CN103872217A - High-power LED (Light Emitting Diode) light source package body - Google Patents
High-power LED (Light Emitting Diode) light source package body Download PDFInfo
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- CN103872217A CN103872217A CN201410096052.3A CN201410096052A CN103872217A CN 103872217 A CN103872217 A CN 103872217A CN 201410096052 A CN201410096052 A CN 201410096052A CN 103872217 A CN103872217 A CN 103872217A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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Abstract
The invention relates to a high-power LED (Light Emitting Diode) light source package body and belongs to the technical field of semiconductor lighting. The high-power LED light source package body comprises a metal substrate, wherein a resin insulation layer and a high thermal conductivity insulation layer are formed on the metal substrate; a metal pattern circuit is formed on the resin insulation layer; a metal circuit and a high-power LED lamp bead or chip are formed on the high thermal conductivity insulation layer; the metal pattern circuit on the resin insulation layer is connected with the metal circuit on the high thermal conductivity insulation layer by a metal connector. According to the high-power LED light source package body, a ceramic insulation plate and a resin insulation plate of different heat conductivity coefficients and different materials are arranged on the metal substrate, the high-reliability insulation metal substrate for LED packaging with obviously improved heat dissipation can be provided, the illumination temperature of the LED lamp bead and chip is reduced by excellent thermal conductivity, and thus the high-power LED lamp bead or chip with higher luminance can be mounted.
Description
Technical field
The invention belongs to the technical field of semiconductor lighting, in particular, the present invention relates to a kind of light source module of being convenient to high efficiency and heat radiation and being applied to great power LED.
Background technology
LED (light-emitting diode) technology starts from late 1960s, through about semicentennial development, as a kind of new type light source, obtain unprecedented development owing to thering is the unrivaled advantages of conventional light source such as energy-saving and environmental protection, the life-span is long, toggle speed is fast.Great power LED solid-state illumination is to have continued since incandescent lamp invention, most important illumination revolution.Semiconductor LED material can be converted into luminous energy by electric energy, has different from traditional lighting light source maximum, and luminous efficiency is high, and energy consumption is only ordinary incandescent lamp 1/8th; And the life-span is long, be typically energy-conservation, environmental protection illumination without stroboscopic, without infrared and ultra-violet radiation etc., be widely used at present street lighting, industrial and mineral and public place etc.
Along with the develop rapidly of electronics industry, the volume of electronic product is more and more less, is accompanied by the increase of LED current strength and luminous quantity, and the caloric value of LED chip also rises thereupon, and for high-capacity LED, 80% of input energy sources all consumes with hot form.If the heat not in time chip being sent is derived and dissipated, a large amount of heats will accumulate in LED inside, will cause the temperature-rise effect of chip, and the luminous efficiency of LED will sharply decline, and life and reliability also will be had a greatly reduced quality; The high heat of high temperature will make the inner mechanical stress that produces of LED encapsulating structure in addition, also may cause quality problems.Therefore along with the improving constantly of the power density of single great power LED, to the design of high-power LED encapsulation material and structure, also day by day become a huge challenge of field of semiconductor illumination.
Initial LED illuminating product; its LED light source is directly packaged in lamp body inside; because its lamp body material mostly is conducting metal material; in the time that circuit connects, must consider the insulation protection of circuit, waste time and energy and fail safe, stability not high; therefore there is the encapsulation wiring board of LED light source; be first about to plurality of LEDs and arrange and be packaged in monoblock substrate, and prewiring, so that encapsulation LED light source is thereon carried out to circuit connection, then is placed in lamp body inside by this substrate and connects into lighting circuit on substrate.At present, the applied LED substrate of LED lighting field, distinguish and mainly contain conventional PCB substrate (being mainly resinae substrate), pottery substrate and insulated metal matter substrate (being mainly aluminium alloy base plate) from material, and for the encapsulation of great power LED, insulating metal substrate solves the preferred plan of heat dissipation problem beyond doubt.
