CN103840677B - Power conversion unit - Google Patents
Power conversion unit Download PDFInfo
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- CN103840677B CN103840677B CN201310581018.0A CN201310581018A CN103840677B CN 103840677 B CN103840677 B CN 103840677B CN 201310581018 A CN201310581018 A CN 201310581018A CN 103840677 B CN103840677 B CN 103840677B
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Abstract
A kind of power conversion unit is provided, easily can be shared measured current in the state of the power conversion unit is installed.It is connected in series the first semiconductor circuit of the first side of the positive electrode switch element and the first negative side switch element,It is connected in parallel with the second semiconductor circuit for being connected in series the second side of the positive electrode switch element and the second negative side switch element,Thus it is responsible for a phase power conversion of exchange,First and second semiconductor circuits are modular respectively,The first semiconductor circuit being modular has as the first ac terminal of the first side of the positive electrode switch element and the tie point of the first negative side switch element,The second semiconductor circuit being modular has as the second ac terminal of the second side of the positive electrode switch element and the tie point of the second negative side switch element,The the first exchange conductor for connecting the first ac terminal and load is connected from the second ac terminal of connection and the second exchange conductor of load at the third terminal different with the first and second ac terminals.
Description
Technical field
A kind of power conversion unit of the module being connected in series by thyristor the present invention relates to use, especially
It is to be related to a kind of structure of the power conversion unit installed and be connected in parallel multiple modules and constitute.
Background technology
Using the power conversion unit of the high speed thyristors such as insulated gate bipolar transistor (IGBT) at each
Field is widely applied.Especially in recent years, with the progress of semiconductor technology, large-capacity semiconductor mould is had been realized in
Block.It is inverse by constituting in addition to being widely applied by the module of each semiconductor switch module in terms of modularization
The semiconductor module of the arm that the semiconductor switch up and down of the arm of change device is combined into a module and constitutes also has been obtained extensively
Application.Additionally, in order to realize high capacity, it is sometimes desirable to which the semiconductor module for being connected in parallel multiple arms is used.
As described above, in order to realize high capacity, it is impossible to avoid the semiconductor module of arm from being connected in parallel, will partly lead
, it is necessary to make the electric current of each semiconductor element module share equalization, otherwise, semiconductor element module when module is connected in parallel
Use condition or the life-span will be influenceed by the semiconductor element module of the big side of load.Accordingly, it would be desirable to make each partly
The electric current of conductor element module shares realization balance.
When the semiconductor module to arm is connected in parallel, as the main cause of influence electric current equalization, can be with
Enumerate difference of the property difference of semiconductor element, the difference of gate driving circuit and primary circuit route inductance etc..Therefore, if
Taken some countermeasures respectively for above-mentioned each reason, electric current equalization can be realized.
Used as specific countermeasure, such as in terms of the difference of element characteristic, being taken through selecting mostly makes connection arranged side by side
There is the measures such as identical characteristics between element.In terms of gate driving circuit, take and set altogether relative to the element of connection arranged side by side
With driving power supply circuit and the length of grid wiring is set as the countermeasures such as equal length.
Additionally, in terms of the equalization of primary circuit route inductance, patent document 1 can be included and the institute of patent document 2 is public
The method opened.In patent document 1, employing reduces as the smoothing capacity device and upper and lower IGBT cycling circuits of dc source
Inductance simultaneously makes the structure of its equalization, as shown in Figure 23 of patent document 1, positive pole conductor and cathode conductor is arranged into stacking and is led
Body.
In patent document 2, in order to suppress from the inductance of the ac terminal direction load of the IGBT module being connected in parallel
Unevenness, takes the countermeasure that otch etc. is set on conductor.
Patent document 1：TOHKEMY 2007-151286 publications
Patent document 2：TOHKEMY 2012-95472 publications
As described above, implementing various countermeasures from above-mentioned each viewpoint.Below to semiconductor element therein
The difference of characteristic is described in detail.In terms of the characteristic of semiconductor switch IGBT is screened, due to for domination conduction losses
Divided grades of saturation voltage Vce (sat) etc., so easily selected.But, threshold voltage of the grid is not selected generally
Vge (th) and input capacity Cies.In this case, if the difference of semiconductor element characteristic is excessive, electric current can be produced
Uneven situations such as.
