CN103855233A - 一种硅凝胶双面双玻璃太阳能电池组件 - Google Patents

一种硅凝胶双面双玻璃太阳能电池组件 Download PDF

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CN103855233A
CN103855233A CN201210493225.6A CN201210493225A CN103855233A CN 103855233 A CN103855233 A CN 103855233A CN 201210493225 A CN201210493225 A CN 201210493225A CN 103855233 A CN103855233 A CN 103855233A
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double
silicon gel
glass
solar
photovoltaic
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邱文凯
李立
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NINGXIA YINXIANG ENERGY PHOTOVOLTAIC EQUIPMENT MANUFACTURING Co Ltd
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NINGXIA YINXIANG ENERGY PHOTOVOLTAIC EQUIPMENT MANUFACTURING Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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  • Photovoltaic Devices (AREA)

Abstract

本发明涉及一种硅凝胶双面双玻璃太阳能电池组件。其特点是：由依次叠加的正面光伏玻璃(5)、正面双组份硅凝胶层(6)、双面太阳能电池片组(3)、背面双组份硅凝胶层(7)和背面光伏玻璃(4)组成。本发明是采用具有两面可同时发电的双面晶体硅电池片生产的太阳能电池组件，可在同等单位面积下的太阳能光伏组件提高转换效率15％以上。本发明的太阳能电池组件采用双组份硅凝胶来替代现有EVA封装材料，可缩短电池组件的使用寿命和能量计算寿命差异，从而提高光伏电池组件的使用寿命。采用隔热性双组份硅凝胶可使太阳能光伏电池组件的工作温度比环境温度低4～6℃，将有效的降低太阳能电池组件工作温度，提高转换效率。

Description

一种硅凝胶双面双玻璃太阳能电池组件
技术领域
本发明涉及一种硅凝胶双面双玻璃太阳能电池组件
背景技术
目前常规晶硅太阳能电池组件是由光伏玻璃-EVA胶膜-单面晶硅电池片-EVA胶膜-背膜和外加铝合金边框构成，太阳能电池组件只接受正面的太阳光照，从而有部分漫反射无法利用，单位面积下降低了太阳能电池组件的发电效率；同时，太阳能电池组件在接受太阳光照射时约20％的光能用来发电，除不到10％的光能被反射外，剩余70％的光能转化成为热能。由于太阳能电池组件自身散热有限，太阳能电池组件的温度会上升，尤其在炎热的夏天，太阳能电池组件的温度最高可上升至70℃，根据晶硅太阳能电池的温度特性，温度每升高一度，组件的功率损失0.45％左右，与标准测试条件下的功率相比，最高功率损失可达20％。
因此当组件温度较高时，除实际发电功率严重下降外，同时也会加速组件EVA封装胶膜的老化，严重影响太阳能电池组件的效率和使用寿命，进而采用新型惰性双组份硅凝胶作为太阳能光伏组件的封装材料，由此提高太阳能电池组件的效率和使用寿命。
发明内容
本发明的目的是提供一种硅凝胶双面双玻璃太阳能电池组件，在同等单位面积下能够使太阳能光伏组件提高转换效率15％以上。
一种硅凝胶双面双玻璃太阳能电池组件，其特别之处在于：由依次叠加的正面光伏玻璃、正面双组份硅凝胶层、双面太阳能电池片组、背面双组份硅凝胶层和背面光伏玻璃组成。
其中还包括边框，在该边框内开有两个槽从而在一个槽内夹持正面光伏玻璃和背面光伏玻璃，而在另一个槽内安装接线盒，该接线盒与双面太阳能电池片组的公共接线端电连接。
其中边框采用铝合金材质。
本发明是采用具有两面可同时发电的双面晶体硅电池片生产的太阳能电池组件，可在同等单位面积下的太阳能光伏组件提高转换效率15％以上。本发明的太阳能电池组件采用双组份硅凝胶来替代现有EVA封装材料，可缩短电池组件的使用寿命和能量计算寿命差异，从而提高光伏电池组件的使用寿命。采用隔热性双组份硅凝胶可使太阳能光伏电池组件的工作温度比环境温度低4～6℃，将有效的降低太阳能电池组件工作温度，提高转换效率。
附图说明
附图1为本发明的结构示意图。
具体实施方式
如图1所示，本发明是一种硅凝胶双面双玻璃太阳能电池组件，由依次叠加的正面光伏玻璃5、正面双组份硅凝胶层6、双面太阳能电池片组3、背面双组份硅凝胶层7和背面光伏玻璃4组成。其中还包括边框1，该边框1采用铝合金材质。在该边框1内开有两个槽从而在一个槽内夹持正面光伏玻璃5和背面光伏玻璃4，而在另一个槽内安装接线盒2，该接线盒2与双面太阳能电池片组3的公共接线端电连接。

Claims (3)

1.一种硅凝胶双面双玻璃太阳能电池组件，其特征在于：由依次叠加的正面光伏玻璃(5)、正面双组份硅凝胶层(6)、双面太阳能电池片组(3)、背面双组份硅凝胶层(7)和背面光伏玻璃(4)组成。
2.如权利要求1所述的一种硅凝胶双面双玻璃太阳能电池组件，其特征在于：其中还包括边框(1)，在该边框(1)内开有两个槽从而在一个槽内夹持正面光伏玻璃(5)和背面光伏玻璃(4)，而在另一个槽内安装接线盒(2)，该接线盒(2)与双面太阳能电池片组(3)的公共接线端电连接。
3.如权利要求2所述的一种硅凝胶双面双玻璃太阳能电池组件，其特征在于：其中边框(1)采用铝合金材质。
CN201210493225.6A 2012-11-28 2012-11-28 一种硅凝胶双面双玻璃太阳能电池组件 Pending CN103855233A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112541152A (zh) * 2020-10-10 2021-03-23 天合光能股份有限公司 双面光伏组件工作温度的计算方法
US12015373B1 (en) 2022-12-22 2024-06-18 Clearvue Technologies Ltd Window unit for a building or structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020168793A1 (en) * 2001-05-10 2002-11-14 Yoshihiro Izumi Composite active-matrix substrates, methods for manufacturing same, and electromagnetic wave capturing devices
CN102007603A (zh) * 2008-03-14 2011-04-06 陶氏康宁公司 光伏电池模件及其形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020168793A1 (en) * 2001-05-10 2002-11-14 Yoshihiro Izumi Composite active-matrix substrates, methods for manufacturing same, and electromagnetic wave capturing devices
CN102007603A (zh) * 2008-03-14 2011-04-06 陶氏康宁公司 光伏电池模件及其形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112541152A (zh) * 2020-10-10 2021-03-23 天合光能股份有限公司 双面光伏组件工作温度的计算方法
CN112541152B (zh) * 2020-10-10 2024-03-22 天合光能股份有限公司 双面光伏组件工作温度的计算方法
US12015373B1 (en) 2022-12-22 2024-06-18 Clearvue Technologies Ltd Window unit for a building or structure

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