CN101837357A - Plasma body cleaning device - Google Patents

Plasma body cleaning device Download PDF

Info

Publication number
CN101837357A
CN101837357A CN 201010165134 CN201010165134A CN101837357A CN 101837357 A CN101837357 A CN 101837357A CN 201010165134 CN201010165134 CN 201010165134 CN 201010165134 A CN201010165134 A CN 201010165134A CN 101837357 A CN101837357 A CN 101837357A
Authority
CN
China
Prior art keywords
water
microwave
reative cell
control
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 201010165134
Other languages
Chinese (zh)
Other versions
CN101837357B (en
Inventor
周骏
林豪
仰明阳
颜飞彪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Yaoyao Technology Co Ltd
Original Assignee
宁波大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 宁波大学 filed Critical 宁波大学
Priority to CN2010101651340A priority Critical patent/CN101837357B/en
Publication of CN101837357A publication Critical patent/CN101837357A/en
Application granted granted Critical
Publication of CN101837357B publication Critical patent/CN101837357B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention discloses a plasma body cleaning device, which mainly consists of a microwave system and a reaction device, wherein the microwave system comprises a microwave chamber, a microwave source and a microwave control circuit, the microwave source can be regulated and controlled through the microwave control circuit, and the regulation and the control on the density of the plasma body can be realized. The cleaning device effectively avoids the electrode pollution by adopting a microwave excitation mode, and simultaneously enlarges the pressure intensity work range. Because the microwave technology is mature, the microwave leakage can be easily controlled and protected, the cleaning device has good safety performance. The work pressure intensity can be controlled through regulating and controlling the flow speed of the cleaning reaction gas and the gas pumping speed of a vacuum device, the power of the microwave source can be controlled through the microwave control circuit, and the bombarding force on the surface of cleaning samples by the plasma body and the concentration of the plasma body can be effectively regulated. Thereby, the cleaning and the surface modification in different modes can be carried out according to the cleaning samples in different material types.

