CN103825191B - A kind of narrow spaces high peak power pulse formula semiconductor laser device driving circuit - Google Patents
A kind of narrow spaces high peak power pulse formula semiconductor laser device driving circuit Download PDFInfo
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- CN103825191B CN103825191B CN201410106711.7A CN201410106711A CN103825191B CN 103825191 B CN103825191 B CN 103825191B CN 201410106711 A CN201410106711 A CN 201410106711A CN 103825191 B CN103825191 B CN 103825191B
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Abstract
Narrow spaces high peak power pulse formula semiconductor laser device driving circuit of the present invention comprises: resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, electric capacity C1, electric capacity C2, diode D1, diode D2, transformation instrument transformer T1, transistor N1, transistor N2 and semiconductor laser LD1.Resistance R3 in circuit, resistance R5, transistor N2, diode D1, resistance R4, transformation instrument transformer T1 form circuits for triggering.Resistance R1, resistance R2, resistance R6, resistance R7, transistor N1, diode D2?, electric capacity C2, electric capacity C1 and semiconductor laser LD1 constitute pulse driving circuit for semiconductor laser jointly.The present invention can realize the narrow spaces high-peak power laser pulse of number ns level, solves traditional bipolar, burning field acting type transistor driver circuit drive current is little, actuating speed is slow problem.
Description
Technical field
The present invention relates to a kind of pulse type semiconductor laser drive circuit.
Background technology
Pulse type semiconductor laser drive circuit can drive semiconductor laser to produce pulse laser, can be applicable to the field such as distributed Raman fiber temperature sensor, pulse type laser rangefinder.In distributed Raman fiber temperature sensor, the pulsewidth of pump Pu laser pulse is less, and system attainable temperature space resolution is higher.And for pulse type laser rangefinder, Emission Lasers pulsewidth is less, then mean that attainable range accuracy is higher.Laser pulse width reduce the minimizing meaning pulsed laser energy, in order to the ranging of not influential system, keep necessary pulse energy, the peak power improving laser pulse certainly will be needed.Therefore the laser pulse light source of high-peak power, narrow spaces promotes the performance index of distributed Raman fiber temperature sensor, pulse type laser rangefinder and has great significance.
The peak power of pulse type semiconductor laser (as 905nm, 980nm series) in the market can reach tens of watts, and corresponding peak drive current can reach tens of ampere.The general drive circuit based on double pole triode, burning field effect transistor is difficult under so large drive current, realize the narrow spaces laser pulse that half pulsewidth reaches several ns level because of reasons such as junction capacitance are larger, and the narrowest half pulsewidth that can realize is generally all more than 20ns.Although the seed light can amplifying low peak power narrow spaces by image intensifer as pulsed fiber lasers device realizes the narrow spaces high-peak power laser pulse of number ns level, its cost is high, volume is large.
Summary of the invention
The object of this invention is to provide the narrow spaces high peak power pulse formula semiconductor laser device driving circuit that a kind of structure is simple, cost is low.
Narrow spaces high peak power pulse formula semiconductor laser device driving circuit of the present invention comprises: resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, electric capacity C1, electric capacity C2, diode D1, diode D2, transformation instrument transformer T1, transistor N1, transistor N2 and semiconductor laser LD1, one end of resistance R3 is connected with the base stage of one end of resistance R5 and transistor N2, the other end of resistance R5 and the emitter of transistor N2 are connected with signal ground, the collector electrode of transistor N2 is connected with one end of the positive pole of diode D1 and resistance R4, the other end of resistance R4 is connected with one end of transformation instrument transformer T1 primary winding, the other end of transformation instrument transformer T1 primary winding is connected 5V-12V D.C. regulated power supply jointly with the negative pole of diode D1, diode D2, resistance R6, electric capacity C2 and semiconductor laser LD1 forms parallel circuits, wherein, the positive pole of semiconductor laser LD1 is connected with the negative pole of diode D2, the negative pole of semiconductor laser LD1 is connected with the positive pole of diode D2, semiconductor laser LD1 positive pole in parallel circuits is connected with the link of diode D2 negative pole one end with the emitter of transistor N1 and transformation instrument transformer T1 secondary coil, semiconductor laser LD1 negative pole in parallel circuits is connected with Power Groud with the link of diode D2 positive pole, the other end of transformation instrument transformer T1 secondary coil is connected with one end of resistance R2, the other end of resistance R2 is connected with the base stage of transistor N1, the collector electrode of transistor N1 is connected with one end of one end of resistance R1 and electric capacity C1, the other end of resistance R1 is connected with the adjustable DC power supply of 200V-300V, the other end of electric capacity C1 is connected with one end of resistance R7, the other end of resistance R7 is connected with Power Groud.
