the invention
For addressing the above problem, the invention provides a kind of substrate support seat of chemical vapour deposition, by changing the laying mode of nichrome wire on heating unit, guarantee that the hot face on chassis is evenly laid with nichrome wire, avoid local temperature too low, cause chassis to heat inhomogeneous defect.
This substrate support seat, comprises the substrate supports dish and the heating unit that are oppositely arranged, and described substrate supports dish is used for supporting pending substrate; Described heating unit comprises the nichrome wire that is provided with the chassis of hot face and many two ends and is connected with terminal stud, and described hot face is towards described substrate supports dish, and described nichrome wire is laid on the hot face on described chassis; Described terminal stud is laid in around described hot face.
Preferably, described substrate supports dish rotates relative to described heating unit.
Preferably, described hot face comprises first area and the second area around described first area; The layout density of described nichrome wire increases to described second area gradually from described first area.
Preferably, described nichrome wire is spindle body shape and arranges on described hot face.
Preferably, described hot face comprises first area and the second area around described first area; Described nichrome wire is parallel arrangement on described hot face.
Preferably, described nichrome wire comprises the center heating group of laying through described hot face first area top, and in described center heating group both sides and be laid in above described second area sidepiece heating group; The layout density of described center heating group nichrome wire is less than described sidepiece heating group.
Preferably, also comprise boosting group, the nichrome wire of described boosting group extends and arranges along the second area of described hot face.
Preferably, also comprise boosting group, described boosting group is above described center heating group and be laid on described hot face second area.
Beneficial effect: the terminal stud of nichrome wire of the present invention is arranged on non-hot face region, neither occupies the heating-surface area of hot face, also avoids local temperature too low, causes chassis to heat inhomogeneous defect.And nichrome wire can have multiple at the arrangement mode of hot face, can adjust the state of arranging according to difform chassis and substrate supports dish.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing substrate support seat.
Fig. 2 is the laying schematic diagram of nichrome wire in existing heating unit.
Fig. 3 is that in the heating unit of the embodiment of the present invention 1, nichrome wire is laid schematic diagram.
Fig. 4 is that in the heating unit of the embodiment of the present invention 1, boosting group is laid schematic diagram.
Fig. 5 is that in the heating unit of the embodiment of the present invention 2, nichrome wire is laid schematic diagram.
Fig. 6 is that in the heating unit of the embodiment of the present invention 3, nichrome wire is laid schematic diagram.
Fig. 7 is that in the heating unit of the embodiment of the present invention 4, nichrome wire is laid schematic diagram.
Fig. 8 is that in the heating unit of the embodiment of the present invention 5, nichrome wire is laid schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated.
The present invention is the laying mode by changing nichrome wire on CVD heating unit, reduce on the one hand the occupied area of terminal stud at chassis hot face, change on the other hand existing annular electro heated filament and lay mode, realize chassis is heated comparatively uniformly, and then realize the homogeneous heating of heating unit to substrate.
Embodiment 1
As shown in Figure 1, the chemical gas-phase deposition system of the present embodiment comprises cavity 50, is provided with spray header 40 at the top of cavity 50, and cavity 50 bottoms are provided with substrate support seat 10.Wherein, substrate support seat 10 comprises the substrate supports dish 20 and the heating unit 30 that are oppositely arranged, and described substrate supports dish 20 is for supporting pending substrate.Wherein, shown in Fig. 3, described heating unit 30 comprises the nichrome wire 33 that is provided with the chassis 31 of hot face 32 and many two ends and is connected with terminal stud 34, and described hot face 32 is towards described substrate supports dish 20.Described nichrome wire 33 is laid on the hot face 32 on described chassis 31; Described terminal stud 34 is laid in around described hot face 32.Because terminal stud 34 itself is athermic, if it is installed in can occupy heating-surface area on hot face 32, make local heating's inequality.
Preferably, the relatively described heating unit 30 of described substrate supports dish 20 is rotatable, to make heating more even.
As can be seen from Figure 3, the nichrome wire 33 that many two ends are connected with terminal stud 34 is parallel to each other and is laid on the hot face 32 on described chassis 31.In described many heater strips 33, comprise one through hot face 32 central points or approach hot face 32 central points most the center nichrome wire 33a that is laid in hot face 32 tops, all the other nichrome wire 33 are laid in the both sides of described nichrome wire 33a, along with nichrome wire 33 with described center nichrome wire 33a apart from increase, spacing between described nichrome wire 33 is more and more less, arranges more and more closeer.And terminal stud 34 is arranged at outside hot face 32, can guarantee that hot face 32 lays nichrome wire 33 to greatest extent, at utmost guarantee heating uniformity.In addition, can suitable nichrome wire number be set according to the size of substrate supports dish 20.This design is in order to allow substrate supports dish 20 in the time that heating unit 30 rotates, and nichrome wire 33 will be higher than core temperature to the Heating temperature at hot face 32 edges, thereby makes the surface temperature of whole substrate supports dish 20 even.