Description

A kind of plasma body cleaning device
Technical field
The present invention relates to a kind of cleaning device, especially relate to a kind of plasma body cleaning device.
Background technology
In the process of optics and microelectronic element etc., the surface clean technology has crucial status.At present, the physical chemistry cleaning method of extensive use from the method for operation, is broadly divided into two kinds: wet-cleaning and dry method are cleaned.Wet-cleaning mainly relies on the effect of physics and chemistry (solvent), as the absorption by chemical active agent, soak into, dissolving and debunching action and be aided with ultrasonic wave, spray, rotation, boiling, steam and the spot that physical method is removed object surface such as shake.In the wet-cleaning process, also need follow-up oven dry and wastewater treatment operation, the cost that drops into personnel's labour protection and environmental pollution control is higher.Dry method is cleaned and is mainly contained the plasma cleaning technique, and mainly by the physics and the chemical reaction mechanism of plasma particle under the high vacuum and object surface storeroom, stripping type is removed the spot of object surface for it.Relative wet-cleaning, dry method is cleaned three-waste free discharge, consuming cost is low, cleaning is thorough, is the cleaning method of a kind of efficient height and environmental protection.In addition, the plasma of higher-energy also can carry out modification to object surface in the dry method cleaning process, improve the hygroscopicity, hydrophobicity, crease and shrink resistance, antistatic and fire-retardant etc. of object surface, and reaction depth is lower, can not damage the mechanical property of object surface.
Because cleaning, dry method has above-mentioned advantage; and the plasma Development for Cleaning Technique is very fast; therefore the dry method cleaning technique has not only obtained application in semiconductor and optoelectronics industry, and is applied in various fields such as optics preparation, precision optical machinery processing, macromolecular material processing, prevention and cure of pollution and environmental protection gradually.Yet, because the plasma cleaning technique relates to plasma physics, plasma chemical and material gas-solid boundary The Characteristic Study, need multiple technologies such as integrated chemical industry, material and electric mechanical, therefore, the technological development difficulty is bigger.On the other hand, existing corresponding plasma clean equipment also comes with some shortcomings, as the capacitance coupling type plasma body cleaning device, though it can produce the plasma of larger caliber, and manufacturing process is ripe relatively, but the plasma density of its generation is not high, the operating pressure scope is narrower, and has electrode fouling, makes its range of application be subjected to certain limitation.
Summary of the invention
Technical problem to be solved by this invention provides a kind of simple in structure, easy to use, big, electrodeless pollution of operating pressure scope, and can produce the plasma body cleaning device of high-density plasma.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of plasma body cleaning device, comprise main equipment and ancillary equipment, described ancillary equipment is mainly by gas supply device, vacuum plant and control device are formed, described control device comprises gas circuit unit and circuit unit, described main equipment mainly is made up of microwave system and reaction unit, described microwave system comprises microwave office, the microwave control circuit that is arranged at the microwave source in the described microwave office and is electrically connected with described microwave source, described reaction unit comprises the quartz cover that is arranged in the described microwave office, be arranged in the described microwave office and be arranged at the reative cell base of described quartz cover below and reative cell that the space that surrounded by described quartz cover and described reative cell base constitutes, described microwave control circuit is connected with described circuit unit by the main equipment power line, described reative cell is connected with described gas circuit unit by main air inlet pipe, described reative cell is connected with described vacuum plant by blast pipe, described gas supply device is connected with described gas circuit unit by branched inlet pipe, and described vacuum plant is connected with described circuit unit by the vacuum plant power line.
Described gas circuit unit comprises magnetic valve, gas flow regulating valve, flowmeter and vacuum meter, described branched inlet pipe is connected with described magnetic valve, described magnetic valve is connected with described gas flow regulating valve by tracheae, described gas flow regulating valve is connected with described flowmeter by tracheae, described flowmeter is connected with described main air inlet pipe by tracheae, and described main air inlet pipe is connected with described vacuum meter by tracheae.
Described circuit unit comprises general supply, be used to control the break-make of corresponding supply socket that is electrically connected with described main equipment and the corresponding supply socket that is electrically connected with described vacuum plant the device power supply (DPS) control section, be used to control described magnetic valve break-make the air inlet control section and be used for the remote manual control control section that external control is operated, described general supply is electrically connected with described device power supply (DPS) control section, described air inlet control section and described remote manual control control section respectively.
Described gas supply device comprises that at least one is used to supply the gas cylinder of cleaning reaction gas, and described gas cylinder is connected with described magnetic valve by described branched inlet pipe.
Described gas supply device can comprise two described gas cylinders, different cleaning reaction gas is housed respectively in each described gas cylinder, and each described gas cylinder is connected to form the two-way gas circuit by a described magnetic valve, a described gas flow regulating valve and a described flowmeter and described main air inlet pipe respectively.
Described microwave office comprise microwave office's cavity and with the movable microwave chamber door that cooperates of described microwave office cavity, described microwave source is arranged at the sidewall or the top of described microwave office cavity, described microwave chamber door is provided with and is used to observe the watch window that cleans the sample process, and described watch window is equipped with the micro-wave screening net on the inside side.
