CN103887308B - Super barrier rectifier of integrated schottky diode and preparation method thereof - Google Patents
Super barrier rectifier of integrated schottky diode and preparation method thereof Download PDFInfo
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- CN103887308B CN103887308B CN201410083539.8A CN201410083539A CN103887308B CN 103887308 B CN103887308 B CN 103887308B CN 201410083539 A CN201410083539 A CN 201410083539A CN 103887308 B CN103887308 B CN 103887308B
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Abstract
The invention mainly relates to power semiconductor commutator, more precisely, relate to the super barrier rectifier of a kind of integrated schottky diode and preparation method thereof.Prepare the SBR device of plough groove type, there is the body diode in parallel with metal-oxide-semiconductor and Schottky diode, the threshold voltage of barrier MOS pipe is lower than the barrier voltage of conventional PN junction, the voltage of SBR forward conduction is less than the forward conduction voltage of regular PN diode, make SBR have a switching speed faster, and have higher the most pressure.
Description
Technical field
The invention mainly relates to power semiconductor commutator, more precisely, be a kind of super barrier rectifier of design and offer system
The optimization method of standby super barrier rectifier, is integrated with integrated schottky diode.
Background technology
So far, power semiconductor commutator is widely used among power supply switching and power inverter, such as, and some existing skills
Art discloses the super barrier rectifier (Super Barrier Rectifier, SBR) of all multiple types, between the anode and cathode
Integrate commutation diode in parallel and MOS transistor forms super barrier rectifier SBR.Typical such as Chinese patent Shen
Please disclose " manufacturing power rectifier device to change improved method and the device of gained of running parameter " by 01143693.X,
And for example U.S. Patent application US6331455B1 discloses one " power rectifier and manufacture method thereof " etc., these literary compositions
Offer solution and the preparation method describing the SBR common commutator of replacement in detail.But the problem being currently needed for solving is
Improve MOS transistor structure cell density and optimize preparation technology with manufacturing property parameter more preferably, commutator that cost is lower,
Especially require to keep forward fast conducting and higher reverse recovery time, and reverse leakage current to be ensured is little, it is known that skill
Art yet suffers from many weak points overcoming in these difficult problems.
On the other hand, it is potential barrier of heterogenous junction based on Schottky barrier rectifier, there is electric conduction and force down, switch switching rapidly etc.
Advantage, also tries to integrate Schottky diode, but thing followed leakage current and backward power consumes in some MOS device
Dissipate etc problem, cause reliability to reduce, make troubles to designer.Leakage current shows the most when temperature raises
Substantially, leakage current is easily caused drastically to raise because temperature raises.Even if so some MOS device deliberately introducing Xiao
Special based diode, but cannot substance apply in high accuracy commutator because suppressing reverse leakage current.
Summary of the invention
In one embodiment, the present invention provides the SBR of a kind of integrated schottky diode, including: a bottom lining
The end and the epitaxial layer above it, be formed with a body layer, and be formed with a top at body layer top at the top of epitaxial layer
Portion's doped layer；Form active groove in the epitaxial layer, downward through top doped layer and body layer until extending to bottom it
In epitaxial layer below body layer, it is lined with pad oxide with sidewall and in active groove, is provided with grid bottom active groove
Pole；Run through the top doped layer between neighboring active groove and body layer until extending downward in the epitaxial layer below body layer
Through hole；The body contact region being implanted in body layer and be centered around around through-hole side wall and be implanted in epitaxial layer below via bottoms
Interior doped region；Schottky contacts is formed between the metal plug being filled in through hole, thromboembolism and epitaxial layer and doped region；Cover
Cover on epitaxial layer and keep an anode metal layer in electrical contact with top doped layer, thromboembolism, and being arranged on bottom lining
A cathode metal layer on bottom surface, the end.
Above-mentioned SBR, the top of the grid in active groove is protruding upward in the end face of epitaxial layer, and gate top exceeds extension
Being partly embedded in anode metal layer of layer end face.
Above-mentioned SBR, SBR, under reverse bias condition, are positioned at the extension near the part below body layer at active groove
Form depletion region, and the depletion region formed in the interface of body layer with epitaxial layer in Ceng, take this shield diode and Xiao Te
Based diode is to reduce reverse leakage current.
In another embodiment, the SBR of a kind of integrated schottky diode, above: base substrate and its
An epitaxial layer, be formed with a body layer at the top of epitaxial layer, and be formed with a top doped layer at body layer top；
Form an annular isolation groove in the epitaxial layer, and the active groove being formed in the active area inside isolated groove, and shape
Become the termination groove in the termination environment outside isolated groove；Active groove, isolated groove and termination groove, all downward through
Top doped layer and body layer are until bottom extends in the epitaxial layer below body layer, at the bottom of each of which and sidewall all
It is lined with pad oxide, and in active groove, isolated groove, is provided with grid and is provided with floating grid in termination groove
Pole；Being formed between neighboring active groove and be formed at the through hole between isolated groove and its neighbouring active groove, through hole passes through
Wear top doped layer and body layer until extending downward in the epitaxial layer below body layer；It is implanted in body layer and is centered around
Body contact region around through-hole side wall and the doped region being implanted in below via bottoms in epitaxial layer；The gold being filled in through hole
Belong to thromboembolism, between thromboembolism and epitaxial layer and doped region, form Schottky contacts；Cover on epitaxial layer and with top doped layer,
Thromboembolism keeps an anode metal layer in electrical contact, and the cathode metal layer being arranged on base substrate bottom surface.
Above-mentioned SBR, the respective top of floating grid in grid in active groove and isolated groove, termination groove all to
Epirelief is for top being partially submerged into beyond epitaxial layer end face of the grid in the end face of epitaxial layer, active groove and isolated groove
In anode metal layer, floating grid insulate with anode metal layer.
Above-mentioned SBR, the peripheral part of the anode metal layer of active region covers the grid in isolated groove near active
On the top of the inboard portion in district, the grid in isolated groove is the most positive near the over top of the Outboard Sections of termination environment
Pole metal level covers.