Because terminal stud 34 is laid in hot face 32 position around, in order to strengthen the heating efficiency at hot face 32 edges, preferred, described well heater 30 also comprises along hot face 32 edges and extends boosting group 8 is set.As shown in Figure 4, lay an annular electro heated filament around this hot face 32, the terminal stud 34 at nichrome wire two ends can be arranged on outside hot face 32.This laying mode can be the edge supplement heat of hot face 32.
Embodiment 2
Shown in Figure 5, hot face 32 can be divided into first area 32a and the second area 32b around described first area 32a.Certainly, it not is what fix that the size of first area and second area is divided, and can make adjustment according to practical situation.The nichrome wire 33 that many two ends are connected with terminal stud 34 is parallel to each other and is laid on the hot face 32 on described chassis 31.The arrangement mode of the present embodiment nichrome wire 33 is different compared with embodiment 1, shown in Figure 5, nichrome wire 33 is divided into some groups, at least comprise the center heating group 5 of laying through described hot face 32 first area 32a tops, and the heating of described center organize 5 both sides and be laid in above described second area 32b sidepiece heating group I 6.For example, center heating group 5 includes many two ends and is connected with the nichrome wire 33 of terminal stud 34, and the each sidepiece heating group I 6 of laying in 5 both sides is organized in center heating, and each sidepiece heating group I 6 comprises many nichrome wire 33; Nichrome wire 33 in each heating group can be to increase gradually rule to lay according to layout density from first area 32a toward second area 32b; Also can be evenly to lay separately, in each heating group, between nichrome wire 33, layout density be consistent.Similarly, the layout density that 5 nichrome wire 33 are organized in center heating is less than both sides heating group I 6.
Embodiment 3
The arrangement mode of the present embodiment nichrome wire 33 is different compared with embodiment 1, according to the size of substrate supports dish 20, the density of nichrome wire 33 on capable of regulating hot face 32, preferably, increase again respectively a sidepiece heating group II 7 in 6 liang of outsides of sidepiece heating group I, as shown in Figure 6, Gong Yige center heating group 5 on hot face 32, two sidepiece heating group I 6, two sidepiece heating group II 7.Similarly, nichrome wire 33 the extends from a region 32a toward second area 32b and lays and layout density increases toward second area 32b gradually from first area 32a.
This laying mode can reach equally and allow substrate supports dish 20 in the time that heating unit 30 rotates, and nichrome wire 33 will be higher than core temperature to the Heating temperature at substrate supports dish 20 edges, thereby makes the surface temperature of whole substrate supports dish 20 even; And each heating group can distinguish in batches preparation, technique is simple and convenient.
Embodiment 4
As different from Example 1, preferably, as shown in Figure 7, boosting group 9 can also be above center heating group 5 and be laid on hot face 32 second area 32b for the present embodiment.For example, because nichrome wire 33 layout densities of hot face 32 first area 32a are smaller, in order to increase heat intensity, at the two ends of middle part heating group 5, hot face 32 second area 32b lay the nichrome wire 33 of some non-parallel settings, can reach equally the object of additional heat as boosting group 9.
Arrangement mode and the previous embodiment of the nichrome wire of the present embodiment are different, as shown in Figure 8, for example, described hot face 32 comprises first area 32a and the second area 32b around described first area 32a, and the division of first area 32a and second area 32b can be adjusted according to practical situation.And the layout density of described nichrome wire 33 increases to second area 32b gradually from described hot face 32 first area 32a.This design is in order to allow substrate supports dish 20 in the time that heating unit 30 rotates, and nichrome wire 33 will be higher than the temperature of central zone 32a to the second area 32b Heating temperature of hot face 32, thereby makes the surface temperature of whole substrate supports dish 20 even.Preferably, the nichrome wire 33 that described many two ends are connected with terminal stud 34 is respectively spindle body shape and is laid on described hot face 32.Lay because nichrome wire 33 is spindle body shape, the nichrome wire 33 on whole hot face 32 is arranged and is the figure of " two is close, middle dredging ", makes the edge heating temperature of hot face 32 higher thereby fusoid two is laid in the edge of hot face 32; Simultaneously fusoid middle portion change makes greatly the middle portion of heater strip 33 pile up to described hot face 32 second area 32b, makes the density of arranging that is positioned at the nichrome wire 33 of described hot face 32 second area 32b at spindle shape middle portion be greater than described first area 32a.Allow substrate supports dish 20 in the time that heating unit 30 rotates, nichrome wire 33 will be higher than core temperature to the Heating temperature at hot face 32 edges, thereby makes the surface temperature of whole substrate supports dish 20 even.