Described reative cell base is closely set on the bottom surface of described microwave office cavity, the bottom of running through described reative cell base and described microwave office cavity is provided with the air inlet tube head that is connected with described reative cell respectively and the tube head of giving vent to anger, described air inlet tube head is connected with described main air inlet pipe, the described tube head of giving vent to anger is connected with described blast pipe, is provided with sealing rubber ring between described reative cell base and the described quartz cover.
Be provided with water-cooling groove in the described reative cell base, run through the bottom of described microwave office cavity and the bottom of described reative cell base and be provided with water inlet tube head and the draining tube head that is connected with described water-cooling groove respectively, described water inlet tube head is connected with water supply hose, and described draining tube head is connected with scupper hose; Described control device also comprises the unit, water route, unit, described water route mainly is made up of water-cooled row, water tank and water pump, described water supply hose is connected with described water-cooled row, described water-cooled row is connected with described water tank by water pipe, described water tank is connected with described water pump by water pipe, and described water pump is connected with described scupper hose; Described circuit unit also comprises the water-cool control part, and described water-cool control is partly controlled the operation of described water pump.
On the described water-cooled row radiator fan is installed, described water-cool control is partly controlled the operation of described radiator fan; Be provided with first row's watershed partition and second row's watershed partition in the described water-cooling groove, each watershed partition and described second in described first row's watershed partition is arranged all parallel and uniformly-spaced arrangement of each watershed partition in the watershed partition, first end of each watershed partition in described first row's watershed partition is connected with an inboard of described water-cooling groove, first end of each watershed partition in described second row's watershed partition is connected with inboard another relative inboard that described water-cooling groove is connected with described first row's watershed partition, the interlaced arrangement of each watershed partition in each watershed partition in described first row's watershed partition and the described second row's watershed partition, each watershed partition in each watershed partition in described first row's watershed partition and the described second row's watershed partition is divided into a plurality of water-cooleds zone with described water-cooling groove, and described water inlet tube head and described draining tube head lay respectively in two described water-cooled zones that are separated by farthest.
Described reative cell base is provided with motor and puts groove, described motor is put the bottom that groove runs through described microwave office cavity, described motor is put in the groove and is provided with motor, the bottom that described motor is put groove is provided with the lead hole of the power line that is used to draw described motor, the openend that described motor is put groove is provided with the metal baffle that is used to isolate described reative cell and described motor storing groove, described metal baffle is provided with and is used for the axis hole that matches with the motor shaft of described motor, and the end that the motor shaft of described motor passes described axis hole is connected with rotatable rotating disk.
Compared with prior art, the invention has the advantages that:
1. the main equipment of this cleaning device mainly is made up of microwave system and reaction unit, and microwave system comprises microwave office, microwave source and microwave control circuit, can regulate and control microwave source by the microwave control circuit, realizes the regulation and control to the plasma density that produces.This cleaning device can produce highdensity plasma, and avoid electrode fouling effectively by adopting microwave excited mode, has enlarged the pressure working range simultaneously; In addition, since the microwave technology comparative maturity, the more easy to control and protection of microwave leakage, so this cleaning device has good safety performance.
2. the reaction unit in this cleaning device is simple in structure, directly place on the reative cell base by quartz cover and to constitute reative cell, and dissimilar reative cell bases can be installed as required, as water-cooled reative cell base and rotating disc type reative cell base, cleaning device with water-cooled reative cell base cleans sample by cooling in cleaning process, makes the sample of material of this cleaning device non-refractory capable of washing; Cleaning device with rotating disc type reative cell base can make the cleaning sample obtain multi-faceted cleaning by to cleaning the rotation of sample, and cleaning performance is better.
3. this cleaning device is controlled operating pressure by the flow velocity of regulation and control cleaning reaction gas or the speed of evacuation of vacuum plant, control the power of microwave source by the microwave control circuit, plasma can be regulated effectively to the bombardment dynamics on the surface of cleaning sample and the concentration of plasma, thereby the cleaning and the surface modification of different modes can be carried out according to the cleaning sample of different materials type.
4. catchment unit, road, gas circuit unit, circuit unit of the control device in this cleaning device is one, is connected with the main equipment split, not only improved the operability and the security of this cleaning device, also makes things convenient for the transportation and the installation of this cleaning device; Wherein closed water circulation Cooling Design makes the operation of this cleaning device need not external water source; Multichannel gas circuit regulation and control, the flow proportional of adjustable different cleaning reaction gas cleans; The wireless remote control function can be controlled handled easily at a distance to control device.
5. this cleaning device makes full use of the microwave control circuit of daily micro-wave oven, has reduced manufacturing cost, and its cost performance improves greatly, helps the promotion and application of plasma clean technology.
Description of drawings
Fig. 1 is that overall structure of the present invention connects block diagram;
Fig. 2 is that the gas circuit unit of control device of the present invention and the basic structure of unit, water route are connected block diagram;
