CN103840677A - Power changing device - Google Patents
Power changing device Download PDFInfo
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- CN103840677A CN103840677A CN201310581018.0A CN201310581018A CN103840677A CN 103840677 A CN103840677 A CN 103840677A CN 201310581018 A CN201310581018 A CN 201310581018A CN 103840677 A CN103840677 A CN 103840677A
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Abstract
A power changing device is provided; current share actual measurement can be easily carried out under a state in which the power changing device is installed; a first anode side switch element and a first cathode side switch element are connected in series to form a first semiconductor circuit; a second anode side switch element and a second cathode side switch element are connected in series to form a second semiconductor circuit; the first and second semiconductor circuits are connected in parallel so as to carry out AC single-phase power change, and are respectively modularized; the modularized first semiconductor circuit comprises a first AC terminal being a connecting point between the first anode side switch element and the first cathode side switch element; the modularized second semiconductor circuit comprises a second AC terminal being a connecting point between the second anode side switch element and the second cathode side switch element; a first AC conductor connecting the first AC terminal with a load and a second AC conductor connecting the second AC terminal with a load are connected on a third terminal portion different from the first and second AC terminals.
Description
Technical field
The present invention relates to a kind of use is connected in series the module forming power conversion unit by thyristor, especially relate to that a kind of installation is connected in parallel multiple modules and the structure of the power conversion unit that forms.
Background technology
Adopt the power conversion unit of the high speed thyristors such as insulated gate bipolar transistor (IGBT) to be widely applied in every field.Especially in recent years,, along with the progress of semiconductor technology, realized large-capacity semiconductor module.Aspect modularization, except the module being formed by each semiconductor switch module is widely applied, the semiconductor switch up and down of arm that forms inverter is combined into a module and the semiconductor module of the arm that forms is also widely used.In addition,, in order to realize high capacity, the semiconductor module of multiple arms that sometimes need to be connected in parallel is used.
As mentioned above, in order to realize high capacity, cannot avoid being connected in parallel of semiconductor module of arm, in the time that semiconductor module is connected in parallel, need to make the electric current of each semiconductor element module share equalization, otherwise the service condition of semiconductor element module or life-span are by the impact of the large side's that is subject to loading semiconductor element module.Therefore, need to make the electric current of each semiconductor element module share and realize balance.
In the time that the semiconductor module of arm is connected in parallel, as the main cause that affects electric current equalization, can enumerate property difference, the difference of gate driver circuit and the difference of primary circuit route inductance etc. of semiconductor element.Therefore,, if take some countermeasures respectively for above-mentioned each reason, can realize electric current equalization.
As concrete countermeasure, for example, aspect the difference of element characteristic, between the element of mostly taking to make to connect side by side by selection, there is the measures such as identical characteristics.Aspect gate driver circuit, take common driving power circuit to be set and by countermeasures such as the length setting of grid wiring are equal length with respect to the element of connection arranged side by side.
In addition,, aspect the equalization of primary circuit route inductance, can list patent documentation 1 and the disclosed method of patent documentation 2.In patent documentation 1, adopt and reduced as the smmothing capacitor of DC power supply and the inductance of upper and lower IGBT cycling circuit and make the structure of its equalization, as shown in Figure 23 of patent documentation 1, anodal conductor and cathode conductor are arranged to laminated conductor.
In patent documentation 2, in order to suppress the ac terminal of the IGBT module from being connected in parallel towards the unevenness of the inductance of load, take to arrange the countermeasure of otch etc. on conductor.
Patent documentation 1:JP JP 2007-151286 communique
Patent documentation 2:JP JP 2012-95472 communique
As mentioned above, various countermeasures have been implemented from above-mentioned each viewpoint.Below the difference of semiconductor element characteristic is wherein elaborated.Aspect the characteristic of examination semiconductor switch IGBT, owing to having divided grade etc. for the saturation voltage Vce (sat) of domination conducting loss, so easily select.But, conventionally do not select threshold voltage of the grid Vge (th) and input capacity Cies.In this case, if the difference of semiconductor element characteristic is excessive, the situation such as can generation current inhomogeneous.
Therefore, in power conversion unit, at the semiconductor module of the arm that is connected in parallel and be finally arranged under the state in housing (or storage tray), because the packing density of IGBT module wiring conductor is around high, so under the state that installs power conversion unit, be difficult to the electric current between the semiconductor module of multiple arms to share and surveying.