Beneficial effect of the present invention is:
Narrow spaces high peak power pulse formula semiconductor laser device driving circuit of the present invention adopts the rapid large-current pulse drive circuit based on avalanche transistor and narrows pulsewidth further in conjunction with transformation instrument transformer circuits for triggering and the auxiliary capacitor being connected in parallel on semiconductor laser two ends, improve peak power, thus the narrow spaces high-peak power laser pulse of number ns level can be realized, solve traditional bipolar, burning field acting type transistor driver circuit drive current is little, actuating speed is slow problem.Compare with fiber laser, this drive circuit cost, power consumption are lower, and volume is less, can apply one in fields such as distributed Raman fiber temperature sensor, pulse type laser rangefinders.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of narrow spaces high peak power pulse formula semiconductor laser device driving circuit.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.
With reference to Fig. 1, narrow spaces high peak power pulse formula semiconductor laser device driving circuit of the present invention comprises: resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, electric capacity C1, electric capacity C2, diode D1, diode D2, transformation instrument transformer T1, transistor N1, transistor N2 and semiconductor laser LD1, one end of resistance R3 is connected with the base stage of one end of resistance R5 and transistor N2, the other end of resistance R5 and the emitter of transistor N2 are connected with signal ground, the collector electrode of transistor N2 is connected with one end of the positive pole of diode D1 and resistance R4, the other end of resistance R4 is connected with one end of transformation instrument transformer T1 primary winding, the other end of transformation instrument transformer T1 primary winding is connected 5V-12V D.C. regulated power supply VCC jointly with the negative pole of diode D1, diode D2, resistance R6, electric capacity C2 and semiconductor laser LD1 forms parallel circuits, wherein, the positive pole of semiconductor laser LD1 is connected with the negative pole of diode D2, the negative pole of semiconductor laser LD1 is connected with the positive pole of diode D2, semiconductor laser LD1 positive pole in parallel circuits is connected with the link of diode D2 negative pole one end with the emitter of transistor N1 and transformation instrument transformer T1 secondary coil, semiconductor laser LD1 negative pole in parallel circuits is connected with Power Groud with the link of diode D2 positive pole, the other end of transformation instrument transformer T1 secondary coil is connected with one end of resistance R2, the other end of resistance R2 is connected with the base stage of transistor N1, the collector electrode of transistor N1 is connected with one end of one end of resistance R1 and electric capacity C1, the other end of resistance R1 is connected with the adjustable DC power supply HV of 200V-300V, the other end of electric capacity C1 is connected with one end of resistance R7, the other end of resistance R7 is connected with Power Groud.