Traditional insulating metal substrate is made up of metal substrate, insulating barrier and conductive layer (being metal layer).And insulating barrier is key technology wherein, it mainly plays the function of bonding, insulation and heat conduction.Insulating barrier is conductive barrier maximum in power model structure, its heat-conductive characteristic is better, the diffusion of the heat that produces while being more conducive to device operation, also just be more conducive to reduce the operating temperature of device, thereby reach the power load that improves module, reduce volume, the object of life-saving and raising power output.As preferably, adopt high-termal conductivity aluminium nitride material as thermal insulation layer, the heat of LED can reach metal substrate by heat by high-termal conductivity aluminium nitride ceramics layer.Although its thermal conductivity and thermal endurance are significantly better than dielectric resin material, can realize high power LED package, it is cost costliness not only, and has the problem that is difficult to make large-sized goods.
Summary of the invention
In order to solve the problems of the technologies described above, the object of the present invention is to provide a kind of high-power LED light source packaging body.Adopt high-power LED light source packaging body of the present invention not only cost relatively low and also have advantages of high thermal conductivity, ageing-resistant, resist wear and dependable performance.
High-power LED light source packaging body of the present invention, comprise metal substrate, it is characterized in that: on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and on described resin insulating barrier, be formed with metal pattern circuit, described high heat conductive insulating layer is formed with metallic circuit and large-power LED light bead or chip, and the metal pattern circuit on described resin insulating barrier is connected by metal connector with the metallic circuit on described high heat conductive insulating layer; And described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper; The thermal conductivity of described high heat conductive insulating layer is 50～500W/mK, and thickness is 20～200 μ m; The thermal conductivity of described resin insulating barrier is 0.5～30W/mK, and thickness is 20～200 μ m.
Wherein, the power of single LED lamp pearl or chip is more than 1W, more than being preferably 3W, more preferably more than 5W.
Wherein, on described metal substrate, there is multiple resin insulating barriers and multiple high heat conductive insulating layer; And between described resin insulating barrier, adjacent setting or interval arrange; Adjacent or interval setting between described high heat conductive insulating layer; Between described resin insulating barrier and described high heat conductive insulating layer, adjacent setting or interval arrange.
Wherein, described metal substrate has the steel of aluminium or copper to make by plating, and described steel is selected from the one in mild steel, heat-resisting steel or stainless steel.
Wherein, described metallic matrix is through surface treatment procedure, and described surface treatment procedure comprises any one in roughening treatment, pickling or alkaline etching operation.
Wherein, described metal base surface forms the anodic alumina films of electric insulation in its surface through surface treatment.
Wherein, described LED lamp pearl or LED chip are connected with metallic circuit by wave soldering, reflow soldering, eutectic welding or use electroconductive binder.
Wherein, on described high heat conductive insulating layer, be formed with metallic circuit and pad, described LED lamp pearl or LED chip are combined on pad, and described pad and the electric connection of described metallic circuit.
Wherein, described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler.
Compared with prior art, technical scheme of the present invention has following beneficial effect:
The present invention by arranging Ceramic insulator and the insulation resin sheet of different conductive coefficients and unlike material on metal substrate, the LED encapsulation insulating metal substrate of the high reliability that thermal diffusivity significantly improves can be provided, and good thermal conductivity can reduce the some brightness temperature of LED lamp pearl and chip, thereby the LED chip of high-power more high brightness can be installed; In addition the present invention is also by the processing to metal substrate, can form on the surface of metal substrate the high pressure resistant insulating barrier puncturing, the anodised aluminium thin layer of for example special processing or organic insulation thin layer, further improve the high pressure resistant breakdown performance of encapsulating structure, thereby realized the more high brightness of LED.
Embodiment
High-power LED light source packaging body of the present invention, comprise metal substrate, on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and on described resin insulating barrier, be formed with metal pattern circuit, described high heat conductive insulating layer is formed with metallic circuit and large-power LED light bead or chip, and the metal pattern circuit on described resin insulating barrier is connected by metal connector with the metallic circuit on described high heat conductive insulating layer.Described LED lamp pearl or LED chip are by wave soldering, reflow soldering, eutectic welding or use electroconductive binder to be connected with plain conductor.On described high heat conductive insulating layer, can also be formed with metallic circuit and pad in addition, described LED lamp pearl or LED chip are combined on pad simultaneously, and described pad and described metallic circuit are electrically connected.Described metal connector can be for example the Bonding of employing silver, gold or copper, bulge, bridge material etc.; In order to guarantee conductivity, be preferably silver or silver alloy.Specifically, for example, can adopt solder, solder brazing, high-termal conductivity binding agent etc. to be electrically connected, be preferably solder.