Summary of the invention
In view of the foregoing, problem to be solved by this invention is to provide a kind of structure that also easily measured current is shared under the state that installs power conversion unit.
In order to solve above-mentioned problem, the invention provides a kind of power conversion unit, it carries out power conversion between AC and DC, described power conversion unit is characterised in that, be connected in series the first semiconductor circuit that the first side of the positive electrode switch element and the first negative side switch element form, with be connected in series the second semiconductor circuit that the second side of the positive electrode switch element and the second negative side switch element form and be connected in parallel, be responsible for thus the phase power conversion exchanging, the first semiconductor circuit and the second semiconductor circuit are respectively by modularization, there is the first ac terminal as the tie point of the first side of the positive electrode switch element and the first negative side switch element by modular the first semiconductor circuit, there is the second ac terminal as the tie point of the second side of the positive electrode switch element and the second negative side switch element by modular the second semiconductor circuit, connect first of the first ac terminal and load exchange conductor from be connected the second ac terminal and load second exchange conductor and be connected at the 3rd terminal place different with the second ac terminal with the first ac terminal.
(invention effect)
By adopting said structure, can under the state that installs power conversion unit, easily observe the situations such as current unevenness.
Brief description of the drawings
Fig. 1 represented to be connected in parallel structure of multiple semiconductor modules.
Fig. 2 represents the example of the power conversion unit being made up of two groups of ac-dc conversion circuits.
Fig. 3 (a) represent to be connected in parallel front of structure of semiconductor module.
End view when Fig. 3 (b) is illustrated in, on two faces, semiconductor module is installed.
Fig. 4 is illustrated in the example that the power conversion unit being made up of two groups of ac-dc conversion circuits has been installed in housing.
Fig. 5 represents the U structure of common terminal for connecting TBU3 mutually as common terminal for connecting TB.
Fig. 6 represents the example of the electric current measuring.
Symbol description:
1A, 1B: ac-dc conversion circuit
S, SBU, SBV, SBW, SBR, SBS, SBT: thyristor
C: smmothing capacitor
R, S, T: the phase of three-phase alternating current
U, V, W: the phase of three-phase alternating current
M, MBU, MBV, MBW, MAR, MAS, MAT: the semiconductor element module of arm
DC: DC circuit
DC+: side of the positive electrode
DC-: negative side
MBUa, MBUb: the semiconductor element module of the arm being connected in parallel
TBUa1, TBUa2, TBUb1, TBUb2: DC terminal
TBUa3, TBUb3: ac terminal
13: cooling block
12: cooler
TBU3: common terminal for connecting
LBUa, LBUb: wiring
Embodiment
Below, with reference to the accompanying drawings of embodiments of the present invention.
In following embodiment, illustrate switch module respectively built-in 2 as the IGBT of thyristor the situation with the recirculation diode being connected with IGBT reverse parallel connection, but also can adopt IGBT other switch element in addition.
Fig. 2 represents the example of the power conversion unit being made up of two groups of ac-dc conversion circuits.In Fig. 2, two groups of ac- dc conversion circuit 1A, 1B are the three-phase translation circuits that adopted thyristor S (for example IGBT), for example, be direct current by the side in ac- dc conversion circuit 1A, 1B (1A) by exchange conversion, and via DC circuit, for example, be interchange by the opposing party in ac- dc conversion circuit 1A, 1B (1B) by DC converting.
Specifically, in the ac-dc conversion circuit 1B that carries out invertor operation, using smmothing capacitor C as DC power supply, according to the triggering signal of the control device from not shown, make each switch element SBU, SBV, SBW disconnect (OFF)/conducting (ON), the electric power of expecting to load-side (U, V, W phase side) supply thus.In the ac-dc conversion circuit 1A that carries out converter operation, according to the triggering signal of the control device from not shown, make each switch element SBR, SBS, SBT disconnection/conducting, thus AC power (R, S, T phase side) is transformed to direct current so that smmothing capacitor C is charged.
In not shown control device, detect electric current, the voltage of DC circuit part and the speed of motor etc. that flow into and flow out power conversion unit, power conversion unit is controlled.In addition, in figure, omit the diagram for the gate circuit of driving switch element, and omitted the diagram of the buffer circuit for withstand voltage protection connecting as required.
