CN103849852A - Method for reducing particles in furnace tube of chemical vapor deposition technology - Google Patents
Method for reducing particles in furnace tube of chemical vapor deposition technology Download PDFInfo
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- CN103849852A CN103849852A CN201210509243.9A CN201210509243A CN103849852A CN 103849852 A CN103849852 A CN 103849852A CN 201210509243 A CN201210509243 A CN 201210509243A CN 103849852 A CN103849852 A CN 103849852A
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Abstract
The invention discloses a method for reducing particles in furnace tube of a chemical vapor deposition technology. In the cooling step after the film forming process of the chemical vapor deposition technology, a circulation purifying technology is adopted to process the furnace tube, nitrogen gas and nitrous oxide are introduced into the furnace tube at the same time, thus the DCS (dichlorosilane, SiH2Cl2), which is attached to the wall of the gas discharging pipe in the film forming process, carries out reactions with the nitrous oxide, the DCS is converted into an oxidation layer, and finally the oxidation layer is discharged out of the system from the gas discharging pipe; wherein the circulation purifying technology specifically comprises the following steps: reducing the pressure in the furnace tube to a base pressure, simultaneously introducing nitrogen gas and nitrous oxide into the furnace tube, maintaining the pressure for a while, then reducing the pressure in the furnace tube to a base pressure for another time, then simultaneously introducing nitrogen gas and nitrous oxide into the furnace tube for another time, maintaining for a while, reducing for the pressure in the furnace tube to a base pressure again, and circularly repeating the processes mentioned above. The method can reduce the particles in furnace tube of the chemical vapor deposition technology, and at the same time the operation period of the technology and equipment output are not influenced.
Description
Technical field
The invention belongs to the method for manufacturing technology of semiconductor integrated circuit, be specifically related to a kind of chemical vapor deposition boiler tube technique, relate in particular to a kind of method of improving chemical vapor deposition boiler tube technique particle.
Background technology
The common film forming of nitrogen zone of oxidation, zone of oxidation in traditional chemical vapor deposition boiler tube technique is to utilize the subsidiary excessive (NH of gas
3ammonia or N
2o laughing gas), thus the particle causing while avoiding film forming increases.But existing increasing technique need to use the characteristic of Silicon-rich technique, it not only can increase etching blocking capability also can significantly increase charge storage capacity simultaneously in SONOS flush memory device technique, finally increases significantly sassafras, writes window.But the introducing of Silicon-rich has but brought comparatively serious particle issues, the frequency of safeguarding of boiler tube has been increased more than one times, even in the larger technique of silicone content, also can cause the damage of the folded valve of low-voltage equipment exhaust.
Analyze Silicon-rich technique phenomenon and why bring this series of problem, its major cause is to make it with respect to NH in the very big lifting of DCS (dichloro-dihydro silicon) flow in technique
3the ratio of (ammonia) is raised a lot, causes DCS in the time of actual film forming (dichloro-dihydro silicon) can not complete reaction complete, has a large amount of residual gases to be pumped away.But high temperature DCS (dichloro-dihydro silicon) gas is very easily attached in the vapor pipe road junction and pipeline of boiler tube after rapidly cooling, causes cleaning out completely.So, after long-term accumulation, will there will be comparatively serious particle issues.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of method of improving chemical vapor deposition boiler tube technique particle, the method does not affect for the activity duration of technique in guarantee, and ensure, in the situation of production capacity of equipment, can effectively improve the particle issues of chemical vapor deposition boiler tube technique.
For solving the problems of the technologies described above, the invention provides a kind of method of improving chemical vapor deposition boiler tube technique particle, completing in the cooling step after film forming of chemical vapor deposition boiler tube technique, utilize circularly purifying to process, pass into nitrogen and laughing gas simultaneously, thereby make front one-step film forming technique be attached to the DCS of vapor pipe tube wall (dichloro-dihydro silicon, SiH
2cl
2) react with laughing gas, make it transform into zone of oxidation, finally discharge by vapor pipe again; Described circularly purifying specifically comprises the steps: first the pressure of boiler tube to be extracted into base pressure, then passes into nitrogen, laughing gas simultaneously, maintains after certain hour, then be extracted into again base pressure, and then pass into nitrogen and laughing gas simultaneously, maintain after certain hour, be extracted into again base pressure, circulate thus.
The cycle index of described circularly purifying is more than twice.
The flow range of described nitrogen is 500sccm～10slm, and the flow range of described laughing gas is 50sccm～1slm, and temperature is identical with technique cooling step.
The described time length of taking out base pressure is 5s～10min, and the time length that nitrogen, laughing gas pass into is 10s～10min.
The described pressure by boiler tube is extracted into base pressure, and the pressure range of this base pressure is 0～5mtorr; Pressure range while passing at the same time nitrogen, laughing gas is 500mtorr～500torr.
