CN103840066B - A method of making a device led by adjusting the concentration of the phosphor - Google Patents

A method of making a device led by adjusting the concentration of the phosphor Download PDF

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CN103840066B
CN103840066B CN 201310742515 CN201310742515A CN103840066B CN 103840066 B CN103840066 B CN 103840066B CN 201310742515 CN201310742515 CN 201310742515 CN 201310742515 A CN201310742515 A CN 201310742515A CN 103840066 B CN103840066 B CN 103840066B
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phosphor
led
light emitting
color
concentration
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CN 201310742515
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CN103840066A (en )
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熊毅
焦祺
李坤锥
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广州市鸿利光电股份有限公司
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Abstract

本发明公开了一种通过调节荧光粉浓度制作LED器件的方法,根据芯片发光坐标值和LED器件发光的目标色坐标值选择在CIE中向上偏离芯片发光坐标值和LED器件发光的色坐标值所在直线且最接近该直线的坐标值对应的单一荧光粉,增大该单一荧光粉的浓度,LED器件发光的色坐标朝长波方向偏离芯片发光坐标值与荧光粉坐标值所在的直线,直到LED器件发光的色坐标达到LED器件发光的目标色坐标值为止。 The present invention discloses a method of fabrication of the LED device by adjusting the concentration of the phosphor, the light emitting chip according to the coordinate values ​​and the LED device emitting the target color coordinate value selected deviate upward in the CIE coordinate value of the light emitting chip and the LED device where the luminescent color coordinate values a single straight line and is closest to coordinate values ​​corresponding to the phosphor of the straight line, increasing the concentration of the single phosphor, color coordinates of the LED device emitting a longer wavelength deviates from the straight line toward the light emitting chip and the coordinate values ​​where the value of the coordinates of the phosphor, until the LED devices LED light emission device emits light reaches the color coordinates of the target color coordinate value. 利用本发明的方法,不仅能调节到LED器件发光的目标色坐标,而且色纯度高。 Using the method of the invention, not only the light emitting device can be adjusted to the LED color coordinates of the target, and high color purity.

Description

一种通过调节荧光粉浓度制作LED器件的方法 A method of fabricating an LED device by adjusting the concentration of the phosphor

技术领域 FIELD

[0001]本发明涉及LED器件的制作方法。 [0001] The present invention relates to a method for fabricating LED devices.

背景技术 Background technique

[0002] LED器件发光的颜色丰富多样,当前LED器件实现不同颜色的发光主要是采用不同芯片的组合或芯片与荧光粉的组合方法。 [0002] The color of the light emitting device LED variety, this LED light emitting device to achieve different color combinations or mainly used methods chip and phosphor different chips. 现在,采用蓝光芯片激发不同颜色的荧光粉来得到不同颜色的光是最为常见的方法。 Now, using different colors of blue chip to stimulate phosphor to get just the most common methods of different colors. 目前,在芯片颜色坐标已定的情况下,要得到某一特定要求的发光颜色坐标,一般采用如下两种方法: Currently, in the chip has a predetermined color coordinates, the color coordinate to obtain a specific emission requirements, the following two general methods:

[0003] (I)选择能实现该特定发光颜色坐标的单粉进行,但要求该单粉的颜色坐标与芯片的颜色坐标的连线必须通过发光颜色坐标,虽然该种方法能得到色纯度较高的发光颜色,但目前的荧光粉种类有限,要找到该符合要求的单粉非常的困难,对于大部分的发光颜色要求,一般难以实现。 [0003] (I) selected to achieve the particular emission color coordinates for a single powder, but requires a color coordinate and color coordinates of the single-chip connection must powder emission color coordinate, the method can be obtained although the color purity than high light color, but the type of phosphor is limited, very difficult to find a single meal that meets the requirements for most of luminous color requirements, are generally difficult to achieve.

[0004] (2)通过不同荧光粉的组合来实现,要求所选的不同颜色的荧光粉颜色坐标与芯片颜色坐标所围成的色域包含发光颜色坐标,这种方法操作难度大,效率低,而且对于色纯度要求高的颜色坐标,很难甚至不可能通过不同颜色荧光粉的组合来实现。 [0004] (2) by a combination of different phosphor, requires a different phosphor colors selected color coordinate and color coordinates of the chip surrounded by the luminescent color gamut comprising coordinates, this method is difficult to operate a large, inefficient and high color purity for color coordinate requirements, difficult or even impossible to achieve by combinations of different phosphor colors.