Therefore, in power conversion unit, be connected in parallel the semiconductor module of arm and be finally arranged on housing (or
Storage tray) in the state of, because the packing density of the wiring conductor around IGBT module is high, so installing power conversion
In the state of device, it is difficult to the electric current between the semiconductor module of multiple arms is shared and is surveyed.
The content of the invention
In view of the foregoing, problem to be solved by this invention is to provide and a kind of is installing the state of power conversion unit
Under also being capable of structure that easily measured current is shared.
In order to solve above-mentioned problem, the present invention provides a kind of power conversion unit, and it carries out work(between AC and DC
Rate is converted, and the power conversion unit is characterised by, is connected in series the first side of the positive electrode switch element and the first negative side switch
First semiconductor circuit of element and it is connected in series the second side of the positive electrode switch element and the second negative side switch element is formed
The second semiconductor circuit be connected in parallel, be thus responsible for a phase power conversion of exchange, the first semiconductor circuit and the second half
Conductor circuit is modular respectively, and the first semiconductor circuit being modular has as the first side of the positive electrode switch element and first
First ac terminal of the tie point of negative side switch element, the second semiconductor circuit being modular has as the second positive pole
Second ac terminal of the tie point of side switch element and the second negative side switch element, the first ac terminal of connection and load
First exchange conductor is exchanged with the second exchange conductor for being connected the second ac terminal and load with the first ac terminal and second
It is connected at the different third terminal of terminal.
(invention effect)
By using said structure, the feelings such as current unevenness can be easily observed in the state of power conversion unit is installed
Condition.
Brief description of the drawings
Fig. 1 represents the structure for being connected in parallel multiple semiconductor modules.
Fig. 2 represents the example of the power conversion unit being made up of two groups of ac-dc conversion circuits.
Fig. 3 (a) represents the front of the structure for being connected in parallel semiconductor module.
Fig. 3 (b) represents side view when being provided with semiconductor module on both faces.
Fig. 4 represents the example of the power conversion unit for being mounted with to be made up of in housing two groups of ac-dc conversion circuits.
Fig. 5 is denoted as the structure of the common terminal for connecting TBU3 of U phases of common terminal for connecting TB.
Fig. 6 represents the example of the electric current for measuring.
Symbol description：
1A、1B：Ac-dc conversion circuit
S、SBU、SBV、SBW、SAR、SAS、SAT：Thyristor
C：Smoothing capacity device
R、S、T：The phase of three-phase alternating current
U、V、W：The phase of three-phase alternating current
M、MBU、MBV、MBW、MAR、MAS、MAT：The semiconductor element module of arm
DC：DC circuit
DC+：Side of the positive electrode
DC-：Negative side
MBUa、MBUb：The semiconductor element module of the arm being connected in parallel
TBUa1、TBUa2、TBUb1、TBUb2：DC terminal
TBUa3、TBUb3：Ac terminal
13：Cooling block
12：Cooler
TBU3：Common terminal for connecting
LBUa、LBUb：Wiring
Specific embodiment
Hereinafter, with reference to the accompanying drawings of embodiments of the present invention.
Below in an example, illustrate built-in 2 IGBT as thyristor of switch module difference and
The situation of the recirculation diode being connected in antiparallel with IGBT, but it is also possible to using the other switch elements beyond IGBT.
Embodiment 1
Fig. 2 represents the example of the power conversion unit being made up of two groups of ac-dc conversion circuits.In fig. 2, two groups of friendships are straight
Stream translation circuit 1A, 1B are the three-phase translation circuits for employing thyristor S (such as IGBT), by ac-dc conversion electricity
Exchange conversion is direct current by a side (such as 1A) in road 1A, 1B, and via DC circuit, by ac-dc conversion circuit 1A,
DC converting is exchange by the opposing party (such as 1B) in 1B.
Specifically, in the ac-dc conversion circuit 1B for carrying out invertor operation, using smoothing capacity device C as direct current
Source, according to the trigger signal from control device (not shown), makes each switch element SBU, SBV, SBW disconnect (OFF)/conducting
(ON), thus desired electric power is supplied to load-side (U, V, W phase side).Entering the ac-dc conversion circuit 1A of line transformer operation
In, according to the trigger signal from control device (not shown), each switch element SAR, SAS, SAT is disconnected/conducting, thus
AC power (R, S, T-phase side) is transformed into direct current to be charged with to smoothing capacity device C.