Above-mentioned SBR, when SBR reverse bias, the part being positioned at below body layer at active groove, isolated groove is attached
Near epitaxial layer is formed depletion layer, and forms depletion layer in the body layer of active area and the interface of epitaxial layer, take this shielding
Body diode and Schottky diode are to reduce reverse leakage current.
In a kind of method of SBR preparing and being integrated with Schottky diode, comprise the following steps: step S1, offer
Comprise base substrate and the Semiconductor substrate of an epitaxial layer above it, utilize cover above epitaxial layer with patterns of openings
A mask, etch multiple active groove in the epitaxial layer；Step S2, generate lining at the bottom of active groove and sidewall
Pad oxide, then form grid in active groove, remove mask afterwards, makes grid have protruding upward in epitaxial layer
The tip portion of end face；Step S3, in the way of without extra mask, implant alloy at the top of epitaxial layer and form one
Body layer, implants alloy the most again and forms a top doped layer at the top of body layer；Step S4, at the end face of epitaxial layer
With prepare an insulation oxide layer above grid, gate top is covered by insulant beyond the sidewall of part of epitaxial layer end face
Lid；Step S5, return carve insulation oxide layer, formed be attached to gate top beyond epitaxial layer end face part sidewall on
Side wall, and the region that the upper surface exposing top doped layer is not covered by side wall；Step S6, with without extra mask
Mode, performs following steps: respectively only using side wall as Self-aligned etching mask, etches and runs through top doped layer downwards
Extend to the through hole of tool first degree of depth in body layer；Body layer around the via bottoms of tool first degree of depth is implanted body
Contact area；Only using side wall as Self-aligned etching mask, continue etching body layer and body layer along the through hole having first degree of depth
The epitaxial layer of lower section, forms the through hole of tool second degree of depth extended downward in the epitaxial layer below body layer；Deep at tool second
The bottom of the through hole of degree is implanted alloy and is formed a doped region, and removes side wall；Step S7, formed with outer in through hole
Prolong layer, doped region constitutes the thromboembolism of Schottky contacts and deposits an anode metal layer on epitaxial layer, and gate top is upwards
Part beyond epitaxial layer end face is covered by described anode metal layer.
Said method, in step sl, while forming active groove, also utilizes mask to etch one in the epitaxial layer
Annular isolation groove and multiple termination groove, active groove and termination groove are respectively formed at the active area of the inner side of isolated groove
In termination environment outside neutralization.
Said method, in step s 2, after forming pad oxide, further comprising the steps of: to deposit on mask
It is filled with conductive material in conductive material, opening in mask and active groove, isolated groove and termination groove, then removes
Conductive material above mask；Wherein in active groove and mask, the conductive material in overlapping opening above it is formed active
Grid in groove；In isolated groove and mask, the conductive material in overlapping opening above it forms the grid in isolated groove
Pole；Floating grid in the conductive material in overlapping opening above it forms termination groove in termination groove and mask；It
After remove described mask again.
Said method, in the step s 7, first deposits a metal level on the epitaxial layer of active area and termination environment, then carves
The metal level of eating away termination environment only remains with the metal level of source region, be retained in active area metal level peripheral part cover every
From groove inner grid on the top of the inboard portion of active area, as an anode metal layer, isolated groove inner grid leans on
The metal level of the over top of the Outboard Sections of nearly termination environment is etched away in the lump together with the metal level of termination environment.
Said method, in step S2, before removing described mask, first shape on grid, the respective top end face of floating grid
Become monoxide pad；And in step s 4, oxide spacer is covered by described insulation oxide layer；And in step
In rapid S5, return and carve grid, floating grid each top insulation oxide layer and the composite bed of oxide spacer, formed and retain
Grid, floating grid each above a screen oxide, thus utilize screen oxide and side wall to make in step s 6
Through hole is formed for etch mask.
Said method, adjusts the distance between adjacent end groove and adjusts a terminal trenches near isolated groove and isolation
Distance between groove；Control adjacent floating grid and each protrude from the gap width between the tip portion of epitaxial layer end face,
With tip portion and the isolation that the floating grid in the terminal trenches controlling neighbouring isolated groove protrudes from epitaxial layer end face
Groove inner grid protrudes from the gap width between the tip portion of epitaxial layer end face；Ensure that insulation oxide layer is filled in described
Part in gap in step s 5 will not by completely by return quarter fallen so that the upper surface of the top doped layer of active area not by
Region that side wall covers exposed out but prevent the upper surface of the top doped layer of termination environment exposed out.
Accompanying drawing explanation
Reading described further below and with reference to after the following drawings, inventive feature and advantage will be apparent to:
Figure 1A is the cross-sectional view of the integrated SBD of SBR of the present invention.
Figure 1B is the electrical block diagram of SBR device in Figure 1A.
Fig. 2 A～2N is the process flow diagram of the SBR preparing Figure 1A and 1B.
Detailed description of the invention
See Figure 1A, illustrate the super barrier being integrated with Schottky diode (Schottky Barrier Diode, SBD)
The profile of commutator SBR.One Semiconductor substrate comprises a base substrate 101 and is carried in base substrate 101
One epitaxial layer 102 of side, is formed with one layer of body layer 103 at the top of epitaxial layer 102, and in body layer 103
Top is formed with one layer of top doped layer 104.The end face of epitaxial layer 102 is Semiconductor substrate or the front claiming wafer, the end
The bottom surface of portion's substrate 101 is a back side with vis-a-vis.In the present invention, top doped layer 104 can define again
For source/drain top doped layer.For the convenience described, setting base substrate 101 is heavily doped N+ type, epitaxial layer 102
Doping content be N-type less than base substrate, body layer 103 be p-type and top doped layer 104 is that doping content is higher
N+ type.