发明内容 SUMMARY

[0005]基于上述技术问题,本发明提供了一种通过调节荧光粉浓度来制作LED器件的方法。 [0005] Based on the above technical problem, the present invention provides a method for fabricating LED devices by adjusting the concentration of the phosphor.

[0006]为了解决上述技术问题,本发明的技术方案是:一种通过调节荧光粉浓度制作LED器件的方法是:根据芯片发光坐标值和LED器件发光的目标色坐标值选择在CIE中向上偏离芯片发光坐标值和LED器件发光的色坐标值所在直线且最接近该直线的坐标值对应的单一荧光粉,增大该单一荧光粉的浓度,LED器件发光的色坐标朝长波方向偏离芯片发光坐标值与荧光粉坐标值所在的直线,直到LED器件发光的色坐标达到LED器件发光的目标色坐标值为止。 [0006] To solve the above technical problem, the technical solution of the present invention is: a method of making an LED device by adjusting the concentration of the phosphor is: a light emitting chip according to the coordinate values ​​and the LED device to select a target color coordinate values ​​in the CIE upwardly offset coordinate values ​​and the LED chip light emitting device where the color coordinate values ​​closest to a single straight line and the coordinate values ​​corresponding to the phosphor of the straight line, increasing the concentration of the single phosphor, color coordinates of the light emitting device LED toward a longer wavelength light emitting chip offset from the coordinates linear coordinate values ​​where the value of the phosphor, the light emitting device until the LED color coordinates of the light emitting device LED reaches a target color coordinate value.

[0007]本发明的机理是:根据荧光粉的激发和发色图谱发现,同一种荧光粉的激发光谱和发射光谱存在一定程度的重合,不同种类荧光粉的激发光谱和发射光谱同样也会存在部分重叠的现象,这一1性质就会导致焚光粉发光时,焚光粉本身会存在自吸收的现象,这种自吸收会导致荧光粉发光向长波方向偏移,这种发射波长的偏移与荧光粉的浓度有关,当荧光粉浓度很低时,自吸收可以忽略不计,只有当荧光粉的浓度逐渐增大时,自吸收才能观察至IJ。 [0007] The mechanism of the present invention is: The hair color phosphor excitation spectrum, and found that there is a degree of overlap of the same phosphors excitation and emission spectra, excitation spectra of different types of phosphors and emission spectra will also present partially overlapping phenomena, the properties will result in a powder emitting light when burned, the burning of the presence of light powder itself self-absorption phenomenon, which leads to self-absorption shifted to a longer wavelength light-emitting phosphors, such partial emission wavelength shift the concentration of phosphor, and when the low phosphor concentration, self-absorption is negligible, only when the concentration of phosphor increases gradually, self-absorption can be observed to IJ. 而在芯片光源激发荧光粉发光的过程中,光穿过荧光粉层时会发生光的吸收、散射和反射现象,在这种情况下,波长越长的光穿透能力越强,被散射的概率越低,相反,波长越短的光穿透力越弱,被散射的概率越高,当荧光粉浓度逐渐增大时,光穿越荧光粉层时,散射和反射对光的传播影响最大,波长较短的光散射的概率高,这使得短波光在荧光粉层所走的光程臂长波光长,短波长光被吸收损失的概率比长波大,使得LED器件发射波长也会往长波方向偏移。 In the process of phosphors excited light emitting chip, the absorption, scattering and reflection phenomena of light occurs when light passes through the phosphor layer, in which case, the longer the wavelength of light penetration stronger, scattered the lower the probability, the contrary, the weaker the shorter wavelength of the light penetration, the higher the probability of being scattered, when the concentration of phosphor increases gradually, the light through the phosphor layer, the propagation of light scatter and reflect the greatest impact, high probability of short-wavelength light scattering, which makes the short wave length light in the phosphor layer are moving in the optical path length of the arm, the probability of short wavelength light is larger than the long-wave absorption loss, so that the emission wavelength of the LED device to longer wavelength will offset.

