CN110378073A - Domain modification method and device - Google Patents
Domain modification method and device Download PDFInfo
- Publication number
- CN110378073A CN110378073A CN201910754736.0A CN201910754736A CN110378073A CN 110378073 A CN110378073 A CN 110378073A CN 201910754736 A CN201910754736 A CN 201910754736A CN 110378073 A CN110378073 A CN 110378073A
- Authority
- CN
- China
- Prior art keywords
- window
- redundant pattern
- density
- domain
- initial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/392—Floor-planning or layout, e.g. partitioning or placement
Abstract
A kind of domain modification method and device, which comprises provide initial domain, the initial domain is divided into multiple artwork windows by preset window size；It determines the initial layout density in each artwork window, and determines that artwork window of the initial layout density beyond pre-set density range is that redundant pattern adds window；Window is added for each redundant pattern, the determining each artwork window adjacent with redundant pattern addition each side of window as adjacent window apertures, and determines the average value of the initial layout density of the adjacent window apertures of each redundant pattern addition window；Window is added to each redundant pattern, the difference between the initial layout density and the average value of the initial layout density of corresponding adjacent window apertures of the redundant pattern addition window is determined, as density add value；Based on the density add value, Xiang Suoshu redundant pattern, which is added, adds redundant pattern in window.The efficiency and accuracy of addition redundant pattern can be improved in the present invention program.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of domain modification methods and device.
Background technique
Integrated circuit diagram is a ring important in technical field of manufacturing semiconductors, in addition to need to embody circuit logic or
Except function is to ensure that domain schematic diagram (Layout Versus Schematic Check, LVS check) verifying is correct, also
Increase some figures unrelated with LVS verification, to reduce the deviation of process, we term it redundant patterns for these figures
(Dummy Pattern)。
The addition quality of redundant pattern has an impact many techniques, such as occurs etching deficiency or etched when etching
The flatness religion difference of crystal column surface asks after the reduction problem of surface uniformity caused by spending and chemical gaseous phase grinding technics
Topic.
For grinding (Chemical Mechanical Polish, CMP) technique with chemical gaseous phase, after cmp, to crystalline substance
The poor flatness requirement with higher on circle surface (Wafer).And the planarization of crystal column surface, the density point with initial domain
It is furnished with important association.Specifically, layout density is unevenly distributed, crystal column surface after CMP is easy to cause to form recess
(Dishing) and (Erosion) is corroded.By being inserted into redundant pattern in domain, the Density Distribution of domain can be made relatively equal
It is even, to help to improve CMP process window.
However, in the prior art, the adding procedure of redundant pattern is the addition window (Window) according to preset step-length
What size carried out, since layout patterns design multifarious original figure in certain addition windows, after being likely to accumulate in division
Addition window corner in.Although individually the layout density in addition window meets design rule, in the rank of addition window
The place of connecing can have density deficiency situation.The density step difference of this adjacent addition window, will affect the quality of production of subsequent technique,
Such as influence wafer surface flatness after CMP.
In the prior art, in view of the above-mentioned problems, being solved by the way of manual inspection addition, specifically, using version
Figure tool open domain after determining low-density window, manually adds redundant pattern, and repeated authentication density rule.However, by
There are the number of windows of density step difference greatly (may up to hundreds and thousands of), manual amendment's workload mistakes in entire domain
Greatly, it and needs to verify repeatedly, is difficult to meet demand in time and efficiency.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of domain modification method and devices, and addition redundant pattern can be improved
Efficiency and accuracy.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of domain modification method, comprising: provide initial version
Figure, the initial domain are divided into multiple artwork windows by preset window size；Determine that the initial domain in each artwork window is close
Degree, and determine that artwork window of the initial layout density beyond pre-set density range is that redundant pattern adds window；For each superfluous
Complementary graph adds window, the determining each artwork window adjacent with redundant pattern addition each side of window, as adjacent
Window, and determine the average value of the initial layout density of the adjacent window apertures of each redundant pattern addition window；To each redundancy figure
Shape adds window, determines that the initial layout density of the redundant pattern addition window and the initial domain of corresponding adjacent window apertures are close
Difference between the average value of degree, as density add value；Based on the density add value, Xiang Suoshu redundant pattern adds window
Interior addition redundant pattern.
Optionally, providing initial domain includes: offer original layout；Using original density add value, to the original version
Figure addition initial redundancy figure, and using the original layout after adding as the initial domain.