Fig. 3 is the circuit diagram of the circuit unit of control device of the present invention;
Fig. 4 is the cross-sectional schematic one of main equipment of the present invention;
Fig. 5 is the top cross-sectional view of the reative cell base among Fig. 4;
Fig. 6 is the cross-sectional schematic two of main equipment of the present invention.
The specific embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
Embodiment one:
Extremely shown in Figure 5 as Fig. 1, a kind of plasma body cleaning device, comprise main equipment 1 and ancillary equipment 2, ancillary equipment 2 is mainly by gas supply device 21, vacuum plant 22 and control device 23 are formed, control device 23 comprises unit, water route 24, gas circuit unit 25 and circuit unit 26, main equipment 1 mainly is made up of microwave system 11 and reaction unit 12, microwave system 11 comprises microwave office 13, be arranged at microwave source 14 in the microwave office 13 and the microwave control circuit (not shown) that is electrically connected with microwave source 14, reaction unit 12 comprises the quartz cover 15 that is arranged in the microwave office 13, be arranged in the microwave office 13 and be arranged at the reative cell base 16 of quartz cover 15 belows and reative cell 17 that the space that surrounded by quartz cover 15 and reative cell base 16 constitutes, the microwave control circuit is connected with circuit unit 26 by main equipment power line 31, reative cell 17 is connected with gas circuit unit 25 by main air inlet pipe 33, reative cell 17 is connected with vacuum plant 22 by blast pipe 34, gas supply device 21 is connected with gas circuit unit 25 by branched inlet pipe 35, and vacuum plant 22 is connected with circuit unit 26 by vacuum plant power line 32.
In this specific embodiment, gas supply device 21 comprises two gas cylinder (not shown)s, in two gas cylinders different cleaning reaction gas is housed respectively, is connected with a branched inlet pipe 35 on two gas cylinders respectively; The gas circuit unit 25 of control device 23 as shown in Figure 2, it comprises two magnetic valves 251, two gas flow regulating valves 252, two flowmeters 253 and a vacuum meter 254, wherein a branched inlet pipe is connected with one of them magnetic valve, this magnetic valve is connected with one of them gas flow regulating valve by tracheae, this gas flow regulating valve is connected with one of them flowmeter by tracheae, this flowmeter is connected to form first via gas circuit by tracheae and main air inlet pipe again, another root branched inlet pipe is connected with another magnetic valve, this magnetic valve is connected with another gas flow regulating valve by tracheae, this gas flow regulating valve is connected with another flowmeter by tracheae, this flowmeter is connected to form the second tunnel gas circuit by tracheae and main air inlet pipe again, and two-way gas circuit splice grafting is connected with vacuum meter 254 by tracheae together.At this, magnetic valve 251 mainly plays the effect of break-make gas cylinder supply cleaning reaction gas, when electric current passes through magnetic valve 251, the air valve of magnetic valve 251 is opened, cleaning reaction gas in the gas cylinder enters in the gas circuit unit 25 by branched inlet pipe 35, and when no current passed through magnetic valve 251, the air valve of magnetic valve 251 was closed, cleaning reaction gas is cut off, and so just can control the break-make of two-way gas circuit by the control of circuit unit 26 effectively; Gas flow regulating valve 252 is used to regulate and control the charge flow rate of cleaning reaction gas; Flowmeter 253 is used to observe the flow of cleaning reaction gas, owing to adopt the two-way gas circuit to regulate and control respectively, therefore can reach different cleaning performances by regulating the flow of two kinds of different cleaning reaction gases; Vacuum meter 254 plays the effect of pressure in the observation reative cell.
At this, gas supply device 21 also can include only a gas cylinder, also can comprise two above gas cylinders, only need to use two kinds of different cleaning reaction gases generally speaking, regulate and control two kinds of different cleaning reaction gases and can reach cleaning performance well, therefore in this specific embodiment, adopt two gas cylinders that two kinds of different cleaning reaction gases are provided.
In this specific embodiment, microwave office 13 comprise microwave office's cavity 131 and with the microwave office cavity 131 movable microwave chamber door (not shown)s that cooperate, microwave source 14 is arranged at the sidewall or the top of microwave office's cavity 131, microwave chamber door is provided with and is used to observe the watch window (not shown) of cleaning the sample process, and watch window is equipped with micro-wave screening net (not shown) on the inside side; The undersized of reative cell base 16 is in the bed-plate dimension of microwave office's cavity 131, the bottom surface of microwave office's cavity 131 offers installing hole conveniently to install and to change dissimilar reative cell bases 16, reative cell base 16 is to be close on the bottom surface that is fixed on microwave office's cavity 131, the bottom of running through reative cell base 16 and microwave office's cavity 131 is provided with the air inlet tube head 36 that is connected with reative cell 17 respectively and the tube head 37 of giving vent to anger, air inlet tube head 36 is connected with main air inlet pipe 33, and the tube head 37 of giving vent to anger is connected with blast pipe 34.Be provided with water-cooling groove 4 in the reative cell base 16, run through the bottom of microwave office's cavity 131 and the bottom of reative cell base 16 and be provided with water inlet tube head 38 and the draining tube head 39 that is connected with water-cooling groove 4 respectively, water inlet tube head 38 is connected with water supply hose 18, and draining tube head 39 is connected with scupper hose 19.