In figure, INPUT represents triggering signal input.Resistance R3, resistance R5, transistor N2, diode D1, resistance R4, transformation instrument transformer T1 form circuits for triggering.Resistance R3, resistance R5 form the input queued switches network of circuits for triggering, and transformation instrument transformer T1, resistance R4, transistor N2 form transformation instrument transformer drive circuit, and diode D1 is for the protection of transformation instrument transformer T1.Resistance R1, resistance R2, resistance R6, resistance R7, transistor N1, diode D2, electric capacity C2, electric capacity C1 and semiconductor laser LD1 constitute pulse driving circuit for semiconductor laser jointly.Wherein, adjustable DC power supply HV, the resistance R1 of 200V-300V, electric capacity C1, resistance R7, the charge circuit of Power Groud composition to electric capacity C1; electric capacity C1, resistance R7, semiconductor laser LD1, transistor N1 constitute the discharge loop of electric capacity C1; diode N2 and resistance R6 is not subject to the damage of reverse voltage pulse for the protection of semiconductor laser LD1; electric capacity C2 as auxiliary energy storage capacitor, for half pulsewidth of further compress and the peak power of improving laser pulse.
Transistor N1 adopts quick high pressure resistant big current avalanche transistor, as the ZTX415 snowslide transistor that Zetex company produces, its collector-base reverse breakdown voltage VCBO can reach 260V, and maximum collector pulse (when half pulsewidth is 20ns) electric current I CM reaches 60A.Diode D2 adopts quick Schottky diode, as MUR160.Transformation instrument transformer T1 adopts quick transformation instrument transformer, as ADT1-1WT.Transistor N1 adopts high-speed switch type transistor, as FBR520.In order to reduce the impact of device distributed inductance, electric capacity C1 can adopt multiple Capacitance parallel connection, and resistance can adopt multiple resistor coupled in parallel, and device used adopts undersized surface mounted package as far as possible, and the pin of semiconductor laser LD1 should be as far as possible short.When making printed circuit board (PCB), for reducing the impact of circuit board distributed constant less as far as possible, fast circuit design principle designing printed circuit board should be followed, as: the layout of components and parts should be as far as possible compact, and the lead-in wire between device should be as far as possible short, should arrange large-area ground wire etc.
During work, need at the input input start pulse signal of this narrow spaces high peak power pulse formula semiconductor laser device driving circuit, half pulsewidth of trigger impulse is about 50ns, when start pulse signal is low level, transistor N2 ends, the primary winding no current of transformation instrument transformer T1 passes through, secondary coil no-voltage signal exports, now transistor N1 is in cut-off state, and the adjustable DC power supply HV of 200V-300V is charged to electric capacity C1 by the loop of electric capacity C1, resistance R7 and Power Groud composition.When start pulse signal is high level, transistor N2 conducting, the primary winding of transformation instrument transformer T1 has electric current to pass through, secondary coil exports the voltage signal amplified and goes to drive transistor N1, now transistor N1 enters avalanche condition, electric capacity C1 ties through the CE of transistor N1, semiconductor laser LD1, resistance R7 discharges, now semiconductor laser LD1 has the pulse current of large peak current fast to pass through, thus drive semiconductor laser LD1 to send the laser pulse of burst pulse high-peak power, electric capacity C2 absorbs portion of energy in electric capacity C1 discharge process, electric current in semiconductor laser LD1 gives off energy again when being in peak state, thus narrow the pulsewidth of laser pulse further and promote peak optical powers.Transformation instrument transformer T1 is adopted to have the driving voltage utilizing and promote between transistor N1 base-emitter, accelerate the time that transistor N1 enters avalanche condition, the transformation mutual inductance drive circuit of its uniqueness can also also effectively suppress bounce-back signal to be scratched the dry of laser pulse shape by insulation triggering circuit in addition.
The value of electric capacity C1 can be estimated according to following formula (1):
C1×Uc=Ip×τ（1）
Wherein C1 is the capacitance of electric capacity C1, maximum voltage value when Uc is electric capacity C1 charging, and peak current when Ip is electric capacity C1 electric discharge, τ is half pulsewidth of laser pulse.Suppose that Ip be 50A, Uc be 250V, τ is 5ns, then the value of electric capacity C1 is about 1nF.
The value of electric capacity C2 is different because of the distributed constant of concrete printed circuit, is roughly distributed between 100pF to 400pF, and concrete value can experimentally situation be selected.Resistance R1 can determine according to the repetition rate of pulse, is generally tens K Ω.Resistance R7 is current-limiting resistance, is generally several Ω, can adjust according to actual required laser drive current.
