CN1038036A - Method with the after-glow plasma clean surface - Google Patents
Method with the after-glow plasma clean surface Download PDFInfo
- Publication number
- CN1038036A CN1038036A CN89103142A CN89103142A CN1038036A CN 1038036 A CN1038036 A CN 1038036A CN 89103142 A CN89103142 A CN 89103142A CN 89103142 A CN89103142 A CN 89103142A CN 1038036 A CN1038036 A CN 1038036A
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- CN
- China
- Prior art keywords
- article
- plasma
- gas
- nitrogen
- mixture
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Cleaning In General (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Detergent Compositions (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention cleans article to be cleaned (10) under the effect of a kind of twilight sunset low temperature plasma.Its method is these article to be placed on by microwave discharge etc. produce in the expanding chamber (7) of low-temperature plasma device.The gas that generates plasma preferably contains fluoridizing of small scale amount or the nitrogen of chlorinated compound (particularly Nitrogen trifluoride) and the mixture of oxygen.The present invention is applicable to the cleaning stainless steel, pottery, and porcelain or glassware, its method is decomposed its pollutant such as lubricating oil and grease and is reached cleaning.The instrument that the present invention is specially adapted in the nuclear industry cleans.
Description
The present invention relates to the method on article-cleaning surface.For example clean all or part of metal surface that is covered by oil or fat, the optical fiber of cleaning ceramic article or glass matrix, but be not limited to these purposes.The present invention be more particularly directed to the processing of article surface being cleaned with plasma.
Plasma one speech comprises and contains neutral particle (atom or molecule) simultaneously, the various media of cation and electronics, plasma can by manually with certain gas heated to high temperature or be placed under the highfield and obtain.
I type plasma (generally do not have other any qualification and be called as plasma) is a kind of strong ionization medium that is in thermodynamic equilibrium state under very high temperature.Its available device fabrication as the plasma torch class is come out.Its temperature is 10,000 to 15,000 ° of K.Can be with I type plasma by the destruction article-cleaning surface of high temperature.Because this class plasma is confined in the limited range of discharge volume, so the processing list area is little.The U.S. 4,555, No. 303 patent has just been narrated such plasma.
II type plasma (being commonly referred to as low temperature plasma) is a kind of slight Ionized medium, and its temperature is very low, in fact is lower than 1000 ° of K.But this temperature is inaccurate, because medium at this moment is in the uneven attitude of height thermodynamics.Low temperature plasma is in low pressure (less than 100 millibars) gas, and discharging with electrode or without electrode obtains, for example by electric power discharge, microwave or high-frequency discharge.Such plasma is described in French Patent (FRP) 2,368, in 308.
III type plasma is called after-glow plasma hereinafter; In scientific literature, use " activated gas " expression sometimes, maybe when the isoionic gas of generation is nitrogen, then be called " back exciting light ".After-glow plasma obtains making its expansion behind a kind of discharge of plasma in low temperature under dynamic conditions.This expansion can be carried out in several cubic metres large volume.Usually carry out when pressure is lower than 100 millibars, but also can surpass atmospheric pressure, medium wherein is in high thermodynamics non-equilibrium, and its mean temperature is the temperature of ambient atmosphere, as 298 ° of K.
After-glow plasma is used for the processing of frosting more, particularly european patent application 84,101,926,8 and 84.101.935.9, its purpose is to increase the power of catching of frosting, and it shows the contact angle that can reduce the water on the material surface especially and increases its wettability.Yet except for the plastic material, people also do not know other special applications of after-glow plasma.
The present invention it has surprisingly been found that, after-glow plasma is to some material, particularly by stainless steel, pottery, porcelain, the goods that glass is made, have the effect of cleaning surfaces, and these materials are not produced adverse influence or change, have been found that, pollutant that deposits on the above-mentioned material surface such as oil, fat or organic substance will be decomposed after by twilight sunset plasma effect a period of time.The time of its effect is the pressure in the container of plasma when expanding and the function of article surface situation, and both just the temperature of plasma approached room temperature, also can decompose.
Used different plasma is to adopt pure gas or its mist, particularly argon gas, oxygen (O in the scope of the invention
2), chlorine (N
2), even air, they are called plasma-generating gas.