In the present invention, for the metal substrate that obtains having good rigidity also can use plating to have the steel of aluminium or copper as metal substrate, described steel can be selected mild steel, heat-resisting steel or stainless steel, considers preferred heat-resisting steel or stainless steel from stable on heating angle.As the example of heat resisting steel, for example can select to contain the steel alloy of chromium and/or nickel, cobalt, tungsten, can be divided into austenite, ferrite, martensitic according to institutional framework.As stainless example, it refers to more than 11% chromium or contains the steel that more than 11% chromium also contains nickel.Stainless material is categorized as austenite, ferrite, martensitic.Example as austenite stainless steel for example can use SUS304, SUS316, SUS310, SUS309, SUS317, SUS321 or SUS347 etc.Example as ferrite-group stainless steel for example can use SUS430, SUS405, SUS410, SUS436 or SUS444.Example as martensitic stainless steel for example can use SUS403, SUS440, SUS420 or SUS410 etc.If use the preferred austenite of flexible base, board or ferrite.The thickness of metal substrate can be selected according to actual needs, for example can be from 0.1 millimeter to tens of millimeters.Described substrate preferably uses aluminum or aluminum alloy in the present invention, as the preferred not aluminium alloy of compound between containing metal of aluminium alloy.Be preferably specifically that impurity is few, the aluminium of more than 99 quality % purity.For example, Al, the 99.0%Al etc. of preferred 99.99wt%.Or, also can add the element that is difficult for producing intermetallic compound.For example can add the almag of appropriate magnesium.Except magnesium, also can select the interpolation element that the solid solubility limit such as copper or silicon is high.
As preferably, described metallic matrix is through surface treatment procedure, and described surface treatment procedure can comprise the various operations such as roughening treatment, pickling, alkaline etching.As the exemplary process that is used to form coarse surface, can enumerate to metal substrate is implemented successively the roughened processing of mechanicalness, alkaline etching processing, adopts sour clean and used the methods such as the roughened processing of electrochemistry of electrolyte; Metal substrate is implemented repeatedly the roughened processing of mechanicalness, alkaline etching processing, adopts sour dirty removing processing and used the method for the roughened processing of electrochemistry of different electrolyte; But the present invention is not limited to these.Can be inorganic acid and/or organic acid as acid, described inorganic acid can be for example sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid etc.; Described organic acid can be for example carboxylic acid or sulfonic acid, such as formic acid, acetic acid, tartaric acid, oxalic acid, malic acid, ascorbic acid and benzoic acid etc.Can be for example alkali-metal hydroxide as conventional alkali, for example NaOH or potassium hydroxide, also can use the organic base such as Tetramethylammonium hydroxide, trimethyl (ethoxy) ammonium hydroxide in addition.In order to reduce the etch quantity of metal matrix material in pickling or alkaline etching processing procedure, in described aqueous slkali or acid solution, can contain anticorrodent, can contain in addition other component such as surfactant and chelating agent.In addition, described surface treatment, can also be to form the anodic alumina films of electric insulation or the organic film of electric insulation at described metal base surface, thereby improves the high pressure resistant breakdown strength of described metallic matrix.
The described high-power power that refers to single LED lamp pearl or chip is more than 1W in the present invention, more than being preferably 3W, more preferably, more than 5W.And described LED refers to Light-Emitting Diode, it refers to the luminescent diode component having to the contact area of diode power supply.Multi-form semiconductor light-emitting-diode can be formed by the PN junction (III-V semiconductor) of one or more III family elements and one or more V group elements.The example that can be used for the III-V semi-conducting material of LED comprises: nitride, as gallium nitride or InGaN; And phosphide is as InGaP.Also the III-V material of other type can be used, the inorganic material of other family can also be used.In the present invention, described LED can be encapsulation or unpackaged structure, comprises for example LED of LED tube core, LED lamp pearl, LED chip and other structure.LED chip (COB) refers to the LED tube core being directly installed in circuit substrate.Term LED also comprises that, with fluorescent powder packaging or the LED relevant to fluorescent material, wherein, fluorescent material changes the light being sent by LED into the light of different wave length.Can automatically engage (TAB) or flip-chip engages to form by wire-bonded, coil type with the electrical connection of LED.LED can be top light emitting, for example US5, and disclosed LED in 998,935A, or LED can be lateral emitting, for example disclosed LED in US2004/233665A1.In the present invention, described LED can be chosen as with any required wavelength emission, as launched in red, green, blueness, ultraviolet or far-infrared spectrum district.In LED array, each LED can launch in same spectral regions, or can in different spectral regions, launch.Different LED can be used for producing different colors, and wherein, the color of the light of being launched by light-emitting component is selectable.The independent control of different LED is caused to the color of the light that can control transmitting.In addition, if need white light, can provide the LED of a large amount of transmitting different colours light, the effect of its combination is that to be perceived by be white light to transmitting beholder.The other method that produces white light is to use one or more to launch the relatively LED of short wavelength's light, and uses fluorescent material wavelength shifter that the light of transmitting is converted to white light.White light is to stimulate the photoreceptor of human eye to think the light of the outward appearance of " white " to produce common beholder.This white light can be partial to redness (being commonly referred to warm white light) or deflection blue (being commonly referred to cold white light).
