CN103872231A - Semiconductor LED (Light Emitting Diode) luminescent device - Google Patents
Semiconductor LED (Light Emitting Diode) luminescent device Download PDFInfo
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- CN103872231A CN103872231A CN201410096053.8A CN201410096053A CN103872231A CN 103872231 A CN103872231 A CN 103872231A CN 201410096053 A CN201410096053 A CN 201410096053A CN 103872231 A CN103872231 A CN 103872231A
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- luminescent device
- fluorescent material
- semiconductor led
- stereoptics
- led luminescent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
The invention relates to a semiconductor LED (Light Emitting Diode) luminescent device which comprises a package substrate, an LED chip used for emitting exciting light, a diffuse reflection resin layer, a three-dimensional optical transparent container and a material containing fluorescent powder, wherein the LED chip used for emitting exciting light is arranged on the package substrate; the diffuse reflection resin layer is arranged on the package substrate at two ends of the LED chip; the LED chip is arranged in the three-dimensional optical transparent container; the material containing the fluorescent powder is arranged and the residual internal space of the three-dimensional optical transparent container is full of the material to form a fluorescent layer. According to the semiconductor LED luminescent device, the material containing the fluorescent powder is used for filling the residual space, the total reflection in the package structure is reduced, and thus the luminous efficiency is favorably improved; in addition, the size and the boundary of the material containing the fluorescent powder in the package structure are determined by the inner surface of the three-dimensional optical transparent container, and thus the optical distribution can be favorably controlled, designed and optimized.
Description
Technical field
The technical field that the invention belongs to LED encapsulation, in particular, the present invention relates to a kind of semiconductor LED luminescent device.
Background technology
Light-emitting diode (LED) is solid state light emitter, and its operation principle is the combination at p semiconductor and n semiconductor junction place of electronics and hole.Utilize the white light source of light-emitting diode (LED) can have two kinds of basic structures.A kind of is in the basic structure of direct illuminated LED, and, by the directly luminous white light that produces of LED of different colours, for example, by comprising the combination of red LED, green LED and blue led, and the combination of blue led and yellow led produces white light.Another kind is the light source basic structure based on LED-excited fluorescence powder, the light beam of single led generation in narrower wave-length coverage, this light beam irradiates on fluorescent material and excitation fluorescent material produce visible ray.This fluorescent material can comprise mixture or the compound of different types of fluorescent material, and the light being sent by fluorescent material can comprise many narrow lines of departure that are distributed in whole visible wavelength range, and sent light is white in color substantially at the mankind's naked eyes.
The requirement using according to reality, the method for packing of LED is diversified, but " surperficial Setup Type " that the packaged type of main flow is normally installed at base plate for packaging upper surface.Wire pattern (lead-in wire) is formed on the surface of the base plate for packaging that comprises resin or ceramic material, and LED element for example, is installed on wire pattern via binding agent (adhesive) silver paste.The top electrode of LED element utilizes for example gold thread of line and is connected to another lead-in wire.For protective wire and LED element, fill potting resin to form potting resin layer.In potting resin layer, powdery fluorophor is dispersed.
In prior art, conventionally use blue led or the near ultraviolet LED based on for example GaN, GaAlN, InGaN or InAlGaN of gallium nitride-based compound semiconductor.Can be by using fluorescent material (phosphor material) to obtain white light or other VISIBLE LIGHT EMISSION in described LED, fluorescent material absorbs and converts to and have more long wavelength's visible ray as exciting light and by wavelength from the some or all of transmitting of LED.For example: fluorescent material changes blueness into redness and green wavelength.Part blue excitation light can not absorbed by fluorescent material, and ruddiness and green glow that the blue excitation light of part remnants and fluorescent material send mix.Being excited another example of LED white light is ultraviolet (UV) LED that irradiates fluorescent material, and described fluorescent material absorbs UV light also makes it change red, green and blue light into.
Being excited LED white light source is better than direct illuminated LED white light source part and is, it has the color stability of better degree of aging and temperature correlation, and the better color consistency/repeatability between different batches.But it is efficient not as direct illuminated LED to be excited LED, and partly cause is that fluorescent material absorbs light and the poor efficiency in luminescence process again.
Summary of the invention
In order to realize goal of the invention of the present invention, the invention provides a kind of semiconductor LED luminescent device.