SBR also includes being arranged on epitaxial layer 103 and keeps sun in electrical contact with the upper surface of top doped layer 104
Pole metal level 105, and include being arranged on the bottom surface of base substrate 101 cathode metal layer 205 sputtering or depositing.Sun
Pole metal level 105 can draw an anode tap A(Anode of SBR), permissible on the bottom surface of base substrate 101
Draw a cathode terminal C(Cathode).The side circuit that the structure of Figure 1A is embodied the most as shown in Figure 1B, is only shown
One individual diodes unit (Body diode, BD), Schottky diode cell S BD and a MOSFET
Unit is as demonstration.Between anode tap A and cathode terminal C paralleling MOS FET150 and body diode (BD) 151,
Schottky diode (SBD) 152, the respective anode of BD151, SBD152 and negative electrode be connected to anode tap A and
On cathode terminal C.The most integrated SBD152 is when SBR forward conduction, it is possible to decrease the forward conduction electricity of whole SBR
Pressure, one of splendid advantage showed is to greatly reduce power attenuation.
In figure ia, active groove 106 is formed in epitaxial layer 102, and active groove 106 is downward through top
Doped layer 104 and body layer 103, until the bottom of active groove 106 extends to the epitaxial layer 102 below body layer 103
In, top doped layer 104 is centered around around the relatively top of active groove 106.Bottom and side at active groove 106
Wall is lined with pad oxide 106a, as grid oxic horizon, is formed with grid 116a in active groove 106.?
In some alternative embodiments, the top end face of grid 116a can be with the end face of epitaxial layer 102 namely top doped layer 104
Upper surface the most coplanar, the most slightly below end face of epitaxial layer 102；But in some preferred embodiments, grid 106
Top upwardly extend, until it has the tip portion of the end face protruding from epitaxial layer 102, and be embedded in anode metal
In layer 105.In mesa structure (Mesa) between neighboring active groove, the most adjacent top between active groove 106
In portion's doped layer 104 and body layer 103, being provided with through hole 107, through hole 107 runs through top doped layer 104, body
Layer 103 also extends downward in the epitaxial layer 102 below body layer 103.
It addition, be injected with the body contact region 108 of heavy doping P+ type in body layer 103, body contact region 108 around
The lateral wall circumference of the part of body layer 103 it is positioned at through hole 107.And the extension of the near-bottom at through hole 107
Being injected with the doped region 109 of a heavy doping N+ type in layer 102, wherein, the doping content changing doped region 109 can be micro-
The forward conduction voltage drop of regulation SBD.The thromboembolism 105a comprising schottky metal, thromboembolism 105a it is provided with in through hole 107
The epitaxial layer 102 of contact through hole 107 bottom periphery, doped region 109, and with this portion of epi layer 102, doped region 109
Between form Schottky contacts, simultaneously can take this to reduce the conduction impedance of whole device.In some embodiments, through hole
Bottom 107 and sidewall is attached with the schottky barrier metal layer of layer (such as noble metal gold, silver, platinum, titanium, nickel, molybdenum
Deng), it is collectively forming metal with schottky barrier metal layer in then a part for anode metal layer 105 is filled in through hole 107
Thromboembolism 105a, the metal material being filled in through hole 107 is one-body molded with anode metal layer 105.Other embodiment party
In formula, bottom through hole 107 and sidewall is attached with the schottky barrier metal layer of layer, and it is filled in through hole 107
Metal material not concurrently form with anode metal layer 105, or there is different materials, the most first fill the gold such as tungsten
Belong to material in through hole 107, the most just prepare anode metal layer 105, now metal plug 105a by barrier metal layer and
The metal material composition being filled in through hole 107, but metal plug 105a and anode metal layer 105 remain in that electricity
Property connect.Epitaxial layer 102 and base substrate 101 below body layer 103 can be defined as Lou again/source bottom doped layer,
In MOSFET unit, corresponding with aforementioned source/drain top doped layer 104.
In SBR device, base substrate 101, epitaxial layer 102, top doped layer 104 and doped region 109 are N-type,
Body layer 103 and body contact region 108 are p-type, and the doping content of body contact region 108 is far above body layer 103,
The doping content of doped region 109 is more than epitaxial layer 102.It addition, according to shown in Figure 1A, top doped layer 104, body layer
Npn bipolar transistor BJT parasitic between 103 and epitaxial layer 102 is shorted, and largely eliminate or reduces
The probability of parasitic BJT in SBR.
Rectification based on SBR, SBR is not only operated in forward conduction, the most also operates in reverse biased work section and needs
Reverse biased to be born, and the size of the pressure degree of the SBR under reverse bias condition and leakage current value is to examine its performance
Important parameter.One of important spirit of the present invention is that, during reverse bias SBR, and the height of opposing cathode end C
For current potential, grid 116a is in low-potential state, and active groove 106 has the part being positioned at below body layer 103,
Epitaxial layer 102 near its this part forms depletion region, meanwhile, also on the boundary of body layer 103 with epitaxial layer 102
Depletion region is formed at face, by these depletion regions, can most shield diode BD151 and Schottky two pole
Pipe SBD152, to reduce reverse leakage current, suppresses leaky, to realize increasing substantially reverse voltage endurance capability, and
And BD151, SBD152 are continued to increase backward voltage by shielding no longer worry cathode terminal C and can cause damage it, promote
Breakdown reverse voltage.According to one aspect of the present invention, as long as the degree of depth of through hole 107 is less than the deep of active groove 106
Degree or roughly the same, reduces the distance between adjacent pair active groove 106 simultaneously, make SBR under reverse bias condition,
In adjacent pair active groove 106, a groove is positioned near part 106-1 below body layer 103 at it
Forming a depletion region in epitaxial layer 102, another groove is positioned near part 106-2 below body layer 103 at it
Epitaxial layer 102 in form another depletion region, the two depletion region mutually extends into and intersects and merge, then enters one
Step merges the depletion region of 106 body layer of this pair active groove 103 and epitaxial layer 102 interface, just can be adjacent by this
Drain current path pinch off between a pair active groove 106, the present invention the most almost can block reverse leakage completely
Flow path, thus provide prior art unrivaled ultra-high breakdown reverse voltage.