Generate preferably a kind of admixture of gas of plasma medium, wherein contain less than 10% fluoridize or chlorinated compound.Have been noted that the existence of in fact this gas can increase the cleaning action of after-glow plasma.Fluorinated compound is selected from Nitrogen trifluoride (NF especially
3), carbon tetrafluoride (CF
4), sulphur hexafluoride (SF
6) or fluorine gas (F
2), and chlorinated compound is selected from agene (NCl especially
3), carbon tetrachloride (CCl
4), chloroform (CHCl
3), carrene (CH
2Cl
2) or chlorine (Cl
2).
The better composition that produces plasma medium is 75% oxygen under 12 millibars of pressure, 23.5% nitrogen and 1.5% Nitrogen trifluoride.
Under above-mentioned pressure and composition situation, it is 1 to 15 minute if clean ganoid words of required processing time of surface of stainless steel product fully; If rough surface, required time are 90 to 100 minutes.Be enough to all decompose all contaminants that are deposited on the article surface during this period of time, and no matter the shape of article how, both just pollutant was deposited on also can divide in impression or the cave groove and took off.
Therefore, fully the article-cleaning surface need not special operation, only needs simply article to be placed on to get final product in the expansion vessel of twilight sunset low temperature plasma effect being subjected to.The method is specially adapted to clean the quilt that uses in the nuclear industry and contains the oil of radioelement or the instrument that fat pollutes.
Can understand the present invention and advantage thereof better by following description.Comprising the example of article-cleaning surface method in producing the expanding chamber of low-temperature plasma device, and be illustrated by accompanying drawing.Fig. 1 in the accompanying drawing is this schematic representation of apparatus, and Fig. 2 is the schematic diagram of a big capacity expanding chamber.
Cleaning device of the present invention comprises 1 plasma generator 1.Here, this generator is the microwave generator of working under the frequency of 2450MHz, output changes adjustable power to 1500W, places the coupler 2 of 1 parallelepiped-shaped between generator I and quartz ampoule 3 (wherein take place induced by the microwave electric energy discharge).Owing to plug 11 and screw rod 12 and an interior diaphragm (not shown) are arranged, and make the conformability of this coupler fine.The detailed description of this coupler is seen " J.Phys.F.Sc. " (inst 16-1983,1160-1161 page or leaf).The diameter of quartz ampoule 3 is 15 mm.
What produce in the pipe 3 is II type low temperature plasma.Shown in the figure left side, an end of pipe connects three gas cylinders 13,14,15.Nitrogen, oxygen and Nitrogen trifluoride wherein are housed respectively.It is to it is considered herein that preferable constituent at pipe 3 and 13,14,3 mass flow controllers 16,17,18 to be housed respectively between 15 each bottles.They are used for regulating and measuring the gas flow of supply pipe 3, thereby have just measured the ratio of gas.Pipe 3 also is equipped with a pressure gauge 4.
As scheme shown in the right, the other end of pipe 3 is connected with expanding chamber 7 with concave surface 19 ball-type connectors by convex surface 6, and chamber 7 is connected with the gatherer 8 that the copper sponge is housed with concave surface 21 ball-type connectors by convex surface 20.Second gatherer 9 with cooled with liquid nitrogen is placed on after first gatherer 8 in order, and is connected with the vacuum pump that do not draw among the figure, and the power of vacuum pump is 35m under atmospheric pressure
3/ h.
The ball-type connector can make expanding chamber change with the volume of article to be cleaned.The volume of expanding chamber 7 is 2.5 liters among Fig. 1, and it is applicable to undersized article, as pliers or other manual instrument.Under the situation of article volume big (as pump 10), volume is that 125 liters expanding chamber 7 is suitable among use Fig. 2, and this chamber has two unit to constitute, and it can separate so that pack article to be cleaned into.Each unit all is furnished with the device of being connected, so that make tightly driving fit of expanding chamber 7 after article are packed into.
Cleaning operation comprises the pollution instrument 10 to be cleaned expanding chamber 7 of packing into, with ball adapter 19 and 20 chamber 7 is connected to an end of pipe 3, manages 3 other ends and connects gatherer 8 and 9; Adjusted device 16,17 and 18 is filled every kind of gas in required ratio in pipe 3; Make generator 1 activation and regulate coupler 2, make it in pipe 3, to produce low temperature plasma.The low temperature plasma that produces in pipe 3 is driven by the air-flow of flowing pipe 3 and is transported in the expanding chamber 7.In chamber 7, after-glow plasma is attacked organic substance, oil and the fat that pollutes tool surfaces.Instrument 10 must keep the sufficiently long time in activated gas flux, so that the material on the article surface all decomposes, and discharges from chamber 7, is collected in two gatherers 8 and 9 of arranging in order.