The present invention not only can be applied in the power conversion unit 1 with two groups of ac- dc conversion circuit 1A, 1B, but also can be applied in the power conversion unit being made up of the one group of ac-dc conversion circuit (1A or 1B) converting between AC and DC.
In Fig. 2, ac-dc conversion circuit 1A is connected with the alternating current circuit representing mutually with R, S, T, and ac-dc conversion circuit 1B is connected with the alternating current circuit representing mutually with U, V, W.In addition, thyristor S in ac- dc conversion circuit 1A, 1B adopts three phase cell Ritz wiring (Graetz connection) modes, and symbol A, the B on thyristor S represents that it is the element that is positioned at ac- dc conversion circuit 1A and 1B side.Symbol R, S, T and U, V, W represent each phase of three-phase alternating current.In addition, distinguish the element (1) of the positive side in arm configuration and the element (2) of minus side by the symbol 1,2 on thyristor S.
In addition, symbol M represents the semiconductor element module of arm, add to symbol A, the B of M and symbol R, S, T, U, V, W described above, for distinguishing ac- dc conversion circuit 1A and 1B and representing each phase of three-phase alternating current.
Can know from the implication of above-mentioned symbol, for example MAR represents the semiconductor element module of the arm being connected with the R of ac-dc conversion circuit 1A, and MBU represents the semiconductor element module of the arm being connected with the U of ac-dc conversion circuit 1B.Because also can adopting identical method, the semiconductor element module of other arm understands, so the explanation of omitting the semiconductor element module of each arm at this.
In addition, be connected in series as for example MAR of the semiconductor element module of arm and 2 thyristor SAR1 and SAR2, the side of the positive electrode terminal of the negative side terminal of side of the positive electrode switch element SAR1 and negative side switch element SAR2, ac terminal is connected by the conductor of inside modules.In addition 2 the thyristor SAR1 and the two ends of SAR2 and the side of the positive electrode DC+ of DC circuit DC and negative side DC-that are connected in series, are connected.And DC circuit DC is provided with smmothing capacitor C between both positive and negative polarity.
Fig. 1 represents the semiconductor module of an arm in Fig. 2 multiple structure that has further been connected in parallel.At this, as the semiconductor module of arm, show the example of MBU.In the semiconductor element module MBU of the arm being connected with the U of ac-dc conversion circuit 1B, MBUa and MBUb are connected in parallel.
As shown in Figure 1, side of the positive electrode switch element SBU11 and negative side switch element SBU21 are made up of a module MBUa.Equally, side of the positive electrode switch element SBU12 and negative side switch element SBU22 are also made up of a module MBUb.In addition, side of the positive electrode switch element SBU11 and SBU12 are connected in parallel, and negative side switch element SBU21 and SBU22 are connected in parallel.In addition, the conductor of side of the positive electrode and the conductor of negative side adopt and make the inductance of the switch module being connected in parallel become uniform mode to install.
Be connected at terminal TBU3 place as the ac terminal TBUa3 of the tie point of side of the positive electrode switch element SBU11 and negative side switch element SBU21 with as the ac terminal TBUb3 of the tie point of side of the positive electrode switch element SBU12 and negative side switch element SBU22, formed the structure of 2 input and output arranged side by side that are coupled.
In addition, be arranged on the rear class after coupling for the current detector 11 of the control of power conversion unit 1.Although not detailed icon, other two phases also adopt identical structure.
Below, further the outside annexation of 2 modules is elaborated.The semiconductor element module MBUa of arm has respectively the DC terminal (TBUa1 for being connected with direct current trackside with MBUb, TBUa2, TBUb1, TBUb2) with ac terminal (TBUa3 and TBUb3) for being connected with alternating current trackside (U phase).DC terminal (TBUa1 and TBUb1) is connected with the anodal DC+ of DC circuit, and DC terminal (TBUa2 and TBUb2) is connected with the negative pole DC-of DC circuit.
