CN103871841A - Device isolation groove surface repairing method - Google Patents
Device isolation groove surface repairing method Download PDFInfo
- Publication number
- CN103871841A CN103871841A CN201410102240.2A CN201410102240A CN103871841A CN 103871841 A CN103871841 A CN 103871841A CN 201410102240 A CN201410102240 A CN 201410102240A CN 103871841 A CN103871841 A CN 103871841A
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- CN
- China
- Prior art keywords
- oxygen
- flute surfaces
- device isolation
- groove surface
- plasma
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
Abstract
The invention relates to a device isolation groove surface repairing method. The method includes the following steps that firstly, oxygen is subjected to decoupling treatment through plasma to form oxygen radicals; secondly, the oxygen radicals formed in the first step have a reaction with a groove surface to form a DPO to repair flaws of the groove surface. According to the method, the oxygen is subjected to decoupling treatment through the plasma to form the high-energy oxygen radicals, the oxygen radicals have a reaction with a silicon substrate to form the oxide (commonly known as a DPO) to repair the flaws of the groove surface, the temperature needed in the method is low and generally ranges from 300 DEC G to 400 DEG C, and therefore thermal budget is reduced.
Description
Technical field
The present invention relates to a kind of surperficial restorative procedure of device, be specifically related to a kind of method that device isolation flute surfaces is repaired.
Background technology
In very lagre scale integrated circuit (VLSIC), a lot of devices need to be formed on same chip, in order to prevent the electric leakage of each device, need to isolate it.The deep trench isolation (DTI) that isolation technology is generally shallow-trench isolation (STI) and rises recently, because the formation of groove need to be carried out etching to silicon substrate, therefore can cause the damage of silicon substrate, at this moment just need to solve this present situation.Prior art adopts boiler tube to react with silicon substrate under the atmosphere of oxygen, utilizes hot growing silicon oxide to repair damage defect, but it needs very high temperature (800～1050 DEG C), and heat budget is larger.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method that device isolation flute surfaces is repaired under cryogenic conditions.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of method that device isolation flute surfaces is repaired, comprise the following steps,
Step 1, utilizes plasma that oxygen is carried out to decoupling processing, forms oxygen radical;
The invention has the beneficial effects as follows: the present invention utilizes plasma that oxygen is carried out to decoupling combination processing, form the oxygen radical of high energy, react with base silicon, form oxide (be commonly called as DPO: decoupling oxide), repair flute surfaces defect, it is temperature required lower, is generally 300～400 DEG C, has reduced heat budget.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the temperature range that described oxygen radical reacts required with flute surfaces is 300～400 DEG C.
Adopt the beneficial effect of above-mentioned further scheme to be: temperature is 300～400 DEG C, make to repair rapidly flute surfaces defect, better effects if.
Further, described plasma carries out oxygen in the process of decoupling processing, and required chamber pressure is 10～100mT, and the flow of oxygen is 120～330 milliliters of per minutes, and radio-frequency power is 1～3KW.
Adopt the beneficial effect of above-mentioned further scheme to be: chamber pressure is 10～100mT, the flow of oxygen is 120～330 milliliters of per minutes, and radio-frequency power is 1～3KW, makes the oxygen radical that makes purer, more easily makes better effects if.
Brief description of the drawings
Fig. 1 is the flow chart of the method for a kind of device isolation flute surfaces reparation of the present invention;
Fig. 2 is the reparation state diagram of the method for a kind of device isolation flute surfaces reparation of the present invention.
