CN103869624A - Photoresist nozzle, and method for determining photoresist spraying center by utilizing it - Google Patents
Photoresist nozzle, and method for determining photoresist spraying center by utilizing it Download PDFInfo
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- CN103869624A CN103869624A CN201210544221.6A CN201210544221A CN103869624A CN 103869624 A CN103869624 A CN 103869624A CN 201210544221 A CN201210544221 A CN 201210544221A CN 103869624 A CN103869624 A CN 103869624A
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Abstract
The invention discloses a photoresist nozzle. A fiber is arranged in the nozzle, the external of the nozzle is provided with a laser light source, the side surface of the nozzle is provided with a groove, and the fiber is leaded out through the rove and is connected with the laser light source. The invention also discloses a method for determining the photoresist spraying center by utilizing the photoresist nozzle. The method comprises the following steps: 1, making an aligning mark in the center position of a wafer; 2, conveying the wafer to a coating process unit; 3, arranging the photoresist nozzle, and moving the photoresist nozzle to a position over the wafer; and 4, turning on the laser light source, and adjusting the position of the photoresist nozzle to make a laser light spot positioned in the center of the wafer aligning mark. The aligning mark of the center of the wafer and the laser light spot emitted by the nozzle are utilized to determine the photoresist spraying center position, so the method is efficient and efficient.
Description
Technical field
The present invention relates to integrated circuit and manufacture field, particularly relate to a kind of photoresist nozzle, and utilize this nozzle to determine the method for jet-coating photoresit center.
Background technology
In the time of crystal column surface coating photoresist, whether the spraying position of photoresist has a great impact for the thickness after whole film forming and homogeneity in the center of wafer.At present, the method that adjustment photoresist shoots out center is mainly that photoresist nozzle is aimed at the vacuum cup mouth of coater unit, as shown in Figure 1.The problem of this method of adjustment mainly contain following some:
1, the size of the size of nozzle and vacuum cup mouth not quite identical, it is limited that center precision is got by institute.
2, be in course of adjustment and easily cause the damage of nozzle.
3, cannot directly on wafer, reflect and adjust effect, efficiency be poor.
Summary of the invention
One of the technical problem to be solved in the present invention is to provide a kind of photoresist nozzle, and it can accurately locate jet-coating photoresit center.
For solving the problems of the technologies described above, photoresist nozzle of the present invention, the inside of nozzle is provided with optical fiber, outside with laser source, the groove at side surface of nozzle, optical fiber is drawn via groove, is connected with laser source.
Two of the technical problem to be solved in the present invention is to provide a kind ofly utilizes above-mentioned photoresist nozzle to determine the method for jet-coating photoresit center.
For solving the problems of the technologies described above, definite method of jet-coating photoresit of the present invention center, comprises the following steps:
1) by exposure, etching, produce alignment mark in the center of wafer;
2) wafer is sent to coating process unit;
3) described photoresist nozzle is installed on jet-coating photoresit device, moves to wafer top;
4) open laser source, adjust the position of photoresist nozzle, make to project radium-shine hot spot on wafer and be positioned at the center of wafer alignment mark.
The present invention, taking the alignment mark of crystal circle center as location reference, utilizes nozzle to project the radium-shine hot spot of crystal column surface, and the spraying position of photoresist is adjusted to crystal circle center, and this method of adjustment compared with the conventional method, has the following advantages and beneficial effect:
1. the center alignment tab of wafer uses litho machine to determine, therefore precision is higher, makes determining of jet-coating photoresit center more accurate;
2. center can directly be reflected on wafer, and therefore regulated efficiency is high;
3. after adjusting, gain plain nozzle and carry out jet-coating photoresit, therefore reduced the damage probability of photoresist nozzle.
Brief description of the drawings
Fig. 1 is the conventional method schematic diagram of adjusting jet-coating photoresit center.
Fig. 2 is the photoresist nozzle schematic diagram of the embodiment of the present invention.
Fig. 3 is the wafer schematic diagram of the center band alignment mark of the embodiment of the present invention.
Fig. 4 is the photoresist nozzle of the embodiment of the present invention scheme of installation on spraying equipment.
Fig. 5 is the jet-coating photoresit location regulation method schematic diagram of the embodiment of the present invention.
Fig. 6 is the schematic diagram that the photoresist nozzle of the embodiment of the present invention penetrates laser light.
Fig. 7 is that jet-coating photoresit center is adjusted when complete, the relative position of radium-shine luminous point and wafer alignment mark.
Embodiment
Understand for technology contents of the present invention, feature and effect being had more specifically, existing in conjunction with illustrated embodiment, details are as follows:
The photoresist nozzle of the present embodiment, its inside is provided with optical fiber, outside with laser source; The groove at side surface of nozzle, is connected with laser source for drawing optical fiber, as shown in Figure 2.Laser source can external gauge tap, for controlling the opening and closing of laser source.
