CN103824922A - LED with high current extraction efficiency - Google Patents
LED with high current extraction efficiency Download PDFInfo
- Publication number
- CN103824922A CN103824922A CN201110458418.3A CN201110458418A CN103824922A CN 103824922 A CN103824922 A CN 103824922A CN 201110458418 A CN201110458418 A CN 201110458418A CN 103824922 A CN103824922 A CN 103824922A
- Authority
- CN
- China
- Prior art keywords
- layer
- deposited
- led
- metal film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000002310 reflectometry Methods 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 3
- 239000010948 rhodium Substances 0.000 claims abstract description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052681 coesite Inorganic materials 0.000 abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 abstract description 8
- 238000013459 approach Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to an LED with high current extraction efficiency. The LED comprises a substrate disposed at a bottom layer, a metal film layer deposited on the substrate, a SiO2 layer covering the metal film layer, and ITO and a metal electrode which are deposited on the SiO2 layer. The substrate is a P-GaN layer. A metal film whose reflectivity is greater than 70%, such as a silver film, a copper film, a rhodium film and the like, is deposited on the surface of an epitaxial wafer, then a structure similar to a CBL is manufactured, next, the SiO2 layer is deposited to right cover the metal film, the SiO2 layer serves as a CBL, and then the ITO and the metal electrode are deposited. By adopting such a technical scheme, the high reflectivity of a metal film is utilized so that light emitted towards an electrode is mostly reflected to the inside of an LED body and is emitted out of the LED body through other approaches, thus the light extraction efficiency is improved.
Description
Technical field
the present invention relates to LED chip and manufacture field.
Background technology
the structure of LED in prior art, it is deposition current barrier layer on p-type GaN, then deposition current extension layer and electrode on current barrier layer, the situation that this structure can cause the light sending from electrode below to be absorbed by electrode, thus cause the light extraction efficiency of LED of the prior art not high.
Summary of the invention
the present invention seeks to increase the luminous reflectanc of electrode below, thereby reduce the absorption of electrode pair light, improve light extraction efficiency.
in order to reach above with technical purpose, technical scheme of the present invention is: a kind of high electric current takes out efficiency LED, comprise be positioned at bottom substrate, be deposited on described substrate top metal film layer, be covered in the SiO on described metal film layer
2
layer and be deposited on described SiO
2
iTO and the metal electrode of layer top.
preferably, described substrate is P-GaN layer.
preferably, the metallic film that is greater than 70% at epitaxial wafer surface deposition reflectivity, as silver, copper, rhodiums etc., are then made into the structure of similar CBL, then deposit one deck SiO2 layer and just in time cover on metallic film, the effect of this layer of SiO2 is CBL, then deposits ITO and metal electrode again.
owing to adopting technique scheme, the present invention utilizes the high reflectance of metallic film that the wide part of directive electrode is reflected back in LED body, thereby it is external to shine LED by other approach, has improved light extraction efficiency.
Accompanying drawing explanation
accompanying drawing 1 is the structural representation that high electric current according to the present invention takes out efficiency LED;
accompanying drawing 2 is the manufacturing process schematic diagram that high electric current according to the present invention takes out efficiency LED.
Embodiment
below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that, protection scope of the present invention is made to more explicit defining.
shown in accompanying drawing 1, for high electric current according to the present invention takes out the structural representation of efficiency LED, it comprise be positioned at bottom substrate, be deposited on described substrate top metal film layer, be covered in the SiO on described metal film layer
2
layer and be deposited on described SiO
2
iTO and the metal electrode of layer top.Substrate in the present embodiment is P-GaN layer, the metallic film that is greater than 70% at epitaxial wafer surface deposition reflectivity, as silver, copper, rhodium etc., utilize the high reflectance of metallic film that the wide part of directive electrode is reflected back in LED body, thereby it is external to shine LED by other approach, has improved light extraction efficiency.
shown in accompanying drawing 2, for high electric current according to the present invention takes out the manufacturing process schematic diagram of efficiency LED.First the metallic film that is greater than 70% at epitaxial wafer surface deposition reflectivity, as silver, copper, rhodiums etc. are made into similar CBL---CBL=current blocking layer be mainly for allow can not bright dipping (or being in the light) place (PN junction) not luminous, or cry and improve the structure that electric current effectively injects, then deposit one deck SiO2 layer and just in time cover on metallic film, the effect of this layer of SiO2 is CBL, then deposits ITO and metal electrode again.
above execution mode is only explanation technical conceive of the present invention and feature; its object is to allow person skilled in the art understand content of the present invention and implemented; can not limit the scope of the invention with this; all equivalences that Spirit Essence does according to the present invention change or modify, and all should be encompassed in protection scope of the present invention.
Claims (4)
1. high electric current takes out an efficiency LED, it is characterized in that: it comprise be positioned at bottom substrate, be deposited on described substrate top metal film layer, be covered in the SiO on described metal film layer
2layer and be deposited on described SiO
2iTO and the metal electrode of layer top.
2. high electric current according to claim 1 takes out efficiency LED, it is characterized in that: the reflectivity of described metallic film is greater than 70%.
3. high electric current according to claim 2 takes out efficiency LED, it is characterized in that: described metallic film is selected from the one in silver, copper, rhodium.
4. high electric current according to claim 1 takes out efficiency LED, it is characterized in that: described substrate is P-GaN layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110458418.3A CN103824922A (en) | 2011-12-31 | 2011-12-31 | LED with high current extraction efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110458418.3A CN103824922A (en) | 2011-12-31 | 2011-12-31 | LED with high current extraction efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103824922A true CN103824922A (en) | 2014-05-28 |
Family
ID=50759878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110458418.3A Pending CN103824922A (en) | 2011-12-31 | 2011-12-31 | LED with high current extraction efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103824922A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008300719A (en) * | 2007-06-01 | 2008-12-11 | Nichia Corp | Semiconductor light emitting element and manufacturing method thereof |
| CN102157639A (en) * | 2011-03-01 | 2011-08-17 | 湘能华磊光电股份有限公司 | LED (Light-Emitting Diode) chip and preparation method thereof |
| CN202384390U (en) * | 2011-12-31 | 2012-08-15 | 聚灿光电科技(苏州)有限公司 | Light-emitting diode (LED) with high current extraction efficiency |
-
2011
- 2011-12-31 CN CN201110458418.3A patent/CN103824922A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008300719A (en) * | 2007-06-01 | 2008-12-11 | Nichia Corp | Semiconductor light emitting element and manufacturing method thereof |
| CN102157639A (en) * | 2011-03-01 | 2011-08-17 | 湘能华磊光电股份有限公司 | LED (Light-Emitting Diode) chip and preparation method thereof |
| CN202384390U (en) * | 2011-12-31 | 2012-08-15 | 聚灿光电科技(苏州)有限公司 | Light-emitting diode (LED) with high current extraction efficiency |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant after: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. Address before: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant before: Focus Lightings Tech Inc. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: FOCUS LIGHTING (SUZHOU) CO., LTD. TO: FOCUS LIGHINGS TECHNOLOGY CO., LTD. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140528 |