In the present invention, the ac terminal (TBUa3 and TBUb3) that will be used for being connected with alternating current trackside (U phase) connects jointly, and common terminal for connecting TBU3 is configured in from ac terminal (TBUa3 and the TBUb3) position far away via wiring LBUa, LBUb.In addition, shown in diagram, the common terminal for connecting TBU3 of U phase is configured in same position after collecting with the common terminal for connecting of other phase as described later.
Fig. 3 (a) represent to be connected in parallel vertical view of the structure that the semiconductor module of arm forms.On vertical view, show the equipment configuration of U phase.In Fig. 3 (a), 13 represent cooling block, be equipped with semiconductor module MBUa and the MBUb of arm, and cooling block 13 are for dispelling the heat on cooling block 13 to the heat being produced by semiconductor module.In addition, thus semiconductor module produce heat be delivered to cooler 12 to external cooling from cooling block 13.
In Fig. 3 (a), on the cooling block 13 of cooler 12, be equipped with 4 switch element SBU11, SBU12 in Fig. 1, SBU21, SBU22, namely 2 module MBUa and MBUb.Illustrate the cooler of heat pipe-type at this, but also can adopt fin (heat sink).
Below preferably considering aspect installation some.First,, in order to suppress the switch module leaping voltage in when action, be necessary to reduce the inductance of the cycling circuit being formed by module and smmothing capacitor C.For this reason, in the time that the parts of 2 module MBUa and MBUb are installed, the DC terminal of 2 modules are arranged on to center side, and ac terminal TBUa3 and TBUb3 are installed toward the outer side, especially in the time that the DC terminal of 2 modules is installed, be mounted to positive terminal and negative terminal is opposite.In the example of Fig. 3 (a), positive terminal TBUa1 and negative terminal TBUb2 are configured on opposed position, and positive terminal TBUb1 and negative terminal TBUa2 are configured on opposed position.
In addition, the installation site of smmothing capacitor C is not shown, and it adopts the inductance making between switch module to become impartial mode and installs.In addition in figure, omitted, the diagram of conductor wiring.
The semiconductor module MBUa of arm and MBUb have respectively DC terminal (TBUa1, TBUa2, TBUb1, TBUb2) and ac terminal (TBUa3 and TBUb3).Between ac terminal TBUa3 and common terminal for connecting TBU3, is connected by wiring LBUa, ac terminal TBUb3 with jointly between terminal for connecting TBU3, be connected by the LBUb that connects up.As mentioned above, 2 wirings LBUa, LBUb are directed into the common terminal for connecting TBU3 of U phase and are connected, and export to outside as U phase terminal.In addition, although not shown, DC terminal TBUa1 and TBUb1 are connected in the positive pole of DC circuit DC jointly, and DC terminal TBUa2 and TBUb2 are connected in the negative pole of DC circuit DC jointly.
Fig. 3 (a) represent to be connected in parallel front of the structure that the semiconductor module of arm forms.By adopting overleaf identical configuration structure, can improve packing density.End view when Fig. 3 (b) is illustrated in two faces and installs.The back side in the time that two faces are installed can be other phase in identical ac-dc conversion circuit mutually, and if adopt the power conversion unit being formed by two groups of ac-dc conversion circuits shown in Fig. 2, the phase in other ac-dc conversion circuit is preferably set overleaf.
Fig. 3 (b) shows the R phase that forms overleaf in other ac-dc conversion circuit 1A, the i.e. example of the semiconductor module MAR of arm.In addition, in the power conversion unit being formed by two groups of ac- dc conversion circuit 1A, 1B 1 shown in Fig. 2, make the effect of a side ac-dc conversion circuit performance converter, and make the effect of the opposing party's ac-dc conversion circuit performance inverter, therefore the structure of Fig. 3 should be called converter/inverter one facies unit.In addition, overleaf, the semiconductor module MAR of arm is made up of MARa and MARb, and 2 wirings LARa, LARb from then on stretching out are imported into the common terminal for connecting TBR3 of R phase and are connected, and export to outside as R phase terminal.In addition together with the common terminal for connecting TBU3 of U phase and the common terminal for connecting TBR3 of R phase, be configured on common terminal board TUR3.