Optionally, window, the determining each side phase with redundant pattern addition window are added for each redundant pattern
Before adjacent each artwork window, the domain modification method further include: redundant pattern addition window is extracted.
Optionally, the domain modification method further include: remove the initial domain in the redundant pattern addition window
Figure, to obtain the redundant pattern；It, will be described superfluous according to position of the redundant pattern addition window in initial domain
Complementary graph is added to the initial domain.
Optionally, the pre-set density range includes pre-set density upper limit value and/or pre-set density lower limit value, described default
Upper density limit value is maximum value specified in design rule, and the pre-set density lower limit value is minimum specified in design rule
Value.
Optionally, using following formula, the initial layout density of the redundant pattern addition window and corresponding phase are determined
Difference between the average value of the initial layout density of adjacent window:Wherein, σ is for indicating the density add value
Absolute value,For indicating the average value of the initial layout density of the adjacent window apertures, e is for indicating that the redundant pattern adds
The initial layout density of adding window mouth.
Optionally, the window area of each artwork window is equal and shape is rectangle.
Optionally, the redundant pattern does not intersect or tangent with the existing design configuration of the initial domain.
Optionally, the domain modification method further include: traverse each redundant pattern addition window, Xiang Suoyou redundancy figure
Shape, which is added, adds redundant pattern in window.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of redundant pattern adding set, including memory and
Processor, the computer instruction that can be run on the processor is stored on the memory, and the processor runs institute
The step of above-mentioned domain modification method is executed when stating computer instruction.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, pass through the determining each domain adjacent with redundant pattern addition each side of window
Window, and determine the average value of the initial layout density of the adjacent window apertures of each redundant pattern addition window, and then based on described
Redundant pattern adds the difference between the initial layout density and the average value of the initial layout density of corresponding adjacent window apertures of window
Value, the initial domain into redundant pattern addition window add redundant pattern, facilitate the place by computer to layout data
Reason ability can quickly solve the density step difference in elimination figure, cumbersome compared to manual method time-consuming, and be easy to appear mistake
Accidentally, using the scheme of the embodiment of the present invention, the efficiency and accuracy of addition redundant pattern can be improved.
Further, in embodiments of the present invention, can first to the redundant pattern addition window extract, then to
After initial domain addition redundant pattern in the redundant pattern addition window, remove in the redundant pattern addition window
The figure of initial domain adds position of the window in initial domain according to the redundant pattern to obtain the redundant pattern,
The redundant pattern is added to the initial domain, using the scheme of the embodiment of the present invention, window can be added to redundant pattern
Mouth carries out independent operation, pure redundant pattern is then added back initial domain, so as to avoid in adding procedure to initial version
The influence of figure.
Detailed description of the invention
Fig. 1 is a kind of layout density schematic diagram of domain modification method in the prior art；
Fig. 2 is a kind of the schematic diagram of the section structure of the application product of domain modification method in the prior art；
Fig. 3 is a kind of flow chart of domain modification method in the embodiment of the present invention；
Fig. 4 is a kind of schematic diagram of adjacent window apertures in domain modification method in the embodiment of the present invention；
Fig. 5 is the redundant pattern addition window after adding redundant pattern in the embodiment of the present invention in a kind of domain modification method
Schematic diagram；
Fig. 6 is to add the layout density schematic diagram after redundant pattern in the embodiment of the present invention in a kind of domain modification method.
Specific embodiment
In the prior art, the adding procedure of redundant pattern is carried out according to the artwork window size of preset step-length, by
Multifarious original figure in certain artwork windows is designed in layout patterns, is likely to accumulate in the artwork window after dividing
In corner.Although the layout density in single artwork window meets design rule, can exist in the joining place of artwork window close
Spend insufficient situation.
Referring to Fig.1, Fig. 1 is a kind of layout density schematic diagram of domain modification method in the prior art.
As shown in Figure 1, providing initial domain, the initial domain is divided into multiple addition windows (such as by preset window size
The grid shown in fig. 1 divided with dotted line), existing domain modification method then can be used, is added in each addition window
Add redundant pattern.
Further, after adding redundant pattern in each addition window, the initial domain in each addition window is close
Degree meets pre-set density range respectively.Specifically, if the layout density of some addition window is less than pre-set density range
Lower limit, then design rule check tool can be used and add more redundant patterns, so that the version of the addition window after addition
Figure density reaches pre-set density range, to meet the modified demand of domain.
