CN103839773B - 用于湿法刻蚀工艺的酸槽 - Google Patents

用于湿法刻蚀工艺的酸槽 Download PDF

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CN103839773B
CN103839773B CN201410060590.7A CN201410060590A CN103839773B CN 103839773 B CN103839773 B CN 103839773B CN 201410060590 A CN201410060590 A CN 201410060590A CN 103839773 B CN103839773 B CN 103839773B
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semiconductor substrate
acid tank
substrate
wet etching
rotary apparatuss
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CN103839773A (zh
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宋振伟
徐友峰
陈晋
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Shanghai Huali Microelectronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

本发明提供一种用于湿法刻蚀工艺的酸槽，包括用于放置半导体衬底的衬底支架，所述衬底支架包括：支架底座；多个支撑柱，设置于所述支架底座上，所述支撑柱上设置有旋转装置，所述半导体衬底设置于所述旋转装置上，所述半导体衬底能够随着所述旋转装置进行转动。本发明通过在酸槽的衬底支撑架上设置旋转装置，使得半导体衬底能够随着旋转装置进行转动，使得半导体衬底上的图形能够在某段时间内平行于水流方向，更有效的去除位于图形附近的颗粒缺陷，提高了湿法刻蚀的清洗效果和最终形成的半导体衬底的良率。

Description

用于湿法刻蚀工艺的酸槽
技术领域
本发明涉及半导体技术领域，特别涉及一种用于湿法刻蚀工艺的酸槽。
背景技术
在半导体制造工艺中，为了将晶圆上的掩膜上的图形转移到下埋层上，需要对进行刻蚀工艺。下埋层的某些部分经过与刻蚀机发生化学反应被去除，而其余部分由于掩膜层的保护没有接触刻蚀剂从而得以保留。目前，最主要的刻蚀方法有两种：湿法刻蚀和干法等离子刻蚀。在湿法刻蚀中，刻蚀剂是液态化学混合物，它与晶圆衬底发生化学反应，产生可溶性物质，从而溶解于溶液中。酸槽作为湿法刻蚀工艺的主要设备，通常晶圆放置于酸槽中，利用酸槽的刻蚀级中浸没一段特定的时间，便可刻蚀晶圆上不需要的材料层。
随着半导体期间的关键尺寸节点从90nm持续缩减到45nm，甚至到32nm以下，对酸槽来说，去缺陷能力尤其对去颗粒缺陷的能力越来越是一个大的挑战。
现有的酸槽为了提高清洗能力，增加了兆声清洗，利用兆声在酸槽里产生气泡增加清洗效果。另外也有直接往酸槽里吹入N2，通过N2气泡在芯片表面破裂时产生的水流力来增加清洗效果等等。但是，由于半导体衬底上的图形的某些特殊位置（比如PolyLine附近）的颗粒缺陷，采用现有技术却难以去除。这些位置的颗粒缺陷会影响最终制作的半导体器件的电学性能测试和良率。如何在不损伤半导体衬底以及半导体衬底上的图形的基础上，将半导体衬底和半导体衬底上的颗粒缺陷去除，成为本领域亟待解决的技术问题之一。
发明内容
本发明解决的问题是提供一种酸槽，能够在不损伤半导体衬底和半导体衬底上形成的图形的基础上，去除颗粒缺陷。
为解决上述问题，本发明提供一种用于湿法刻蚀工艺的酸槽，包括用于放置半导体衬底的衬底支架，所述衬底支架包括：支架底座；多个支撑柱，设置于所述支架底座上，所述支撑柱上设置有旋转装置，所述半导体衬底设置于所述旋转装置上，所述半导体衬底能够随着所述旋转装置进行转动。
可选地，所述旋转装置为滚轮，所述滚轮内设置有卡槽，所述半导体衬底设置于所述卡槽内。
可选地，所述支撑柱的数目3个。
与现有技术相比，本发明具有以下优点：
本发明通过在酸槽的衬底支撑架上设置旋转装置，使得半导体衬底能够随着旋转装置进行转动，使得半导体衬底上的图形能够在某段时间内平行于水流方向，更有效的去除位于图形附近的颗粒缺陷，提高了湿法刻蚀的清洗效果和最终形成的半导体衬底的良率。
附图说明
图1是现有技术的酸槽的衬底支架结构示意图；
图2是现有技术的半导体衬底在酸槽中清洗的原理示意图。
图3是本发明一个实施例的酸槽的衬底支架结构示意图。
具体实施方式
现有的酸槽无法将半导体衬底上的图形的某些特殊位置（比如PolyLine附近）的颗粒缺陷去除。请结合图1所示的现有技术的酸槽的衬底支架结构示意图。所述酸槽内设置有衬底支架，所述衬底支架用于支撑半导体衬底30，所述衬底支架包括：支架底座10和设置于支架底座10上的多个支撑柱20，半导体衬底30的下边缘的一周固定于支撑柱20的顶部。请参考图2所示的现有技术的半导体衬底在酸槽中清洗的原理示意图，并结合图1，在进行湿法刻蚀工艺时，刻蚀剂沿平行于半导体衬底30的表面的方向A流过，半导体衬底30上由于有图形31的阻挡，该图形31附近的颗粒无法被去除。
为了解决上述问题，本发明提供一种酸槽，本发明解决的问题是提供一种酸槽，能够在不损伤半导体衬底和半导体衬底上形成的图形的基础上，去除颗粒缺陷。
为解决上述问题，本发明提供一种用于湿法刻蚀工艺的酸槽，包括用于放置半导体衬底的衬底支架，所述衬底支架包括：支架底座；多个支撑柱，设置于所述支架底座上，所述支撑柱上设置有旋转装置，所述半导体衬底设置于所述旋转装置上，所述半导体衬底能够随着所述旋转装置进行转动。
具体地，请参考图3所示的本发明一个实施例的酸槽的衬底支架结构示意图。本发明所述的酸槽包括衬底支架，所述衬底支架包括：支架底座100；多个支撑柱200，设置于所述支架底座100上，所述支撑柱200上设置有旋转装置400，半导体衬底300设置于所述旋转装置400上，所述半导体衬底300能够随着所述旋转装置400进行转动。
作为本发明的一个实施例，所述旋转装置400为滚轮，所述滚轮内设置有卡槽，所述半导体衬底300设置于所述卡槽内。在所述滚轮的带动下，半导体衬底300能够在酸槽内转动，
作为本发明的一个实施例，所述支撑柱的数目为3个。在其他的实施例中，所述支撑柱还可以为2个、4个或者更多个。
综上，本发明通过在酸槽的衬底支撑架上设置旋转装置，使得半导体衬底能够随着旋转装置进行转动，使得半导体衬底上的图形能够在某段时间内平行于水流方向，更有效的去除位于图形附近的颗粒缺陷，提高了湿法刻蚀的清洗效果和最终形成的半导体衬底的良率。
因此，上述较佳实施例仅为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (2)