Fig. 2 A～2N is to prepare the method flow diagram of SBR in Figure 1A.Fig. 2 A～2B, extension in base substrate 101
Growth has an epitaxial layer 102, the follow-up end face at epitaxial layer 102 to be coated with an extra hard mask 200, should
It is various that the material of mask 200 selects, and can be single layer structure or composite bed, and composite bed such as comprises oxide skin(coating) and oxygen
Silicon nitride above compound layer.In fig. 2b, the first unshowned photoresist of spin coating above mask 200, by photoetching work
Skill makes the channel patterns on mask 200, after forming the opening figure with channel patterns, removes in mask 200
Photoresist, owing to these technology have been well known to those of ordinary skill in the art, so the present invention repeats no more.
Such as Fig. 2 C, etching epitaxial layer 102, forms groove expected from several, including active ditch in an anisotropic way
Groove 106, isolated groove 106' and termination groove 106'', Semiconductor substrate is isolated groove 106' and is divided into and is positioned at isolation
Active area inside groove 106' 131 and be positioned at the termination environment 130 outside it.Wherein isolated groove 106' and each termination
Groove 106'' is all the ring-shaped groove of Guan Bi, and active groove 106 and termination groove 106'' are respectively formed at isolated groove
In the active area 131 of the inner side of 106' and the termination environment 130 in outside.In certain embodiments, available isotropic
Etching mode forms the bottom of each groove, to improve the round and smooth degree at its bottom corners, is etched to close to fillet.
In certain embodiments, in order to provide smooth surface to each groove the trench bottom corner that forms corners, groove table is reduced
The physical damnification in face and defect, can be first at active groove 106, isolated groove 106' and the termination groove 106'' respective end
Portion and one layer of sacrificial oxide layer (not illustrating) of sidewall growth, sacrificial oxide layer is a transition zone, can use wet method afterwards
Mode erode sacrificial oxide layer.Then generate and cover at active groove 106, isolated groove 106' and termination groove
The respective sidewall of 106'' and pad oxide 106a of bottom, pad oxide 106a needs to bear a certain degree of high
Pressure, generally requiring is the preferable thin film of compactness, wherein the pad oxide in active groove 106, isolated groove 106'
106a is also as grid oxygen.Notice that pad oxide 106a uses SiO2 to be merely possible to demonstration, liner oxidation in fact here
Thing 106a can also utilize the insulation film of the preferable silicon nitride of quality etc to substitute.The width of isolated groove 106' is general
Will be much broader than active groove 106 and termination groove 106'', and in some embodiment, active groove 106 compares
Groove 106'' is the widest or the narrowest all may be used for termination.
See Fig. 2 D, conductive material such as polysilicon 116 is deposited on mask 200, also fills up at active groove simultaneously
106, in isolated groove 106' and termination groove 106'', also by crystal silicon 116 in each opening 200a in mask 200
Filled, doping can be performed in polysilicon 116, adulterate in situ or first deposit and adulterate afterwards.Afterwards, need to remove
Fall to be positioned at the polysilicon 116 above mask 200 and only retain and be positioned at each groove 106,106', 106'' and each
Polysilicon 116 in individual opening 200a, typical as implemented to grind (such as CMP) or dry etchback to polysilicon 116
?.If preferably eat-back, etching terminal is the upper surface of mask 200, sometimes there is over etching, can cause each
The top end face of the polysilicon 116 in individual opening 200a caves in slightly downward from the upper surface of mask 200.Through polysilicon 116
Grinding/eat-back after, in groove and in mask for etching prepare groove opening in the polysilicon filled be retained.Make
The polysilicon 116 filled in obtaining active groove 106 and mask 200 overlap on the opening directly over active groove 106
The polysilicon 116 filled in 200a forms a grid 116a.Equally, the polysilicon 116 filled in isolated groove 106'
Grid are formed with the polysilicon 116 filled in the opening 200a overlapped in mask 200 directly over isolated groove 106'
Pole 116b.And, the polysilicon 116 filled in termination groove 106'' and mask 200 overlap on termination groove 106''
The polysilicon 116 filled in the opening 200a of surface forms a floating grid 116c, as shown in Figure 2 E.
In the embodiment that some are optional but nonessential, in the etching technics being subsequently formed through hole 107, in order to ensure out
The polysilicon 116 filled in mouth 200a is not fallen by over etching, in addition it is also necessary at the polysilicon 116 removed above mask 200
Afterwards, but before removing mask 200, then perform the step of oxidation step, i.e. at grid 116a, 116b and floating grid
Form one layer of oxide spacer 206 on the respective top end face of pole 116c, peel off mask 200 the most again.It may be noted that oxygen
Compound pad 206 is not necessary, if the tip portion that each grid protrudes from top doped layer upper surface has foot
Enough height (as long as namely mask 200 sufficiently thick), in the preparation technology of through hole 107, just can ensure each grid or
The tip portion that floating grid protrudes will not be etched away completely, and the now preparation of oxide spacer 206 can be omitted completely
Fall, and directly lift-off mask 200.
In fig. 2f, utilize such as the corrosive liquid of H3PO4, erode mask 200, make grid 116a, 116b and float
Put grid 116c and each there is the tip portion of the end face in epitaxial layer 102 protruding upward, it is readily appreciated that each of which
Tip portion namely be originally filled in the polysilicon in corresponding opening 200a respectively.
Such as Fig. 2 G, do not utilize any extra mask, first at the dopant ion of top implanting p-type of epitaxial layer 102 and move back
Fire process forms a body layer 103, and the body layer 103 after activation is centered around the week of active groove 106 relatively upper portion side wall
Enclosing, the bottom of active groove 106 extends downwardly in the epitaxial layer 102 below body layer 103.The most again in body layer
Heavily doped n-type doping ion is implanted at the top of 103, forms the top doped layer 104 that a degree of depth is shallower, and anneals
DIFFUSION TREATMENT, top doped layer 104 is centered around around the relatively upper portion side wall of active groove 106.Without additionally injecting mask
Result be that the p-type dopant ion of body layer 103 is infused in the whole top of epitaxial layer 102 rather than the local at its top
Region, the n-type doping ion implanting of top doped layer 104 is in the whole top of body layer 103 rather than the local at its top
Region, body layer 103, top doped layer 104 are formed at active area 131 and termination environment 130.