Semiconductor LED luminescent device of the present invention, comprise base plate for packaging, LED chip, diffuse reflection resin bed, the stereoptics transparent vessel of transmitting exciting light and the material that contains fluorescent material, the LED chip of described transmitting exciting light is arranged on described base plate for packaging, and described diffuse reflection resin bed is arranged on the base plate for packaging at described LED chip two ends; It is characterized in that: described LED chip is arranged in described stereoptics transparent vessel, and described in contain fluorescent material material setting the residue inner space that is full of described stereoptics transparent vessel form fluorescence coating.
Wherein, the wall thickness of described stereoptics transparent vessel is uniform or heterogeneous.
Wherein, the outer surface of described stereoptics transparent vessel is formed with non-even curface, for example, have certain roughness, or has concaveconvex structure, or forms micro-pattern.
Wherein, described stereoptics transparent vessel is made up of clear glass, transparent resin or transparent ceramic material.
Wherein, described fluorescent material is dispersed in the material that contains fluorescent material described in formation in transparent medium.
Wherein, described transparent medium is pottery, glass or resin.
Wherein, in the material that contains fluorescent material described in, also comprise non-fluorescent material, such as metallic particles, ceramic particle etc.
Semiconductor LED luminescent device of the present invention compared with prior art has following beneficial effect:
Semiconductor LED luminescent device of the present invention, LED chip and diffuse reflection resin bed are set in described stereoptics transparent vessel, and utilize containing the material of fluorescent material and fill full remaining space, reduce the total reflection in encapsulating structure, thereby be conducive to improve luminous efficiency.In addition, changed traditional fluorescent material coating method at encapsulating structure of the present invention, its volume and border are determined by the inner surface of described stereoptics transparent vessel, distribute thereby be conducive to control, design and optimizing optical.
Brief description of the drawings
Fig. 1 is the structural representation of semiconductor LED luminescent device of the present invention.
Embodiment
As shown in the figure, semiconductor LED luminescent device of the present invention, comprise base plate for packaging 10, LED chip 20, diffuse reflection resin bed 50, the stereoptics transparent vessel 40 of transmitting exciting light and the material 30 that contains fluorescent material, the LED chip of described transmitting exciting light is arranged on described base plate for packaging 10, and described diffuse reflection resin bed 50 is arranged on the base plate for packaging 10 at described LED chip 20 two ends; Described LED chip 20 is arranged in described stereoptics transparent vessel 40, and described in contain fluorescent material material 30 arrange and be full of the residue inner space of described stereoptics transparent vessel.In the present invention, the form of described stereoptics transparent vessel is casing shape, cylindrical, spherical, hemisphere or other required design shapes; The wall thickness of described stereoptics transparent vessel is uniform or heterogeneous.In addition, the outer surface of described stereoptics transparent vessel is formed with non-even curface, for example, have certain roughness, or has concaveconvex structure, or forms micro-pattern; So can reduce the total internal reflection of LED light source utilizing emitted light in stereoptics transparent vessel outer surface and air interface.But, even in the time being limited in light in encapsulating structure by total internal reflection arriving the non-even curface forming on this surface, be also difficult to launch immediately whole light.And the light of not launched immediately, be restricted returns to inner side again and by the diffusion of diffuse reflection resin bed and reflection, arrive many times and have non-even curface thus in changing transmission angle.Therefore, light most, that be restricted has finally been launched and has therefore obtained the effect of improving light extraction efficiency.Therefore, light scattering loss, substantially reach zero from the exciting light of LED and the spill that is subject to the light of total internal reflection restriction especially, thereby can strengthen significantly light emission effciency.
As exemplarily, described LED chip is to have blue led chip or the near ultraviolet LED chip of 350nm to the wavelength of 480nm.The instantiation of described fluorescent material comprises that the fluorophor with carbuncle type crystal structure is as Y
3al
5o
12: Ce, (Y, Gd)
3al
5o
12: Ce, Tb
3al
3o
12: Ce, Ca
3sc
2si
3o
12: Ce and Lu
2caMg
2(Si, Ge)
3o
12: Ce; Silicate phosphor is as (Sr, Ba)
2siO
4: Eu, Ca
3siO
4cl
2: Eu, Sr
3siO
5: Eu, Li
2srSiO
4: Eu and Ca
3si
2o
7: Eu, comprise the such as CaAl of oxide phosphor of chlorate MClO 3 fluorescent substance etc.