In this specific embodiment, be provided with two row's watershed partitions in the water-cooling groove 4, as shown in Figure 5, be respectively first row's watershed partition 41 and second row's watershed partition 42, each watershed partition and second in first row's watershed partition 41 is arranged all parallel and uniformly-spaced arrangement of each watershed partition in the watershed partition 42, wherein first end of each watershed partition in first row's watershed partition 41 is connected with an inboard of water-cooling groove 4, first end of each watershed partition in second row's watershed partition 42 is connected with inboard another relative inboard that water-cooling groove 4 is connected with first row's watershed partition 41, second end of each watershed partition in second end of each watershed partition in first row's watershed partition 41 and the second row's watershed partition 42 is unsettled respectively, promptly be not connected with any medial surface in four medial surfaces of water-cooling groove 4, first row's watershed partition 41 and the 42 interlaced arrangements of second row's watershed partition, each watershed partition in each watershed partition in first row's watershed partition 41 and the second row's watershed partition 42 is divided into a plurality of water-cooleds zone 43 with water-cooling groove 4, and water inlet tube head 38 and draining tube head 39 lay respectively in two water-cooled zones that are separated by farthest.At this, each watershed partition in each watershed partition in first row's watershed partition 41 and the second row's watershed partition 42 plays the effect of a water conservancy diversion, first row's watershed partition 41 and second row's watershed partition, 42 interleaved are arranged and are made water-cooled zone 43 be " it " font distribution (as shown in Figure 5), water inlet tube head 38 and draining tube head 39 are arranged at respectively in two water-cooled zones that are separated by farthest, can guarantee effectively like this to flow through whole water-cooling groove 4 fully to cool off reative cell base 16 better, the sample of non-refractory capable of washing like this from the cooling water that water inlet tube head 38 enters.In present embodiment, the disclosed structure, also can adopt other structures that water-cooling groove 4 is divided into a plurality of water-cooleds zone, as long as can play the effect of cooling water flow that make through whole water-cooling groove 4.
At this, between reative cell base 16 and quartz cover 15, sealing rubber ring 5 can be set, and can on sealing rubber ring 5, coat seal grease, can reach sealing effectiveness well like this, thereby make the air-tightness of reative cell 17 good; The shape of quartz cover 15 can be designed to semi-circular (as shown in Figure 4) or shape for hat (as shown in Figure 6); In actual design process, the air inlet tube head 36 and the tube head 37 of giving vent to anger should be arranged at the both sides of reative cell base respectively, to guarantee the air inlet tube head 36 and the tube head 37 of the giving vent to anger larger distance of being separated by, if with the air inlet tube head 36 and the nearer of tube head 37 settings of giving vent to anger, then the cleaning reaction gas that enters from air inlet tube head 36 will flow out from the tube head 37 of giving vent to anger very soon, thereby will influence cleaning performance.Simultaneously the distance of air inlet tube head 36 and 37 of the tube heads of giving vent to anger can not surpass the diameter of quartz cover 15, to guarantee that it is in reative cell 17.At this, also can on the air inlet tube head 36 and the tube head 37 of giving vent to anger, internal thread be set, thereby gas diverter etc. can be installed according to actual needs, satisfy different cleaning requirements to produce different gas flow distribution.
In this specific embodiment, unit, water route 24 is mainly this cleaning device required cooling water is provided, it forms structure as shown in Figure 2, mainly form by water-cooled row 241, water tank 242 and water pump 243, water supply hose 18 is connected with water-cooled row 241, water-cooled row 241 is connected with water tank 242 by water pipe, water tank 242 is connected with water pump 243 by water pipe, water pump 243 is connected with scupper hose 19, it is (not shown among Fig. 2 on the water-cooled row 241 radiator fan 244 to be installed, specifically see Fig. 3), store the cooling agent (not shown) in the water tank 242.At this, water-cooled row 241 mainly plays the effect of heat radiation, on water-cooled row 241 radiator fan 244 is installed, and radiator fan 244 can effectively improve radiating rate; It is to provide cooling agent for unit, water route 24 and water-cooling groove 4 that water tank 242 stores cooling agents, and during 24 work of unit, water route, water pump 243 drives cooling agents and circulates in unit, water route 24 and water-cooling groove 4, and cooling agent adopts distilled water as used herein.
In this specific embodiment, circuit unit 26 as shown in Figure 3, it comprises general supply 261, be used to control the break-make of the corresponding supply socket that is electrically connected with main equipment and vacuum plant device power supply (DPS) control section 262, water-cool control part 263, be used to control magnetic valve 251 break-make air inlet control section 264 and be used for the remote manual control control section 265 of external control operation.General supply 261 mainly is made up of fuse PT, contactor K4, normal open switch S7 and normally closed switch S8, the first termination alternating current of fuse PT, second end of fuse PT is connected with contactor K4, contactor K4 connects alternating current, normal open switch S7 is connected with contactor K4 respectively with normally closed switch S8, contactor K4 is connected with the 6th resistance R 6 and the 6th indicator lamp E6, the 6th resistance R 6 and the 6th indicator lamp E6 serial connection, adopt self-locking mode commonly used on the market to connect at this contactor K4, play the effect of the whole cleaning device general supply of switch; Device power supply (DPS) control section 262 is main by the first supply socket C1 that is used for being connected with vacuum plant power line 31, corresponding first relay K 1 that plays this first supply socket of break-make C1 energising, be used for forming with the second source socket C2 of main equipment power line 32 connections and corresponding second relay K 2 that plays this second source socket of break-make C2 energising, the first supply socket C1 is connected with first relay K 1 with contactor K4 respectively, second source socket C2 is connected with second relay K 2 with contactor K4 respectively, and first relay K 1 also is connected with remote manual control control section 265 respectively with second relay K 2; Water-cool control part 263 mainly is made up of the 3rd relay K 3 that the first Switching Power Supply T1, the break-make first Switching Power Supply T1 for water pump 243 power supplies switch on, the 3rd relay K 3 is connected with radiator fan 244 with remote manual control control section 265, air inlet control section 264, the first Switching Power Supply T1 respectively, and the first Switching Power Supply T1 is connected with contactor K4; Air inlet control section 264 mainly is made up of the inductance coil that is used for place in circuit of two magnetic valve 251 correspondences in the gas circuit unit 25, the inductance coil L2 of the inductance coil L1 of one of them magnetic valve of correspondence as shown in Figure 3 and corresponding another magnetic valve, two inductance coil L1, L2 are connected with remote manual control control section 265 with the 3rd relay K 3 respectively; Remote manual control control section 265 is mainly by the second switch power supply T2 for 265 power supplies of remote manual control control section, remote control/MTS S6, receiver of remote-control sytem SK, five function button S1, S2, S3, S4, S5 and with corresponding five indicator lamp E1 in order to demonstration corresponding function duty, E2, E3, E4, E5 forms, wherein manually control is controlled by function button S1-S5, remote control control is by the closure of the relay on the coded telecommand device control receiver of remote-control sytem SK and opens and control, manually control and remote control control is switched by remote control/MTS S6, corresponds respectively to control vacuum plant 22 at these five function button S1-S5, main equipment 1, unit, water route 24, first via gas circuit, the second tunnel gas circuit.