The present inventor has found after study, conventionally, as being added only for each addition window
Add, the layout density of each addition window is only single numerical value, can not reflect the uniformity of figure, it is understood that there may be figure product
Gather the corner the case where, lead between adjacent addition window that there are biggish depletion regions, generates biggish density step difference, shadow
Ring device quality.
Referring to Fig. 2, Fig. 2 is a kind of the schematic diagram of the section structure of the application product of domain modification method in the prior art.
As shown in Fig. 2, having important association, version with the Density Distribution of initial domain due to the planarization of crystal column surface
Figure Density Distribution is uneven, is easy to cause crystal column surface after CMP to form elevated regions 101 and sunk area 102, and then in key
Short-circuit (region that such as dotted line is irised out) is easy to happen when conjunction.
In embodiments of the present invention, pass through the determining each domain adjacent with redundant pattern addition each side of window
Window, and determine the average value of the initial layout density of the adjacent window apertures of each redundant pattern addition window, and then based on described
Redundant pattern adds the difference between the initial layout density and the average value of the initial layout density of corresponding adjacent window apertures of window
Value, the initial domain into redundant pattern addition window add redundant pattern, facilitate the place by computer to layout data
Reason ability can quickly solve the density step difference in elimination figure, cumbersome compared to manual method time-consuming, and be easy to appear mistake
Accidentally, using the scheme of the embodiment of the present invention, the efficiency and accuracy of addition redundant pattern can be improved.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Referring to Fig. 3, Fig. 3 is a kind of flow chart of domain modification method in the embodiment of the present invention.The domain modification method
May include step S21 to step S25:
Step S21: providing initial domain, and the initial domain is divided into multiple artwork windows by preset window size；
Step S22: determining the initial layout density in each artwork window, and determines that initial layout density is close beyond presetting
The artwork window for spending range is that redundant pattern adds window；
Step S23: window, the determining each side phase with redundant pattern addition window are added for each redundant pattern
Adjacent each artwork window as adjacent window apertures, and determines the initial domain of the adjacent window apertures of each redundant pattern addition window
The average value of density；
Step S24: adding window to each redundant pattern, determines the initial layout density of the redundant pattern addition window
With the difference between the average value of the initial layout density of corresponding adjacent window apertures, as density add value；
Step S25: being based on the density add value, and Xiang Suoshu redundant pattern, which is added, adds redundant pattern in window.
Above-mentioned each step is illustrated below in conjunction with fig. 4 to fig. 6.
Referring to Fig. 4, Fig. 4 is a kind of schematic diagram of adjacent window apertures in domain modification method in the embodiment of the present invention.
As shown in figure 4, providing initial domain, the initial domain is divided into multiple artwork windows (such as by preset window size
The grid divided with solid line shown in Fig. 4).
Further, the step of providing initial domain may include: offer original layout；Using original density add value,
Initial redundancy figure is added to the original layout, and using the original layout after adding as the initial domain.
Specifically, the initial domain includes main graphic, can also include initial redundancy figure, the initial redundancy
Figure can be using conventional redundant pattern adding method (such as existing software) addition.
It (is divided as shown in Figure 4 with dotted line it should be pointed out that the initial domain is further divided into multiple addition windows
Grid), it is described addition window size can be identical as the size of the artwork window, can be with difference, the addition window
The initial position of mouth can be identical as the initial position of the artwork window, can be with difference.
Preferably, the size that addition window can be set is different from the size of the artwork window, and/or, setting addition
The position of window is different from the position of the artwork window, to avoid the repeatability of addition.
It in embodiments of the present invention, can be in existing redundant pattern adding method by the way that additional artwork window is arranged
On the basis of, the limitation of ready-portioned addition window is reduced, so as to more freely determine the position of artwork window,
Namely more freely selection region determines initial layout density, effectively avoids blind area.
Then it determines the initial layout density in each artwork window, and determines that initial layout density exceeds pre-set density model
The artwork window enclosed is that redundant pattern adds window.
Further, the pre-set density range may include pre-set density upper limit value and/or pre-set density lower limit value, institute
Stating pre-set density upper limit value can be maximum value specified in design rule (Design Rule), the pre-set density lower limit value
It can be minimum value specified in design rule.
It in specific implementation, can be with if the layout density of some artwork window is less than the lower limit of pre-set density range
Determine that the artwork window is that redundant pattern adds window.