Such as Fig. 2 H, the top face at epitaxial layer 102 deposits an insulation oxide layer 207, insulation oxide layer 207
Cover above grid 116a, 116b and floating grid 116c equally.Each grid 116a, 116b, 116c exceed
The sidewall of the tip portion of epitaxial layer 102 end face is also covered by insulation oxide layer 207, and this is in follow-up autoregistration work
In skill particularly important.If there is oxide spacer 206, then insulation oxide layer 207 also cover grid 116a, 116b,
Above oxide spacer 206 above 116c each top end face.Without oxide spacer 206, then insulation oxide
Layer 20 directly overlays on grid 116a, 116b, 116c each top end face.
As shown in figure 2i, carry out the most unidirectional being etched back to, return and carve insulation oxide layer 207, in certain embodiments,
The oxide spacer 206 of the superposition of grid 116a, 116b and floating grid 116c each over top and insulation oxide
The composite bed of layer 207 is also etched back to.In this step, cover vertically side, the edge on the sidewall of each gate top part
It is retained when to the insulation oxide layer 207 arranging/extending, is formed and be attached to grid 116a, 116b and floating grid
Side wall 207a on the sidewall of each tip portion of 116c.In active area 131, at the upper surface of top doped layer 104,
In addition to the region covered by side wall 207a, the horizontally extending/setting covered above other remaining region
Insulation oxide layer 207 is etched away, thus in active area 131, after completing to be etched back to, top doped layer 104
Upper surface other remaining regions in addition to the region covered by side wall 207a are exposed, and this is that vertical unipolarity is returned
The effect that the characteristic of etching is brought, and prepare for follow-up Self-aligned etching.
After deposition insulation oxide layer 207, the oxide spacer 206 originally existed on each grid so that each
The one-tenth-value thickness 1/10 of the composite bed of oxide spacer 206 and insulation oxide layer 207 is incorporated, than active area 131 on grid
The single one-tenth-value thickness 1/10 of the insulation oxide layer 207 that middle top doped layer 104 upper surface extends horizontally over wants big one
A bit.This difference in thickness creates some effects: horizontally disposed exhausted above top doped layer 104 upper surface
Edge oxide skin(coating) 207 is etched away, only reservation side wall 207a, but each grid 116a, 116b and floating grid 116c
Top end face the most also will not exposed out because the composite bed of oxide spacer 206 and insulation oxide layer 207 is carved
The insulation that in the one-tenth-value thickness 1/10 of the part of eating away, with active area 131, top doped layer 104 upper surface is horizontally extending
The one-tenth-value thickness 1/10 of oxide skin(coating) 207 is roughly the same, and the end face that etching terminal is epitaxial layer 102 or top doped layer 104
Upper surface, so can remain with one layer of screen oxide 207b on the top end face of each grid.
An aspect of of the present present invention, needs to regulate in termination environment 130 and terminates the distance between groove 106'', and regulation is leaned on most
Distance between one termination groove 106'' and isolated groove 106' of nearly isolated groove 106', and need to regulate active
Distance between active groove 106 in district 130, and need regulation near the active groove 106 of isolated groove 106'
And the distance between isolated groove 106'.The gap between the tip portion of adjacent pair grid 116a is made to have width
Degree W1, has near the gap between tip portion and the tip portion of grid 116b of the grid 116a of grid 116b
Width W2, the gap between the tip portion of adjacent pair floating grid 116c has width W3, near grid
Gap between tip portion and the tip portion of grid 116b of one floating grid 116c of 116b has width W4,
W1 and W2 is all much broader than W3 and W4.
W4 and W3 regulation is to make the gap between adjacent floating grid 116c tip portion almost to narrow result
Filled up by a part for insulation oxide layer 207, make the top ends of a floating grid 116c near grid 116b
The gap between the tip portion of grid 116b is divided the most almost to be filled up by insulation oxide layer 207.It will be apparent that insulation oxygen
The one-tenth-value thickness 1/10 of the part that compound layer 207 is filled in during width is the gap of W3 in termination environment 130, or it is filled in width
For the one-tenth-value thickness 1/10 of the part in the gap of W4, than top doped layer 104 upper surface in active area 131 in the horizontal direction
The insulation oxide layer 207(extended is positioned in the gap that width is W1, W2) one-tenth-value thickness 1/10 much greater, so absolutely
Edge oxide skin(coating) 207 be etched back to terminate after, active area 131 width be W1, W2 gap in prolong in the horizontal direction
The insulation oxide layer 207 stretched is etched away, but in termination environment 130 width be W3, W4 gap in still remain with
A part for insulation oxide layer 207, is etched back the most completely.As shown in figure 2i, the top doped layer of termination environment 130
The upper surface of 104 will not exposed out.This structure of Fig. 2 I, it is believed that be: the filling of insulation oxide layer 207 class
The thickness that thing is filled in the gap that breadth depth ratio is different also can difference.Or think in the gap that width is W3, W4, often
Two the side wall 207a formed on the inwall of the both sides in individual gap inwardly toward each other, the bottom of one of which and another one
Bottom directly intersect and merge, and cause the thickness increase of the insulation oxide layer 207 filled in this gap, W3, W4
Value the least, the one-tenth-value thickness 1/10 of gap inner stuffing is the biggest.
