CN103868850A - In-situ optical detection device - Google Patents
In-situ optical detection device Download PDFInfo
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- CN103868850A CN103868850A CN201210545135.7A CN201210545135A CN103868850A CN 103868850 A CN103868850 A CN 103868850A CN 201210545135 A CN201210545135 A CN 201210545135A CN 103868850 A CN103868850 A CN 103868850A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 132
- 238000001514 detection method Methods 0.000 title claims abstract description 70
- 238000011065 in-situ storage Methods 0.000 title abstract description 11
- 238000012360 testing method Methods 0.000 claims abstract description 53
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 15
- 238000001069 Raman spectroscopy Methods 0.000 claims description 18
- 238000000103 photoluminescence spectrum Methods 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 5
- 239000013307 optical fiber Substances 0.000 claims description 4
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 19
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- 238000011160 research Methods 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
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- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention discloses an in-situ optical detection device, which is applied to atomic layer deposition equipment and comprises an optical test system and an optical lens matching assembly, wherein the optical test system is arranged outside a reaction chamber of the atomic layer deposition equipment; the optical test system is connected with the optical lens extension tube through the optical component to form a test light path; the lens cavity is fixed on the side wall of the reaction chamber through the first flange assembly. The invention can carry out optical nondestructive detection and can control the mode of the initial growth stage of the film with the assistance of optical in-situ detection. Meanwhile, in an atomic layer deposition system, a new artificially modified semiconductor material can be further designed and developed, and a powerful theoretical and experimental basis is provided for the preparation of various high-quality and specific two-dimensional films.
Description
Technical field
The present invention relates to technique for atomic layer deposition field, be specifically related to a kind of original position optical detection apparatus.
Background technology
The preparation of high-quality thin film material is research physical property and prerequisite and the basis of exploring application.Ald (ALD) technology is one of current state-of-the-art film deposition techniques, its unique depositional mode (monatomic layer by layer deposition) makes the film of preparation have very large improvement at the aspect of performance such as homogeneity, roughness, except growth rate is lower, all the other aspects are all better than other depositional modes.Ald (ALD) can be realized atomic layer level thickness control simply accurately, can also realize the accurate control to film defects, doping, and then controls being with of film.Along with the development of microelectric technique, the demand of material is reduced to nanometer scale, the dark depth-width ratio demand of device, highlights ALD advantage day by day simultaneously.
On the other hand, Detection & Controling are eyes and the both hands in equipment R&D mode, have become technical foundation and ability indispensable in material science research.But the reaction mechanism of ALD, particularly in the film at film forming initial stage and the mechanism of action and the reaction kinetics of substrate and interlayer adsorption reaction, there is the blank of not explored in suitable in situ detection technology for want of always.
Summary of the invention
The object of the present invention is to provide a kind of original position optical detection apparatus, can in ALD system film growth process, carry out in real time original position optical detection.
In order to achieve the above object, the technical solution used in the present invention is:
A kind of original position optical detection apparatus, be applied to atomic layer deposition apparatus, comprise optic testing system and optical lens matching component, described optic testing system is arranged on the reaction chamber outside of atomic layer deposition apparatus, described optical lens matching component comprises camera lens chamber and be arranged on optical lens, corner assembly and the optical lens extension tube in described camera lens chamber, and described corner assembly two ends connect respectively described optical lens and described optical lens extension tube; Described optic testing system is connected with described optical lens extension tube by optical module, forms optical system for testing; Described camera lens chamber is fixed on the sidewall of described reaction chamber by the first flange assembly.
In such scheme, described optical lens is high precision telephoto lens.
In such scheme, described optical lens matching component also comprises corrugated tube and telescopic component, described corrugated tube is arranged between described camera lens chamber and described the first flange assembly, described telescopic component is arranged on the outer end of described optical lens extension tube, and described corrugated tube correspondence in the time that described telescopic component carries out telescopic displacement is carried out synchronization telescope.
In such scheme, described optical lens matching component also comprises lens protection valve, and described lens protection valve is fixed on described camera lens chamber by the second flange.