[0008]本发明的有益效果是:根据上述机理,当选择一单一的与LED器件发光的目标色坐标值最为接近的且向上偏离的坐标值对应的荧光粉,当增大荧光粉的浓度,则LED器件发光色坐标会向长波方向偏离,因此,不仅能得到LED器件发光的目标色坐标值,而且色纯度高。 [0008] Advantageous effects of the present invention are: According to the above mechanism, when a coordinate value corresponding to a single light emitting phosphors selected LED device and the target color coordinate values ​​closest to and offset upward, when the concentration of phosphor increases, chromaticity coordinates of the LED light-emitting device will be shifted to the long wavelength side, and therefore, not only to obtain an LED device emitting the target color coordinate value, and a high color purity.

附图说明 BRIEF DESCRIPTION

[0009]图1为实施例1对应的产品打靶图。 [0009] Example 1 FIG. 1 is a product corresponding to FIG targeting embodiment.

[0010]图2为不同浓度黄色荧光粉坐标打靶曲线。 [0010] FIG. 2 is a concentration of the yellow phosphor coordinates targeting different curve.

[0011 ]图3为不同浓度橙色荧光粉打靶图。 [0011] FIG. 3 is a targeting different concentrations orange phosphors FIG.

[0012]图4为铝酸盐YAG荧光粉激发与发射图谱。 [0012] FIG. 4 is a YAG aluminate phosphors excitation and emission spectra.

[0013]图5为氮化物荧光粉激发与发射图谱。 [0013] FIG. 5 is a nitride phosphor excitation and emission spectra.

具体实施方式 detailed description

[0014]下面结合附图和具体实施方式对本发明进行进一步详细说明。 [0014] The present invention will be further described in detail in conjunction with accompanying drawings and specific embodiments.

[0015]通过调节荧光粉浓度制作LED器件的方法是:根据芯片发光坐标值和LED器件发光的目标色坐标值选择在CIE中向上偏离芯片发光坐标值和LED器件发光的色坐标值所在直线且最接近该直线的坐标值对应的单一荧光粉,增大该单一荧光粉的浓度,LED器件发光的色坐标朝长波方向偏离芯片发光坐标值与焚光粉坐标值所在的直线,直到LED器件发光的色坐标达到LED器件发光的目标色坐标值为止。 [0015] The method of fabrication of the LED device by adjusting the concentration of the phosphor is: a light emitting chip according to the coordinate values ​​and the LED device to select a target color coordinate values ​​deviate upward in the CIE coordinate value of the LED chip light emitting device where a straight line and color coordinate values phosphor single coordinate values ​​closest to the straight line corresponding to the increased concentration of the single phosphor, color coordinates of the LED device emitting a longer wavelength deviates from the straight line toward the light emitting chip and the coordinate values ​​where the value of the coordinates of burning powder light emitting device until the LED LED color coordinates to reach target color coordinates of the light emitting device value.

[0016] 实施例1。 [0016] Example 1.

[0017]如图1所示,芯片的发光坐标值为(0.151,0.03),要求LED器件发光的目标色坐标是(0.575,0.416),这一LED器件发光的目标色坐标非常的特殊,利用常规的方法和现有的荧光粉,无论是单一荧光粉还是组合荧光粉都难以实现,目前能够提供的且与LED器件发光的目标色坐标值接近的荧光粉是坐标值为(0.55,0.44)和(0.582,0.417 ),根据本发明的技术方案,选择坐标值为(0.55,0.44)的橙色荧光粉,并增大荧光粉的浓度到三倍,发现LED器件发光的色坐标已经偏离了芯片和荧光粉坐标值所在的直线,其坐标打靶图以(0.575, [0017] As shown, the light emitting chip coordinate value (0.151,0.03) 1, the LED device emitting the required target color coordinates (0.575,0.416), the LED device emitting the target color coordinates of very special use conventional methods and existing phosphors, whether single phosphor or phosphor combination are difficult to achieve, and is now able to provide a light emitting device LED and a target color coordinate value is a coordinate value closest phosphor (0.55,0.44) and (0.582,0.417), according to the aspect of the present invention, the orange phosphor selected coordinate value (0.55,0.44), and to increase to three times the concentration of the phosphor, the light emitting device discovery LED color coordinates have deviated from the chip coordinate values ​​and the linear phosphors where, in FIG targeting coordinates (0.575,