In this specific embodiment, vacuum plant 22 directly adopts existing vavuum pump; The microwave control circuit directly adopts employed microwave control circuit in the existing daily micro-wave oven, by the regulation and control of microwave control circuit realization to microwave source 14, plays the generation of control plasma and the effect of regulation and control plasma density.
Embodiment two:
As Fig. 1 to Fig. 3 and shown in Figure 6, the structure of the structure of present embodiment and embodiment one is basic identical, difference only is that reative cell base 16 is a rotating disc type reative cell base in the present embodiment, as shown in Figure 6, reative cell base 16 is provided with the motor of the bottom of running through microwave office's cavity 131 and puts groove 51, this motor is put groove 51 and is connected with reative cell 17, motor is put in the groove 51 and is provided with motor 52, need when placing motor 52 vertically up the motor shaft 53 of motor 52, the bottom that motor is put groove 51 is provided with the lead hole 54 of the power line that is used to draw motor 52, the power line of motor 52 draws by this lead hole 54 to be received on the external motor power, the openend that motor is put groove 51 is provided with the metal baffle 55 that is used to isolate reative cell 17 and motor storing groove 51, the central authorities of metal baffle 55 are provided with and are used for the axis hole 56 that matches with the motor shaft 53 of motor 52, and the end that the motor shaft 53 of motor 52 passes axis hole 56 is connected with the rotatable rotating disk 57 that is used to place cleaning of objects.Because present embodiment adopts rotating disc type reative cell base, therefore need not to be provided with the unit, water route in control device, also need not to be provided with the water-cool control part in the circuit unit of control device.
In this specific embodiment, in lead hole 54, load encapsulant, can effectively guarantee the air-tightness of reative cell 17 like this.
In this specific embodiment, the diameter of the rotating disk of selecting 57 needs less than being arranged at the air inlet tube head 36 on the reative cell base 16 and the distance between the tube head 37 of giving vent to anger, can guarantee that like this air-flow flows above rotating disk 57, when using the disclosed cleaning device of present embodiment, motor 52 drives rotating disk 57 rotations, the cleaning of objects that is placed on the rotating disk 57 rotates with rotating disk 57, can make cleaning of objects obtain multi-faceted cleaning.
Operating process of the present invention and principle are: at first the each several part with cleaning device connects by connected mode shown in Figure 1; Before the work, open the gas cylinder valve that gas supply device 21 carries, during work, at first press the normal open switch S7 of general supply 261, this moment contactor K4 coil electricity, the switch closure in the contactor K4, the 6th indicator lamp (power supply indicator) E6 lights simultaneously, the general supply energising, second switch power supply T2 energising; Then remote control/MTS S6 is switched to manual (is example with the manual operation at this), press the function button S3 that is used to control unit, water route 24, indicator lamp E3 lights, radiator fan 244 energising entrys into service simultaneously, the power supply that the coil electricity of the 3rd relay K 3 makes the interior closing of contact of relay connect the first Switching Power Supply T1 makes also entry into service of water pump 243, and this moment, cooling water began to circulate; Then press the function button S1 of corresponding vacuum plant 22, indicator lamp E1 lights, first relay K, 1 closure makes first supply socket C1 energising, thereby vavuum pump is opened, begin to vacuumize in the reative cell 17, observe the vacuum meter 254 of gas circuit unit 25, when it arrives the pressure of appointment, press the function button S5 that is used to control the function button S4 of first via gas circuit and is used to control the second tunnel gas circuit, this moment, indicator lamp E4 and E5 lighted, two magnetic valves 251 are opened simultaneously, cleaning reaction gas enters in the two-way gas circuit of gas circuit unit 25, and adjustments of gas flow control valve 252 is also regulated and control the charge flow rate and the allotment ratio of cleaning reaction gas by observing gas flow on the flowmeter 253; Behind the reacting gas flow speed stability to be cleaned, regulate the watt level and the working time of the microwave control circuit of main equipment 1, press the function button S2 that is used to control main equipment 1 then, indicator lamp E2 lights, and this moment, main equipment 1 entered duty; In main equipment 1 course of work, the microwave that microwave source 14 produces is introduced in the reative cell 17 by large-area quartz cover and is set up electromagnetic field, when cleaning reaction gas is subjected to microwave irradiation and after being energized, electronics in the cleaning reaction gas obtains energy under the microwave field effect, make its ionization with gas molecule collision, to obtain more freedom electronics and ion (being plasma), the free electron and the icon bombardment cleaning sample that produce, the surface of cleaning sample 6 is cleaned or surface modification, the power that improves microwave can increase the density and the energy of plasma, can effectively strengthen cleaning performance; Reduce the pressure in the reative cell, can increase the free path of particle, can reduce the particle encounter number of times, make the particle that arrives the surface of cleaning sample have higher energy, can effectively strengthen the ability and the cleaning strength of the surface modification of cleaning sample; After cleaning process finishes, press function button S2, S1, S3, S4, S5 successively, taken out sample after cleaning after closing total power switch S8.