Before crystal column surface spraying photoresist, first, accurately locate the center of wafer with litho machine, then by exposure, etching, form a criss-cross alignment mark in the center of wafer, as shown in Figure 3.Then,, with the nozzle substituted common photoresist nozzle of the above-mentioned photoresist with laser source, be installed on jet-coating photoresit device, as shown in Figure 4.The wafer of above-mentioned center band alignment mark is sent to coating process unit simultaneously, and the photoresist nozzle with laser source is moved to the top of this wafer, as shown in Figure 5, now, the height of photoresist nozzle distance crystal column surface is about 4 millimeters.Finally, open laser source, photoresist nozzle penetrates laser light, as shown in Figure 6.The laser light that nozzle penetrates projects on wafer, presents red luminous point, according to the relative position between red luminous point and wafer alignment mark, position to photoresist nozzle is adjusted, red luminous point is adjusted to the center of wafer alignment mark, i.e. right-angled intersection point, as shown in Figure 7.So far, jet-coating photoresit center is adjusted complete, and the photoresist nozzle with laser source is unloaded, and changes common photoresist nozzle, can carry out jet-coating photoresit to wafer.
Claims (3)
1. a photoresist nozzle, is characterized in that, the inside of nozzle is provided with optical fiber, outside with laser source, the groove at side surface of nozzle, and optical fiber is drawn via groove, is connected with laser source.
2. utilize the photoresist nozzle of claim 1 to determine the method at jet-coating photoresit center, it is characterized in that, step comprises:
1) by exposure, etching, produce alignment mark in the center of wafer;
2) wafer is sent to coating process unit;
3) described photoresist nozzle is installed on jet-coating photoresit device, moves to wafer top;
4) open laser source, adjust the position of photoresist nozzle, make to project radium-shine hot spot on wafer and be positioned at the center of wafer alignment mark.
3. method according to claim 2, is characterized in that, step 3), and the height of described photoresist nozzle distance crystal column surface is 4 millimeters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210544221.6A CN103869624A (en) | 2012-12-14 | 2012-12-14 | Photoresist nozzle, and method for determining photoresist spraying center by utilizing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210544221.6A CN103869624A (en) | 2012-12-14 | 2012-12-14 | Photoresist nozzle, and method for determining photoresist spraying center by utilizing it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103869624A true CN103869624A (en) | 2014-06-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210544221.6A Pending CN103869624A (en) | 2012-12-14 | 2012-12-14 | Photoresist nozzle, and method for determining photoresist spraying center by utilizing it |
Country Status (1)
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| CN (1) | CN103869624A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803241A (en) * | 2017-04-28 | 2018-11-13 | 上海微电子装备（集团）股份有限公司 | Light-sensitive lacquer sprayer alignment device, method and photoresist coating unit |
| CN109732488A (en) * | 2019-02-15 | 2019-05-10 | 思必恩金属（昆山）有限公司 | The testing calibration method of spray gun posture in shot-peening operation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009022822A (en) * | 2007-07-17 | 2009-02-05 | Tokyo Ohka Kogyo Co Ltd | Coating apparatus and coating method |
| CN101894827A (en) * | 2009-05-19 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | Test wafer for gluing and edge cleaning detection |
| CN102033423A (en) * | 2009-09-28 | 2011-04-27 | 中芯国际集成电路制造(上海)有限公司 | Device and method for calibrating photoetching tool |
| US20110183271A1 (en) * | 2010-01-28 | 2011-07-28 | Samsung Mobile Display Co., Ltd. | Method of manufacturing mask for depositing thin film |
| CN102162175A (en) * | 2011-01-05 | 2011-08-24 | 厦门大学 | Laser-guided electrospinning direct writing device |
-
2012
- 2012-12-14 CN CN201210544221.6A patent/CN103869624A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009022822A (en) * | 2007-07-17 | 2009-02-05 | Tokyo Ohka Kogyo Co Ltd | Coating apparatus and coating method |
| CN101894827A (en) * | 2009-05-19 | 2010-11-24 | 中芯国际集成电路制造(上海)有限公司 | Test wafer for gluing and edge cleaning detection |
| CN102033423A (en) * | 2009-09-28 | 2011-04-27 | 中芯国际集成电路制造(上海)有限公司 | Device and method for calibrating photoetching tool |
| US20110183271A1 (en) * | 2010-01-28 | 2011-07-28 | Samsung Mobile Display Co., Ltd. | Method of manufacturing mask for depositing thin film |
| CN102162175A (en) * | 2011-01-05 | 2011-08-24 | 厦门大学 | Laser-guided electrospinning direct writing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803241A (en) * | 2017-04-28 | 2018-11-13 | 上海微电子装备（集团）股份有限公司 | Light-sensitive lacquer sprayer alignment device, method and photoresist coating unit |
| CN109732488A (en) * | 2019-02-15 | 2019-05-10 | 思必恩金属（昆山）有限公司 | The testing calibration method of spray gun posture in shot-peening operation |
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Application publication date: 20140618 |