Such as Fig. 2 J, utilize screen oxide 207b and side wall 207a as the mask of etching, and without extra mask,
Carry out the first step etching technics of through hole 107 in a self-aligned manner.In active area 131, adjacent active groove 106
Between epitaxial layer 102 in be etched and define multiple through hole 107, near active groove 106 He of isolated groove 106'
In epitaxial layer 102 between isolated groove 106', also etching defines through hole 107, through hole 107 mainly exposed out
Epitaxial layer 102 upper surface at formed, now through hole 107 runs through top doped layer 104 and extends downward body layer 103
In, and there is first degree of depth D1.Note, without preparing oxide spacer 206, exhausted above each gate top
The one-tenth-value thickness 1/10 of edge oxide skin(coating) 207, with active area 131 epitaxial layers 102 top face along horizontal direction extend exhausted
The one-tenth-value thickness 1/10 of edge oxide skin(coating) 207 is more or less the same, then after the eat-back of insulation oxide layer 207, it is impossible to form shielding
Oxide layer 207b, the top end face of the tip portion of grid 116a, 116b and floating grid 116c can exposed out, thus
In the preparation process of through hole 107, top ends branch is directly etched away a part or etches away completely, but the most at this moment
Side wall 207a is complete preparation, does not interferes with the side wall 207a autoregistration mask function as etching, is also to allow.
In further embodiments, the tip portion that can set each grid protrusion has enough height (as long as mask 200 is sufficient
Enough thickness), then grid, that the tip portion of floating grid loses a part in the step preparing through hole 107 is the most not severe,
Because remaining part remains able in electrical contact with follow-up anode metal layer 105, oxide spacer 206 is not
It is necessary.
Top based on termination environment 130 doped layer 104 is the most exposed out, so while perform a step etching technics,
In active area 131, form through hole 107, but termination environment 130 will not be formed through hole 107.
As Fig. 2 K, the injection mask that can not illustrate with Selection utilization, or selection do not utilize any injection shield mask,
The body contact region of P+ type can be implanted in the body layer 103 of the near-bottom of the through hole 107 of tool first degree of depth D1
108, and perform high annealing to activate body contact region 108, the doping content of body contact region 108 is more than body layer
The concentration of 103.In ion implanting step, because the shielding action of side wall 207a, alloy will not be injected into side wall 207a
In the top doped layer 104 of underface or body layer 103, one can be saved and inject mask.
Such as Fig. 2 L, continue with screen oxide 207b and the side wall 207a mask as etching, it is not necessary to extra mask,
Carry out the second step etching technics of through hole 107 in a self-aligned manner.Body layer in the through hole 107 of first degree of depth D1
103 is exposed, and after performing another vertical isotropic etching, the degree of depth of through hole 107 will increase.Now
Epitaxial layer 102 below etching body layer 103 and body layer 103, until etching stopping is in epitaxial layer 102, is formed
Have the through hole 107, D2 of second degree of depth D2 > D1, it extends downward bottom and is positioned at the epitaxial layer below body layer 103
In 102.Epitaxial layer 102 at the bottom part down of the through hole 107 of second degree of depth D2 is implanted into ion afterwards, forms D2
The doped region 109 of through hole 107 near-bottom of the degree of depth diffusion activation, this is ion implanted in step and preferably need not utilize
Any injection shield mask, naturally it is also possible to the injection mask that Selection utilization does not illustrates is as injecting shielding.
In one embodiment, ion implanting, ion implanting are carried out in an inclined manner when implanting body contact region 108
Direction or the center between centers angle of path and wafer be not that 0(orthogonality of center shaft is in the plane at wafer place), such as exist
Between 0～90 °, in order to contact area 108 is not made only in the underface of the through hole 107 of the D1 degree of depth, is also formed in its side
Around wall, thus in the etch step of through hole 107 being subsequently formed the D2 degree of depth, contact area 108 is positioned at the D1 degree of depth and leads to
Part immediately below bottom hole 107 is etched away, but contact area 108 is looped around through hole 107 sidewall of the D1 degree of depth originally
Part around is retained when, and is presented as in Fig. 2 L the contact area 108 retained.In one embodiment, mix in implantation
Carrying out ion implanting during miscellaneous district 109 in vertical manner, the direction of ion implanting is perpendicular to the plane at wafer place.
Then wet etching is utilized to remove side wall 207a and screen oxide 207b, if not preparation in some embodiments
Screen oxide 207b, as long as then removing side wall 207a, makes each grid 116a, 116b and floating grid 116c
The top end face of tip portion and sidewall the most exposed out.
As shown in figure 2m, first depositing a metal level on the epitaxial layer 102 of active area 131 and termination environment 130 (should
Step is the most individually listed), then etch away the metal level of termination environment 130, and only remain with the metal level of source region 131.
Being retained in the metal level of active area 180, its peripheral part covers on the top of grid 116b, but does not extend to end
Petiolarea 130, as an anode metal layer 105.After this, as shown in figure 2n, a redeposited passivation layer 115,
Passivation layer 115 usually comprises low temperature oxide layer and borated silica glass layer (BPSG), covers in termination environment 130
The upper surface of top doped layer 104 and floating grid 116c above, by floating grid 116c tip portion cladding
In passivation layer 115, passivation layer 115 the most also covers above whole anode metal layer 105, subsequently to major general's anode
A part of passivation layer 115 above metal level 105 etches away, and exposes table in anode metal layer 105 from passivation layer 115
The regional area in face.Hereafter, execution metallization it is additionally included on base substrate 101 bottom surface to form cathode metal layer (not
Illustrate) step.
In certain embodiments, cover schottky barrier metal layer in the sidewall of through hole 107 and the bottom of the tool D2 degree of depth, when
When through hole 107 has wider size, on epitaxial layer 102, a part for the metal level of deposition can directly be filled in
In through hole 107, i.e. packing material in through hole 107 and anode metal layer 105 is integrally formed, and material is identical.
In other embodiments, cover schottky barrier metal layer in the sidewall of through hole 107 and the bottom of the tool D2 degree of depth, but logical
In hole 107, first filler metal material (such as tungsten) forms thromboembolism (interconnection structure) 105a, and metal material covers toward contact
Above epitaxial layer 102 and each grid, these unwanted metal materials eat-back above epitaxial layer 102 and grid is moved
Remove, only retain the filler metal of the through hole 107 being positioned at the D2 degree of depth, mix at thromboembolism 105a and top the most again
Deposit a metal level on diamicton 104 and each grid, and its etching is formed anode metal layer 105.