In such scheme, described optic testing system comprises light source, collection system, beam splitting system and detection system; Described light source, for sending incident optical signal; Described collection system, for described incident optical signal is incident to testing sample surface, the multiple measured signals such as scattered signal, refraction model, reflected signal are sent on described testing sample surface afterwards; Described beam splitting system, for the interference optical information of measured signal described in filtering; Described detection system, for detecting the measured signal of catching.
In such scheme, described original position optical detection apparatus also comprises optical table, for placing optic testing system.
In such scheme, described original position optical detection apparatus detection method used is the detection method of Raman, photoluminescence spectra, angle resolved photoelectron spectroscope.
In such scheme, described optical module is optical fiber.
Compared with prior art scheme, the beneficial effect that the technical solution used in the present invention produces is as follows:
While using the present invention to carry out original position optical detection, with testing sample non-direct contact, can carry out optical non-destructive detection.And by the present invention, can be under the assisting a ruler in governing a country of optics in situ detection the pattern in special initial growth stage of control film growth, with physical and chemical process and membrane formation mechanism in this clear and definite ALD growth course.Meanwhile, in atomic layer deposition system, artificial modification's semiconductor material that further design and development is new, for various high-quality, have the preparation of the two-dimensional film of specific performance, provides strong theory and experiment basis.
Accompanying drawing explanation
The structural representation of the original position optical detection apparatus that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 is the light path schematic diagram of the original position optical detection of optic testing system in the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is described in detail.
As shown in Figure 1, the present embodiment provides a kind of original position optical detection apparatus, be applied to atomic layer deposition apparatus, comprise optic testing system 12 and optical lens matching component, optic testing system 12 is arranged on reaction chamber 2 outsides of atomic layer deposition apparatus, optical lens matching component comprises camera lens chamber 7 and the optical lens 8, corner assembly 3 and the optical lens extension tube 10 that are arranged on camera lens chamber, and corner assembly 3 two ends connect respectively optical lens 8 and optical lens extension tube 10; Camera lens chamber 7 is fixed on the sidewall of reaction chamber 2 by the first flange assembly 11.Optic testing system 12 is connected with optical lens extension tube 10 by optical module, forms optical system for testing; Wherein, optical lens is high precision telephoto lens, can be for the harmless optical detection of noncontact leaves enough work spaces in ALD reaction chamber; Corner assembly 3 and optical lens extension tube 10, go deep into reaction chamber inside for detection of light path, testing sample surface film to reaction chamber central authorities carries out optical detection, and also can avoid the reduction that signal disturbs, light path changes the surface optics signal collection efficiency causing; Optical module is optical fiber etc.
In the present embodiment, described optical lens matching component also comprises corrugated tube 9 and telescopic component 13, corrugated tube 9 is arranged between camera lens chamber 7 and the first flange assembly 11, telescopic component 13 is arranged on the outer end of optical lens extension tube 10, and corrugated tube 9 correspondence in the time that telescopic component 13 carries out telescopic displacement is carried out synchronization telescope.Corrugated tube 9 and telescopic component 13 can, in the time treating survey sample detection, carry out multiple spot pointwise detection along the test trails 6 in Fig. 1, in order to obtain the homogeneity information at sample periphery and center.
In the present embodiment, described optical lens matching component also comprises lens protection valve 4, and lens protection valve 4 is fixed on camera lens chamber 7 by the second flange 15.Lens protection valve 4 is can switch optical lens protective valve; in order to guarantee optical lens matching component with the supporting process of ALD reaction chamber 2 in the vacuum tightness of reaction chamber, and prevent contamination and the pollution to optical lens 8 of the remaining addition product of deposition in reaction chamber 2.