If the layout density of some artwork window is greater than the upper limit of pre-set density range, the domain window can be determined
Redundant pattern excessive addition in mouthful, so as to which figure in domain is checked and verified using mode appropriate, effectively
Reduce the loss occurred after manufacture.
As a unrestricted example, in a semiconductor devices, need in each region 10um × 10um,
Layout density is set and is more than or equal to 60%.Can then determine layout density less than 60% artwork window be the redundant pattern addition
Window.
Next, adding window for each redundant pattern, each item with redundant pattern addition window can be determined
The adjacent each artwork window in side as adjacent window apertures, and determines that each redundant pattern adds the initial of the adjacent window apertures of window
The average value of layout density.
Further, the window area of each artwork window can equal and shape all can be rectangle.
Window 21 as shown in Figure 4 is a redundant pattern addition window, and is rectangle, then can determine and the window
Four adjacent windows 22 of the four edges of mouth 21 are the adjacent window apertures.If the redundant pattern addition window is other figures
Shape, for example, hexagon can then determine that six windows adjacent with redundant pattern addition six sides of window are described
Adjacent window apertures, and so on, it repeats no more.
Referring to Fig. 5, Fig. 5 is to add the redundant pattern after redundant pattern in a kind of domain modification method in the embodiment of the present invention
Add the schematic diagram of window.
As shown in figure 5, adding window to each redundant pattern, determine that the initial domain of the redundant pattern addition window is close
Degree is then based on institute as density add value with the difference between the average value of the initial layout density of corresponding adjacent window apertures
Density add value is stated, Xiang Suoshu redundant pattern, which is added, adds redundant pattern in window.
It is possible to further using following formula, determine the initial layout density of redundant pattern addition window with it is right
Difference between the average value of the initial layout density for the adjacent window apertures answered:
Wherein, σ is used to indicate the absolute value of the density add value,For indicating the initial domain of the adjacent window apertures
The average value of density, e are used to indicate the initial layout density of the redundant pattern addition window.
Specifically, by taking the window is rectangle as an example,Wherein, a, b, c and d are respectively four
The initial layout density of adjacent window apertures.
It is understood that the determination of the density add value is extremely important for addition redundant pattern, if described close
It is excessive to spend add value, is easy to cause local areal density excessive, influences properties of product, if density add value is too small, be easy to lead
The problem of causing local areal density too small, density step difference can still occur.
In embodiments of the present invention, using the initial layout density of redundant pattern addition window and corresponding adjacent windows
Difference between the average value of the initial layout density of mouth helps to realize the layout density of adjacent window apertures as density add value
The soft transitions of value, the problem of being effectively reduced density step difference.
In specific implementation, it is based on the density add value, Xiang Suoshu redundant pattern, which is added, adds redundant pattern in window
The step of, it can be added using existing design rule check tool, the embodiment of the present invention does not limit specific tools selection
System.
Referring to Fig. 6, Fig. 6 is to add the layout density after redundant pattern in a kind of domain modification method in the embodiment of the present invention
Schematic diagram.
As shown in fig. 6, it is added to redundant pattern in the artwork window (depletion region between i.e. multiple addition windows),
Reduce the density step difference in the region.
Further, each redundant pattern addition window is traversed, Xiang Suoyou redundant pattern, which is added, adds redundancy figure in window
Shape.
In embodiments of the present invention, it can be added by traversal, realize the addition to each redundant pattern addition window, drop
A possibility that low drain adds.
Further, the redundant pattern does not intersect or tangent with the existing design configuration of the initial domain.
It in embodiments of the present invention, can be by the way that the redundant pattern not existing design configuration with the initial domain be arranged
Intersection is tangent, reduces the influence to semiconductor devices.
In embodiments of the present invention, pass through the determining each domain adjacent with redundant pattern addition each side of window
Window, and determine the average value of the initial layout density of the adjacent window apertures of each redundant pattern addition window, and then based on described
Redundant pattern adds the difference between the initial layout density and the average value of the initial layout density of corresponding adjacent window apertures of window
Value, the initial domain into redundant pattern addition window add redundant pattern, facilitate the place by computer to layout data
Reason ability can quickly solve the density step difference in elimination figure, cumbersome compared to manual method time-consuming, and be easy to appear mistake
Accidentally, using the scheme of the embodiment of the present invention, the efficiency and accuracy of addition redundant pattern can be improved.