12o
19: Mn and SrAl
2o
4: Eu; Sulphide phosphor is ZnS:Cu, CaS:Eu, CaGa for example
2s
4: Eu and SrGa
2s
4: Eu, such as CaSi of nitrogen oxide fluorophor
2o
2n
2: Eu, SrSi
2o
2n
2: Eu, BaSi
2o
2n
2: Eu and Ca-α-SiAlON, such as CaAlSiN of nitride phosphor
3: Eu and CaSi
5n
8: Eu etc.Described fluorescent material can be distributed in described stereoptics transparent vessel in every way, and for example described fluorescent material can be dispersed in organic transparent medium, and described organic transparent medium is silicones, epoxy resin, acrylic resin or polyurethane resin.In addition for the reflection of the material that comprises fluorescent material described in improving and strengthening, diffuse effect and in order to improve radiating effect, in the described material that contains light powder, also contain non-fluorescent material, such as metallic particles, glass particle or ceramic particle etc.
Below with reference to embodiment and accompanying drawing, described semiconductor LED luminescent device is described in further detail.
stereoptics transparent vessel
In the present invention, described stereoptics transparent vessel can use various transparent materials to make, such as conventional clear glass, transparent resin etc.As exemplarily, for weight reduction, and improve thermal endurance and discoloration-resistant performance, use in the present invention following optical resin composition to prepare stereoptics transparent vessel.
Optical resin composition of the present invention, comprise: the allyl digolate noate of the trimethylolpropane triacrylate of 25.0-30.0wt%, the hexamethylene diisocyanate of 25.0～35.0wt%, 15.0-20.0wt%, the hydroxyl endblocked polydimethylsiloxane of 8.0～10.0wt%, the ethylenediamine of 3～5wt%, and the phthalic anhydride of 3～5wt%.In addition, in optical resin composition of the present invention, can also add other auxiliary agent and additive.For example, from improving mechanical strength and adjusting thermal coefficient of expansion, and the aspect of thermal conductivity considers, can mix antioxidant commonly known in the art, and nano aluminium oxide.For example, as antioxidant, for example can select 2,6-di-t-butyl-4-cresols, pentaerythrite four (3-(3,5-di-tert-butyl-hydroxy phenyl) propionic ester, octadecyl-3-(3,5-di-tert-butyl-hydroxy phenyl) propionic ester, triethylene glycol-bis-(3-tertiary butyl-4-hydroxy-5-aminomethyl phenyl) propionic ester, 2,2'-sulfo--bis-(4-methyl-6-tert butyl phenol), 2,2'-sulfo-diethyl-bis-[3-(3,5-di-tert-butyl-hydroxy phenyl)] propionic ester, it can be used in combination separately and with any.After stirring, optical resin composition of the present invention forms the stereoptics transparent vessel of required form by cast molding, then under the condition of 80～100 DEG C, solidify 20～60min, then at 120 DEG C, anneal and within 2 hours, can obtain described stereoptics transparent vessel.
Embodiment 1
Optical resin composition described in the present embodiment, is made up of the trimethylolpropane triacrylate of 25wt%, the hexamethylene diisocyanate of 34.8wt%, the allyl digolate noate of 20wt%, the hydroxyl endblocked polydimethylsiloxane of 8.0wt%, the ethylenediamine of 4wt%, phthalic anhydride, the UV-366 of 0.2wt% and the nano aluminium oxide of 4wt% of 4wt%.
Embodiment 2
Optical resin composition described in the present embodiment, is made up of the trimethylolpropane triacrylate of 30wt%, the hexamethylene diisocyanate of 29.8wt%, the allyl digolate noate of 20wt%, the hydroxyl endblocked polydimethylsiloxane of 8.0wt%, the ethylenediamine of 4wt%, phthalic anhydride, the UV-366 of 0.2wt% and the nano aluminium oxide of 4wt% of 4wt%.
Embodiment 3
Optical resin composition described in the present embodiment, is made up of the trimethylolpropane triacrylate of 28wt%, the hexamethylene diisocyanate of 31.8wt%, the allyl digolate noate of 18wt%, the hydroxyl endblocked polydimethylsiloxane of 10.0wt%, the ethylenediamine of 4wt%, phthalic anhydride, the UV-366 of 0.2wt% and the nano aluminium oxide of 4wt% of 4wt%.