In the present embodiment, described optic testing system 12 comprises light source, collection system, beam splitting system and detection system; Described light source, for sending incident optical signal; Described collection system, for incident optical signal being incident to testing sample 5 surfaces, the multiple measured signals such as scattered signal, refraction model, reflected signal are sent on described testing sample 5 surfaces afterwards; Described beam splitting system, for the interference optical information of measured signal described in filtering; Described detection system, for detecting the measured signal of catching.Wherein detect the conventional concentration of energy of light source used, laser that power density is high; Collection system is made up of lens combination; Beam splitting system adopts grating or notch filtering light sheet to disturb optical information in conjunction with grating with filtering Rayleigh scattering and parasitic light etc., and comprises and light splitting function; Detection system adopts the optical detection assemblies such as photomultiplier detector, semiconductor array detecting device or multichannel charge-coupled device (CCD).The light path schematic diagram of the original position optical detection of optic testing system 12 as shown in Figure 2, wherein light source 121 sends incident optical signal 122, be the lens combination in collection system through the optical filter 123(in optical lens extension tube 10 and corner assembly 3) be incident to testing sample 5 surfaces, transmitted light is sent on testing sample 5 surfaces afterwards, reflected light, the multiple light path 126 to be measured such as scattered light, this light path 126 to be measured is returned via original physical light path, after the beam splitting system such as optical filter 123 and grating 124 in corner assembly 3 and optical lens extension tube 10, caught by charge-coupled image sensor 127, obtain test signal.
In the present embodiment, described original position optical detection apparatus also comprises optical table 14, for placing optic testing system 12.Optical table 14 has the anti-trembling functions such as air floating table, can guarantee the vibration interference in optic test.
In the present embodiment, described original position optical detection apparatus detection method used is the detection method of Raman (Raman), photoluminescence spectra (PL), angle resolved photoelectron spectroscope (ARPES).Raman (Raman) optical detection, other low frequency modes in the lattice in research film forming procedure and vibration mode, rotary mode and this system of molecule, obtain ALD system membrane formation mechanism information with this.In situ photoluminescence spectrum (PL) is a kind of method of detecting material electronic structure, prepares the detection of the performances such as band gap detection, impurity levels and defects detection, the multiple mechanism of membraneous material for ALD.Angle resolved photoelectron spectroscope (ARPES) detects Fermi level topology surface state, to observing and control by the band structure of the artificial design of ALD growth crystalline network film.
Take the optical detection of Raman (Raman) original position as example, the optical detection of Raman (Raman) original position can be carried out following in situ detection in the system being equipped with:
(1) send the incident optical signals 122 such as infrared, ultraviolet, visible ray by being arranged on light source 121 in optic testing system 12;
(2) this incident optical signal 122 via the optical lens extension tube 10 in optical fiber and camera lens chamber 7, via corner assembly 3 change optical path direction, again via the light path system of the optical path component such as optical lens 8 composition, be incident to testing sample 5 surfaces;
(3) scattered light signal 126 is sent on testing sample 5 surfaces afterwards, this scattered light signal is by the optical lens 8 in camera lens chamber 7, corner assembly 3 and optical lens extension tube 10 original optical path returning parts, catch via optical detection assemblies such as the photomultiplier detector in optic testing system 12, semiconductor array detecting device or multichannel charge-coupled image sensors 127, obtain detection signal.
The present invention is equipped with optical table in atomic layer deposition system, optic testing system, optical lens matching components etc. are for the assembly of optical detection, can carry out thin film deposition in ALD system time, carry out the original position optical detections such as Raman (Raman), obtain thus the reaction mechanism information of ALD, particularly in the film at film forming initial stage and the mechanism of action and the reaction kinetics information of substrate and interlayer adsorption reaction, for various high-quality, there is the preparation of the ALD membraneous material of specific performance, strong theory and experiment basis is provided.When the pick-up unit that the embodiment of the present invention is provided is applied in atomic layer deposition system, the step of preparing film is as follows:
(1) substrate is carried out after surface activation process, be placed on ALD reaction chamber heating plate and off-response chamber 2, after modulation ALD reaction vacuum and temperature conditions, start thin film deposition reaction;
(2) the first precursor source is passed into reaction chamber 2 from air intake opening 1, the first precursor source is adsorbed in after substrate, starts deposition for the first time;
(3) purge reaction chamber to reaction chamber and recover base vacuum;
(4) the second precursor source is passed into reaction chamber, the second precursor source is adsorbed in after substrate, starts deposition for the second time;
(5) purge reaction chamber to reaction chamber and recover base vacuum;
(6) carry out original position optical detection;
(7) before adjustment deposit surface reactivity extremely passes into precursor source for the first time;
(8) be cycled to repeat step (2) to step (7).