In control device (not shown), detection flows in and out the electric current of power conversion unit, DC circuit part
Speed of voltage and motor etc., is controlled to power conversion unit.Additionally, being eliminated for driving switch element in figure
Gate circuit diagram, and eliminate the diagram of the buffer circuit for pressure-resistant protection for connecting as needed.
During the present invention can not only be applied to two groups of power conversion units 1 of ac-dc conversion circuit 1A, 1B, and
The work(being made up of the one group of ac-dc conversion circuit (1A or 1B) for entering line translation between AC and DC can also be applied to
In rate converting means.
In fig. 2, ac-dc conversion circuit 1A is connected with the alternating current circuit represented with R, S, T-phase, ac-dc conversion circuit
1B is connected with the alternating current circuit represented with U, V, W phase.Additionally, the thyristor S in ac-dc conversion circuit 1A, 1B is adopted
With three wiring of phase cell Ritz (Graetz connection) modes, symbol A, B on thyristor S represent that it is position
In the element of ac-dc conversion circuit 1A and 1B sides.Symbol R, S, T and U, V, W represent each phase of three-phase alternating current.Additionally, passing through
Symbol 1,2 on thyristor S distinguishes the element (1) of the positive side in arm configuration and the element (2) of minus side.
In addition, symbol M represents the semiconductor element module of arm, be added to symbol A, B and symbol R of M, S, T, U, V,
W is as described above, for distinguishing ac-dc conversion circuit 1A and 1B and representing each phase of three-phase alternating current.
From the implication of above-mentioned symbol it is recognised that such as MAR represents the arm being connected with the R of ac-dc conversion circuit 1A
Semiconductor element module, MBU represents the semiconductor element module of the arm being connected with the U of ac-dc conversion circuit 1B.By
Can also be understood using identical method in the semiconductor element module of other arms, so omitting the half of each arm herein
The explanation of conductor element module.
In addition, being gone here and there as such as MAR and 2 thyristor SAR1 and SAR2 of the semiconductor element module of arm
Connection connection, the negative side terminal of side of the positive electrode switch element SAR1 and the positive pole side terminal of negative side switch element SAR2, exchanges
Terminal is connected by the conductor of inside modules.Additionally, 2 the two of thyristor SAR1 and SAR2 be connected in series
End is connected with the side of the positive electrode DC+ and negative side DC- of DC circuit DC.Also, DC circuit DC is provided with flat between both positive and negative polarity
Sliding capacitor C.
Fig. 1 represents the structure that a semiconductor module for arm in Fig. 2 has further been connected in parallel multiple.Here,
As the semiconductor module of arm, the example of MBU is shown.The half of the arm being connected in the U with ac-dc conversion circuit 1B
In conductor element module MBU, MBUa and MBUb are connected in parallel.
As shown in figure 1, side of the positive electrode switch element SBU11 and negative side switch element SBU21 is made up of a module MBUa.
Equally, side of the positive electrode switch element SBU12 and negative side switch element SBU22 are also made up of a module MBUb.Additionally, side of the positive electrode
Switch element SBU11 and SBU12 are connected in parallel, and negative side switch element SBU21 and SBU22 are connected in parallel.In addition, side of the positive electrode
The conductor of conductor and negative side is installed using making the inductance of the switch module being connected in parallel become uniform mode.
As the ac terminal TBUa3 of side of the positive electrode switch element SBU11 and the tie point of negative side switch element SBU21,
With as the ac terminal TBUb3 of side of the positive electrode switch element SBU12 and the tie point of negative side switch element SBU22 in terminal
It is connected at TBU3, constitutes 2 structures of input and output arranged side by side of coupling.
In addition, being arranged on the rear class after coupling for the current detector 11 in the control of power conversion unit 1.Although not
Illustrate in detail, but other two phases are also adopted by identical structure.
Hereinafter, the external connection relation further to 2 modules is described in detail.The semiconductor element module of arm
MBUa and MBUb have respectively for the DC terminal (TBUa1, TBUa2, TBUb1, TBUb2) that is connected with direct current trackside and
For the ac terminal (TBUa3 and TBUb3) being connected with alternating current trackside (U phases).DC terminal (TBUa1 and TBUb1) with it is straight
The positive pole DC+ connections of current circuit, DC terminal (TBUa2 and TBUb2) is connected with the negative pole DC- of DC circuit.