Fig. 4 illustrates the power conversion unit being made up of two groups of ac-dc conversion circuits of Fig. 2 is accommodated in to the figure of housing 10 when interior, is illustrated in the configuration relation of appreciable parts under the state that the door before housing opens.In a facies unit Y (YUR, YVS, YWT) of 3 groups of converter/inverters, the position relationship of short transverse is that cooler 12 is configured in upside, cooling block 13 is configured in downside, configures in the horizontal 3 groups.Terminal board T is configured in the face in front of the door of housing 10.Terminal board T is made up of 3 terminal board TUR, TVS, TWT of configured in series.
Wherein, be provided with the common terminal for connecting TBU3 of U phase and the common terminal for connecting TBR3 of R phase at terminal board TUR, similarly, be provided with the common terminal for connecting TBV3 of V phase and the common terminal for connecting TBS3 of S phase at terminal board TVS, be provided with the common terminal for connecting TBW3 of W phase and the common terminal for connecting TBT3 of T phase at terminal board TWT.Thereby being fed to each common terminal for connecting from the wiring of the semiconductor module of the arm being connected in parallel is joined together.
Fig. 5 represents the structure as the common terminal for connecting TBU3 of the U phase of common terminal for connecting TB.Be connected at common terminal for connecting TBU3 place and form U phase from wiring LBUa, the LBUb of semiconductor module MBUa, the MBUb of multiple arms of same phase.
In housing 10, except foregoing circuit member, be also accommodated with the smmothing capacitor C of DC circuit or for wiring of various connecting lines etc.Therefore, shell intracorporeal space is narrow, in general, is difficult to the electric current between the semiconductor module of multiple arms to share and surveying under the state that installs power conversion unit.
On the other hand, in the present invention, can be arranged at the part of common terminal for connecting of housing 10 terminal board T above, the electric current of the semiconductor module to multiple arms is surveyed.For example, on the common terminal for connecting TBU3 of the U phase shown in Fig. 5, prepared the terminal that is connected with two groups of semiconductor modules, so can measure each electric current in this part.
While adopting the component configuration shown in Fig. 3 and Fig. 4, in switch module MAR, the MAS of each phase of Fig. 1, MAT, MBU, MBV, MBW, ac terminal is configured in outside, so as shown in Figure 1, structurally can the prime of coupling terminal TBU3 by general current detector observation flow through the first semiconductor module ac terminal TBUa3 electric current and through the ac terminal TBUb3 of the second semiconductor module and mobile electric current, observe the inhomogeneities of electric current under thus can the state after installation.
Fig. 6 represents the waveform example measuring by the present invention.Fig. 6 shows the each several part electric current of the U phase corresponding with Fig. 1, iu represents the U phase current being detected by current detector 11, iua represents the electric current of the module MBUa side of the U phase current being detected by current detector 11a, and iub represents the electric current of the module MBUb side of the U phase current being detected by current detector 11b.
Be below the power conversion unit of the present invention that has represented above detailed description with the U phase structure of Fig. 1, it has:
Be connected in series by the first side of the positive electrode switch element SBU11 and the first negative side switch element SBU21 the first semiconductor circuit MBUa forming; And
Be connected in series by the second side of the positive electrode switch element SBU12 and the second negative side switch element SBU22 the second semiconductor circuit MBUb forming; And
Have: as the first ac terminal TBUa3 of the tie point of the first side of the positive electrode switch element SBU11 and the first negative side switch element SBU21; And
As the second ac terminal TBUb3 of the tie point of the second side of the positive electrode switch element SBU21 and the second negative side switch element SBU22,
Connect first of the first ac terminal TBUa3 and load exchange conductor LBUa be connected the second ac terminal TBUb3 and load second exchange conductor LBUb and be connected at the 3rd ac terminal TBU3 place different with the second ac terminal from the first ac terminal.
Claims (7)
1. a power conversion unit, it carries out power conversion between AC and DC, and this power conversion unit is characterised in that,
Be connected in series the first semiconductor circuit that the first side of the positive electrode switch element and the first negative side switch element form and be connected in series the second side of the positive electrode switch element and the second semiconductor circuit that the second negative side switch element forms is connected in parallel, be responsible for thus a phase power conversion of described interchange, described the first semiconductor circuit and described the second semiconductor circuit are respectively by modularization
There is the first ac terminal as the tie point of described the first side of the positive electrode switch element and described the first negative side switch element by modular described the first semiconductor circuit,
There is the second ac terminal as the tie point of described the second side of the positive electrode switch element and described the second negative side switch element by modular described the second semiconductor circuit,
Connect first of described the first ac terminal and load exchange conductor from be connected described the second ac terminal and load second exchange conductor and be connected at the 3rd ac terminal place different with the second ac terminal with described the first ac terminal.
