CN103887969A - High-voltage power supply circuit applied to integrated circuit - Google Patents
High-voltage power supply circuit applied to integrated circuit Download PDFInfo
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- CN103887969A CN103887969A CN201410077741.XA CN201410077741A CN103887969A CN 103887969 A CN103887969 A CN 103887969A CN 201410077741 A CN201410077741 A CN 201410077741A CN 103887969 A CN103887969 A CN 103887969A
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Abstract
The invention discloses a high-voltage power supply circuit applied to an integrated circuit. The high-voltage power supply circuit comprises a field-effect tube J0, a resistor R for limiting current, a Zener diode Z0 for stabilizing voltage, an MOS tube N0, a capacitor C for stabilizing voltage and a voltage output terminal Vreg. A drain electrode of the field-effect tube J0 is connected with a high-voltage VPP, the other end of the resistor R and a cathode of the Zener diode Z0 are connected with a grid electrode of the MOS tube N0, the voltage output terminal Vreg and an anode of the capacitor C are connected with a source electrode of the MOS tube N0, and a grid electrode of the field-effect tube J0, an anode of the Zener diode Z0, a cathode of the capacitor C and a substrate electrode of the MOS tube N0 are grounded. By means of the circuit formed by the simple electronic components including the field-effect tube J0, the resistor R, the MOS tube N0, the capacitor C and the like, high-voltage power supply is achieved, and output voltage remains stable. Furthermore, the high-voltage power supply circuit is simple and practical in structure and low in power consumption.
Description
Technical field
The present invention relates to high pressure power-supply circuit technical field, relate in particular to a kind of high pressure power-supply circuit that is applied to integrated circuit.
Background technology
Integrated circuit is a kind of microelectronic device or parts, it adopts certain technique, together with the elements such as transistor, diode, resistance, electric capacity and inductance required in a circuit and wire interconnects, be produced on a fritter or a few fritter semiconductor wafer or dielectric substrate, then be encapsulated in a shell, become the microstructure with required circuit function.In circuit design technique field, high pressure power-supply circuit need to be set sometimes in integrated circuit, for example: even power taking in the high pressure of kilovolt from hundreds of.The high pressure power-supply circuit that is applied to integrated circuit in prior art, technology is very complicated, and electronic devices and components are numerous, impracticable.
Summary of the invention
The high pressure power-supply circuit that provides a kind of circuit structure to be simply applied to integrated circuit for the deficiencies in the prior art is provided.
To achieve these goals, the invention provides a kind of high pressure power-supply circuit that is applied to integrated circuit, comprise field effect transistor J0, for the resistance R of current limliting, Zener diode Z0, metal-oxide-semiconductor N0 for voltage stabilizing, the capacitor C for voltage stabilizing, output voltage terminal Vreg;
Described field effect transistor J0 drain electrode is connected with high pressure VPP, described resistance R one end, metal-oxide-semiconductor N0 drain electrode are all connected with field effect transistor J0 source electrode, the described resistance R other end, Zener diode Z0 negative electrode are all connected with metal-oxide-semiconductor N0 grid, described output voltage terminal Vreg, capacitor C positive pole are all connected with metal-oxide-semiconductor N0 source electrode, described field effect transistor J0 grid, Zener diode Z0 anode, capacitor C negative pole, the equal ground connection GND of metal-oxide-semiconductor N0 underlayer electrode.
Preferably, described metal-oxide-semiconductor N0 is NMOS pipe, and metal-oxide-semiconductor N0 is power tube.
Beneficial effect of the present invention is:
The circuit that the present invention only needs several simple electronic devices and components such as field effect transistor J0, resistance R, Zener diode Z0, metal-oxide-semiconductor N0, capacitor C to form, realize high pressure power taking, keep output voltage constant, circuit structure is simple, practical, and circuit power consumption is lower.
Brief description of the drawings
Fig. 1 is circuit theory diagrams of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Please refer to Fig. 1, the present invention is applied to the high pressure power-supply circuit of integrated circuit, comprises field effect transistor J0, for the resistance R of current limliting, Zener diode Z0, metal-oxide-semiconductor N0 for voltage stabilizing, the capacitor C for voltage stabilizing, output voltage terminal Vreg.
Wherein, field effect transistor J0 drain electrode is connected with high pressure VPP, resistance R one end, metal-oxide-semiconductor N0 drain electrode are all connected with field effect transistor J0 source electrode, the resistance R other end, Zener diode Z0 negative electrode are all connected with metal-oxide-semiconductor N0 grid, output voltage terminal Vreg, capacitor C positive pole are all connected with metal-oxide-semiconductor N0 source electrode, field effect transistor J0 grid, Zener diode Z0 anode, capacitor C negative pole, the equal ground connection GND of metal-oxide-semiconductor N0 underlayer electrode.
In the present embodiment, metal-oxide-semiconductor N0 is NMOS pipe, and metal-oxide-semiconductor N0 is power tube.