In the present invention, the ac terminal (TBUa3 and TBUb3) that will be used to be connected with alternating current trackside (U phases) connects jointly
Connect, common terminal for connecting TBU3 configuration from ac terminal (TBUa3 and TBUb3) via wiring LBUa, LBUb farther out
On position.Additionally, as be described hereinafter diagrammatically shown, the common terminal for connecting TBU3 of U phases and the common terminal for connecting of other phases
Configured after collecting at same position.
Fig. 3 (a) represents the top view of the structure of the semiconductor module for being connected in parallel arm.Shown on top view
The device configuration of U phases.In Fig. 3 (a), 13 represent cooling blocks, be equipped with cooling block 13 arm semiconductor module MBUa and
MBUb, and cooling block 13 to the heat produced by semiconductor module for radiating.In addition, semiconductor module produce heat from
Cooling block 13 is delivered to cooler 12 so as to external cooling.
In Fig. 3 (a), 4 switch element SBU11, SBU12 in being equipped with Fig. 1 on the cooling block 13 of cooler 12,
SBU21, namely SBU22,2 modules MBUa and MBUb.The cooler of heat pipe-type is illustrated herein, but it is also possible to using radiating
Piece (heat sink).
Installation preferably consider it is following some.First, in order to suppress leaping voltage when switch module is acted, having must
Reduce the inductance of the cycling circuit being made up of module and smoothing capacity device C.Therefore, in installation 2 modules MBUa and MBUb
During part, by the centrally disposed side of the DC terminal of 2 modules, and ac terminal TBUa3 and TBUb3 is pacified towards outside
Dress, especially in the DC terminal of 2 modules of installation, is mounted to positive terminal opposite with negative terminal.Fig. 3's (a)
In example, positive terminal TBUa1 is configured on opposite position with negative terminal TBUb2, positive terminal TBUb1 and negative pole end
Sub- TBUa2 is configured on opposite position.
In addition, the installation site of smoothing capacity device C is not shown, it is used makes the inductance between switch module become equalization
Mode is installed.Additionally, eliminating the diagram of conductor wiring in figure.
The semiconductor module MBUa and MBUb of arm respectively have DC terminal (TBUa1, TBUa2, TBUb1, TBUb2) with
And ac terminal (TBUa3 and TBUb3).It is by connecting up LBUa between ac terminal TBUa3 and common terminal for connecting TBU3
Connection, connected by connecting up LBUb between ac terminal TBUb3 and common terminal for connecting TBU3.As described above, 2
Wiring LBUa, LBUb are directed into the common terminal for connecting TBU3 of U phases and are connected, and export to outside as U phase terminals.This
Outward, although not shown, but DC terminal TBUa1 and TBUb1 are commonly connected to the positive pole of DC circuit DC, DC terminal TBUa2
With the negative pole that TBUb2 is commonly connected to DC circuit DC.
Fig. 3 (a) represents the front of the structure of the semiconductor module for being connected in parallel arm.By overleaf using identical
Configuration structure, packing density can be improved.Fig. 3 (b) represents the side view when two faces are installed.Carried out in two faces
The phase at back side during installation can be other phases in identical ac-dc conversion circuit, and according to shown in Fig. 2 by two groups of friendships
The power conversion unit that DC transfer circuit is constituted, preferably overleaf sets the phase in other ac-dc conversion circuits.
Fig. 3 (b) shows R phases, the i.e. semiconductor module of arm overleaf constituted in other ac-dc conversion circuits 1A
The example of MAR.In addition, in the power conversion unit 1 being made up of two groups of ac-dc conversion circuits 1A, 1B shown in Fig. 2, making one
The ac-dc conversion circuit of side plays the effect of converter, and makes the work of the ac-dc conversion circuit performance inverter of the opposing party
With, therefore the structure of Fig. 3 should be referred to as the facies unit of converter/inverter one.Additionally, overleaf, the semiconductor module MAR of arm by
MARa and MARb is constituted, and is imported into the common terminal for connecting TBR3 of R phases from this 2 wirings LARa, LARb stretching out and is connected
Connect, and derived to outside as R phase terminals.Additionally, the common connection end of the common terminal for connecting TBU3 of U phases and R phases
Sub- TBR3 is configured on common terminal board TUR3 together.