Claims (10)

1. plasma body cleaning device, comprise main equipment and ancillary equipment, described ancillary equipment is mainly by gas supply device, vacuum plant and control device are formed, it is characterized in that described control device comprises gas circuit unit and circuit unit, described main equipment mainly is made up of microwave system and reaction unit, described microwave system comprises microwave office, the microwave control circuit that is arranged at the microwave source in the described microwave office and is electrically connected with described microwave source, described reaction unit comprises the quartz cover that is arranged in the described microwave office, be arranged in the described microwave office and be arranged at the reative cell base of described quartz cover below and reative cell that the space that surrounded by described quartz cover and described reative cell base constitutes, described microwave control circuit is connected with described circuit unit by the main equipment power line, described reative cell is connected with described gas circuit unit by main air inlet pipe, described reative cell is connected with described vacuum plant by blast pipe, described gas supply device is connected with described gas circuit unit by branched inlet pipe, and described vacuum plant is connected with described circuit unit by the vacuum plant power line.
2. a kind of plasma body cleaning device according to claim 1, it is characterized in that described gas circuit unit comprises magnetic valve, gas flow regulating valve, flowmeter and vacuum meter, described branched inlet pipe is connected with described magnetic valve, described magnetic valve is connected with described gas flow regulating valve by tracheae, described gas flow regulating valve is connected with described flowmeter by tracheae, described flowmeter is connected with described main air inlet pipe by tracheae, and described main air inlet pipe is connected with described vacuum meter by tracheae.
3. a kind of plasma body cleaning device according to claim 2, it is characterized in that described circuit unit comprises general supply, be used to control the device power supply (DPS) control section of the break-make of corresponding supply socket that is electrically connected with described main equipment and the corresponding supply socket that is electrically connected with described vacuum plant, be used to control described magnetic valve break-make the air inlet control section and be used for the remote manual control control section of external control operation, described general supply respectively with described device power supply (DPS) control section, described air inlet control section and described remote manual control control section are electrically connected.
4. a kind of plasma body cleaning device according to claim 3 is characterized in that described gas supply device comprises that at least one is used to supply the gas cylinder of cleaning reaction gas, and described gas cylinder is connected with described magnetic valve by described branched inlet pipe.
5. a kind of plasma body cleaning device according to claim 4, it is characterized in that described gas supply device comprises two described gas cylinders, in two described gas cylinders different cleaning reaction gas is housed respectively, each described gas cylinder is connected to form the two-way gas circuit by a described magnetic valve, a described gas flow regulating valve and a described flowmeter and described main air inlet pipe respectively.
6. according to each described a kind of plasma body cleaning device in the claim 1 to 5, it is characterized in that described microwave office comprise microwave office's cavity and with the movable microwave chamber door that cooperates of described microwave office cavity, described microwave source is arranged at the sidewall or the top of described microwave office cavity, described microwave chamber door is provided with and is used to observe the watch window that cleans the sample process, and described watch window is equipped with the micro-wave screening net on the inside side.
7. a kind of plasma body cleaning device according to claim 6, it is characterized in that described reative cell base is closely set on the bottom surface of described microwave office cavity, the bottom of running through described reative cell base and described microwave office cavity is provided with the air inlet tube head that is connected with described reative cell respectively and the tube head of giving vent to anger, described air inlet tube head is connected with described main air inlet pipe, the described tube head of giving vent to anger is connected with described blast pipe, is provided with sealing rubber ring between described reative cell base and the described quartz cover.
8. a kind of plasma body cleaning device according to claim 7, it is characterized in that being provided with water-cooling groove in the described reative cell base, run through the bottom of described microwave office cavity and the bottom of described reative cell base and be provided with water inlet tube head and the draining tube head that is connected with described water-cooling groove respectively, described water inlet tube head is connected with water supply hose, and described draining tube head is connected with scupper hose; Described control device also comprises the unit, water route, unit, described water route mainly is made up of water-cooled row, water tank and water pump, described water supply hose is connected with described water-cooled row, described water-cooled row is connected with described water tank by water pipe, described water tank is connected with described water pump by water pipe, and described water pump is connected with described scupper hose; Described circuit unit also comprises the water-cool control part, and described water-cool control is partly controlled the operation of described water pump.
9. a kind of plasma body cleaning device according to claim 8 is characterized in that on the described water-cooled row radiator fan being installed, and described water-cool control is partly controlled the operation of described radiator fan; Be provided with first row's watershed partition and second row's watershed partition in the described water-cooling groove, each watershed partition and described second in described first row's watershed partition is arranged all parallel and uniformly-spaced arrangement of each watershed partition in the watershed partition, first end of each watershed partition in described first row's watershed partition is connected with an inboard of described water-cooling groove, first end of each watershed partition in described second row's watershed partition is connected with inboard another relative inboard that described water-cooling groove is connected with described first row's watershed partition, the interlaced arrangement of each watershed partition in each watershed partition in described first row's watershed partition and the described second row's watershed partition, each watershed partition in each watershed partition in described first row's watershed partition and the described second row's watershed partition is divided into a plurality of water-cooleds zone with described water-cooling groove, and described water inlet tube head and described draining tube head lay respectively in two described water-cooled zones that are separated by farthest.
10. a kind of plasma body cleaning device according to claim 7, it is characterized in that described reative cell base is provided with the motor storing groove of the bottom of running through described microwave office cavity, described motor is put in the groove and is provided with motor, the bottom that described motor is put groove is provided with the lead hole of the power line that is used to draw described motor, the openend that described motor is put groove is provided with the metal baffle that is used to isolate described reative cell and described motor storing groove, described metal baffle is provided with and is used for the axis hole that matches with the motor shaft of described motor, and the end that the motor shaft of described motor passes described axis hole is connected with rotatable rotating disk.
CN2010101651340A 2010-05-04 2010-05-04 Plasma body cleaning device Expired - Fee Related CN101837357B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010101651340A CN101837357B (en) 2010-05-04 2010-05-04 Plasma body cleaning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010101651340A CN101837357B (en) 2010-05-04 2010-05-04 Plasma body cleaning device