The reaction equation that described DCS reacts with laughing gas is as follows:
Described method is applicable to the relevant high temperature oxide layer of Silicon-rich film forming, silicon oxynitride, and the silicon oxide-silicon-nitride and silicon oxide technique that contains Silicon-rich film; Described method is also applicable to high temperature polysilicon technique and nitride process.
When described method is applied to the relevant high temperature oxide layer of Silicon-rich film forming, silicon oxynitride, or when the silicon oxide-silicon-nitride and silicon oxide technique that contains Silicon-rich film, complete after deposition at silicon chip, do not spread out of in the situation of silicon chip, utilize circularly purifying to process.
In the time that described method is applied to high temperature polysilicon technique or nitride process, complete after deposition at silicon chip, need to from boiler tube, spread out of silicon chip, to carry out circularly purifying processing.
Compared to the prior art, the present invention has following beneficial effect:
Table 1: whether Silicon-rich film circularly purifying applies contrast table
The present invention is mainly at the cooling step completing after the relevant film forming of Silicon-rich, utilizes circularly purifying (cycle purge) to process, and passes into laughing gas simultaneously in the time that logical nitrogen carries out circularly purifying again.Thereby the DCS (dichloro-dihydro silicon) that front step process is attached to vapor pipe tube wall reacts, and makes it transform into zone of oxidation, finally discharges by vapor pipe again.The pressure of circularly purifying, flow as shown in Figures 1 and 2, first by the base pressure that is extracted into of boiler tube, then pass into nitrogen, laughing gas is then extracted into base pressure again, circulate thus.Its final result as shown in Table 1 above, has obtained obvious improvement in the particle situation of having utilized ONO technique after circularly purifying technique.This invention is simultaneously owing to being in silicon oxynitride, the aftertreatment of silicon oxide film film forming, and owing to only passing into laughing gas, therefore less for membranous impact, this invention is simultaneously to process in boiler tube technique temperature-fall period, therefore do not affect for the activity duration of technique, ensured the production capacity of equipment.
Brief description of the drawings
Fig. 1 is the tonogram of Silicon-rich film circularly purifying in the embodiment of the present invention 1.
Fig. 2 is the flow diagram of Silicon-rich film circularly purifying in the embodiment of the present invention 1.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.
Embodiment 1
The present invention is mainly in the cooling step completing after the relevant film forming of Silicon-rich, completes after deposition at silicon chip, does not spread out of in the situation of silicon chip, utilizes circularly purifying (cycle purge) to process, and passes into nitrogen and laughing gas simultaneously.Thereby the DCS (dichloro-dihydro silicon) that front step process is attached to vapor pipe tube wall reacts, and makes it transform into zone of oxidation, finally discharges by vapor pipe again.Wherein the pressure of circularly purifying, flow are as shown in Figures 1 and 2, described circularly purifying specifically comprises the steps: first the pressure of boiler tube to be extracted into base pressure, the pressure range of described base pressure is 0～5mtorr, then pass into nitrogen, laughing gas simultaneously, maintain after certain hour, be then extracted into again base pressure, and then pass into nitrogen and laughing gas simultaneously, maintain after certain hour, then be extracted into base pressure, circulate thus.Nitrogen flow scope is 500sccm～10slm, laughing gas flow range is 50sccm～1slm, pressure range while simultaneously passing into nitrogen, laughing gas is 500mtorr～500torr, temperature is identical with technique cooling step, the time length of taking out base pressure is 5s～10min, and it is 10s～10min that nitrogen, laughing gas pass into the time length.Circulate thus, cycle index is more than twice.Passing in the process of nitrogen, laughing gas, front step process is attached to the DCS (dichloro-dihydro silicon) of vapor pipe tube wall and the reaction equation of laughing gas is as follows:
This invention is owing to being in silicon oxynitride, the aftertreatment of silicon oxide film film forming, and owing to only passing into laughing gas, do not pass into NH
3(ammonia), therefore less for membranous impact, this invention is simultaneously to process in boiler tube technique temperature-fall period, does not therefore affect for the activity duration of technique, has ensured the production capacity of equipment.
Embodiment 2
Present method is also applicable to high temperature polysilicon (poly) technique and silicon nitride (SiN) technique.With the related process difference of embodiment 1 Silicon-rich film forming be, in the time carrying out circularly purifying, need to from boiler tube, spread out of silicon chip, to prevent that laughing gas from producing unnecessary impact to the deposited film on silicon chip.