Comparative example 1
Optical resin composition described in the present embodiment, is made up of the trimethylolpropane triacrylate of 50wt%, the hydroxyl endblocked polydimethylsiloxane of 8.0wt%, the hexamethylene diisocyanate of 29.8wt%, ethylenediamine, the UV-366 of 0.2wt% and the nano aluminium oxide of 4wt% of 8wt%.
Comparative example 2
Optical resin composition described in the present embodiment, is made up of the allyl digolate noate of 50wt%, the hexamethylene diisocyanate of 29.8wt%, the hydroxyl endblocked polydimethylsiloxane of 8.0wt%, the ethylenediamine of 4wt%, phthalic anhydride, the UV-366 of 0.2wt% and the nano aluminium oxide of 4wt% of 4wt%.
Comparative example 3
Optical resin composition described in the present embodiment, formed by the allyl digolate noate of 46wt%, the hexamethylene diisocyanate of 31.8wt%, the hydroxyl endblocked polydimethylsiloxane of 10.0wt%, BDO, the UV-366 of 0.2wt% and the nano aluminium oxide of 4wt% of 8wt%.
After optical resin composition prepared by embodiment 1-3 and comparative example 1-3 stirs, by moulding by casting, then under the condition of 80 DEG C, solidify 60min, then at 120 DEG C, anneal 2 hours, test mechanics and the optical property of these samples.Δ D refers to that sample is heated to 80 DEG C of rates of change of measuring shore hardness and calculating the difference of the shore hardness at room temperature recording with same sample.Δ E is the high-pressure mercury lamp (ultraviolet emission spectrum 250nm) of sample through 400W, with about 10W/m
2after treatment with irradiation 1000h, record visible light transmissivity and do not pass through the rate of change of the difference of the visible light transmissivity for the treatment of with irradiation.
Table 1
| Sample | Shore hardness D | ΔD | Light transmittance E | ΔE |
| Embodiment 1 | 87 | -2% | 89% | -2% |
| Embodiment 2 | 85 | -1% | 91% | Substantially unchanged |
| Embodiment 3 | 83 | -3% | 91% | -2% |
| Comparative example 1 | 78 | -12% | 87% | -13% |
| Comparative example 2 | 87 | -9% | 86% | -10% |
| Comparative example 3 | 85 | -12% | 88% | -20% |
fluorescence coating
Described fluorescence coating for example can be by being dispersed in described fluorescent material in transparent pottery, glass or resin and forming.Described fluorescent material can be selected as required from prior art.Fluorescent material is dispersed in optium concentration in resin etc. and is subject to the impact of following factor: the particle size of the viscosity of for example raw material, grain shape, fluorescent material and particle size distribution etc.Those skilled in the art can according to the concentration of service condition or other selecting factors fluorescent material, for example, be generally 3～20wt%.In order to control the distribution of the fluorescent material with high dispersibility, described fluorescent material preferably has the average particle size particle size of 0.1 to 5 μ m.As exemplarily and preferably, in order to improve and improve fluorescence coating thermal endurance and discoloration-resistant performance, use in the present invention following fluorescent material resin combination to solidify to form fluorescence coating.
Fluorescent material resin combination of the present invention, comprise: the silane coupler of the IPDI of the glycidyl methacrylate of 25.0～30.0wt%, the ECA of 10.0-15.0wt%, 25.0～35.0wt%, PTMG1000, the 3.0～10.0wt% of 5～10wt%, methane two mercaptan of 3～5wt%, and the fluorescent material of 3.0～20.0wt%.In addition, in described fluorescent material resin combination, can also use antioxidant and nano inorganic filler as required.
Embodiment 4
Fluorescent material resin combination described in the present embodiment is by the γ aminopropyltriethoxy silane of PTMG1000, the 5wt% of the IPDI of the ECA of the glycidyl methacrylate of 25.0wt%, 15.0wt%, 30.0wt%, 8wt%, methane two mercaptan of 5wt%, BHT, the triphenyl phosphite of 1.0wt% and the fluorescent material of 10.0wt% of 1.0wt%.
Embodiment 5
Fluorescent material resin combination described in the present embodiment is by the γ aminopropyltriethoxy silane of PTMG1000, the 8wt% of the IPDI of the ECA of the glycidyl methacrylate of 30.0wt%, 10.0wt%, 32.0wt%, 5wt%, methane two mercaptan of 3wt%, the fluorescent material of the BHT of 1.0wt%, the triphenyl phosphite of 1.0wt% and 10.0wt%.