0.416)为中心贴着CIE色坐标变线,LED器件发光的目标色坐标符合要求。 0.416) as a center line becomes close to the CIE color coordinates, LED light emission device meets the requirements of the target color coordinates. 因此,利用本发明的方法,不仅能使LED器件发光的目标色坐标达到要求,而且其色纯度高。 Thus, using the method of the present invention, the light emitting devices not only make the LED color coordinates to meet the requirements of the target, and its high color purity.

[0018] 实施例2。 [0018] Example 2.

[0019] 如图2所示,芯片发光坐标值为(0.151,0.03),荧光粉的坐标值为(0.444,0.537),如图2所示,当荧光粉的浓度较低时,增大荧光粉的浓度,LED器件的色坐标值沿着芯片和荧光粉坐标值所在直线逐渐靠近荧光粉坐标点,当继续增大荧光粉的浓度时,LED器件的色坐标值朝长波方向偏离芯片和荧光粉坐标值所在的直线,直到贴着CIE色坐标边线并继续随着荧光粉浓度增加逐渐红移。 [0019] As shown, the light emitting chip coordinate value (0.151,0.03) 2, phosphor coordinate values ​​(0.444,0.537), shown in Figure 2, when a lower concentration of the phosphor, the phosphor is increased concentration of the powder, the color coordinate value of the LED device along a straight line where the coordinate value of the chip and phosphor gradually approach phosphor coordinate point, continue to increase when the concentration of phosphor, color coordinate value and chip offset from the LED device toward the longer wavelength fluorescence powder linear coordinate values ​​in until edge against CIE chromaticity coordinates of phosphors and continues to increase as the concentration of red-shifted. 同理,如图3所示,当荧光粉坐标值为(0.582,0.417)时也同样发现偏移现象。 Similarly, as shown in FIG 3, when the phosphor coordinate value (0.582,0.417) offset phenomenon is also found.

[0020]通过实施例1和实施例2说明:当选择一单一的与LED器件发光的目标色坐标值最为接近的且向上偏离的坐标值对应的荧光粉,当增大荧光粉的浓度,则LED器件发光色坐标会向长波方向偏离,因此,不仅能得到LED器件发光的目标色坐标值,而且色纯度高。 [0020] Example 1 through Example 2 illustrates and embodiment: when selected with a single LED light emitting device closest target color coordinate value and the coordinate value corresponding to deviate upward phosphor, when the concentration of phosphor increases, the LED color coordinates of the light emitting device will be shifted to the long wavelength side, and therefore, not only to obtain an LED device emitting the target color coordinate value, and a high color purity.

