CN103853866B - The method of calibration of the ROM code datagraphic in total data domain and system - Google Patents

The method of calibration of the ROM code datagraphic in total data domain and system Download PDF

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Publication number
CN103853866B
CN103853866B CN201210525187.8A CN201210525187A CN103853866B CN 103853866 B CN103853866 B CN 103853866B CN 201210525187 A CN201210525187 A CN 201210525187A CN 103853866 B CN103853866 B CN 103853866B
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datagraphic
total data
data domain
rom code
code
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CN103853866A (en
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张兴洲
倪凌云
孙长江
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Abstract

The invention discloses the method for calibration of ROM code datagraphic in a kind of total data domain, the datagraphic of 1 storage state is carried out Boolean AND operation with the datagraphic of each memory element of the ROM code datagraphic in total data domain, obtains the solution code value of each memory element of ROM code datagraphic in total data domain;By the solution code value of each memory element of the ROM code datagraphic in total data domain, it is respectively compared with the original value of the corresponding each memory element in sample ROM code data, is verified result.The invention also discloses the check system of ROM code datagraphic in a kind of total data domain.The present invention, carries out a text and compares, it is possible to the ROM code datagraphic in accurate validation total data domain is the most correct, and whole process can be quick and convenient with full automation.

Description

The method of calibration of the ROM code datagraphic in total data domain and system
Technical field
The present invention relates to a kind of Semiconductor Physics layout data treatment technology, particularly to the ROM generation in total data domain The method of calibration of code datagraphic and system.
Background technology
The information that ROM (Read-Only Memory, read only memory) is stored, can only read, no under normal circumstances Can arbitrarily change.The information that it is stored generates under specific condition, even if its storage information that has a power failure also will not be lost, is A kind of nonvolatile memorizer, is applicable to store changeless program and data.ROM code (ROM Code) is ROM institute Information content to be stored.
ROM code flow chart of data processing, is that the ROM code data (usually 16 binary data) that client is provided become The process of physical graph, ROM memory cell type can be Code P (ion implantation type), Metal switching (metal switch type), Diffusion switches (diffusion layer switching) or other forms.
After ROM code datagraphic generates, need and form total data domain, owing to sending out after the merging of master data figure Raw forget to merge ROM code datagraphic, merge other the situation such as ROM code datagraphic, after forming total data domain Need the carrying out of the ROM code datagraphic in total data domain is verified;
The existing method that verifies the carrying out of the ROM code datagraphic in total data domain is, in total version of display Whether there is mistake by visually viewing ROM code figure on Tu, do so is the ROM code figure on the total domain of random choose Shape several from the point of view of once, do not ensure that the ROM code datagraphic in total data domain is the most correct.
Summary of the invention
The technical problem to be solved in the present invention is that the ROM code datagraphic quickly, in accurate validation total data domain is No correctly.
For solving above-mentioned technical problem, the invention provides the school of ROM code datagraphic in a kind of total data domain Proved recipe method, the ROM code datagraphic in total data domain corresponds to M line storage unit, and every a line is single corresponding to N number of storage Unit, M, N are positive integer, and the method for calibration of the ROM code datagraphic in total data domain comprises the following steps:
One .i=1, j=1;
Two, by 1 storage state datagraphic, with the ROM code datagraphic in total data domain corresponding to jth row The datagraphic of i-th memory element carries out Boolean AND operation, if the correspondence of the ROM code datagraphic in total data domain Datagraphic in jth row i-th memory element is 1 storage status data figure, then the ROM code data in total data domain The solution code value of jth row i-th array storage unit of figure is 1, otherwise the jth row of the ROM code datagraphic in total data domain The solution code value of the i-th array storage unit is 0;