When Fig. 4 shows to be accommodated in the power conversion unit being made up of two groups of ac-dc conversion circuits of Fig. 2 in housing 10
Figure, represent door before housing open in the state of it can be seen that part configuration relation.In 3 groups of converter/inverters
A facies unit Y (YUR, YVS, YWT) in, the position relationship of short transverse is that cooler 12 is configured and matched somebody with somebody in upside, cooling block 13
Put in downside, 3 groups are configured in the horizontal.Terminal board T is configured in the face in front of the door of housing 10.Terminal board T is held by 3 of arranged in series
Sub- platform TUR, TVS, TWT are constituted.
Wherein, terminal board TUR is provided with the common terminal for connecting TBU3 of U phases and the common terminal for connecting of R phases
TBR3, similarly, the common terminal for connecting TBV3 of V phases and the common terminal for connecting of S-phase is provided with terminal board TVS
TBS3, the common terminal for connecting TBW3 of the W phases and common terminal for connecting TBT3 of T-phase is provided with terminal board TWT.From simultaneously
The wiring for joining the semiconductor module of the arm of connection is fed to each common terminal for connecting so as to be joined together.
Fig. 5 is denoted as the structure of the common terminal for connecting TBU3 of the U phases of common terminal for connecting TB.From same phase
Multiple arms semiconductor module MBUa, MBUb wiring LBUa, LBUb at common terminal for connecting TBU3 be connected and
Form U phases.
In housing 10, in addition to foregoing circuit component, also it is accommodated with the smoothing capacity device C of DC circuit or is used for
Wiring of various connecting lines etc..Therefore, narrow space in housing, in general, in the state of power conversion unit is installed
The electric current being difficult between the semiconductor module to multiple arms is shared and being surveyed.
On the other hand, in the present invention, can be in the common terminal for connecting of the terminal board T being arranged at before housing 10
Part, the electric current to the semiconductor module of multiple arms is surveyed.For example, in the common terminal for connecting of the U phases shown in Fig. 5
The terminal being connected with two groups of semiconductor modules is prepared on TBU3, it is possible to measuring each electric current in the part.
When being configured using the part shown in Fig. 3 and Fig. 4, switch module MAR, MAS, MAT, MBU in each phase of Fig. 1,
In MBV, MBW, ac terminal is configured in outside, so as shown in figure 1, in structure can be logical in the prime of coupling terminal TBU3
Cross general current detector observation flow through the first semiconductor module ac terminal TBUa3 electric current and led by the second half
The ac terminal TBUb3 of module and the electric current that flows, the inequality thus, it is possible to observe electric current in the state of after installation is complete
Even property.
Fig. 6 represents the waveform example measured by the present invention.Fig. 6 shows each several part electric current of U phases corresponding with Fig. 1,
Iu represents the U phase currents detected by current detector 11, and iua represents the mould of the U phase currents detected by current detector 11a
The electric current of block MBUa sides, iub represents the electric current of the module MBUb sides of the U phase currents detected by current detector 11b.
The power conversion unit of the invention of detailed description above is illustrated the following is the U phase structures with Fig. 1, it has：
First be connected in series by the first side of the positive electrode switch element SBU11 and the first negative side switch element SBU21
Semiconductor circuit MBUa；And
Second be connected in series by the second side of the positive electrode switch element SBU12 and the second negative side switch element SBU22
Semiconductor circuit MBUb；And
Have：As the of the tie point of the first side of the positive electrode switch element SBU11 and the first negative side switch element SBU21
One ac terminal TBUa3；And
As the second friendship of the second side of the positive electrode switch element SBU12 and the tie point of the second negative side switch element SBU22
Stream terminal TBUb3,
Connect the first ac terminal TBUa3 and the second ac terminal TBUb3 of conductor LBUa and connection is exchanged with the first of load
With load second exchanges conductor LBUb in the threeth ac terminal TBU3 different from the first ac terminal and the second ac terminal
Place is connected.
Claims (7)
1. a kind of power conversion unit, it carries out power conversion between AC and DC, and the feature of the power conversion unit exists
In,
The first semiconductor circuit and the second semiconductor circuit are connected in parallel, wherein, first semiconductor circuit is connected in series first
Side of the positive electrode switch element and the first negative side switch element are formed, and second semiconductor circuit is connected in series the second side of the positive electrode switch
Element and the second negative side switch element are formed, and are thus responsible for a phase power conversion of the exchange, first semi-conductor electricity
Road and second semiconductor circuit are modular respectively,
First semiconductor circuit being modular has as the first side of the positive electrode switch element and first negative pole
First ac terminal of the tie point of side switch element,
Second semiconductor circuit being modular has as the second side of the positive electrode switch element and second negative pole
Second ac terminal of the tie point of side switch element,
Connect the first exchange conductor and for being connected second ac terminal and loading of first ac terminal and load
Two exchange conductors are connected at common terminal for connecting, and the common terminal for connecting is different from first ac terminal and institute
State the second ac terminal.