In the present invention, be 50～500W/mK as the thermal conductivity of the described high heat conductive insulating layer in the present invention.The thickness of described high heat conductive insulating layer is preferably 20～200 μ m.Described high heat conductive insulating layer can be made up of ceramic material or nonmetal monocrystal material, can select but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride as ceramic material.The ceramic wafer that described ceramic material can be fired by cutting in the present invention is also welded on metal substrate of the present invention, and described welding method can be for example the method for soldering, such as solder, solder brazing or active soldering etc.Described ceramic material can also prepare by original position formation method in the present invention, and for example, by vacuum coating method, for example conventional physical gas-phase deposite method or chemical gaseous phase depositing process prepare.As example for example evaporation, sputter or the ion-plating deposition method of physical vapour deposition (PVD).
In the present invention, as preferably, described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler.In addition,, in the hardening resin composition that is used to form insulating barrier, can also can also use as required catalyst, silane coupling agent, metatitanic acid lipid coupling agent, stabilizer and curing accelerator etc.As inorganic filler, preferably there is the good inorganic filler of electrical insulating property and heat conductivity, for example can use silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride, boron nitride etc.For keeping suitable mobility, preferably 5～15wt% of the content of the inorganic filler in insulating barrier.The granularity of inorganic filler is better to comprise two kinds of granularities that average grain diameter is 0.6 μ m～2.4 μ m and 5 μ m～20 μ m.By corase particles larger average grain diameter and the less particulate of average grain diameter are mixed, during with the each particulate of independent use compared with, can realize more filling, can obtain good heat conductivity.In addition, shape of particle can be that pulverize, spherical or lepidiod.
metal substrate and anodic alumina films
Described metal substrate is the steel that plating has aluminium lamination in the present embodiment, and described steel can be selected mild steel, heat-resisting steel or stainless steel, considers preferred heat-resisting steel or stainless steel from stable on heating angle.On described aluminium lamination, be formed with anodic alumina films; The thickness of described aluminium lamination is 0.5～10mm, and the thickness of anodic alumina films is 10～20 μ m; The durable time of insulation of described anodic alumina films is greater than 1000 hours, and the durable time of described insulation refers under 50 ℃, the condition of 85%RH and on anodic alumina films, applies the direct voltage of 100V, and resistance value is dropped to 10
6time below Ω.
The preparation method of described anode oxide film is as follows: first have the steel of aluminium lamination to clean and scale removal to plating, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20～35g/L, the 6-ACA 6-aminocaproic acid of 3～5g/L, the hydrogen peroxide of 0.5～1.0g/L, the Triammonium citrate of 3～5g/L; Be that 10～20 ℃, current density are 0.5～1A/dm in liquid temperature
2, electrolytic treatments 20～30min.Adopt above-mentioned anode oxidation method, owing to adopting citric acid as Treatment Solution, and appropriate hydrogen peroxide and 6-ACA 6-aminocaproic acid are added therein, in the time of anodized, can make aluminum ions in liberal supply, thereby can obtain fine and close anodic alumina films, be under 10 μ m and above condition at thickness, even can meet without sealing of hole processing the requirement that the durable time of insulation is greater than 1000 hours.