Claims (1)
1. a narrow spaces high peak power pulse formula semiconductor laser device driving circuit, it is characterized in that comprising: resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, electric capacity C1, electric capacity C2, diode D1, diode D2, transformation instrument transformer T1, transistor N1, transistor N2 and semiconductor laser LD1, one end of resistance R3 is connected with the base stage of one end of resistance R5 and transistor N2, the other end of resistance R5 and the emitter of transistor N2 are connected with signal ground, the collector electrode of transistor N2 is connected with one end of the positive pole of diode D1 and resistance R4, the other end of resistance R4 is connected with one end of transformation instrument transformer T1 primary winding, the other end of transformation instrument transformer T1 primary winding is connected 5V-12V D.C. regulated power supply (VCC) jointly with the negative pole of diode D1, diode D2, resistance R6, electric capacity C2 and semiconductor laser LD1 forms parallel circuits, wherein, the positive pole of semiconductor laser LD1 is connected with the negative pole of diode D2, the negative pole of semiconductor laser LD1 is connected with the positive pole of diode D2, semiconductor laser LD1 positive pole in parallel circuits is connected with the link of diode D2 negative pole one end with the emitter of transistor N1 and transformation instrument transformer T1 secondary coil, semiconductor laser LD1 negative pole in parallel circuits is connected with Power Groud with the link of diode D2 positive pole, the other end of transformation instrument transformer T1 secondary coil is connected with one end of resistance R2, the other end of resistance R2 is connected with the base stage of transistor N1, the collector electrode of transistor N1 is connected with one end of one end of resistance R1 and electric capacity C1, the other end of resistance R1 is connected with the adjustable DC power supply (HV) of 200V-300V, the other end of electric capacity C1 is connected with one end of resistance R7, the other end of resistance R7 is connected with Power Groud.
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| CN201410106711.7A CN103825191B (en) | 2014-03-21 | 2014-03-21 | A kind of narrow spaces high peak power pulse formula semiconductor laser device driving circuit |
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| CN104466667B (en) * | 2014-12-03 | 2017-09-29 | 张石 | A kind of high current high frequency LD pulse driving circuits of low-power consumption |
| CN105870778A (en) * | 2016-06-21 | 2016-08-17 | 中国工程物理研究院应用电子学研究所 | Large-power laser fuze pulse driving source |
| CN106325165A (en) * | 2016-09-27 | 2017-01-11 | 北京理工大学 | High-voltage variable frequency narrow pulse laser power source |
| CN106451060B (en) * | 2016-10-13 | 2023-10-27 | 华北电力大学（保定） | Laser driving circuit |
| CN106877171B (en) * | 2017-04-17 | 2023-10-27 | 华北电力大学（保定） | Semiconductor laser power supply circuit |
| CN107482472B (en) * | 2017-08-30 | 2019-07-09 | 上海脉泽光电科技有限公司 | A kind of semiconductor laser drive |
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| JPH0779042A (en) * | 1991-03-22 | 1995-03-20 | Sony Tektronix Corp | Laser diode driving circuit |
| US5845488A (en) * | 1996-08-19 | 1998-12-08 | Raytheon Company | Power processor circuit and method for corona discharge pollutant destruction apparatus |
| CN201570776U (en) * | 2009-12-03 | 2010-09-01 | 宁波振东光电有限公司 | Pulse drive circuit of semiconductor laser |
| CN101764352B (en) * | 2009-12-03 | 2011-04-13 | 宁波振东光电有限公司 | Pulse driving circuit for semiconductor laser |
| CN101895058B (en) * | 2010-07-07 | 2011-11-16 | 中国科学院上海光学精密机械研究所 | High-speed narrow pulse modulation driving power supply for semiconductor laser |
| CN203747238U (en) * | 2014-03-21 | 2014-07-30 | 中国计量学院 | Pulse type semiconductor laser driving circuit |
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