In the time that cycle index reaches the predetermined optical test working days, the optic test working days of choosing in this step are carried out in-situ Raman test, and the cycle index wherein reaching is 1 time to 200 times.Wherein, testing light source adopts the LASER Light Source of wavelength 100nm to 700nm, is incident to after testing sample, and original optical path obtains diffuse optical signal, gathers Raman spectral information by detection system, obtains ALD system membrane formation mechanism information with this.
When the pick-up unit that the embodiment of the present invention provides is applied in atomic layer deposition system, prepares film and can also adopt following steps:
(1) substrate is carried out be placed on ALD reaction chamber heating plate and close reaction chamber 2 after surface activation process, after modulation ALD reaction vacuum and temperature conditions, start thin film deposition reaction;
(2) the first precursor source is passed into reaction chamber 2 from air intake opening 1, the first precursor source is adsorbed in after substrate, starts deposition for the first time;
(3) purge reaction chamber to reaction chamber and recover base vacuum;
(4) carry out original position optical detection;
(5) the second precursor source is passed into reaction chamber, the second precursor source is adsorbed in after substrate, starts deposition for the second time;
(6) purge reaction chamber to reaction chamber and recover base vacuum;
(7) before adjustment deposit surface reactivity extremely passes into precursor source for the first time;
(8) be cycled to repeat step (2) to step (7).
In the time that cycle index reaches the predetermined optical test working days, the optic test working days of choosing in this step are carried out in-situ Raman test, and the cycle index wherein reaching is 1 time to 200 times.Wherein, testing light source adopts the LASER Light Source of wavelength 100nm to 700nm, is incident to after testing sample, and original optical path obtains diffuse optical signal, gathers Raman spectral information by detection system, obtains ALD system membrane formation mechanism information with this.
The present invention can be in ALD system film growth process, by optical detection real-time in-situ monitorings such as Raman (Raman), photoluminescence spectra (PL), angle resolved photoelectron spectroscopes (ARPES).Optical detection and testing sample non-direct contact, can carry out optical non-destructive detection.And by the present invention can be under the assisting a ruler in governing a country of optics in situ detection the pattern in control film growth special initial growth stage, with physical and chemical process and membrane formation mechanism in this clear and definite ALD growth course.Meanwhile, in this original position optical detection atomic layer deposition system, artificial modification's semiconductor material that further design and development is new, for various high-quality, have the preparation of the two-dimensional film of specific performance, provides strong theory and experiment basis.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
1. an original position optical detection apparatus, be applied to atomic layer deposition apparatus, it is characterized in that: comprise optic testing system and optical lens matching component, described optic testing system is arranged on the reaction chamber outside of atomic layer deposition apparatus, described optical lens matching component comprises camera lens chamber and be arranged on optical lens, corner assembly and the optical lens extension tube in described camera lens chamber, and described corner assembly two ends connect respectively described optical lens and described optical lens extension tube; Described optic testing system is connected with described optical lens extension tube by optical module, forms optical system for testing; Described camera lens chamber is fixed on the sidewall of described reaction chamber by the first flange assembly.
2. original position optical detection apparatus as claimed in claim 1, is characterized in that: described optical lens is high precision telephoto lens.
3. original position optical detection apparatus as claimed in claim 1, it is characterized in that: described optical lens matching component also comprises corrugated tube and telescopic component, described corrugated tube is arranged between described camera lens chamber and described the first flange assembly, described telescopic component is arranged on the outer end of described optical lens extension tube, and described corrugated tube correspondence in the time that described telescopic component carries out telescopic displacement is carried out synchronization telescope.
4. original position optical detection apparatus as claimed in claim 1, is characterized in that: described optical lens matching component also comprises lens protection valve, and described lens protection valve is fixed on described camera lens chamber by the second flange.
5. original position optical detection apparatus as claimed in claim 1, is characterized in that: described optic testing system comprises light source, collection system, beam splitting system and detection system; Described light source, for sending incident optical signal; Described collection system, for incident optical signal being incident to testing sample surface, multiple measured signal is sent on described testing sample surface afterwards; Described beam splitting system, for the interference optical information of measured signal described in filtering; Described detection system, for detecting the measured signal of catching.