Three .i are from increasing 1;If i is less than or equal to N, then carries out step 2, otherwise carry out step 4;
Four .j are from increasing 1, if j is less than or equal to M, then i is entered as 1, carries out step 2, otherwise carries out step 5;
Five. the solution code value of each memory element of the ROM code datagraphic in output total data domain.
It is also preferred that the left after step 5, by the decoding of each memory element of the ROM code datagraphic in total data domain Value, is respectively compared with the original value of the corresponding each memory element in sample ROM code data, is verified result;
If the solution code value of corresponding each memory element is all consistent with original value, then the ROM code data in total data domain Figure is correct, the otherwise ROM code datagraphic mistake in total data domain.
It is also preferred that the left N is equal to 8.
For solving above-mentioned technical problem, present invention also offers ROM code datagraphic in a kind of total data domain Check system, the ROM code datagraphic in total data domain corresponds to M line storage unit, and every a line is single corresponding to N number of storage Unit, M, N are positive integer, the check system of the ROM code datagraphic in total data domain, including a decoder module, a checking Comparison module;
Described decoder module, work process is as follows:
One .i=1, j=1;
Two, by 1 storage state datagraphic, with the ROM code datagraphic in total data domain corresponding to jth row The datagraphic of i-th memory element carries out Boolean AND operation, if the correspondence of the ROM code datagraphic in total data domain Datagraphic in jth row i-th memory element is 1 storage status data figure, then the ROM code data in total data domain The solution code value of jth row i-th array storage unit of figure is 1, otherwise the jth row of the ROM code datagraphic in total data domain The solution code value of the i-th array storage unit is 0;
Three .i are from increasing 1;If i is less than or equal to N, then carries out step 2, otherwise carry out step 4;
Four .j are from increasing 1, if j is less than or equal to M, then i is entered as 1, carries out step 2, otherwise carries out step 5;
Five. the solution code value of each memory element of the ROM code datagraphic in output total data domain;
Described comparison module, for the solution by each memory element of the ROM code datagraphic in total data domain Code value, is respectively compared with the original value of the corresponding each memory element in sample ROM code data, is verified result;
If the solution code value of corresponding each memory element is all consistent with original value, then the ROM code data in total data domain Figure is correct, the otherwise ROM code datagraphic mistake in total data domain.
The method of calibration of the ROM code datagraphic in the total data domain of the present invention and system, by the number of 1 storage state Boolean AND operation is carried out with the datagraphic of each memory element of the ROM code datagraphic in total data domain according to figure, Obtain the solution code value of each memory element of ROM code datagraphic in total data domain;By the ROM generation in total data domain The solution code value of each memory element of code datagraphic, divides with the original value of the corresponding each memory element in sample ROM code data Do not compare, be verified result;Carry out a text to compare, it is possible to the ROM code data in accurate validation total data domain Figure is the most correct, and whole process can be quick and convenient with full automation.
Accompanying drawing explanation
In order to be illustrated more clearly that technical scheme, below the accompanying drawing used required for the present invention is made simple Introduce, it should be apparent that, the accompanying drawing in describing below is only some embodiments of the present invention, for ordinary skill people From the point of view of Yuan, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is a line schematic diagram of the ROM code datagraphic in total data domain;
Fig. 2 is memory cell data figure Boolean AND operation schematic diagram.
Detailed description of the invention
Below in conjunction with accompanying drawing, the technical scheme in the present invention is carried out clear, complete description, it is clear that described Embodiment is a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, this area is general All other embodiments that logical technical staff is obtained on the premise of not making creative work, broadly fall into present invention protection Scope.
Embodiment one
ROM code datagraphic and master data figure form total data domain after merging.