In said apparatus, tested various gas mixtures, from nitrogen, air, oxygen and argon gas begin, and the Halogen thing or not the test of Halogen thing etc. draw: the best that plasma generates gas is formed and when total pressure is 12 millibars is:
Oxygen (0
2) 75%
Nitrogen (N
2) 23.5%
Nitrogen trifluoride 1.5%
The microwave power that is provided by coupler is less than 160W.
Surprisingly Nitrogen trifluoride has promoted the particularly cleaning of stainless steel surfaces, has therefore reduced and has removed the required processing time of pollutant.For lubricated fat or the level and smooth instrument of oily institute's surfaces contaminated, the processing time is 15 minutes; For the instrument of rough surface, the processing time must be 90 minutes.The processing time of pottery or glassware is shorter, can very cause less than 1 second sometimes less than 1 minute.
The present invention is not limited only to above-mentioned example, also comprises the example that other are different.Spoken of to the cleaning of metal surface to the ceramic material porcelain, glass object (particularly glass fibre), the comprehensive goods of ceramics-glass-metal are effective too.Within the scope of the present invention, also can change the condition that generates after-glow plasma.As pressure, power, the expanding chamber volume produces plasma etc. by electric power discharge, microwave or high frequency.Be not that to have only oil and fat be the dirty beam thing that can be decomposed by the twilight sunset plasma, analysable material also comprises ink, and generally organic substance very causes the precipitated metal thing.
Claims (9)
1. the method on an article-cleaning surface, it is characterized in that said article (10) are to use stainless steel, glass, porcelain or the made simple substance article of pottery or the article of mictoplasm, this method comprise make article (10) under a kind of effect of twilight sunset low temperature plasma to decompose contaminant deposition in its surface enough action time.
2. according to the method for claim 1, the gas that it is characterized in that generating plasma is the mixture of oxygen and nitrogen.
3. according to the method for claim 1 or 2, the gas that it is characterized in that generating plasma is that a kind of content is fluoridized less than 10% or the mixture of chlorinated compound.
4. according to the method for claim 3, it is characterized in that fluorinated compound is selected from Nitrogen trifluoride, carbon tetrafluoride, sulphur hexafluoride and fluorine gas.
5. according to the method for claim 3, it is characterized in that chlorinated compound is selected from agene, four or three or carrene or chlorine.
6. according to the method for claim 1, the pressure that it is characterized in that generating the gas of plasma is 12 millibars, and it is to contain 75% oxygen approximately, and 23.5% nitrogen and 1.5% is fluoridized or the mixture of chlorinated compound.
7. according to the method for claim 6, it is characterized in that these article are stainless steels, the processing time is 1 to 100 minute according to its surface condition.
8. according to the method for claim 1, it is characterized in that pollutant is organic substance, particularly lubricating grease or oil.
9. clean the method for the instrument that is used for nuclear industry according to claim 1, it is characterized in that pollutant contains radioelement.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8806607 | 1988-05-10 | ||
FR8806607A FR2631258B1 (en) | 1988-05-10 | 1988-05-10 | DELAYED PLASMA SURFACE CLEANING PROCESS |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1038036A true CN1038036A (en) | 1989-12-20 |
Family
ID=9366376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN89103142A Granted CN1038036A (en) | 1988-05-10 | 1989-05-10 | Method with the after-glow plasma clean surface |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0343038A1 (en) |
JP (1) | JPH0252084A (en) |
CN (1) | CN1038036A (en) |
DK (1) | DK226989A (en) |
FR (1) | FR2631258B1 (en) |
NO (1) | NO173921C (en) |
ZA (1) | ZA893473B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100378245C (en) * | 2003-07-16 | 2008-04-02 | 松下电器产业株式会社 | Sputtering apparatus |