In a kind of specific embodiment of the embodiment of the present invention, when addition redundant pattern can also be arranged in, by redundancy
Figure addition window is extracted as independent window, is then added to the independent window.
Specifically, window, the determining each side phase with redundant pattern addition window are added for each redundant pattern
Before adjacent each artwork window, the domain modification method may include: to mention to redundant pattern addition window
It takes.After adding redundant pattern into redundant pattern addition window, the domain modification method can also include:
Except the figure of the initial domain in redundant pattern addition window, to obtain the redundant pattern；According to the redundant pattern
Position of the window in initial domain is added, the redundant pattern is added to the initial domain.
In embodiments of the present invention, first redundant pattern addition window can be extracted, then to described superfluous
After complementary graph adds the initial domain addition redundant pattern in window, the initial version in the redundant pattern addition window is removed
The figure of figure, will be described according to position of the redundant pattern addition window in initial domain to obtain the redundant pattern
Redundant pattern is added to the initial domain, using the scheme of the embodiment of the present invention, can add window to redundant pattern and carry out
Then independent operation only will add back initial domain comprising the pure redundant pattern including newly added figure, so as to avoid
To the influence of initial domain in adding procedure.
In embodiments of the present invention, a kind of redundant pattern adding set, including memory and processor are also disclosed, it is described
The computer instruction that can be run on the processor is stored on memory, the processor runs the computer instruction
The step of Shi Zhihang above-mentioned domain modification method.
Wherein, the redundant pattern adding set can be multiplexed existing design rule check tool, thus effectively real
Existing cost control.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of domain modification method characterized by comprising
Initial domain is provided, the initial domain is divided into multiple artwork windows by preset window size；
It determines the initial layout density in each artwork window, and determines that initial layout density exceeds the domain of pre-set density range
Window is that redundant pattern adds window；
Window, the determining each domain adjacent with redundant pattern addition each side of window are added for each redundant pattern
Window as adjacent window apertures, and determines the average value of the initial layout density of the adjacent window apertures of each redundant pattern addition window；
Window is added to each redundant pattern, determine the initial layout density of redundant pattern addition window with it is corresponding adjacent
Difference between the average value of the initial layout density of window, as density add value；
Based on the density add value, Xiang Suoshu redundant pattern, which is added, adds redundant pattern in window.
2. domain modification method according to claim 1, which is characterized in that providing initial domain includes: offer original version
Figure；
Using original density add value, initial redundancy figure is added to the original layout, and make with the original layout after adding
For the initial domain.
3. domain modification method according to claim 1, which is characterized in that add window for each redundant pattern, really
Before fixed each artwork window adjacent with redundant pattern addition each side of window, further includes:
Redundant pattern addition window is extracted.
4. domain modification method according to claim 3, which is characterized in that further include:
The figure of the initial domain in the redundant pattern addition window is removed, to obtain the redundant pattern；
According to position of the redundant pattern addition window in initial domain, the redundant pattern is added to the initial version
Figure.
5. domain modification method according to claim 1, which is characterized in that the pre-set density range includes pre-set density
Upper limit value and/or pre-set density lower limit value, the pre-set density upper limit value are maximum value specified in design rule, described default
Lower density limit value is minimum value specified in design rule.
6. domain modification method according to claim 1, which is characterized in that use following formula, determine the redundancy figure
Shape adds the difference between the initial layout density and the average value of the initial layout density of corresponding adjacent window apertures of window:
Wherein, σ is used to indicate the absolute value of the density add value,For indicating the initial layout density of the adjacent window apertures
Average value, e is used to indicate the initial layout density of redundant pattern addition window.
7. domain modification method according to claim 1, which is characterized in that
The window area of each artwork window is equal and shape is rectangle.
8. domain modification method according to claim 1, which is characterized in that
The redundant pattern does not intersect or tangent with the existing design configuration of the initial domain.
9. domain modification method according to claim 1, which is characterized in that further include:
Each redundant pattern addition window is traversed, Xiang Suoyou redundant pattern, which is added, adds redundant pattern in window.