Publications (2)

Publication Number Publication Date
CN101837357A true CN101837357A (en) 2010-09-22
CN101837357B CN101837357B (en) 2011-10-05

Family

ID=42741166

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101651340A Expired - Fee Related CN101837357B (en) 2010-05-04 2010-05-04 Plasma body cleaning device

Country Status (1)

Country Link
CN (1) CN101837357B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2535228C1 (en) * 2013-07-23 2014-12-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" Method of determining duration of plasma-chemical etching of surface of semiconductor plates for submicron technology
RU2548906C1 (en) * 2013-11-22 2015-04-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кубанский государственный технологический университет (ФГБОУ ВПО "КубГТУ") Cleaning of inner surfaces of dielectric articles
CN108080356A (en) * 2016-11-22 2018-05-29 东莞新科技术研究开发有限公司 The polishing treatment method of air spindle
CN110076141A (en) * 2019-04-30 2019-08-02 河南先途智能科技有限公司 A kind of plasma washing equipment
CN110662363A (en) * 2018-06-28 2020-01-07 雷立强光电科技股份有限公司 Cleaning method
CN111059466A (en) * 2019-11-29 2020-04-24 青岛歌尔智能传感器有限公司 Nitrogen gas supply device, plasma cleaning system and nitrogen gas supply method
CN111441034A (en) * 2020-03-31 2020-07-24 上海征世科技有限公司 Substrate table and method for in-situ cleaning with plasma
CN113324357A (en) * 2021-05-28 2021-08-31 合肥科天水性科技有限责任公司 Metal fixture cooling device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1038036A (en) * 1988-05-10 1989-12-20 公共供应公司 Method with the after-glow plasma clean surface
JPH10149989A (en) * 1996-09-16 1998-06-02 Applied Komatsu Technol Inc Technique for cleaning deposition chamber using high-output remote excitation source
US5885361A (en) * 1994-07-25 1999-03-23 Fujitsu Limited Cleaning of hydrogen plasma down-stream apparatus
CN1449872A (en) * 2003-04-10 2003-10-22 上海复旦辰光科技有限公司 Method and device for cleaning material surface by microwave
CN1570807A (en) * 2003-07-17 2005-01-26 张能超 Water cooling type heat radiating device
US20050191830A1 (en) * 2000-08-11 2005-09-01 Collins Kenneth S. Plasma immersion ion implantation process
CN201365061Y (en) * 2009-01-22 2009-12-16 乐培界 Water-cooled microwave generating device
CN201669245U (en) * 2010-05-04 2010-12-15 宁波大学 Plasma washing device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1038036A (en) * 1988-05-10 1989-12-20 公共供应公司 Method with the after-glow plasma clean surface
US5885361A (en) * 1994-07-25 1999-03-23 Fujitsu Limited Cleaning of hydrogen plasma down-stream apparatus
JPH10149989A (en) * 1996-09-16 1998-06-02 Applied Komatsu Technol Inc Technique for cleaning deposition chamber using high-output remote excitation source
US20050191830A1 (en) * 2000-08-11 2005-09-01 Collins Kenneth S. Plasma immersion ion implantation process
CN1449872A (en) * 2003-04-10 2003-10-22 上海复旦辰光科技有限公司 Method and device for cleaning material surface by microwave
CN1570807A (en) * 2003-07-17 2005-01-26 张能超 Water cooling type heat radiating device
CN201365061Y (en) * 2009-01-22 2009-12-16 乐培界 Water-cooled microwave generating device
CN201669245U (en) * 2010-05-04 2010-12-15 宁波大学 Plasma washing device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2535228C1 (en) * 2013-07-23 2014-12-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" Method of determining duration of plasma-chemical etching of surface of semiconductor plates for submicron technology
RU2548906C1 (en) * 2013-11-22 2015-04-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Кубанский государственный технологический университет (ФГБОУ ВПО "КубГТУ") Cleaning of inner surfaces of dielectric articles
CN108080356A (en) * 2016-11-22 2018-05-29 东莞新科技术研究开发有限公司 The polishing treatment method of air spindle
CN110662363A (en) * 2018-06-28 2020-01-07 雷立强光电科技股份有限公司 Cleaning method
CN110076141A (en) * 2019-04-30 2019-08-02 河南先途智能科技有限公司 A kind of plasma washing equipment
CN111059466A (en) * 2019-11-29 2020-04-24 青岛歌尔智能传感器有限公司 Nitrogen gas supply device, plasma cleaning system and nitrogen gas supply method
CN111441034A (en) * 2020-03-31 2020-07-24 上海征世科技有限公司 Substrate table and method for in-situ cleaning with plasma
CN111441034B (en) * 2020-03-31 2024-01-30 上海征世科技股份有限公司 Substrate table and method for in-situ cleaning with plasma
CN113324357A (en) * 2021-05-28 2021-08-31 合肥科天水性科技有限责任公司 Metal fixture cooling device

Also Published As

Publication number Publication date
CN101837357B (en) 2011-10-05

Similar Documents

Publication Publication Date Title
CN101837357B (en) Plasma body cleaning device
CN201669245U (en) Plasma washing device
TWI417930B (en) Plasma generation apparatus
CN101479407B (en) Combustion gas generator and on-board combustion gas generator utilizing electrolysis
CN102137951B (en) Method of manufacturing optical filter
CN207391539U (en) A kind of plated film protective cover and its coating apparatus with refrigerating function
CN106512726B (en) A kind of Electromagnetic isotope separator
US20060201172A1 (en) Temperature control system and substrate processing apparatus
CN104205305A (en) Substrate processing apparatus and heater cleaning method
CN105431294A (en) Low-particle gas enclosure systems and methods
TW202213509A (en) Plasma chamber with tandem processing regions
CN103915306A (en) Microelectronic fabrication processing device and reaction chamber therefor
CN101600515A (en) Industrial cleaning system
CN101740340A (en) Reaction chamber and semiconductor processing device
CN105664662B (en) The online decontaminating column and glove box for replacing sorbing material
CN1156603C (en) Large area plasma source
US20210408958A1 (en) Solar and electrolytic system comprising a moisture harvesting solar system and an electrolysis cell
US8758579B2 (en) Chamber for physical vapour deposition and door for a physical vapour deposition chamber
JP2022055323A (en) Discharge fluid processing system and method for semiconductor manufacturing facility
CN102296284B (en) Coating device
CN106169407B (en) System and method for controlling plasma in semiconductor fabrication
CN218321597U (en) Ultrahigh vacuum magnetron sputtering target and magnetron sputtering device
KR20140098549A (en) Manufacturing apparatus of nano-sized powder
CN201383492Y (en) Microwave excitation small-sized plasma etching device
CN114226360B (en) Pretreatment device for electron microscope sample and sample rod

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20200817

Address after: 4-21-1, Chuangye building, 66 Yuanshi Road, Ningbo, Zhejiang Province, 315000

Patentee after: Zhejiang Yaoyao Technology Co., Ltd

Address before: 315211 Zhejiang Province, Ningbo Jiangbei District Fenghua Road No. 818

Patentee before: Ningbo University

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111005

Termination date: 20210504

CF01 Termination of patent right due to non-payment of annual fee