Embodiment 1
The preparation method of the anode oxide film described in the present embodiment is as follows: first have the steel of aluminium lamination to clean and scale removal to plating, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20g/L, the 6-ACA 6-aminocaproic acid of 3g/L, the hydrogen peroxide of 1.0g/L, the Triammonium citrate of 3g/L; Be that 10 ℃, current density are 1A/dm in liquid temperature
2, electrolytic treatments 20min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1000 hours.
Embodiment 2
The preparation method of the anode oxide film described in the present embodiment is as follows: first have the steel of aluminium lamination to clean and scale removal to plating, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 30g/L, the 6-ACA 6-aminocaproic acid of 4g/L, the hydrogen peroxide of 1.0g/L, the Triammonium citrate of 5g/L; Be that 20 ℃, current density are 1A/dm in liquid temperature
2, electrolytic treatments 20min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1000 hours.
Embodiment 3
The preparation method of the anode oxide film described in the present embodiment is as follows: first have the steel of aluminium lamination to clean and scale removal to plating, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 35g/L, the 6-ACA 6-aminocaproic acid of 5g/L, the hydrogen peroxide of 1.0g/L, the Triammonium citrate of 5g/L; Be that 10 ℃, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min.The dense anodic oxide aluminium film obtaining durable time of insulating is greater than 1500 hours.
Comparative example 1
First there is the steel of aluminium lamination to clean and scale removal to plating, then in oxalic acid solution, carry out anodized, in described oxalic acid solution, contain the oxalic acid of 35g/L, the oxalic acid aluminium of 5g/L; Be that 20 ℃, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min; Then in boric acid aqueous solution, seal processing, in described boric acid aqueous solution, contain the boric acid of 0.5mol/L and the sodium tetraborate of 0.2mol/L; Sealing of hole condition is 20 ℃ of liquid temperatures, current density 1A/dm
2, 5 minutes electrolytic treatments time, its durable time of insulating is 300～500 hours.
Comparative example 2
First there is the steel of aluminium lamination to clean and scale removal to plating, then in sulfuric acid solution, carry out anodized, in described sulfuric acid solution, contain the oxalic acid of 35g/L, the aluminum sulfate of 5g/L; Be that 20 ℃, current density are 1A/dm in liquid temperature
2, electrolytic treatments 30min; Then in boric acid aqueous solution, seal processing, in described boric acid aqueous solution, contain the boric acid of 0.5mol/L and the sodium tetraborate of 0.2mol/L; Sealing of hole condition is 20 ℃ of liquid temperatures, current density 1A/dm
2, 5 minutes electrolytic treatments time, its durable time of insulating is 250～400 hours.
high heat conductive insulating layer
In the present invention, the scope of the conductive coefficient of described high heat conductive insulating layer is 50～500W/mK.Described high heat conductive insulating layer thickness scope is 20～500 μ m, for example, be 50 μ m.Described high heat conductive insulating layer can be made up of ceramic material or nonmetal monocrystal material.Can select but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride as ceramic material.The ceramic wafer that described ceramic material can be fired by cutting in the present invention is also welded on metal substrate of the present invention, described welding method can be for example the method for soldering, such as solder, solder brazing or active soldering etc., preferably use active soldering, the composition of described active soldering for example can be selected the Si of Al, 3.00wt% and the Cu of surplus of Ti, the 2.00wt% of 2.25wt%; For example can select the Cu of Ti, 32.250wt% and the Ag of surplus of 1.25wt%; For example can select the Cu of In, 27.25wt% and the Ag of surplus of Ti, the 12.50wt% of 1.25wt%.In addition, described high heat conductive insulating layer can also adopt evaporation, the method of sputter plating or reactive ion plating and chemical vapour deposition (CVD) prepares, for example adopting application people is Suzhou Jing Pin Electro-optical Technology, INC. (US) 62 Martin Road, Concord, Massachusetts 017, publication number is CN103354221A, CN103353065A, CN103354219A, CN103354222A, CN103354698A, CN103354220A, CN103354269A, CN103354697A, CN103354699A, CN103354254A, CN103327736A, CN103327735A, CN103325921A, CN103338588A, or notification number is CN203340413U, CN203339213U, CN203339139U, CN203340409U, CN203340407U, CN203340408U, CN203339224U, CN203336288U, the preparation method who records in CN203339140U and CN203339145U, and above-mentioned document is documented in this, as a reference.
resin insulating barrier
In the present invention, the thermal conductivity of described resin insulating barrier may be selected to be 0.5～30W/mK, and the thickness range of described resin insulating barrier is preferably 20～200 μ m.