CN101837357A (en) * | 2010-05-04 | 2010-09-22 | 宁波大学 | Plasma body cleaning device |
CN102612731A (en) * | 2009-11-11 | 2012-07-25 | 艾克塞利斯科技公司 | Method and apparatus for cleaning residue from an ion source component |
CN104353643A (en) * | 2014-12-02 | 2015-02-18 | 上海华虹宏力半导体制造有限公司 | Maintenance system and maintenance method of reducing maintenance frequency of ultrasonic cleaner |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06285868A (en) * | 1993-03-30 | 1994-10-11 | Bridgestone Corp | Cleaning method of vulcanizing mold |
US5938854A (en) * | 1993-05-28 | 1999-08-17 | The University Of Tennessee Research Corporation | Method and apparatus for cleaning surfaces with a glow discharge plasma at one atmosphere of pressure |
FR2733437B1 (en) * | 1995-04-27 | 1997-09-12 | Aubert Bruno | PROCESS FOR SEPARATION OF CHEMICAL ELEMENTS BY FORMING VOLATILE COMPOUNDS WITH EXCITED GAS IN COLD PLASMA AND IMPLEMENTATION DEVICE |
FR2750348B1 (en) * | 1996-06-28 | 1998-08-21 | Conte | PROCESS FOR INCREASING THE WET RESISTANCE OF A BODY, BODY THUS PROCESSED AND ITS APPLICATIONS |
US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
US6274058B1 (en) | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
SG72905A1 (en) | 1997-12-18 | 2000-05-23 | Central Glass Co Ltd | Gas for removing deposit and removal method using same |
WO2000078123A1 (en) * | 1999-06-24 | 2000-12-28 | Wisconsin Alumni Research Foundation | Cold-plasma treatment of seeds to remove surface materials |
JP2012152855A (en) * | 2011-01-26 | 2012-08-16 | Osg Corp | Method of removing diamond film or hard carbon film |
CN104148334A (en) * | 2014-07-02 | 2014-11-19 | 太仓华德石太工业设备有限公司 | Method for performing industrial local cleaning through hydrocarbon/ plasmas |
DE102020131832A1 (en) | 2020-12-01 | 2022-06-02 | Universität Kassel, Körperschaft des öffentlichen Rechts | Process for the manufacture of casting molds or casting cores |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2647088B2 (en) * | 1976-10-19 | 1979-04-05 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich | Method and device for cleaning surfaces |
US4555303A (en) * | 1984-10-02 | 1985-11-26 | Motorola, Inc. | Oxidation of material in high pressure oxygen plasma |
WO1987002603A1 (en) * | 1985-10-29 | 1987-05-07 | Hughes Aircraft Company | Method and apparatus for atomic beam irradiation |
-
1988
- 1988-05-10 FR FR8806607A patent/FR2631258B1/en not_active Expired - Lifetime
-
1989
- 1989-05-03 NO NO891827A patent/NO173921C/en unknown
- 1989-05-08 JP JP1113871A patent/JPH0252084A/en active Pending
- 1989-05-09 DK DK226989A patent/DK226989A/en not_active Application Discontinuation
- 1989-05-10 EP EP89401297A patent/EP0343038A1/en not_active Withdrawn
- 1989-05-10 ZA ZA893473A patent/ZA893473B/en unknown
- 1989-05-10 CN CN89103142A patent/CN1038036A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100378245C (en) * | 2003-07-16 | 2008-04-02 | 松下电器产业株式会社 | Sputtering apparatus |
CN102612731A (en) * | 2009-11-11 | 2012-07-25 | 艾克塞利斯科技公司 | Method and apparatus for cleaning residue from an ion source component |
CN102612731B (en) * | 2009-11-11 | 2016-03-16 | 艾克塞利斯科技公司 | For removing the method and apparatus of residue from ion source component |
CN101837357A (en) * | 2010-05-04 | 2010-09-22 | 宁波大学 | Plasma body cleaning device |
CN101837357B (en) * | 2010-05-04 | 2011-10-05 | 宁波大学 | Plasma body cleaning device |
CN104353643A (en) * | 2014-12-02 | 2015-02-18 | 上海华虹宏力半导体制造有限公司 | Maintenance system and maintenance method of reducing maintenance frequency of ultrasonic cleaner |
CN104353643B (en) * | 2014-12-02 | 2017-07-25 | 上海华虹宏力半导体制造有限公司 | A kind of maintenance system and maintaining method for reducing ultrasonic cleaner |
Also Published As
Publication number | Publication date |
---|---|
JPH0252084A (en) | 1990-02-21 |
DK226989A (en) | 1989-11-11 |
NO173921B (en) | 1993-11-15 |
FR2631258A1 (en) | 1989-11-17 |
NO891827L (en) | 1989-11-13 |
EP0343038A1 (en) | 1989-11-23 |
ZA893473B (en) | 1990-01-31 |
DK226989D0 (en) | 1989-05-09 |
FR2631258B1 (en) | 1991-04-05 |
NO173921C (en) | 1994-02-23 |
NO891827D0 (en) | 1989-05-03 |
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