Embodiment 6
Fluorescent material resin combination described in the present embodiment is by the γ aminopropyltriethoxy silane of PTMG1000, the 8wt% of the IPDI of the ECA of the glycidyl methacrylate of 25.0wt%, 12.0wt%, 30.0wt%, 8wt%, methane two mercaptan of 5wt%, the fluorescent material of the BHT of 1.0wt%, the triphenyl phosphite of 1.0wt% and 10.0wt%.
Comparative example 4
Fluorescent material resin combination described in the present embodiment is by the γ aminopropyltriethoxy silane of PTMG1000, the 5wt% of the IPDI of the ECA of 40.0wt%, 30.0wt%, 8wt%, methane two mercaptan of 5wt%, BHT, the triphenyl phosphite of 1.0wt% and the fluorescent material of 10.0wt% of 1.0wt%.
Comparative example 5
Fluorescent material resin combination described in the present embodiment is by the γ aminopropyltriethoxy silane of PTMG1000, the 8wt% of the IPDI of the glycidyl methacrylate of 40.0wt%, 32.0wt%, 5wt%, methane two mercaptan of 3wt%, the fluorescent material of the BHT of 1.0wt%, the triphenyl phosphite of 1.0wt% and 10.0wt%.
Comparative example 6
Fluorescent material resin combination described in the present embodiment is by 1 of the γ aminopropyltriethoxy silane of PTMG1000, the 8wt% of the IPDI of the ECA of 35.0wt%, 32.0wt%, 8wt%, 5wt%, 4-butanediol, the fluorescent material of the BHT of 1.0wt%, the triphenyl phosphite of 1.0wt% and 10.0wt%.
The fluorescent material resin combination of embodiment 4-6 and comparative example 4-6 is injected in optical clear container and under the condition of 50～60 DEG C and solidifies and process 3～8 hours.The fluorescent material BaMg that is green light as exemplary described fluorescent material
2al
16o
27: (Eu, Mn), described LED chip is the near ultraviolet LED of transmitting, emission wavelength is 395nm.When operation LED, measure and calculate luminous flux, then under 90%RH condition, under 60 DEG C of conditions, make LED after luminous 1000 hours, again measure and calculate luminous flux, and calculate the rate of change Δ Q of luminous flux, and (A does not have variable color, and B is variable color slightly to observe the change color of described fluorescence coating, C variable color, the violent variable color of D).Test result shows: in the time that LED brings into operation, the luminous intensity of embodiment and comparative example is substantially suitable, but embodiment 4-6 is compared with comparative example 4-6, the rate of change of luminous flux significantly diminish (corresponding luminous intensity variations is little); Concrete outcome is as shown in table 2.
Table 2
| Sample | ΔQ | Change color |
| Embodiment 4 | -4% | A |
| Embodiment 5 | -5% | A |
| Embodiment 6 | -5% | A |
| Comparative example 4 | -12% | B |
| Comparative example 5 | -35% | D |
| Comparative example 6 | -28% | C |
For the ordinary skill in the art; specific embodiment is just exemplarily described the present invention by reference to the accompanying drawings; obviously specific implementation of the present invention is not subject to the restrictions described above; as long as adopted the improvement of the various unsubstantialities that method of the present invention design and technical scheme carry out; or without improving, design of the present invention and technical scheme are directly applied to other occasion, all within protection scope of the present invention.
Claims (10)
1. a semiconductor LED luminescent device, comprises base plate for packaging, LED chip, diffuse reflection resin bed, the stereoptics transparent vessel of transmitting exciting light and the material that contains fluorescent material; It is characterized in that: the LED chip of described transmitting exciting light is arranged on described base plate for packaging, and described diffuse reflection resin bed is arranged on the base plate for packaging at described LED chip two ends; Described LED chip is arranged in described stereoptics transparent vessel, and described in contain fluorescent material material setting the residue inner space that is full of described stereoptics transparent vessel form fluorescence coating.
2. semiconductor LED luminescent device according to claim 1, is characterized in that: the wall thickness of described stereoptics transparent vessel is uniform or heterogeneous.
3. semiconductor LED luminescent device according to claim 1, is characterized in that: the outer surface of described stereoptics transparent vessel is formed with non-even curface.