ROM code datagraphic in total data domain corresponds to M line storage unit, and every a line is single corresponding to N number of storage Unit, Fig. 1 show a line and corresponds to 8 memory element, and N, M are positive integer, the ROM code datagraphic in total data domain Method of calibration, comprises the following steps:
One .i=1, j=1;
Two, by 1 storage state datagraphic, with the ROM code datagraphic in total data domain corresponding to jth row The datagraphic of i-th memory element carries out Boolean AND operation, if the correspondence of the ROM code datagraphic in total data domain Datagraphic in jth row i-th memory element is 1 storage status data figure, then the ROM code data in total data domain The solution code value of jth row i-th array storage unit of figure is 1, otherwise the jth row of the ROM code datagraphic in total data domain The solution code value of the i-th array storage unit is 0, as shown in Figure 2;
Three .i are from increasing 1;If i is less than or equal to N, then carries out step 2, otherwise carry out step 4;
Four .j are from increasing 1, if j is less than or equal to M, then i is entered as 1, carries out step 2;Otherwise carry out step 5;
Five. the solution code value of each memory element of the ROM code datagraphic in output total data domain;
Six. by the solution code value of each memory element of the ROM code datagraphic in total data domain, with sample ROM code The original value of the corresponding each memory element in data is respectively compared, and is verified result;
If the solution code value of corresponding each memory element is all consistent with original value, then the ROM code data in total data domain Figure is correct, the otherwise ROM code datagraphic mistake in total data domain.
Embodiment two
The check system of the ROM code datagraphic in total data domain, the ROM code datagraphic in total data domain Corresponding to M line storage unit, every a line corresponds to N number of memory element, and M, N are positive integer, the ROM code number in total data domain According to the check system of figure, including a decoder module, a comparison module;
Described decoder module, work process is as follows:
One .i=1, j=1;
Two, by 1 storage state datagraphic, with the ROM code datagraphic in total data domain corresponding to jth row The datagraphic of i-th memory element carries out Boolean AND operation, if the correspondence of the ROM code datagraphic in total data domain Datagraphic in jth row i-th memory element is 1 storage status data figure, then the ROM code data in total data domain The solution code value of jth row i-th array storage unit of figure is 1, otherwise the jth row of the ROM code datagraphic in total data domain The solution code value of the i-th array storage unit is 0;
Three .i are from increasing 1;If i is less than or equal to N, then carries out step 2, otherwise carry out step 4;
Four .j are from increasing 1, if j is less than or equal to M, then i is entered as 1, carries out step 2, otherwise carries out step 5;
Five. the solution code value of each memory element of the ROM code datagraphic in output total data domain;
Described comparison module, for the solution by each memory element of the ROM code datagraphic in total data domain Code value, is respectively compared with the original value of the corresponding each memory element in sample ROM code data, is verified result;
If the solution code value of corresponding each memory element is all consistent with original value, then the ROM code data in total data domain Figure is correct, the otherwise ROM code datagraphic mistake in total data domain.
It is also preferred that the left N is equal to 8.
The method of calibration of the ROM code datagraphic in the total data domain of the present invention and system, by the number of 1 storage state Boolean AND operation is carried out with the datagraphic of each memory element of the ROM code datagraphic in total data domain according to figure, Obtain the solution code value of each memory element of ROM code datagraphic in total data domain;By the ROM generation in total data domain The solution code value of each memory element of code datagraphic, divides with the original value of the corresponding each memory element in sample ROM code data Do not compare, be verified result;Carry out a text to compare, it is possible to the ROM code data in accurate validation total data domain Figure is the most correct, and whole process can be quick and convenient with full automation.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention Within god and principle, any modification, equivalent substitution and improvement etc. done, within should be included in the scope of protection of the invention.