2. power conversion unit as claimed in claim 1, is characterized in that,
Be configured on the front of cooling block by modular described the first semiconductor circuit and described the second semiconductor circuit, form being configured on the back side of cooling block by modular described the first semiconductor circuit and described the second semiconductor circuit of other phase of described interchange.
3. power conversion unit as claimed in claim 2, is characterized in that,
Described power conversion unit by the first ac-dc conversion circuit that is direct current by the first exchange conversion be that the second the second ac-dc conversion circuit exchanging forms by described DC converting,
On the front of described cooling block, configure described the first ac-dc conversion circuit by modular described the first semiconductor circuit and described the second semiconductor circuit, on the back side of described cooling block, configure described the second ac-dc conversion circuit by modular described the first semiconductor circuit and described the second semiconductor circuit, form thus a facies unit of converter/inverter.
4. the power conversion unit as described in any one of claims 1 to 3, is characterized in that,
Form each member storage of power conversion unit in housing, described the 3rd terminal arrangement is positioned on positive position in the time of the opening of housing.
5. power conversion unit as claimed in claim 3, is characterized in that,
Described the first interchange is three-phase alternating current with at least one party during described second exchanges,
Form each member storage of power conversion unit in housing, described in 3 groups a facies unit of converter/inverter by and row arrangement and being accommodated in housing.
6. power conversion unit as claimed in claim 5, is characterized in that,
Form each member storage of power conversion unit in housing, with a facies unit of described 3 groups of converter/inverters respectively corresponding multiple described the 3rd terminal arrangement be positioned on positive position when the opening of housing.
7. the power conversion unit as described in any one of claim 1 to 6, is characterized in that,
Observe the electric current of described the first interchange conductor of flowing through, described the second interchange electric current of conductor and the resultant current of the 3rd terminal of flowing through of flowing through in the 3rd terminal part.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-255004 | 2012-11-21 | ||
| JP2012255004A JP5950800B2 (en) | 2012-11-21 | 2012-11-21 | Power converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103840677A true CN103840677A (en) | 2014-06-04 |
| CN103840677B CN103840677B (en) | 2017-06-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310581018.0A Active CN103840677B (en) | 2012-11-21 | 2013-11-18 | Power conversion unit |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5950800B2 (en) |
| CN (1) | CN103840677B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1120737A (en) * | 1994-06-17 | 1996-04-17 | Abb管理有限公司 | Semiconductor module with low inductance power |
| CN202406038U (en) * | 2011-12-02 | 2012-08-29 | 江苏大全凯帆电器股份有限公司 | IGBT (insulated gate bipolar transistor) module with double-transistor parallel connection unit of wind power converter |
| US20120262141A1 (en) * | 2008-07-18 | 2012-10-18 | Heineman Douglas E | Active Droop Current Sharing |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0578196U (en) * | 1992-03-18 | 1993-10-22 | 株式会社東芝 | Power conversion unit |
| JP2002010653A (en) * | 2000-06-21 | 2002-01-11 | Nippon Densan Corp | Motor-driving circuit |
| JP5289536B2 (en) * | 2011-11-04 | 2013-09-11 | 三菱電機株式会社 | Power semiconductor module |
-
2012
- 2012-11-21 JP JP2012255004A patent/JP5950800B2/en active Active
-
2013
- 2013-11-18 CN CN201310581018.0A patent/CN103840677B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1120737A (en) * | 1994-06-17 | 1996-04-17 | Abb管理有限公司 | Semiconductor module with low inductance power |
| US20120262141A1 (en) * | 2008-07-18 | 2012-10-18 | Heineman Douglas E | Active Droop Current Sharing |
| CN202406038U (en) * | 2011-12-02 | 2012-08-29 | 江苏大全凯帆电器股份有限公司 | IGBT (insulated gate bipolar transistor) module with double-transistor parallel connection unit of wind power converter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014103803A (en) | 2014-06-05 |
| CN103840677B (en) | 2017-06-20 |
| JP5950800B2 (en) | 2016-07-13 |
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