Described resin insulating barrier is formed by the hardening resin composition that contains thermosetting resin, curing agent and inorganic filler, in addition, in the hardening resin composition that is used to form insulating barrier, can also can also use as required other component etc.Formation condition for example can be solidified 30～180 seconds under the condition of 160～180 ℃.As preferably, 2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that described hardening resin composition contains 55～60wt%, the vinyltriethoxysilane of 12.5～15.0wt%, 8.0～10.0wt%, the TSIM of 3.2～5.0wt%, 2.5～3.0wt%, 0.5～1.0wt%, 6-BHT, and the average grain diameter of 3～8wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 3～8wt% are the alumina particulate of 5.0 μ m.
Embodiment 4
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 55wt%, the vinyltriethoxysilane of 15.0wt%, 10.0wt%, the TSIM of 5.0wt%, 2.5wt%, 1.0wt%, 6-BHT, and the average grain diameter of 5.5wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.0wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 20～25W/mK.
Embodiment 5
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 60wt%, the vinyltriethoxysilane of 12.5wt%, 8wt%, the TSIM of 3.2wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 6.3wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.0wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 22～26W/mK.
Embodiment 6
2 of the phthalic anhydride of benzene olefin(e) acid-2-hydroxy methacrylate of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 58wt%, the vinyltriethoxysilane of 15wt%, 10wt%, the TSIM of 5wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 4wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 4wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 18～22W/mK.Embodiment 7
2 of the phthalic anhydride of the Bisphenol F diglycidyl ether that hardening resin composition described in the present embodiment contains 78wt%, the glyoxal ethyline of 5wt%, 3.0wt%, 1.0wt%, 6-BHT, and the average grain diameter of 6.5wt% is that 2.0 alumina particulates of μ m and the average grain diameter of 6.5wt% are the alumina particulate of 5.0 μ m.When the insulation resin layer thickness of preparation is 50 μ m, recording its thermal conductivity is 15～20W/mK.
Described resin insulating barrier, except meeting required thermal conductivity, also should have excellent heat-resisting discolouration in the present invention.In order to detect the heat-resisting discoloration of above-mentioned hardening resin composition, by described hardening resin composition, at 170 ℃, 8N/mm
2and be that to be processed into diameter under the condition of 120 seconds be that 50mm × thickness is that the disk of 3mm is as sample curing time, then under the condition of 150 ℃, place 24 hours, utilization visually observes its heat-resisting discolouration, find that the sample described in embodiment 4-6 do not find metachromatism, and the slightly variable color or variable color has occurred of sample described in embodiment 7.
metal pattern circuit
According to actual needs, at described resin insulating barrier, or be all formed with metal pattern circuit on described resin insulating barrier and described high heat conductive insulating layer.On described edge layer, can form conductive copper films by boning or pressing Copper Foil, or can form copper film by sputter, chemical plating (need to activate in advance).The thickness of described copper film is for example that 2～5 μ m are thick, then coat photoresist being with on described copper film, then on mask aligner, utilize metal lithographic mask to carry out photoetching, then form metal pattern circuit through developing, or, adopt the method for silk screen printing directly to form the figure of conductive metal layer; After baking-curing, more described aluminium lamination is carried out to etching with wet etching process, after etching, can obtain described metal pattern circuit.
Industrial applicibility
High-power LED light source packaging body of the present invention, has improved heat dispersion and reliability, can be widely used in street lighting, industrial and mineral and public place etc. at industrial circle.
For the ordinary skill in the art; specific embodiment is just exemplarily described the present invention by reference to the accompanying drawings; obviously specific implementation of the present invention is not subject to the restrictions described above; as long as adopted the improvement of the various unsubstantialities that method of the present invention design and technical scheme carry out; or without improving, design of the present invention and technical scheme are directly applied to other occasion, all within protection scope of the present invention.
