CN103809239B - 亚波长波导及制备方法 - Google Patents
亚波长波导及制备方法 Download PDFInfo
- Publication number
- CN103809239B CN103809239B CN201210445107.8A CN201210445107A CN103809239B CN 103809239 B CN103809239 B CN 103809239B CN 201210445107 A CN201210445107 A CN 201210445107A CN 103809239 B CN103809239 B CN 103809239B
- Authority
- CN
- China
- Prior art keywords
- sub
- periodicity
- hard mask
- layer
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000001259 photo etching Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000000835 fiber Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210445107.8A CN103809239B (zh) | 2012-11-09 | 2012-11-09 | 亚波长波导及制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210445107.8A CN103809239B (zh) | 2012-11-09 | 2012-11-09 | 亚波长波导及制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103809239A CN103809239A (zh) | 2014-05-21 |
| CN103809239B true CN103809239B (zh) | 2016-06-15 |
Family
ID=50706277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210445107.8A Active CN103809239B (zh) | 2012-11-09 | 2012-11-09 | 亚波长波导及制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103809239B (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107942415A (zh) * | 2017-12-07 | 2018-04-20 | 河北工程大学 | 一种制备亚波长抗反射压膜的方法 |
| CN108037561A (zh) * | 2017-12-14 | 2018-05-15 | 中国科学院光电技术研究所 | 一种基于超表面的芯片激光雷达位相调控的波导结构 |
| CN111025473B (zh) * | 2019-11-22 | 2022-06-28 | 纤瑟(天津)新材料科技有限公司 | 一种用于在固体波导和swg波导之间建立耦合的耦合结构 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181635A (zh) * | 1996-10-28 | 1998-05-13 | 索尼株式会社 | 衬底上量子线及其制造方法以及具有衬底上量子线的器件 |
| CN1801478A (zh) * | 2004-06-10 | 2006-07-12 | 台湾积体电路制造股份有限公司 | 半导体元件、半导体纳米线元件及其制作方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2699955A4 (en) * | 2011-04-20 | 2014-12-17 | Hewlett Packard Development Co | OPTICAL ELEMENTS BASED ON A SUB-WAVELENGTH DIFFRACTION NETWORK |
-
2012
- 2012-11-09 CN CN201210445107.8A patent/CN103809239B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1181635A (zh) * | 1996-10-28 | 1998-05-13 | 索尼株式会社 | 衬底上量子线及其制造方法以及具有衬底上量子线的器件 |
| CN1801478A (zh) * | 2004-06-10 | 2006-07-12 | 台湾积体电路制造股份有限公司 | 半导体元件、半导体纳米线元件及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103809239A (zh) | 2014-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101620300B (zh) | 兼容cmos的集成电介质光波导耦合器和制造 | |
| CN105209947B (zh) | 光波导与单模光纤的耦合方法和耦合装置 | |
| CN108603982B (zh) | 用于光耦合的波导结构 | |
| JP2013514555A (ja) | 導波路格子結合器を有する光集積回路 | |
| CN102323646B (zh) | 光栅耦合器及其制作方法 | |
| CN204302526U (zh) | 偏振分束旋转器 | |
| CN105093408B (zh) | 一种基于模式演变原理的硅基纳米线偏振分束器 | |
| CN108983352B (zh) | 一种端面耦合器及其制备方法 | |
| CN204302527U (zh) | 基于bcb键合工艺的耦合器结构 | |
| CN105785508A (zh) | 基于bcb键合工艺的耦合器结构及其制作方法 | |
| CN108873161B (zh) | 硅基光波导结构及其制作方法 | |
| US20120156369A1 (en) | Method of forming optical coupler | |
| CN103605189B (zh) | 一种表面等离激元光波导滤波器 | |
| CN106461866A (zh) | 模斑转换器以及用于光传导的装置 | |
| CN103809239B (zh) | 亚波长波导及制备方法 | |
| CN103809238B (zh) | 亚波长y分支波导及制备方法 | |
| CN102662212B (zh) | 一种光子晶体及其制备方法 | |
| CN110635021B (zh) | 飞秒激光直写波导耦合超导纳米线单光子探测器 | |
| CN105785507A (zh) | 偏振分束旋转器 | |
| Karsenty | Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation | |
| CN109283619B (zh) | 基于双层聚合物波导的模斑转换器及其制备方法 | |
| CN203616502U (zh) | 一种表面等离激元光波导滤波器 | |
| CN203673098U (zh) | 一种硅基光波导偏振转换器 | |
| CN115877512A (zh) | 一种低损耗紧凑型mmi功率耦合器及其制作方法 | |
| CN105431766A (zh) | 具有基于等离子体激元的耦合装置的光调制器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170614 Address after: 226009 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Bei Lou Park Development Research Co-patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Patentee after: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Address before: 226009 Nantong science and Technology Industrial Park, Su Tong Road, Jiangsu, No. 14, No. 30 Co-patentee before: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: JIANGSU SUNFY OPTOELECTRONICS TECHNOLOGY CO.,LTD. Co-patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee after: Nantong Xinwei Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address after: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee after: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: NANTONG OPTO-ELECTRONICS ENGINEERING CENTER, CHINESE ACADEMY OF SCIENCES Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240529 Address after: 200050 No. 865, Changning Road, Shanghai, Changning District Patentee after: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Country or region after: China Address before: 226009 North Building of Jiangcheng R & D Park, No. 1088, Jiangcheng Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province Patentee before: Nantong Xinwei Research Institute Country or region before: China Patentee before: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |