CN103855044B - A kind of method adding redundant pattern - Google Patents
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- CN103855044B CN103855044B CN201410125546.XA CN201410125546A CN103855044B CN 103855044 B CN103855044 B CN 103855044B CN 201410125546 A CN201410125546 A CN 201410125546A CN 103855044 B CN103855044 B CN 103855044B
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Abstract
The invention provides a kind of method adding redundant pattern, including: domain is divided into the subregion of some same sizes, calculates the original density value of every sub regions；Subregion is divided into some groups, original density is worth same or like subregion and is divided into one group；The group of selection redundant pattern to be added；According to density value, calculate the size of the redundant pattern to be added of the subregion in each group；Set a scaling value, each figure within the subregion of same group is all zoomed in and out with this scale value；Calculate the density value after subregion scaling；The density contrast between density value after the original density value of calculating subregion and scaling；Absolute value according to density contrast adjusts the size of redundant pattern；The size of redundant pattern reduces with the increase of the absolute value of described density difference.The method of the present invention, it can be ensured that wafer Density Distribution is uniform, reduces the Density Distribution difference of domain and wafer, improves degree of planarization.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, be specifically related to a kind of method adding redundant pattern.
Background technology
Along with chip fabrication techniques node is more and more less, process technique becomes increasingly complex, cmp
Wafer planarization degree after (CMP, Chemical mechanical polishing) is to device or structure
Affect the most increasing.
But, for metal planarization, the grinding rate of metal and dielectric material generally differs, these
The selectivity of grinding rate can be made wafer undesirable erosion (erosion) and depression occur by material
(dishing) phenomenon.Dielectric medium local is the thinnest there will be erosion, and the grinding rate of metal compares dielectric medium
Want big, near both contact surfaces, there will be depression.Cmp in existing production technology
Making technology also encounters identical problem, such as shallow trench isolation dielectric (shallow trench
Isolation, STI) etc..In general, internal graphic structure and the density of figure are to corroding and depression
The impact produced is relatively big, and therefore, industry is generally filled in around metal level by redundant pattern (dummy),
In the case of not affecting device connection, it is ensured that domain and the Density Distribution of wafer and uniformity, thus change
Kind flatening process.
In general, filling redundant pattern is the principle according to local density, same or like to density
The subregion of same group adds identical redundant pattern, makes the close of each piece of subregion on wafer as far as possible
Degree be held at one fixing within the scope of.The density of subregion is the area of all figures in subregion
The ratio of the gross area of summation and this subregion.But the every sub regions under same density area is added
Redundant pattern the most do not distinguish, such that the redundant pattern of some specific dimensions can only add part
Within subregion, remaining subregion of equal density range does not the most add, thus can cause adding
After redundant pattern, the density difference of several equal densities subregions is the biggest.
Therefore, if only according to density size judge whether add redundant pattern, easily cause domain and
The Density Distribution difference of wafer, needs to study a kind of method adding redundant pattern so that domain and
Crystal column surface Density Distribution is more uniform, improves degree of planarization.
Summary of the invention
In order to overcome the problems referred to above, present invention aims to provide one for the subregion of same or like density
Plant the method adding redundant pattern, thus reduce Density Distribution difference, increase the uniformity of Density Distribution,
Improve degree of planarization.
The invention provides a kind of method adding redundant pattern, comprising:
Step S01: domain is divided into the subregion of some same sizes, calculates each described subregion
Original density value；
Step S02: described subregion is divided into some groups, wherein, by described original density value identical or
Close described subregion is divided into one group；
Step S03: select the group of redundant pattern to be added；
Step S04: according to described original density value, the subregion in each group of primary Calculation to add
The size of redundant pattern；
Step S05: set a scale value, by equal for each figure within the subregion in same group
Zoom in and out with described scale value；
Step S06: calculate the density value after described subregion scaling；
Step S07: calculate between the density value after the original density value of described subregion and described scaling
Density contrast；
Step S08: adjust the size of described redundant pattern according to the absolute value of described density contrast；Wherein,
The size of described redundant pattern reduces with the increase of the absolute value of described density difference.
Preferably, described step S03 specifically includes: be divided into high, medium and low by the density interval of 0-100%
Three density regions；Wherein, for being positioned at the group in described high density area, subregion therein need not add
Redundant pattern；For be positioned at described in, group in low density area, subregion therein redundancy to be added figure
Shape.
Preferably, described high density area is the density interval of 70-100%；Described Midst density district is 40-70%
Density interval；Described low density area is that the density of 0-40% is interval.
Preferably, the density interval of each group is 5%-10%.
Preferably, be scaled described in the edge along each figure within described subregion outwards expand or to
Inside reduce certain described scale value, utilize described scale value to calculate the density of the described subregion after scaling.
Preferably, described scale value is 1-300nm.
Preferably, domain is divided into some sub-rectangular areas.
Preferably, a length of 1-50um of described sub-rectangular areas, a width of 1～50um.
Preferably, after described step S08, also include: the redundant pattern after described adjustment is set
Meter rule checks.
The method of the interpolation redundant pattern of the present invention, by dividing subregion same or like for density same
One group, for the subregion in same group of selected redundant pattern to be added, first, calculate this
Organize the size of redundant pattern to be added；Then, redundancy figure to the every sub regions in this group respectively
The size of shape carries out density adjustment, itself particularly as follows: first, by each figure in subregion with identical
Ratio zooms in and out, and then, calculates the density contrast before and after this subregion scaling, finally, utilizes this density
The absolute value of difference adjusts the size of the redundant pattern of this subregion, for the son that density contrast absolute value is bigger
Region, the size of its redundant pattern is relatively reduced, and for the subregion that density contrast absolute value is less, it is superfluous
The size of complementary graph increases relatively.This is owing to the limit number in density contrast absolute value big explanation subregion is more,
The figure distribution ratio being approximately considered in region is relatively decentralized, is suitable for adding the redundant pattern that size is less, otherwise,
If density contrast absolute value is little, it is suitable for adding larger-size redundant pattern.So, after utilizing adjustment
Redundant pattern may insure that wafer Density Distribution is uniform, reduces the Density Distribution difference of domain and wafer,
Improve degree of planarization.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method for the interpolation redundant pattern of a preferred embodiment of the present invention
Fig. 2 is the segmentation employed in the method for the interpolation redundant pattern of the above-mentioned preferred embodiment of the present invention
After the pictorial diagram of domain
Fig. 3 is that the figure of any two subregion in the domain in the above-mentioned preferred embodiment of the present invention shows
It is intended to
Fig. 4 be in the above-mentioned preferred embodiment of the present invention to each figure in above-mentioned any two subregion
Shape zoom in and out after pictorial diagram
Detailed description of the invention
Embodiment feature of present invention will describe with the embodiment of advantage in the explanation of back segment in detail.It should be understood that
Being that the present invention can have various changes in different examples, it neither departs from the scope of the present invention,
And explanation therein and being shown in substantially as purposes of discussion, and be not used to limit the present invention.
Below in conjunction with accompanying drawing 1-4, by specific embodiment, the present invention is added the method work of redundant pattern
Further describe.Fig. 1 is the method for the interpolation redundant pattern of a preferred embodiment of the present invention
Schematic flow sheet, is adopted in the method for the interpolation redundant pattern of the above-mentioned preferred embodiment that Fig. 2 is the present invention
Segmentation after the pictorial diagram of domain, Fig. 3 is the domain in the above-mentioned preferred embodiment of the present invention
In the pictorial diagram of any two subregion, Fig. 4 is right in the above-mentioned preferred embodiment of the present invention
Each figure in above-mentioned any two subregion zoom in and out after pictorial diagram.It should be noted that,
Accompanying drawing all uses the form simplified very much, uses non-ratio accurately, and only in order to facilitate, to reach lucidly
To the purpose aiding in illustrating the embodiment of the present invention.
Referring to Fig. 1, the method for the interpolation redundant pattern of the present embodiment comprises the following steps:
Step S01: domain is divided into the subregion of some same sizes, calculates the former of every sub regions
Beginning density value；
Concrete, in the present embodiment, refer to Fig. 2, domain is divided into some identical rectangular sub-regions
Territory, the length of this sub-rectangular areas can be, but not limited to as 1-50um, and wide can be, but not limited to is 1～50um；
The formula of the original density value calculating every sub regions is d=Spattern/Stotal, wherein, SpatternFor subregion
In all figures area summation, StotalFor the subregion gross area.
Step S02: be grouped subregion, is worth original density same or like subregion and is divided into
One group；
Concrete, in the present embodiment, according to original density value is same or like, subregion is grouped, permissible
It is grouped according at interval of 5%-10%；As a example by interval of 10%, 0-10% is one group, 10%-20%
Being one group, 20%-30% is one group ..., so, in the density interval of 0-100%, can be by all
Subregion be divided into 10 groups.Certainly, in the present invention, the packet to subregion is not limited to 5%-10%'s
Density interval is grouped.
Step S03: select the group of redundant pattern to be added；
Concrete, in the present embodiment, first, the density interval of 0-100% is divided into high, medium and low three
Density region, here, the density that high density area can be, but not limited to as 70-100% is interval, and Midst density district can
With but to be not limited to the density of 40-70% interval；Low density area can be, but not limited to the density region for 0-40%
Between.For the group being positioned in high density area, subregion therein need not add redundant pattern；For being positioned at
In, group in low density area, subregion therein redundant pattern to be added.
Step S04: according to original density value, the subregion in the group that primary Calculation is each is to be added
The size of redundant pattern；
Concrete, in the present embodiment, according to the difference of original density value, the subregion in each group is wanted
The size of the redundant pattern added is the most different；Each sub regions in same group is adjusted redundant pattern respectively
Original size so that the density in the every sub regions added after redundant pattern in same group is identical or phase
Closely.
Step S05: set a scale value, by equal for each figure within the subregion in same group
Zoom in and out with this scale value；
Concrete, in the present embodiment, refer to Fig. 3 and Fig. 4, after the dotted line in Fig. 4 represents scaling
Figure, here, the scaling of each figure in same subregion is identical, and in same group
Scaling between each sub regions is identical.Described is scaled along each figure within subregion
Edge outwards expands or inwardly reduces certain scale value, the subregion after utilizing this scale value to calculate scaling
Density.It should be noted that when outwards expanding, it should not overlapping figure to occur for preferably selecting,
When inwardly reducing, it should not delete too small figure for preferably selecting；It is preferred that in the present embodiment,
This scale value can be 1-300nm.
Step S06: calculate the density value after subregion scaling；
Concrete, in the present embodiment, the formula that the density of the subregion after calculating scaling is used is
d’=S’pattern/Stotal, wherein, S 'patternFor in subregion scaling after all figures area summation,
StotalFor the subregion gross area.
Step S07: the density contrast between density value after the original density of calculating subregion and scaling；
Concrete, in the present embodiment, according to original density d before the subregion scaling above calculated, then
Deduct the density d after scaling ', obtain density difference D=d-d '.
Step S08: adjust the size of redundant pattern according to the absolute value of density contrast；Wherein, redundancy figure
The size of shape reduces with the increase of the absolute value of density contrast.
Concrete, in the present embodiment, utilize absolute value | D | of above-mentioned density difference to adjust redundant pattern
Size, for the subregion that | D | is bigger, reduces the size of its redundant pattern, for | D | relatively little Zi district
Territory, increases the size of its redundant pattern, principle as previously mentioned: density contrast absolute value big explanation subregion
Interior limit number is more, and the figure distribution ratio being approximately considered in region is relatively decentralized, is suitable for adding size less
Redundant pattern, whereas if little being then suitable for of density contrast absolute value adds larger-size redundant pattern.
Needing exist for explanation, the concrete size for redundant pattern can be come according to domain or concrete layer
Regulation, and, could must also use through DRC after adding redundant pattern.
In sum, the method for the interpolation redundant pattern of the present invention, by the son to same or like density
Each figure of the subregion that region is the most same group carries out the scaling of same ratio, and utilize before and after scaling is close
Degree difference absolute value adjusts the size of redundant pattern, for the subregion that density contrast absolute value is big, by redundancy
The size of figure reduces, the subregion little to density contrast absolute value, the size of redundant pattern is increased, this
Sample, wafer Density Distribution is uniform to utilize the redundant pattern after adjusting may insure that, reduces domain and wafer
Density Distribution difference, improve degree of planarization.
The above-described embodiments of the invention that are only, described embodiment also is not used to limit the special of the present invention
Profit protection domain, the equivalent structure change that the specification of the most every utilization present invention and accompanying drawing content are made,
In like manner should be included in protection scope of the present invention.
Claims (9)
1. the method adding redundant pattern, it is characterised in that including:
Step S01: domain is divided into the subregion of some same sizes, calculates each described subregion
Original density value；
Step S02: described subregion is divided into some groups, wherein, by described original density value identical or
Close described subregion is divided into one group；
Step S03: select described group of redundant pattern to be added；
Step S04: according to described original density value, the described subregion in each described group of primary Calculation
The size of redundant pattern to be added；
Step S05: set a scale value, each by within the described subregion in same described group
Individual figure all zooms in and out with described scale value；Described it is scaled along each figure within described subregion
Edge outwards expand or inwardly reduce certain described scale value；Described scale value is the value of long measure；
Step S06: calculate the density value after described subregion scaling；
Step S07: calculate the density value after the described original density value of described subregion and described scaling it
Between density contrast；
Step S08: adjust the size of described redundant pattern according to the absolute value of described density contrast；Wherein,
The size of described redundant pattern reduces with the increase of the absolute value of described density difference.
The method of interpolation redundant pattern the most according to claim 1, it is characterised in that described step
S03 specifically includes: be divided into the first density region, the second density region and the 3rd close in the density interval of 0-100%
Degree district；The density of the first density region is higher than the density of the second density region, and the density of the second density region is higher than the
The density in triple density district；Wherein, for being positioned at described group in described first density region, sub-district therein
Redundant pattern need not be added in territory；For be positioned at described second density region, described group of described triple density district,
Subregion therein redundant pattern to be added.
The method of interpolation redundant pattern the most according to claim 2, it is characterised in that described first
Density region is that the density of 70-100% is interval；Described second density region is that the density of 40-70% is interval；Described
Triple density district is that the density of 0-40% is interval.
The method of interpolation redundant pattern the most according to claim 1, it is characterised in that each described
The density interval of group is 5%-10%.
The method of interpolation redundant pattern the most according to claim 1, it is characterised in that utilize described
Scale value calculates the density of the described subregion after scaling.
The method of interpolation redundant pattern the most according to claim 5, it is characterised in that described scaling
Value is 1-300nm.
The method of interpolation redundant pattern the most according to claim 1, it is characterised in that domain is divided
Become some sub-rectangular areas.
The method of interpolation redundant pattern the most according to claim 7, it is characterised in that described rectangle
A length of 1-50um of subregion, a width of 1～50um.
The method of interpolation redundant pattern the most according to claim 1, it is characterised in that described step
After S08, also include: the redundant pattern after described adjustment is designed rule inspection.
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104465650A (en) * | 2014-11-28 | 2015-03-25 | 上海华力微电子有限公司 | Method for adding redundancy patterns to photoetching map |
| CN107885939B (en) * | 2017-11-09 | 2020-12-04 | 上海华力微电子有限公司 | Method for improving monitoring precision of monitoring graph |
| CN108763723A (en) * | 2018-05-23 | 2018-11-06 | 上海华力微电子有限公司 | A kind of redundant pattern adding method |
| CN109270785A (en) * | 2018-08-15 | 2019-01-25 | 上海华力集成电路制造有限公司 | Well layer lithography layout, its forming method and its Optical Proximity Correction processing method |
| CN109101756B (en) * | 2018-08-31 | 2023-06-16 | 上海华力微电子有限公司 | Redundant graph adding method |
| CN109711006A (en) * | 2018-12-11 | 2019-05-03 | 上海华力微电子有限公司 | A kind of redundant pattern adding method |
| CN110378073A (en) * | 2019-08-15 | 2019-10-25 | 德淮半导体有限公司 | Domain modification method and device |
| CN115997285A (en) * | 2020-09-27 | 2023-04-21 | 华为技术有限公司 | Preparation method of through silicon via structure and through silicon via structure |
| CN113515915B (en) * | 2021-04-23 | 2023-04-25 | 成都海光集成电路设计有限公司 | Method, device, equipment and storage medium for inserting filling unit |
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| CN102930159A (en) * | 2012-10-31 | 2013-02-13 | 中国科学院微电子研究所 | Redundant metal filling method and device |
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| KR100378195B1 (en) * | 2001-02-21 | 2003-03-29 | 삼성전자주식회사 | Generation method of data for used in mask including dummy pattern groups having density continuously adjusted in according to density of local design pattern and recording media in which the same recorded |
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| CN102117348A (en) * | 2009-12-31 | 2011-07-06 | 中国科学院微电子研究所 | Preprocessing method for realizing layout density homogenization by filling redundant metal |
| CN102469134A (en) * | 2010-11-17 | 2012-05-23 | 广州欢网科技有限责任公司 | IP (Internet Protocol) address search method and device |
| CN102799060A (en) * | 2011-05-26 | 2012-11-28 | 联华电子股份有限公司 | Dummy pattern and method for forming same |
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