Claims (10)
1. a high-power LED light source packaging body, comprise metal substrate, it is characterized in that: on described metal substrate, be formed with resin insulating barrier and high heat conductive insulating layer, and on described resin insulating barrier, be formed with metal pattern circuit, described high heat conductive insulating layer is formed with metallic circuit and large-power LED light bead or chip, and the metal pattern circuit on described resin insulating barrier is connected by metal connector with the metallic circuit on described high heat conductive insulating layer; And described metal connector is lead-in wire, bulge and/or the bridge material that adopts silver, gold or copper; The thermal conductivity of described high heat conductive insulating layer is 50～500W/mK, and thickness is 20～200 μ m; The thermal conductivity of described resin insulating barrier is 0.5～30W/mK, and thickness is 20～200 μ m.
2. packaging body according to claim 1, is characterized in that: the power of single LED lamp pearl or chip is more than 1W.
3. packaging body according to claim 1, is characterized in that: described metal substrate has the steel of aluminium lamination to make by plating, and described steel is selected from the one in mild steel, heat-resisting steel or stainless steel.
4. packaging body according to claim 1, is characterized in that: described metallic matrix is through surface treatment procedure, and described surface treatment procedure comprises any one in roughening treatment, pickling or alkaline etching operation.
5. packaging body according to claim 3, is characterized in that: described metal base surface forms the anodic alumina films of electric insulation in its surface through surface treatment.
6. packaging body according to claim 5, is characterized in that: on described aluminium lamination, be formed with anodic alumina films; The thickness of described aluminium lamination is 0.5～10mm, and the thickness of anodic alumina films is 10～20 μ m; The durable time of insulation of described anodic alumina films is greater than 1000 hours, and the durable time of described insulation refers under 50 ℃, the condition of 85%RH and on anodic alumina films, applies the direct voltage of 100V, and resistance value is dropped to 10
6time below Ω.
7. packaging body according to claim 6, it is characterized in that: described anodic alumina films obtains by carry out anodized in aqueous citric acid solution, described aqueous citric acid solution contains: the citric acid of 20～35g/L, the 6-ACA 6-aminocaproic acid of 3～5g/L, the hydrogen peroxide of 0.5～1.0g/L, the Triammonium citrate of 3～5g/L; Be that 10～20 ℃, current density are 0.5～1A/dm in liquid temperature
2, electrolytic treatments 20～30min.
8. packaging body according to claim 1, is characterized in that: described LED lamp pearl or LED chip are by wave soldering, reflow soldering, eutectic welding or use electroconductive binder to be connected with metallic circuit.
9. packaging body according to claim 1, is characterized in that: on described high heat conductive insulating layer, be formed with metallic circuit and pad, described LED lamp pearl or LED chip are combined on pad, and described pad and the electric connection of described metallic circuit.
10. packaging body according to claim 1, is characterized in that: described resin insulating barrier is the resin cured matter that contains thermosetting resin, curing agent and inorganic filler.
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| CN201410096052.3A CN103872217B (en) | 2014-03-14 | 2014-03-14 | High-power LED light source packaging body |
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| CN201410096052.3A CN103872217B (en) | 2014-03-14 | 2014-03-14 | High-power LED light source packaging body |
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| CN103872217B CN103872217B (en) | 2016-06-15 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100102344A1 (en) * | 2007-03-01 | 2010-04-29 | Yoshinori Ueji | Led device and illuminating apparatus |
| CN102460750A (en) * | 2009-06-02 | 2012-05-16 | 三菱化学株式会社 | Metal substrate and light source device |
| CN102473829A (en) * | 2009-07-17 | 2012-05-23 | 电气化学工业株式会社 | LED chip assembly, LED package, and manufacturing method of LED package |
| CN102782866A (en) * | 2010-02-01 | 2012-11-14 | 富士胶片株式会社 | Insulating metal substrate and semiconductor device |
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2014
- 2014-03-14 CN CN201410096052.3A patent/CN103872217B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100102344A1 (en) * | 2007-03-01 | 2010-04-29 | Yoshinori Ueji | Led device and illuminating apparatus |
| CN102460750A (en) * | 2009-06-02 | 2012-05-16 | 三菱化学株式会社 | Metal substrate and light source device |
| CN102473829A (en) * | 2009-07-17 | 2012-05-23 | 电气化学工业株式会社 | LED chip assembly, LED package, and manufacturing method of LED package |
| CN102782866A (en) * | 2010-02-01 | 2012-11-14 | 富士胶片株式会社 | Insulating metal substrate and semiconductor device |
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