1.一种用于湿法刻蚀工艺的酸槽，包括用于放置半导体衬底的衬底支架，其特征在于，所述衬底支架包括：
支架底座；
多个支撑柱，设置于所述支架底座上，所述支撑柱上设置有旋转装置，所述半导体衬底设置于所述旋转装置上，所述半导体衬底能够随着所述旋转装置进行转动，所述旋转装置为滚轮，所述滚轮内设置有卡槽，所述半导体衬底设置于所述卡槽内。
2.如权利要求1所述的酸槽，其特征在于，所述支撑柱的数目3个。
CN201410060590.7A 2014-02-21 2014-02-21 用于湿法刻蚀工艺的酸槽 Active CN103839773B (zh)

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CN202888143U (zh) * 2012-11-09 2013-04-17 浙江昱辉阳光能源江苏有限公司 一种传送滚轮及化学腐蚀装置
CN203437362U (zh) * 2013-08-26 2014-02-19 中芯国际集成电路制造(北京)有限公司 晶圆清洗装置

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KR100644054B1 (ko) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 세정 장치 및 게이트 산화막의 전세정 방법
KR100630227B1 (ko) * 2004-12-31 2006-09-29 동부일렉트로닉스 주식회사 습식 식각 장치
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202888143U (zh) * 2012-11-09 2013-04-17 浙江昱辉阳光能源江苏有限公司 一种传送滚轮及化学腐蚀装置
CN203437362U (zh) * 2013-08-26 2014-02-19 中芯国际集成电路制造(北京)有限公司 晶圆清洗装置

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