6. original position optical detection apparatus as claimed in claim 1, is characterized in that: described original position optical detection apparatus also comprises optical table, for placing optic testing system.
7. original position optical detection apparatus as claimed in claim 1, is characterized in that: described original position optical detection apparatus detection method used is the detection method of Raman, photoluminescence spectra, angle resolved photoelectron spectroscope.
8. original position optical detection apparatus as claimed in claim 1, is characterized in that: described optical module is optical fiber.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210545135.7A CN103868850B (en) | 2012-12-14 | In-situ optical detection device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210545135.7A CN103868850B (en) | 2012-12-14 | In-situ optical detection device |
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| Publication Number | Publication Date |
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| CN103868850A true CN103868850A (en) | 2014-06-18 |
| CN103868850B CN103868850B (en) | 2016-11-30 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104458584A (en) * | 2014-12-16 | 2015-03-25 | 苏州谱道光电科技有限公司 | Sample chamber of sample analysis device |
| CN110726682A (en) * | 2019-09-26 | 2020-01-24 | 山东大学 | In-situ online reflection optical measurement system and method |
| CN110923674A (en) * | 2019-12-13 | 2020-03-27 | 南通普朗克石墨烯科技有限公司 | Raman spectrometer monitoring feedback type chemical vapor deposition system and application |
| CN111307715A (en) * | 2020-03-30 | 2020-06-19 | 深圳大学 | In-situ test device for low-dimensional semiconductor interface regulation |
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| JPH06247398A (en) * | 1993-02-22 | 1994-09-06 | Mitsubishi Heavy Ind Ltd | Method for detecting gas leak |
| CN101013079A (en) * | 2007-02-07 | 2007-08-08 | 浙江大学 | Small-sized material digitalized detecting and grading apparatus |
| CN201159723Y (en) * | 2008-03-07 | 2008-12-03 | 南京华显高科有限公司 | Material performance measurement system for plasma display screen protective film material |
| CN102590156A (en) * | 2012-02-03 | 2012-07-18 | 中国科学院化学研究所 | In-situ integrated multi-spectrum measurement system and detection method |
| CN102686973A (en) * | 2010-01-14 | 2012-09-19 | 普雷茨特激光技术有限公司 | Monitoring device and method for in situ measuring wafer thicknesses for monitoring a thinning of semiconductor wafers and thinning device comprising a wet etching unit and a monitoring device |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06247398A (en) * | 1993-02-22 | 1994-09-06 | Mitsubishi Heavy Ind Ltd | Method for detecting gas leak |
| CN101013079A (en) * | 2007-02-07 | 2007-08-08 | 浙江大学 | Small-sized material digitalized detecting and grading apparatus |
| CN201159723Y (en) * | 2008-03-07 | 2008-12-03 | 南京华显高科有限公司 | Material performance measurement system for plasma display screen protective film material |
| CN102686973A (en) * | 2010-01-14 | 2012-09-19 | 普雷茨特激光技术有限公司 | Monitoring device and method for in situ measuring wafer thicknesses for monitoring a thinning of semiconductor wafers and thinning device comprising a wet etching unit and a monitoring device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104458584A (en) * | 2014-12-16 | 2015-03-25 | 苏州谱道光电科技有限公司 | Sample chamber of sample analysis device |
| CN110726682A (en) * | 2019-09-26 | 2020-01-24 | 山东大学 | In-situ online reflection optical measurement system and method |
| CN110923674A (en) * | 2019-12-13 | 2020-03-27 | 南通普朗克石墨烯科技有限公司 | Raman spectrometer monitoring feedback type chemical vapor deposition system and application |
| CN111307715A (en) * | 2020-03-30 | 2020-06-19 | 深圳大学 | In-situ test device for low-dimensional semiconductor interface regulation |
| CN111307715B (en) * | 2020-03-30 | 2023-01-17 | 深圳大学 | In-situ test device for low-dimensional semiconductor interface regulation |
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