With reference to Figure 1B, Fig. 2 N.When applying forward voltage between anode tap A and cathode terminal C, vertical MOSFET in parallel
Grid drain electrode short circuit be in same high potential, form channel inversion layer, MOSFET structure cell is opened immediately.Schottky two
Pole pipe, when SBR forward conduction, can obviously reduce the forward conduction voltage of whole SBR, solves power problems.Once
Applying backward voltage between anode tap A and cathode terminal C, gate-source is in same electronegative potential, and each MOSFET is brilliant
Born of the same parents end, and the body diode being connected in parallel on metal-oxide-semiconductor and Schottky diode need to carry reverse biased, and reverse leakage current is by body
Characteristic between PN junction or barrier metal and N quasiconductor determines.
During reverse bias SBR, it is positioned near the part below body layer 103 at active groove 106, isolated groove 106'
Epitaxial layer 102 in form depletion region, and formed with the interface of epitaxial layer 102 in the body layer 103 of active area 131
Depletion region, by these depletion regions, can be with shield diode BD151 and Schottky diode SBD152.It addition,
Adjustable reduces the distance between adjacent pair active groove 106, and reduces the active groove of closest isolated groove 106'
Distance between 106 and isolated groove 106'.Make SBR under reverse bias condition, at adjacent pair active groove
In 106, one of which is positioned at the depletion region formed in the epitaxial layer 102 near the part below body layer 103, with
Another one is positioned at another depletion region formed in the epitaxial layer 102 near the part below body layer 103 and intersects and merge
Together, then merge the depletion region of 106 body layer of this pair active groove 103 and epitaxial layer 102 interface, just may be used
By the drain current path pinch off between this adjacent pair active groove 106.And, active near isolated groove 106'
Groove 106, it is positioned at the depletion region formed in the epitaxial layer 102 near the part below body layer 103, with isolation
Groove 106' is positioned at another depletion region formed in the epitaxial layer 102 near the part below body layer 103, blends mutually
It is combined, then merges the body layer between the active groove 106 and isolated groove 106' of isolated groove 106'
103 with the depletion region of epitaxial layer 102 interface, active groove 106 and the isolated groove of isolated groove 106' can be will be close to
Drain current path pinch off between 106'.So SBR has splendid reverse voltage endurance capability.
It addition, grid 116a, 116b have a tip portion protruding from top doped layer 104 upper surface, tip portion with
Anode metal layer 105 has bigger contact area and less ohmic contact resistance, when applying forward voltage drop, can carry
Rise grid 116a, 116b and extract the speed of carrier formation inversion layer, the body two in parallel with metal-oxide-semiconductor from body layer 103
Pole pipe PN junction or Schottky diode this process that metal-oxide-semiconductor just has been turned on before opening are further accelerated,
SBR forward switch conversion speed is strengthened.
Above, by explanation and accompanying drawing, giving the exemplary embodiments of the ad hoc structure of detailed description of the invention, foregoing invention carries
Go out existing preferred embodiment, but these contents have been not intended as limitation.For a person skilled in the art, in reading
State bright after, various changes and modifications will be apparent to undoubtedly.Therefore, appending claims should be regarded as and contains this
Bright true intention and whole variations and modifications of scope.In Claims scope, the scope of any and all equivalence is with interior
Hold, be all considered as still belonging to the intent and scope of the invention.
Claims (11)
1. the SBR of an integrated schottky diode, it is characterised in that including:
One base substrate and the epitaxial layer above it, be formed with a body layer at the top of epitaxial layer, and on body layer top
Portion is formed with a top doped layer；
Form active groove in the epitaxial layer, downward through top doped layer and body layer until extending to body layer bottom it
In the epitaxial layer of lower section, it is lined with pad oxide with sidewall and in active groove, is provided with grid bottom active groove；
Run through the top doped layer between neighboring active groove and body layer until extending downward in the epitaxial layer below body layer
Through hole；
The body contact region being implanted in body layer and be centered around around through-hole side wall and be implanted in epitaxial layer below via bottoms
Interior doped region；
Schottky contacts is formed between the metal plug being filled in through hole, thromboembolism and epitaxial layer and doped region；
Cover on epitaxial layer and keep an anode metal layer in electrical contact with top doped layer, thromboembolism, and being arranged on
A cathode metal layer on base substrate bottom surface；
Wherein the top of the grid in active groove is protruding upward in the end face of epitaxial layer, and gate top is beyond epitaxial layer end face
It is partly embedded in anode metal layer.
2. the SBR of integrated schottky diode as claimed in claim 1, it is characterised in that SBR is at reverse bias
Under the conditions of, it is positioned in the epitaxial layer near the part below body layer formation depletion region at active groove, and in body layer with outer
Prolong the depletion region that the interface of layer is formed, take this shield diode and Schottky diode to reduce reverse leakage current.
3. the SBR of an integrated schottky diode, it is characterised in that including:
One base substrate and the epitaxial layer above it, be formed with a body layer at the top of epitaxial layer, and on body layer top
Portion is formed with a top doped layer；
Form an annular isolation groove in the epitaxial layer, and the active groove being formed in the active area inside isolated groove,
And the termination groove being formed in the termination environment outside isolated groove；
Active groove, isolated groove and termination groove, all downward through top doped layer and body layer until bottom extends to this
In epitaxial layer below body layer, be all lined with pad oxide in the bottom of each of which and sidewall, and active groove, every
In groove, it is provided with grid and is provided with floating grid in termination groove；
Being formed between neighboring active groove and be formed at the through hole between isolated groove and its neighbouring active groove, through hole passes through
Wear top doped layer and body layer until extending downward in the epitaxial layer below body layer；
The body contact region being implanted in body layer and be centered around around through-hole side wall and be implanted in epitaxial layer below via bottoms
Interior doped region；
Schottky contacts is formed between the metal plug being filled in through hole, thromboembolism and epitaxial layer and doped region；
Cover on epitaxial layer and keep an anode metal layer in electrical contact with top doped layer, thromboembolism, and being arranged on
A cathode metal layer on base substrate bottom surface.