10. a kind of redundant pattern adding set, which is characterized in that including memory and processor, be stored on the memory
The computer instruction that can be run on the processor, which is characterized in that when the processor runs the computer instruction
Perform claim requires the step of any one of 1 to 9 domain modification method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910754736.0A CN110378073A (en) | 2019-08-15 | 2019-08-15 | Domain modification method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910754736.0A CN110378073A (en) | 2019-08-15 | 2019-08-15 | Domain modification method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110378073A true CN110378073A (en) | 2019-10-25 |
Family
ID=68259593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910754736.0A Pending CN110378073A (en) | 2019-08-15 | 2019-08-15 | Domain modification method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110378073A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112434484A (en) * | 2020-12-02 | 2021-03-02 | 长江存储科技有限责任公司 | Redundancy filling method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080034332A1 (en) * | 2006-05-01 | 2008-02-07 | Mentor Graphics Corporation | Optimization Of Geometry Pattern Density |
| CN102468134A (en) * | 2010-11-16 | 2012-05-23 | 上海华虹Nec电子有限公司 | Method for adjusting chip graph density using redundancy graph insertion, |
| CN103855044A (en) * | 2014-03-31 | 2014-06-11 | 上海华力微电子有限公司 | Method for adding redundant graphics |
| CN103902789A (en) * | 2014-04-22 | 2014-07-02 | 上海华力微电子有限公司 | Filling method of redundant graphs |
| CN108763723A (en) * | 2018-05-23 | 2018-11-06 | 上海华力微电子有限公司 | A kind of redundant pattern adding method |
-
2019
- 2019-08-15 CN CN201910754736.0A patent/CN110378073A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080034332A1 (en) * | 2006-05-01 | 2008-02-07 | Mentor Graphics Corporation | Optimization Of Geometry Pattern Density |
| CN102468134A (en) * | 2010-11-16 | 2012-05-23 | 上海华虹Nec电子有限公司 | Method for adjusting chip graph density using redundancy graph insertion, |
| CN103855044A (en) * | 2014-03-31 | 2014-06-11 | 上海华力微电子有限公司 | Method for adding redundant graphics |
| CN103902789A (en) * | 2014-04-22 | 2014-07-02 | 上海华力微电子有限公司 | Filling method of redundant graphs |
| CN108763723A (en) * | 2018-05-23 | 2018-11-06 | 上海华力微电子有限公司 | A kind of redundant pattern adding method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112434484A (en) * | 2020-12-02 | 2021-03-02 | 长江存储科技有限责任公司 | Redundancy filling method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10002223B2 (en) | Method of designing layout of semiconductor device | |
| TWI448915B (en) | Computer-executed method and apparatus for performing dummy-fill in a design layout to achieve a target density, and computer-readable storage medium | |
| US8839168B2 (en) | Self-aligned double patterning via enclosure design | |
| TWI672600B (en) | Method of designing layout of semiconductor device and computer-based system for designing a layout of semiconductor device | |
| CN103902789A (en) | Filling method of redundant graphs | |
| JP4580006B2 (en) | Method for verifying mask layout design data of semiconductor integrated circuit | |
| JP4284202B2 (en) | Area ratio / occupancy ratio verification program and pattern generation program | |
| CN110378073A (en) | Domain modification method and device | |
| CN106997401B (en) | Method for extracting chip layout features, CMP simulation method and system | |
| US10860774B2 (en) | Methodology for pattern density optimization | |
| US9026955B1 (en) | Methodology for pattern correction | |
| JP2003224098A (en) | Design method of wiring, program and recording medium which records the program | |
| US8383299B2 (en) | Double patterning mask set and method of forming thereof | |
| CN107783369B (en) | Optical proximity correction repairing method | |
| KR100676606B1 (en) | Method for forming dummy pattern for cmp process | |
| JP3664992B2 (en) | Method and program for designing dummy pattern associated with polishing process, and recording medium recording the program | |
| Tseng | The equivalence and learning of probabilistic automata | |
| TWI735851B (en) | System and method for designing dummy patterns | |
| JP2003114515A (en) | Mask and its designing method | |
| CN102955363A (en) | Optical proximity correction online monitoring method | |
| US20150363532A1 (en) | Optimization of integrated circuits for a reticle transmission process window using multiple fill cells | |
| US11157670B2 (en) | Systems and methods for inter-die block level design | |
| US9536796B2 (en) | Multiple manufacturing line qualification | |
| US9471737B1 (en) | Semiconductor device with dummy cells of different data types | |
| US20140201694A1 (en) | Wrap Based Fill In Layout Designs |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230721 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Applicant after: Huaian Xide Industrial Design Co.,Ltd. Address before: No. 599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Applicant before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |
|
| TA01 | Transfer of patent application right | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20191025 |
|
| WD01 | Invention patent application deemed withdrawn after publication |