The voltage of supposing field effect transistor J0 source electrode is Vpch, the voltage of metal-oxide-semiconductor N0 grid is Vz, the threshold voltage of metal-oxide-semiconductor N0 is Vthn, specific works principle of the present invention, as follows: under the effect of being on the scene effect pipe J0, Vpch can fluctuate in lower scope, the hundreds of of VPP is even gone up the high pressure of kilovolt relatively, Vpch only has tens volts, utilize the breakdown characteristics of Zener diode Z0, it is constant that Vz keeps, resistance R plays metering function, capacitor C plays the effect of voltage stabilizing, by the effect of metal-oxide-semiconductor N0, so output voltage V reg=Vz-Vthn, and Vz, Vthn is certain, thereby keep output voltage V reg constant.
Therefore, the circuit that the present invention only needs several simple electronic devices and components such as field effect transistor J0, resistance R, Zener diode Z0, metal-oxide-semiconductor N0, capacitor C to form, realizes high pressure power taking, keeps output voltage constant, circuit structure is simple, practical, and circuit power consumption is lower.
Finally should be noted that; above embodiment is only in order to illustrate technical scheme of the present invention; but not limiting the scope of the invention; although the present invention has been done to explain with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify or be equal to replacement technical scheme of the present invention, and not depart from essence and the scope of technical solution of the present invention.
Claims (2)
1. a high pressure power-supply circuit that is applied to integrated circuit, is characterized in that: comprise field effect transistor (J0), for the resistance (R) of current limliting, the Zener diode (Z0) for voltage stabilizing, metal-oxide-semiconductor (N0), the electric capacity (C) for voltage stabilizing, output voltage terminal (Vreg);
Described field effect transistor (J0) drain electrode is connected with high pressure (VPP), described resistance (R) one end, metal-oxide-semiconductor (N0) drain electrode are all connected with field effect transistor (J0) source electrode, described resistance (R) other end, Zener diode (Z0) negative electrode are all connected with metal-oxide-semiconductor (N0) grid, described output voltage terminal (Vreg), electric capacity (C) positive pole are all connected with metal-oxide-semiconductor (N0) source electrode, described field effect transistor (J0) grid, Zener diode (Z0) anode, electric capacity (C) negative pole, the equal ground connection of metal-oxide-semiconductor (N0) underlayer electrode (GND).
2. the high pressure power-supply circuit that is applied to integrated circuit according to claim 1, is characterized in that: described metal-oxide-semiconductor (N0) is NMOS pipe, and metal-oxide-semiconductor (N0) is power tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410077741.XA CN103887969A (en) | 2014-03-04 | 2014-03-04 | High-voltage power supply circuit applied to integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410077741.XA CN103887969A (en) | 2014-03-04 | 2014-03-04 | High-voltage power supply circuit applied to integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103887969A true CN103887969A (en) | 2014-06-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410077741.XA Pending CN103887969A (en) | 2014-03-04 | 2014-03-04 | High-voltage power supply circuit applied to integrated circuit |
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| CN (1) | CN103887969A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201054548Y (en) * | 2007-06-26 | 2008-04-30 | 绿达光电(苏州)有限公司 | High-voltage start circuit for AC-DC converter |
| CN101377688A (en) * | 2008-10-06 | 2009-03-04 | 深圳市联德合微电子有限公司 | Interior power supply circuit |
| CN201503258U (en) * | 2009-09-30 | 2010-06-09 | 西安长密汽车电子科技有限公司 | Non-contact electronic accelerator pedal position sensor for automobile |
| CN201994848U (en) * | 2011-03-22 | 2011-09-28 | 安徽华东光电技术研究所 | DC-DC (direct current-direct current) power module circuit |
-
2014
- 2014-03-04 CN CN201410077741.XA patent/CN103887969A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201054548Y (en) * | 2007-06-26 | 2008-04-30 | 绿达光电(苏州)有限公司 | High-voltage start circuit for AC-DC converter |
| CN101377688A (en) * | 2008-10-06 | 2009-03-04 | 深圳市联德合微电子有限公司 | Interior power supply circuit |
| CN201503258U (en) * | 2009-09-30 | 2010-06-09 | 西安长密汽车电子科技有限公司 | Non-contact electronic accelerator pedal position sensor for automobile |
| CN201994848U (en) * | 2011-03-22 | 2011-09-28 | 安徽华东光电技术研究所 | DC-DC (direct current-direct current) power module circuit |
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| C06 | Publication | ||
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| ASS | Succession or assignment of patent right |
Owner name: SHENZHEN BOYONG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: DONGGUAN BOYONG TECHNOLOGY CO., LTD. Effective date: 20150604 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20150604 Address after: 518054 Guangdong city of Shenzhen province Qianhai Shenzhen Hong Kong cooperation zone before Bay Road No. 1 building 201 room A (located in Shenzhen Qianhai business secretary Co. Ltd.) Applicant after: SHENZHEN BOYONG TECHNOLOGY CO., LTD. Address before: 523808 Guangdong province Dongguan City Songshan Lake Industrial Road, building 6 floor 2 Songhu branch Applicant before: Dongguan Boyong Electronic Technology Co., Ltd. |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140625 |