Claims (4)

1. a method of calibration for the ROM code datagraphic in total data domain, the ROM code datagram in total data domain Shape corresponds to M line storage unit, and every a line corresponds to N number of memory element, and M, N are positive integer, it is characterised in that total data domain In the method for calibration of ROM code datagraphic comprise the following steps:
One .i=1, j=1;
Two, by 1 storage state datagraphic, with the ROM code datagraphic in total data domain corresponding to jth row i-th The datagraphic of individual memory element carries out Boolean AND operation, if the corresponding to of the ROM code datagraphic in total data domain The datagraphic of jth row i-th memory element is 1 storage status data figure, then the ROM code datagram in total data domain The solution code value of jth row i-th array storage unit of shape is 1, otherwise the jth row i-th of the ROM code datagraphic in total data domain The solution code value of array storage unit is 0;
Three .i are from increasing 1;If i is less than or equal to N, then carries out step 2, otherwise carry out step 4;
Four .j are from increasing 1, if j is less than or equal to M, then i is entered as 1, carries out step 2, otherwise carries out step 5;
Five. the solution code value of each memory element of the ROM code datagraphic in output total data domain;
Six. by the solution code value of each memory element of the ROM code datagraphic in total data domain, with sample ROM code data In the original value of corresponding each memory element be respectively compared, be verified result;
If the solution code value of corresponding each memory element is all consistent with original value, then the ROM code datagraphic in total data domain Correctly, the otherwise ROM code datagraphic mistake in total data domain.
The method of calibration of the ROM code datagraphic in total data domain the most according to claim 1, it is characterised in that N Equal to 8.
3. a check system for the ROM code datagraphic in total data domain, the ROM code datagram in total data domain Shape corresponds to M line storage unit, and every a line corresponds to N number of memory element, and M, N are positive integer, it is characterised in that
The check system of the ROM code datagraphic in total data domain, including a decoder module, a comparison module;
Described decoder module, work process is as follows:
One .i=1, j=1;
Two, by 1 storage state datagraphic, with the ROM code datagraphic in total data domain corresponding to jth row i-th The datagraphic of individual memory element carries out Boolean AND operation, if the corresponding to of the ROM code datagraphic in total data domain The datagraphic of jth row i-th memory element is 1 storage status data figure, then the ROM code datagram in total data domain The solution code value of jth row i-th array storage unit of shape is 1, otherwise the jth row i-th of the ROM code datagraphic in total data domain The solution code value of array storage unit is 0;
Three .i are from increasing 1;If i is less than or equal to N, then carries out step 2, otherwise carry out step 4;
Four .j are from increasing 1, if j is less than or equal to M, then i is entered as 1, carries out step 2, otherwise carries out step 5;
Five. the solution code value of each memory element of the ROM code datagraphic in output total data domain;
Described comparison module, for the solution code value by each memory element of the ROM code datagraphic in total data domain, It is respectively compared with the original value of the corresponding each memory element in sample ROM code data, is verified result;
If the solution code value of corresponding each memory element is all consistent with original value, then the ROM code datagraphic in total data domain Correctly, the otherwise ROM code datagraphic mistake in total data domain.
The check system of the ROM code datagraphic in total data domain the most according to claim 3, it is characterised in that N Equal to 8.
CN201210525187.8A 2012-12-07 2012-12-07 The method of calibration of the ROM code datagraphic in total data domain and system Active CN103853866B (en)

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CN112347723B (en) * 2020-10-31 2023-06-23 拓维电子科技(上海)有限公司 Layout-based ROM code extraction verification method and device

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CN1641795A (en) * 2004-01-17 2005-07-20 上海华虹集成电路有限责任公司 Method for verifying testing ROM
CN102496388A (en) * 2011-12-01 2012-06-13 深圳市华星光电技术有限公司 Method for examining memory code of printed circuit board
CN102800365A (en) * 2011-05-26 2012-11-28 北京兆易创新科技有限公司 Method and system for testing and calibrating nonvolatile memory

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Publication number Priority date Publication date Assignee Title
CN1641795A (en) * 2004-01-17 2005-07-20 上海华虹集成电路有限责任公司 Method for verifying testing ROM
CN102800365A (en) * 2011-05-26 2012-11-28 北京兆易创新科技有限公司 Method and system for testing and calibrating nonvolatile memory
CN102496388A (en) * 2011-12-01 2012-06-13 深圳市华星光电技术有限公司 Method for examining memory code of printed circuit board

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