2. power conversion unit as claimed in claim 1, it is characterised in that
First semiconductor circuit being modular and second semiconductor circuit configuration are constituted on the front of cooling block
First semiconductor circuit being modular of other phases of the exchange and second semiconductor circuit configuration are in cooling
On the back side of block.
3. power conversion unit as claimed in claim 2, it is characterised in that
The power conversion unit is made up of the first ac-dc conversion circuit and the second ac-dc conversion circuit, wherein, this first
First exchange conversion is direct current by ac-dc conversion circuit, and the DC converting is the second friendship by second ac-dc conversion circuit
Stream,
First semiconductor being modular of first ac-dc conversion circuit is configured on the front of the cooling block
Circuit and second semiconductor circuit, configured on the back side of the cooling block second ac-dc conversion circuit by mould
First semiconductor circuit and second semiconductor circuit of block, are consequently formed a facies unit of converter/inverter.
4. the power conversion unit as described in any one of claims 1 to 3, it is characterised in that
Each member storage of power conversion unit is constituted in housing, the common terminal for connecting configures the opening door in housing
When be located at positive position on.
5. power conversion unit as claimed in claim 3, it is characterised in that
At least one party during first exchange is exchanged with described second is three-phase alternating current,
Each member storage of power conversion unit is constituted in housing, a facies unit of converter/inverter described in 3 groups is by side by side
Configure and be accommodated in housing.
6. power conversion unit as claimed in claim 5, it is characterised in that
Each member storage of power conversion unit is constituted in housing, the facies unit with 3 groups of converter/inverters is distinguished
The corresponding multiple common terminal for connecting configuration is located on positive position in the opening door of housing.
7. the power conversion unit as described in any one of claims 1 to 3, it is characterised in that
The electric current of the first exchange conductor is flowed through in the common terminal for connecting part observation, second exchange is flowed through and is led
The electric current of body and the resultant current for flowing through the common terminal for connecting.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-255004 | 2012-11-21 | ||
| JP2012255004A JP5950800B2 (en) | 2012-11-21 | 2012-11-21 | Power converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103840677A CN103840677A (en) | 2014-06-04 |
| CN103840677B true CN103840677B (en) | 2017-06-20 |
Family
ID=50803890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310581018.0A Active CN103840677B (en) | 2012-11-21 | 2013-11-18 | Power conversion unit |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5950800B2 (en) |
| CN (1) | CN103840677B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1120737A (en) * | 1994-06-17 | 1996-04-17 | Abb管理有限公司 | Semiconductor module with low inductance power |
| CN202406038U (en) * | 2011-12-02 | 2012-08-29 | 江苏大全凯帆电器股份有限公司 | IGBT (insulated gate bipolar transistor) module with double-transistor parallel connection unit of wind power converter |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0578196U (en) * | 1992-03-18 | 1993-10-22 | 株式会社東芝 | Power conversion unit |
| JP2002010653A (en) * | 2000-06-21 | 2002-01-11 | Nippon Densan Corp | Motor-driving circuit |
| US8237423B2 (en) * | 2008-07-18 | 2012-08-07 | Intersil Americas Inc. | Active droop current sharing |
| JP5289536B2 (en) * | 2011-11-04 | 2013-09-11 | 三菱電機株式会社 | Power semiconductor module |
-
2012
- 2012-11-21 JP JP2012255004A patent/JP5950800B2/en active Active
-
2013
- 2013-11-18 CN CN201310581018.0A patent/CN103840677B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1120737A (en) * | 1994-06-17 | 1996-04-17 | Abb管理有限公司 | Semiconductor module with low inductance power |
| CN202406038U (en) * | 2011-12-02 | 2012-08-29 | 江苏大全凯帆电器股份有限公司 | IGBT (insulated gate bipolar transistor) module with double-transistor parallel connection unit of wind power converter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014103803A (en) | 2014-06-05 |
| CN103840677A (en) | 2014-06-04 |
| JP5950800B2 (en) | 2016-07-13 |
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