4. semiconductor LED luminescent device according to claim 3, is characterized in that: have certain roughness, or have concaveconvex structure, or form micro-pattern.
5. semiconductor LED luminescent device according to claim 3, is characterized in that: described stereoptics transparent vessel is made up of clear glass, transparent resin or transparent ceramic material.
6. semiconductor LED luminescent device according to claim 5, it is characterized in that: described stereoptics transparent vessel is poured into a mould formation by optical resin composition, described optical resin composition, comprise: the allyl digolate noate of the trimethylolpropane triacrylate of 25.0-30.0wt%, the hexamethylene diisocyanate of 25.0～35.0wt%, 15.0-20.0wt%, the hydroxyl endblocked polydimethylsiloxane of 8.0～10.0wt%, the ethylenediamine of 3～5wt%, and the phthalic anhydride of 3～5wt%.
7. semiconductor LED luminescent device according to claim 1, is characterized in that: described fluorescent material is selected from the one in fluorophor, silicate phosphor, chlorate MClO 3 fluorescent substance, sulphide phosphor, nitrogen oxide fluorophor or the nitride phosphor of carbuncle type crystal structure.
8. semiconductor LED luminescent device according to claim 7, is characterized in that: described fluorescent material is dispersed in the material that contains fluorescent material described in formation in transparent medium.
9. semiconductor LED luminescent device according to claim 8, is characterized in that: described in contain fluorescent material material in also comprise non-fluorescent material.
10. semiconductor LED luminescent device according to claim 1, is characterized in that: described fluorescence coating solidify to form by fluorescent material resin combination.
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| CN201410096053.8A CN103872231B (en) | 2014-03-14 | 2014-03-14 | Semiconductor LED luminescent device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155280A (en) * | 2017-12-15 | 2018-06-12 | 广东昭信照明科技有限公司 | A kind of LED filament and its manufacturing method |
| CN110016333A (en) * | 2019-04-22 | 2019-07-16 | 甘肃兰辰科技有限公司 | Mechanoluminescence material and preparation method thereof based on yttrium-aluminium-garnet structure fluorescent powder |
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|---|---|---|---|---|
| CN201514954U (en) * | 2009-08-03 | 2010-06-23 | 金芃 | Encapsulation of semiconductor light-emitting diode with roughing surface |
| US7763905B2 (en) * | 2007-01-18 | 2010-07-27 | Citizen Electronics Co., Ltd. | Semiconductor light-emitting device |
| CN102299237A (en) * | 2010-06-22 | 2011-12-28 | 日东电工株式会社 | Semiconductor light emitting device |
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2014
- 2014-03-14 CN CN201410096053.8A patent/CN103872231B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7763905B2 (en) * | 2007-01-18 | 2010-07-27 | Citizen Electronics Co., Ltd. | Semiconductor light-emitting device |
| CN201514954U (en) * | 2009-08-03 | 2010-06-23 | 金芃 | Encapsulation of semiconductor light-emitting diode with roughing surface |
| CN102299237A (en) * | 2010-06-22 | 2011-12-28 | 日东电工株式会社 | Semiconductor light emitting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155280A (en) * | 2017-12-15 | 2018-06-12 | 广东昭信照明科技有限公司 | A kind of LED filament and its manufacturing method |
| CN110016333A (en) * | 2019-04-22 | 2019-07-16 | 甘肃兰辰科技有限公司 | Mechanoluminescence material and preparation method thereof based on yttrium-aluminium-garnet structure fluorescent powder |
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| CN103872231B (en) | 2016-11-16 |
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Address after: Wujiang District of Suzhou City, Jiangsu province 215000 Lili town FENHU Road No. 558 Patentee after: SUZHOU JINGPIN ADVANCED MATERIALS Co.,Ltd. Address before: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee before: SUZHOU JINGPIN OPTOELECTRONICS Inc. |
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Effective date of registration: 20191227 Address after: 314000 3rd floor of No. 338 Jingxing Road, Caoqiao Street, Pinghu City, Jiaxing City, Zhejiang Province Patentee after: Jiaxing Jingxing Lake Electronic Technology Co.,Ltd. Address before: Wujiang District of Suzhou City, Jiangsu province 215000 Lili town FENHU Road No. 558 Patentee before: SUZHOU JINGPIN ADVANCED MATERIALS Co.,Ltd. |
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Granted publication date: 20161116 |