Similarly, the nichrome wire 33 of the present embodiment also can be divided into several heating groups and makes.
Nichrome wire arrangement mode of the present invention is improved to the spindle body layout of arranging or be parallel to each other by coiling to lay, and can guarantee all can be laid with nichrome wire on the hot face on chassis; And terminal stud is arranged on non-hot face region, neither occupy the heating-surface area of hot face, also avoid local temperature too low, cause chassis to heat inhomogeneous defect.By the laying of boosting group, further additional heat, guarantees the temperature heating.
Claims (8)
1. a substrate support seat, comprises the substrate supports dish and the heating unit that are oppositely arranged, and described substrate supports dish is used for supporting pending substrate; Described heating unit comprises the nichrome wire that is provided with the chassis of hot face and many two ends and is connected with terminal stud, and described hot face, towards described substrate supports dish, is characterized in that, described nichrome wire is laid on the hot face on described chassis; Described terminal stud is laid in around described hot face.
2. substrate support seat according to claim 1, is characterized in that, described substrate supports dish rotates relative to described heating unit.
3. according to substrate support seat described in claim 1 or 2, it is characterized in that, described hot face comprises first area and the second area around described first area; The layout density of described nichrome wire increases to described second area gradually from described first area.
4. substrate support seat according to claim 3, is characterized in that, described nichrome wire is spindle body shape and arranges on described hot face.
5. according to substrate support seat described in claim 1 or 2, it is characterized in that, described hot face comprises first area and the second area around described first area; Described nichrome wire is parallel arrangement on described hot face.
6. substrate support seat according to claim 5, it is characterized in that, described nichrome wire comprises the center heating group of laying through described hot face first area top, and in described center heating group both sides and be laid in above described second area sidepiece heating group; The layout density of described center heating group nichrome wire is less than described sidepiece heating group.
7. according to heating unit described in claim 1 or 2, it is characterized in that, also comprise boosting group, the nichrome wire of described boosting group extends and arranges along the second area of described hot face.
8. heating unit according to claim 6, is characterized in that, also comprises boosting group, and described boosting group is above described center heating group and be laid on described hot face second area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210574071.3A CN103898477A (en) | 2012-12-26 | 2012-12-26 | Substrate supporting seat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210574071.3A CN103898477A (en) | 2012-12-26 | 2012-12-26 | Substrate supporting seat |
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| Publication Number | Publication Date |
|---|---|
| CN103898477A true CN103898477A (en) | 2014-07-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210574071.3A Pending CN103898477A (en) | 2012-12-26 | 2012-12-26 | Substrate supporting seat |
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| CN (1) | CN103898477A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002043033A (en) * | 2000-07-19 | 2002-02-08 | Nhk Spring Co Ltd | Heater unit, and method of manufacturing the same |
| CN2814869Y (en) * | 2005-08-02 | 2006-09-06 | 中国科学院力学研究所 | Planar radiating heater |
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN102534567A (en) * | 2012-03-21 | 2012-07-04 | 中微半导体设备(上海)有限公司 | Device and method for controlling basal heating in chemical gaseous phase sedimentary chamber |
| CN203049034U (en) * | 2012-12-26 | 2013-07-10 | 光达光电设备科技（嘉兴）有限公司 | Substrate supporting seat |
-
2012
- 2012-12-26 CN CN201210574071.3A patent/CN103898477A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002043033A (en) * | 2000-07-19 | 2002-02-08 | Nhk Spring Co Ltd | Heater unit, and method of manufacturing the same |
| CN2814869Y (en) * | 2005-08-02 | 2006-09-06 | 中国科学院力学研究所 | Planar radiating heater |
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN102534567A (en) * | 2012-03-21 | 2012-07-04 | 中微半导体设备(上海)有限公司 | Device and method for controlling basal heating in chemical gaseous phase sedimentary chamber |
| CN203049034U (en) * | 2012-12-26 | 2013-07-10 | 光达光电设备科技（嘉兴）有限公司 | Substrate supporting seat |
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Application publication date: 20140702 |