4. the SBR of integrated schottky diode as claimed in claim 3, it is characterised in that active groove and isolating trenches
The respective top of floating grid in grid in groove, termination groove is the most protruding upward in the end face of epitaxial layer, active groove and
The top of the grid in isolated groove is partly embedded in anode metal layer beyond epitaxial layer end face, floating grid and anode gold
Belong to layer insulation.
5. the SBR of integrated schottky diode as claimed in claim 4, it is characterised in that the anode of active region
The peripheral part of metal level covers the grid in isolated groove on the top of the inboard portion of active area, isolated groove
Interior grid is not covered by anode metal layer near the over top of the Outboard Sections of termination environment.
6. the SBR of integrated schottky diode as claimed in claim 3, it is characterised in that when SBR reverse bias
Time, it is positioned in the epitaxial layer near the part below body layer formation depletion layer at active groove, isolated groove, and active
The body layer in district and the interface of epitaxial layer form depletion layer, take this shield diode and Schottky diode to reduce reversely
Leakage current.
7. the method preparing the SBR being integrated with Schottky diode, it is characterised in that comprise the following steps:
Step S1, offer comprise base substrate and the Semiconductor substrate of the epitaxial layer above it, utilize and cover at epitaxial layer
A mask with patterns of openings of top, etches multiple active groove in the epitaxial layer；
Step S2, generate pad oxide at the bottom of active groove and sidewall, in active groove, then form grid,
Remove mask afterwards, make grid have the tip portion of the end face in epitaxial layer protruding upward；
Step S3, in the way of without extra mask, implant alloy at the top of epitaxial layer and form a body layer, the most again
Implant alloy at the top of body layer and form a top doped layer；
Step S4, preparing an insulation oxide layer above the end face and grid of epitaxial layer, gate top exceeds epitaxial layer top
The sidewall of the part in face is covered by insulant；
Step S5, return carve insulation oxide layer, formed be attached to grid beyond epitaxial layer end face tip portion sidewall on
Side wall, and the region that the upper surface exposing top doped layer is not covered by side wall；
Step S6, in the way of without extra mask, perform following steps respectively:
Only using side wall as Self-aligned etching mask, etch the tool running through top doped layer and extending downward in body layer
The through hole of one degree of depth；
Body layer around the via bottoms of tool first degree of depth is implanted body contact region；
Only using side wall as Self-aligned etching mask, continue below etching body layer and body layer along the through hole having first degree of depth
Epitaxial layer, form the through hole extending downward tool second degree of depth in the epitaxial layer below body layer；
Implant alloy in the bottom of the through hole of tool second degree of depth and form a doped region, and remove side wall；
Step S7, formed in through hole with epitaxial layer, doped region constitute Schottky contacts thromboembolism and on epitaxial layer heavy
A long-pending anode metal layer, gate top upwards exceeds the part of epitaxial layer end face and is covered by anode metal layer.
8. method as claimed in claim 7, it is characterised in that in step sl, while forming active groove,
Also utilize mask to etch an annular isolation groove and multiple termination groove, active groove and termination groove in the epitaxial layer to divide
In the termination environment in the active area of the inner side not being formed at isolated groove and outside.
9. method as claimed in claim 8, it is characterised in that in step s 2, after forming pad oxide,
Further comprising the steps of:
Deposition conductive material, then removes the conductive material above mask；Wherein
In active groove and mask, the conductive material in overlapping opening above it forms the grid in active groove；
In isolated groove and mask, the conductive material in overlapping opening above it forms the grid in isolated groove；
Floating grid in the conductive material in overlapping opening above it forms termination groove in termination groove and mask；
Remove described mask the most again.
10. method as claimed in claim 9, it is characterised in that in step S2, before removing described mask, first exist
Grid, floating grid top end face on formed monoxide pad；And
In step s 5, return and carve grid, floating grid each top insulation oxide layer and the composite bed of oxide spacer,
Form the screen oxide being retained in grid, floating grid each top；
In step s 6, utilize screen oxide and side wall as etch mask to form through hole.
11. methods as claimed in claim 9, it is characterised in that adjust the distance between adjacent end groove and adjustment
A distance between terminal trenches and isolated groove near isolated groove；
Control the gap width between the tip portion of adjacent floating grid, and control a terminal trenches of neighbouring isolated groove
Gap width between tip portion and the isolated groove inner grid tip portion of interior floating grid；
Ensure insulation oxide layer be filled in the gap between the tip portion of adjacent floating grid, one of neighbouring isolated groove
The part in gap between tip portion and the isolated groove inner grid tip portion of the floating grid in terminal trenches is in step
Rapid S5 will not be returned to fall completely quarter.
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| CN105720109A (en) * | 2014-12-05 | 2016-06-29 | 无锡华润上华半导体有限公司 | Groove type Schottky barrier diode and preparation method thereof |
| CN107293601B (en) * | 2016-04-12 | 2021-10-22 | 朱江 | Schottky semiconductor device and preparation method thereof |
| CN109427909A (en) * | 2017-08-25 | 2019-03-05 | 帅群微电子股份有限公司 | Semiconductor element and its manufacturing method |
| CN109148566B (en) * | 2018-08-28 | 2020-11-13 | 电子科技大学 | Silicon carbide MOSFET device and method of manufacturing the same |
| DE102019123600B4 (en) * | 2019-05-31 | 2021-05-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | SHIELDING STRUCTURE FOR REAR SUBSTRATE THROUGH CONTACTS (TSVS) |
| CN112289867B (en) * | 2020-10-29 | 2021-07-23 | 扬州国宇电子有限公司 | High-power high-voltage Schottky barrier diode |
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