[0021]这与如下的机理向一致:如图4和图5所示,根据荧光粉的激发和发色图谱发现,同一种荧光粉的激发光谱和发射光谱存在一定程度的重合,不同种类荧光粉的激发光谱和发射光谱同样也会存在部分重叠的现象,这一性质就会导致荧光粉发光时,荧光粉本身会存在自吸收的现象,这种自吸收会导致荧光粉发光向长波方向偏移,这种发射波长的偏移与荧光粉的浓度有关,当荧光粉浓度很低时,自吸收可以忽略不计,只有当荧光粉的浓度逐渐增大时,自吸收才能观察到。 [0021] This is consistent with the following mechanism: FIGS. 4 and 5, according to the hair color phosphor excitation spectrum and found that there is a degree of overlap of the same phosphors excitation and emission spectra of different fluorescent species powder excitation spectrum and an emission spectrum partially overlaps the same phenomenon is also present, this property will result for light-emitting phosphors, the phosphor itself will be absorbed from the presence of the phenomenon, which leads to self-absorption to a longer wavelength light-emitting phosphors partial shift, and this concentration excursion emission wavelength of the phosphor, and when the concentration of the phosphor is low, the self-absorption is negligible, only when the concentration of the phosphor is gradually increased self-absorption can be observed. 而在芯片光源激发荧光粉发光的过程中,光穿过荧光粉层时会发生光的吸收、散射和反射现象,在这种情况下,波长越长的光穿透能力越强,被散射的概率越低,相反,波长越短的光穿透力越弱,被散射的概率越高,当荧光粉浓度逐渐增大时,光穿越荧光粉层时,散射和反射对光的传播影响最大,波长较短的光散射的概率高,这使得短波光在荧光粉层所走的光程臂长波光长,短波长光被吸收损失的概率比长波大,使得LED器件发射波长也会往长波方向偏移。 In the process of phosphors excited light emitting chip, the absorption, scattering and reflection phenomena of light occurs when light passes through the phosphor layer, in which case, the longer the wavelength of light penetration stronger, scattered the lower the probability, the contrary, the weaker the shorter wavelength of the light penetration, the higher the probability of being scattered, when the concentration of phosphor increases gradually, the light through the phosphor layer, the propagation of light scatter and reflect the greatest impact, high probability of short-wavelength light scattering, which makes the short wave length light in the phosphor layer are moving in the optical path length of the arm, the probability of short wavelength light is larger than the long-wave absorption loss, so that the emission wavelength of the LED device to longer wavelength will offset.

[0022]因此,本领域技术人员根据本发明的技术方案和具体实施例可以得知当增大荧光粉的浓度时,可以让LED器件发光的色坐标偏离,从而得到LED器件发光的目标色坐标。 [0022] Thus, those skilled in the art and specific examples may be color coordinates that when increasing the concentration of the phosphor, the light emitting device LED may allow deviation According to the present invention, thereby obtaining an LED device emitting the target color coordinates .

Claims (1)

  1. 1.一种通过调节荧光粉浓度制作LED器件的方法,其特征在于:根据芯片发光坐标值和LED器件发光的目标色坐标值选择在CIE中向上偏离芯片发光坐标值和LED器件发光的色坐标值所在直线且最接近该直线的坐标值对应的单一荧光粉,增大该单一荧光粉的浓度,LED器件发光的色坐标朝长波方向偏离芯片发光坐标值与焚光粉坐标值所在的直线,直到LED器件发光的色坐标达到LED器件发光的目标色坐标值为止。 CLAIMS 1. A method for fabricating an LED device by adjusting the concentration of phosphor, wherein: the light emitting chip according to the coordinate values ​​and the LED device emitting the target color coordinate value selected in the CIE color coordinates are upwardly offset from the coordinate values ​​of chip light emitting devices and LED where the value closest to a single straight line and the coordinate values ​​corresponding to the phosphor of the straight line, increasing the concentration of the single phosphor, LED color coordinates of the light emitting device toward the long wavelength light emitting chips linearly offset from the coordinate values ​​and coordinate values ​​where the burning light pink, until the LED color coordinates of the light emitting device LED device emits light to reach target color coordinate value.
CN 201310742515 2013-12-30 2013-12-30 A method of making a device led by adjusting the concentration of the phosphor CN103840066B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1319899A (en) * 2000-03-27 2001-10-31 通用电气公司 White lumination system with improved color output
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
CN101271939A (en) * 2007-03-23 2008-09-24 光宝科技股份有限公司 Luminous device with open loop control and production method thereof
CN101437922A (en) * 2006-05-19 2009-05-20 三井金属矿业株式会社 White phosphor, and white light-emitting equipment of device
JP2012174968A (en) * 2011-02-23 2012-09-10 Mitsubishi Electric Corp Light-emitting device and light-emitting device group and manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319425B1 (en) * 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
CN1319899A (en) * 2000-03-27 2001-10-31 通用电气公司 White lumination system with improved color output
CN101437922A (en) * 2006-05-19 2009-05-20 三井金属矿业株式会社 White phosphor, and white light-emitting equipment of device
CN101271939A (en) * 2007-03-23 2008-09-24 光宝科技股份有限公司 Luminous device with open loop control and production method thereof
JP2012174968A (en) * 2011-02-23 2012-09-10 Mitsubishi Electric Corp Light-emitting device and light-emitting device group and manufacturing method

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