In accompanying drawing, the list of parts of each label representative is as follows:
1, silicon substrate, 2, groove, 3, defect, 4, silicon dioxide repair layer.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of method that device isolation flute surfaces is repaired, first utilize plasma that oxygen is carried out to decoupling processing, obtain oxygen radical, described plasma carries out oxygen in the process of decoupling processing, chamber pressure is that 10～100mT(mT is millitorr), the flow of oxygen is 120～330 milliliters of per minutes, radio-frequency power is 1～3KW; Then oxygen radical is reacted with flute surfaces, form decoupled plasma oxide body, the pasc reaction of oxygen radical and flute surfaces forms silicon dioxide, and the temperature range that described oxygen radical reacts with flute surfaces is 300～400 DEG C; The defect of the silica-filled flute surfaces that the pasc reaction of described oxygen radical and flute surfaces forms, makes its densification smooth, and then reaches the effect of the defect of repairing flute surfaces.Fig. 2 is the reparation state diagram of the method for a kind of device isolation flute surfaces reparation of the present invention, before device isolation groove is not repaired, the defect 3 that exists etching groove to cause in the groove 2 of silicon substrate 1, when the oxygen radical that adopts oxygen decoupling processing to obtain and the silicon on groove 2 surfaces react, form silicon dioxide repair layer 4, repaired the defect 3 on groove 2 surfaces.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (3)
1. the method that device isolation flute surfaces is repaired, is characterized in that: comprises the following steps,
Step 1, utilizes plasma that oxygen is carried out to decoupling processing, forms oxygen radical;
Step 2, the oxygen radical that step 1 is formed reacts with flute surfaces, forms decoupled plasma oxide body, repairs the defect of flute surfaces.
2. the method that a kind of device isolation flute surfaces according to claim 1 is repaired, is characterized in that: described oxygen radical reacts required temperature range with flute surfaces is 300～400 DEG C.
3. the method that a kind of device isolation flute surfaces according to claim 1 and 2 is repaired, it is characterized in that: described plasma carries out oxygen in the process of decoupling processing, required chamber pressure is 10～100mT, the flow of oxygen is 120～330 milliliters of per minutes, and radio-frequency power is 1～3KW.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410102240.2A CN103871841A (en) | 2014-03-19 | 2014-03-19 | Device isolation groove surface repairing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410102240.2A CN103871841A (en) | 2014-03-19 | 2014-03-19 | Device isolation groove surface repairing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103871841A true CN103871841A (en) | 2014-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410102240.2A Pending CN103871841A (en) | 2014-03-19 | 2014-03-19 | Device isolation groove surface repairing method |
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| Country | Link |
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| CN (1) | CN103871841A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992231A (en) * | 2017-04-06 | 2017-07-28 | 厦门三安光电有限公司 | Nitride semiconductor device and preparation method thereof |
| CN110211985A (en) * | 2019-06-20 | 2019-09-06 | 德淮半导体有限公司 | The restorative procedure of semiconductor substrate |
| CN112928132A (en) * | 2021-01-28 | 2021-06-08 | 上海华力集成电路制造有限公司 | Method for enhancing dark current resistance of BSI image sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101770974A (en) * | 2008-12-31 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Method for fabricating shallow-trench isolation structure |
| CN102737846A (en) * | 2011-04-07 | 2012-10-17 | 周旺龙 | Core cladding fixing pillar for internal side of capacitor cover board |
| CN103077883A (en) * | 2013-01-11 | 2013-05-01 | 陆伟 | Method for repairing surface defect of wafer |
| CN103545243A (en) * | 2013-11-13 | 2014-01-29 | 上海华力微电子有限公司 | Method for forming shallow trench isolation structure |
-
2014
- 2014-03-19 CN CN201410102240.2A patent/CN103871841A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101770974A (en) * | 2008-12-31 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Method for fabricating shallow-trench isolation structure |
| CN102737846A (en) * | 2011-04-07 | 2012-10-17 | 周旺龙 | Core cladding fixing pillar for internal side of capacitor cover board |
| CN103077883A (en) * | 2013-01-11 | 2013-05-01 | 陆伟 | Method for repairing surface defect of wafer |
| CN103545243A (en) * | 2013-11-13 | 2014-01-29 | 上海华力微电子有限公司 | Method for forming shallow trench isolation structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992231A (en) * | 2017-04-06 | 2017-07-28 | 厦门三安光电有限公司 | Nitride semiconductor device and preparation method thereof |
| CN106992231B (en) * | 2017-04-06 | 2019-05-21 | 厦门三安光电有限公司 | Nitride semiconductor device and preparation method thereof |
| CN110211985A (en) * | 2019-06-20 | 2019-09-06 | 德淮半导体有限公司 | The restorative procedure of semiconductor substrate |
| CN112928132A (en) * | 2021-01-28 | 2021-06-08 | 上海华力集成电路制造有限公司 | Method for enhancing dark current resistance of BSI image sensor |
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Application publication date: 20140618 |