Claims (9)
1. one kind is improved the method for chemical vapor deposition boiler tube technique particle, it is characterized in that, completing in the cooling step after film forming of chemical vapor deposition boiler tube technique, utilize circularly purifying to process, pass into nitrogen and laughing gas simultaneously, thereby the dichloro-dihydro silicon that makes front one-step film forming technique be attached to vapor pipe tube wall reacts with laughing gas, makes it transform into zone of oxidation, finally discharges by vapor pipe again; Described circularly purifying specifically comprises the steps: first the pressure of boiler tube to be extracted into base pressure, then passes into nitrogen, laughing gas simultaneously, maintains after certain hour, then be extracted into again base pressure, and then pass into nitrogen and laughing gas simultaneously, maintain after certain hour, be extracted into again base pressure, circulate thus.
2. the method for claim 1, is characterized in that, the cycle index of described circularly purifying is more than twice.
3. the method for claim 1, is characterized in that, the flow range of described nitrogen is 500sccm～10slm, and the flow range of described laughing gas is 50sccm～1slm, and temperature is identical with technique cooling step.
4. the method for claim 1, is characterized in that, described in take out base pressure time length be 5s～10min, the time length that nitrogen, laughing gas pass into is 10s～10min.
5. the method for claim 1, is characterized in that, the described pressure by boiler tube is extracted into base pressure, and the pressure range of this base pressure is 0～5mtorr; Pressure range while passing at the same time nitrogen, laughing gas is 500mtorr～500torr.
6. the method for claim 1, is characterized in that, the reaction equation that described dichloro-dihydro silicon reacts with laughing gas is as follows:
7. the method for claim 1, is characterized in that, described method is applicable to the relevant high temperature oxide layer of Silicon-rich film forming, silicon oxynitride, and the silicon oxide-silicon-nitride and silicon oxide technique that contains Silicon-rich film; Or described method is applicable to high temperature polysilicon technique and nitride process.
8. method as claimed in claim 7, it is characterized in that, when described method is applied to the relevant high temperature oxide layer of Silicon-rich film forming, silicon oxynitride, or when the silicon oxide-silicon-nitride and silicon oxide technique that contains Silicon-rich film, complete after deposition at silicon chip, do not spread out of in the situation of silicon chip, utilize circularly purifying to process.
9. method as claimed in claim 7, is characterized in that, in the time that described method is applied to high temperature polysilicon technique or nitride process, completes after deposition at silicon chip, need to from boiler tube, spread out of silicon chip, to carry out circularly purifying processing.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105112885A (en) * | 2015-08-31 | 2015-12-02 | 清远先导材料有限公司 | Chemical vapor deposition furnace with material removing device |
| CN108660436A (en) * | 2018-05-18 | 2018-10-16 | 上海华虹宏力半导体制造有限公司 | The blowing method of silicon nitride reacting furnace |
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| CN1396637A (en) * | 2001-06-21 | 2003-02-12 | 联华电子股份有限公司 | Process for preparing silicon-oxygen layer |
| US20030145876A1 (en) * | 2002-02-05 | 2003-08-07 | Pen Chen Shih | Pressure sensing method for determining gas clean end point |
| CN1644251A (en) * | 2004-01-20 | 2005-07-27 | 台湾积体电路制造股份有限公司 | Chamber cleaning method |
| CN1720347A (en) * | 2002-11-30 | 2006-01-11 | 因芬尼昂技术股份公司 | Method for cleaning a process chamber |
| CN102394222A (en) * | 2011-11-24 | 2012-03-28 | 上海宏力半导体制造有限公司 | Method for preventing solid particle formation on wafer surface |
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2012
- 2012-12-03 CN CN201210509243.9A patent/CN103849852A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1396637A (en) * | 2001-06-21 | 2003-02-12 | 联华电子股份有限公司 | Process for preparing silicon-oxygen layer |
| US20030145876A1 (en) * | 2002-02-05 | 2003-08-07 | Pen Chen Shih | Pressure sensing method for determining gas clean end point |
| CN1720347A (en) * | 2002-11-30 | 2006-01-11 | 因芬尼昂技术股份公司 | Method for cleaning a process chamber |
| CN1644251A (en) * | 2004-01-20 | 2005-07-27 | 台湾积体电路制造股份有限公司 | Chamber cleaning method |
| CN102394222A (en) * | 2011-11-24 | 2012-03-28 | 上海宏力半导体制造有限公司 | Method for preventing solid particle formation on wafer surface |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105112885A (en) * | 2015-08-31 | 2015-12-02 | 清远先导材料有限公司 | Chemical vapor deposition furnace with material removing device |
| CN105112885B (en) * | 2015-08-31 | 2018-01-26 | 清远先导材料有限公司 | A kind of chemical vapor deposition stove with material-clearing device |
| CN108660436A (en) * | 2018-05-18 | 2018-10-16 | 上海华虹宏力半导体制造有限公司 | The blowing method of silicon nitride reacting furnace |
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Application publication date: 20140611 |